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FF600R12ME7B11BPSA1
IGBT Module, Dual, 600 A, 1.5 V, 175 °C, Module
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- Manufacturer: INFINEON
- Product type: IGBT Modules
- SVHC: No SVHC (25-Jun-2025)
- Product Range: EconoDUAL 3
- IGBT Technology: IGBT7 [Trench Stop]
- IGBT Termination: Stud
- Power Dissipation: -
- IGBT Configuration: Dual
- Transistor Mounting: Panel
- DC Collector Current: 600A
- Power Dissipation Pd: -
- Transistor Case Style: Module
- Operating Temperature Max: 175°C
- Junction Temperature Tj Max: 175°C
- Continuous Collector Current: 600A
- Collector Emitter Voltage Max: 1.2kV
- Collector Emitter Voltage V(br)ceo: 1.2kV
- Collector Emitter Saturation Voltage: 1.5V
- Collector Emitter Saturation Voltage Vce(on): 1.5V
| Delivery and price | |
|---|---|
| Units per pack | 5 |
| Price | 241.82 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
**FF600R12ME7_B11 EconoDUAL[™] 3 module** ## **EconoDUAL[™] 3 module with TRENCHSTOP[™] IGBT7 and Emitter Controlled 7 diode and NTC** ## **Features** - Electrical features - VCES = 1200 V - IC nom = 600 A / ICRM = 1200 A - Integrated temperature sensor - TRENCHSTOP[TM] IGBT7 - VCEsat with positive temperature coefficient - Mechanical features - High power density - Isolated base plate - PressFIT contact technology - Standard housing ## **Potential applications** - Commercial Agriculture Vehicles - High power converters - Motor drives - Servo drives - UPS systems ## **Product validation** - Qualified for industrial applications according to the relevant tests of IEC 60747, 60749 and 60068 ## **Description** Please read the Important Notice and Warnings at the end of this document Datasheet **www.infineon.com** 1.00 2021-05-21 **FF600R12ME7_B11 EconoDUAL[™] 3 module** **==> picture [105 x 47] intentionally omitted <==** ## **Table of contents** ## **Table of contents** ||**Description**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1| |---|---| ||**Features**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1| ||**Potential applications**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1| ||**Product validation**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1| ||**Table of contents**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2| |**1**|**Package**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3| |**2**|**IGBT, Inverter**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3| |**3**|**Diode, Inverter**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5| |**4**|**NTC-Thermistor**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .6| |**5**|**Characteristics diagrams**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7| |**6**|**Circuit diagram**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11| |**7**|**Package outlines**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12| |**8**|**Module label code**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13| ||**Revision history**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14| ||**Disclaimer**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15| Datasheet 2 1.00 2021-05-21 **FF600R12ME7_B11 EconoDUAL[™] 3 module** **==> picture [105 x 47] intentionally omitted <==** ## **1 Package** ## **1 