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FF650R17IE4DB2BOSA1
IGBT Module, Dual, 930 A, 2 V, 4.15 kW, 150 °C, Module
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: INFINEON
- Product type: IGBT Modules
- Transistor Polarity:N Channel; DC Collector Current:650A; Collector Emitter Saturation Voltage Vce(on):2V; Power Dissipation Pd:4.15kW; Collector Emitter Voltage V(br)ceo:1.7kV; Transist
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 10Pins
- Product Range: PrimePACK 2 Series
- IGBT Technology: IGBT 4
- IGBT Termination: Tab
- Power Dissipation: 4.15kW
- IGBT Configuration: Dual
- Transistor Mounting: Panel
- Transistor Polarity: N Channel
- DC Collector Current: 650A
- Power Dissipation Pd: 4.15kW
- Transistor Case Style: Module
- Operating Temperature Max: 150°C
- Junction Temperature Tj Max: 150°C
- Continuous Collector Current: 930A
- Collector Emitter Voltage Max: 1.7kV
- Collector Emitter Voltage V(br)ceo: 1.7kV
- Collector Emitter Saturation Voltage: 2V
- Collector Emitter Saturation Voltage Vce(on): 2V
| Delivery and price | |
|---|---|
| Units per pack | 1 |
| Price | 488.96 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
## IGBT-模块 IGBT-modules FF650R17IE4D_B2
VCES = 1700V IC nom = 650A / ICRM = 1300A
## **典型应用**
- 三电平应用
- 辅助逆变器
- • 大功率变流器
- • 电机传动 • 大功率变流器
- • 风力发电机
- 3-Level-Applications
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## **电气特性**
-
- 高直流稳定性
- • 高电流密度 • 低开关损耗 • T
- 增大的二极管针对再生运行
- CEsat
-
-
-
-
- T
-
- CEsat
## **机械特性**
- •
- 高爬电距离和电气间隙
- • 高功率周次和温度周次能力
- • 高功率密度
- • 铜基板
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1
IGBT-模块 IGBT-modules FF650R17IE4D_B2
## 技术信息�/�Technical�Information
**==> picture [86 x 38] intentionally omitted <==**
**初步数据 Preliminary�Data**
## **IGBT,�逆变器�/�IGBT,Inverter 最大额定值�/�Maximum�Rated�Values**
|技术信息/TechnicalInformation<br>FF650R17IE4D_B2<br>IGBT-模块<br>IGBT-modules||
|---|---|
|preparedby:TA<br>approvedby:PL<br>dateofpublication:2013-04-17<br>revision:2.1<br>**初步数据**<br>**PreliminaryData**<br>**IGBT,逆变器/IGBT,Inverter**<br>**最大额定值/MaximumRatedValues**<br>集电极－发射极电压<br>Collector-emittervoltage<br>Tvj= 25°C<br>VCES<br>1700<br>V<br>连续集电极直流电流<br>ContinuousDCcollectorcurrent<br>TC= 100°C, Tvj= 175°C<br>TC= 25°C, Tvj= 175°C<br>IC nom<br>IC<br>650<br>930<br>A<br>A<br>集电极重复峰值电流<br>Repetitivepeakcollectorcurrent<br>tP= 1 ms<br>ICRM<br>1300<br>A<br>总损耗<br>Totalpowerdissipation<br>TC= 25°C, Tvj= 175°C<br>Ptot<br>4,15<br>kW<br>栅极－发射极峰值电压<br>Gate-emitterpeakvoltage<br>VGES<br>+/-20<br>V<br>**特征值/CharacteristicValues**<br>min.<br>typ.<br>max.<br>集电极－发射极饱和电压<br>Collector-emittersaturationvoltage<br>IC= 650 A, VGE= 15 V<br>IC= 650 A, VGE= 15 V<br>IC= 650 A, VGE= 15 V<br>VCE sat<br>2,00<br>2,35<br>2,45<br>2,45<br>2,80<br>V<br>V<br>V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>栅极阈值电压<br>Gatethresholdvoltage<br>IC= 24,0 mA, VCE= VGE, Tvj= 25°C<br>VGEth<br>5,2<br>5,8<br>6,4<br>V<br>栅极电荷<br>Gatecharge<br>VGE= -15 V ... +15 V<br>QG<br>7,00<br>µC<br>内部栅极电阻<br>Internalgateresistor<br>Tvj= 