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FF600R12ME4AB11BPSA1
IGBT Module, Dual, 995 A, 1.75 V, 4.05 kW, 150 °C, Module
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: INFINEON
- Product type: IGBT Modules
- Available until stocks are exhausted
- SVHC: No SVHC (27-Jun-2018)
- Product Range: EconoDUAL 3
- IGBT Technology: IGBT 4 [Trench/Field Stop]
- IGBT Termination: Press Fit
- Power Dissipation: 4.05kW
- IGBT Configuration: Dual
- Transistor Mounting: Panel
- DC Collector Current: 995A
- Power Dissipation Pd: 4.05kW
- Transistor Case Style: Module
- Operating Temperature Max: 150°C
- Junction Temperature Tj Max: 150°C
- Continuous Collector Current: 995A
- Collector Emitter Voltage Max: 1.2kV
- Collector Emitter Voltage V(br)ceo: 1.2kV
- Collector Emitter Saturation Voltage: 1.75V
- Collector Emitter Saturation Voltage Vce(on): 1.75V
| Delivery and price | |
|---|---|
| Units per pack | 5 |
| Price | 182.98 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
IGBT-Module IGBT-modules ## FF600R12ME4_B11 VCES = 1200V IC nom = 600A / ICRM = 1200A - Hochleistungsumrichter - • Motorantriebe - Servoumrichter - USV-Systeme - • Windgeneratoren - - - - - - CEsat - • T yjop = 150°C • VCEsat mit - CEsat - • T - VCEsat - - - Standardgehäuse - - - 1 ## Technische�Information�/�Technical�Information IGBT-Module IGBT-modules FF600R12ME4_B11 **==> picture [86 x 38] intentionally omitted <==** ## **Vorläufige�Daten Preliminary�Data** ## **IGBT,Wechselrichter�/�IGBT,Inverter Höchstzulässige�Werte�/�Maximum�Rated�Values** |TechnischeInformation/TechnicalInformation<br>FF600R12ME4_B11<br>IGBT-Module<br>IGBT-modules|| |---|---| |preparedby:CU<br>approvedby:MK<br>dateofpublication:2013-11-05<br>revision:2.1<br>**VorläufigeDaten**<br>**PreliminaryData**<br>**IGBT,Wechselrichter/IGBT,Inverter**<br>**HöchstzulässigeWerte/MaximumRatedValues**<br>Kollektor-Emitter-Sperrspannung<br>Collector-emittervoltage<br>Tvj= 25°C<br>VCES<br>1200<br>V<br>Kollektor-Dauergleichstrom<br>ContinuousDCcollectorcurrent<br>TC= 100°C, Tvj max= 175°C<br>TC= 25°C, Tvj max= 175°C<br>IC nom<br>IC<br>600<br>995<br>A<br>A<br>PeriodischerKollektor-Spitzenstrom<br>Repetitivepeakcollectorcurrent<br>tP= 1 ms<br>ICRM<br>1200<br>A<br>Gesamt-Verlustleistung<br>Totalpowerdissipation<br>TC= 25°C, Tvj max= 175°C<br>Ptot<br>4050<br>W<br>Gate-Emitter-Spitzenspannung<br>Gate-emitterpeakvoltage<br>VGES<br>+/-20<br>V<br>**CharakteristischeWerte/CharacteristicValues**<br>min.<br>typ.<br>max.<br>Kollektor-Emitter-Sättigungsspannung<br>Collector-emittersaturationvoltage<br>IC= 600 A, VGE= 15 V<br>IC= 600 A, VGE= 15 V<br>IC= 600 A, VGE= 15 V<br>VCE sat<br>1,75<br>2,00<br>2,05<br>2,10<br>V<br>V<br>V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Gate-Schwellenspannung<br>Gatethresholdvoltage<br>IC= 23,0 mA, VCE= VGE, Tvj= 25°C<br>VGEth<br>5,2<br>5,8<br>6,4<br>V<br>Gateladung<br>Gatecharge<br>VGE= -15 V ... +15 V<br>QG<br>4,40<br>µC<br>InternerGatewiderstand<br>Internalgateresistor<br>Tvj= 