FF50R12RT4HOSA1

IGBT Module, Dual [Half Bridge], 50 A, 1.85 V, 285 W, 150 °C, Module

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Manufacturer: INFINEON
Product type: IGBT Modules
Transistor Polarity:N Channel; DC Collector Current:50A; Collector Emitter Saturation Voltage Vce(on):1.85V; Power Dissipation Pd:285W; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor
SVHC: No SVHC (23-Jan-2024)
Product Range: -
IGBT Technology: IGBT 4 [Trench/Field Stop]
IGBT Termination: Stud
Power Dissipation: 285W
IGBT Configuration: Dual [Half Bridge]
Transistor Mounting: Panel
Transistor Polarity: N Channel
DC Collector Current: 50A
Power Dissipation Pd: 285W
Transistor Case Style: Module
Operating Temperature Max: 150°C
Junction Temperature Tj Max: 150°C
Continuous Collector Current: 50A
Collector Emitter Voltage Max: 1.2kV
Collector Emitter Voltage V(br)ceo: 1.2kV
Collector Emitter Saturation Voltage: 1.85V
Collector Emitter Saturation Voltage Vce(on): 1.85V

Delivery and price
Units per pack	1
Price	67.01 €
Current stock	10+
Lead time	30 days

Datasheet

Updated at April 9, 2026