![FF450R33T3E3BPSA1 — IGBT Module, Dual [Half Bridge], 450 A, 2.5 V, 150 °C, Module](/media/0/2/4/7AC6004ED1E60420.webp)
Image not available
Illustrative purposes only
FF450R33T3E3BPSA1
IGBT Module, Dual [Half Bridge], 450 A, 2.5 V, 150 °C, Module
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: INFINEON
- Product type: IGBT Modules
- Transistor Polarity:N Channel; DC Collector Current:450A; Collector Emitter Saturation Voltage Vce(on):2.5V; Power Dissipation Pd:-; Collector Emitter Voltage V(br)ceo:3.3kV; Transistor C
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 10Pins
- Product Range: XHP 3
- IGBT Technology: IGBT 3 [Trench/Field Stop]
- IGBT Termination: Stud
- Power Dissipation: -
- IGBT Configuration: Dual [Half Bridge]
- Transistor Mounting: Panel
- Transistor Polarity: N Channel
- DC Collector Current: 450A
- Power Dissipation Pd: -
- Transistor Case Style: Module
- Operating Temperature Max: 150°C
- Junction Temperature Tj Max: 150°C
- Continuous Collector Current: 450A
- Collector Emitter Voltage Max: 3.3kV
- Collector Emitter Voltage V(br)ceo: 3.3kV
- Collector Emitter Saturation Voltage: 2.5V
- Collector Emitter Saturation Voltage Vce(on): 2.5V
| Delivery and price | |
|---|---|
| Units per pack | 1 |
| Price | 1235.4 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
FF450R33T3E3
VCES = 3300V IC nom = 450A / ICRM = 900A
- Mittelspannungsantriebe
- • Motorantriebe • Traktionsumrichter • USV-Systeme • Windgeneratoren
-
-
-
- CEsat
-
- T vj op
- • VCEsat
- AlSiC Bodenplatte für erhöhte thermische Lastwechselfestigkeit
-
-
-
-
-
-
-
-
-
-
- CEsat
-
- T
- VCEsat
- AlSiC base plate for increased thermal cycling capability
-
-
**Digit**
Datasheet www.infineon.com
2018-12-13
FF450R33T3E3
**==> picture [86 x 38] intentionally omitted <==**
|**IGBT,Wechselrichter/IGBT,Inverter**<br>**HöchstzulässigeWerte/MaximumRatedValues**|**IGBT,Wechselrichter/IGBT,Inverter**<br>**HöchstzulässigeWerte/MaximumRatedValues**||||||
|---|---|---|---|---|---|---|
|Kollektor-Emitter-Sperrspannung<br>Collector-emittervoltage|Tvj= -40°C<br>Tvj= 150°C|VCES|3300<br>3300|||V|
|Kollektor-Dauergleichstrom<br>ContinuousDCcollectorcurrent|TC= 100°C, Tvj max= 150°C|ICDC|450|||A|
|PeriodischerKollektor-Spitzenstrom<br>Repetitivepeakcollectorcurrent|tP= 1 ms|ICRM|900|||A|
|Gate-Emitter-Spitzenspannung<br>Gate-emitterpeakvoltage||VGES|+/-20|||V|
|**CharakteristischeWerte/CharacteristicValues**|||min.|typ.|max.||
|Kollektor-Emitter-Sättigungsspannung<br>Collector-emittersaturationvoltage|IC= 450 A<br>VGE= 15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|VCE sat||2,50<br>2,90<br>3,00|2,75<br>3,30|V<br>V<br>V|
|Gate-Schwellenspannung<br>Gatethresholdvoltage|IC= 12,0 mA, VCE= VGE, Tvj= 25°C|VGEth|5,20|5,80|6,40|V|
