Image not available
Illustrative purposes only
FF900R12IE4
IGBT Module, Dual, 900 A, 1.75 V, 5.1 kW, 150 °C, Module
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: INFINEON
- Product type: IGBT Modules
- Transistor Polarity:N Channel; DC Collector Current:900A; Collector Emitter Saturation Voltage Vce(on):1.75V; Power Dissipation Pd:5.1kW; Collector Emitter Voltage V(br)ceo:1.2kV; Tra
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 10Pins
- Product Range: -
- IGBT Technology: -
- IGBT Termination: Tab
- Power Dissipation: 5.1kW
- IGBT Configuration: Dual
- Transistor Mounting: Panel
- Transistor Polarity: N Channel
- DC Collector Current: 900A
- Power Dissipation Pd: 5.1kW
- Transistor Case Style: Module
- Operating Temperature Max: 150°C
- Junction Temperature Tj Max: 150°C
- Continuous Collector Current: 900A
- Collector Emitter Voltage Max: 1.2kV
- Collector Emitter Voltage V(br)ceo: 1.2kV
- Collector Emitter Saturation Voltage: 1.75V
- Collector Emitter Saturation Voltage Vce(on): 1.75V
| Delivery and price | |
|---|---|
| Units per pack | 5 |
| Price | 357.0 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
IGBT-Module IGBT-modules
## FF900R12IE4
VCES = 1200V IC nom = 900A / ICRM = 1800A
- Motorantriebe
-
- Traktionsumrichter
- • USV-Systeme
- Windgeneratoren
-
-
-
-
-
-
-
- Hohe Kurzschlussrobustheit, selbstlimitierender Kurzschlussstrom
-
-
- VCEsat
-
-
• High Short Circuit Capability, Self Limiting Short
-
-
- VCEsat
-
-
-
-
-
-
-
-
-
-
- •
1
> IGBT-ModuleIGBT-modules FF900R12IE4
## Technische�Information�/�Technical�Information
**==> picture [86 x 38] intentionally omitted <==**
## **Vorläufige�Daten Preliminary�Data**
## **IGBT,Wechselrichter�/�IGBT,Inverter Höchstzulässige�Werte�/�Maximum�Rated�Values**
|TechnischeInformation/TechnicalInformation<br>FF900R12IE4<br>IGBT-Module<br>IGBT-modules||
|---|---|
|preparedby:AC<br>approvedby:MS<br>dateofpublication:2013-11-05<br>revision:2.4<br>**VorläufigeDaten**<br>**PreliminaryData**<br>**IGBT,Wechselrichter/IGBT,Inverter**<br>**HöchstzulässigeWerte/MaximumRatedValues**<br>Kollektor-Emitter-Sperrspannung<br>Collector-emittervoltage<br>Tvj= 25°C<br>VCES<br>1200<br>V<br>Kollektor-Dauergleichstrom<br>ContinuousDCcollectorcurrent<br>TC= 100°C, Tvj max= 175°C<br>IC nom<br>900<br>A<br>PeriodischerKollektor-Spitzenstrom<br>Repetitivepeakcollectorcurrent<br>tP= 1 ms<br>ICRM<br>1800<br>A<br>Gesamt-Verlustleistung<br>Totalpowerdissipation<br>TC= 25°C, Tvj max= 175°C<br>Ptot<br>5,10<br>kW<br>Gate-Emitter-Spitzenspannung<br>Gate-emitterpeakvoltage<br>VGES<br>+/-20<br>V<br>**CharakteristischeWerte/CharacteristicValues**<br>min.<br>typ.<br>max.