FF600R17ME4BOSA1

IGBT Module, Dual, 950 A, 1.95 V, 150 °C, Module

⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.

Manufacturer: INFINEON
Product type: IGBT Modules
Transistor Polarity:N Channel; DC Collector Current:950A; Collector Emitter Saturation Voltage Vce(on):1.95V; Power Dissipation Pd:-; Collector Emitter Voltage V(br)ceo:1.7kV; Transistor
SVHC: No SVHC (23-Jan-2024)
Product Range: EconoDUAL 3
IGBT Technology: IGBT 4 [Trench/Field Stop]
IGBT Termination: Press Fit
Power Dissipation: -
IGBT Configuration: Dual
Transistor Mounting: Panel
Transistor Polarity: N Channel
DC Collector Current: 950A
Power Dissipation Pd: -
Transistor Case Style: Module
Operating Temperature Max: 150°C
Junction Temperature Tj Max: 150°C
Continuous Collector Current: 950A
Collector Emitter Voltage Max: 1.7kV
Collector Emitter Voltage V(br)ceo: 1.7kV
Collector Emitter Saturation Voltage: 1.95V
Collector Emitter Saturation Voltage Vce(on): 1.95V

Delivery and price
Units per pack	5
Price	283.2 €
Current stock	10+
Lead time	30 days

Datasheet

## FF600R17ME4 

VCES = 1700V 

IC nom = 600A / ICRM = 1200A 

- Hochleistungsumrichter 

- Windgeneratoren 

- 

- CEsat 

- • T vj op = 150°C • VCEsat mit 

- 

- 

- Standardgehäuse 

- 

- 

- 

• CEsat • T vj op = • VCEsat 

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- 

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## **Digit** 

Datasheet www.infineon.com 

2016-11-08 

FF600R17ME4 

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|**IGBT,Wechselrichter/IGBT,Inverter**<br>**HöchstzulässigeWerte/MaximumRatedValues**|**IGBT,Wechselrichter/IGBT,Inverter**<br>**HöchstzulässigeWerte/MaximumRatedValues**||||||
|---|---|---|---|---|---|---|
|Kollektor-Emitter-Sperrspannung<br>Collector-emittervoltage|Tvj= 25°C|VCES|1700|||V|
|Kollektor-Dauergleichstrom<br>ContinuousDCcollectorcurrent|TC= 108°C, Tvj max= 175°C<br>TC= 25°C, Tvj max= 175°C|IC nom<br>IC|600<br>950|||A<br>A|
|PeriodischerKollektor-Spitzenstrom<br>Repetitivepeakcollectorcurrent|tP= 1 ms|ICRM|1200|||A|
|Gate-Emitter-Spitzenspannung<br>Gate-emitterpeakvoltage||VGES|+/-20|||V|
|**CharakteristischeWerte/CharacteristicValues**|||min.|typ.|max.||
|Kollektor-Emitter-Sättigungsspannung<br>Collector-emittersaturationvoltage|IC= 600 A, VGE= 15 V<br>IC= 600 A, VGE= 15 V<br>IC= 600 A, VGE= 15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|VCE sat||1,95<br>2,35<br>2,45|2,30|V<br>V<br>V|
|Gate-Schwellenspannung<br>Gatethresholdvoltage|IC= 24,0 mA, VCE= VGE, Tvj= 25°C|VGEth|5,20|5,80|6,40|V|
|Gateladung<br>Gatecharge|VGE= -15 V ... +15 V|QG||6,15||µC|
|InternerGatewiderstand<br>Internalgateresistor|Tvj= 25°C|RGint||1,2||Ω|
|Eingangskapazität<br>Inputcapacitance|f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V|Cies||48,0||nF|
|Rückwirkungskapazität<br>Reversetransfercapacitance|f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V|Cres||1,55||nF|
|Kollektor-Emitter-Reststrom<br>Collector-emittercut-offcurrent|VCE= 1700 V, VGE= 0 V, Tvj= 25°C|ICES|||1,0|mA|
|Gate-Emitter-Reststrom<br>Gate-emitterleakagecurrent|VCE= 0 V, VGE= 20 V, Tvj= 25°C|IGES|||100|nA|
|Einschaltverzögerungszeit,induktiveLast<br>Turn-ondelaytime,inductiveload|IC= 600 A, VCE= 900 V<br>VGE= ±15 V<br>RGon= 1,0Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|td on||0,20<br>0,21<br>0,24||µs<br>µs<br>µs|
|Anstiegszeit,induktiveLast<br>Risetime,inductiveload|IC= 600 A, VCE= 900 V<br>VGE= ±15 V<br>RGon= 1,0Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|tr||0,07<br>0,08<br>0,08||µs<br>µs<br>µs|
|Abschaltverzögerungszeit,induktiveLast<br>Turn-offdelaytime,inductiveload|IC= 600 A, VCE= 900 V<br>VGE= ±15 V<br>RGoff= 1,0Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|td off||0,62<br>0,75<br>0,80||µs<br>µs<br>µs|
|Fallzeit,induktiveLast<br>Falltime,inductiveload|IC= 600 A, VCE= 900 V<br>VGE= ±15 V<br>RGoff= 1,0Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|tf||0,11<br>0,16<br>0,18||µs<br>µs<br>µs|
|EinschaltverlustenergieproPuls<br>Turn-onenergylossperpulse|IC= 600 A, VCE= 900 V, LS= 35 nH<br>VGE= ±15 V, di/dt = 6500 A/µs (Tvj= 150°C)<br>RGon= 1,0Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Eon||140<br>210<br>225||mJ<br>mJ<br>mJ|
|AbschaltverlustenergieproPuls<br>Turn-offenergylossperpulse|IC= 600 A, VCE= 900 V, LS= 35 nH<br>VGE= ±15 V, du/dt = 3000 V/µs (Tvj= 150°C)<br>RGoff= 1,0Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Eoff||115<br>180<br>205||mJ<br>mJ<br>mJ|
|Kurzschlußverhalten<br>SCdata|VGE ≤15 V, VCC= 1000 V<br>VCEmax= VCES-LsCE·di/dt<br>Tvj= 25°C<br>Tvj= 150°C<br>tP ≤10 µs,<br>tP ≤10 µs,|ISC||3000<br>2300||A<br>A|
|Wärmewiderstand,ChipbisGehäuse<br>Thermalresistance,junctiontocase|proIGBT/perIGBT|RthJC|||0,0369|K/W|
|Wärmewiderstand,GehäusebisKühlkörper<br>Thermalresistance,casetoheatsink|proIGBT/perIGBT<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)|RthCH||0,0328||K/W|
|TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions||Tvj op|-40||150|°C|