|Gateladung<br>Gatecharge|VGE= -15 / 15 V, VCE= 1800 V|QG||12,5||µC|
|InternerGatewiderstand<br>Internalgateresistor|Tvj= 25°C|RGint||1,3||Ω|
|Eingangskapazität<br>Inputcapacitance|f = 1000 kHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V|Cies||84,0||nF|
|Rückwirkungskapazität<br>Reversetransfercapacitance|f = 1000 kHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V|Cres||2,00||nF|
|Kollektor-Emitter-Reststrom<br>Collector-emittercut-offcurrent|VCE= 3300 V, VGE= 0 V, Tvj= 25°C|ICES|||5,0|mA|
|Gate-Emitter-Reststrom<br>Gate-emitterleakagecurrent|VCE= 0 V, VGE= 20 V, Tvj= 25°C|IGES|||400|nA|
|Einschaltverzögerungszeit,induktiveLast<br>Turn-ondelaytime,inductiveload|IC= 450 A, VCE= 1800 V<br>VGE= -15 / 15 V<br>RGon= 0,7Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|td on||0,53<br>0,57<br>0,58||µs<br>µs<br>µs|
|Anstiegszeit,induktiveLast<br>Risetime,inductiveload|IC= 450 A, VCE= 1800 V<br>VGE= -15 / 15 V<br>RGon= 0,7Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|tr||0,10<br>0,13<br>0,13||µs<br>µs<br>µs|
|Abschaltverzögerungszeit,induktiveLast<br>Turn-offdelaytime,inductiveload|IC= 450 A, VCE= 1800 V<br>VGE= -15 / 15 V<br>RGoff= 3,3Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|td off||1,71<br>1,86<br>1,92||µs<br>µs<br>µs|
|Fallzeit,induktiveLast<br>Falltime,inductiveload|IC= 450 A, VCE= 1800 V<br>VGE= -15 / 15 V<br>RGoff= 3,3Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|tf||0,13<br>0,24<br>0,27||µs<br>µs<br>µs|
|EinschaltverlustenergieproPuls<br>Turn-onenergylossperpulse|IC= 450 A, VCE= 1800 V, Lσ= 85 nH<br>di/dt = 3650 A/µs (Tvj= 150°C)<br>VGE= -15 / 15 V, RGon= 0,7Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Eon||500<br>765<br>845||mJ<br>mJ<br>mJ|
|AbschaltverlustenergieproPuls<br>Turn-offenergylossperpulse|IC= 450 A, VCE= 1800 V, Lσ= 85 nH<br>du/dt = 2850 V/µs (Tvj= 150°C)<br>VGE= -15 / 15 V, RGoff= 3,3Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Eoff||415<br>610<br>670||mJ<br>mJ<br>mJ|
|Kurzschlußverhalten<br>SCdata|VGE ≤15 V, VCC= 2500 V<br>VCEmax= VCES-LsCE·di/dt<br>Tvj= 150°C<br>tP ≤10 µs,|ISC||1800||A|
|Wärmewiderstand,ChipbisGehäuse<br>Thermalresistance,junctiontocase|proIGBT/perIGBT|RthJC|||28,4|K/kW|
|Wärmewiderstand,GehäusebisKühlkörper<br>Thermalresistance,casetoheatsink|proIGBT/perIGBT<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)|RthCH||17,4||K/kW|
|TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions||Tvj op|-40||150|°C|
2
V�3.1 2018-12-13
Datasheet
FF450R33T3E3
**==> picture [86 x 38] intentionally omitted <==**
|**Diode,Wechselrichter/Diode,Inverter**<br>**HöchstzulässigeWerte/MaximumRatedValues**|**Diode,Wechselrichter/Diode,Inverter**<br>**HöchstzulässigeWerte/MaximumRatedValues**||||||
