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FF600R07ME4B11BPSA1
IGBT Module, Dual, 700 A, 1.55 V, 1.8 kW, 150 °C, Module
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: INFINEON
- Product type: IGBT Modules
- SVHC: No SVHC (25-Jun-2025)
- Product Range: EconoDUAL 3
- IGBT Technology: IGBT 4 [Trench/Field Stop]
- IGBT Termination: Press Fit
- Power Dissipation: 1.8kW
- IGBT Configuration: Dual
- Transistor Mounting: Panel
- DC Collector Current: 700A
- Power Dissipation Pd: 1.8kW
- Transistor Case Style: Module
- Operating Temperature Max: 150°C
- Junction Temperature Tj Max: 150°C
- Continuous Collector Current: 700A
- Collector Emitter Voltage Max: 650V
- Collector Emitter Voltage V(br)ceo: 650V
- Collector Emitter Saturation Voltage: 1.55V
- Collector Emitter Saturation Voltage Vce(on): 1.55V
| Delivery and price | |
|---|---|
| Units per pack | 10 |
| Price | 136.96 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
IGBT-Modul IGBT-Module ## FF600R07ME4_B11 VCES = 650V IC nom = 600A / ICRM = 1200A - Hybrid-Nutzfahrzeuge - Motorantriebe - - USV-Systeme - - - - - - - Hohe Kurzschlussrobustheit, selbstlimitierender Kurzschlussstrom - - - T - - - • High Short Circuit Capability, Self Limiting Short - - - T - - - - - Kupferbodenplatte - - - - - - - • - Standardgehäuse - **Digit** 1 ## Technische�Information�/�Technical�Information IGBT-Modul IGBT-Module FF600R07ME4_B11 **==> picture [86 x 38] intentionally omitted <==** ## **IGBT,Wechselrichter�/�IGBT,Inverter** ## **Höchstzulässige�Werte�/�Maximum�Rated�Values** |TechnischeInformation/TechnicalInformation<br>FF600R07ME4_B11<br>IGBT-Modul<br>IGBT-Module|| |---|---| |preparedby:KY<br>approvedby:KV<br>dateofpublication:2014-12-15<br>revision:3.1<br>**IGBT,Wechselrichter/IGBT,Inverter**<br>**HöchstzulässigeWerte/MaximumRatedValues**<br>Kollektor-Emitter-Sperrspannung<br>Collector-emittervoltage<br>Tvj= 25°C<br>VCES<br>650<br>V<br>Kollektor-Dauergleichstrom<br>ContinuousDCcollectorcurrent<br>TC= 60°C, Tvj max= 175°C<br>TC= 25°C, Tvj max= 175°C<br>IC nom<br>IC<br>600<br>700<br>A<br>A<br>PeriodischerKollektor-Spitzenstrom<br>Repetitivepeakcollectorcurrent<br>tP= 1 ms<br>ICRM<br>1200<br>A<br>Gesamt-Verlustleistung<br>Totalpowerdissipation<br>TC= 25°C, Tvj max= 175°C<br>Ptot<br>1800<br>W<br>Gate-Emitter-Spitzenspannung<br>Gate-emitterpeakvoltage<br>VGES<br>+/-20<br>V<br>**CharakteristischeWerte/CharacteristicValues**<br>min.<br>typ.<br>max.<br>Kollektor-Emitter-Sättigungsspannung<br>Collector-emittersaturationvoltage<br>IC= 600 A, VGE= 15 V<br>IC= 600 A, VGE= 15 V<br>IC= 600 A, VGE= 15 V<br>VCE sat<br>1,55<br>1,70<br>1,75<br>1,95<br>V<br>V<br>V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Gate-Schwellenspannung<br>Gatethresholdvoltage<br>IC= 9,60 mA, VCE= VGE, Tvj= 25°C<br>VGEth<br>4,90<br>5,80<br>6,50<br>V<br>Gateladung<br>Gatecharge<br>VGE= -15 V ... +15 V<br>QG<br>6,50<br>µC<br>InternerGatewiderstand<br>Internalgateresistor<br>Tvj= 25°C<br>RGint<br>0,67<br>Ω<br>Eingangskapazität<br>Inputcapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cies<br>37,0<br>nF<br>Rückwirkungskapazität<br>Reversetransfercapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cres<br>1,10<br>nF<br>Kollektor-Emitter-Reststrom<br>Collector-emittercut-offcurrent<br>VCE= 