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FF600R12KE4PBOSA1
IGBT Module, Dual, 600 A, 1.75 V, 150 °C, Module
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: INFINEON
- Product type: IGBT Modules
- SVHC: No SVHC (25-Jun-2025)
- Product Range: 62mm C
- IGBT Technology: IGBT 4 [Trench/Field Stop]
- IGBT Termination: Stud
- Power Dissipation: -
- IGBT Configuration: Dual
- Transistor Mounting: Panel
- DC Collector Current: 600A
- Power Dissipation Pd: -
- Transistor Case Style: Module
- Operating Temperature Max: 150°C
- Junction Temperature Tj Max: 150°C
- Continuous Collector Current: 600A
- Collector Emitter Voltage Max: 1.2kV
- Collector Emitter Voltage V(br)ceo: 1.2kV
- Collector Emitter Saturation Voltage: 1.75V
- Collector Emitter Saturation Voltage Vce(on): 1.75V
| Delivery and price | |
|---|---|
| Units per pack | 10 |
| Price | 140.26 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
## FF600R12KE4P VCES = 1200V IC nom = 600A / ICRM = 1200A - Hochleistungsumrichter - • Motorantriebe • USV-Systeme • Windgeneratoren - - - CEsat - • Sehr grof&e • VCEsat mit - - - - - - Standardgehäuse - • Thermisches Interface Material bereits aufgetragen - - - - - - - CEsat - • Unbeatable • VCEsat - - - - - - - **Digit** Datasheet www.infineon.com 2019-10-10 FF600R12KE4P **==> picture [86 x 38] intentionally omitted <==** ## **Vorläufige�Daten Preliminary�Data** |**IGBT,Wechselrichter/IGBT,Inverter**<br>**HöchstzulässigeWerte/MaximumRatedValues**|**IGBT,Wechselrichter/IGBT,Inverter**<br>**HöchstzulässigeWerte/MaximumRatedValues**|||||| |---|---|---|---|---|---|---| |Kollektor-Emitter-Sperrspannung<br>Collector-emittervoltage|Tvj= 25°C|VCES|1200|||V| |Kollektor-Dauergleichstrom<br>ContinuousDCcollectorcurrent|TH= 70°C, Tvj max= 175°C|ICDC|600|||A| |PeriodischerKollektor-Spitzenstrom<br>Repetitivepeakcollectorcurrent|tP= 1 ms|ICRM|1200|||A| |Gate-Emitter-Spitzenspannung<br>Gate-emitterpeakvoltage||VGES|+/-20|||V| |**CharakteristischeWerte/CharacteristicValues**|||min.|typ.|max.|| |Kollektor-Emitter-Sättigungsspannung<br>Collector-emittersaturationvoltage|IC= 600 A<br>VGE= 15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|VCE sat||1,75<br>2,00<br>2,05|2,20|V<br>V<br>V| |Gate-Schwellenspannung<br>Gatethresholdvoltage|IC= 23,0 mA, VCE= VGE, Tvj= 25°C|VGEth|5,25|5,80|6,35|V| |Gateladung<br>Gatecharge|VGE= -15 / 15 V|QG||5,00||µC| |InternerGatewiderstand<br>Internalgateresistor|Tvj= 25°C|RGint||1,3||Ω| |Eingangskapazität<br>Inputcapacitance|f = 1000 kHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V|Cies||38,0||nF| |Rückwirkungskapazität<br>Reversetransfercapacitance|f = 1000 kHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V|Cres||1,40||nF| |Kollektor-Emitter-Reststrom<br>Collector-emittercut-offcurrent|VCE= 1200 V, VGE= 0 V, Tvj= 25°C|ICES|||5,0|mA| |Gate-Emitter-Reststrom<br>Gate-emitterleakagecurrent|VCE= 0 V, VGE= 20 V, Tvj= 25°C|IGES|||400|nA| |Einschaltverzögerungszeit,induktiveLast<br>Turn-ondelaytime,inductiveload|IC= 600 A, VCE= 600 V<br>VGE= -15 / 15 V<br>RGon= 0,62Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|td on||0,17<br>0,18<br>0,18||µs<br>µs<br>µs| |Anstiegszeit,induktiveLast<br>Risetime,inductiveload|IC= 600 A, VCE= 600 