|---|---|---|---|---|---|---|
|PeriodischeSpitzensperrspannung<br>Repetitivepeakreversevoltage|Tvj= -40°C<br>Tvj= 150°C|VRRM|3300<br>3300|||V|
|Dauergleichstrom<br>ContinuousDCforwardcurrent||IF|450|||A|
|PeriodischerSpitzenstrom<br>Repetitivepeakforwardcurrent|tP= 1 ms|IFRM|900|||A|
|Grenzlastintegral<br>I²t-value|VR= 0 V, tP= 10 ms, Tvj= 125°C<br>VR= 0 V, tP= 10 ms, Tvj= 150°C|I²t|82,9<br>68,0|||kA²s<br>kA²s|
|Spitzenverlustleistung<br>Maximumpowerdissipation|Tvj= 150°C|PRQM|1000|||kW|
|Mindesteinschaltdauer<br>Minimumturn-ontime||ton min|10,0|||µs|
|**CharakteristischeWerte/CharacteristicValues**|||min.|typ.|max.||
|Durchlassspannung<br>Forwardvoltage|IF= 450 A, VGE= 0 V<br>IF= 450 A, VGE= 0 V<br>IF= 450 A, VGE= 0 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|VF||3,10<br>2,75<br>2,65|3,50<br>2,95|V<br>V<br>V|
|Rückstromspitze<br>Peakreverserecoverycurrent|IF= 450 A, - diF/dt = 3650 A/µs (Tvj=150°C)<br>VR= 1800 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|IRM||680<br>680<br>680||A<br>A<br>A|
|Sperrverzögerungsladung<br>Recoveredcharge|IF= 450 A, - diF/dt = 3650 A/µs (Tvj=150°C)<br>VR= 1800 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Qr||230<br>445<br>525||µC<br>µC<br>µC|
|AbschaltenergieproPuls<br>Reverserecoveryenergy|IF= 450 A, - diF/dt = 3650 A/µs (Tvj=150°C)<br>VR= 1800 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Erec||220<br>490<br>595||mJ<br>mJ<br>mJ|
|Wärmewiderstand,ChipbisGehäuse<br>Thermalresistance,junctiontocase|proDiode/perdiode|RthJC|||45,5|K/kW|
|Wärmewiderstand,GehäusebisKühlkörper<br>Thermalresistance,casetoheatsink|proDiode/perdiode<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)|RthCH||19,3||K/kW|
|TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions||Tvj op|-40||150|°C|
3
V�3.1 2018-12-13
Datasheet
FF450R33T3E3
**==> picture [86 x 38] intentionally omitted <==**
## **Modul�/�Module**
|**Modul/Module**|||||||
|---|---|---|---|---|---|---|
|Isolations-Prüfspannung<br>Isolationtestvoltage|RMS, f = 50 Hz, t = 10 s|VISOL|6,0<br>|||kV|
|Teilentladungs-Aussetzspannung<br>Partialdischargeextinctionvoltage|RMS, f = 50 Hz, QPD ≤10 pC|VISOL|2,6<br>|||kV|
|MaterialModulgrundplatte<br>Materialofmodulebaseplate|||AlSiC||||
|Kriechstrecke<br>Creepagedistance|Kontakt-Kühlkörper/terminaltoheatsink<br>Kontakt-Kontakt/terminaltoterminal||53,0<br>|||mm|
|Luftstrecke<br>Clearance|Kontakt-Kühlkörper/terminaltoheatsink<br>Kontakt-Kontakt/terminaltoterminal||26,0<br>|||mm|
|VergleichszahlderKriechwegbildung<br>Comperativetrackingindex||CTI||> 600|||
||||min.|typ.|max.||
|Modulstreuinduktivität<br>Strayinductancemodule||LsCE||25||nH|
