![FF450R45T3E4B5BPSA1 — IGBT Module, Dual [Half Bridge], 450 A, 2.35 V, 1500 kW, 150 °C, Module](/media/7/2/9/7EDC1164D2EB0927.webp)
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FF450R45T3E4B5BPSA1
IGBT Module, Dual [Half Bridge], 450 A, 2.35 V, 1500 kW, 150 °C, Module
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- Manufacturer: INFINEON
- Product type: IGBT Modules
- SVHC: No SVHC (25-Jun-2025)
- Product Range: XHP 3 Series
- IGBT Technology: IGBT 4 [Trench/Field Stop]
- IGBT Termination: Screw
- Power Dissipation: 1500kW
- IGBT Configuration: Dual [Half Bridge]
- Transistor Mounting: Panel
- Transistor Case Style: Module
- Operating Temperature Max: 150°C
- Continuous Collector Current: 450A
- Collector Emitter Voltage Max: 4.5kV
- Collector Emitter Saturation Voltage: 2.35V
| Delivery and price | |
|---|---|
| Units per pack | 1 |
| Price | 1462.0 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
**FF450R45T3E4_B5** **XHP[™] 3 module** ## **XHP[™] 3 module with Trench/Fieldstop IGBT4 and emitter controlled 4 diode** ## **Features** - Electrical features - VCES = 4500 V - IC nom = 450 A / ICRM = 900 A - High dynamic robustness - Low V CE,sat - Trench IGBT 4 - Mechanical features - Package with CTI > 600 - AlSiC base plate for increased thermal cycling capability - High creepage and clearance distances - Housing material compliant with the classification R23 (HL3) of the EN45545-2 “Fire protection of railway vehicles” - Package with enhanced insulation of 10.4 kV AC 60 s ## **Potential applications** - Traction drives - Medium-voltage converters ## **Product validation** - Qualified for industrial applications according to the relevant tests of IEC 60747, 60749 and 60068 ## **Description** Please read the sections "Important notice" and "Warnings" at the end of this document Datasheet www.infineon.com Revision 1.00 2023-06-15 **FF450R45T3E4_B5 XHP[™] 3 module** **Table of contents** **==> picture [105 x 47] intentionally omitted <==** ## **Table of contents** ||**Description**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1| |---|---| ||**Features**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1| ||**Potential applications**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1| ||**Product validation**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1| ||**Table of contents**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2| |**1**|**Package**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3| |**2**|**IGBT, Inverter**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3| |**3**|**Diode, Inverter**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5| |**4**|**Characteristics diagrams**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7| |**5**|**Circuit diagram**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11| |**6**|**Package outlines**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12| |**7**|**Module label code**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13| ||**Revision history**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14| ||**Disclaimer**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15| Datasheet Revision 1.00 2023-06-15 