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FF900R12IE4BOSA1
IGBT Module, Dual, 900 A, 1.75 V, 5.1 kW, 150 °C, Module
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: INFINEON
- Product type: IGBT Modules
- Transistor Polarity:N Channel; DC Collector Current:900A; Collector Emitter Saturation Voltage Vce(on):1.75V; Power Dissipation Pd:5.1kW; Collector Emitter Voltage V(br)ceo:1.2kV; Transis
- SVHC: No SVHC (25-Jun-2025)
- Product Range: PrimePACK 2
- IGBT Technology: IGBT 4 [Trench/Field Stop]
- IGBT Termination: Stud
- Power Dissipation: 5.1kW
- IGBT Configuration: Dual
- Transistor Mounting: Panel
- Transistor Polarity: N Channel
- DC Collector Current: 900A
- Power Dissipation Pd: 5.1kW
- Transistor Case Style: Module
- Operating Temperature Max: 150°C
- Junction Temperature Tj Max: 150°C
- Continuous Collector Current: 900A
- Collector Emitter Voltage Max: 1.2kV
- Collector Emitter Voltage V(br)ceo: 1.2kV
- Collector Emitter Saturation Voltage: 1.75V
- Collector Emitter Saturation Voltage Vce(on): 1.75V
| Delivery and price | |
|---|---|
| Units per pack | 1 |
| Price | 321.69 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
IGBT-模块 IGBT-modules
## FF900R12IE4
VCES = 1200V IC nom = 900A / ICRM = 1800A
## **典型应用**
- 电机传动
- • 谐振逆变器应用
- • 牵引变流器 • UPS系统 • 风力发电机
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-
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-
## **电气特性**
- •
- 高直流电压稳定性
- • 高短路能力，自限制短路电流
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• High Short Circuit Capability, Self Limiting Short
- 低开关损耗
- • 无与伦比的坚固性
- VCEsat
-
-
- VCEsat
## **机械特性**
- •
- •
- 高爬电距离和电气间隙
- • 高功率循环和温度循环能力
- • 高功率密度
- • 低热阻衬底
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> IGBT-模块IGBT-modules FF900R12IE4
## 技术信息�/�Technical�Information
**==> picture [86 x 38] intentionally omitted <==**
## **初步数据 Preliminary�Data**
## **IGBT,�逆变器�/�IGBT,Inverter 最大额定值�/�Maximum�Rated�Values**
|技术信息/TechnicalInformation<br>FF900R12IE4<br>IGBT-模块<br>IGBT-modules||
|---|---|
|preparedby:AC<br>approvedby:MS<br>dateofpublication:2013-11-05<br>revision:2.4<br>**初步数据**<br>**PreliminaryData**<br>**IGBT,逆变器/IGBT,Inverter**<br>**最大额定值/MaximumRatedValues**<br>集电极－发射极电压<br>Collector-emittervoltage<br>Tvj= 25°C<br>VCES<br>1200<br>V<br>连续集电极直流电流<br>ContinuousDCcollectorcurrent<br>TC= 100°C, Tvj max= 175°C<br>IC nom<br>900<br>A<br>集电极重复峰值电流<br>Repetitivepeakcollectorcurrent<br>tP= 1 ms<br>ICRM<br>1800<br>A<br>总功率损耗<br>Totalpowerdissipation<br>TC= 25°C, Tvj max= 175°C<br>Ptot<br>5,10<br>kW<br>栅极－发射极峰值电压<br>Gate-emitterpeakvoltage<br>VGES<br>+/-20<br>V<br>**特征值/CharacteristicValues**<br>min.<br>typ.<br>max.