25°C<br>RGint<br>2,3<br>Ω<br>输入电容<br>Inputcapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cies<br>54,0<br>nF<br>反向传输电容<br>Reversetransfercapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cres<br>1,70<br>nF<br>集电极-发射极截止电流<br>Collector-emittercut-offcurrent<br>VCE= 1700 V, VGE= 0 V, Tvj= 25°C<br>ICES<br>5,0<br>mA<br>栅极-发射极漏电流<br>Gate-emitterleakagecurrent<br>VCE= 0 V, VGE= 20 V, Tvj= 25°C<br>IGES<br>400<br>nA<br>开通延迟时间(电感负载)<br>Turn-ondelaytime,inductiveload<br>IC= 650 A, VCE= 900 V<br>VGE= ±15 V<br>RGon= 1,0Ω<br>td on<br>0,58<br>0,645<br>0,655<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>上升时间(电感负载)<br>Risetime,inductiveload<br>IC= 650 A, VCE= 900 V<br>VGE= ±15 V<br>RGon= 1,0Ω<br>tr<br>0,105<br>0,11<br>0,11<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>关断延迟时间(电感负载)<br>Turn-offdelaytime,inductiveload<br>IC= 650 A, VCE= 900 V<br>VGE= ±15 V<br>RGoff= 2,7Ω<br>td off<br>1,00<br>1,25<br>1,30<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>下降时间(电感负载)<br>Falltime,inductiveload<br>IC= 650 A, VCE= 900 V<br>VGE= ±15 V<br>RGoff= 2,7Ω<br>tf<br>0,29<br>0,49<br>0,57<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>开通损耗(每脉冲)<br>Turn-onenergylossperpulse<br>IC= 650 A, VCE= 900 V, LS= 45 nH<br>VGE= ±15 V, di/dt = 5800 A/µs (Tvj=150°C)<br>RGon= 1,0Ω<br>Eon<br>180<br>260<br>280<br>mJ<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>关断损耗(每脉冲）<br>Turn-offenergylossperpulse<br>IC= 650 A, VCE= 900 V, LS= 45 nH<br>VGE= ±15 V, du/dt = 3200 V/µs (Tvj=150°C)<br>RGoff= 2,7Ω<br>Eoff<br>140<br>205<br>230<br>mJ<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>短路数据<br>SCdata<br>VGE ≤15 V, VCC= 1000 V<br>VCEmax= VCES-LsCE·di/dt<br>ISC<br>2700<br>A<br>Tvj= 150°C<br>tP ≤10 µs,<br>结－壳热阻<br>Thermalresistance,junctiontocase<br>每个IGBT/perIGBT<br>RthJC<br>36,0 K/kW<br>壳－散热器热阻<br>Thermalresistance,casetoheatsink<br>每个IGBT/perIGBT<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)<br>RthCH<br>15,0<br>K/kW||
|preparedby:TA|dateofpublication:2013-04-17|
|---|---|
|approvedby:PL|revision:2.1|
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IGBT-模块 IGBT-modules FF650R17IE4D_B2
## 技术信息�/�Technical�Information
**==> picture [86 x 38] intentionally omitted <==**
**初步数据 Preliminary�Data**
## **二极管,逆变器�/�Diode,�Inverter 最大额定值�/�Maximum�Rated�Values**
|反向重复峰值电压<br>Repetitivepeakreversevoltage|Tvj= 25°C|VRRM|1700|1700||V|
|---|---|---|---|---|---|---|
|连续正向直流电流<br>ContinuousDCforwardcurrent||IF|650|||A|
|正向重复峰值电流<br>Repetitivepeakforwardcurrent|tP= 1 ms|IFRM|1300|||A|
|I2t-值<br>I²t-value|VR= 0 V, tP= 10 ms, Tvj= 125°C<br>VR= 0 V, tP= 10 ms, Tvj= 150°C|I²t|105<br>100|||kA²s<br>kA²s|
|最大耗散功率<br>Maximumpowerdissipation|Tvj= 125°C|PRQM|820|||kW|
|**特征值/CharacteristicValues**|||min.|typ.|max.||
|正向电压<br>Forwardvoltage|IF= 650 A, VGE= 0 V<br>IF= 650 A, VGE= 0 V<br>IF= 650 A, VGE= 0 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|VF||1,70<br>1,70<br>1,70|2,15|V<br>V<br>V|
|反向恢复峰值电流<br>Peakreverserecoverycurrent|IF= 650 A, - diF/dt = 5800 A/µs (Tvj=150°C)<br>VR= 900 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|IRM||775<br>860<br>890||A<br>A<br>A|
|恢复电荷<br>Recoveredcharge|IF= 650 A, - diF/dt = 5800 A/µs (Tvj=150°C)<br>VR= 900 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Qr||175<br>300<br>335||µC<br>µC<br>µC|