2 **FF450R45T3E4_B5 XHP[™] 3 module** **==> picture [105 x 47] intentionally omitted <==** ## **1 Package** ## **1 Package** |**1**<br>**Package**|**1**<br>**Package**|**1**<br>**Package**|**1**<br>**Package**|**1**<br>**Package**| |---|---|---|---|---| |**Table 1**<br>**Insulation coordination**||||| |**Parameter**|**Symbol**|**Note or test condition**|**Values**|**Unit**| |Isolation test voltage|_V_ISOL|RMS, f = 50 Hz,_t_= 1 min|10.4|kV| |Partial discharge<br>extinction voltage|_V_isol|RMS, f = 50 Hz, QPDtyp. 10 pC|5.1|kV| |DC stability|_V_CE(D)|Tvj= 25 °C, 100 Fit|2900|V| |Material of module<br>baseplate|||AlSiC|| |Creepage distance|_d_Creep|terminal to heatsink|53.0|mm| |Creepage distance|_d_Creep|terminal to terminal|53.0|mm| |Clearance|_d_Clear|terminal to heatsink|36.0|mm| |Clearance|_d_Clear|terminal to terminal|26.0|mm| |Comparative tracking<br>index|_CTI_||> 600|| |||||| |**Table 2**<br>**Characteristic values**||||| |**Parameter**|**Symbol**|**Note or test condition**||**Values**|**Values**|**Values**|**Unit**| |---|---|---|---|---|---|---|---| |||||**Min.**|**Typ.**|**Max.**|| |Stray inductance module|_L_sCE||||25||nH| |Module lead resistance,<br>terminals - chip|_R_AA'+CC'|TC= 25 °C, per switch|||0.33||mΩ| |Module lead resistance,<br>terminals - chip|_R_CC'+EE'|TC= 25 °C, per switch|||0.42||mΩ| |Storage temperature|_T_stg|||-40||150|°C| |Mounting torque for<br>module mounting|_M_|- Mounting according to<br>valid application note|M6, Screw|4.25||5.75|Nm| |Terminal connection<br>torque|_M_|- Mounting according to<br>valid application note|M3, Screw|0.9||1.1|Nm| ||||M8, Screw|8||10|| |Weight|_G_||||700||g| ## **2 IGBT, Inverter** **Table 3 Maximum rated values** |**Parameter**|**Symbol**|**Note or test condition**||**Values**|**Unit**| |---|---|---|---|---|---| |Collector-emitter voltage|_V_CES||_T_vj= -40 °C|4300|V| ||||_T_vj= 25 °C|4500|| ||||_T_vj= 150 °C|4500|| **(table continues...)** Datasheet Revision 1.00 2023-06-15 3 **FF450R45T3E4_B5 XHP[™] 3 module** **==> picture [105 x 47] intentionally omitted <==** ## **2 IGBT, Inverter** |**Table 3**<br>**(continued) Maximum rated values**|**Table 3**<br>**(continued) Maximum rated values**|**Table 3**<br>**(continued) Maximum rated values**|**Table 3**<br>**(continued) Maximum rated values**|**Table 3**<br>**(continued) Maximum rated values**|**Table 3**<br>**(continued) Maximum rated values**| |---|---|---|---|---|---| |**Parameter**|**Symbol**|**Note or test condition**||**Values**|**Unit**| |Continuous DC collector<br>current|_I_CDC|_T_vj max= 150 °C|_T_C= 100 °C|450|A| |Repetitive peak collector<br>current|_I_CRM|tplimited by Tvj op||900|A| |Gate-emitter peak voltage|_V_GES|||±20|V| |**Table 4**<br>**Characteristic values**|**Table 4**<br>**Characteristic values**|**Table 4**<br>**Characteristic values**|||||| |---|---|---|---|---|---|---|---| |**Parameter**|**Symbol**|**Note or test condition**||**Values**|||**Unit**| |||||**Min.**|**Typ.**|**Max.