FF600R12KE4EBOSA1

IGBT Module, Dual, Common Emitter, 600 A, 1.75 V, 150 °C, Module

⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.

Manufacturer: INFINEON
Product type: IGBT Modules
Transistor Polarity:Dual N Channel; DC Collector Current:600A; Collector Emitter Saturation Voltage Vce(on):1.75V; Power Dissipation Pd:-; Collector Emitter Voltage V(br)ceo:1.2kV; Trans
SVHC: No SVHC (25-Jun-2025)
No. of Pins: 7Pins
Product Range: -
IGBT Technology: IGBT 4 [Trench/Field Stop]
IGBT Termination: Stud
Power Dissipation: -
IGBT Configuration: Dual, Common Emitter
Transistor Mounting: Panel
Transistor Polarity: Dual N Channel
DC Collector Current: 600A
Power Dissipation Pd: -
Transistor Case Style: Module
Operating Temperature Max: 150°C
Junction Temperature Tj Max: 150°C
Continuous Collector Current: 600A
Collector Emitter Voltage Max: 1.2kV
Collector Emitter Voltage V(br)ceo: 1.2kV
Collector Emitter Saturation Voltage: 1.75V
Collector Emitter Saturation Voltage Vce(on): 1.75V

Delivery and price
Units per pack	5
Price	143.18 €
Current stock	10+
Lead time	30 days

