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FF450R12ME4PB11BOSA1
IGBT Module, Dual, 450 A, 1.75 V, 150 °C, Module
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: INFINEON
- Product type: IGBT Modules
- Product Range: EconoDUAL 3
- IGBT Technology: IGBT 4 [Trench/Field Stop]
- IGBT Termination: Stud
- IGBT Configuration: Dual
- Transistor Mounting: Panel
- Transistor Polarity: N Channel
- DC Collector Current: 450A
- Transistor Case Style: Module
- Operating Temperature Max: 150°C
- Junction Temperature Tj Max: 150°C
- Continuous Collector Current: 450A
- Collector Emitter Voltage Max: 1.2kV
- Collector Emitter Voltage V(br)ceo: 1.2kV
- Collector Emitter Saturation Voltage: 1.75V
- Collector Emitter Saturation Voltage Vce(on): 1.75V
| Delivery and price | |
|---|---|
| Units per pack | 1 |
| Price | 23.26 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
## FF450R12ME4P_B11 **==> picture [117 x 23] intentionally omitted <==** **----- Start of picture text -----**<br> VCES = 1200V<br>IC nom = 450A / ICRM = 900A<br>**----- End of picture text -----**<br> - Motorantriebe - Servoumrichter - USV-Systeme - Windgeneratoren - CEsat - T - - Standardgehäuse - Thermisches Interface Material bereits aufgetragen - - - - - CEsat - T - - - **Digit** Datasheet www.infineon.com 2017-04-03 FF450R12ME4P_B11 **==> picture [86 x 38] intentionally omitted <==** |**IGBT,Wechselrichter/IGBT,Inverter**<br>**HöchstzulässigeWerte/MaximumRatedValues**|**IGBT,Wechselrichter/IGBT,Inverter**<br>**HöchstzulässigeWerte/MaximumRatedValues**|||||| |---|---|---|---|---|---|---| |Kollektor-Emitter-Sperrspannung<br>Collector-emittervoltage|Tvj= 25°C|VCES|1200|||V| |Kollektor-Dauergleichstrom<br>ContinuousDCcollectorcurrent|TH= 55°C, Tvj max= 175°C|IC nom|450|||A| |PeriodischerKollektor-Spitzenstrom<br>Repetitivepeakcollectorcurrent|tP= 1 ms|ICRM|900|||A| |Gate-Emitter-Spitzenspannung<br>Gate-emitterpeakvoltage||VGES|+/-20|||V| |**CharakteristischeWerte/CharacteristicValues**|||min.|typ.|max.|| |Kollektor-Emitter-Sättigungsspannung<br>Collector-emittersaturationvoltage|IC= 450 A, VGE= 15 V<br>IC= 450 A, VGE= 15 V<br>IC= 450 A, VGE= 15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|VCE sat||1,75<br>2,00<br>2,05|2,10|V<br>V<br>V| |Gate-Schwellenspannung<br>Gatethresholdvoltage|IC= 17,0 mA, VCE= VGE, Tvj= 25°C|VGEth|5,20|5,80|6,40|V| |Gateladung<br>Gatecharge|VGE= -15 V ... +15 V|QG||3,30||µC| |InternerGatewiderstand<br>Internalgateresistor|Tvj= 25°C|RGint||1,7||Ω| |Eingangskapazität<br>Inputcapacitance|f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V|Cies||28,0||nF| |Rückwirkungskapazität<br>Reversetransfercapacitance|f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V|Cres||1,55||nF| |Kollektor-Emitter-Reststrom<br>Collector-emittercut-offcurrent|VCE= 1200 V, VGE= 0 V, Tvj= 25°C|ICES|||3,0|mA| |Gate-Emitter-Reststrom<br>Gate-emitterleakagecurrent|VCE= 0 V, VGE= 20 V, Tvj= 25°C|IGES|||400|nA| |Einschaltverzögerungszeit,induktiveLast<br>Turn-ondelaytime,inductiveload|IC= 450 A, VCE= 600 V<br>VGE= ±15 V<br>RGon= 1,3Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|td on||0,19<br>0,22<br>0,22||µs<br>µs<br>µs| |Anstiegszeit,induktiveLast<br>Risetime,inductiveload|IC= 450 A, VCE= 600 V<br>VGE= ±15 V<br>RGon= 1,3Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|tr||0,06<br>0,07<br>0,07||µs<br>µs<br>µs| |Abschaltverzögerungszeit,induktiveLast<br>Turn-offdelaytime,inductiveload|IC= 