|反向恢复损耗（每脉冲）<br>Reverserecoveryenergy|IF= 650 A, - diF/dt = 5800 A/µs (Tvj=150°C)<br>VR= 900 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Erec||86,0<br>155<br>180||mJ<br>mJ<br>mJ|
|结－壳热阻<br>Thermalresistance,junctiontocase|每个二极管/perdiode|RthJC|||52,5|K/kW|
|壳－散热器热阻<br>Thermalresistance,casetoheatsink|每个二极管/perdiode<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)|RthCH||22,0||K/kW|
## **负温度系数热敏电阻�/�NTC-Thermistor**
## **特征值�/�Characteristic�Values**
|**负温度系数热敏电阻/NTC-Thermistor**<br>|**负温度系数热敏电阻/NTC-Thermistor**<br>||||||
|---|---|---|---|---|---|---|
|**特征值/CharacteristicValues**|||min.<br>typ.||max.||
|额定电阻值<br>Ratedresistance|TC= 25°C|R25||5,00||kΩ|
|R100偏差<br>DeviationofR100|TC= 100°C, R100= 493Ω|∆R/R|-5||5|%|
|耗散功率<br>Powerdissipation|TC= 25°C|P25|||20,0|mW|
|B-值<br>B-value|R2= R25exp [B25/50(1/T2- 1/(298,15 K))]|B25/50||3375||K|
|B-值<br>B-value|R2= R25exp [B25/80(1/T2- 1/(298,15 K))]|B25/80||3411||K|
|B-值<br>B-value|R2= R25exp [B25/100(1/T2- 1/(298,15 K))]|B25/100||3433||K|
|根据应用手册标定<br>Specificationaccordingtothevalidapplicationnote.|||||||
prepared�by:�TA date�of�publication:�2013-04-17 approved�by:�PL revision:�2.1
3
IGBT-模块 IGBT-modules
## FF650R17IE4D_B2
## **初步数据**
|#R_<br>| Module|||||||||
|---|---|---|---|---|---|---|---|---|
|绝缘测试电压|RMS, f = 50 Hz, t = 1 min.|VISOL||||4,0||kV|
|模块基板材料||||||Cu|||
|内部绝缘材料<br>Internal isolation|BAM (class 1, IEC 61140)<br>basic insulation (class 1, IEC 61140)|||||Al2O3|||
|爬电距离<br>Creepage distance|OASENS<br>ER R-BFA /terminal toheatsink<br>OASENS<br>ER R- HOSENS<br>KH<br>/terminal to terminal|||||33,0<br>33,0||mm|
|电气间隙<br>Clearance|OASENS<br>ER R-BFA /terminal toheatsink<br>OASENS<br>ER R- HOSENS<br>KH<br>/terminal to terminal|||||19,0<br>19,0||mm|
|相对电痕指数||CTI||||> 400|||
|||||min.||typ.|max.||
|壳－散热器热阻<br>Thermal resistance, case to heatsink|Paste<br>grease<br>#3-SER /permodule<br>= 1 W/(m‘k)/<br>= 1 W/(m-k)|RthCH||||4,50||K/kW|
|杂散电感,模块||LsCE||||18||nH|
|模块引线电阻,端子-芯片|TC<br>-<br>°<br>ON<br>‘|RCC'+EE'||||0,30||mΩ|
|最大结温<br>在开关状态下温度<br>~~Maximum junction temperature~~<br>~~Temperature under switching conditions~~|~~EESE BZ) -4 BB / inverter, brake-chopper~~<br>~~TEBE Bel2)-4H AR / inverter, brake-chopper~~|Tvj max<br>175<br>Tvj op<br>-40<br>150<br>~~Pf fd~~<br>~~Ff |]~~||||||°C<br>°C|
|储存温度||Tstg||-40|||150|°C|
|模块安装的安装扭距<br>Mounting torque for modul mounting|**S**eeM5ARSEAR VAY OyA AET<br>crew M5<br>- Mounting according to valid application note|M||3,00||-|6,00|Nm|
|端子联接扭距<br>,;<br>Terminalconnection torque|M<br>1,8<br>8,0<br>-<br>-<br>2,1<br>10<br>$e MS AHEAD VAY Ay A AET<br>ScrewM8 -Mountingaccordingto validapplicationnote~~aaa~~|||||||Nm<br>Nm|
|重量<br>Weight||G||||825||g|
