![FF450R08A03P2XKSA1 — IGBT Module, Dual [Half Bridge], 450 A, 1.2 V, 1.667 kW, 150 °C, Module](/media/1/2/9/7EB81551D2E10921.webp)
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FF450R08A03P2XKSA1
IGBT Module, Dual [Half Bridge], 450 A, 1.2 V, 1.667 kW, 150 °C, Module
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- Manufacturer: INFINEON
- Product type: IGBT Modules
- Available until stocks are exhausted
- SVHC: No SVHC (27-Jun-2018)
- Product Range: HybridPACK
- IGBT Technology: IGBT [Trench/Field Stop]
- IGBT Termination: -
- Power Dissipation: 1.667kW
- IGBT Configuration: Dual [Half Bridge]
- Transistor Mounting: Panel
- DC Collector Current: 450A
- Power Dissipation Pd: 1.667kW
- Transistor Case Style: Module
- Operating Temperature Max: 150°C
- Junction Temperature Tj Max: 150°C
- Continuous Collector Current: 450A
- Collector Emitter Voltage Max: 750V
- Collector Emitter Voltage V(br)ceo: 750V
- Collector Emitter Saturation Voltage: 1.2V
- Collector Emitter Saturation Voltage Vce(on): 1.2V
| Delivery and price | |
|---|---|
| Units per pack | 1 |
| Price | 131.16 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
# FF450R08A03P2 **FF450R08A03P2** Double Side Cooled Module VCES = 750 V IC = 450 A ## **Description** - - - Optimized for automotive applications with DC link voltages up to 450 V and gate driver voltage level - - - - - - T - The HybridPACK[TM] DSC S2 is a very compact half-bridge module targeting hybrid and electric vehicles. The module is based on Infineon’s long-term experience developing IGBT power modules and implements the EDT2 IGBT generation, which is an automotive Micro-Pattern Trench-Field-Stop cell design optimized for electric drive train applications. The chipset has benchmark current density combined with short circuit ruggedness and increased blocking voltage for reliable inverter operation under harsh environmental conditions. The EDT2 IGBTs also show excellent light load power losses, which helps to improve System efficiency over a real driving cycle. The EDT2 IGBT was optimized for applications with switching frequencies in the range of 10 kHz. Additionally, on-die integrated current sensor and temperature sensor allow precise monitoring of IGBT state. These features enable enhanced protection and intelligent control of the system. - - - The innovative and small package is designed for Double Sided Cooling (DSC) with superior thermal performance. The low stray inductance and increased blocking voltage support the design of systems with a very high efficiency. Furthermore, new material combinations and assembly technologies enable best thermal and electrical performance at highest reliability and mechanical robustness. FF450R08A03P2 SP001630036 Final Data Sheet 2 **FF450R08A03P2 Double�Side�Cooled�Module** **==> picture [146 x 64] intentionally omitted <==** ## **2�����IGBT,Inverter** ## **2.1����Maximum�Rated�Values** |**2.1MaximumRatedValues**||||||| |---|---|---|---|---|---|---| |**Parameter**|**Conditions**|**Symbol**||**Value**||**Unit**| |Collector-emittervoltage|Tvj= 25°C|VCES||750||V| |Implementedcollectorcurrent||ICN||450||A| |ContinuousDCcollectorcurrent|TC= 120°C, Tvj max= 175°C|IC nom||300||A| |Repetitivepeakcollectorcurrent|tP= 1 ms|ICRM||900||A| |Totalpowerdissipation|TC= 25°C, Tvj max= 175°C|Ptot||1667||W| |Gate-emitterpeakvoltage||VGES||+/-20||V| |**2.2CharacteristicValues**|||min.|typ.|max.|| |Collector-emittersaturationvoltage|IC= 300 A, VGE= 15 V<br>IC= 300 A, VGE= 15 V<br>IC= 300 A, VGE= 15 V<br>Tvj= 25°C<br>Tvj= 150°C<br>Tvj= 175°C|VCE sat||1.20<br>1.27<br>1.29|1.44|V| |Gatethresholdvoltage|IC= 4.85 mA, VCE= VGE<br>Tvj= 25°C|VGEth|4.90|5.80|6.50|V| |Gatecharge|VGE= -8 V ... 15 V, VCE= 400V|QG||2.15||µC| |Internalgateresistor|Tvj= 25°C|RGint||2.0||Ω| |Inputcapacitance|f = 1 MHz, VCE= 25 V, VGE= 0 V<br>Tvj= 25°C|Cies||38.5||nF| |Reversetransfercapacitance|f = 1 MHz, VCE= 25 V, VGE= 0 V<br>Tvj= 25°C|Cres||0.18||nF| |Collector-emittercut-offcurrent|VCE= 450 V, VGE= 0 V<br>Tvj= 25°C|ICES|||0.1|mA| |Gate-emitterleakagecurrent|VCE= 0 V, VGE= 20 V<br>Tvj= 25°C|IGES|||400|nA| |Turn-ondelaytime,inductiveload|IC= 300 A, VCE= 400 V<br>VGE= -8/+15 V<br>RGon= 3.6Ω<br>Tvj= 25°C<br>Tvj= 150°C<br>Tvj= 175°C|td on||0.34<br>0.36<br>0.36||µs| |Risetime,inductiveload|IC= 300 A, VCE= 400 V<br>VGE= -8/+15 V<br>RGon= 3.6Ω<br>Tvj= 25°C<br>Tvj= 150°C<br>Tvj= 175°C|tr||0.06<br>0.07<br>0.07||µs| |Turn-offdelaytime,inductiveload|IC= 300 A, VCE= 400 V<br>VGE= -8/+15 V<br>RGoff= 2.4Ω<br>Tvj= 25°C<br>Tvj= 150°C<br>Tvj= 175°C|td off||0.48<br>0.54<br>0.56||µs| |Falltime,inductiveload|IC= 300 A, VCE= 400 V<br>VGE= -8/+15 V<br>RGoff= 2.4Ω<br>Tvj= 25°C<br>Tvj= 150°C<br>Tvj= 175°C|tf||0.07<br>0.12<br>0.13||µs| |Turn-onenergylossperpulse|IC= 300 A, VCE= 400 V, LS= 25 nH<br>VGE= -8/+15 V, di/dt = 3400 A/µs (Tvj= 175°C)<br>RGon= 3.6Ω<br>Tvj= 25°C<br>Tvj= 150°C<br>Tvj= 175°C|Eon||11.5<br>13.5<br>14.5||mJ| |Turn-offenergylossperpulse|IC= 300 A, VCE= 400 V, LS= 25 nH<br>VGE= -8/+15 V, du/dt = 3200 V/µs (Tvj= 175°C)<br>RGoff= 2.4Ω<br>Tvj= 25°C<br>Tvj= 150°C<br>Tvj= 175°C|Eoff||12.0<br>15.5<br>17.0||mJ| |SCdata|VGE ≤15 V, VCC= 400 V<br>VCEmax= VCES-LsCE·di/dt<br>Tvj= 175°C<br>tP ≤3 µs,|ISC||2000||A| |Thermalresistance,junctiontocase|perIGBT|RthJC|||0.0901)|K/W| |Thermalresistance,casetoheatsink|perIGBT<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)<br>ClampingForceF=700N|RthCH||0.1001)||K/W| |Temperatureunderswitchingconditions|topcontinuous<br>for 10s within a period of 30s, occurrence maximum 3000<br>times over lifetime|Tvj op|-40<br>150||150<br>175|°C| 1) with double sided cooling, evaluation according to HybridPACK cool application note Final Data Sheet 3 3 V3.0,��2020-05-11 **FF450R08A03P2 