**|| |Collector-emitter<br>saturation voltage|_V_CE sat|_I_C= 450 A,_V_GE= 15 V|_T_vj= 25 °C||2.35|2.80|V| ||||_T_vj= 125 °C||2.85|3.40|| ||||_T_vj= 150 °C||2.95|3.50|| |Gate threshold voltage|_V_GEth|_I_C= 39 mA, VCE= VGE,_T_vj=|25 °C|5.5|6|6.5|V| |Gate charge|_Q_G|_V_GE= ±15 V,_V_CC= 2800 V|||12.1||µC| |Internal gate resistor|_R_Gint|_T_vj= 25 °C|||1.5||Ω| |Input capacitance|_C_ies|_f_= 100 kHz,_T_vj= 25 °C,_V_CE= 25 V,_V_GE= 0 V|||76.6||nF| |Reverse transfer<br>capacitance|_C_res|_f_= 100 kHz,_T_vj= 25 °C,_V_CE= 25 V,_V_GE= 0 V|||1.4||nF| |Collector-emitter cut-of<br>current|_I_CES|_V_CE= 4500 V,_V_GE= 0 V|_T_vj= 25 °C|||5|mA| |Gate-emitter leakage<br>current|_I_GES|_V_CE= 0 V,_V_GE= 20 V,_T_vj= 25 °C||||400|nA| |Turn-on delay time<br>(inductive load)|_t_don|_I_C= 450 A,_V_CC= 2800 V,<br>_V_GE= ±15 V,_R_Gon= 0.39 Ω|_T_vj= 25 °C||0.500||µs| ||||_T_vj= 125 °C||0.550||| ||||_T_vj= 150 °C||0.560||| |Rise time (inductive load)|_t_r|_I_C= 450 A,_V_CC= 2800 V,<br>_V_GE= ±15 V,_R_Gon= 0.39 Ω|_T_vj= 25 °C||0.075||µs| ||||_T_vj= 125 °C||0.085||| ||||_T_vj= 150 °C||0.090||| |Turn-of delay time<br>(inductive load)|_t_dof|_I_C= 450 A,_V_CC= 2800 V,<br>_V_GE= ±15 V,_R_Gof= 22 Ω|_T_vj= 25 °C||8.000||µs| ||||_T_vj= 125 °C||8.500||| ||||_T_vj= 150 °C||8.600||| |Fall time (inductive load)|_t_f|_I_C= 450 A,_V_CC= 2800 V,<br>_V_GE= ±15 V,_R_Gof= 22 Ω|_T_vj= 25 °C||1.300||µs| ||||_T_vj= 125 °C||2.350||| ||||_T_vj= 150 °C||2.700||| |Turn-on time (resistive<br>load)|_t_on_R|_I_C= 500 A,_V_CC= 2000 V,<br>_V_GE= ±15 V,_R_Gon= 0.39 Ω|_T_vj= 25 °C|1.40|||µs| **(table continues...)** Datasheet Revision 1.00 2023-06-15 4 **FF450R45T3E4_B5 XHP[™] 3 module** **==> picture [105 x 47] intentionally omitted <==** ## **3 Diode, Inverter** |**Table 4**<br>**(continued) Characteristic values**|**Table 4**<br>**(continued) Characteristic values**|**Table 4**<br>**(continued) Characteristic values**|||||| |---|---|---|---|---|---|---|---| |**Parameter**|**Symbol**|**Note or test condition**||**Values**|||**Unit**| |||||**Min.**|**Typ.**|**Max.**|| |Turn-on energy loss per<br>pulse|_E_on|_I_C= 450 A,_V_CC= 2800 V,<br>_L_σ= 75 nH,_V_GE= ±15 V,<br>_R_Gon= 0.39 Ω, di/dt =<br>4900 A/µs (Tvj= 150 °C)|_T_vj= 25 °C||1000||mJ| ||||_T_vj= 125 °C||1540||| ||||_T_vj= 150 °C||1740||| |Turn-of energy loss per<br>pulse|_E_of|_I_C= 450 A,_V_CC= 2800 V,<br>_L_σ= 75 nH,_V_GE= ±15 V,<br>_R_Gof= 22 Ω, dv/dt = 1080<br>V/µs (Tvj= 150 °C)|_T_vj= 25 °C||1810||mJ| ||||_T_vj= 125 °C||2390||| ||||_T_vj= 150 °C||2580||| |SC data|_I_SC|_V_GE≤ 15 V,_V_CC= 3000 V,<br>VCEmax=VCES-LsCE*di/dt|_t_P≤ 10 µs,<br>_T_vj=150 °C||2000||A| |Thermal resistance,<br>junction to case|_R_thJC|per IGBT||||26.1|K/kW| |Thermal resistance, case to<br>heat sink|_R_thCH|per IGBT,λgrease= 1 W/(m·K)|||27.1||K/kW| |Temperature under<br>switching conditions|_T_vj op|||-40||150|°C| ## **3 Diode, Inverter** |**3**<br>**Diode, Inverter**|**3**<br>**Diode, Inverter**|**3**<br>**Diode, Inverter**|||| |---|---|---|---|---|---| |**Table 5**<br>**Maximum rated values**|||||| |**Parameter**|**Symbol**|**Note or test condition**||**Values**|**Unit**| |Repetitive peak reverse<br>voltage|_V_RRM||_T_vj= -40 °C|4300|V| ||||_T_vj= 25 °C|4500|| ||||_T_vj= 150 °C|4500|| |Continuous DC forward<br>current|_I_F|||450|A| |Repetitive peak forward<br>current|_I_FRM|_t_P= 1 ms||900|A| |I2t - value|_I_2_t_|_t_P= 10 ms,_V_R= 0 V|_T_vj= 125 °C|87.4|kA²s| ||||_T_vj= 150 °C|79.9|| |Maximum power<br>dissipation|_P_RQM||_T_vj= 150 °C|1500|kW| |Minimum turn-on time|_t_onmin|||10|µs| Datasheet Revision 1.00 2023-06-15 5 **FF450R45T3E4_B5 XHP[™] 3 module** **==> picture [105 x 47] intentionally omitted <==** ## **3 Diode, Inverter** |**Table 6**<br>**Characteristic values**|**Table 6**<br>**Characteristic values**|**Table 6**<br>**Characteristic values**|||||| |---|---|---|---|---|---|---|---| |**Parameter**|**Symbol**|**Note or test condition**||**Values**|||**Unit**| |||||**Min.**|**Typ.**|**Max.**|| |Forward voltage|_V_F|_I_F= 450 A,_V_GE= 0 V|_T_vj= 25 °C||2.60|3.05|V| ||||_T_vj= 125 °C||2.50|2.95|| ||||_T_vj= 150 °C||2.45|2.90|| |Peak reverse recovery<br>current|_I_RM|_V_CC= 2800 V,_I_F= 450 A,<br>_V_GE= -15 V, -diF/dt =<br>4900 A/µs (Tvj= 150 °C)|_T_vj= 25 °C||925||A| ||||_T_vj= 125 °C||920||| ||||_T_vj= 150 °C||920||| |Recovered charge|_Q_r|_V_CC= 2800 V,_I_F= 450 A,<br>_V_GE= -15 V, -diF/dt =<br>4900 A/µs (Tvj= 150 °C)|_T_vj= 25 °C||405||µC| ||||_T_vj= 125 °C||780||| ||||_T_vj= 150 °C||900||| |Reverse recovery energy|_E_rec|_V_CC= 2800 V,_I_F= 450 A,<br>_V_GE= -15 V, -diF/dt =<br>4900 A/µs (Tvj= 150 °C)|_T_vj= 25 °C||690||mJ| ||||_T_vj= 125 °C||1400||| ||||_T_vj= 150 °C||1650||| |Thermal resistance,<br>junction to case|_R_thJC|per diode||||44.9|K/kW| |Thermal resistance, case to<br>heat sink|_R_thCH|per diode,λgrease= 1 W/(m·K)|||19.8||K/kW| |Temperature under<br>switching conditions|_T_vj op|||-40||150|°C| Datasheet Revision 1.00 2023-06-15 6 **FF450R45T3E4_B5 XHP[™] 3 module** **4 Characteristics diagrams** **==> picture [105 x 47] intentionally omitted <==** ## **4 Characteristics diagrams** **Output characteristic (typical), IGBT, Inverter** IC = f(VCE) VGE = 15 V **Output characteristic field (typical), IGBT, Inverter** IC = f(VCE) T = 150 °C vj **==> picture [540 x 572] intentionally omitted <==** **----- Start of picture text -----**<br> 900 900<br>750 750<br>600 600<br>450 450<br>300 300<br>150 150<br>0 0<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0<br>Transfer characteristic (typical), IGBT, Inverter Gate charge characteristic (typical), IGBT, Inverter<br>IC = f(VGE) VGE = f(QG)<br>VCE = 20 V IC = 450 A, Tvj = 25 °C<br>900 15<br>12<br>750<br>9<br>6<br>600<br>3<br>450 0<br>-3<br>300<br>-6<br>-9<br>150<br>-12<br>0 -15<br>5 6 7 8 9 10 11 12 13 0 1 2 3 4 5 6 7 8 9 10 11 12 13<br>**----- End of picture text -----**<br> Datasheet Revision 1.00 2023-06-15 7 **FF450R45T3E4_B5 XHP[™] 3 module** **4 Characteristics diagrams** **==> picture [105 x 47] intentionally omitted <==** ## **Capacity characteristic (typical), IGBT, Inverter** ## C = f(VCE) f = 100 kHz, VGE = 0 V, Tvj = 25 °C **==> picture [228 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 130<br>120<br>110<br>100<br>90<br>80<br>70<br>60<br>50<br>40<br>30<br>20<br>10<br>0<br>0.1 1 10 100<br>**----- End of picture text -----**<br> ## **Switching times (typical), IGBT, Inverter** ## t = f(RG) IC = 450 A, VCC = 2800 V, VGE = ± 15 V, Tvj = 150 °C **==> picture [228 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 100<br>10<br>1<br>0.1<br>0.01<br>0 5 10 15 20 25 30 35 40 45<br>**----- End