Package** |**1**<br>**Package**|**1**<br>**Package**|**1**<br>**Package**|**1**<br>**Package**|**1**<br>**Package**| |---|---|---|---|---| |**Table 1**<br>**Insulation coordination**||||| |**Parameter**|**Symbol**|**Note or test condition**|**Values**|**Unit**| |Isolation test voltage|_V_ISOL|RMS, f = 50 Hz,_t_= 1 min|3.4|kV| |Material of module<br>baseplate|||Cu|| |Internal Isolation||basic insulation (class 1, IEC 61140)|Al2O3|| |Creepage distance|_d_Creep|terminal to heatsink|14.5|mm| |Creepage distance|_d_Creep|terminal to terminal|13.0|mm| |Clearance|_d_Clear|terminal to heatsink|12.5|mm| |Clearance|_d_Clear|terminal to terminal|10.0|mm| |Comparative tracking index|_CTI_||> 200|| |RTI Elec.|_RTI_|housing|140|°C| |**Table 2**<br>**Characteristic values**|**Table 2**<br>**Characteristic values**|**Table 2**<br>**Characteristic values**|**Table 2**<br>**Characteristic values**||||| |---|---|---|---|---|---|---|---| |**Parameter**|**Symbol**|**Note or test condition**||**Values**|||**Unit**| |||||**Min.**|**Typ.**|**Max.**|| |Stray inductance module|_L_sCE||||20||nH| |Module lead resistance,<br>terminals - chip|_R_CC'+EE'|TC=25°C, per switch|||0.8||mΩ| |Storage temperature|_T_stg|||-40||125|°C| |Mounting torque for modul<br>mounting|_M_|- Mounting according to<br>valid application note|M5, Screw|3||6|Nm| |Terminal connection torque|_M_|- Mounting according to<br>valid application note|M6, Screw|3||6|Nm| |Weight|_G_||||345||g| ## **2 IGBT, Inverter** |**2**<br>**IGBT, Inverter**|**2**<br>**IGBT, Inverter**|**2**<br>**IGBT, Inverter**|**2**<br>**IGBT, Inverter**|**2**<br>**IGBT, Inverter**|**2**<br>**IGBT, Inverter**| |---|---|---|---|---|---| |**Table 3**<br>**Maximum rated values**|||||| |**Parameter**|**Symbol**|**Note or test condition**||**Values**|**Unit**| |Collector-emitter voltage|_V_CES||_T_vj= 25 °C|1200|V| |Continous DC collector<br>current|_I_CDC|_T_vj max= 175 °C|_T_C= 85 °C|600|A| |Repetitive peak collector<br>current|_I_CRM|_t_P= 1 ms||1200|A| |Gate-emitter peak voltage|_V_GES|||±20|V| Datasheet 3 1.00 2021-05-21 **FF600R12ME7_B11 EconoDUAL[™] 3 module** **==> picture [105 x 47] intentionally omitted <==** ## **2 IGBT, Inverter** ## **Characteristic values** ||||||||| |---|---|---|---|---|---|---|---| |**Table 4**<br>**Characteristic values**|||||||| |**Parameter**|**Symbol**|**Note or test condition**||**Values**|||**Unit**| |||||**Min.**|**Typ.**|**Max.**|| |Collector-emitter saturation<br>voltage|_V_CE sat|_I_C= 600 A,_V_GE= 15 V|_T_vj= 25 °C||1.50|1.75|V| ||||_T_vj= 125 °C||1.65||| ||||_T_vj= 175 °C||1.75||| |Gate threshold voltage|_V_GEth|_I_C= 12 mA, VCE= VGE,_T_vj=|25 °C|5.15|5.80|6.45|V| |Gate charge|_Q_G|_V_GE= ±15 V,_V_CE= 600 V|||9.6||µC| |Internal gate resistor|_R_Gint|_T_vj= 25 °C|||0.56||Ω| |Input capacitance|_C_ies|_f_= 100 kHz,_T_vj= 25 °C,_V_CE= 25 V,_V_GE= 0 V|||92||nF| |Reverse transfer capacitance|_C_res|_f_= 100 kHz,_T_vj= 25 °C,_V_CE= 25 V,_V_GE= 0 V|||0.46||nF| |Collector-emitter cut-of<br>current|_I_CES|_V_CE= 1200 V,_V_GE= 0 V|_T_vj= 25 °C|||35|µA| |Gate-emitter leakage current|_I_GES|_V_CE= 0 V,_V_GE= 20 V,_T_vj= 25 °C||||100|nA| |Turn-on delay time<br>(inductive load)|_t_don|_I_C= 600 A,_V_CE= 600 V,<br>_V_GE= ±15 V,_R_Gon= 0.51 Ω|_T_vj= 25 °C||0.250||µs| ||||_T_vj= 125 °C||0.270||| ||||_T_vj= 