|Modulleitungswiderstand,Anschlüsse-<br>Chip<br>Moduleleadresistance,terminals-chip|TC=25°C,proSchalter/perswitch|RCC'+EE'<br>RAA'+CC'||0,41<br>0,31||mΩ|
|Lagertemperatur<br>Storagetemperature||Tstg|-40||150|°C|
|Anzugsdrehmomentf.Modulmontage<br>Mountingtorqueformodulmounting|SchraubeM6-Montagegem.gültigerApplikationsschrift<br>ScrewM6-Mountingaccordingtovalidapplicationnote|M|4,25||5,75|Nm|
|Anzugsdrehmomentf.elektr.Anschlüsse<br>Terminalconnectiontorque|SchraubeM8-Montagegem.gültigerApplikationsschrift<br>ScrewM8-Mountingaccordingtovalidapplicationnote<br>SchraubeM3-Montagegem.gültigerApplikationsschrift<br>ScrewM3-Mountingaccordingtovalidapplicationnote|M|8,0<br>0,9|-<br>-|10<br>1,1|Nm<br>Nm|
|Gewicht<br>Weight||G||700||g|
V�3.1 2018-12-13
Datasheet
4
FF450R33T3E3
**==> picture [86 x 38] intentionally omitted <==**
**Ausgangskennlinie�IGBT,Wechselrichter�(typisch) output�characteristic�IGBT,Inverter�(typical)** IC�=�f�(VCE) VGE�=�15�V
**Ausgangskennlinienfeld�IGBT,Wechselrichter�(typisch) output�characteristic�IGBT,Inverter�(typical)** IC�=�f�(VCE) Tvj�=�150°C
**==> picture [484 x 282] intentionally omitted <==**
**----- Start of picture text -----**<br>
900 900<br>Tvj = 25°C VGE = 20V<br>Tvj = 125°C VGE = 15V<br>Tvj = 150°C VGE = 12V<br>VGE = 10V<br>750 750 VGE = 9V<br>VGE = 8V<br>600 600<br>450 450<br>300 300<br>150 150<br>0 0<br>0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0<br>VCE [V] VCE [V]<br> [A] [A]<br>IC IC<br>**----- End of picture text -----**<br>
**Übertragungscharakteristik�IGBT,Wechselrichter�(typisch) transfer�characteristic�IGBT,Inverter�(typical)** IC�=�f�(VGE) VCE�=�20�V
**==> picture [236 x 282] intentionally omitted <==**
**----- Start of picture text -----**<br>
900<br>Tvj = 25°C<br>Tvj = 125°C<br>Tvj = 150°C<br>750<br>600<br>450<br>300<br>150<br>0<br>5 6 7 8 9 10 11 12 13<br>VGE [V]<br> [A]<br>IC<br>**----- End of picture text -----**<br>
## **Schaltverluste�IGBT,Wechselrichter�(typisch) switching�losses�IGBT,Inverter�(typical)** Eon�=�f�(IC),�Eoff�=�f�(IC)
VGE�=�±15�V,�RGon�=�0.7� Ω ,�RGoff�=�3.3� Ω ,�VCE�=�1800�V
**==> picture [238 x 282] intentionally omitted <==**
**----- Start of picture text -----**<br>
2500<br>Eon, Tvj = 25°C<br>Eoff, Tvj = 25°C<br>2250 E on , T vj = 125°C<br>Eoff, Tvj = 125°C<br>2000 EEon off , T, Tvj vj = 150°C = 150°C<br>1750<br>1500<br>1250<br>1000<br>750<br>500<br>250<br>0<br>0 150 300 450 600 750 900<br>IC [A]<br>E [mJ]<br>**----- End of picture text -----**<br>
V�3.1 2018-12-13
Datasheet
5
FF450R33T3E3