25°C<br>RGint<br>1,2<br>Ω<br>Eingangskapazität<br>Inputcapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cies<br>37,0<br>nF<br>Rückwirkungskapazität<br>Reversetransfercapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cres<br>2,05<br>nF<br>Kollektor-Emitter-Reststrom<br>Collector-emittercut-offcurrent<br>VCE= 1200 V, VGE= 0 V, Tvj= 25°C<br>ICES<br>3,0<br>mA<br>Gate-Emitter-Reststrom<br>Gate-emitterleakagecurrent<br>VCE= 0 V, VGE= 20 V, Tvj= 25°C<br>IGES<br>400<br>nA<br>Einschaltverzögerungszeit,induktiveLast<br>Turn-ondelaytime,inductiveload<br>IC= 600 A, VCE= 600 V<br>VGE= ±15 V<br>RGon= 1,5Ω<br>td on<br>0,16<br>0,21<br>0,21<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Anstiegszeit,induktiveLast<br>Risetime,inductiveload<br>IC= 600 A, VCE= 600 V<br>VGE= ±15 V<br>RGon= 1,5Ω<br>tr<br>0,09<br>0,09<br>0,10<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Abschaltverzögerungszeit,induktiveLast<br>Turn-offdelaytime,inductiveload<br>IC= 600 A, VCE= 600 V<br>VGE= ±15 V<br>RGoff= 1,5Ω<br>td off<br>0,48<br>0,61<br>0,65<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Fallzeit,induktiveLast<br>Falltime,inductiveload<br>IC= 600 A, VCE= 600 V<br>VGE= ±15 V<br>RGoff= 1,5Ω<br>tf<br>0,07<br>0,11<br>0,12<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>EinschaltverlustenergieproPuls<br>Turn-onenergylossperpulse<br>IC= 600 A, VCE= 600 V, LS= 35 nH<br>VGE= ±15 V, di/dt = 5100 A/µs (Tvj= 150°C)<br>RGon= 1,5Ω<br>Eon<br>62,5<br>83,0<br>90,0<br>mJ<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>AbschaltverlustenergieproPuls<br>Turn-offenergylossperpulse<br>IC= 600 A, VCE= 600 V, LS= 35 nH<br>VGE= ±15 V, du/dt = 3700 V/µs (Tvj= 150°C)<br>RGoff= 1,5Ω<br>Eoff<br>47,0<br>72,0<br>79,5<br>mJ<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Kurzschlußverhalten<br>SCdata<br>VGE ≤15 V, VCC= 800 V<br>VCEmax= VCES-LsCE·di/dt<br>ISC<br>2400<br>A<br>Tvj= 150°C<br>tP ≤10 µs,<br>Wärmewiderstand,ChipbisGehäuse<br>Thermalresistance,junctiontocase<br>proIGBT/perIGBT<br>RthJC<br>0,037 K/W<br>Wärmewiderstand,GehäusebisKühlkörper<br>Thermalresistance,casetoheatsink<br>proIGBT/perIGBT<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)<br>RthCH<br>0,035<br>K/W<br>TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions<br>Tvj op<br>-40<br>150<br>°C|| 2 ## Technische�Information�/�Technical�Information IGBT-Module IGBT-modules FF600R12ME4_B11 **==> picture [86 x 38] intentionally omitted <==** **Vorläufige�Daten Preliminary�Data** ## **Diode,�Wechselrichter�/�Diode,�Inverter** ## **Höchstzulässige�Werte�/�Maximum�Rated�Values** |PeriodischeSpitzensperrspannung<br>Repetitivepeakreversevoltage|Tvj= 25°C|VRRM|1200|V| |---|---|---|---|---| |Dauergleichstrom<br>ContinuousDCforwardcurrent||IF|600|A| |PeriodischerSpitzenstrom<br>Repetitivepeakforwardcurrent|tP= 1 ms|IFRM|1200|A| |Grenzlastintegral<br>I²t-value|VR= 0 V, tP= 10 ms, Tvj= 125°C<br>VR= 0 V, tP= 10 ms, Tvj= 150°C|I²t|40000<br>37500<br>|A²s<br>A²s| ## **Charakteristische�Werte�/�Characteristic�Values** |||||||| |---|---|---|---|---|---|---| |**CharakteristischeWerte/CharacteristicValues**|||min.|typ.