175 °C||0.290||| |Rise time (inductive load)|_t_r|_I_C= 600 A,_V_CE= 600 V,<br>_V_GE= ±15 V,_R_Gon= 0.51 Ω|_T_vj= 25 °C||0.065||µs| ||||_T_vj= 125 °C||0.072||| ||||_T_vj= 175 °C||0.074||| |Turn-of delay time<br>(inductive load)|_t_dof|_I_C= 600 A,_V_CE= 600 V,<br>_V_GE= ±15 V,<br>_R_Gof= 0.51 Ω|_T_vj= 25 °C||0.420||µs| ||||_T_vj= 125 °C||0.500||| ||||_T_vj= 175 °C||0.540||| |Fall time (inductive load)|_t_f|_I_C= 600 A,_V_CE= 600 V,<br>_V_GE= ±15 V,<br>_R_Gof= 0.51 Ω|_T_vj= 25 °C||0.125||µs| ||||_T_vj= 125 °C||0.270||| ||||_T_vj= 175 °C||0.370||| |Turn-on energy loss per<br>pulse|_E_on|_I_C= 600 A,_V_CE= 600 V,<br>_L_σ= 25 nH,_V_GE= ±15 V,<br>_R_Gon= 0.51 Ω, di/dt =<br>7800 A/µs (Tvj= 175 °C)|_T_vj= 25 °C||24||mJ| ||||_T_vj= 125 °C||43||| ||||_T_vj= 175 °C||58||| |Turn-of energy loss per<br>pulse|_E_of|_I_C= 600 A,_V_CE= 600 V,<br>_L_σ= 25 nH,_V_GE= ±15 V,<br>_R_Gof= 0.51 Ω, dv/dt =<br>3100 V/µs (Tvj= 175 °C)|_T_vj= 25 °C||50.5||mJ| ||||_T_vj= 125 °C||77||| ||||_T_vj= 175 °C||95.5||| |SC data|_I_SC|_V_GE≤ 15 V,_V_CC= 800 V,<br>VCEmax=VCES-LsCE*di/dt|_t_P≤ 8 µs,_T_vj≤<br>150 °C||2500||A| ||||_t_P≤ 6 µs,_T_vj≤<br>175 °C||2400||| Datasheet 1.00 4 2021-05-21 **FF600R12ME7_B11 EconoDUAL[™] 3 module** **==> picture [105 x 47] intentionally omitted <==** ## **3 Diode, Inverter** ## **Characteristic values (continued)** |||||||| |---|---|---|---|---|---|---| |**Table 4**<br>**Characteristic values (continued)**||||||| |**Parameter**|**Symbol**|**Note or test condition**|**Values**|||**Unit**| ||||**Min.**|**Typ.**|**Max.**|| |Thermal resistance, junction<br>to case|_R_thJC|per IGBT|||0.0721|K/W| |Thermal resistance, case to<br>heatsink|_R_thCH|per IGBT,λgrease= 1 W/(m*K)||0.0193||K/W| |Temperature under<br>switching conditions|_T_vj op||-40||175|°C| _Note: Tvj op > 150°C is allowed for operation at overload conditions. For detailed specifications, please refer to AN 2018-14._ ## **3 Diode, Inverter** |**3**<br>**Diode, Inverter**|**3**<br>**Diode, Inverter**|**3**<br>**Diode, Inverter**|||| |---|---|---|---|---|---| |**Table 5**<br>**Maximum rated values**|||||| |**Parameter**|**Symbol**|**Note or test condition**||**Values**|**Unit**| |Repetitive peak reverse<br>voltage|_V_RRM||_T_vj= 25 °C|1200|V| |Continous DC forward<br>current|_I_F|||600|A| |Repetitive peak forward<br>current|_I_FRM|_t_P= 1 ms||1200|A| |I2t - value|_I_2_t_|_t_P= 10 ms,_V_R= 0 V|_T_vj= 125 °C|28300|A²s| ||||_T_vj= 175 °C|26000|| **Table 6 Characteristic values** |**Parameter**|**Symbol**|**Note or test condition**||**Values**|**Values**|**Values**|**Unit**| |---|---|---|---|---|---|---|---| |||||**Min.**|**Typ.**|**Max.**|| |Forward voltage|_V_F|_I_F= 600 A,_V_GE= 0 V|_T_vj= 25 °C||1.80|2.10|V| ||||_T_vj= 125 °C||1.70||| ||||_T_vj= 175 °C||1.60||| |Peak reverse recovery<br>current|_I_RM|_V_R= 600 V,_I_F= 600 A,<br>_V_GE= -15 V, -diF/dt =<br>7800 A/µs (Tvj= 175 °C)|_T_vj= 25 °C||400||A| ||||_T_vj= 125 °C||550||| ||||_T_vj= 175 °C||625||| |Recovered charge|_Q_r|_V_R= 600 V,_I_F= 600 A,<br>_V_GE= -15 V, -diF/dt =<br>7800 A/µs (Tvj= 175 °C)|_T_vj= 25 °C||38||µC| ||||_T_vj= 125 °C||79.5||| ||||_T_vj= 175 °C||108||| Datasheet 1.00 5 2021-05-21 **FF600R12ME7_B11 EconoDUAL[™] 3 module** **==> picture [105 x 47] intentionally omitted <==** ## **4 NTC-Thermistor** |**Table 6**<br>**Characteristic values (continued)**|**Table 6**<br>**Characteristic values (continued)**|**Table 6**<br>**Characteristic values (continued)**|||||| |---|---|---|---|---|---|---|---| |**Parameter**|**Symbol**|**Note or test condition**||**Values**|||**Unit**| |||||**Min.