Datasheet

IGBT-Modul IGBT-Module 

## FF600R12KE4 

VCES = 1200V IC nom = 600A / ICRM = 1200A 

- Hochleistungsumrichter 

- • Motorantriebe • USV-Systeme • Windgeneratoren 

- 

- 

- CEsat 

- • Sehr grof§e • VCEsat mit 

- 

- 

- 

- 

- 

- Standardgehäuse 

- 

- 

- 

- 

- 

- 

- CEsat 

- • Unbeatable • VCEsat 

- 

- 

- 

- 

- 

- 

**Digit** 

1 

## Technische�Information�/�Technical�Information 

> IGBT-ModulIGBT-Module FF600R12KE4 

**==> picture [86 x 38] intentionally omitted <==**

## **Vorläufige�Daten Preliminary�Data** 

|TechnischeInformation/TechnicalInformation<br>FF600R12KE4<br>IGBT-Modul<br>IGBT-Module||
|---|---|
|preparedby:CE<br>approvedby:MK<br>dateofpublication:2016-08-08<br>revision:V2.2<br>**VorläufigeDaten**<br>**PreliminaryData**<br>**IGBT,Wechselrichter/IGBT,Inverter**<br>**HöchstzulässigeWerte/MaximumRatedValues**<br>Kollektor-Emitter-Sperrspannung<br>Collector-emittervoltage<br>Tvj= 25°C<br>VCES<br>1200<br>V<br>Kollektor-Dauergleichstrom<br>ContinuousDCcollectorcurrent<br>TC= 100°C, Tvj max= 175°C<br>IC nom<br>600<br>A<br>PeriodischerKollektor-Spitzenstrom<br>Repetitivepeakcollectorcurrent<br>tP= 1 ms<br>ICRM<br>1200<br>A<br>Gate-Emitter-Spitzenspannung<br>Gate-emitterpeakvoltage<br>VGES<br>+/-20<br>V<br>**CharakteristischeWerte/CharacteristicValues**<br>min.<br>typ.<br>max.<br>Kollektor-Emitter-Sättigungsspannung<br>Collector-emittersaturationvoltage<br>IC= 600 A, VGE= 15 V<br>IC= 600 A, VGE= 15 V<br>IC= 600 A, VGE= 15 V<br>VCE sat<br>1,75<br>2,00<br>2,05<br>2,20<br>V<br>V<br>V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Gate-Schwellenspannung<br>Gatethresholdvoltage<br>IC= 23,0 mA, VCE= VGE, Tvj= 25°C<br>VGEth<br>5,25<br>5,80<br>6,35<br>V<br>Gateladung<br>Gatecharge<br>VGE= -15 V ... +15 V<br>QG<br>5,00<br>µC<br>InternerGatewiderstand<br>Internalgateresistor<br>Tvj= 25°C<br>RGint<br>1,3<br>Ω<br>Eingangskapazität<br>Inputcapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cies<br>38,0<br>nF<br>Rückwirkungskapazität<br>Reversetransfercapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cres<br>1,40<br>nF<br>Kollektor-Emitter-Reststrom<br>Collector-emittercut-offcurrent<br>VCE= 1200 V, VGE= 0 V, Tvj= 25°C<br>ICES<br>5,0<br>mA<br>Gate-Emitter-Reststrom<br>Gate-emitterleakagecurrent<br>VCE= 0 V, VGE= 20 V, Tvj= 25°C<br>IGES<br>400<br>nA<br>Einschaltverzögerungszeit,induktiveLast<br>Turn-ondelaytime,inductiveload<br>IC= 600 A, VCE= 600 V<br>VGE= ±15 V<br>RGon= 0,62Ω<br>td on<br>0,17<br>0,18<br>0,18<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Anstiegszeit,induktiveLast<br>Risetime,inductiveload<br>IC= 600 A, VCE= 600 V<br>VGE= ±15 V<br>RGon= 0,62Ω<br>tr<br>0,046<br>0,048<br>0,052<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Abschaltverzögerungszeit,induktiveLast<br>Turn-offdelaytime,inductiveload<br>IC= 600 A, VCE= 600 V<br>VGE= ±15 V<br>RGoff= 0,62Ω<br>td off<br>0,40<br>0,49<br>0,52<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Fallzeit,induktiveLast<br>Falltime,inductiveload<br>IC= 600 A, VCE= 600 V<br>VGE= ±15 V<br>RGoff= 0,62Ω<br>tf<br>0,062<br>0,098<br>0,11<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>EinschaltverlustenergieproPuls<br>Turn-onenergylossperpulse<br>IC= 600 A, VCE= 600 V, LS= 35 nH<br>VGE= ±15 V, di/dt = 11000 A/µs (Tvj= 150°C)<br>RGon= 0,62Ω<br>Eon<br>16,0<br>29,5<br>35,5<br>mJ<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>AbschaltverlustenergieproPuls<br>Turn-offenergylossperpulse<br>IC= 600 A, VCE= 600 V, LS= 35 nH<br>VGE= ±15 V, du/dt = 3300 V/µs (Tvj= 150°C)<br>RGoff= 0,62Ω<br>Eoff<br>45,5<br>70,0<br>78,0<br>mJ<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Kurzschlußverhalten<br>SCdata<br>VGE ≤15 V, VCC= 800 V<br>VCEmax= VCES-LsCE·di/dt<br>ISC<br>2600<br>A<br>Tvj= 150°C<br>tP ≤10 µs,<br>Wärmewiderstand,ChipbisGehäuse<br>Thermalresistance,junctiontocase<br>proIGBT/perIGBT<br>RthJC<br>0,0460 K/W<br>Wärmewiderstand,GehäusebisKühlkörper<br>Thermalresistance,casetoheatsink<br>proIGBT/perIGBT<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)<br>RthCH<br>0,0226<br>K/W<br>TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions<br>Tvj op<br>-40<br>150<br>°C||



|preparedby:CE|dateofpublication:2016-08-08|
|---|---|
|approvedby:MK|revision:V2.2|