450 A, VCE= 600 V<br>VGE= ±15 V<br>RGoff= 1,3Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|td off||0,49<br>0,58<br>0,62||µs<br>µs<br>µs| |Fallzeit,induktiveLast<br>Falltime,inductiveload|IC= 450 A, VCE= 600 V<br>VGE= ±15 V<br>RGoff= 1,3Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|tf||0,08<br>0,11<br>0,12||µs<br>µs<br>µs| |EinschaltverlustenergieproPuls<br>Turn-onenergylossperpulse|IC= 450 A, VCE= 600 V, LS= 35 nH<br>VGE= ±15 V, di/dt = 7000 A/µs (Tvj= 150°C)<br>RGon= 1,3Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Eon||15,0<br>26,0<br>28,5||mJ<br>mJ<br>mJ| |AbschaltverlustenergieproPuls<br>Turn-offenergylossperpulse|IC= 450 A, VCE= 600 V, LS= 35 nH<br>VGE= ±15 V, du/dt = 3100 V/µs (Tvj= 150°C)<br>RGoff= 1,3Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Eoff||38,0<br>55,5<br>61,5||mJ<br>mJ<br>mJ| |Kurzschlußverhalten<br>SCdata|VGE ≤15 V, VCC= 800 V<br>VCEmax= VCES-LsCE·di/dt<br>Tvj= 150°C<br>tP ≤10 µs,|ISC||1800||A| |Wärmewiderstand,ChipbisKühlkörper<br>Thermalresistance,junctiontoheatsink|proIGBT/perIGBT<br>validwithIFXpre-appliedthermalinterfacematerial|RthJH|||0,104|K/W| |TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions||Tvj op|-40||150|°C| 2 V�3.0 2017-04-03 Datasheet FF450R12ME4P_B11 **==> picture [86 x 38] intentionally omitted <==** ## **Diode,�Wechselrichter�/�Diode,�Inverter** ## **Höchstzulässige�Werte�/�Maximum�Rated�Values** |PeriodischeSpitzensperrspannung<br>Repetitivepeakreversevoltage|Tvj= 25°C|VRRM|1200|1200|1200|V| |---|---|---|---|---|---|---| |Dauergleichstrom<br>ContinuousDCforwardcurrent||IF|450|||A| |PeriodischerSpitzenstrom<br>Repetitivepeakforwardcurrent|tP= 1 ms|IFRM|900|||A| |Grenzlastintegral<br>I²t-value|VR= 0 V, tP= 10 ms, Tvj= 125°C<br>VR= 0 V, tP= 10 ms, Tvj= 150°C|I²t|35000<br>28500<br>|||A²s<br>A²s| |**CharakteristischeWerte/CharacteristicValues**|||min.|typ.|max.|| |Durchlassspannung<br>Forwardvoltage|IF= 450 A, VGE= 0 V<br>IF= 450 A, VGE= 0 V<br>IF= 450 A, VGE= 0 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|VF||1,65<br>1,65<br>1,65|2,10|V<br>V<br>V| |Rückstromspitze<br>Peakreverserecoverycurrent|IF= 450 A, - diF/dt = 7000 A/µs (Tvj=150°C)<br>VR= 600 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|IRM||450<br>550<br>575||A<br>A<br>A| |Sperrverzögerungsladung<br>Recoveredcharge|IF= 450 A, - diF/dt = 7000 A/µs (Tvj=150°C)<br>VR= 600 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Qr||48,0<br>92,0<br>105||µC<br>µC<br>µC| |AbschaltenergieproPuls<br>Reverserecoveryenergy|IF= 450 A, - diF/dt = 7000 A/µs (Tvj=150°C)<br>VR= 600 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Erec||26,5<br>48,5<br>55,0||mJ<br>mJ<br>mJ| |Wärmewiderstand,ChipbisKühlkörper<br>Thermalresistance,junctiontoheatsink|proDiode/perdiode<br>validwithIFXpre-appliedthermalinterfacematerial|RthJH|||0,149|K/W| |TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions||Tvj op|-40||150|°C| ## **NTC-Widerstand�/�NTC-Thermistor** ## **Charakteristische�Werte�/�Characteristic�Values** |**NTC-Widerstand/NTC-Thermistor**<br>|**NTC-Widerstand/NTC-Thermistor**<br>|||||| |---|---|---|---|---|---|---| |**CharakteristischeWerte/CharacteristicValues**|||min.|typ.|max.