|max.|| |Durchlassspannung<br>Forwardvoltage|IF= 600 A, VGE= 0 V<br>IF= 600 A, VGE= 0 V<br>IF= 600 A, VGE= 0 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|VF||1,65<br>1,65<br>1,65|2,10|V<br>V<br>V| |Rückstromspitze<br>Peakreverserecoverycurrent|IF= 600 A, - diF/dt = 5100 A/µs (Tvj=150°C)<br>VR= 600 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|IRM||290<br>420<br>450||A<br>A<br>A| |Sperrverzögerungsladung<br>Recoveredcharge|IF= 600 A, - diF/dt = 5100 A/µs (Tvj=150°C)<br>VR= 600 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Qr||62,0<br>115<br>130||µC<br>µC<br>µC| |AbschaltenergieproPuls<br>Reverserecoveryenergy|IF= 600 A, - diF/dt = 5100 A/µs (Tvj=150°C)<br>VR= 600 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Erec||22,0<br>44,0<br>51,0||mJ<br>mJ<br>mJ| |Wärmewiderstand,ChipbisGehäuse<br>Thermalresistance,junctiontocase|proDiode/perdiode|RthJC|||0,065|K/W| |Wärmewiderstand,GehäusebisKühlkörper<br>Thermalresistance,casetoheatsink|proDiode/perdiode<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)|RthCH||0,039||K/W| |TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions||Tvj op|-40||150|°C| ## **NTC-Widerstand�/�NTC-Thermistor** ## **Charakteristische�Werte�/�Characteristic�Values** |**NTC-Widerstand/NTC-Thermistor**<br>|**NTC-Widerstand/NTC-Thermistor**<br>|||||| |---|---|---|---|---|---|---| |**CharakteristischeWerte/CharacteristicValues**|||min.<br>typ.||max.|| |Nennwiderstand<br>Ratedresistance|TC= 25°C|R25||5,00||kΩ| |AbweichungvonR100<br>DeviationofR100|TC= 100°C, R100= 493Ω|∆R/R|-5||5|%| |Verlustleistung<br>Powerdissipation|TC= 25°C|P25|||20,0|mW| |B-Wert<br>B-value|R2= R25exp [B25/50(1/T2- 1/(298,15 K))]|B25/50||3375||K| |B-Wert<br>B-value|R2= R25exp [B25/80(1/T2- 1/(298,15 K))]|B25/80||3411||K| |B-Wert<br>B-value|R2= R25exp [B25/100(1/T2- 1/(298,15 K))]|B25/100||3433||K| Angaben�gemäß�gültiger�Application�Note. Specification�according�to�the�valid�application�note. prepared�by:�CU date�of�publication:�2013-11-05 approved�by:�MK revision:�2.1 3 IGBT-Module IGBT-modules ## FF600R12ME4_B11 |Modul / Module||||||| |---|---|---|---|---|---|---| |Isolations-Prüfspannung<br>~~Isolation test voltage~~<br>Material Modulgrundplatte<br>Material of module baseplate|RMS, f = 50 Hz, t = 1 min<br>~~ee ~~|VISOL<br> ~~ee~~||2,5<br>Cu||kV| |Innere Isolation<br>Internal isolation|Basisisolierung (Schutzklasse 1, EN61140)<br>basic insulation (class 1, IEC 61140)|||Al2O3||| |Kriechstrecke<br>Creepage distance|Kontakt - Kuhlk6rper / terminal to heatsink<br>Kontakt - Kontakt / terminal to terminal|||14,5<br>13,0||mm| |Luftstrecke<br>Clearance|Kontakt - Kuhlkorper / terminal to heatsink<br>Kontakt - Kontakt / terminal to terminal|||12,5<br>10,0||mm| |Vergleichszahl der Kriechwegbildung<br>Comperative tracking index||CTI||> 200||| ||||min.|typ.|max.