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FF600R17ME4 

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## **Diode,�Wechselrichter�/�Diode,�Inverter** 

## **Höchstzulässige�Werte�/�Maximum�Rated�Values** 

|PeriodischeSpitzensperrspannung<br>Repetitivepeakreversevoltage|Tvj= 25°C|VRRM|1700|1700|1700|V|
|---|---|---|---|---|---|---|
|Dauergleichstrom<br>ContinuousDCforwardcurrent||IF|600|||A|
|PeriodischerSpitzenstrom<br>Repetitivepeakforwardcurrent|tP= 1 ms|IFRM|1200|||A|
|Grenzlastintegral<br>I²t-value|VR= 0 V, tP= 10 ms, Tvj= 125°C<br>VR= 0 V, tP= 10 ms, Tvj= 150°C|I²t|32000<br>30500<br>|||A²s<br>A²s|
|**CharakteristischeWerte/CharacteristicValues**|||min.|typ.|max.||
|Durchlassspannung<br>Forwardvoltage|IF= 600 A, VGE= 0 V<br>IF= 600 A, VGE= 0 V<br>IF= 600 A, VGE= 0 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|VF||1,80<br>1,90<br>1,95|2,20|V<br>V<br>V|
|Rückstromspitze<br>Peakreverserecoverycurrent|IF= 600 A, - diF/dt = 6500 A/µs (Tvj=150°C)<br>VR= 900 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|IRM||580<br>650<br>670||A<br>A<br>A|
|Sperrverzögerungsladung<br>Recoveredcharge|IF= 600 A, - diF/dt = 6500 A/µs (Tvj=150°C)<br>VR= 900 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Qr||150<br>250<br>285||µC<br>µC<br>µC|
|AbschaltenergieproPuls<br>Reverserecoveryenergy|IF= 600 A, - diF/dt = 6500 A/µs (Tvj=150°C)<br>VR= 900 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Erec||75,0<br>145<br>165||mJ<br>mJ<br>mJ|
|Wärmewiderstand,ChipbisGehäuse<br>Thermalresistance,junctiontocase|proDiode/perdiode|RthJC|||0,0730|K/W|
|Wärmewiderstand,GehäusebisKühlkörper<br>Thermalresistance,casetoheatsink|proDiode/perdiode<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)|RthCH||0,0378||K/W|
|TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions||Tvj op|-40||150|°C|