<br>集电极－发射极饱和电压<br>Collector-emittersaturationvoltage<br>IC= 900 A, VGE= 15 V<br>IC= 900 A, VGE= 15 V<br>IC= 900 A, VGE= 15 V<br>VCE sat<br>1,75<br>2,05<br>2,10<br>2,05<br>V<br>V<br>V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>栅极阈值电压<br>Gatethresholdvoltage<br>IC= 33,0 mA, VCE= VGE, Tvj= 25°C<br>VGEth<br>5,2<br>5,8<br>6,4<br>V<br>栅极电荷<br>Gatecharge<br>VGE= -15 V ... +15 V<br>QG<br>6,40<br>µC<br>内部栅极电阻<br>Internalgateresistor<br>Tvj= 25°C<br>RGint<br>1,2<br>Ω<br>输入电容<br>Inputcapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cies<br>54,0<br>nF<br>反向传输电容<br>Reversetransfercapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cres<br>3,00<br>nF<br>集电极-发射极截止电流<br>Collector-emittercut-offcurrent<br>VCE= 1200 V, VGE= 0 V, Tvj= 25°C<br>ICES<br>5,0<br>mA<br>栅极-发射极漏电流<br>Gate-emitterleakagecurrent<br>VCE= 0 V, VGE= 20 V, Tvj= 25°C<br>IGES<br>400<br>nA<br>开通延迟时间(电感负载)<br>Turn-ondelaytime,inductiveload<br>IC= 900 A, VCE= 600 V<br>VGE= ±15 V<br>RGon= 1,5Ω<br>td on<br>0,20<br>0,22<br>0,22<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>上升时间(电感负载)<br>Risetime,inductiveload<br>IC= 900 A, VCE= 600 V<br>VGE= ±15 V<br>RGon= 1,5Ω<br>tr<br>0,11<br>0,12<br>0,13<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>关断延迟时间(电感负载)<br>Turn-offdelaytime,inductiveload<br>IC= 900 A, VCE= 600 V<br>VGE= ±15 V<br>RGoff= 1,5Ω<br>td off<br>0,66<br>0,75<br>0,79<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>下降时间(电感负载)<br>Falltime,inductiveload<br>IC= 900 A, VCE= 600 V<br>VGE= ±15 V<br>RGoff= 1,5Ω<br>tf<br>0,09<br>0,14<br>0,15<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>开通损耗能量(每脉冲)<br>Turn-onenergylossperpulse<br>IC= 900 A, VCE= 600 V, LS= 45 nH<br>VGE= ±15 V, di/dt = 5700 A/µs (Tvj= 150°C)<br>RGon= 1,3Ω<br>Eon<br>55,0<br>70,0<br>80,0<br>mJ<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>关断损耗能量(每脉冲）<br>Turn-offenergylossperpulse<br>IC= 900 A, VCE= 600 V, LS= 45 nH<br>VGE= ±15 V, du/dt = 3200 V/µs (Tvj= 150°C)<br>RGoff= 1,5Ω<br>Eoff<br>85,0<br>120<br>130<br>mJ<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>短路数据<br>SCdata<br>VGE ≤15 V, VCC= 900 V<br>VCEmax= VCES-LsCE·di/dt<br>ISC<br>3600<br>A<br>Tvj= 150°C<br>tP ≤10 µs,<br>结－外壳热阻<br>Thermalresistance,junctiontocase<br>每个IGBT/perIGBT<br>RthJC<br>29,5 K/kW<br>外壳－散热器热阻<br>Thermalresistance,casetoheatsink<br>每个IGBT/perIGBT<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)<br>RthCH<br>14,0<br>K/kW<br>在开关状态下温度<br>Temperatureunderswitchingconditions<br>Tvj op<br>-40<br>150<br>°C||
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技术信息�/�Technical�Information IGBT-模块IGBT-modules FF900R12IE4