<br>Kollektor-Emitter-Sättigungsspannung<br>Collector-emittersaturationvoltage<br>IC= 900 A, VGE= 15 V<br>IC= 900 A, VGE= 15 V<br>IC= 900 A, VGE= 15 V<br>VCE sat<br>1,75<br>2,05<br>2,10<br>2,05<br>V<br>V<br>V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Gate-Schwellenspannung<br>Gatethresholdvoltage<br>IC= 33,0 mA, VCE= VGE, Tvj= 25°C<br>VGEth<br>5,2<br>5,8<br>6,4<br>V<br>Gateladung<br>Gatecharge<br>VGE= -15 V ... +15 V<br>QG<br>6,40<br>µC<br>InternerGatewiderstand<br>Internalgateresistor<br>Tvj= 25°C<br>RGint<br>1,2<br>Ω<br>Eingangskapazität<br>Inputcapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cies<br>54,0<br>nF<br>Rückwirkungskapazität<br>Reversetransfercapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cres<br>3,00<br>nF<br>Kollektor-Emitter-Reststrom<br>Collector-emittercut-offcurrent<br>VCE= 1200 V, VGE= 0 V, Tvj= 25°C<br>ICES<br>5,0<br>mA<br>Gate-Emitter-Reststrom<br>Gate-emitterleakagecurrent<br>VCE= 0 V, VGE= 20 V, Tvj= 25°C<br>IGES<br>400<br>nA<br>Einschaltverzögerungszeit,induktiveLast<br>Turn-ondelaytime,inductiveload<br>IC= 900 A, VCE= 600 V<br>VGE= ±15 V<br>RGon= 1,5Ω<br>td on<br>0,20<br>0,22<br>0,22<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Anstiegszeit,induktiveLast<br>Risetime,inductiveload<br>IC= 900 A, VCE= 600 V<br>VGE= ±15 V<br>RGon= 1,5Ω<br>tr<br>0,11<br>0,12<br>0,13<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Abschaltverzögerungszeit,induktiveLast<br>Turn-offdelaytime,inductiveload<br>IC= 900 A, VCE= 600 V<br>VGE= ±15 V<br>RGoff= 1,5Ω<br>td off<br>0,66<br>0,75<br>0,79<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Fallzeit,induktiveLast<br>Falltime,inductiveload<br>IC= 900 A, VCE= 600 V<br>VGE= ±15 V<br>RGoff= 1,5Ω<br>tf<br>0,09<br>0,14<br>0,15<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>EinschaltverlustenergieproPuls<br>Turn-onenergylossperpulse<br>IC= 900 A, VCE= 600 V, LS= 45 nH<br>VGE= ±15 V, di/dt = 5700 A/µs (Tvj= 150°C)<br>RGon= 1,3Ω<br>Eon<br>55,0<br>70,0<br>80,0<br>mJ<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>AbschaltverlustenergieproPuls<br>Turn-offenergylossperpulse<br>IC= 900 A, VCE= 600 V, LS= 45 nH<br>VGE= ±15 V, du/dt = 3200 V/µs (Tvj= 150°C)<br>RGoff= 1,5Ω<br>Eoff<br>85,0<br>120<br>130<br>mJ<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Kurzschlußverhalten<br>SCdata<br>VGE ≤15 V, VCC= 900 V<br>VCEmax= VCES-LsCE·di/dt<br>ISC<br>3600<br>A<br>Tvj= 150°C<br>tP ≤10 µs,<br>Wärmewiderstand,ChipbisGehäuse<br>Thermalresistance,junctiontocase<br>proIGBT/perIGBT<br>RthJC<br>29,5 K/kW<br>Wärmewiderstand,GehäusebisKühlkörper<br>Thermalresistance,casetoheatsink<br>proIGBT/perIGBT<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)<br>RthCH<br>14,0<br>K/kW<br>TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions<br>Tvj op<br>-40<br>150<br>°C||
2