|| |Nennwiderstand<br>Ratedresistance|TNTC= 25°C|R25||5,00||kΩ| |AbweichungvonR100<br>DeviationofR100|TNTC= 100°C, R100= 493Ω|∆R/R|-5||5|%| |Verlustleistung<br>Powerdissipation|TNTC= 25°C|P25|||20,0|mW| |B-Wert<br>B-value|R2= R25exp [B25/50(1/T2- 1/(298,15 K))]|B25/50||3375||K| |B-Wert<br>B-value|R2= R25exp [B25/80(1/T2- 1/(298,15 K))]|B25/80||3411||K| |B-Wert<br>B-value|R2= R25exp [B25/100(1/T2- 1/(298,15 K))]|B25/100||3433||K| Angaben�gemäß�gültiger�Application�Note. Specification�according�to�the�valid�application�note. 3 V�3.0 2017-04-03 Datasheet FF450R12ME4P_B11 **==> picture [86 x 38] intentionally omitted <==** ## **Modul�/�Module** |**Modul/Module**||||||| |---|---|---|---|---|---|---| |Isolations-Prüfspannung<br>Isolationtestvoltage|RMS, f = 50 Hz, t = 1 min|VISOL|2,5<br>|||kV| |MaterialModulgrundplatte<br>Materialofmodulebaseplate|||Cu|||| |InnereIsolation<br>Internalisolation|Basisisolierung(Schutzklasse1,EN61140)<br>basicinsulation(class1,IEC61140)||Al2O3|||| |Kriechstrecke<br>Creepagedistance|Kontakt-Kühlkörper/terminaltoheatsink<br>Kontakt-Kontakt/terminaltoterminal||14,5<br>13,0<br>|||mm| |Luftstrecke<br>Clearance|Kontakt-Kühlkörper/terminaltoheatsink<br>Kontakt-Kontakt/terminaltoterminal||12,5<br>10,0<br>|||mm| |VergleichszahlderKriechwegbildung<br>Comperativetrackingindex||CTI||> 200||| ||||min.|typ.|max.|| |Modulstreuinduktivität<br>Strayinductancemodule||LsCE||20||nH| |Modulleitungswiderstand,Anschlüsse-<br>Chip<br>Moduleleadresistance,terminals-chip|TH=25°C,proSchalter/perswitch|RCC'+EE'||1,10||mΩ| |Lagertemperatur<br>Storagetemperature||Tstg|-40||125|°C| |Höchstzulässige<br>Bodenplattenbetriebstemperatur<br>Maximumbaseplateoperationtemperature||TBPmax|||125|°C| |Anzugsdrehmomentf.Modulmontage<br>Mountingtorqueformodulmounting|SchraubeM5-Montagegem.gültigerApplikationsschrift<br>ScrewM5-Mountingaccordingtovalidapplicationnote|M|3,00||6,00|Nm| |Anzugsdrehmomentf.elektr.Anschlüsse<br>Terminalconnectiontorque|SchraubeM6-Montagegem.gültigerApplikationsschrift<br>ScrewM6-Mountingaccordingtovalidapplicationnote|M|3,0|-|6,0|Nm| |Gewicht<br>Weight||G||345||g| Lagerung und Transport von Modulen mit TIM => siehe AN2012-07 Storage and shipment of modules with TIM => see AN2012-07 V�3.0 2017-04-03 Datasheet 4 FF450R12ME4P_B11 **==> picture [86 x 38] intentionally omitted <==** **Ausgangskennlinie�IGBT,Wechselrichter�(typisch) output�characteristic�IGBT,Inverter�(typical)** IC�=�f�(VCE) VGE�=�15�V **Ausgangskennlinienfeld�IGBT,Wechselrichter�(typisch) output�characteristic�IGBT,Inverter�(typical)** IC�=�f�(VCE) Tvj�=�150°C **==> picture [484 x 282] intentionally omitted <==** **----- Start of picture text -----**<br> 900 900<br>Tvj = 25°C VGE = 19V<br>Tvj = 125°C VGE = 17V<br>Tvj = 150°C VGE = 15V<br>VGE = 13V<br>750 750 VGE = 11V<br>VGE = 9V<br>600 600<br>450 450<br>300 300<br>150 150<br>0 0<br>0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0<br>VCE [V] VCE [V]<br> [A] [A]<br>IC IC<br>**----- End of picture text -----**<br> **Übertragungscharakteristik�IGBT,Wechselrichter�(typisch) transfer�characteristic�IGBT,Inverter�(typical)** IC�=�f�(VGE) VCE�=�20�V ## **Schaltverluste�IGBT,Wechselrichter�(typisch) switching�losses�IGBT,Inverter�(typical)** Eon�=�f�(IC),�Eoff�=�f�(IC) VGE�=�±15�V,�RGon�=�1.3� Ω ,�RGoff�=�1.3� Ω ,�VCE�=�600�V **==> picture [485 x 282] intentionally omitted <==** **----- Start of picture text -----**<br> 900 140<br>Tvj = 25°C Eon, Tvj = 125°C<br>Tvj = 125°C Eon, Tvj = 150°C<br>Tvj = 150°C 120 EEoff off , T, Tvj vj = 125°C = 150°C<br>750<br>100<br>600<br>80<br>450<br>60<br>300<br>40<br>150<br>20<br>0 0<br>5 6 7 8 9 10 11 12 13 0 150 300 450 600 750 900<br>VGE [V] IC [A]<br> [A]<br>IC E [mJ]<br>**----- End of picture text -----**<br> V�3.0 2017-04-03 Datasheet 5 FF450R12ME4P_B11 **==> picture [486 x 656] intentionally omitted <==** **----- Start of picture text -----**<br> Eon =f(R),E G off =f(R G) ZthJH = f(t)<br>VGE =+15V,1 C =450A,V CE =600V<br>220 + 1<br>Eon, Tvj = 125°C ZthJH : IGBT<br>200 EEonoff,, T Tvvjj = 150°C = 125°C p mH<br>Eoff, Tvj = 150°C<br>180<br>160<br>0,1<br>140 aasrryfoJ “A nooSeceI<br>pr HE<br>120<br>100<br>80<br>0,01<br>60<br>cae eeeerie<br>40<br>i: 1 2 3 4<br>ri[K/W]: 0,0066 0,0302 0,0498 0,0174<br>20 τ i[s]: 0,000547 0,0282 0,128 1,417<br>PUPETIT<br>0 0,001 TT<br>0 2 4 6 8 10 12 14 16 0,001 0,01 0,1 1 10<br>RG [ Ω ] t [s]<br>Sicherer Ruckwarts-Arbeitsbereich IGBT,Wechselrichter Durchlasskennlinie der Diode, Wechselrichter (typisch)<br>(RBSOA) forward characteristic of Diode, Inverter (typical)<br>reverse bias safe operating area IGBT,Inverter (RBSOA) IF =f(V F)<br>IC CE)<br>VGE ee sy, R Goff =1.3 Ω ,T vj =150°C<br>1000 900<br>IC, Modul Tvj = 25°C<br>IC, Chip Tvj = 125°C<br>900 Tvj = 150°C<br>750<br>800<br>700<br>600<br>600<br>500 450<br>400<br>300<br>300<br>200<br>150<br>100<br>4<br>0 0<br>0 200 400 600 800 1000 1200 1400 0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6 1,8 2,0 2,2 2,4<br>VCE [V] VF [V]<br> [K/W]<br>E [mJ]<br>thJH<br>Z<br> [A] [A]<br>IC IF<br>**----- End of picture text -----**<br> 6 Datasheet 2017-04-03 FF450R12ME4P_B11 **==> picture [485 x 309] intentionally omitted <==** **----- Start of picture text -----**<br> Erec =f il F) Erec =f(R G)<br>RGon =1.3 Ω ,V CE =600V IF =450A,V CE =600V<br>80 70<br>Erec, Tvj = 125°C Erec, Tvj = 125°C<br>Erec, Tvj = 150°C Erec, Tvj = 150°C<br>a<br>70 = | ZA |<br>a 60<br>Z<br>2<br>a“<br>Za<br>60 a<br>Za 50<br>7<br>7<br>50 |7<br>// 40 an \N<br>40 7 ~<br>/ .<br>30<br>/ INS<br>30 // ~ ~~<br>/ 20 > C<br>20 lf<br>/<br>10<br>10<br>0 0<br>0 150 300 450 600 750 900 0 2 4 6 8 10 12 14 16<br>IF [A] RG [ Ω ]<br>E [mJ] E [mJ]<br>**----- End of picture text -----**<br> **==> picture [487 x 310] intentionally omitted <==** **----- Start of picture text -----**<br> ZthJH =f (t) R=f(T)<br>1 a ee eee 100000 a a a a a<br>HES ZthJH : Diode Hp Rtyp<br>ee ee a ee<br>0,1 10000<br>0,01 1000<br>i: 1 2 3 4<br>ri[K/W]: 0,0095 0,0519 0,0674 0,0202<br>τ i[s]: 0,000544 0,0248 0,123 1,267<br>0,001 100<br>0,001 0,01 0,1 1 10 0 20 40 60 80 100 120 140 160<br>t [s] TNTC [°C]<br>] Ω<br> [K/W]<br>R[<br>thJH<br>Z<br>**----- End of picture text -----**<br> Datasheet 7 2017-04-03 FF450R12ME4P_B11 **==> picture [86 x 38] intentionally omitted <==** ## **Schaltplan�/�Circuit�diagram** **==> picture [155 x 153] intentionally omitted <==** ## **Gehäuseabmessungen�/�Package�outlines** **==> picture [16 x 4] intentionally omitted <==** **----- Start of picture text -----**<br> Infineon<br>**----- End of picture text -----**<br> **==> picture [33 x 70] intentionally omitted <==** **==> picture [33 x 70] intentionally omitted <==** 8 V�3.0 2017-04-03 Datasheet ## **WARNHINWEIS** ## **WARNINGS**
Updated at February 9, 2023
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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