|| |Warmewiderstand, Gehause bis Kuhlk6rper| <br>Thermal resistance, case to heatsink|Paste<br>grease<br> pro Modul / per module<br>= 1 W/(m-k)/<br>= 1 W/(m-k)|RthCH||0,009||K/W| |Modulstreuinduktivität<br>~~Stray inductance module~~<br>Modulleitungswiderstand, Anschlusse -|~~ee ~~|LsCE<br> ~~ee ee~~|20<br>~~ee~~|||nH| |Chip|TC<br>= 25°C, pro Schalter / per switch|RCC'+EE'||1,00||mΩ| |Module lead resistance, terminals - chip||||||| |Lagertemperatur<br>~~Storage temperature~~<br>Anzugsdrehmoment f. Modulmontage<br>Mounting torque for modul mounting|~~ee ~~<br>Schraube M5<br>- Montage gem. giltiger Applikationsschrift<br>Screw M5<br>- Mounting according to valid application note|Tstg<br>M<br> ~~ee ee~~|-40<br>125<br>3,00<br>-<br>6,00<br>~~ee~~|||°C<br>Nm| |Anzugsdrehmoment f. elektr. Anschllsse<br>Terminal connection torque||Schraube M6<br>- Montage gem. gultiger Applikationsschrift<br>Screw M6<br>- Mounting according to valid application note|M|3,0|-|6,0|Nm| |Gewicht<br>Weight||G||345||g| 4 IGBT-Module IGBT-modules ## FF600R12ME4_B11 **==> picture [489 x 596] intentionally omitted <==** **----- Start of picture text -----**<br> IC =f(V CE) IC =f(V CE)<br>VGE =15V Tvj = 150°C<br>1200 a | , 7 1200 es|<br>Tvj = 25°C a ra VGE = 19V 7<br>Tvj = 125°C VGE = 17V<br>Tvj = 150°C VGE = 15V<br>1000 1000 VGE = 13V<br>VGE = 11V<br>Ae VGE = 9V : / /<br>800 800<br>fe / : a °<br>Me / : / /.<br>600 600<br>7, vA |<br>J<br>400 400<br>/<br>a<br>200 200<br>0 0<br>0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0<br>VCE [V] VCE [V]<br>Ubertragungscharakteristik IGBT,Wechselrichter (typisch) Schaltverluste IGBT,Wechselrichter (typisch)<br>transfer characteristic IGBT,Inverter (typical) switching losses IGBT,Inverter (typical)<br>IC =f(V GE) Eon =f(l),E C off =f(I C)<br>VCE =20V VGE =415V,R Gon =15 Ω ,R Goff =1.5 Ω ,V CE =600V<br>1200 400<br>Tvj = 25°C Eon, Tvj = 125°C<br>Tvj = 125°C Eon, Tvj = 150°C<br>Tvj = 150°C 350 Eoff, Tvj = 125°C<br>1000 Eoff, Tvj = 150°C<br>300<br>800<br>250<br>600 200<br>150 Ze<br>400<br>100<br>ff Po ee<br>200<br>50<br>0 0<br>5 6 7 8 9 10 11 12 13 0 200 400 600 800 1000 1200<br>VGE [V] IC [A]<br> [A] [A]<br>IC IC<br> [A]<br>IC E [mJ]<br>**----- End of picture text -----**<br> 5 IGBT-Module IGBT-modules ## FF600R12ME4_B11 **==> picture [485 x 279] intentionally omitted <==** **----- Start of picture text -----**<br> Eon =f(R),E G off =f(R G) ZthJC = f(t)<br>VGE =+15V,1 C =600A,V CE =600V<br>400 _—— 0,1 a<br>Eon, Tvj = 125°C ; se ZthJC : IGBT eT<br>Eon, Tvj = 150°C<br>350 EEoffoff, T, Tvjvj = 125°C = 150°C 7, wa aaa ee |<br>ee ) F R EE<br>300<br>| : PL<br>250<br>aa Zee HHP<br>200150 aeyVAJ)t| | |. 0,01 pPAa T TA|ET|<br>100<br>tt |)<br>i: 1 2 3 4<br>50 ri[K/W]: 0,0038 0,0312 0,0001 0,002<br>τ i[s]: 0,0007 0,0247 0,05 3,4847<br>0 0,001<br>0 2 4 6 8 10 12 14 0,001 0,01 0,1 1 10<br>RG [ Ω ] t [s]<br> [K/W]<br>E [mJ]<br>thJC<br>Z<br>**----- End of picture text -----**<br> ## **(RBSOA)** IF F) **==> picture [486 x 271] intentionally omitted <==** **----- Start of picture text -----**<br> IC =f(V CE)<br>VGE =415V,R Goff =1.5 Ω ,T vj =150°C<br>1300 1200<br>IC, Modul Tvj = 25°C<br>1200 IC, Chip Tvj = 125°C<br>[= J a lf<br>Tvj = 150°C<br>1100 1000<br>1000<br>900<br>800<br>800<br>700<br>600<br>600<br>500<br>400<br>400<br>300<br>200 