Double�Side�Cooled�Module** **==> picture [146 x 64] intentionally omitted <==** ## **3�����Diode,�Inverter** ## **3.1����Maximum�Rated�Values** |**3.1MaximumRatedValues**||||||| |---|---|---|---|---|---|---| |**Parameter**|**Conditions**|**Symbol**||**Value**||**Unit**| |Repetitivepeakreversevoltage|Tvj= 25°C|VRRM||750||V| |Implementedforwardcurrent||IFN||450||A| |ContinuousDCforwardcurrent||IF||300||A| |Repetitivepeakforwardcurrent|tP= 1 ms|IFRM||900||A| |I²t-value|VR= 0 V, tP= 10 ms, Tvj= 150°C|I²t||8500||A²s| |**3.2CharacteristicValues**|||min.|typ.|max.|| |Forwardvoltage|IF= 300 A, VGE= 0 V<br>IF= 300 A, VGE= 0 V<br>IF= 300 A, VGE= 0 V<br>Tvj= 25°C<br>Tvj= 150°C<br>Tvj= 175°C|VF||1.55<br>1.45<br>1.40|1.83|V| |Peakreverserecoverycurrent|IF= 300 A, - diF/dt = 3400 A/µs (Tvj= 175°C)<br>VR= 400 V<br>VGE= -8 V<br>Tvj= 25°C<br>Tvj= 150°C<br>Tvj= 175°C|IRM||170<br>235<br>250||A| |Recoveredcharge|IF= 300 A, - diF/dt = 3400 A/µs (Tvj= 175°C)<br>VR= 400 V<br>VGE= -8 V<br>Tvj= 25°C<br>Tvj= 150°C<br>Tvj= 175°C|Qr||12.0<br>26.0<br>31.0||µC| |Reverserecoveryenergy|IF= 300 A, - diF/dt = 3400 A/µs (Tvj= 175°C)<br>VR= 400 V<br>VGE= -8 V<br>Tvj= 25°C<br>Tvj= 150°C<br>Tvj= 175°C|Erec||2.90<br>6.60<br>8.00||mJ| |Thermalresistance,junctiontocase|perdiode|RthJC|||0.1451)|K/W| |Thermalresistance,casetoheatsink|perdiode<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)<br>ClampingForceF=700N|RthCH||0.1401)||K/W| |Temperatureunderswitchingconditions|topcontinuous<br>for 10s within a period of 30s, occurrence maximum 3000<br>times over lifetime|Tvj op|-40<br>150||150<br>175|°C| ## **4�����Module** |**4Module**||||||| |---|---|---|---|---|---|---| |**Parameter**|**Conditions**|**Symbol**||**Value**||**Unit**| |Isolationtestvoltage|RMS, f = 50 Hz, t = 1 min.|VISOL|2.5<br>|||kV| |Materialofmodulebaseplate|||Cu|||| |Internalisolation|basicinsulation(class1,IEC61140)||Al2O3|||| |Creepagedistance|terminaltoheatsink<br>terminaltoterminal|dCreep|3.5<br>|||mm| |Clearance|terminaltoheatsink<br>terminaltoterminal|dClear|3.5<br>|||mm| |Comperativetrackingindex||CTI||> 600||| ||||min.|typ.<br>max.||| |Strayinductancemodule||LsCE||15||nH| |Storagetemperature||Tstg|-40||125|°C| |Terminalconnectiontorque|ScrewM5|M||-||Nm| |Mounting force per clamp||F||-|750|N| |Weight||G||31||g| ## **5�����Temperature�Sensor** |**5TemperatureSensor**||||||| |---|---|---|---|---|---|---| |**Parameter**|**Conditions**|**Symbol**|**Min**|**Typ**|**Max**|**Unit**| |Forwardvoltage|ITS= 0.22 mA, Tvj= 25°C|VTS|2.2202|) 2.280|2.3402)|V| |temperaturecoefficient(tcr)|ITS= 0.22 mA|TCTS||-5.50||mV/K| - 1) with double sided cooling, evaluation according to HybridPACK cool application note 2) Verified by design, not by test Final Data Sheet V3.0,��2020-05-11 4 **FF450R08A03P2 Double�Side�Cooled�Module** **==> picture [146 x 64] intentionally omitted <==** ## **6�����Current�Sensor** |**6CurrentSensor**||||||| |---|---|---|---|---|---|---| |**Parameter**|**Conditions**|**Symbol**|**Min**|**Typ**|**Max**|**Unit**| |Outputvoltage|VCE= 1.85 V, IC= 900 A<br>Rsense= 2.40Ω, Tvj= 25°C<br>VGE= 15 V|Vsense||0.55||V| |**7Customized**|||min.