V<br>VGE= -15 / 15 V<br>RGon= 0,62Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|tr||0,046<br>0,048<br>0,052||µs<br>µs<br>µs| |Abschaltverzögerungszeit,induktiveLast<br>Turn-offdelaytime,inductiveload|IC= 600 A, VCE= 600 V<br>VGE= -15 / 15 V<br>RGoff= 0,62Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|td off||0,40<br>0,49<br>0,52||µs<br>µs<br>µs| |Fallzeit,induktiveLast<br>Falltime,inductiveload|IC= 600 A, VCE= 600 V<br>VGE= -15 / 15 V<br>RGoff= 0,62Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|tf||0,062<br>0,098<br>0,11||µs<br>µs<br>µs| |EinschaltverlustenergieproPuls<br>Turn-onenergylossperpulse|IC= 600 A, VCE= 600 V, Lσ= 35 nH<br>di/dt = 11000 A/µs (Tvj= 150°C)<br>VGE= -15 / 15 V, RGon= 0,62Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Eon||16,0<br>29,5<br>35,5||mJ<br>mJ<br>mJ| |AbschaltverlustenergieproPuls<br>Turn-offenergylossperpulse|IC= 600 A, VCE= 600 V, Lσ= 35 nH<br>du/dt = 3300 V/µs (Tvj= 150°C)<br>VGE= -15 / 15 V, RGoff= 0,62Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Eoff||45,5<br>70,0<br>78,0||mJ<br>mJ<br>mJ| |Kurzschlußverhalten<br>SCdata|VGE ≤15 V, VCC= 800 V<br>VCEmax= VCES-LsCE·di/dt<br>Tvj= 150°C<br>tP ≤10 µs,|ISC||2600||A| |Wärmewiderstand,ChipbisKühlkörper<br>Thermalresistance,junctiontoheatsink|proIGBT/perIGBT<br>validwithIFXpre-appliedthermalinterfacematerial|RthJH|||0,0653|K/W| |TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions||Tvj op|-40||150|°C| 2 V�2.1 2019-10-10 Datasheet FF600R12KE4P **==> picture [86 x 38] intentionally omitted <==** ## **Vorläufige�Daten Preliminary�Data** |**Diode,Wechselrichter/Diode,Inverter**<br>**HöchstzulässigeWerte/MaximumRatedValues**|**Diode,Wechselrichter/Diode,Inverter**<br>**HöchstzulässigeWerte/MaximumRatedValues**|||||| |---|---|---|---|---|---|---| |PeriodischeSpitzensperrspannung<br>Repetitivepeakreversevoltage|Tvj= 25°C|VRRM|1200|||V| |Dauergleichstrom<br>ContinuousDCforwardcurrent||IF|600|||A| |PeriodischerSpitzenstrom<br>Repetitivepeakforwardcurrent|tP= 1 ms|IFRM|1200|||A| |Grenzlastintegral<br>I²t-value|VR= 0 V, tP= 10 ms, Tvj= 125°C<br>VR= 0 V, tP= 10 ms, Tvj= 150°C|I²t|35000<br>33000<br>|||A²s<br>A²s| |**CharakteristischeWerte/CharacteristicValues**|||min.|typ.|max.|| |Durchlassspannung<br>Forwardvoltage|IF= 600 A, VGE= 0 V<br>IF= 600 A, VGE= 0 V<br>IF= 600 A, VGE= 0 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|VF||1,85<br>1,80<br>1,75|2,45|V<br>V<br>V| |Rückstromspitze<br>Peakreverserecoverycurrent|IF= 600 A, - diF/dt = 11000 A/µs (Tvj=150°C)<br>VR= 600 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|IRM||535<br>655<br>680||A<br>A<br>A| |Sperrverzögerungsladung<br>Recoveredcharge|IF= 600 A, - diF/dt = 11000 A/µs (Tvj=150°C)<br>VR= 600 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Qr||50,5<br>94,0<br>110||µC<br>µC<br>µC| |AbschaltenergieproPuls<br>Reverserecoveryenergy|IF= 600 A, - diF/dt = 11000 A/µs (Tvj=150°C)<br>VR= 600 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Erec||27,0<br>48,5<br>54,5||mJ<br>mJ<br>mJ| |Wärmewiderstand,ChipbisKühlkörper<br>Thermalresistance,junctiontoheatsink|proDiode/perdiode<br>validwithIFXpre-appliedthermalinterfacematerial|RthJH|||0,126|K/W| |TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions||Tvj op|-40||150|°C| 3 V�2.1 2019-10-10 Datasheet FF600R12KE4P **==> picture [86 x 38] intentionally omitted <==** ## **Vorläufige�Daten Preliminary�Data** ## **Modul�/�Module** |**Modul/Module**||||||| |---|---|---|---|---|---|---| |Isolations-Prüfspannung<br>Isolationtestvoltage|RMS, f = 50 Hz, t = 1 min.