**==> picture [487 x 656] intentionally omitted <==**
**----- Start of picture text -----**<br>
Eon =f(R),E G off =f(R G) tdon =f(l),t=f(l),t C r C doff =f(l),t=f(l C f C)<br>VGE =+15V,1 C =450A,V CE =1800V VGE =415V,R Gon =07 Ω ,R Goff =33 Ω ,V CE =1800V,T vj =125°C<br>2000 10<br>ee<br>Eon, Tvj = 25°C tdon<br>Eoff, Tvj = 25°C t r<br>1800 E on , T vj = 125°C t doff<br>Eoff, Tvj = 125°C t f<br>1600 EEon off , T, Tvj vj = 150°C = 150°C<br>. 7<br>1400<br>1<br>1200 a<br>/ SS Se ee<br>rr<br>1000<br>800<br>7 ah Le<br>/ 0,1 Fo ee<br>600<br>x<br>2 —————<br>-_ ee<br>400 ee<br>200<br>0 0,01<br>0 1 2 3 4 5 6 7 8 9 10 0 150 300 450 600 750 900<br>RG [ Ω ] IC [A]<br>Schaltzeiten IGBT,Wechselrichter (typisch) Transienter Warmewiderstand IGBT,Wechselrichter<br>switching times IGBT,Inverter (typical) transient thermal impedance IGBT, Inverter<br>tdon =f{(R),t=f(R),t G r G doff =f(R),t=f(R G f G) ZthJC =f (t)<br>VGE =+15V,1 C =450A,V CE =1800V,T vj =125°C<br>10 a a tdon ee 100 TTT ZthJC : IGBT<br>tr<br>tdoff<br>tf<br>EARS Ee<br>aeee<br>POORERTT Io<br>1 10<br>| | Pes | PTI ETT ETAT TIN TTT<br>CooeeECCC = C i: c 1 2 3 4<br>ri[K/kW]: 3,87 16,4 5,79 2,34<br>τ i[s]: 0,00307 0,0411 0,415 5,51<br>0,1 Ww 1 | CU TI<br>0 1 2 3 4 5 6 7 8 9 10 0,001 0,01 0,1 1 10 100<br>RG [ Ω ] t [s]<br>E [mJ] t [µs]<br>t [µs] [K/kW]<br>thJC<br>Z<br>**----- End of picture text -----**<br>
6
Datasheet
2018-12-13
FF450R33T3E3
**==> picture [86 x 38] intentionally omitted <==**
## **Sicherer�Rückwärts-Arbeitsbereich�IGBT,Wechselrichter (RBSOA) reverse�bias�safe�operating�area�IGBT,Inverter�(RBSOA)** IC�=�f�(VCE)
**Kapazitäts�Charakteristik�IGBT,Wechselrichter�(typisch) capacity�characteristic�IGBT,Inverter�(typical)** C�=�f(VCE)
VGE�=�0�V,�Tvj�=�25°C,�f�=�100kHz
**==> picture [487 x 291] intentionally omitted <==**
**----- Start of picture text -----**<br>
VGE�=�±15�V,�RGoff�=�3.3� Ω ,�Tvj�=�150°C<br>1050 140<br>IC, Modul Cies<br>IC, Chip 130 C res<br>Coes<br>900 120<br>110<br>750 100<br>90<br>600 80<br>70<br>450 60<br>50<br>300 40<br>30<br>150 20<br>10<br>0 0<br>0 500 1000 1500 2000 2500 3000 3500 0,1 1 10 100<br>VCE [V] VCE [V]<br> [A]<br>IC C [nF]<br>**----- End of picture text -----**<br>
**Gateladungs�Charakteristik�IGBT,Wechselrichter�(typisch) gate�charge�characteristic�IGBT,Inverter�(typical)** VGE�=�f(QG) IC�=�450�A,�Tvj�=�25°C
**Durchlasskennlinie�der�Diode,�Wechselrichter�(typisch) forward�characteristic�of�Diode,�Inverter�(typical)** IF�=�f�(VF)
**==> picture [484 x 282] intentionally omitted <==**
**----- Start of picture text -----**<br>
15 900<br>VCC = 1800V Tvj = 25°C<br>Tvj = 125°C<br>12 Tvj = 150°C<br>750<br>9<br>6<br>600<br>3<br>0 450<br>-3<br>300<br>-6<br>-9<br>150<br>-12<br>-15 0<br>0 2 4 6 8 10 12 14 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0<br>QG [µC] VF [V]<br> [V]<br> [A]<br>VGE IF<br>**----- End of picture text -----**<br>
V�3.1 2018-12-13
Datasheet
7
FF450R33T3E3
