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FF450R12KE4EHOSA1
IGBT Module, Dual, Common Emitter, 520 A, 1.75 V, 2.4 kW, 150 °C, Module
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: INFINEON
- Product type: IGBT Modules
- Transistor Polarity:N Channel; DC Collector Current:520A; Collector Emitter Saturation Voltage Vce(on):1.75V; Power Dissipation Pd:2.4kW; Collector Emitter Voltage V(br)ceo:1.2kV; Transis
- SVHC: No SVHC (25-Jun-2025)
- Product Range: Standard 62mm C
- IGBT Technology: IGBT 4 [Trench/Field Stop]
- IGBT Termination: Tab
- Power Dissipation: 2.4kW
- IGBT Configuration: Dual, Common Emitter
- Transistor Mounting: Panel
- Transistor Polarity: N Channel
- DC Collector Current: 520A
- Power Dissipation Pd: 2.4kW
- Transistor Case Style: Module
- Operating Temperature Max: 150°C
- Junction Temperature Tj Max: 150°C
- Continuous Collector Current: 520A
- Collector Emitter Voltage Max: 1.2kV
- Collector Emitter Voltage V(br)ceo: 1.2kV
- Collector Emitter Saturation Voltage: 1.75V
- Collector Emitter Saturation Voltage Vce(on): 1.75V
| Delivery and price | |
|---|---|
| Units per pack | 10 |
| Price | 115.28 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
IGBT-Module IGBT-modules FF450R12KE4_E VCES = 1200V IC nom = 450A / ICRM = 900A - - Hochleistungsumrichter - - - • - USV-Systeme - - • - T - T - • - - - - - - - • - Kupferbodenplatte - - • - Standardgehäuse - **Digit** 1 IGBT-Module IGBT-modules FF450R12KE4_E ## Technische�Information�/�Technical�Information **==> picture [86 x 38] intentionally omitted <==** ## **Vorläufige�Daten Preliminary�Data** ## **IGBT,Wechselrichter�/�IGBT,Inverter Höchstzulässige�Werte�/�Maximum�Rated�Values** |TechnischeInformation/TechnicalInformation<br>FF450R12KE4_E<br>IGBT-Module<br>IGBT-modules|| |---|---| |preparedby:MK<br>approvedby:JDB<br>dateofpublication:2014-03-07<br>revision:2.0<br>**VorläufigeDaten**<br>**PreliminaryData**<br>**IGBT,Wechselrichter/IGBT,Inverter**<br>**HöchstzulässigeWerte/MaximumRatedValues**<br>Kollektor-Emitter-Sperrspannung<br>Collector-emittervoltage<br>Tvj= 25°C<br>VCES<br>1200<br>V<br>Kollektor-Dauergleichstrom<br>ContinuousDCcollectorcurrent<br>TC= 100°C, Tvj max= 175°C<br>TC= 25°C, Tvj max= 175°C<br>IC nom<br>IC<br>450<br>520<br>A<br>A<br>PeriodischerKollektor-Spitzenstrom<br>Repetitivepeakcollectorcurrent<br>tP= 1 ms<br>ICRM<br>900<br>A<br>Gesamt-Verlustleistung<br>Totalpowerdissipation<br>TC= 25°C, Tvj max= 175°C<br>Ptot<br>2400<br>W<br>Gate-Emitter-Spitzenspannung<br>Gate-emitterpeakvoltage<br>VGES<br>+/-20<br>V<br>**CharakteristischeWerte/CharacteristicValues**<br>min.<br>typ.<br>max.