**|**Typ.**|**Max.**|| |Reverse recovery energy|_E_rec|_V_R= 600 V,_I_F= 600 A,<br>_V_GE= -15 V, -diF/dt =<br>7800 A/µs (Tvj= 175 °C)|_T_vj= 25 °C||19||mJ| ||||_T_vj= 125 °C||39||| ||||_T_vj= 175 °C||53||| |Thermal resistance, junction<br>to case|_R_thJC|per diode||||0.141|K/W| |Thermal resistance, case to<br>heatsink|_R_thCH|per diode,λgrease= 1 W/(m*K)|||0.0230||K/W| |Temperature under<br>switching conditions|_T_vj op|||-40||175|°C| _Note: Tvj op > 150°C is allowed for operation at overload conditions. For detailed specifications, please refer to AN 2018-14._ ## **4 NTC-Thermistor** |**4**<br>**NTC-Thermistor**|**4**<br>**NTC-Thermistor**|**4**<br>**NTC-Thermistor**||||| |---|---|---|---|---|---|---| |**Table 7**<br>**Characteristic values**||||||| |**Parameter**|**Symbol**|**Note or test condition**|**Values**|||**Unit**| ||||**Min.**|**Typ.**|**Max.**|| |Rated resistance|_R_25|_T_NTC= 25 °C||5||kΩ| |Deviation of R100|_ΔR/R_|_T_NTC= 100 °C,_R_100= 493 Ω|-5||5|%| |Power dissipation|_P_25|_T_NTC= 25 °C|||20|mW| |B-value|_B_25/50|R2= R25exp[B25/50(1/T2-1/(298,15 K))]||3375||K| |B-value|_B_25/80|R2= R25exp[B25/80(1/T2-1/(298,15 K))]||3411||K| |B-value|_B_25/100|R2= R25exp[B25/100(1/T2-1/(298,15 K))]||3433||K| _Note: Specification according to the valid application note._ Datasheet 6 1.00 2021-05-21 **FF600R12ME7_B11 EconoDUAL[™] 3 module** **==> picture [105 x 47] intentionally omitted <==** ## **5 Characteristics diagrams** ## **5 Characteristics diagrams** **==> picture [539 x 356] intentionally omitted <==** **----- Start of picture text -----**<br> output characteristic (typical), IGBT, Inverter output characteristic (typical), IGBT, Inverter<br>IC = f(VCE) IC = f(VCE)<br>VGE = 15 V Tvj = 175 °C<br>1200 1200<br>1100 1100<br>1000 1000<br>900 900<br>800 800<br>700 700<br>600 600<br>500 500<br>400 400<br>300 300<br>200 200<br>100 100<br>0 0<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0<br>transfer characteristic (typical), IGBT, Inverter switching losses (typical), IGBT, Inverter<br>IC = f(VGE) E = f(IC)<br>VCE = 20 V RGoff = 0.51 Ω, RGon = 0.51 Ω, VCE = 600 V, VGE = ± 15 V<br>**----- End of picture text -----**<br> **==> picture [539 x 262] intentionally omitted <==** **----- Start of picture text -----**<br> 1200 350<br>1100<br>300<br>1000<br>900<br>250<br>800<br>700 200<br>600<br>500 150<br>400<br>100<br>300<br>200<br>50<br>100<br>0 0<br>5 6 7 8 9 10 11 12 13 0 200 400 600 800 1000 1200<br>**----- End of picture text -----**<br> Datasheet 1.00 2021-05-21 7 **FF600R12ME7_B11 EconoDUAL[™] 3 module** **==> picture [105 x 47] intentionally omitted <==** ## **5 Characteristics diagrams** ## **switching losses (typical), IGBT, Inverter** ## E = f(RG) ## **transient thermal impedance , IGBT, Inverter** Zth = f(t) IC = 600 A, VCE = 600 V, VGE = ± 15 V **==> picture [228 x 253] intentionally omitted <==** **----- Start of picture text -----**<br> 250<br>225<br>200<br>175<br>150<br>125<br>100<br>75<br>50<br>25<br>0<br>0 1 2 3 4 5 