200<br>100<br>0 0<br>0 200 400 600 800 1000 1200 1400 0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6 1,8 2,0 2,2 2,4<br>VCE [V] VF [V]<br> [A] [A]<br>IC IF<br>**----- End of picture text -----**<br> 6 IGBT-Module IGBT-modules ## FF600R12ME4_B11 **==> picture [487 x 596] intentionally omitted <==** **----- Start of picture text -----**<br> Erec =f(I F) Erec =f(R G)<br>RGon JM. Ω ,V CE =600V IF - 600A. V CE = 600 V<br>80 60<br>Erec, Tvj = 125°C Erec, Tvj = 125°C<br>Erec, Tvj = 150°C Erec, Tvj = 150°C<br>70 EJ]<br>| | UE<br>50<br>ee Bo tt<br>60<br>40<br>50<br>Coes } E S<br>40 aa a 30 ENS<br>30<br>a e oP 20 SR<br>20<br>4m 10 TTT yyy<br>PLL<br>10<br>0 0<br>0 200 400 600 800 1000 1200 0 2 4 6 8 10 12 14<br>IF [A] RG [ Ω ]<br>Transienter Warmewiderstand Diode, Wechselrichter NTC-Widerstand-Temperaturkennlinie (typisch)<br>transient thermal impedance Diode, Inverter NTC-Thermistor-temperature characteristic (typical)<br>ZthJC =f (t) R=f(T)<br>0,1 ee 100000 ee |<br>H ZthJC : Diode e — Rtyp —————<br>Po a a<br>i DO<br>PL TUTE TTT E TT es ee<br>PEt ep ry.<br>10000<br>PAC EAI LIE LTA Ne ee<br>;i —<br>van ee<br>0,01 7ee| TTT T ta aeTTTT are Ne ee eee<br>iee ee el aNNX eee<br>ET TT TET 1000 ————_————<br>a a ll a ee<br>i: 1 2 3 4<br>ri[K/W]: 0,0084 0,0489 0,002 0,0057<br>CS τ i[s]: 0,0006 0,0245 0,0733 0,9951 PN<br>0,001 Toon on 100 Pt tT TE EE<br>0,001 0,01 0,1 1 10 0 20 40 60 80 100 120 140 160<br>t [s] TC [°C]<br>E [mJ] E [mJ]<br>] Ω<br> [K/W]<br>R[<br>thJC<br>Z<br>**----- End of picture text -----**<br> 7 ## Technische�Information�/�Technical�Information IGBT-Module IGBT-modules FF600R12ME4_B11 ## **Schaltplan�/�circuit_diagram_headline** **==> picture [86 x 38] intentionally omitted <==** ## **Vorläufige�Daten Preliminary�Data** **==> picture [140 x 138] intentionally omitted <==** ## **Gehäuseabmessungen�/�package�outlines** **==> picture [17 x 4] intentionally omitted <==** **----- Start of picture text -----**<br> In fin e o n<br>**----- End of picture text -----**<br> **==> picture [37 x 31] intentionally omitted <==** **==> picture [37 x 32] intentionally omitted <==** **==> picture [37 x 31] intentionally omitted <==** **==> picture [37 x 32] intentionally omitted <==** **==> picture [319 x 25] intentionally omitted <==** **----- Start of picture text -----**<br> prepared�by:�CU date�of�publication:�2013-11-05<br>approved�by:�MK revision:�2.1<br>**----- End of picture text -----**<br> 8 **==> picture [66 x 19] intentionally omitted <==** **----- Start of picture text -----**<br> IGBT-Module<br>IGBT-modules<br>**----- End of picture text -----**<br> ## FF600R12ME4_B11 **==> picture [110 x 11] intentionally omitted <==** **----- Start of picture text -----**<br> Nutzungsbedingungen<br>**----- End of picture text -----**<br> **==> picture [42 x 8] intentionally omitted <==** **----- Start of picture text -----**<br> application.<br>**----- End of picture text -----**<br> 9
Updated at April 28, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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