![FF500R17KE4BOSA1 — IGBT Module, Dual [Half Bridge], 500 A, 1.95 V, 150 °C, Module](/media/0/2/F/82E22A4DD3ED0F20.webp)
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FF500R17KE4BOSA1
IGBT Module, Dual [Half Bridge], 500 A, 1.95 V, 150 °C, Module
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: INFINEON
- Product type: IGBT Modules
- Transistor Polarity:Dual N Channel; DC Collector Current:500A; Collector Emitter Saturation Voltage Vce(on):1.95V; Power Dissipation Pd:-; Collector Emitter Voltage V(br)ceo:1.7kV; Trans
- SVHC: No SVHC (25-Jun-2025)
- Product Range: -
- IGBT Technology: IGBT 4 [Trench/Field Stop]
- IGBT Termination: Stud
- Power Dissipation: -
- IGBT Configuration: Dual [Half Bridge]
- Transistor Mounting: Panel
- Transistor Polarity: Dual N Channel
- DC Collector Current: 500A
- Power Dissipation Pd: -
- Transistor Case Style: Module
- Operating Temperature Max: 150°C
- Junction Temperature Tj Max: 150°C
- Continuous Collector Current: 500A
- Collector Emitter Voltage Max: 1.7kV
- Collector Emitter Voltage V(br)ceo: 1.7kV
- Collector Emitter Saturation Voltage: 1.95V
- Collector Emitter Saturation Voltage Vce(on): 1.95V
| Delivery and price | |
|---|---|
| Units per pack | 10 |
| Price | 177.19 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
IGBT-Modul IGBT-Module ## FF500R17KE4 VCES = 1700V IC nom = 500A / ICRM = 1000A - Hochleistungsumrichter - • Motorantriebe - USV-Systeme - • Windgeneratoren - - CEsat - • Sehr grof§e • VCEsat mit - - - - - Standardgehäuse - - - - - - CEsat - - VCEsat - - - - - **Digit** 1 ## Technische�Information�/�Technical�Information > IGBT-ModulIGBT-Module FF500R17KE4 **==> picture [86 x 38] intentionally omitted <==** ## **Vorläufige�Daten Preliminary�Data** |TechnischeInformation/TechnicalInformation<br>FF500R17KE4<br>IGBT-Modul<br>IGBT-Module|| |---|---| |preparedby:CE<br>approvedby:MK<br>dateofpublication:2016-08-09<br>revision:V2.0<br>**VorläufigeDaten**<br>**PreliminaryData**<br>**IGBT,Wechselrichter/IGBT,Inverter**<br>**HöchstzulässigeWerte/MaximumRatedValues**<br>Kollektor-Emitter-Sperrspannung<br>Collector-emittervoltage<br>Tvj= 25°C<br>VCES<br>1700<br>V<br>Kollektor-Dauergleichstrom<br>ContinuousDCcollectorcurrent<br>TC= 100°C, Tvj max= 175°C<br>IC nom<br>500<br>A<br>PeriodischerKollektor-Spitzenstrom<br>Repetitivepeakcollectorcurrent<br>tP= 1 ms<br>ICRM<br>1000<br>A<br>Gate-Emitter-Spitzenspannung<br>Gate-emitterpeakvoltage<br>VGES<br>+/-20<br>V<br>**CharakteristischeWerte/CharacteristicValues**<br>min.<br>typ.<br>max.