![FF600R12KE7BPSA1 — IGBT Module, Dual [Half Bridge], 600 A, 1.75 V, 175 °C, Module](/media/2/2/9/8AC41155D5E50922.webp)
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FF600R12KE7BPSA1
IGBT Module, Dual [Half Bridge], 600 A, 1.75 V, 175 °C, Module
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: INFINEON
- Product type: IGBT Modules
- SVHC: No SVHC (25-Jun-2025)
- Product Range: -
- IGBT Technology: IGBT 7
- IGBT Termination: Screw
- Power Dissipation: -
- IGBT Configuration: Dual [Half Bridge]
- Transistor Mounting: Panel
- Transistor Case Style: Module
- Operating Temperature Max: 175°C
- Continuous Collector Current: 600A
- Collector Emitter Voltage Max: 1.2kV
- Collector Emitter Saturation Voltage: 1.75V
| Delivery and price | |
|---|---|
| Units per pack | 10 |
| Price | 123.8 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
**FF600R12KE7 62 mm C-Series module** ## **62 mm C-Series module with TRENCHSTOP[™] IGBT7 and emitter controlled 7 diode** ## **Features** - Electrical features - VCES = 1200 V - IC nom = 600 A / ICRM = 1200 A - TRENCHSTOP[TM] IGBT7 - VCE,sat with positive temperature coefficient - Mechanical features - 4 kV AC 1 min insulation - High creepage and clearance distances - High power density - Isolated base plate - Package with CTI > 400 - Standard housing ## **Potential applications** - Servo drives - Solar applications - UPS systems - Motor drives - High-power converters - Commercial agriculture vehicles - Three-level applications ## **Product validation** - Qualified for industrial applications according to the relevant tests of IEC 60747, 60749 and 60068 ## **Description** Please read the sections "Important notice" and "Warnings" at the end of this document Datasheet www.infineon.com Revision 1.00 2023-05-26 **FF600R12KE7 62 mm C-Series module** **==> picture [105 x 47] intentionally omitted <==** **Table of contents** ## **Table of contents** ||**Description**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1| |---|---| ||**Features**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1| ||**Potential applications**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1| ||**Product validation**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1| ||**Table of contents**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2| |**1**|**Package**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3| |**2**|**IGBT, T1 / T2**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3| |**3**|**Diode, D1 / D2**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .5| |**4**|**Characteristics diagrams**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7| |**5**|**Circuit diagram**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11| |**6**|**Package outlines**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12| |**7**|**Module label code**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13| ||**Revision history**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14| ||**Disclaimer**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15| Datasheet Revision 1.00 2023-05-26 2 **FF600R12KE7 62 mm C-Series module** **==> picture [105 x 47] intentionally omitted <==** ## **1 Package** ## **1 Package** |**1**<br>**Package**|**1**<br>**Package**|**1**<br>**Package**|**1**<br>**Package**|**1**<br>**Package**| |---|---|---|---|---| |**Table 