650 V, VGE= 0 V, Tvj= 25°C<br>ICES<br>1,0<br>mA<br>Gate-Emitter-Reststrom<br>Gate-emitterleakagecurrent<br>VCE= 0 V, VGE= 20 V, Tvj= 25°C<br>IGES<br>100<br>nA<br>Einschaltverzögerungszeit,induktiveLast<br>Turn-ondelaytime,inductiveload<br>IC= 600 A, VCE= 300 V<br>VGE= ±15 V<br>RGon= 1,8Ω<br>td on<br>0,12<br>0,13<br>0,13<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Anstiegszeit,induktiveLast<br>Risetime,inductiveload<br>IC= 600 A, VCE= 300 V<br>VGE= ±15 V<br>RGon= 1,8Ω<br>tr<br>0,12<br>0,12<br>0,12<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Abschaltverzögerungszeit,induktiveLast<br>Turn-offdelaytime,inductiveload<br>IC= 600 A, VCE= 300 V<br>VGE= ±15 V<br>RGoff= 0,33Ω<br>td off<br>0,43<br>0,46<br>0,46<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Fallzeit,induktiveLast<br>Falltime,inductiveload<br>IC= 600 A, VCE= 300 V<br>VGE= ±15 V<br>RGoff= 0,33Ω<br>tf<br>0,08<br>0,11<br>0,11<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>EinschaltverlustenergieproPuls<br>Turn-onenergylossperpulse<br>IC= 600 A, VCE= 300 V, LS= 30 nH<br>VGE= ±15 V, di/dt = 4500 A/µs (Tvj= 150°C)<br>RGon= 1,8Ω<br>Eon<br>7,00<br>9,40<br>9,70<br>mJ<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>AbschaltverlustenergieproPuls<br>Turn-offenergylossperpulse<br>IC= 600 A, VCE= 300 V, LS= 30 nH<br>VGE= ±15 V, du/dt = 3200 V/µs (Tvj= 150°C)<br>RGoff= 0,33Ω<br>Eoff<br>35,5<br>39,5<br>40,5<br>mJ<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Kurzschlußverhalten<br>SCdata<br>VGE ≤15 V, VCC= 360 V<br>VCEmax= VCES-LsCE·di/dt<br>ISC<br>2700<br>A<br>Tvj= 150°C<br>tP ≤10 µs,<br>Wärmewiderstand,ChipbisGehäuse<br>Thermalresistance,junctiontocase<br>proIGBT/perIGBT<br>RthJC<br>0,083 K/W<br>Wärmewiderstand,GehäusebisKühlkörper<br>Thermalresistance,casetoheatsink<br>proIGBT/perIGBT<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)<br>RthCH<br>0,04<br>K/W<br>TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions<br>Tvj op<br>-40<br>150<br>°C|| 2 IGBT-Modul IGBT-Module FF600R07ME4_B11 ## Technische�Information�/�Technical�Information **==> picture [86 x 38] intentionally omitted <==** ## **Diode,�Wechselrichter�/�Diode,�Inverter** ## **Höchstzulässige�Werte�/�Maximum�Rated�Values** |PeriodischeSpitzensperrspannung<br>Repetitivepeakreversevoltage|Tvj= 25°C|VRRM|650|V| |---|---|---|---|---| |Dauergleichstrom<br>ContinuousDCforwardcurrent||IF|600|A| |PeriodischerSpitzenstrom<br>Repetitivepeakforwardcurrent|tP= 1 ms|IFRM|1200|A| |Grenzlastintegral<br>I²t-value|VR= 0 V, tP= 10 ms, Tvj= 125°C<br>VR= 0 V, tP= 10 ms, Tvj= 150°C|I²t|19500<br>17500<br>|A²s<br>A²s| ## **Charakteristische�Werte�/�Characteristic�Values** |||||||| |---|---|---|---|---|---|---| |**CharakteristischeWerte/CharacteristicValues**|||min.|typ.|max.