**==> picture [86 x 38] intentionally omitted <==**
**初步数据 Preliminary�Data**
## **二极管,逆变器�/�Diode,�Inverter 最大额定值�/�Maximum�Rated�Values**
|反向重复峰值电压<br>Repetitivepeakreversevoltage|Tvj= 25°C|VRRM|1200|1200||V|
|---|---|---|---|---|---|---|
|连续正向直流电流<br>ContinuousDCforwardcurrent||IF|900|||A|
|正向重复峰值电流<br>Repetitivepeakforwardcurrent|tP= 1 ms|IFRM|1800|||A|
|I2t-值<br>I²t-value|VR= 0 V, tP= 10 ms, Tvj= 125°C<br>VR= 0 V, tP= 10 ms, Tvj= 150°C|I²t|91,0<br>88,0|||kA²s<br>kA²s|
|**特征值/CharacteristicValues**|||min.|typ.|max.||
|正向电压<br>Forwardvoltage|IF= 900 A, VGE= 0 V<br>IF= 900 A, VGE= 0 V<br>IF= 900 A, VGE= 0 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|VF||1,90<br>1,85<br>1,80|2,30|V<br>V<br>V|
|反向恢复峰值电流<br>Peakreverserecoverycurrent|IF= 900 A, - diF/dt = 5700 A/µs (Tvj=150°C)<br>VR= 600 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|IRM||500<br>660<br>710||A<br>A<br>A|
|恢复电荷<br>Recoveredcharge|IF= 900 A, - diF/dt = 5700 A/µs (Tvj=150°C)<br>VR= 600 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Qr||90,0<br>150<br>195||µC<br>µC<br>µC|
|反向恢复损耗（每脉冲）<br>Reverserecoveryenergy|IF= 900 A, - diF/dt = 5700 A/µs (Tvj=150°C)<br>VR= 600 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Erec||40,0<br>80,0<br>90,0||mJ<br>mJ<br>mJ|
|结－外壳热阻<br>Thermalresistance,junctiontocase|每个二极管/perdiode|RthJC|||53,5|K/kW|
|外壳－散热器热阻<br>Thermalresistance,casetoheatsink|每个二极管/perdiode<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)|RthCH||25,5||K/kW|
|在开关状态下温度<br>Temperatureunderswitchingconditions||Tvj op|-40||150|°C|
## **负温度系数热敏电阻�/�NTC-Thermistor 特征值�/�Characteristic�Values**
|**负温度系数热敏电阻/NTC-Thermistor**<br>|**负温度系数热敏电阻/NTC-Thermistor**<br>||||||
|---|---|---|---|---|---|---|
|**特征值/CharacteristicValues**|||min.<br>typ.||max.||
|额定电阻值<br>Ratedresistance|TC= 25°C|R25||5,00||kΩ|
|R100偏差<br>DeviationofR100|TC= 100°C, R100= 493Ω|∆R/R|-5||5|%|
|耗散功率<br>Powerdissipation|TC= 25°C|P25|||20,0|mW|
|B-值<br>B-value|R2= R25exp [B25/50(1/T2- 1/(298,15 K))]|B25/50||3375||K|
|B-值<br>B-value|R2= R25exp [B25/80(1/T2- 1/(298,15 K))]|B25/80||3411||K|
|B-值<br>B-value|R2= R25exp [B25/100(1/T2- 1/(298,15 K))]|B25/100||3433||K|
|根据应用手册标定<br>Specificationaccordingtothevalidapplicationnote.|||||||
prepared�by:�AC date�of�publication:�2013-11-05 approved�by:�MS revision:�2.4
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IGBT-模块 IGBT-modules
## FF900R12IE4
## **初步数据**
|#R_<br>| Module||||||
|---|---|---|---|---|---|
|绝缘测试电压<br>模块基板材料<br>内部绝缘<br>~~Isolation test voltage~~<br>~~Material of module baseplate ~~<br>Internal isolation|RMS, f = 50 Hz, t = 1 min.<br>~~ee ~~<br> ~~ee ~~<br>BAM (class 1, IEC 61140)<br>basic insulation (class 1, IEC 61140)|VISOL<br> ~~ee~~<br> ~~ee~~||4,0<br>Cu<br>Al2O3|kV|