1**<br>**Insulation coordination**||||| |**Parameter**|**Symbol**|**Note or test condition**|**Values**|**Unit**| |Isolation test voltage|_V_ISOL|RMS, f = 50 Hz,_t_= 60 s|4.0|kV| |Material of module<br>baseplate|||Cu|| |Internal isolation||basic insulation (class 1, IEC 61140)|Al2O3|| |Creepage distance|_d_Creep|terminal to heatsink|29.0|mm| |Creepage distance|_d_Creep|terminal to terminal|23.0|mm| |Clearance|_d_Clear|terminal to heatsink|23.0|mm| |Clearance|_d_Clear|terminal to terminal|11.0|mm| |Comparative tracking<br>index|_CTI_||> 400|| |Relative thermal index<br>(electrical)|_RTI_|housing|140|°C| |**Table 2**<br>**Characteristic values**|**Table 2**<br>**Characteristic values**|**Table 2**<br>**Characteristic values**|**Table 2**<br>**Characteristic values**||||| |---|---|---|---|---|---|---|---| |**Parameter**|**Symbol**|**Note or test condition**||**Values**|||**Unit**| |||||**Min.**|**Typ.**|**Max.**|| |Stray inductance module|_L_sCE||||20||nH| |Module lead resistance,<br>terminals - chip|_R_CC'+EE'|TC= 25 °C, per switch|||0.5||mΩ| |Storage temperature|_T_stg|||-40||125|°C| |Mounting torque for<br>module mounting|_M_|- Mounting according to<br>valid application note|M5, Screw|3||6|Nm| |Terminal connection<br>torque|_M_|- Mounting according to<br>valid application note|M6, Screw|2.5||5|Nm| |Weight|_G_||||340||g| ## **2 IGBT, T1 / T2** ## **Table 3 Maximum rated values** |**Parameter**|**Symbol**|**Note or test condition**||**Values**|**Unit**| |---|---|---|---|---|---| |Collector-emitter voltage|_V_CES||_T_vj= 25 °C|1200|V| |Continuous DC collector<br>current|_I_CDC|_T_vj max= 175 °C|_T_C= 90 °C|600|A| |Maximum RMS module DC-<br>terminal current|_I_tRMS||_T_Terminal= 115 °C,<br>_T_C= 90 °C|650|A| ||||_T_Terminal= 115 °C,<br>_T_C= 115 °C|600|| **(table continues...)** Datasheet Revision 1.00 2023-05-26 3 **FF600R12KE7 62 mm C-Series module** **==> picture [105 x 47] intentionally omitted <==** ## **2 IGBT, T1 / T2** |**Table 3**<br>**(continued) Maximum rated values**|**Table 3**<br>**(continued) Maximum rated values**|**Table 3**<br>**(continued) Maximum rated values**|||||| |---|---|---|---|---|---|---|---| |**Parameter**|**Symbol**|**Note or test condition**||**Values**|||**Unit**| |Repetitive peak collector<br>current|_I_CRM|tplimited by Tvj op||1200|||A| |Gate-emitter peak voltage|_V_GES|||±20|||V| ||||||||| |**Table 4**<br>**Characteristic values**|||||||| |**Parameter**|**Symbol**|**Note or test condition**||**Values**|||**Unit**| |||||**Min.**|**Typ.**|**Max.**|| |Collector-emitter<br>saturation voltage|_V_CE sat|_I_C= 600 A,_V_GE= 15 V|_T_vj= 25 °C||1.50|1.75|V| ||||_T_vj= 125 °C||1.65||| ||||_T_vj= 150 °C||1.70||| ||||_T_vj= 175 °C||1.75||| |Gate threshold voltage|_V_GEth|_I_C= 12 mA, VCE= VGE,_T_vj=|25 °C|5.15|5.80|6.45|V| |Gate charge|_Q_G|_V_GE= ±15 V,_V_CC= 600 V|||9.66||µC| |Internal gate resistor|_R_Gint|_T_vj= 25 °C|||0.6||Ω| |Input capacitance|_C_ies|_f_= 100 kHz,_T_vj= 25 °C,_V_CE= 25 V,_V_GE= 0 V|||92.3||nF| |Reverse transfer<br>capacitance|_C_res|_f_= 100 kHz,_T_vj= 25 °C,_V_CE= 25 V,_V_GE= 0 V|||0.462||nF| |Collector-emitter cut-of<br>current|_I_CES|_V_CE= 1200 V,_V_GE= 0 V|_T_vj= 25 °C|||0.1|mA| |Gate-emitter leakage<br>current|_I_GES|_V_CE= 0 V,_V_GE= 20 V,_T_vj= 25 °C||||100|nA| |Turn-on delay time<br>(inductive load)|_t_don|_I_C= 600 A,_V_CC= 600 V,<br>_V_GE= ±15 V,_R_Gon= 0.51 Ω|_T_vj= 25 °C||0.435||µs| ||||_T_vj= 125 °C||0.447||| ||||_T_vj= 150 °C||0.451||| ||||_T_vj= 175 °C||0.454||| |Rise time (inductive load)|_t_r|_I_C= 600 A,_V_CC= 600 V,<br>_V_GE= ±15 V,_R_Gon= 0.51 Ω|_T_vj= 25 °C||0.051||µs| ||||_T_vj= 125 °C||0.058||| ||||_T_vj= 150 °C||0.060||| ||||_T_vj= 175 °C||0.062||| |Turn-of delay time<br>(inductive load)|_t_dof|_I_C= 600 A,_V_CC= 600 V,<br>_V_GE= ±15 V,_R_Gof= 0.51 Ω|_T_vj= 25 °C||0.490||µs| ||||_T_vj= 125 °C||0.558||| ||||_T_vj= 150 °C||0.578||| ||||_T_vj= 175 °C||0.597||| **(table continues...)** Datasheet Revision 1.00 2023-05-26 4 **FF600R12KE7 62 mm C-Series module** **==> picture [105 x 47] intentionally omitted <==** ## **3 Diode, D1 / D2** |**Table 4**<br>**(continued) Characteristic values**|**Table 4**<br>**(continued) Characteristic values**|**Table 4**<br>**(continued) Characteristic values**|||||| |---|---|---|---|---|---|---|---| |**Parameter**|**Symbol**|**Note or test condition**||**Values**|||**Unit**| |||||**Min.**|**Typ.**|**Max.**|| |Fall time (inductive load)|_t_f|_I_C= 600 A,_V_CC= 600 V,<br>_V_GE= ±15 V,_R_Gof= 0.51 Ω|_T_vj= 25 °C||0.119||µs| ||||_T_vj= 125 °C||0.249||| ||||_T_vj= 150 °C||0.295||| ||||_T_vj= 175 °C||0.340||| |Turn-on energy loss per<br>pulse|_E_on|_I_C= 600 A,_V_CC= 600 V,<br>_L_σ= 25 nH,_V_GE= ±15 V,<br>_R_Gon= 0.51 Ω, di/dt =<br>7700 A/µs (Tvj= 175 °C)|_T_vj= 25 °C||17||mJ| ||||_T_vj= 125 °C||25.1||| ||||_T_vj= 150 °C||28.6||| ||||_T_vj= 175 °C||32||| |Turn-of energy loss per<br>pulse|_E_of|_I_C= 600 A,_V_CC= 600 V,<br>_L_σ= 25 nH,_V_GE= ±15 V,<br>_R_Gof= 0.51 Ω, dv/dt =<br>3150 V/µs (Tvj= 175 °C)|_T_vj= 25 °C||53.2||mJ| ||||_T_vj= 125 °C||80.5||| ||||_T_vj= 150 °C||89.7||| ||||_T_vj= 175 °C||98.9||| |SC data|_I_SC|_V_GE≤ 15 V,_V_CC= 800 V,<br>VCEmax=VCES-LsCE*di/dt|_t_P≤ 8 µs,<br>_T_vj=150 °C||2250||A| ||||_t_P≤ 6 µs,<br>_T_vj=175 °C||2000||| |Thermal resistance,<br>junction to case|_R_thJC|per IGBT||||0.0668|K/W| |Thermal resistance, case to<br>heat sink|_R_thCH|per IGBT,λgrease= 1 W/(m·K)|||0.0336||K/W| |Temperature under<br>switching conditions|_T_vj op|||-40||175|°C| _Note: T_ vj op _> 150 °C is only allowed for operation at overload conditions. For detailed specifications please refer to AN 2018-14._ ## **3 Diode, D1 / D2** **Table 5 Maximum rated values** |**Parameter**|**Symbol**|**Note or test condition**|**Note or test condition**|**Values**|**Unit**| |---|---|---|---|---|---| |Repetitive peak reverse<br>voltage|_V_RRM||_T_vj= 25 °C|1200|V| |Continuous DC forward<br>current|_I_F|||600|A| |Repetitive peak forward<br>current|_I_FRM|_t_P= 1 ms||1200|A| ## **(table continues...)** Datasheet Revision 1.00 2023-05-26 5 **FF600R12KE7 62 mm C-Series module** **==> picture [105 x 47] intentionally omitted <==** ## **3 Diode, D1 / D2** |**Table 5**<br>**(continued) Maximum rated values**|**Table 5**<br>**(continued) Maximum rated values**|**Table 5**<br>**(continued) Maximum rated values**|||||| |---|---|---|---|---|---|---|---| |**Parameter**|**Symbol**|**Note or test condition**||**Values**|||**Unit**| |I2t - value|_I_2_t_|_t_P= 10 ms,_V_R= 0 V|_T_vj= 125 °C|29900|||A²s| ||||_T_vj= 175 °C|23200|||| ||||||||| |**Table 6**<br>**Characteristic values**|||||||| |**Parameter**|**Symbol**|**Note or test condition**||**Values**|||**Unit**| |||||**Min.