<br>Kollektor-Emitter-Sättigungsspannung<br>Collector-emittersaturationvoltage<br>IC= 500 A, VGE= 15 V<br>IC= 500 A, VGE= 15 V<br>IC= 500 A, VGE= 15 V<br>VCE sat<br>1,95<br>2,35<br>2,45<br>2,30<br>V<br>V<br>V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Gate-Schwellenspannung<br>Gatethresholdvoltage<br>IC= 20,0 mA, VCE= VGE, Tvj= 25°C<br>VGEth<br>5,20<br>5,80<br>6,40<br>V<br>Gateladung<br>Gatecharge<br>VGE= -15 V ... +15 V<br>QG<br>5,75<br>µC<br>InternerGatewiderstand<br>Internalgateresistor<br>Tvj= 25°C<br>RGint<br>1,3<br>Ω<br>Eingangskapazität<br>Inputcapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cies<br>45,0<br>nF<br>Rückwirkungskapazität<br>Reversetransfercapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cres<br>1,45<br>nF<br>Kollektor-Emitter-Reststrom<br>Collector-emittercut-offcurrent<br>VCE= 1700 V, VGE= 0 V, Tvj= 25°C<br>ICES<br>1,0<br>mA<br>Gate-Emitter-Reststrom<br>Gate-emitterleakagecurrent<br>VCE= 0 V, VGE= 20 V, Tvj= 25°C<br>IGES<br>400<br>nA<br>Einschaltverzögerungszeit,induktiveLast<br>Turn-ondelaytime,inductiveload<br>IC= 500 A, VCE= 900 V<br>VGE= ±15 V<br>RGon= 1,0Ω<br>td on<br>0,22<br>0,25<br>0,26<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Anstiegszeit,induktiveLast<br>Risetime,inductiveload<br>IC= 500 A, VCE= 900 V<br>VGE= ±15 V<br>RGon= 1,0Ω<br>tr<br>0,04<br>0,05<br>0,05<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Abschaltverzögerungszeit,induktiveLast<br>Turn-offdelaytime,inductiveload<br>IC= 500 A, VCE= 900 V<br>VGE= ±15 V<br>RGoff= 1,0Ω<br>td off<br>0,53<br>0,67<br>0,71<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Fallzeit,induktiveLast<br>Falltime,inductiveload<br>IC= 500 A, VCE= 900 V<br>VGE= ±15 V<br>RGoff= 1,0Ω<br>tf<br>0,10<br>0,16<br>0,18<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>EinschaltverlustenergieproPuls<br>Turn-onenergylossperpulse<br>IC= 500 A, VCE= 900 V, LS= 35 nH<br>VGE= ±15 V, di/dt = 10000 A/µs (Tvj= 150°C)<br>RGon= 1,0Ω<br>Eon<br>91,5<br>130<br>140<br>mJ<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>AbschaltverlustenergieproPuls<br>Turn-offenergylossperpulse<br>IC= 500 A, VCE= 900 V, LS= 35 nH<br>VGE= ±15 V, du/dt = 3000 V/µs (Tvj= 150°C)<br>RGoff= 1,0Ω<br>Eoff<br>94,0<br>155<br>170<br>mJ<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Kurzschlußverhalten<br>SCdata<br>VGE ≤15 V, VCC= 1000 V<br>VCEmax= VCES-LsCE·di/dt<br>ISC<br>2000<br>A<br>Tvj= 150°C<br>tP ≤10 µs,<br>Wärmewiderstand,ChipbisGehäuse<br>Thermalresistance,junctiontocase<br>proIGBT/perIGBT<br>RthJC<br>0,0485 K/W<br>Wärmewiderstand,GehäusebisKühlkörper<br>Thermalresistance,casetoheatsink<br>proIGBT/perIGBT<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)<br>RthCH<br>0,0241<br>K/W<br>TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions<br>Tvj op<br>-40<br>150<br>°C|| |preparedby:CE|dateofpublication:2016-08-09| |---|---| |approvedby:MK|revision:V2.0| 2 > IGBT-ModulIGBT-Module FF500R17KE4 ## Technische�Information�/�Technical�Information **==> picture [86 x 38] intentionally omitted <==** ## **Vorläufige�Daten