**==> picture [496 x 309] intentionally omitted <==**
**----- Start of picture text -----**<br>
Erec =f(I F) Erec =f(R G)<br>RGon =0.7 Ω ,V CE =1800V IF =450A,V CE =1800V<br>800 700<br>Erec, Tvj = 25°C Erec, Tvj = 25°C<br>Erec, Tvj = 125°C Erec, Tvj = 125°C<br>700 Erec, Tvj = 150°C Erec, Tvj = 150°C<br>600<br>600<br>500<br>7”a7 aa reSA~~<br>7 —_<——" re<br>a oT ae<br>500 aa ~ ~ TFs Sse,<br>400<br>—_a ~_—TSS ~<br>/ “<br>400 7<br>foo<br>/ 7<br>// 300<br>/f¢<br>300 / y<br>Jv<br>‘7<br>/ 200 ~~<br>200<br>100<br>100<br>0 0<br>0 150 300 450 600 750 900 0 1 2 3 4 5 6 7<br>IF [A] RG [ Ω ]<br>E [mJ] E [mJ]<br>**----- End of picture text -----**<br>
**==> picture [279 x 18] intentionally omitted <==**
**----- Start of picture text -----**<br>
ZthJC = f(t) IR = f(V R)<br>Tvj =<br>**----- End of picture text -----**<br>
**==> picture [487 x 282] intentionally omitted <==**
**----- Start of picture text -----**<br>
100 1050<br>ZthJC : Diode IR, Modul<br>900<br>PUI PETIT(to1<br>750<br>600<br>10<br>450<br>300<br>i: 1 2 3 4 150<br>ri[K/kW]: 8,48 23,3 9,79 3,9<br>τ i[s]: 0,00268 0,0368 0,333 4,15<br>1 0<br>0,001 0,01 0,1 1 10 100 0 500 1000 1500 2000 2500 3000 3500<br>t [s] VR [V]<br> [K/kW]thJC [A]IR<br>Z<br>**----- End of picture text -----**<br>
8
Datasheet
2018-12-13
FF450R33T3E3
**==> picture [491 x 395] intentionally omitted <==**
**----- Start of picture text -----**<br>
(99,8)<br>dug . oallo<br>(4x)( 8,5)<br>C 74<br>63,5<br>(6x) 7mm<br>screwing<br>depth<br>29,5<br>20<br>eC ONES: i<br>A<br>0<br>20 0,8 A B C<br>(6x)<br>29,5<br>59<br>63,5<br>70<br>(4x) 16mm screwing depth [1on (4x)M8 a (4x) (18) 6,6 0,2 ee<br>1 A B C<br>[7] + e *<br>.. [@|[[j] [j] [7] ie<br>(4x)<br>86<br>B<br>| | [| +H HoH<br>6)(6x) M3<br>43 33,5 22 0 22 33,5 43<br>127 (144) (140)<br>3,1<br>(18)<br>(21)<br>(3x)<br>0 0,3 0,4 0,4<br>4 36 40<br>**----- End of picture text -----**<br>
9
Datasheet
2018-12-13
## **Trademarks**
## **WARNHINWEIS**
## **WARNINGS**
Updated at April 28, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
About Novapart
Novapart is a B2B electronic component broker specialising in stock shortages and cost reduction. We source hard-to-find parts and identify compliant alternatives across a catalogue of 410,000+ components from 500+ manufacturers.
Learn more →Stock Shortage Specialist
When a component is unavailable, discontinued or has an unacceptable lead time, we tap into our network of vetted European and Asian distributors to source what you need — without compromising on quality or traceability.
Request a quote →Compliant Alternatives
We identify pin-to-pin, electrically equivalent substitutes that meet the same certifications (RoHS, AEC-Q100, REACH) as your original specification — validated against datasheets, not just part numbers. Often at a lower cost.
BOM Analysis service →