**|**Typ.**|**Max.**|| |Forward voltage|_V_F|_I_F= 600 A,_V_GE= 0 V|_T_vj= 25 °C||1.80|2.10|V| ||||_T_vj= 125 °C||1.70||| ||||_T_vj= 150 °C||1.65||| ||||_T_vj= 175 °C||1.60||| |Peak reverse recovery<br>current|_I_RM|_V_CC= 600 V,_I_F= 600 A,<br>_V_GE= -15 V, -diF/dt =<br>7700 A/µs (Tvj= 175 °C)|_T_vj= 25 °C||448||A| ||||_T_vj= 125 °C||583||| ||||_T_vj= 150 °C||616||| ||||_T_vj= 175 °C||648||| |Recovered charge|_Q_r|_V_CC= 600 V,_I_F= 600 A,<br>_V_GE= -15 V, -diF/dt =<br>7700 A/µs (Tvj= 175 °C)|_T_vj= 25 °C||49.4||µC| ||||_T_vj= 125 °C||85.7||| ||||_T_vj= 150 °C||100||| ||||_T_vj= 175 °C||115||| |Reverse recovery energy|_E_rec|_V_CC= 600 V,_I_F= 600 A,<br>_V_GE= -15 V, -diF/dt =<br>7700 A/µs (Tvj= 175 °C)|_T_vj= 25 °C||27.9||mJ| ||||_T_vj= 125 °C||45.6||| ||||_T_vj= 150 °C||51.8||| ||||_T_vj= 175 °C||58||| |Thermal resistance,<br>junction to case|_R_thJC|per diode||||0.110|K/W| |Thermal resistance, case to<br>heat sink|_R_thCH|per diode,λgrease= 1 W/(m·K)|||0.0466||K/W| |Temperature under<br>switching conditions|_T_vj op|||-40||175|°C| _Note: T_ vj op _> 150 °C is only allowed for operation at overload conditions. For detailed specifications please refer to AN 2018-14._ Datasheet Revision 1.00 2023-05-26 6 **FF600R12KE7 62 mm C-Series module** **4 Characteristics diagrams** **4 Characteristics diagrams** **==> picture [105 x 47] intentionally omitted <==** **Output characteristic (typical), IGBT, T1 / T2** IC = f(VCE) ## VGE = 15 V **==> picture [228 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 1200<br>1100<br>1000<br>900<br>800<br>700<br>600<br>500<br>400<br>300<br>200<br>100<br>0<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0<br>**----- End of picture text -----**<br> **Transfer characteristic (typical), IGBT, T1 / T2** IC = f(VGE) VCE = 20 V **==> picture [228 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 1200<br>1100<br>1000<br>900<br>800<br>700<br>600<br>500<br>400<br>300<br>200<br>100<br>0<br>4 5 6 7 8 9 10 11 12 13 14<br>**----- End of picture text -----**<br> **Output characteristic field (typical), IGBT, T1 / T2** IC = f(VCE) T = 175 °C vj **==> picture [229 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 1200<br>1100<br>1000<br>900<br>800<br>700<br>600<br>500<br>400<br>300<br>200<br>100<br>0<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0<br>**----- End of picture text -----**<br> **Gate charge characteristic (typical), IGBT, T1 / T2** VGE = f(QG) IC = 600 A, Tvj = 25 °C **==> picture [229 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 15<br>13<br>11<br>9<br>7<br>5<br>3<br>1<br>-1<br>-3<br>-5<br>-7<br>-9<br>-11<br>-13<br>-15<br>0 1 2 3 4 5 6 7 8 9 10<br>**----- End of picture text -----**<br> Datasheet Revision 1.00 2023-05-26 7 **FF600R12KE7 62 mm C-Series module** **==> picture [105 x 47] intentionally omitted <==** ## **4 Characteristics diagrams** **Capacity characteristic (typical), IGBT, T1 / T2** C = f(VCE) f = 100 kHz, VGE = 0 V, Tvj = 25 °C **==> picture [228 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 1000<br>100<br>10<br>1<br>0.1<br>0.01<br>0 10 20 30 40 50 60 70 80 90 100<br>**----- End of picture text -----**<br> ## **Switching times (typical), IGBT, T1 / T2** t = f(RG) IC = 600 A, VCC = 600 V, VGE = ± 15 V, Tvj = 175 °C **==> picture [228 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 10<br>1<br>0.1<br>0.01<br>0 1 2 3 4 5 6<br>**----- End of picture text -----**<br> ## **Switching times (typical), IGBT, T1 / T2** t = f(IC) RGoff = 0.51 Ω, RGon = 0.51 Ω, VCC = 600 V, VGE = ± 15 V, Tvj = 175 °C **==> picture [229 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 10<br>1<br>0.1<br>0.01<br>0 200 400 600 800 1000 1200<br>**----- End of picture text -----**<br> **Voltage slope (typical), IGBT, T1 / T2** dv/dt = f(RG) IC = 600 A, VCC = 600 V, VGE = ±15 V, Tvj = 25 °C **==> picture [229 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 9<br>8<br>7<br>6<br>5<br>4<br>3<br>2<br>1<br>0<br>0 1 2 3 4 5 6<br>**----- End of picture text -----**<br> Datasheet Revision 1.00 2023-05-26 8 **FF600R12KE7 62 mm C-Series module** **==> picture [105 x 47] intentionally omitted <==** ## **4 Characteristics diagrams** ## **Switching losses (typical), IGBT, T1 / T2** ## E = f(IC) RGoff = 0.51 Ω, RGon = 0.51 Ω, VCC = 600 V, VGE = ± 15 V **==> picture [228 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 200<br>180<br>160<br>140<br>120<br>100<br>80<br>60<br>40<br>20<br>0<br>0 200 400 600 800 1000 1200<br>**----- End of picture text -----**<br> ## **Reverse bias safe operating area (RBSOA), IGBT, T1 / T2** ## **Switching losses (typical), IGBT, T1 / T2** E = f(RG) IC = 600 A, VCC = 600 V, VGE = ± 15 V **==> picture [229 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 220<br>200<br>180<br>160<br>140<br>120<br>100<br>80<br>60<br>40<br>20<br>0<br>0 1 2 3 4 5 6<br>**----- End of picture text -----**<br> **Transient thermal impedance, IGBT, T1 / T2** Zth = f(t) IC = f(VCE) RGoff = 0.51 Ω, VGE = ±15 V, Tvj = 175 °C **==> picture [228 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 1600<br>1400<br>1200<br>1000<br>800<br>600<br>400<br>200<br>0<br>0 200 400 600 800 1000 1200 1400<br>**----- End of picture text -----**<br> **==> picture [229 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 1<br>0.1<br>0.01<br>0.001<br>0.001 0.01 0.1 1 10<br>**----- End of picture text -----**<br> Datasheet Revision 1.00 2023-05-26 9 **FF600R12KE7 62 mm C-Series module** **==> picture [105 x 47] intentionally omitted <==** ## **4 Characteristics diagrams** ## **Forward characteristic (typical), Diode, D1 / D2** IF = f(VF) **==> picture [228 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 1200<br>1100<br>1000<br>900<br>800<br>700<br>600<br>500<br>400<br>300<br>200<br>100<br>0<br>0.0 0.5 1.0 1.5 2.0 2.5<br>**----- End of picture text -----**<br> **Switching losses (typical), Diode, D1 / D2** Erec = f(RG) IF = 600 A, VCC = 600 V **==> picture [228 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 80<br>70<br>60<br>50<br>40<br>30<br>20<br>10<br>0<br>0 1 2 3 4 5 6<br>**----- End of picture text -----**<br> **Switching losses (typical), Diode, D1 / D2** Erec = f(IF) RGon = 0.51 Ω, VCC = 600 V **==> picture [229 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 80<br>70<br>60<br>50<br>40<br>30<br>20<br>10<br>0<br>0 200 400 600 800 1000 1200<br>**----- End of picture text -----**<br> **Transient thermal impedance, Diode, D1 / D2** Zth = f(t) **==> picture [229 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 