Preliminary�Data** ## **Diode,�Wechselrichter�/�Diode,�Inverter Höchstzulässige�Werte�/�Maximum�Rated�Values** |PeriodischeSpitzensperrspannung<br>Repetitivepeakreversevoltage|Tvj= 25°C|VRRM|1700|1700|1700|V| |---|---|---|---|---|---|---| |Dauergleichstrom<br>ContinuousDCforwardcurrent||IF|500|||A| |PeriodischerSpitzenstrom<br>Repetitivepeakforwardcurrent|tP= 1 ms|IFRM|1000|||A| |Grenzlastintegral<br>I²t-value|VR= 0 V, tP= 10 ms, Tvj= 125°C<br>VR= 0 V, tP= 10 ms, Tvj= 150°C|I²t|33000<br>31500<br>|||A²s<br>A²s| |**CharakteristischeWerte/CharacteristicValues**|||min.|typ.|max.|| |Durchlassspannung<br>Forwardvoltage|IF= 500 A, VGE= 0 V<br>IF= 500 A, VGE= 0 V<br>IF= 500 A, VGE= 0 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|VF||1,95<br>2,10<br>2,15|2,60|V<br>V<br>V| |Rückstromspitze<br>Peakreverserecoverycurrent|IF= 500 A, - diF/dt = 10000 A/µs (Tvj=150°C)<br>VR= 900 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|IRM||770<br>815<br>825||A<br>A<br>A| |Sperrverzögerungsladung<br>Recoveredcharge|IF= 500 A, - diF/dt = 10000 A/µs (Tvj=150°C)<br>VR= 900 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Qr||120<br>195<br>215||µC<br>µC<br>µC| |AbschaltenergieproPuls<br>Reverserecoveryenergy|IF= 500 A, - diF/dt = 10000 A/µs (Tvj=150°C)<br>VR= 900 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Erec||69,0<br>120<br>135||mJ<br>mJ<br>mJ| |Wärmewiderstand,ChipbisGehäuse<br>Thermalresistance,junctiontocase|proDiode/perdiode|RthJC|||0,104|K/W| |Wärmewiderstand,GehäusebisKühlkörper<br>Thermalresistance,casetoheatsink|proDiode/perdiode<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)|RthCH||0,0354||K/W| |TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions||Tvj op|-40||150|°C| prepared�by:�CE approved�by:�MK date�of�publication:�2016-08-09 revision:�V2.0 3 ## Technische�Information�/�Technical�Information IGBT-Modul IGBT-Module ## FF500R17KE4 **==> picture [86 x 38] intentionally omitted <==** ## **Vorläufige�Daten Preliminary�Data** ## **Modul�/�Module** |**Modul/Module**||||||| |---|---|---|---|---|---|---| |Isolations-Prüfspannung<br>Isolationtestvoltage|RMS, f = 50 Hz, t = 1 min.|VISOL|4,0<br>|||kV| |MaterialModulgrundplatte<br>Materialofmodulebaseplate|||Cu|||| |InnereIsolation<br>Internalisolation|Basisisolierung(Schutzklasse1,EN61140)<br>basicinsulation(class1,IEC61140)||Al2O3|||| |Kriechstrecke<br>Creepagedistance|Kontakt-Kühlkörper/terminaltoheatsink<br>Kontakt-Kontakt/terminaltoterminal||29,0<br>23,0<br>|||mm| |Luftstrecke<br>Clearance|Kontakt-Kühlkörper/terminaltoheatsink<br>Kontakt-Kontakt/terminaltoterminal||23,0<br>11,0<br>|||mm| |VergleichszahlderKriechwegbildung<br>Comperativetrackingindex||CTI||> 400||| ||||min.|typ.|max.