6<br>**----- End of picture text -----**<br> ## **reverse bias safe operating area (RBSOA), IGBT, Inverter** ## IC = f(VCE) RGoff = 0.51 Ω, VGE = ±15 V, Tvj = 175 °C **==> picture [228 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 1300<br>1200<br>1100<br>1000<br>900<br>800<br>700<br>600<br>500<br>400<br>300<br>200<br>100<br>0<br>0 200 400 600 800 1000 1200 1400<br>**----- End of picture text -----**<br> **==> picture [229 x 253] intentionally omitted <==** **----- Start of picture text -----**<br> 1<br>0.1<br>0.01<br>0.001<br>0.001 0.01 0.1 1 10<br>**----- End of picture text -----**<br> ## **Switching times (typical), IGBT, Inverter** t = f(IC) RGoff = 0.51 Ω, RGon = 0.51 Ω, VCE = 600 V, VGE = ± 15 V, Tvj = 175 °C **==> picture [229 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 10<br>1<br>0.1<br>0.01<br>0 200 400 600 800 1000 1200<br>**----- End of picture text -----**<br> Datasheet 8 1.00 2021-05-21 **FF600R12ME7_B11 EconoDUAL[™] 3 module** **==> picture [105 x 47] intentionally omitted <==** ## **5 Characteristics diagrams** ## **Switching times (typical), IGBT, Inverter** t = f(RG) IC = 600 A, VCE = 600 V, VGE = ± 15 V, Tvj = 175 °C **==> picture [228 x 253] intentionally omitted <==** **----- Start of picture text -----**<br> 10<br>1<br>0.1<br>0.01<br>0 1 2 3 4 5 6<br>**----- End of picture text -----**<br> **gate charge characteristic (typical), IGBT, Inverter** VGE = f(QG) IC = 600 A, Tvj = 25 °C **==> picture [228 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 15<br>12<br>9<br>6<br>3<br>0<br>-3<br>-6<br>-9<br>-12<br>-15<br>0 1 2 3 4 5 6 7 8 9 10<br>**----- End of picture text -----**<br> ## **capacity characteristic (typical), IGBT, Inverter** C = f(VCE) f = 100 kHz, VGE = 0 V, Tvj = 25 °C **==> picture [229 x 253] intentionally omitted <==** **----- Start of picture text -----**<br> 1000<br>100<br>10<br>1<br>0.1<br>0.01<br>0 10 20 30 40 50 60 70 80 90 100<br>**----- End of picture text -----**<br> **forward characteristic of (typical), Diode, Inverter** IF = f(VF) **==> picture [229 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 1200<br>1100<br>1000<br>900<br>800<br>700<br>600<br>500<br>400<br>300<br>200<br>100<br>0<br>0.0 0.5 1.0 1.5 2.0 2.5<br>**----- End of picture text -----**<br> Datasheet 9 1.00 2021-05-21 **FF600R12ME7_B11 EconoDUAL[™] 3 module** **==> picture [105 x 47] intentionally omitted <==** ## **5 Characteristics diagrams** ## **switching losses (typical), Diode, Inverter** Erec = f(IF) VCE = 600 V, RGon = RGon(IGBT) ## **switching losses (typical), Diode, Inverter** Erec = f(RG) VCE = 600 V, IF = 600 A **==> picture [539 x 557] intentionally omitted <==** **----- Start of picture text -----**<br> 80 80<br>70 70<br>60 60<br>50 50<br>40 40<br>30 30<br>20 20<br>10 10<br>0 0<br>0 200 400 600 800 1000 1200 0 1 2 3 4 5 6<br>transient thermal impedance , Diode, Inverter temperature characteristic (typical), NTC-Thermistor<br>Zth = f(t) R = f(TNTC)<br>1 100000<br>10000<br>0.1<br>1000<br>0.01<br>100<br>0.001 10<br>0.001 0.01 0.1 1 10 0 25 50 75 100 125 150 175<br>**----- End of picture text -----**<br> Datasheet 10 1.00 2021-05-21 **FF600R12ME7_B11 EconoDUAL[™] 3 module** **==> picture [105 x 47] intentionally omitted <==** ## **6 Circuit diagram** **==> picture [167 x 