> IGBT-ModuleIGBT-modules FF900R12IE4
## Technische�Information�/�Technical�Information
**==> picture [86 x 38] intentionally omitted <==**
**Vorläufige�Daten Preliminary�Data**
## **Diode,�Wechselrichter�/�Diode,�Inverter Höchstzulässige�Werte�/�Maximum�Rated�Values**
|PeriodischeSpitzensperrspannung<br>Repetitivepeakreversevoltage|Tvj= 25°C|VRRM|1200|V|
|---|---|---|---|---|
|Dauergleichstrom<br>ContinuousDCforwardcurrent||IF|900|A|
|PeriodischerSpitzenstrom<br>Repetitivepeakforwardcurrent|tP= 1 ms|IFRM|1800|A|
|Grenzlastintegral<br>I²t-value|VR= 0 V, tP= 10 ms, Tvj= 125°C<br>VR= 0 V, tP= 10 ms, Tvj= 150°C|I²t|91,0<br>88,0<br>|kA²s<br>kA²s|
## **Charakteristische�Werte�/�Characteristic�Values**
||||||||
|---|---|---|---|---|---|---|
|**CharakteristischeWerte/CharacteristicValues**|||min.|typ.|max.||
|Durchlassspannung<br>Forwardvoltage|IF= 900 A, VGE= 0 V<br>IF= 900 A, VGE= 0 V<br>IF= 900 A, VGE= 0 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|VF||1,90<br>1,85<br>1,80|2,30|V<br>V<br>V|
|Rückstromspitze<br>Peakreverserecoverycurrent|IF= 900 A, - diF/dt = 5700 A/µs (Tvj=150°C)<br>VR= 600 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|IRM||500<br>660<br>710||A<br>A<br>A|
|Sperrverzögerungsladung<br>Recoveredcharge|IF= 900 A, - diF/dt = 5700 A/µs (Tvj=150°C)<br>VR= 600 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Qr||90,0<br>150<br>195||µC<br>µC<br>µC|
|AbschaltenergieproPuls<br>Reverserecoveryenergy|IF= 900 A, - diF/dt = 5700 A/µs (Tvj=150°C)<br>VR= 600 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Erec||40,0<br>80,0<br>90,0||mJ<br>mJ<br>mJ|
|Wärmewiderstand,ChipbisGehäuse<br>Thermalresistance,junctiontocase|proDiode/perdiode|RthJC|||53,5|K/kW|
|Wärmewiderstand,GehäusebisKühlkörper<br>Thermalresistance,casetoheatsink|proDiode/perdiode<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)|RthCH||25,5||K/kW|
|TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions||Tvj op|-40||150|°C|
## **NTC-Widerstand�/�NTC-Thermistor**
## **Charakteristische�Werte�/�Characteristic�Values**
|**NTC-Widerstand/NTC-Thermistor**<br>|**NTC-Widerstand/NTC-Thermistor**<br>||||||
|---|---|---|---|---|---|---|
|**CharakteristischeWerte/CharacteristicValues**|||min.<br>typ.||max.||
|Nennwiderstand<br>Ratedresistance|TC= 25°C|R25||5,00||kΩ|
|AbweichungvonR100<br>DeviationofR100|TC= 100°C, R100= 493Ω|∆R/R|-5||5|%|
|Verlustleistung<br>Powerdissipation|TC= 25°C|P25|||20,0|mW|
|B-Wert<br>B-value|R2= R25exp [B25/50(1/T2- 1/(298,15 K))]|B25/50||3375||K|
|B-Wert<br>B-value|R2= R25exp [B25/80(1/T2- 1/(298,15 K))]|B25/80||3411||K|
|B-Wert<br>B-value|R2= R25exp [B25/100(1/T2- 1/(298,15 K))]|B25/100||3433||K|
Angaben�gemäß�gültiger�Application�Note. Specification�according�to�the�valid�application�note.