|| |Modulstreuinduktivität<br>Strayinductancemodule||LsCE||20||nH| |Modulleitungswiderstand,Anschlüsse-<br>Chip<br>Moduleleadresistance,terminals-chip|TC=25°C,proSchalter/perswitch|RCC'+EE'||0,46||mΩ| |Lagertemperatur<br>Storagetemperature||Tstg|-40||125|°C| |Anzugsdrehmomentf.Modulmontage<br>Mountingtorqueformodulmounting|SchraubeM6-Montagegem.gültigerApplikationsschrift<br>ScrewM6-Mountingaccordingtovalidapplicationnote|M|3,00||6,00|Nm| |Anzugsdrehmomentf.elektr.Anschlüsse<br>Terminalconnectiontorque|SchraubeM6-Montagegem.gültigerApplikationsschrift<br>ScrewM6-Mountingaccordingtovalidapplicationnote|M|2,5|-|5,0|Nm| |Gewicht<br>Weight||G||340||g| prepared�by:�CE date�of�publication:�2016-08-09 approved�by:�MK revision:�V2.0 4 ## Technische�Information�/�Technical�Information > IGBT-ModulIGBT-Module FF500R17KE4 **==> picture [86 x 38] intentionally omitted <==** ## **Vorläufige�Daten Preliminary�Data** **Ausgangskennlinie�IGBT,Wechselrichter�(typisch) output�characteristic�IGBT,Inverter�(typical)** IC�=�f�(VCE) VGE�=�15�V **Ausgangskennlinienfeld�IGBT,Wechselrichter�(typisch) output�characteristic�IGBT,Inverter�(typical)** IC�=�f�(VCE) Tvj�=�150°C **==> picture [484 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 1000 1000<br>900 TTTvjvvjj = 25°C = 12 = 150°C5°C 900 VVVGEGEGE = 20V = 1 = 12 V5V<br>VGE = 10V<br>800 800 VVGEGE = 9V = 8V<br>700 700<br>600 600<br>500 500<br>400 400<br>300 300<br>200 200<br>100 100<br>0 0<br>0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0<br>VCE [V] VCE [V]<br> [A] [A]<br>IC IC<br>**----- End of picture text -----**<br> **Übertragungscharakteristik�IGBT,Wechselrichter�(typisch) transfer�characteristic�IGBT,Inverter�(typical)** IC�=�f�(VGE) VCE�=�20�V **Schaltverluste�IGBT,Wechselrichter�(typisch) switching�losses�IGBT,Inverter�(typical)** Eon�=�f�(IC),�Eoff�=�f�(IC) VGE�=�±15�V,�RGon�=�1� Ω ,�RGoff�=�1� Ω ,�VCE�=�900�V **==> picture [489 x 288] intentionally omitted <==** **----- Start of picture text -----**<br> 1000 440<br>900 TTTvjvvjj = 25°C = 12 = 150°C5°C 400 E E Eon on off, T , T , Tvj vj vj = 125°C = 150 = 125°C° C<br>Eoff, Tvj = 150°C<br>360<br>800<br>320<br>700<br>280<br>600<br>240<br>500<br>200<br>400<br>160<br>300<br>120<br>200<br>80<br>100 40<br>0 0<br>5 6 7 8 9 10 11 12 13 0 100 200 300 400 500 600 700 800 900 1000<br>VGE [V] IC [A]<br>prepared�by:�CE date�of�publication:�2016-08-09<br>approved�by:�MK revision:�V2.0<br> [A]<br>IC E [mJ]<br>**----- End of picture text -----**<br> 5 IGBT-Modul IGBT-Module ## FF500R17KE4 **==> picture [486 x 596] intentionally omitted <==** **----- Start of picture text -----**<br> Eon =f(R),E G off =f(R G) ZthJC =f (t)<br>VGE =+15V,1 C =500A,V CE =900V<br>400 0,1<br>360 EEEononoff, T,, T Tvjvvjj = 125°C = 1 = 125°C50°C aEe Z thJC : IGBT<br>Eoff, Tvj = 150°C Poe Sy<br>320<br>280<br>/<br>240<br>200 0,01<br>Pt tet} /<br>160<br>120<br>80<br>i: 1 2 3 4<br>ri[K/W]: 0,00217 0,00398 0,0389 0,00342<br>40 τ i[s]: 