<br>Kollektor-Emitter-Sättigungsspannung<br>Collector-emittersaturationvoltage<br>IC= 450 A, VGE= 15 V<br>IC= 450 A, VGE= 15 V<br>IC= 450 A, VGE= 15 V<br>VCE sat<br>1,75<br>2,00<br>2,05<br>2,15<br>V<br>V<br>V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Gate-Schwellenspannung<br>Gatethresholdvoltage<br>IC= 17,0 mA, VCE= VGE, Tvj= 25°C<br>VGEth<br>5,2<br>5,8<br>6,4<br>V<br>Gateladung<br>Gatecharge<br>VGE= -15 V ... +15 V<br>QG<br>3,70<br>µC<br>InternerGatewiderstand<br>Internalgateresistor<br>Tvj= 25°C<br>RGint<br>1,9<br>Ω<br>Eingangskapazität<br>Inputcapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cies<br>28,0<br>nF<br>Rückwirkungskapazität<br>Reversetransfercapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cres<br>1,10<br>nF<br>Kollektor-Emitter-Reststrom<br>Collector-emittercut-offcurrent<br>VCE= 1200 V, VGE= 0 V, Tvj= 25°C<br>ICES<br>5,0<br>mA<br>Gate-Emitter-Reststrom<br>Gate-emitterleakagecurrent<br>VCE= 0 V, VGE= 20 V, Tvj= 25°C<br>IGES<br>400<br>nA<br>Einschaltverzögerungszeit,induktiveLast<br>Turn-ondelaytime,inductiveload<br>IC= 450 A, VCE= 600 V<br>VGE= ±15 V<br>RGon= 1,0Ω<br>td on<br>0,20<br>0,25<br>0,27<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Anstiegszeit,induktiveLast<br>Risetime,inductiveload<br>IC= 450 A, VCE= 600 V<br>VGE= ±15 V<br>RGon= 1,0Ω<br>tr<br>0,045<br>0,05<br>0,055<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Abschaltverzögerungszeit,induktiveLast<br>Turn-offdelaytime,inductiveload<br>IC= 450 A, VCE= 600 V<br>VGE= ±15 V<br>RGoff= 1,0Ω<br>td off<br>0,50<br>0,60<br>0,62<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Fallzeit,induktiveLast<br>Falltime,inductiveload<br>IC= 450 A, VCE= 600 V<br>VGE= ±15 V<br>RGoff= 1,0Ω<br>tf<br>0,10<br>0,16<br>0,18<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>EinschaltverlustenergieproPuls<br>Turn-onenergylossperpulse<br>IC= 450 A, VCE= 600 V, LS= 30 nH<br>VGE= ±15 V, di/dt = 9000 A/µs (Tvj= 150°C)<br>RGon= 1,0Ω<br>Eon<br>19,0<br>30,0<br>36,0<br>mJ<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>AbschaltverlustenergieproPuls<br>Turn-offenergylossperpulse<br>IC= 450 A, VCE= 600 V, LS= 30 nH<br>VGE= ±15 V, du/dt = 4000 V/µs (Tvj= 150°C)<br>RGoff= 1,0Ω<br>Eoff<br>33,0<br>50,0<br>56,0<br>mJ<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Kurzschlußverhalten<br>SCdata<br>VGE ≤15 V, VCC= 800 V<br>VCEmax= VCES-LsCE·di/dt<br>ISC<br>1800<br>A<br>Tvj= 150°C<br>tP ≤10 µs,<br>Wärmewiderstand,ChipbisGehäuse<br>Thermalresistance,junctiontocase<br>proIGBT/perIGBT<br>RthJC<br>0,062 K/W<br>Wärmewiderstand,GehäusebisKühlkörper<br>Thermalresistance,casetoheatsink<br>proIGBT/perIGBT<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)<br>RthCH<br>0,031<br>K/W<br>TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions<br>Tvj op<br>-40<br>150<br>°C|| 2 IGBT-Module IGBT-modules FF450R12KE4_E ## Technische�Information�/�Technical�Information **==> picture [86 x 38] intentionally omitted <==** ## **Vorläufige�Daten Preliminary�Data** ## **Diode,�Wechselrichter�/�Diode,�Inverter** ## **Höchstzulässige�Werte�/�Maximum�Rated�Values** |PeriodischeSpitzensperrspannung<br>Repetitivepeakreversevoltage|Tvj= 