1<br>0.1<br>0.01<br>0.001<br>0.001 0.01 0.1 1 10<br>**----- End of picture text -----**<br> Datasheet Revision 1.00 2023-05-26 10 **FF600R12KE7 62 mm C-Series module** **==> picture [105 x 47] intentionally omitted <==** ## **5 Circuit diagram** **==> picture [541 x 249] intentionally omitted <==** **----- Start of picture text -----**<br> 5 Circuit diagram<br>3<br>T1<br>D1<br>4<br>5<br>1<br>T2<br>D2<br>6<br>7<br>2<br>**----- End of picture text -----**<br> ## **Figure 1** Datasheet Revision 1.00 2023-05-26 11 **FF600R12KE7 62 mm C-Series module** **==> picture [105 x 47] intentionally omitted <==** ## **6 Package outlines** **==> picture [541 x 466] intentionally omitted <==** **----- Start of picture text -----**<br> 6 Package outlines<br>Infineon<br>**----- End of picture text -----**<br> **Figure 2** Datasheet Revision 1.00 2023-05-26 12 **FF600R12KE7 62 mm C-Series module** **==> picture [105 x 47] intentionally omitted <==** ## **7 Module label code** ## **7 Module label code** |**Module label code**|**Module label code**|**Module label code**|**Module label code**|**Module label code**| |---|---|---|---|---| |Code format|Data Matrix||Barcode Code128|| |Encoding|ASCII text||Code Set A|| |Symbol size|16x16||23 digits|| |Standard|IEC24720 and IEC16022||IEC8859-1|| |||||| |Code content|_Content_<br>Module serial number<br>Module material number<br>Production order number<br>Date code (production year)<br>Date code (production week)|_Digit_<br>1 – 5<br>6 - 11<br>12 - 19<br>20 – 21<br>22 – 23||_Example_<br>71549<br>142846<br>55054991<br>15<br>30| |Example|71549142846550549911530<br>71549142846550549911530|||| ## **Figure 3** Datasheet Revision 1.00 2023-05-26 13 **FF600R12KE7 62 mm C-Series module** **==> picture [105 x 47] intentionally omitted <==** **Revision history** ## **Revision history** |**Revision history**||| |---|---|---| |**Document revision**|**Date of release**|**Description of changes**| |0.10|2021-12-07|Initial version| |0.20|2022-09-06|Preliminary datasheet| |1.00|2023-05-26|Final datasheet| Datasheet Revision 1.00 2023-05-26 14 ## **Trademarks** All referenced product or service names and trademarks are the property of their respective owners. **Edition 2023-05-26 Important notice Published by** The information given in this document shall in no event be regarded as a guarantee of conditions or **Infineon Technologies AG** characteristics (“Beschaffenheitsgarantie”). **81726 Munich, Germany** With respect to any examples, hints or any typical values stated herein and/or any information regarding **© 2023 Infineon Technologies AG** the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities **All Rights Reserved.** of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. **Do you have a question about any aspect of this document?** In addition, any information given in this document is **Email: erratum@infineon.com** subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning **Document reference** customer’s products and any use of the product of **IFX-ABA802-003** Infineon Technologies in customer’s applications. ## **Warnings** Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application.
Updated at April 28, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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