## **NTC-Widerstand�/�NTC-Thermistor** 

## **Charakteristische�Werte�/�Characteristic�Values** 

|**NTC-Widerstand/NTC-Thermistor**<br>|**NTC-Widerstand/NTC-Thermistor**<br>||||||
|---|---|---|---|---|---|---|
|**CharakteristischeWerte/CharacteristicValues**|||min.|typ.|max.||
|Nennwiderstand<br>Ratedresistance|TNTC= 25°C|R25||5,00||kΩ|
|AbweichungvonR100<br>DeviationofR100|TNTC= 100°C, R100= 493Ω|∆R/R|-5||5|%|
|Verlustleistung<br>Powerdissipation|TNTC= 25°C|P25|||20,0|mW|
|B-Wert<br>B-value|R2= R25exp [B25/50(1/T2- 1/(298,15 K))]|B25/50||3375||K|
|B-Wert<br>B-value|R2= R25exp [B25/80(1/T2- 1/(298,15 K))]|B25/80||3411||K|
|B-Wert<br>B-value|R2= R25exp [B25/100(1/T2- 1/(298,15 K))]|B25/100||3433||K|



Angaben�gemäß�gültiger�Application�Note. Specification�according�to�the�valid�application�note. 

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FF600R17ME4 

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## **Modul�/�Module** 

|**Modul/Module**|||||||
|---|---|---|---|---|---|---|
|Isolations-Prüfspannung<br>Isolationtestvoltage|RMS, f = 50 Hz, t = 1 min.|VISOL|3,4<br>|||kV|
|MaterialModulgrundplatte<br>Materialofmodulebaseplate|||Cu||||
|InnereIsolation<br>Internalisolation|Basisisolierung(Schutzklasse1,EN61140)<br>basicinsulation(class1,IEC61140)||Al2O3||||
|Kriechstrecke<br>Creepagedistance|Kontakt-Kühlkörper/terminaltoheatsink<br>Kontakt-Kontakt/terminaltoterminal||14,5<br>13,0<br>|||mm|
|Luftstrecke<br>Clearance|Kontakt-Kühlkörper/terminaltoheatsink<br>Kontakt-Kontakt/terminaltoterminal||12,5<br>10,0<br>|||mm|
|VergleichszahlderKriechwegbildung<br>Comperativetrackingindex||CTI||> 200|||
||||min.|typ.|max.||
|Modulstreuinduktivität<br>Strayinductancemodule||LsCE||20||nH|
|Modulleitungswiderstand,Anschlüsse-<br>Chip<br>Moduleleadresistance,terminals-chip|TC=25°C,proSchalter/perswitch|RCC'+EE'||1,10||mΩ|
|Lagertemperatur<br>Storagetemperature||Tstg|-40||125|°C|
|Anzugsdrehmomentf.Modulmontage<br>Mountingtorqueformodulmounting|SchraubeM5-Montagegem.gültigerApplikationsschrift<br>ScrewM5-Mountingaccordingtovalidapplicationnote|M|3,00||6,00|Nm|
|Anzugsdrehmomentf.elektr.Anschlüsse<br>Terminalconnectiontorque|SchraubeM6-Montagegem.gültigerApplikationsschrift<br>ScrewM6-Mountingaccordingtovalidapplicationnote|M|3,0|-|6,0|Nm|
|Gewicht<br>Weight||G||345||g|



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Datasheet 

4 

FF600R17ME4 

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**Ausgangskennlinie�IGBT,Wechselrichter�(typisch) output�characteristic�IGBT,Inverter�(typical)** IC�=�f�(VCE) VGE�=�15�V 

**Ausgangskennlinienfeld�IGBT,Wechselrichter�(typisch) output�characteristic�IGBT,Inverter�(typical)** IC�=�f�(VCE) Tvj�=�150°C 

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**----- Start of picture text -----**<br>
1200 1200<br>Tvj = 25°C VGE = 20V<br>Tvj = 125°C VGE = 15V<br>Tvj = 150°C VGE = 12V<br>VGE = 10V<br>1000 1000 VGE = 9V<br>VGE = 8V<br>800 800<br>600 600<br>400 400<br>200 200<br>0 0<br>0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0<br>VCE [V] VCE [V]<br> [A]  [A]<br>IC IC<br>**----- End of picture text -----**<br>


**Übertragungscharakteristik�IGBT,Wechselrichter�(typisch) transfer�characteristic�IGBT,Inverter�(typical)** IC�=�f�(VGE) VCE�=�20�V 