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#£ 7 {3 & / Technical Information -—<br>IGBT-模块<br>IGBT-modules FF650R17IE4D_B2<br>easestems | Geom<br>初步数据<br>Preliminary Data<br>SAHWStE IGBT, HaEZs ( RF!) WAGE IGBT, aes ( SAB)<br>output characteristic IGBT,Inverter (typical) output characteristic IGBT,Inverter (typical)<br>IC CE) IC CE)<br>VGE “255 V Tvj =150°C<br>1300 1300<br>Tvj = 25°C VGE = 20V<br>1200 Tvj = 125°C 1200 VGE = 15V<br>1100 fF Tvj = 150°C H PAo dae 1100 me VVGEGE = 12V = 10V LEoo eaee<br>VGE = 9V<br>1000 ee 1000 VGE = 8V PAL<br>900 900<br>Pot | tT A P oeee<br>800 800<br>eee eee eee<br>700 700<br>po p o<br>600 ee ee 600 Pt | a<br>500 Potee)| Ae 500 eeee ee<br>400 400<br>ee ee Bran<br>300 i 300 ne)2<br>200 200<br>100 Pot YEae 100 P || Agee |<br>0 | fy | | | | 0 | Latgee| | |<br>0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0<br>VCE [V] VCE [V]<br>feFStt IGBT, HaseS (FAA) FFHIRE IGBT, HSS ( FAB)<br>transfer characteristic IGBT,Inverter(typical) switching losses IGBT,Inverter (typical)<br>IC GE) Eon C off C)<br>VCE Sov VGE LneVR Gon ot Ω ,R Goff =27 Ω ,V CE =900V<br>1300 550<br>Tvj = 25°C Eon, Tvj = 125°C<br>1200 Tvj = 125°C 500 Eon, Tvj = 150°C<br>Tvj = 150°C Eoff, Tvj = 125°C<br>1100 E i |re |... f¢ 450 F Eoff, Tvj = 150°C L<br>eee nn ir<br>1000 Pot a<br>fT | | ly A a<br>400<br>900<br>350<br>800 See eee} ( y e<br>700 ee ee 300 Po<br>600 eee 250 P|A ee<br>le ae |<br>500<br>200<br>400<br>Pot | mT eeA 150 rT eee<br>300 ee eer<br>100<br>200<br>50<br>100 Pi ey dLFT [wm]<br>0 ee ee 0 pt | | |<br>5 6 7 8 9 10 11 12 0 200 400 600 800 1000 1200<br>VGE [V] IC [A]<br> [A] [A]<br>IC IC<br> [A]<br>IC E [mJ]<br>**----- End of picture text -----**<br>
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IGBT-模块 IGBT-modules
## FF650R17IE4D_B2
## **初步数据**
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Eon =f(R),E G off =f(R G) ZthJC = f(t)<br>VGE =+15V,| C =650A,V CE =900V<br>1000 100<br>— SS<br>Eon, Tvj = 125°C ZthJC : IGBT<br>900 Eon, Tvj = 150°C Fo) |e 4 HH— ooo EE or TTHH}TTtHTTT]<br>Eoff, Tvj = 125°C<br>Eoff, Tvj = 150°C<br>800 P| YT TT TE TTT rT TTT TT T TT<br>l o) et LtATTSeT a<br>700<br>a 10 CLIN<br>LUI LI<br>600500 P| Let] Pf YTrT| TyATETTTT TT TTT TT TTT<br>400 | Af | PG PALLa eeLATE eeETEll<br>1<br>300 eTy LETTEerTET<br>200 | |__| fb aes a e e e eee |<br>i: 1 2 3 4<br>100 eeee eetYT TT eeTE T TT| r τ ii[K/kW]: [s]: rT 1,2 0,0008 TTT 5,5 0,013 25,5 0,05 TT 3,8 0,6 TTT<br>a ea Il<br>0 e e 0,1 |<br>0 2 4 6 8 10 12 14 0,001 0,01 0,1 1 10<br>RG [ Ω ] t [s]<br>RSL IGBT, #BE ( RBSOA ) TEMES ae eae e ( BRAY)<br>reverse bias safe operating area IGBT,Inverter (RBSOA) forward characteristic of Diode, Inverter (typical)<br>IC =f(V CE) IF =f(V F)<br>VGE SVR Goff =2.7 Ω ,T vj =150°C<br>1400 1300<br>IC, Modul Tvj = 25°C<br>IC, Chip 1200 Tvj = 125°C<br>1200 eeaa a 1100 a Tvj = 150°C ee<br>1000<br>1000<br>PTT EET 900 e e eee ae<br>800<br>800 i }<br>700<br>Litt tt tt I<br>600<br>600<br>500<br>fa<br>400<br>400<br>300<br>200 200<br>100<br>0 TTL ELEY 0 Eee<br>0 200 400 600 800 1000 1200 1400 1600 1800 0,0 0,5 1,0 1,5 2,0 2,5<br>VCE [V] VF [V]<br> [K/kW]<br>E [mJ]<br>thJC<br>Z<br> [A] [A]<br>IC IF<br>**----- End of picture text -----**<br>
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IGBT-模块<br>IGBT-modules<br>**----- End of picture text -----**<br>