|| |Durchlassspannung<br>Forwardvoltage|IF= 600 A, VGE= 0 V<br>IF= 600 A, VGE= 0 V<br>IF= 600 A, VGE= 0 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|VF||1,55<br>1,50<br>1,45|1,95|V<br>V<br>V| |Rückstromspitze<br>Peakreverserecoverycurrent|IF= 600 A, - diF/dt = 4500 A/µs (Tvj=150°C)<br>VR= 300 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|IRM||185<br>285<br>310||A<br>A<br>A| |Sperrverzögerungsladung<br>Recoveredcharge|IF= 600 A, - diF/dt = 4500 A/µs (Tvj=150°C)<br>VR= 300 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Qr||13,5<br>30,0<br>36,5||µC<br>µC<br>µC| |AbschaltenergieproPuls<br>Reverserecoveryenergy|IF= 600 A, - diF/dt = 4500 A/µs (Tvj=150°C)<br>VR= 300 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Erec||4,10<br>8,70<br>10,0||mJ<br>mJ<br>mJ| |Wärmewiderstand,ChipbisGehäuse<br>Thermalresistance,junctiontocase|proDiode/perdiode|RthJC|||0,145|K/W| |Wärmewiderstand,GehäusebisKühlkörper<br>Thermalresistance,casetoheatsink|proDiode/perdiode<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)|RthCH||0,042||K/W| |TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions||Tvj op|-40||150|°C| ## **NTC-Widerstand�/�NTC-Thermistor** ## **Charakteristische�Werte�/�Characteristic�Values** |**NTC-Widerstand/NTC-Thermistor**<br>|**NTC-Widerstand/NTC-Thermistor**<br>|||||| |---|---|---|---|---|---|---| |**CharakteristischeWerte/CharacteristicValues**|||min.|typ.|max.|| |Nennwiderstand<br>Ratedresistance|TC= 25°C|R25||5,00||kΩ| |AbweichungvonR100<br>DeviationofR100|TC= 100°C, R100= 493Ω|∆R/R|-5||5|%| |Verlustleistung<br>Powerdissipation|TC= 25°C|P25|||20,0|mW| |B-Wert<br>B-value|R2= R25exp [B25/50(1/T2- 1/(298,15 K))]|B25/50||3375||K| |B-Wert<br>B-value|R2= R25exp [B25/80(1/T2- 1/(298,15 K))]|B25/80||3411||K| |B-Wert<br>B-value|R2= R25exp [B25/100(1/T2- 1/(298,15 K))]|B25/100||3433||K| Angaben�gemäß�gültiger�Application�Note. Specification�according�to�the�valid�application�note. prepared�by:�KY date�of�publication:�2014-12-15 approved�by:�KV revision:�3.1 3 IGBT-Modul IGBT-Module FF600R07ME4_B11 ## Technische�Information�/�Technical�Information **==> picture [86 x 38] intentionally omitted <==** ## **Modul�/�Module** |**Modul/Module**||||||| |---|---|---|---|---|---|---| |Isolations-Prüfspannung<br>Isolationtestvoltage|RMS, f = 50 Hz, t = 1 min.|VISOL|2,5|||kV| |MaterialModulgrundplatte<br>Materialofmodulebaseplate|||Cu|||| |InnereIsolation<br>Internalisolation|Basisisolierung(Schutzklasse1,EN61140)<br>basicinsulation(class1,IEC61140)||Al2O3|||| |Kriechstrecke<br>Creepagedistance|Kontakt-Kühlkörper/terminaltoheatsink<br>Kontakt-Kontakt/terminaltoterminal||14,5<br>13,0|||mm| |Luftstrecke<br>Clearance|Kontakt-Kühlkörper/terminaltoheatsink<br>Kontakt-Kontakt/terminaltoterminal||12,5<br>10,0|||mm| |VergleichszahlderKriechwegbildung<br>Comperativetrackingindex||CTI||> 200||| ||||min.|typ.|max.|| |Modulstreuinduktivität<br>Strayinductancemodule||LsCE||20||nH| |Modulleitungswiderstand,Anschlüsse-<br>Chip<br>Moduleleadresistance,terminals-chip|TC=25°C,proSchalter/perswitch|RCC'+EE'||1,00||mΩ| |Lagertemperatur<br>Storagetemperature||Tstg|-40||125|°C| |Anzugsdrehmomentf.Modulmontage<br>Mountingtorqueformodulmounting|SchraubeM5-Montagegem.gültigerApplikationsschrift<br>ScrewM5-Mountingaccordingtovalidapplicationnote|M|3,00||6,00|Nm| |Anzugsdrehmomentf.elektr.Anschlüsse<br>Terminalconnectiontorque|SchraubeM6-Montagegem.gültigerApplikationsschrift<br>ScrewM6-Mountingaccordingtovalidapplicationnote|M|3,0|-|6,0|Nm| |Gewicht<br>Weight||G||345||g| prepared�by:�KY