## **Schaltverluste�IGBT,Wechselrichter�(typisch) switching�losses�IGBT,Inverter�(typical)** Eon�=�f�(IC),�Eoff�=�f�(IC) 

VGE�=�±15�V,�RGon�=�1� Ω ,�RGoff�=�1� Ω ,�VCE�=�900�V 

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**----- Start of picture text -----**<br>
1200 1000<br>Tvj = 25°C Eon, Tvj = 125°C<br>Tvj = 125°C Eon, Tvj = 150°C<br>Tvj = 150°C 900 E off , T vj  = 125°C<br>Eoff, Tvj = 150°C<br>1000<br>800<br>700<br>800<br>600<br>600 500<br>400<br>400<br>300<br>200<br>200<br>100<br>0 0<br>5 6 7 8 9 10 11 12 13 0 200 400 600 800 1000 1200<br>VGE [V] IC [A]<br> [A]<br>IC E [mJ]<br>**----- End of picture text -----**<br>


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Datasheet 

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FF600R17ME4 

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**----- Start of picture text -----**<br>
Eon =f(R),E G off =f(R G) ZthJC =f (t)<br>VGE =+15V,1 C =600A,V CE =900V<br>800 0,1 pot TT<br>Eon, Tvj = 125°C ZthJC : IGBT<br>Eon, Tvj = 150°C<br>700 EEoffoff, T, Tvjvj = 125°C = 150°C<br>-_<br>_<br>600 a<br>L o /AT<br>500 7<br>7<br>s<br>7<br>400 Zz 0,01<br>y,<br>300 Z y4y V,A<br>200<br>100 i: 1 2 3 4<br>ri[K/W]: 0,0017 0,00225 0,03078 0,00216<br>τ i[s]: 0,00053 0,00324 0,03234 8,13887<br>0 0,001<br>0 1 2 3 4 5 6 7 8 9 10 11 0,001 0,01 0,1 1 10<br>RG [ Ω ] t [s]<br> [K/W]<br>E [mJ]<br>thJC<br>Z<br>**----- End of picture text -----**<br>


## **(RBSOA)** 

> IF =f(V F) 

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**----- Start of picture text -----**<br>
IC =f(V CE)<br>VGE =415V,R Goff =1 Ω ,T vj =150°C<br>1400 1200<br>IC, Modul Tvj = 25°C<br>IC, Chip Tvj = 125°C<br>Tvj = 150°C<br>1200<br>1000<br>|<br>1000 LLL LLEL +!<br>800<br>800<br>600<br>600<br>400<br>400<br>200<br>200<br>ae<br>0 cr 0 “a|<br>0 200 400 600 800 1000 1200 1400 1600 1800 0,0 0,5 1,0 1,5 2,0 2,5 3,0<br>VCE  [V] VF [V]<br> [A]  [A]<br>IC IF<br>**----- End of picture text -----**<br>


6 

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FF600R17ME4 

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**----- Start of picture text -----**<br>
Erec =f il F) Erec =f(R G)<br>RGon =1 Ω ,V CE =900V IF =600A,V CE =900V<br>200 200 a<br>Erec, Tvj = 125°C Erec, Tvj = 125 ° C<br>Erec, Tvj = 150°C Erec, Tvj = 150°C<br>180 180<br>a<br>7<br>160 160<br>y, \N<br>140 7 140 ln IN XN \<br>120 120 NN | > “N<br>/<br>/<br>100 / 100<br>/<br>/<br>80 7 80<br>/<br>60 60<br>40 40<br>20 20<br>0 0<br>0 200 400 600 800 1000 1200 0 1 2 3 4 5 6 7 8 9 10 11<br>IF [A] RG [ Ω ]<br>E [mJ] E [mJ]<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
ZthJC = f (t) R=f(T)<br>0,1 100000<br>ZthJC : Diode Rtyp<br>i th a<br>a eee ————<br>10000<br>0,01<br>1000<br>i: 1 2 3 4<br>ri[K/W]: 0,0081 0,0526 0,00697 0,00531<br>τ i[s]: 0,00088 0,029 0,17225 5,18101<br>0,001 100<br>0,001 0,01 0,1 1 10 0 20 40 60 80 100 120 140 160<br>t [s] TNTC [°C]<br>] Ω<br> [K/W]<br>R[<br>thJC<br>Z<br>**----- End of picture text -----**<br>


Datasheet 

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FF600R17ME4 

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## **Schaltplan�/�Circuit�diagram** 

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## **Gehäuseabmessungen�/�Package�outlines** 

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**----- Start of picture text -----**<br>
Infineon<br>**----- End of picture text -----**<br>


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Datasheet 

## **WARNHINWEIS** 

## **WARNINGS**

Updated at April 28, 2026

Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.

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