2 

> IGBT-ModulIGBT-Module FF600R12KE4 

## Technische�Information�/�Technical�Information 

**==> picture [86 x 38] intentionally omitted <==**

## **Vorläufige�Daten Preliminary�Data** 

## **Diode,�Wechselrichter�/�Diode,�Inverter Höchstzulässige�Werte�/�Maximum�Rated�Values** 

|PeriodischeSpitzensperrspannung<br>Repetitivepeakreversevoltage|Tvj= 25°C|VRRM|1200|1200|1200|V|
|---|---|---|---|---|---|---|
|Dauergleichstrom<br>ContinuousDCforwardcurrent||IF|600|||A|
|PeriodischerSpitzenstrom<br>Repetitivepeakforwardcurrent|tP= 1 ms|IFRM|1200|||A|
|Grenzlastintegral<br>I²t-value|VR= 0 V, tP= 10 ms, Tvj= 125°C<br>VR= 0 V, tP= 10 ms, Tvj= 150°C|I²t|35000<br>33000<br>|||A²s<br>A²s|
|**CharakteristischeWerte/CharacteristicValues**|||min.|typ.|max.||
|Durchlassspannung<br>Forwardvoltage|IF= 600 A, VGE= 0 V<br>IF= 600 A, VGE= 0 V<br>IF= 600 A, VGE= 0 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|VF||1,85<br>1,80<br>1,75|2,45|V<br>V<br>V|
|Rückstromspitze<br>Peakreverserecoverycurrent|IF= 600 A, - diF/dt = 11000 A/µs (Tvj=150°C)<br>VR= 600 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|IRM||535<br>655<br>680||A<br>A<br>A|
|Sperrverzögerungsladung<br>Recoveredcharge|IF= 600 A, - diF/dt = 11000 A/µs (Tvj=150°C)<br>VR= 600 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Qr||50,5<br>94,0<br>110||µC<br>µC<br>µC|
|AbschaltenergieproPuls<br>Reverserecoveryenergy|IF= 600 A, - diF/dt = 11000 A/µs (Tvj=150°C)<br>VR= 600 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Erec||27,0<br>48,5<br>54,5||mJ<br>mJ<br>mJ|
|Wärmewiderstand,ChipbisGehäuse<br>Thermalresistance,junctiontocase|proDiode/perdiode|RthJC|||0,0929|K/W|
|Wärmewiderstand,GehäusebisKühlkörper<br>Thermalresistance,casetoheatsink|proDiode/perdiode<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)|RthCH||0,0303||K/W|
|TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions||Tvj op|-40||150|°C|



prepared�by:�CE approved�by:�MK 

date�of�publication:�2016-08-08 revision:�V2.2 

3 

## Technische�Information�/�Technical�Information 

IGBT-Modul IGBT-Module 

## FF600R12KE4 

**==> picture [86 x 38] intentionally omitted <==**

## **Vorläufige�Daten Preliminary�Data** 

## **Modul�/�Module** 

|**Modul/Module**|||||||
|---|---|---|---|---|---|---|
|Isolations-Prüfspannung<br>Isolationtestvoltage|RMS, f = 50 Hz, t = 1 min.|VISOL|4,0<br>|||kV|
|MaterialModulgrundplatte<br>Materialofmodulebaseplate|||Cu||||
|InnereIsolation<br>Internalisolation|Basisisolierung(Schutzklasse1,EN61140)<br>basicinsulation(class1,IEC61140)||Al2O3||||
|Kriechstrecke<br>Creepagedistance|Kontakt-Kühlkörper/terminaltoheatsink<br>Kontakt-Kontakt/terminaltoterminal||29,0<br>23,0<br>|||mm|
|Luftstrecke<br>Clearance|Kontakt-Kühlkörper/terminaltoheatsink<br>Kontakt-Kontakt/terminaltoterminal||23,0<br>11,0<br>|||mm|
|VergleichszahlderKriechwegbildung<br>Comperativetrackingindex||CTI||> 400|||
||||min.|typ.|max.||
|Modulstreuinduktivität<br>Strayinductancemodule||LsCE||20||nH|
|Modulleitungswiderstand,Anschlüsse-<br>Chip<br>Moduleleadresistance,terminals-chip|TC=25°C,proSchalter/perswitch|RCC'+EE'||0,42||mΩ|
|Lagertemperatur<br>Storagetemperature||Tstg|-40||125|°C|
|Anzugsdrehmomentf.Modulmontage<br>Mountingtorqueformodulmounting|SchraubeM6-Montagegem.gültigerApplikationsschrift<br>ScrewM6-Mountingaccordingtovalidapplicationnote|M|3,00||6,00|Nm|
|Anzugsdrehmomentf.elektr.Anschlüsse<br>Terminalconnectiontorque|SchraubeM6-Montagegem.gültigerApplikationsschrift<br>ScrewM6-Mountingaccordingtovalidapplicationnote|M|2,5|-|5,0|Nm|
|Gewicht<br>Weight||G||340||g|



prepared�by:�CE date�of�publication:�2016-08-08 approved�by:�MK revision:�V2.2 

4 

## Technische�Information�/�Technical�Information 

> IGBT-ModulIGBT-Module FF600R12KE4 

**==> picture [86 x 38] intentionally omitted <==**

## **Vorläufige�Daten Preliminary�Data** 

**Ausgangskennlinie�IGBT,Wechselrichter�(typisch) output�characteristic�IGBT,Inverter�(typical)** IC�=�f�(VCE) VGE�=�15�V 