prepared�by:�AC date�of�publication:�2013-11-05 approved�by:�MS revision:�2.4
3
IGBT-Module IGBT-modules
## FF900R12IE4
|Modul / Module|||||||
|---|---|---|---|---|---|---|
|Isolations-Prüfspannung<br>~~Isolation test voltage~~<br>Material Modulgrundplatte<br>Material of module baseplate|RMS, f = 50 Hz, t = 1 min.<br>~~ee ~~|VISOL<br> ~~ee~~||4,0<br>Cu||kV|
|Innere Isolation<br>Internal isolation|Basisisolierung (Schutzklasse 1, EN61140)<br>basic insulation (class 1, IEC 61140)|||Al2O3|||
|Kriechstrecke<br>Creepage distance|Kontakt - Kuhlk6rper / terminal to heatsink<br>Kontakt - Kontakt / terminal to terminal|||33,0<br>33,0||mm|
|Luftstrecke<br>Clearance|Kontakt - Kuhlk6rper / terminal to heatsink<br>Kontakt - Kontakt / terminal to terminal|||19,0<br>19,0||mm|
|Vergleichszahl der Kriechwegbildung<br>Comperative tracking index||CTI||> 400|||
||||min.|typ.|max.||
|Warmewiderstand, Gehause bis Kuhlkérper| <br>Thermal resistance, case to heatsink|Paste<br>grease<br> pro Modul / per module<br>= 1 W/(m-k)/<br>= 1 W/(m-k)|RthCH||4,50||K/kW|
|Modulstreuinduktivität<br>~~Stray inductance module~~<br>Modulleitungswiderstand, Anschlusse -|~~ee ~~|LsCE<br> ~~ee ee~~|18<br>~~ee~~|||nH|
|Chip|TC<br>= 25°C, pro Schalter / per switch|RCC'+EE'||0,30||mΩ|
|Module lead resistance, terminals - chip|||||||
|Lagertemperatur<br>~~Storage temperature~~<br>Anzugsdrehmoment f. Modulmontage<br>Mounting torque for modul mounting|~~ee ~~<br>Schraube M5<br>- Montage gem. giltiger Applikationsschrift<br>Screw M5<br>- Mounting according to valid application note|Tstg<br>M<br> ~~ee ee~~|-40<br>150<br>3,00<br>-<br>6,00<br>~~ee~~|||°C<br>Nm|
|Anzugsdrehmoment f. elektr. Anschlusse<br>Terminal connection torque||Schraube M4<br>- Montage gem. gultiger Applikationsschrift<br>Screw M4<br>- Mounting according to valid application note<br>Schraube M8<br>- Montage gem. giltiger Applikationsschrift<br>Screw M8<br>- Mounting according to valid application note|M|1,8<br>8,0|-<br>-|2,1<br>10|Nm<br>Nm|
|Gewicht<br>Weight||G||825||g|
4
IGBT-Module IGBT-modules
## FF900R12IE4
**==> picture [489 x 596] intentionally omitted <==**
**----- Start of picture text -----**<br>
IC CE) IC CE)<br>VGE “isV Tvj =150°C<br>1800 1800<br>[pee Tvj = 25°C el [ VGE = 19V pees<br>1600 Tvj = 125°C 1600 VGE = 17V<br>(i Tvj = 150°C VGE = 15V el a<br>[ee n ro VGE = 13V re ee<br>1400 a 1400 I VGE = 11V ee eae<br>VGE = 9V<br>ee ee ee ee eee I i ire<br>a ee ee ee [eee<br>1200 1200<br>a ee ee ee ee es ee<br>1000 eea ee e e eee eeee 1000 re P eee|Pe<br>800 ee ee ee eee 800 ee ee<br>a ee ee ee eee e ee<br>ee ee ee ee e<br>600 ee 600 ee<br>aa ee ee ee eene eee<br>400 400<br>Pt ee eee ee ee Ree<br>200 ee eedtee ee ee 200 Pe e 7r e e<br>0 P er | 0 74 eee<br>0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0<br>VCE [V] VCE [V]<br>Ubertragungscharakteristik IGBT,Wechselrichter (typisch) Schaltverluste IGBT,Wechselrichter (typisch)<br>transfer