date�of�publication:�2014-12-15 approved�by:�KV revision:�3.1 4 IGBT-Modul IGBT-Module ## FF600R07ME4_B11 **==> picture [489 x 596] intentionally omitted <==** **----- Start of picture text -----**<br> IC =f(V CE) IC =f(V CE)<br>VGE =15V Tvj = 150°C<br>1200 1200<br>Tvj = 25°C VGE = 19V<br>[ee Tvj = 125°C | ee | e VGE e = 17V cee Zn<br>Tvj = 150°C VGE = 15V<br>1000 1000 VGE = 13V<br>Eee Piee a | tt<br>VGE = 11V<br>p e VGE = 9V PASI : E<br>v | T t |<br>800 SERRREREP AZ 800 TT =<br>27000 eee ee [e] [e] [e]<br>PEEAber Le<br>ii /<br>600 600<br>iG ty<br>SERREES Re eee eee<br>SERREEP iORR eee ‘Ae<br>400 400<br>SRRREE —<br>[e] [e]<br>200 200<br>PEP [TTA] EER Ca e<br>EEREBEEZ JAl\oiliit)a Ei [wi}] f<br>0 0<br>a AREER iF; | tt<br>0,0 0,4 0,8 1,2 1,6 2,0 2,4 2,8 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0<br>VCE [V] VCE [V]<br>Ubertragungscharakteristik IGBT,Wechselrichter (typisch) Schaltverluste IGBT,Wechselrichter (typisch)<br>transfer characteristic IGBT,Inverter (typical) switching losses IGBT, Inverter (typical)<br>IC =f(V GE) Eon =f(l),E C off =f(I C)<br>VCE =20V VGE =+15V,R Gon =18 Ω ,R Goff =0.33 Ω ,V CE =300V<br>1200 100<br>Tvj = 25°C Eon, Tvj = 125°C<br>Mm Tvj = 125°C LL Mm Eoff lili , Tvj = 125°C<br>Tvj = 150°C Eon, Tvj = 150°C<br>1000 Eoff, Tvj = 150°C<br>80<br>po} be [E SERRE<br>Oe<br>800<br>fs [ee] t [ee] t :<br>60<br>PP eee vey L L<br>ee eee<br>600<br>eeee 40 eee eee<br>jp v<br>400<br>ip yt of PRT<br>20<br>200<br>ee, Ae eeeee<br>| | er/ | Petwet | | |eeeee<br>poe pet<br>0 0<br>oTtt<br>5 6 7 8 9 10 11 12 0 200 400 600 800 1000 1200<br>VGE [V] IC [A]<br> [A] [A]<br>IC IC<br> [A]<br>IC E [mJ]<br>**----- End of picture text -----**<br> 5 ## IGBT-Modul IGBT-Module Technische Information FF600R07ME4_B11 / Technical Information **==> picture [486 x 596] intentionally omitted <==** **----- Start of picture text -----**<br> Eon =f(R),E G off =f(R G) ZthJC = f(t)<br>VGE =+15V,1| C =600A,V CE =300V<br>160 1<br>Eon, Tvj = 125°C ZthJC : IGBT<br>Eoff, Tvj = 125°C<br>140 | Eon, Tvj = 150°C eae ooa o<br>| Eoff, Tvj = 150°C ee ee |<br>ee || LU CCC C n<br>120 [a] |||<br>A [a] el 0,1 0 A<br>100<br>eee eee aCoon e eee<br>Hf Coie iso LSC<br>80<br>ft At | Con Cone Ceo<br>Sea eae ST Tt TE<br>60<br>0,01<br>| [|] ffze| | | | ll aePEM TE eeEST eeLTA Tl<br>40<br>eee TAL TT TT | Te nett<br>po of Y | ft | Pt cama i: 1 2 3 4<br>20 ri[K/W]: 0,00593 0,00831 0,06154 0,00625<br>FSA ooo τ i[s]: 0,00032 0,00598 0,03466 0,73105<br>0 0,001<br>0 2 4 6 8 10 12 14 16 18 0,0001 0,001 0,01 0,1 1 10<br>RG [ Ω ] t [s]<br>Sicherer Ruckwarts-Arbeitsbereich IGBT,Wechselrichter Durchlasskennlinie der Diode, Wechselrichter (typisch)<br>(RBSOA) forward characteristic of Diode, Inverter (typical)<br>reverse bias safe operating area IGBT,Inverter (RBSOA) IF =f(V F)<br>IC =f(V CE)<br>VGE 0 V,R Goff +=0.33 Ω ,T vj =150°C<br>1400 1200<br>IC, Modul Tvj = 25°C<br>IC, Chip Tvj = 125°C<br>= mH Leite.