25°C|VRRM|1200|V| |---|---|---|---|---| |Dauergleichstrom<br>ContinuousDCforwardcurrent||IF|450|A| |PeriodischerSpitzenstrom<br>Repetitivepeakforwardcurrent|tP= 1 ms|IFRM|900|A| |Grenzlastintegral<br>I²t-value|VR= 0 V, tP= 10 ms, Tvj= 125°C<br>VR= 0 V, tP= 10 ms, Tvj= 150°C|I²t|34000<br>32000<br>|A²s<br>A²s| ## **Charakteristische�Werte�/�Characteristic�Values** |||||||| |---|---|---|---|---|---|---| |**CharakteristischeWerte/CharacteristicValues**|||min.|typ.|max.|| |Durchlassspannung<br>Forwardvoltage|IF= 450 A, VGE= 0 V<br>IF= 450 A, VGE= 0 V<br>IF= 450 A, VGE= 0 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|VF||1,70<br>1,75<br>1,75|2,25|V<br>V<br>V| |Rückstromspitze<br>Peakreverserecoverycurrent|IF= 450 A, - diF/dt = 9000 A/µs (Tvj=150°C)<br>VR= 600 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|IRM||490<br>550<br>560||A<br>A<br>A| |Sperrverzögerungsladung<br>Recoveredcharge|IF= 450 A, - diF/dt = 9000 A/µs (Tvj=150°C)<br>VR= 600 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Qr||44,0<br>80,0<br>90,0||µC<br>µC<br>µC| |AbschaltenergieproPuls<br>Reverserecoveryenergy|IF= 450 A, - diF/dt = 9000 A/µs (Tvj=150°C)<br>VR= 600 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Erec||19,0<br>35,0<br>39,0||mJ<br>mJ<br>mJ| |Wärmewiderstand,ChipbisGehäuse<br>Thermalresistance,junctiontocase|proDiode/perdiode|RthJC|||0,11|K/W| |Wärmewiderstand,GehäusebisKühlkörper<br>Thermalresistance,casetoheatsink|proDiode/perdiode<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)|RthCH||0,055||K/W| |TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions||Tvj op|-40||150|°C| date�of�publication:�2014-03-07 revision:�2.0 prepared�by:�MK approved�by:�JDB 3 IGBT-Module IGBT-modules FF450R12KE4_E ## Technische�Information�/�Technical�Information **==> picture [86 x 38] intentionally omitted <==** ## **Vorläufige�Daten Preliminary�Data** ## **Modul�/�Module** |**Modul/Module**||||||| |---|---|---|---|---|---|---| |Isolations-Prüfspannung<br>Isolationtestvoltage|RMS, f = 50 Hz, t = 1 min.|VISOL|4,0|||kV| |MaterialModulgrundplatte<br>Materialofmodulebaseplate|||Cu|||| |InnereIsolation<br>Internalisolation|Basisisolierung(Schutzklasse1,EN61140)<br>basicinsulation(class1,IEC61140)||Al2O3|||| |Kriechstrecke<br>Creepagedistance|Kontakt-Kühlkörper/terminaltoheatsink<br>Kontakt-Kontakt/terminaltoterminal||29,0<br>23,0|||mm| |Luftstrecke<br>Clearance|Kontakt-Kühlkörper/terminaltoheatsink<br>Kontakt-Kontakt/terminaltoterminal||23,0<br>11,0|||mm| |VergleichszahlderKriechwegbildung<br>Comperativetrackingindex||CTI||> 400||| ||||min.|typ.|max.