0,000443 0,00654 0,0552 1,26<br>0 0,001<br>0 1 2 3 4 5 6 7 8 9 10 0,001 0,01 0,1 1 10<br>RG [ Ω ] t [s]<br>Sicherer Ruckwarts-Arbeitsbereich IGBT,Wechselrichter Durchlasskennlinie der Diode, Wechselrichter (typisch)<br>(RBSOA) forward characteristic of Diode, Inverter (typical)<br>reverse bias safe operating area IGBT,Inverter (RBSOA) IF =f(V F)<br>IC =f(V CE)<br>VGE =415V,R Goff =1 Ω ,T vj =150°C<br>1200 1000<br>IICC, Modul, Chip 900 e TTT e vjvvjj = 25°C = 12 = 150°C5°C 7<br>1000 = | [#-<br>800<br>700<br>800<br>600<br>600 500 /<br>/<br>400<br>400<br>300<br>200<br>200<br>100<br>0 0<br>LEE po<br>0 200 400 600 800 1000 1200 1400 1600 1800 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5<br>VCE [V] VF [V]<br> [K/W]<br>E [mJ]<br>thJC<br>Z<br> [A] [A]<br>IC IF<br>**----- End of picture text -----**<br> 6 IGBT-Modul IGBT-Module ## FF500R17KE4 **==> picture [485 x 279] intentionally omitted <==** **----- Start of picture text -----**<br> Erec =f (I F) Erec =f(R G)<br>RGon =1 Ω ,V CE =900V IF =500A,V CE =900V<br>180 160<br>Erec, Tvj = 125°C Erec, Tvj = 125°C<br>Erec, Tvj = 150°C Erec, Tvj = 150°C<br>160<br>140<br>140 ~<br>a7 120<br>120<br>Wa a anne<br>100<br>4 a<a — at ee —_<br>100<br>ee 80 |<br>80<br>60<br>60 /<br>/<br>40<br>40<br>20<br>20<br>0 0<br>0 100 200 300 400 500 600 700 800 900 1000 0 1 2 3 4 5 6 7 8 9 10<br>IF [A] RG [ Ω ]<br>E [mJ] E [mJ]<br>**----- End of picture text -----**<br> **==> picture [238 x 280] intentionally omitted <==** **----- Start of picture text -----**<br> ZthJC = f(t)<br>1<br>ZthJC : Diode<br>0,1 fna em |<br>PO TTA<br>eM<br>0,01<br>le ELI AE<br>PEE<br>a<br>PO<br>i: 1 2 3 4<br>ti ri[K/W]: 0,00767 0,0414 0,0459 0,009<br>τ i[s]: 0,000867 0,0247 0,0779 0,968<br>0,001<br>0,001 0,01 0,1 1 10<br>t [s]<br> [K/W]<br>thJC<br>Z<br>**----- End of picture text -----**<br> 7 **==> picture [313 x 43] intentionally omitted <==** **----- Start of picture text -----**<br> Technische�Information�/�Technical�Information<br>IGBT-ModulIGBT-Module FF500R17KE4<br>**----- End of picture text -----**<br> **==> picture [86 x 38] intentionally omitted <==** **==> picture [477 x 331] intentionally omitted <==** **----- Start of picture text -----**<br> Vorläufige�Daten<br>Preliminary�Data<br>Schaltplan�/�Circuit�diagram<br>Gehäuseabmessungen�/�Package�outlines<br>Infineon<br>**----- End of picture text -----**<br> **==> picture [320 x 27] intentionally omitted <==** **----- Start of picture text -----**<br> prepared�by:�CE date�of�publication:�2016-08-09<br>approved�by:�MK revision:�V2.0<br>**----- End of picture text -----**<br> 8 ## IGBT-Modul IGBT-Module ## FF500R17KE4 ## **Nutzungsbedingungen** ## **WARNHINWEIS** ## **WARNINGS** 9
Updated at April 28, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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