|VISOL|4,0<br>|||kV| |MaterialModulgrundplatte<br>Materialofmodulebaseplate|||Cu|||| |InnereIsolation<br>Internalisolation|Basisisolierung(Schutzklasse1,EN61140)<br>basicinsulation(class1,IEC61140)||Al2O3|||| |Kriechstrecke<br>Creepagedistance|Kontakt-Kühlkörper/terminaltoheatsink<br>Kontakt-Kontakt/terminaltoterminal||29,0<br>23,0<br>|||mm| |Luftstrecke<br>Clearance|Kontakt-Kühlkörper/terminaltoheatsink<br>Kontakt-Kontakt/terminaltoterminal||23,0<br>11,0<br>|||mm| |VergleichszahlderKriechwegbildung<br>Comperativetrackingindex||CTI||> 400||| |RelativerTemperaturindex(elektr.)<br>RTIElec.|Gehäuse<br>housing|RTI|140|||°C| ||||min.|typ.|max.|| |Modulstreuinduktivität<br>Strayinductancemodule||LsCE||20||nH| |Modulleitungswiderstand,Anschlüsse-<br>Chip<br>Moduleleadresistance,terminals-chip|TH=25°C,proSchalter/perswitch|RCC'+EE'||0,42||mΩ| |Lagertemperatur<br>Storagetemperature||Tstg|-40||125|°C| |Höchstzulässige<br>Bodenplattenbetriebstemperatur<br>Maximumbaseplateoperationtemperature||TBPmax|||125|°C| |Anzugsdrehmomentf.Modulmontage<br>Mountingtorqueformodulmounting|SchraubeM6-Montagegem.gültigerApplikationsschrift<br>ScrewM6-Mountingaccordingtovalidapplicationnote|M|3,00||6,00|Nm| |Anzugsdrehmomentf.elektr.Anschlüsse<br>Terminalconnectiontorque|SchraubeM6-Montagegem.gültigerApplikationsschrift<br>ScrewM6-Mountingaccordingtovalidapplicationnote|M|2,5|-|5,0|Nm| |Gewicht<br>Weight||G||340||g| Lagerung und Transport von Modulen mit TIM => siehe AN2012-07 Storage and shipment of modules with TIM => see AN2012-07 V�2.1 2019-10-10 Datasheet 4 FF600R12KE4P **==> picture [86 x 38] intentionally omitted <==** ## **Vorläufige�Daten Preliminary�Data** **Ausgangskennlinie�IGBT,Wechselrichter�(typisch) output�characteristic�IGBT,Inverter�(typical)** IC�=�f�(VCE) VGE�=�15�V **Ausgangskennlinienfeld�IGBT,Wechselrichter�(typisch) output�characteristic�IGBT,Inverter�(typical)** IC�=�f�(VCE) Tvj�=�150°C **==> picture [484 x 282] intentionally omitted <==** **----- Start of picture text -----**<br> 1200 1200<br>1100 T T vj vj = 25°C = 125 ° C 1100 V V GE GE = 19V = 17V<br>Tvj = 150°C VGE = 15V<br>VGE = 13V<br>1000 1000 VGE = 11V<br>VGE = 9V<br>900 900<br>800 800<br>700 700<br>600 600<br>500 500<br>400 400<br>300 300<br>200 200<br>100 100<br>0 0<br>0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0<br>VCE [V] VCE [V]<br> [A] [A]<br>IC IC<br>**----- End of picture text -----**<br> **Übertragungscharakteristik�IGBT,Wechselrichter�(typisch) transfer�characteristic�IGBT,Inverter�(typical)** IC�=�f�(VGE) VCE�=�20�V ## **Schaltverluste�IGBT,Wechselrichter�(typisch) switching�losses�IGBT,Inverter�(typical)** Eon�=�f�(IC),�Eoff�=�f�(IC) VGE�=�±15�V,�RGon�=�0.62� Ω ,�RGoff�=�0.62� Ω ,�VCE�=�600�V **==> picture [487 x 282] intentionally omitted <==** **----- Start of picture text -----**<br> 1200 150<br>1100 T T vj vj = 25°C = 125 ° C 140 EEonon, T, Tvjvj = 125°C = 150°C<br>Tvj = 