14] intentionally omitted <==** **----- Start of picture text -----**<br> 6 Circuit diagram<br>**----- End of picture text -----**<br> **==> picture [528 x 519] intentionally omitted <==** **Figure 2** Datasheet 1.00 2021-05-21 11 **FF600R12ME7_B11 EconoDUAL[™] 3 module** **==> picture [105 x 47] intentionally omitted <==** ## **7 Package outlines** **==> picture [541 x 563] intentionally omitted <==** **----- Start of picture text -----**<br> 7 Package outlines<br>In fin e o n<br>**----- End of picture text -----**<br> **Figure 3** Datasheet 12 1.00 2021-05-21 **FF600R12ME7_B11 EconoDUAL[™] 3 module** **8 Module label code** **==> picture [105 x 47] intentionally omitted <==** ## **8 Module label code** |**Module label code**|**Module label code**|**Module label code**|**Module label code**|**Module label code**| |---|---|---|---|---| |Code format|Data Matrix||Barcode Code128|| |Encoding|ASCII text||Code Set A|| |Symbol size|16x16||23 digits|| |Standard|IEC24720 and IEC16022||IEC8859-1|| |||||| |Code content|_Content_<br>Module serial number<br>Module material number<br>Production order number<br>Date code (production year)<br>Date code (production week)|_Digit_<br>1 – 5<br>6 - 11<br>12 - 19<br>20 – 21<br>22 – 23||_Example_<br>71549<br>142846<br>55054991<br>15<br>30| |Example|71549142846550549911530<br>71549142846550549911530|||| ## **Figure 4** Datasheet 13 1.00 2021-05-21 **FF600R12ME7_B11 EconoDUAL[™] 3 module** **==> picture [105 x 47] intentionally omitted <==** ## **Revision history** ## **Revision history** |**Revision history**||| |---|---|---| |**Document revision**|**Date of release**|**Description of changes**| |V1.0|2019-10-08|Target datasheet| |0.10|2020-11-24|Target datasheet| |0.11|2021-04-08|Preliminary datasheet| |0.12|2021-04-15|Preliminary datasheet| |1.00|2021-05-21|Final datasheet| Datasheet 1.00 2021-05-21 14 ## **Trademarks** All referenced product or service names and trademarks are the property of their respective owners. **Edition 2021-05-21 IMPORTANT NOTICE Published by** The information given in this document shall in no event be regarded as a guarantee of conditions or **Infineon Technologies AG** characteristics (“Beschaffenheitsgarantie”). **81726 Munich, Germany** With respect to any examples, hints or any typical values stated herein and/or any information regarding **© 2021 Infineon Technologies AG** the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities **All Rights Reserved.** of any kind, including without limitation warranties of non-infringement of intellectual property rights of any **Do you have a question about any** third party. **aspect of this document?** In addition, any information given in this document is **Email: erratum@infineon.com** subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning **Document reference** customer’s products and any use of the product of **IFX-AAY183-003** Infineon Technologies in customer’s applications. Please note that this product is not qualified according to the AEC Q100 or AEC Q101 documents of the Automotive Electronics Council. ## **WARNINGS** Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application.
Updated at April 28, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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