characteristic IGBT,Inverter (typical) switching losses IGBT, Inverter (typical)<br>IC GE) Eon C off C)<br>VCE a oov VGE eV R Gon C43 Ω ,R Goff =1.5 Ω ,V CE =600V<br>1800<br>Tvj = 25°C Eon, Tvj = 125°C<br>1600 I Tvj = 125°C t re AT 250 Eon, Tvj = 150°C<br>F Tvj = 150°C oo Eoff, Tvj = 125°C<br>Eoff, Tvj = 150°C<br>e s eo | ETLEEL<br>1400 a a a A 200 BERREE Lk<br>aee<br>1200<br>a ee A N<br>1000 ee) 150<br>ae<br>800 reee ee ee ee ee Oe RDLAs ZANDECaANE<br>100<br>i eeAe eeBY<br>600 ee Ge an<br>ee ee ee ee ee Te<br>ee ee ee<br>ee<br>400<br>50<br>ee A ee Pee eee<br>ee ee eee Joe ae<br>200 e/a eee<br>ee ee ee ee ee Za<br>p ee<br>0 oe 0 OLAA<br>5 6 7 8 9 10 11 12 0 200 400 600 800 1000 1200 1400 1600 1800<br>VGE [V] IC [A]<br> [A] [A]<br>IC IC<br> [A]<br>IC E [mJ]<br>**----- End of picture text -----**<br>
5
## IGBT-Module IGBT-modules
## FF900R12IE4
**==> picture [486 x 596] intentionally omitted <==**
**----- Start of picture text -----**<br>
Eon =f(R),E G off =f(R G) ZthJC = f(t)<br>VGE =+15V,1 C =900A,V CE =600V<br>450 100<br>SEE Po<br>Eon, Tvj = 125°C i ZthJC : IGBT eee<br>- Eon, Tvj = 150°C Wide HH—a oeEE HH} | tH<br>400<br>Eoff, Tvj = 125°C<br>Eoff, Tvj = 150°C<br>350 Ia W y | LeA a ee A ee l<br>PLL raa EH H<br>300 ee 10 CI T<br>EEE WAEEE PEEeee ie eel eh eT<br>250200 PPTL LL LAZAL( EL |a nn<br>ra PAI TI PE TET<br>150 EEE 1<br>ii s of/ —|—aa LLL EE = EMITPEre ee HH EH<br>100 a eel<br>Wa caaeeeeeeel |<br>i: 1 2 3 4<br>50 ri[K/kW]: 1,2 6 20 2,3<br>τ i[s]: 0,0008 0,013 0,05 0,6<br>0 0,1<br>0,0 1,0 2,0 3,0 4,0 5,0 6,0 7,0 8,0 0,001 0,01 0,1 1 10<br>RG [ Ω ] t [s]<br>Sicherer Ruckwarts-Arbeitsbereich IGBT,Wechselrichter Durchlasskennlinie der Diode, Wechselrichter (typisch)<br>(RBSOA) forward characteristic of Diode, Inverter (typical)<br>reverse bias safe operating area IGBT,Inverter (RBSOA) IF =f(V F)<br>IC =f(V CE)<br>VGE 0 V,R Goff =1.5 Ω ,T vj =150°C<br>2000 [peer IC, Modul Ee Os es 1800 7 Tvj = 25°C<br>1800 IC, Chip 1600 Tvj = 125°C<br>f= F Tvj = 150°C E<br>[——T | | | a<br>1600<br>————SS ce 1400 ee<br>1400<br>pf} {|_| 14} 1200 es<br>ee a oo<br>1200<br>a 1000 oT<br>ee ee ee ee ee re ee ee ee ee<br>1000<br>800<br>800 a a ee es es<br>a ee 600 es es 7<br>600<br>Pf fF PP EY eee/a<br>a)<br>400<br>400<br>pt} {| | _1 4} _ a 7 A<br>200 poee ee ee ee ee ee 200 A:<br>0 es 0 a aa eee eee<br>0 200 400 600 800 1000 1200 1400 0,0 0,5 1,0 1,5 2,0 2,5 3,0<br>VCE [V] VF [V]<br> [K/kW]<br>E [mJ]<br>thJC<br>Z<br> [A] [A]<br>IC IF<br>**----- End of picture text -----**<br>
6