of picture text -----**<br> ## **Switching times (typical), IGBT, Inverter** ## t = f(IC) RGoff = 22 Ω, RGon = 0.39 Ω, VCC = 2800 V, VGE = ± 15 V, Tvj = 150 °C **==> picture [229 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 100<br>10<br>1<br>0.1<br>0.01<br>0 150 300 450 600 750 900<br>**----- End of picture text -----**<br> **Switching losses (typical), IGBT, Inverter** E = f(IC) RGoff = 22 Ω, RGon = 0.39 Ω, VCC = 2800 V, VGE = ± 15 V **==> picture [229 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 5000<br>4500<br>4000<br>3500<br>3000<br>2500<br>2000<br>1500<br>1000<br>500<br>0<br>0 150 300 450 600 750 900<br>**----- End of picture text -----**<br> Datasheet Revision 1.00 2023-06-15 8 **FF450R45T3E4_B5 XHP[™] 3 module** **4 Characteristics diagrams** **==> picture [105 x 47] intentionally omitted <==** ## **Switching losses (typical), IGBT, Inverter** ## E = f(RG) IC = 450 A, VCC = 2800 V, VGE = ± 15 V **Reverse bias safe operating area (RBSOA), IGBT, Inverter** **==> picture [43 x 11] intentionally omitted <==** **----- Start of picture text -----**<br> IC = f(VCE)<br>**----- End of picture text -----**<br> RGoff = 22 Ω, VGE = ±15 V, Tvj = 150 °C **==> picture [540 x 557] intentionally omitted <==** **----- Start of picture text -----**<br> 3500 1050<br>3000 900<br>2500 750<br>2000 600<br>1500 450<br>1000 300<br>500 150<br>0 0<br>0 5 10 15 20 25 30 35 40 45 0 500 1000 1500 2000 2500 3000 3500 4000 4500 5000<br>Transient thermal impedance, IGBT, Inverter Forward characteristic (typical), Diode, Inverter<br>Zth = f(t) IF = f(VF)<br>100 900<br>750<br>600<br>10 450<br>300<br>150<br>1 0<br>0.001 0.01 0.1 1 10 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0<br>**----- End of picture text -----**<br> Datasheet Revision 1.00 2023-06-15 9 **FF450R45T3E4_B5 XHP[™] 3 module** **4 Characteristics diagrams** **==> picture [105 x 47] intentionally omitted <==** ## **Switching losses (typical), Diode, Inverter** Erec = f(IF) RGon = 0.39 Ω, VCE = 2800 V **Switching losses (typical), Diode, Inverter** Erec = f(RG) VCE = 2800 V, IF = 450 A **==> picture [540 x 572] intentionally omitted <==** **----- Start of picture text -----**<br> 2100 2100<br>1800 1800<br>1500 1500<br>1200 1200<br>900 900<br>600 600<br>300 300<br>0 0<br>0 150 300 450 600 750 900 0 1 2 2 3 4 5<br>Safe operating area (SOA), Diode, Inverter Transient thermal impedance, Diode, Inverter<br>IR = f(VR) Zth = f(t)<br>T = 150 °C<br>vj<br>1050 100<br>900<br>750<br>600<br>10<br>450<br>300<br>150<br>0 1<br>0 500 1000 1500 2000 2500 3000 3500 4000 4500 5000 0.001 0.01 0.1 1 10 100<br>**----- End of picture text -----**<br> Datasheet Revision 1.00 2023-06-15 10 **FF450R45T3E4_B5 XHP[™] 3 module** **==> picture [105 x 47] intentionally omitted <==** ## **5 Circuit diagram** **==> picture [541 x 264] intentionally omitted <==** **----- Start of picture text -----**<br> 5 Circuit diagram<br>2<br>7<br>T1<br>D1<br>8<br>9<br>3,4<br>T2<br>D2<br>5<br>6<br>10: NC<br>1<br>**----- End of picture text -----**<br> **Figure 1** Datasheet Revision 1.00 2023-06-15 11 **FF450R45T3E4_B5 XHP[™] 3 module** **==> picture [105 x 47] intentionally omitted <==** ## **6 Package