|爬电距离<br>Creepage distance|im-BEA /terminaltoheatsink<br>imF-Ym /terminal to terminal|||33,0<br>33,0|mm|
|电气间隙<br>Clearance<br>相对电痕指数<br>~~Comperative tracking index~~|im-BEA /terminal toheatsink<br>im F-Ym / terminal to terminal<br>~~ee~~|CTI<br>~~ee~~|min.|19,0<br>19,0<br>> 400<br>typ.<br>max.<br>~~ee~~|mm|
|外壳－散热器热阻<br>Thermal resistance, case to heatsink|Paste<br>grease<br>#3-SER /permodule<br>= 1 W/(m‘k)/<br>= 1 W/(m-k)|RthCH||4,50|K/kW|
|杂散电感,模块||LsCE||18|nH|
|模块引线电阻,端子-芯片<br>储存温度<br>模块安装的安装扭距<br>terminals ~~- chip~~<br>~~Storage temperature~~<br>Mounting torque for modul mounting|TC<br>=<br>°<br>HN<br>ij<br>~~25°C, STFA/ per switch~~<br>~~ee ~~<br>$ReeMSARSEAR AVAY Oy EA ET<br>Screw M5<br>- Mounting according to valid application note|RCC'+EE'<br>0,30<br>Tstg<br>-40<br>150<br>M<br>3,00<br>-<br>6,00<br>~~tt ff~~<br> ~~ee ee~~|||mΩ<br>°C<br>Nm|
|端子联接扭距<br>Terminal connection torque|BeeM4AHEAD AVAY OV EAETR<br>Screw M4<br>- Mounting<br>according to valid application note<br>teeM8IBAA SEABST ee<br>Screw M8<br>- Mounting according to valid application note|M|1,8<br>8,0|-<br>-<br>2,1<br>10|Nm<br>Nm|
|重量<br>Weight||G||825|g|
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IGBT-模块<br>IGBT-modules<br>**----- End of picture text -----**<br>
## FF900R12IE4
## **初步数据**
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I oy C characteristic CE) IGBT,Inverter (typical) I ony C characteristic CE) IGBT,Inverter (typical)<br>VGE =15V Tvj = 150°C<br>1800 1800<br>[p Tvj = 25°C e I en [ VGE = 19V pees<br>1600 Tvj = 125°C 1600 VGE = 17V<br>(i Tvj = 150°C VGE = 15V nl<br>| heaeeee es ro | VGE = 13V reP| Ve ey ee|<br>1400 ee ee ee ee eee 1400 | VVGEGE = 11V = 9V PL dr el 7<br>ee ee eee [ Ec ce 6 2<br>1200 aeee ee ee ee 1200 es PL | AYeeea |<br>1000 eePTeePeeee 1000 P eee ee|Pe<br>800 eeeeeeee eee 800 P|P| eeA<br>600 a ee ee 600 ee<br>400 eeee ee ee ee 400 eeee eee<br>a ee e/a eee<br>200 a ee 2a eeeee 200 P|a LEAZA ee eee<br>0 a ee ee eee 0 DA<br>0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0<br>VCE [V] VCE [V]<br>ME IGBT, HAS (BB) FFRIAE IGBT, HBA ( BB)<br>transfer characteristic IGBT,Inverter (typical) switching losses IGBT, Inverter (typical)<br>IC GE) Eon C off C)<br>VCE ay, VGE Oo R Gon a, Ω ,R Goff =1.5 Ω ,V CE =600V<br>1800<br>Tvj = 25°C Eon, Tvj = 125°C<br>I Tvj = 125°C “+14 250 Mm Eon ~—Drh , Tvj = 150°C rALLELLLELLIL<br>1600<br>Tvj = 150°C Foo Eoff, Tvj = 125°C<br>[i YA Eoff, Tvj = 150°C EEE<br>1400 a A 200 LEE Ms<br>ee<br>1200<br>i ee oe GARE<br>1000 150<br>ee PELE EEE aa ee<br>800 ee eeae ee e e RRNDLAs GNUE?oS Z| UE<br>eee<br>100<br>600<br>a ee ee ee ee Te<br>ee PELL LALee<br>400<br>eea [ee] ne Aanee 50 ELLEUE Le ELE<br>200<br>e/a | Mert LLL EEL ELL LL<br>PY a<br>0 Ss ee 0 TELELL EL EEEELE<br>5 6 7 8 9 10 11 12 0 200 400 600 800 1000 1200 1400 1600 1800<br>VGE [V] IC [A]<br> [A] [A]<br>IC IC<br> [A]<br>IC E [mJ]<br>**----- End of picture text -----**<br>