150°C Eoff, Tvj = 125°C<br>130 E off , T vj = 150°C<br>1000<br>120<br>900<br>110<br>800 100<br>90<br>700<br>80<br>600<br>70<br>500<br>60<br>400 50<br>40<br>300<br>30<br>200<br>20<br>100<br>10<br>0 0<br>6 7 8 9 10 11 12 13 0 200 400 600 800 1000 1200<br>VGE [V] IC [A]<br> [A]<br>IC E [mJ]<br>**----- End of picture text -----**<br> V�2.1 2019-10-10 Datasheet 5 FF600R12KE4P **==> picture [486 x 656] intentionally omitted <==** **----- Start of picture text -----**<br> Eon =f(R),E G off =f(R G) ZthJH =f (t)<br>VGE =+15V,| C =600A,V CE =600V<br>180170 EEonon,, T Tvvjj = 125°C = 150°C y [°] 0,1 pot ZthJH : IGBT TT<br>160 EEoffoff, T, Tvjvj = 125°C = 150°C 7/ a HHH<br>150<br>140<br>130<br>120<br>110<br>100 0,01<br>90<br>80<br>70<br>60<br>50<br>40 i: 1 2 3 4<br>ri[K/W]: 0,00325 0,0231 0,0267 0,0122<br>τ i[s]: 0,0012 0,0367 0,143 0,992<br>30<br>20 0,001<br>0 1 2 3 4 5 6 7 0,001 0,01 0,1 1 10<br>RG [ Ω ] t [s]<br>Sicherer Ruckwarts-Arbeitsbereich IGBT,Wechselrichter Durchlasskennlinie der Diode, Wechselrichter (typisch)<br>(RBSOA) forward characteristic of Diode, Inverter (typical)<br>reverse bias safe operating area IGBT,Inverter (RBSOA) IF =f(V F)<br>IC =f(V CE)<br>VGE =415V,R Goff =062 Ω ,T vj =150°C<br>1400 1200<br>I I CC, Modul , Chip 1100 T T vj vj = 25°C = 125 ° C<br>Tvj = 150°C<br>1200<br>1000<br>900<br>1000<br>800<br>700<br>800<br>600<br>if<br>600<br>500 if /<br>400<br>Poff<br>400<br>300<br>200<br>200<br>100<br>0 neat 0 alloO yf<br>Ep! Zee<br>0 200 400 600 800 1000 1200 1400 0,0 0,3 0,6 0,9 1,2 1,5 1,8 2,1 2,4 2,7 3,0<br>VCE [V] VF [V]<br> [K/W]<br>E [mJ]<br>thJH<br>Z<br> [A] [A]<br>IC IF<br>**----- End of picture text -----**<br> 6 Datasheet 2019-10-10 FF600R12KE4P **==> picture [483 x 309] intentionally omitted <==** **----- Start of picture text -----**<br> Erec =f (I F) Erec =f(R G)<br>RGon =0.62 Ω ,V CE =600V IF =600A,V CE =600V<br>80 80<br>Erec, Tvj = 125°C Erec, Tvj = 125°C<br>Erec, Tvj = 150°C Erec, Tvj = 150°C<br>70 70<br>_ 7 ~<br>a"<br>a<br>60 Za 2 60<br>4 [7]<br>/ aN<br>50 7 50 NX<br>7 ~<br>40 40<br>/i”Ae ~~a ~~ - ~<br>7<br>30 / 30<br>/<br>/<br>/<br>20 20<br>10 10<br>0 0<br>0 200 400 600 800 1000 1200 0 1 2 3 4 5 6 7<br>IF [A] RG [ Ω ]<br>E [mJ] E [mJ]<br>**----- End of picture text -----**<br> ZthJH **==> picture [236 x 282] intentionally omitted <==** **----- Start of picture text -----**<br> 1 a ee<br>_—ee [RS] ZthJH : Diode ee eee<br>0,1<br>ai a<br>0,01<br>i: 1 2 3 4<br>ri[K/W]: 0,0065 0,0597 0,0407 0,0194<br>τ i[s]: 0,00109 0,0364 0,229 1,92<br>0,001<br>0,001 0,01 0,1 1 10<br>t [s]<br> [K/W]<br>thJH<br>Z<br>**----- End of picture text -----**<br> Datasheet 7 2019-10-10 FF600R12KE4P **==> picture [86 x 38] intentionally omitted <==** ## **Schaltplan�/�Circuit�diagram** ## **Vorläufige�Daten Preliminary�Data** **==> picture [272 x 154] intentionally omitted <==** ## **Gehäuseabmessungen�/�Package�outlines** **==> picture [28 x 6] intentionally omitted <==** **----- Start of picture text -----**<br> Infineon<br>**----- End of picture text -----**<br> 8 V�2.1 2019-10-10 Datasheet ## **Trademarks** ## **WARNHINWEIS** ## **WARNINGS**
Updated at April 28, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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