## FF650R17IE4D_B2
## **初步数据**
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E arin rec F) losses Diode, Inverter (typical) E owt rec G losses ) Diode, Inverter (typical)<br>RGon =1 Ω ,V CE =900V IF =650A,V CE =900V<br>220 220<br>Erec, Tvj = 125°C Erec, Tvj = 125°C<br>200 S Erec, Tvj = 150°C LL 200 e Erec, Tvj = 150°C a<br>180 180<br>poy eer er<br>160 160<br>ea aa PN EE EE<br>140 140<br>|v tt ENE<br>naam es Nee eee<br>120 120<br>100 | a7 tl | | ft 100 PEE AL.<br>AL ——~ a<br>80 80<br>A) aes<br>60 60<br>40 40<br>20 20<br>0 0<br>0 200 400 600 800 1000 1200 0 1 2 3 4 5 6 7 8 9 10<br>IF [A] RG [ Ω ]<br>RAAB —ME ees STK —MB, LEE (SOA)<br>Z transient thJC thermal impedance Diode, Inverter I safe R operation R) area Diode, Inverter (SOA)<br>of Tvj Sor<br>1000<br>— | ZthJC : Diode eee 1400 PFp—se IR, Modul sf}T TT<br>a a a A 1200 ee<br>100 1000<br>eeea eeee<br>AM AINE LAVAL a e<br>PT<br>800<br>Ad<br>600<br>pf pf de<br>10<br>eea eeee ee<br>Le AINE LVM AAT PPPs<br>PY [TT] ee 400<br>i: 1 2 3 4 200<br>ri[K/kW]: 3,29 12,44 32,92 3,66<br>τ i[s]: 0,0008 0,013 0,05 0,6<br>a a | ae ec<br>UL ooo | eee<br>1 0<br>0,001 0,01 0,1 1 10 0 200 400 600 800 1000 1200 1400 1600 1800<br>t [s] VR [V]<br>E [mJ] E [mJ]<br> [K/kW]thJC [A]IR<br>Z<br>**----- End of picture text -----**<br>
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## IGBT-模块 IGBT-modules FF650R17IE4D_B2
## **初步数据**
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100000<br>Rtyp<br>H— = (| —<br>Ras ce<br>e e<br>e a e ssee<br>10000 | | |<br>nt [i] ee ee<br>———<br>ER Ne es es es es es<br>a Ne eses<br>P|NNee<br>pp Nf<br>1000 ERNE<br>————a<br>poNN<br>sea es<br>a ee eee<br>100<br>0 20 40 60 80 100 120 140 160<br>TC [°C]<br>] Ω<br>R[<br>**----- End of picture text -----**<br>
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技术信息�/�Technical�Information<br>IGBT-模块<br>IGBT-modules FF650R17IE4D_B2<br>初步数据<br>Preliminary�Data<br>接线图�/�circuit_diagram_headline<br>封装尺寸�/�package�outlines<br>**----- End of picture text -----**<br>
prepared�by:�TA date�of�publication:�2013-04-17 approved�by:�PL revision:�2.1
9
IGBT-模块 IGBT-modules
## FF650R17IE4D_B2
## **初步数据**
## **使用条件和条款**
## 使用条件和条款
产品规格书中的数据是专门为技术人员提供的，您和您的技术部门应该针对您的应用来评估产品及产品的所有参数是否适合 产品规格书中所描述的产品特性是被保证的，任何这种保证严格依照供货协议中所涉及的条件和条款。 除此之外，产品和产品的特性没有任何的保证 请注意安装及应用指南中的信息。
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请注意，对这类应用我们强烈建议
保留产品规格书的修改权
10
Updated at April 28, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
About Novapart
Novapart is a B2B electronic component broker specialising in stock shortages and cost reduction. We source hard-to-find parts and identify compliant alternatives across a catalogue of 410,000+ components from 500+ manufacturers.
Learn more →Stock Shortage Specialist
When a component is unavailable, discontinued or has an unacceptable lead time, we tap into our network of vetted European and Asian distributors to source what you need — without compromising on quality or traceability.
Request a quote →Compliant Alternatives
We identify pin-to-pin, electrically equivalent substitutes that meet the same certifications (RoHS, AEC-Q100, REACH) as your original specification — validated against datasheets, not just part numbers. Often at a lower cost.
BOM Analysis service →