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IGBT-模块 IGBT-modules
## FF900R12IE4
## **初步数据**
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Eon ={(R),E G off =f(R G) ZthJC =f (t)<br>VGE =415V,1 C =900A,V CE =600V<br>450 100<br>Eon, Tvj = 125°C ZthJC : IGBT<br>HH— EE HH} tH<br>400 EEonoff, T, Tvjvj = 150°C = 125°C es<br>Eoff, Tvj = 150°C<br>350 I W y | Le ee A et<br>300 TT L LLLf 10 crn ae ct<br>a Ae 00<br>a<br>250200 PPTL LL LAZAL(VA EL Ee|a nn<br>150 BEREEPZARREBAREE 1 CT<br>Va —|— = PE HH EH<br>100<br>Searares Gall ( nnd |Caelnei<br>i: 1 2 3 4<br>50 ri[K/kW]: 1,2 6 20 2,3<br>τ i[s]: 0,0008 0,013 0,05 0,6<br>0 0,1<br>0,0 1,0 2,0 3,0 4,0 5,0 6,0 7,0 8,0 0,001 0,01 0,1 1 10<br>RG [ Ω ] t [s]<br>RieZS LEK IGBT, ees ( RBSOA ) Fa mESst REGS ( BB)<br>reverse bias safe operating area IGBT,Inverter (RBSOA) forward characteristic of Diode, Inverter (typical)<br>IC =f(V CE) IF =f(V F)<br>VGE SVR Goff =1.5 Ω ,T vj =150°C<br>2000 [pemeeeeeees IC, Modul Rs RE 1800 7 Tvj = 25°C<br>1800 IC, Chip 1600 Tvj = 125°C<br>f= F Tvj = 150°C E<br>[——T | | | a<br>1600<br>————SS ce 1400 ee<br>1400<br>pf} {|_| 14} 1200 es<br>ee a oo<br>1200<br>ee ee ee ee ee 1000 re ee ee ee eeoT<br>1000<br>a 800 pf<br>800 a oo EE<br>a a a a e/a<br>600<br>600<br>Pf fF PP EY eee/a<br>a)<br>400<br>400<br>pt} {| | _1 4} _ a 7 A<br>200 poa ee ee ee 200 A:<br>a a<br>0 0<br>0 200 400 600 800 1000 1200 1400 0,0 0,5 1,0 1,5 2,0 2,5 3,0<br>VCE [V] VF [V]<br> [K/kW]<br>E [mJ]<br>thJC<br>Z<br> [A] [A]<br>IC IF<br>**----- End of picture text -----**<br>
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## IGBT-模块 IGBT-modules
## FF900R12IE4
## **初步数据**
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Erec = f (I F) Erec =f(R G)<br>RGon =13 Ω ,V CE =600V IF =900A,V CE =600V<br>120<br>120 E- Erec, T F vj = 125°C oes OO Erec, Tvj = 125°C OO<br>E Erec, Tvj = 150°C E 110 fe Erec, Tvj = 150°C<br>110 Pt tT | | tt 100 YT | | [{|<br>100 Pt| tT | tT tp PEPEtt eet Ff e o TT<br>Pot t T 90 x<br>90 Pt ft ft | | | tT ey ee x<br>i SENT CREeeeeeeee<br>80<br>80<br>Pt | | | | | tet ep yt tt i x<br>Coe BERNGSEREEEEEEEE<br>70<br>70 Pt tt | tee pe NSD<br>REPRE<br>60<br>60 P| | | iy TT tT EEA RORbs PSE<br>pore REET<br>50<br>50<br>Pt tT eevee | tT tt tT tT | TT ~S<br>Oe 74 40 Py] t] dt) | Pe REE<br>40 Pi yA tT | Pt tT tT tT =<br>PEAEEEEEEEEEErER Ce<br>30 PLA | | | | tT tT TT 30<br>BARS Ce<br>20 Py | {| | | | tT tT TT 20<br>PEREEEEEEEEEEEEA TTT<br>10 Pt f {| | | | ft | tt tt 10<br>0 PtPe tTtettT tTeete tteeetT tT Tt TT 0 Py TL ETL TLE LEE<br>0 200 400 600 800 1000 1200 1400 1600 0,0 1,0 2,0 3,0 4,0 5,0 6,0 7,0 8,0<br>IF [A] RG [ Ω ]<br>E [mJ] E [mJ]<br>**----- End of picture text -----**<br>