**Ausgangskennlinienfeld�IGBT,Wechselrichter�(typisch) output�characteristic�IGBT,Inverter�(typical)** IC�=�f�(VCE) Tvj�=�150°C 

**==> picture [484 x 252] intentionally omitted <==**

**----- Start of picture text -----**<br>
1200 1200<br>Tvj = 25°C VGE = 19V<br>1100 Tvj = 125°C 1100 VGE = 17V<br>Tvj = 150°C VGE = 15V<br>1000 1000 VVGEGE = 13V = 11V<br>VGE = 9V<br>900 900<br>800 800<br>700 700<br>600 600<br>500 500<br>400 400<br>300 300<br>200 200<br>100 100<br>0 0<br>0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0<br>VCE [V] VCE [V]<br> [A]  [A]<br>IC IC<br>**----- End of picture text -----**<br>


**Übertragungscharakteristik�IGBT,Wechselrichter�(typisch) transfer�characteristic�IGBT,Inverter�(typical)** IC�=�f�(VGE) VCE�=�20�V 

**Schaltverluste�IGBT,Wechselrichter�(typisch) switching�losses�IGBT,Inverter�(typical)** Eon�=�f�(IC),�Eoff�=�f�(IC) 

VGE�=�±15�V,�RGon�=�0.62� Ω ,�RGoff�=�0.62� Ω ,�VCE�=�600�V 

**==> picture [489 x 288] intentionally omitted <==**

**----- Start of picture text -----**<br>
1200 150<br>1100 T T vj vj  = 25°C  = 125°C 140 EEonon, T, Tvvjj = 150°C= 125°C<br>1000 Tvj = 150°C 130 EEoffoff,, T Tvvjj = 125°C = 150°C<br>120<br>900<br>110<br>800 100<br>90<br>700<br>80<br>600<br>70<br>500<br>60<br>400 50<br>40<br>300<br>30<br>200<br>20<br>100<br>10<br>0 0<br>6 7 8 9 10 11 12 13 0 200 400 600 800 1000 1200<br>VGE [V] IC [A]<br>prepared�by:�CE date�of�publication:�2016-08-08<br>approved�by:�MK revision:�V2.2<br> [A]<br>IC E [mJ]<br>**----- End of picture text -----**<br>


5 

IGBT-Modul IGBT-Module 

## FF600R12KE4 

**==> picture [486 x 596] intentionally omitted <==**

**----- Start of picture text -----**<br>
Eon =f(R),E G off =f(R G) ZthJC =f (t)<br>VGE =+15V,| C =600A,V CE =600V<br>180 0,1<br>170 [e Eon, T en vj = 125°C nn nny an Pp Z thJC  : IGBT ——<br>Eon, Tvj = 150°C° Po<br>160 E off , T vj  = 125 C<br>Eoff, Tvj = 150°C<br>150<br>7 inet ee<br>140<br>130<br>pd val<br>120<br>110<br>a /<br>100 Wa 0,01 /<br>90<br>80<br>70<br>60<br>50<br>/ i: 1 2 3 4<br>40 ri[K/W]: 0,00222 0,00379 0,0361 0,00388<br>τ i[s]: 0,000608 0,00922 0,0552 0,812<br>30<br>20 0,001<br>0 1 2 3 4 5 6 7 0,001 0,01 0,1 1 10<br>RG [ Ω ] t [s]<br>Sicherer Ruckwarts-Arbeitsbereich IGBT,Wechselrichter Durchlasskennlinie der Diode, Wechselrichter (typisch)<br>(RBSOA) forward characteristic of Diode, Inverter (typical)<br>reverse bias safe operating area IGBT,Inverter (RBSOA) IF =f(V F)<br>IC =f(V CE)<br>VGE =415V,R Goff =062 Ω ,T vj =150°C<br>1400 1200<br>IC, Modul Tvj = 25°C<br>IC, Chip 1100 Tvj = 125°C<br>Tvj = 150°C<br>1200<br>1000<br>E Eb af<br>900 ee<br>1000 RARE 4<br>800<br>800 700<br>600<br>600 500 er<br>400 pf jt<br>400 Scere eee on<br>300<br>Pt f<br>200<br>200<br>100<br>0 0 pA —<br>SEReeaevanalit tT tT TA<br>0 200 400 600 800 1000 1200 1400 0,0 0,3 0,6 0,9 1,2 1,5 1,8 2,1 2,4 2,7 3,0<br>VCE  [V] VF [V]<br> [K/W]<br>E [mJ]<br>thJC<br>Z<br> [A]  [A]<br>IC IF<br>**----- End of picture text -----**<br>