outlines** **==> picture [541 x 458] intentionally omitted <==** **----- Start of picture text -----**<br> 6 Package outlines<br>(99,8)<br>(4x)( � 8,5)<br>C 74<br>63,5<br>(6x) 7mm<br>screwing<br>depth<br>29,5<br>20<br>A<br>0<br>20 � 0,8 A B C<br>(6x)<br>29,5<br>59<br>63,5<br>70<br>(4x) 16mm screwing depth (4x)M8 (4x) (18) � 6,6 � 0,2<br>� 1 A B C<br>(4x)<br>86<br>B<br>( �<br>4,6)(6x) M3<br>43 33,5 22 0 22 33,5 43<br>127 (144) (140)<br>3,1<br>�<br>(18)<br>(21)<br>(3x)<br>0 0,3 0,4 0,4<br> � � �<br>4 36 40<br>**----- End of picture text -----**<br> **Figure 2** Datasheet Revision 1.00 2023-06-15 12 **FF450R45T3E4_B5 XHP[™] 3 module** **==> picture [105 x 47] intentionally omitted <==** ## **7 Module label code** ## **7 Module label code** |**Module label code**|**Module label code**|**Module label code**|**Module label code**|**Module label code**| |---|---|---|---|---| |Code format|Data Matrix||Barcode Code128|| |Encoding|ASCII text||Code Set A|| |Symbol size|16x16||23 digits|| |Standard|IEC24720 and IEC16022||IEC8859-1|| |||||| |Code content|_Content_<br>Module serial number<br>Module material number<br>Production order number<br>Date code (production year)<br>Date code (production week)|_Digit_<br>1 – 5<br>6 - 11<br>12 - 19<br>20 – 21<br>22 – 23||_Example_<br>71549<br>142846<br>55054991<br>15<br>30| |Example|71549142846550549911530<br>71549142846550549911530|||| ## **Figure 3** Datasheet Revision 1.00 2023-06-15 13 **FF450R45T3E4_B5 XHP[™] 3 module** **Revision history** **==> picture [105 x 47] intentionally omitted <==** ## **Revision history** |**Revision history**||| |---|---|---| |**Document revision**|**Date of release**|**Description of changes**| |1.00|2023-06-15|Initial version| Datasheet Revision 1.00 2023-06-15 14 ## **Trademarks** All referenced product or service names and trademarks are the property of their respective owners. **Edition 2023-06-15 Important notice Published by** The information given in this document shall in no event be regarded as a guarantee of conditions or **Infineon Technologies AG** characteristics (“Beschaffenheitsgarantie”). **81726 Munich, Germany** With respect to any examples, hints or any typical values stated herein and/or any information regarding **© 2023 Infineon Technologies AG** the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities **All Rights Reserved.** of any kind, including without limitation warranties of non-infringement of intellectual property rights of any **Do you have a question about any** third party. **aspect of this document?** In addition, any information given in this document is **Email: erratum@infineon.com** subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning **Document reference** customer’s products and any use of the product of **IFX-ABE987-001** Infineon Technologies in customer’s applications. Please note that this product is not qualified according to the AEC Q100 or AEC Q101 documents of the Automotive Electronics Council. ## **Warnings** Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application.
Updated at April 28, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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