|| |Wärmewiderstand,GehäusebisKühlkörper<br>Thermalresistance,casetoheatsink|proModul/permodule<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)|RthCH||0,01||K/W| |Modulstreuinduktivität<br>Strayinductancemodule||LsCE||20||nH| |Modulleitungswiderstand,Anschlüsse-<br>Chip<br>Moduleleadresistance,terminals-chip|TC=25°C,proSchalter/perswitch|RCC'+EE'||0,70||mΩ| |Lagertemperatur<br>Storagetemperature||Tstg|-40||125|°C| |Anzugsdrehmomentf.Modulmontage<br>Mountingtorqueformodulmounting|SchraubeM6-Montagegem.gültigerApplikationsschrift<br>ScrewM6-Mountingaccordingtovalidapplicationnote|M|3,00|-|6,00|Nm| |Anzugsdrehmomentf.elektr.Anschlüsse<br>Terminalconnectiontorque|SchraubeM6-Montagegem.gültigerApplikationsschrift<br>ScrewM6-Mountingaccordingtovalidapplicationnote|M|2,5|-|5,0|Nm| |Gewicht<br>Weight||G||340||g| prepared�by:�MK date�of�publication:�2014-03-07 approved�by:�JDB revision:�2.0 4 ## IGBT-Module IGBT-modules Technische Information FF450R12KE4_E / Technical Information **==> picture [487 x 596] intentionally omitted <==** **----- Start of picture text -----**<br> IC =f(V CE) IC =f(V CE)<br>VGE =15V Tvj = 150°C<br>900 a | , 7 900 es|<br>Tvj = 25°C VGE = 19V<br>800 Tvj = 125°C 7 v 800 VGE = 17V ZL<br>Tvj = 150°C sy VGE = 15V i; i<br>VGE = 13V<br>700 700 VGE = 11V<br>VGE = 9V<br>600 P| | | fae 600 Po o AL<br>ae af 7<br>500 500<br>us ; 7<br>/<br>400 400<br>vA<br>J<br>300 300<br>200 200<br>100 100<br>pi LA<br>0 0<br>0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0<br>VCE [V] VCE [V]<br>Ubertragungscharakteristik IGBT,Wechselrichter (typisch) Schaltverluste IGBT,Wechselrichter (typisch)<br>transfer characteristic IGBT,Inverter (typical) switching losses IGBT, Inverter (typical)<br>IC =f(V GE) Eon =f(l),E C off =f(I C)<br>VCE =20V VGE =415V,R Gon =1 Ω ,R Goff =1 Ω ,V CE =600V<br>900 120<br>Tvj = 25°C Eon, Tvj = 125°C<br>800 Tvj = 125°C Eoff, Tvj = 125°C<br>Tvj = 150°C Eon, Tvj = 150°C<br>100 Eoff, Tvj = 150°C<br>700<br>i f\ -<br>600 80<br>500<br>60 oO \~<br>ee < a<br>400<br>7 Neo =<br>300 40<br>200<br>20<br>100 nan An om4,<br>0 0<br>5 6 7 8 9 10 11 12 0 100 200 300 400 500 600 700 800 900<br>VGE [V] IC [A]<br> [A] [A]<br>IC IC<br> [A]<br>IC E [mJ]<br>**----- End of picture text -----**<br> 5 IGBT-Module IGBT-modules ## FF450R12KE4_E **==> picture [486 x 596] intentionally omitted <==** **----- Start of picture text -----**<br> Eon =f(R),E G off =f(R G) ZthJC = f(t)<br>VGE =+15V,1 C =450A,V CE =600V<br>220 0,1<br>Eon, Tvj = 125°C ZthJC : IGBT<br>200 =o Eoff, Tvj = 125°C eee H — SO E Eee<br>Eon, Tvj = 150°C<br>180 f e Eoff, Tvj = 150°C Poppe: oea<br>160 Oe O e eea a Aa | ||<br>140 e e<br>120<br>ea Pl<br>0,01<br>100 Pf ft frZff fd | aee)<br>80 Pf ft ryt ff} dd 2PT AC<br>60 | | rf}: ff | 4 PTYAAPTT<br>40 P aap PATI | EEE ET<br>i: 1 2 3 4<br>A no PAB aA ||| ri[K/W]: 0,00372 0,02046 0,01984 0,01798<br>20 τ i[s]: 0,01 0,02 0,05 0,1<br>0 PE EP 0,001 a<br>0 1 2 3 4 5 6 7 8 9 10 0,001 0,01 0,1 1 10<br>RG [ Ω ] t [s]<br>Sicherer Ruckwarts-Arbeitsbereich IGBT,Wechselrichter Durchlasskennlinie der Diode, Wechselrichter (typisch)<br>(RBSOA) forward characteristic of Diode, Inverter (typical)<br>reverse bias safe operating area IGBT, Inverter (RBSOA) IF =f(V