6 

## IGBT-Modul IGBT-Module Technische 

## FF600R12KE4 / Technical Information 

**==> picture [483 x 596] intentionally omitted <==**

**----- Start of picture text -----**<br>
Erec =f (I F) Erec =f(R G)<br>RGon =0.62 Ω ,V CE =600V IF =600A,V CE =600V<br>80 80<br>Erec, Tvj = 125°C Erec, Tvj = 125°C<br>Erec, Tvj = 150°C Erec, Tvj = 150°C<br>70 70<br>- ~~ -_7 7<br>60 7 2 60<br>a N<br>7 N<br>50 L 50 N<br>7 ~~<br>7 of ft 7S<br>40 7 7 40 ~~ = 7S<br>/<br>30 4 30<br>/<br>7<br>7<br>20 20<br>10 10<br>0 0<br>0 200 400 600 800 1000 1200 0 1 2 3 4 5 6 7<br>IF [A] RG [ Ω ]<br>Transienter Warmewiderstand Diode, Wechselrichter<br>transient thermal impedance Diode, Inverter<br>ZthJC =f (t)<br>0,1<br>Z thJC  : Diode<br>0,01<br>i: 1 2 3 4<br>ri[K/W]: 0,00594 0,0388 0,0365 0,0117<br>τ i[s]: 0,00073 0,0256 0,0726 0,678<br>0,001<br>0,001 0,01 0,1 1 10<br>t [s]<br>E [mJ] E [mJ]<br> [K/W]<br>thJC<br>Z<br>**----- End of picture text -----**<br>


7 

**==> picture [313 x 43] intentionally omitted <==**

**----- Start of picture text -----**<br>
Technische�Information�/�Technical�Information<br>IGBT-ModulIGBT-Module FF600R12KE4<br>**----- End of picture text -----**<br>


**==> picture [86 x 38] intentionally omitted <==**

**==> picture [477 x 331] intentionally omitted <==**

**----- Start of picture text -----**<br>
Vorläufige�Daten<br>Preliminary�Data<br>Schaltplan�/�Circuit�diagram<br>Gehäuseabmessungen�/�Package�outlines<br>Infineon<br>**----- End of picture text -----**<br>


**==> picture [320 x 27] intentionally omitted <==**

**----- Start of picture text -----**<br>
prepared�by:�CE date�of�publication:�2016-08-08<br>approved�by:�MK revision:�V2.2<br>**----- End of picture text -----**<br>


8 

## IGBT-Modul IGBT-Module 

## FF600R12KE4 

## **Nutzungsbedingungen** 

## **WARNHINWEIS** 

## **WARNINGS** 

9

Updated at April 28, 2026

Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.

About Novapart

Novapart is a B2B electronic component broker specialising in stock shortages and cost reduction. We source hard-to-find parts and identify compliant alternatives across a catalogue of 410,000+ components from 500+ manufacturers.

Learn more →

Stock Shortage Specialist

When a component is unavailable, discontinued or has an unacceptable lead time, we tap into our network of vetted European and Asian distributors to source what you need — without compromising on quality or traceability.

Request a quote →

Compliant Alternatives

We identify pin-to-pin, electrically equivalent substitutes that meet the same certifications (RoHS, AEC-Q100, REACH) as your original specification — validated against datasheets, not just part numbers. Often at a lower cost.

BOM Analysis service →