<br>1200 Tvj = 150°C<br>1000<br>1000<br>PCO ) ep ee<br>800<br>800<br>Se eeeeeeees<br>600<br>CECE in<br>600<br>RC) FEREEEGIEE<br>400<br>COC FeeEReyzre<br>400<br>COLL) 200 epee<br>200 PEEL), Eee<br>0 0 th<br>0 100 200 300 400 500 600 700 0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6 1,8 2,0<br>VCE [V] VF [V]<br> [K/W]<br>E [mJ]<br>thJC<br>Z<br> [A] [A]<br>IC IF<br>**----- End of picture text -----**<br> 6 IGBT-Modul IGBT-Module ## FF600R07ME4_B11 **==> picture [487 x 596] intentionally omitted <==** **----- Start of picture text -----**<br> Erec =f(I F) Erec =f(R G)<br>RGon t'5 Ω ,V CE =300V IF = 600A, V CE = 300 V<br>16 16<br>14 a EErecrec, T, Tvjvj = 125°C = 150°C 14 EErecrec, T, Tvjvj = 125°C = 150°C<br>12 TL ee 12 ee<br>10 tit tat 10 ELE ETT<br>ecere} LP EE EE<br>8 8<br>LiberirrTEP LEEEE<br>6 6<br>4 WOT 4 LENE EEE EL<br>PEPEEEPe LESSEE<br>2 2<br>Cr) = OCSEee<br>0 0<br>0 200 400 600 800 1000 1200 0 2 4 6 8 10 12 14 16 18<br>IF [A] RG [ Ω ]<br>Transienter Warmewiderstand Diode, Wechselrichter NTC-Widerstand-Temperaturkennlinie (typisch)<br>transient thermal impedance Diode, Inverter NTC-Thermistor-temperature characteristic (typical)<br>ZthJC =f (t) R=f(T)<br>1 100000<br>Se ZthJC : Diode eee es t pe Rtyp<br>PTLN TT TETTTT TTTET TTTTT aa e eeeeeee ee<br>a a A e e<br>0,1 ULM|Sesa eo ei aes yeaeeemea eTel 10000 ESKLNTes NN [LE] se ee<br>ee a a Ne a ee<br>| PN<br>a ee<br>UU MERU MERIUTIORARITIOROIl 2 ee eee<br>0,01 YaNT 1000 EN<br>a | el NS<br>PTa [TT] TTT ae TT ee lll TT aa eeeeeeee<br>i: 1 2 3 4<br>ri[K/W]: 0,01483 0,01987 0,09784 0,00902<br>2 τ i[s]: 0,00026 0,00612 a 0,03389 0,59044 | ee<br>0,001 |Amm o «=| 100 |<br>0,0001 0,001 0,01 0,1 1 10 0 20 40 60 80 100 120 140 160<br>t [s] TC [°C]<br>E [mJ] E [mJ]<br>] Ω<br> [K/W]<br>R[<br>thJC<br>Z<br>**----- End of picture text -----**<br> 7 ## Technische�Information�/�Technical�Information IGBT-Modul IGBT-Module FF600R07ME4_B11 **==> picture [86 x 38] intentionally omitted <==** ## **Schaltplan�/�circuit_diagram_headline** **==> picture [140 x 138] intentionally omitted <==** ## **Gehäuseabmessungen�/�package�outlines** **==> picture [17 x 4] intentionally omitted <==** **----- Start of picture text -----**<br> In fin e o n<br>**----- End of picture text -----**<br> **==> picture [37 x 31] intentionally omitted <==** **==> picture [37 x 32] intentionally omitted <==** **==> picture [37 x 31] intentionally omitted <==** **==> picture [37 x 32] intentionally omitted <==** **==> picture [319 x 25] intentionally omitted <==** **----- Start of picture text -----**<br> prepared�by:�KY date�of�publication:�2014-12-15<br>approved�by:�KV revision:�3.1<br>**----- End of picture text -----**<br> 8 **==> picture [61 x 19] intentionally omitted <==** **----- Start of picture text -----**<br> IGBT-Modul<br>IGBT-Module<br>**----- End of picture text -----**<br> ## FF600R07ME4_B11 ## **Nutzungsbedingungen** **==> picture [42 x 8] intentionally omitted <==** **----- Start of picture text -----**<br> application.<br>**----- End of picture text -----**<br> 9
Updated at April 28, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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