F)<br>IC =f(V CE)<br>VGE ve V,R Goff =1 Ω ,T vj =150°C<br>1000 900<br>IC, Modul Tvj = 25°C<br>900 IC, Chip 810 Tvj = 125°C<br>FeJT. R Tvj = 150°C T<br>ee<br>800 720<br>en e eee<br>700 630<br>Pott EEE EE ae<br>600 eee 540 yi<br>500 450<br>ae<br>400 360<br>300 270<br>200 180<br>PEt<br>100 90<br>PE A PL ee<br>PN ere<br>0 0<br>0 200 400 600 800 1000 1200 1400 0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6 1,8 2,0 2,2 2,4<br>VCE [V] VF [V]<br> [K/W]<br>E [mJ]<br>thJC<br>Z<br> [A] [A]<br>IC IF<br>**----- End of picture text -----**<br> 6 IGBT-Module IGBT-modules ## FF450R12KE4_E **==> picture [485 x 279] intentionally omitted <==** **----- Start of picture text -----**<br> Erec =f (I F) Erec =f(R G)<br>RGon =1 Ω ,V CE =600V IF =450A,V CE =600V<br>55 50<br>Erec, Tvj = 125°C Erec, Tvj = 125°C<br>50 ( Erec, Tvj = 150°C | 45 Erec, Tvj = 150°C<br>45<br>40<br>40<br>35<br>35 _——=— — PREP | |<br>30<br>H H CNR<br>30<br>25<br>25<br>20<br>20 SESEPiA tT tT | tt =O COOS S eC oorES<br>15<br>15<br>10<br>10<br>5 5<br>0 0<br>0 100 200 300 400 500 600 700 800 900 0 1 2 3 4 5 6 7 8 9 10<br>IF [A] RG [ Ω ]<br>E [mJ] E [mJ]<br>**----- End of picture text -----**<br> **==> picture [238 x 280] intentionally omitted <==** **----- Start of picture text -----**<br> ZthJC = f(t)<br>1<br>et<br>ZthJC : Diode<br>H—ooFe e eee o<br>rT TT T T TT<br>a<br>Bani a T|<br>0,1<br>Pea t<br>PT TT A<br>aeea ee el<br>A<br>a<br>VAM CATE ETI UA<br>0,01<br>AHeeHttt<br>( 7] Teiee<br>I7 | [TTT]<br>nL |||<br>i: 1 2 3 4<br>ri[K/W]: 0,0066 0,0363 0,0352 0,0319<br>τ i[s]: 0,01 0,02 0,05 0,1<br>0,001<br>0,001 0,01 0,1 1 10<br>t [s]<br> [K/W]<br>thJC<br>Z<br>**----- End of picture text -----**<br> 7 **==> picture [523 x 269] intentionally omitted <==** **----- Start of picture text -----**<br> Technische�Information�/�Technical�Information<br>IGBT-Module<br>IGBT-modules FF450R12KE4_E<br>Vorläufige�Daten<br>Preliminary�Data<br>Schaltplan�/�circuit_diagram_headline<br>Gehäuseabmessungen�/�package�outlines<br>**----- End of picture text -----**<br> **==> picture [461 x 285] intentionally omitted <==** **----- Start of picture text -----**<br> j n<br>j n<br>i<br>i<br>prepared�by:�MK date�of�publication:�2014-03-07<br>approved�by:�JDB revision:�2.0<br>**----- End of picture text -----**<br> 8 **==> picture [66 x 19] intentionally omitted <==** **----- Start of picture text -----**<br> IGBT-Module<br>IGBT-modules<br>**----- End of picture text -----**<br> ## FF450R12KE4_E **==> picture [110 x 11] intentionally omitted <==** **----- Start of picture text -----**<br> Nutzungsbedingungen<br>**----- End of picture text -----**<br> **==> picture [42 x 8] intentionally omitted <==** **----- Start of picture text -----**<br> application.<br>**----- End of picture text -----**<br> 9
Updated at April 28, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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