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ZthJC =f (t) R=f(T)<br>100 100000<br>(— ' ZthJC : Diode e a o i [= Rtyp a<br>( h e ee jy<br>PT TT ee TE T a e e<br>a<br>2 ee ee<br>En SUNUIN(GNROGU/GN BAI e e<br>10 TM 10000<br>Pt ee<br>Ze SS<br>7 [| Tei tT Tit TT ES NN se ee<br>PTPT TT TTTEETTTT TT potaNENe a eeee<br>1 1000<br>Pt ee<br>a a a<br>PT TTT ETT NS<br>PT [TT] TTT TTT a eeee<br>i: 1 2 3 4<br>ri[K/kW]: 4,5 12,7 35,4 0,9<br>a τ i[s]: 0,0008 0,013 0,05 0,6 | ee ee<br>0,1 100<br>0,001 0,01 0,1 1 10 0 20 40 60 80 100 120 140 160<br>t [s] TC [°C]<br>] Ω<br> [K/kW] R[<br>thJC<br>Z<br>**----- End of picture text -----**<br>
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技术信息�/�Technical�Information<br>IGBT-模块IGBT-modules FF900R12IE4<br>初步数据<br>Preliminary�Data<br>接线图�/�circuit_diagram_headline<br>封装尺寸�/�package�outlines<br>**----- End of picture text -----**<br>
prepared�by:�AC date�of�publication:�2013-11-05 approved�by:�MS revision:�2.4
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IGBT-模块 IGBT-modules
## FF900R12IE4
## **初步数据**
## **使用条件和条款**
## 使用条件和条款
产品规格书中的数据是专门为技术人员提供的，您和您的技术部门应该针对您的应用来评估产品及产品的所有参数是否适合
产品规格书中所描述的产品特性是被保证的，任何这种保证严格依照供货协议中所涉及的条件和条款。除此之外，产品和产品的特性没有任何的保证 请注意安装及应用指南中的信息。
如果您有超出规格书所提供的产品信息的要求或者对我们的产品针对的特殊应用有疑虑的话，请联系我们负责你的销售部门（详情查询
我们负责你的销售部门 如果您想将我们的产品用于航天，健康，危及生命或者生命维持等应用，请申明。 请注意，对这类应用我们强烈建议 -执行联合的风险和质量评估 -得到质量协议的结论
保留产品规格书的修改权
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Updated at April 28, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
About Novapart
Novapart is a B2B electronic component broker specialising in stock shortages and cost reduction. We source hard-to-find parts and identify compliant alternatives across a catalogue of 410,000+ components from 500+ manufacturers.
Learn more →Stock Shortage Specialist
When a component is unavailable, discontinued or has an unacceptable lead time, we tap into our network of vetted European and Asian distributors to source what you need — without compromising on quality or traceability.
Request a quote →Compliant Alternatives
We identify pin-to-pin, electrically equivalent substitutes that meet the same certifications (RoHS, AEC-Q100, REACH) as your original specification — validated against datasheets, not just part numbers. Often at a lower cost.
BOM Analysis service →