## IGBT-Module IGBT-modules
## FF900R12IE4
**==> picture [486 x 279] intentionally omitted <==**
**----- Start of picture text -----**<br>
Erec = fil F) Erec =f(R G)<br>RGon =1.3 Ω ,V CE =600V IF =900A,V CE =600V<br>120<br>120 = Erec, T C vj = 125°C es E Erec, Tvj = 125°C o<br>E Erec, Tvj = 150°C E 110 fe Erec, Tvj = 150°C<br>110<br>|Pt tT | | tt PEPE 100 eeeYT | | [{|<br>100 Pt tT | tT tp tt eet Ff<br>Pot t T 90 x<br>90 Pt ft ft | | | tT ey ee x<br>i SENT CREeeeeeeee<br>80<br>80<br>Pt | | | | | tet ep yt tt i x<br>POC ae PET N GREE EEE<br>70<br>70 Pt tt | tee pe NOS<br>PEPE<br>60<br>60 P| | | iyPrPTT tTEEE PP KORbs PSE<br>per SEES<br>50<br>50<br>Pt tT eevee | tT tt tT tT | TT > i<br>Oe 74 40 PTT TT yy) ye KEES<br>40 Pi yA tT | Pt tT tT tT |<br>PRR<br>30 PLA | | | | tT tT TT 30<br>BARRE EEE LO<br>20 Py | {| | | | tT tT TT 20<br>10 Pt f {| | | | ft | tt tt 10<br>PEREEEEREEREEEER = ee<br>0 ptPt tT| |PP| te ft teeeete tt 0 Py TL ETL TLE LEE<br>0 200 400 600 800 1000 1200 1400 1600 0,0 1,0 2,0 3,0 4,0 5,0 6,0 7,0 8,0<br>IF [A] RG [ Ω ]<br>E [mJ] E [mJ]<br>**----- End of picture text -----**<br>
**==> picture [487 x 280] intentionally omitted <==**
**----- Start of picture text -----**<br>
ZthJC = f (t) R=f(T)<br>100 100000<br>_— i ZthJC : Diode oo ee 1 I= Rtyp a ————————<br>( e e (cr e r<br>PT TT ee TE T se<br>2 || a ee ee ee<br>PCA, ETE ET) PF | ET<br>IIE KE<br>10 10000<br>Pt tt tt Se<br>a<br>7| Tei tT i ee Ns se<br>rT TT TT Ne ee ee<br>Cen ron) ERaN<br>a<br>1 1000<br>Pt et te jp} |__| | |_|<br>eeeee aa<br>Po eee a<br>rT TT TT TT se<br>i: 1 2 3 4<br>ri[K/kW]: 4,5 12,7 35,4 0,9<br>τ i[s]: 0,0008 0,013 0,05 0,6<br>0,1 100<br>0,001 0,01 0,1 1 10 0 20 40 60 80 100 120 140 160<br>t [s] TC [°C]<br>] Ω<br> [K/kW] R[<br>thJC<br>Z<br>**----- End of picture text -----**<br>
7
**==> picture [523 x 268] intentionally omitted <==**
**----- Start of picture text -----**<br>
Technische�Information�/�Technical�Information<br>IGBT-ModuleIGBT-modules FF900R12IE4<br>Vorläufige�Daten<br>Preliminary�Data<br>Schaltplan�/�circuit_diagram_headline<br>Gehäuseabmessungen�/�package�outlines<br>**----- End of picture text -----**<br>
prepared�by:�AC date�of�publication:�2013-11-05 approved�by:�MS revision:�2.4
8
**==> picture [66 x 19] intentionally omitted <==**
**----- Start of picture text -----**<br>
IGBT-Module<br>IGBT-modules<br>**----- End of picture text -----**<br>
## FF900R12IE4
## **Nutzungsbedingungen**
## application.
9
Updated at April 28, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
About Novapart
Novapart is a B2B electronic component broker specialising in stock shortages and cost reduction. We source hard-to-find parts and identify compliant alternatives across a catalogue of 410,000+ components from 500+ manufacturers.
Learn more →Stock Shortage Specialist
When a component is unavailable, discontinued or has an unacceptable lead time, we tap into our network of vetted European and Asian distributors to source what you need — without compromising on quality or traceability.
Request a quote →Compliant Alternatives
We identify pin-to-pin, electrically equivalent substitutes that meet the same certifications (RoHS, AEC-Q100, REACH) as your original specification — validated against datasheets, not just part numbers. Often at a lower cost.
BOM Analysis service →