|typ.|max.|| |Current Sensor<br>Output Current|IC = 100 A, Tvj = 175°C, evaluation according to<br>HybridPACKTMDSC application note|Ics|80|100|120|mA| Final Data Sheet V3.0,��2020-05-11 5 Double Side **FF450R08A03P2** Cooled Module **==> picture [504 x 620] intentionally omitted <==** **----- Start of picture text -----**<br> IC =f(V CE) IC =f(V CE)<br>VGE ts Vv Tvj = ie<br>900 900<br>a y a I wo<br>Tvj = 25°C VGE = 19V<br>800 E TTvjvj = 150°C = 175°C Y / 800 e VVGEGE = 17V = 15V ae |i<br>VGE = 13V<br>VGE = 11V<br>700 T PEPEr)AA) 700 Ie E VGE = 9V yee<br>600 600<br>Mf<br>SERRE eee ee<br>500 500<br>oA/ Le/<br>400 400<br>300 Fe) 300 EE<br>200 200<br>EERE ARR Zee<br>100 100<br>Vs a<br>Oe | LA<br>0 0<br>0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6 1,8 2,0 2,2 2,4 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0<br>VCE [V] VCE [V]<br>transfer characteristic IGBT,Inverter (typical) switching losses IGBT, Inverter (typical)<br>IC =f(V GE) Eon =f(l),E C off =fi(l C)<br>VCE =20V VGE =-8/+15V,R Gon =36 Ω ,R Goff =24 Ω ,V CE =400V<br>900 40<br>Tvj = 25°C Eon, Tvj = 150°C<br>Tvj = 150°C Eoff, Tvj = 150°C<br>800 Tvj = 175°C 35 Eon, Tvj = 175°C<br>en E Eoff, Tvj = 175°C j<br>700<br>30<br>et t A 7 | | 14<br>600<br>pte P y<br>25<br>500<br>S000) (00 ee<br>20<br>400<br>PL ae<br> tty 15 nn aa<br>300<br>San / eee ee<br>10<br>San Ae Va<br>200<br>fan ene 5 4<br>100 A LF<br>Z LL<br>0 are 0<br>5 PT 6 7 Y 8 9 10 TTT 11 12 } 13 0 Az 100 200 300 | 400 500 600<br>VGE [V] IC [A]<br> [A] [A]<br>IC IC<br> [A]<br>IC E [mJ]<br>**----- End of picture text -----**<br> Final Data Sheet 6 Double Side **FF450R08A03P2** Cooled Module **==> picture [503 x 620] intentionally omitted <==** **----- Start of picture text -----**<br> Eon =f(R),E G off =f(R G) ZthJH = f(t)<br>VGE =-8/+15V,1 C =300A,V CE =400V<br>30 1<br>a pt<br>Eon, Tvj = 150°C ZthJH : IGBT<br>Eoff, Tvj = 150°C y q#— a a eee e<br>Eon, Tvj = 175°C Y e eee ell<br>Eoff, Tvj = 175°C<br>- Et Et<br>25 Td /KLA CraMLEaonelnea oll<br>0,1<br>Poeee<br>Pt ett ett tt<br>7 ee<br>Lo a eel<br>20 a,So eee<br>Lo nn ee— EDSZaAMMATUTIOM ROTI OUTII<br>0,01<br>—_ oom eeel<br>|<br>15 A7 S/oLe eePP]PT TT<br>4 a ee ell<br>i: 1 2 3 4<br>ri[K/W]: 0,007845 0,02284 0,08379 0,06864<br>τ i[s]: 0,0003479 0,013 0,1423 0,5561<br>i a<br>ooo<br>10 0,001<br>2 4 6 8 10 12 0,001 0,01 0,1 1 10<br>RG [ Ω ] t [s]<br>reverse bias safe operating area IGBT,Inverter (RBSOA) forward characteristic of Diode, Inverter (typical)<br>IC =f(V CE) IF =f(V F)<br>VGE ry BV.R Goff =2.4 Ω ,T vj =175°C<br>1000 900<br>Ic, Modul Tvj = 25°C<br>900 EJ IC, Chip ti 800 Ee TTvjvj = 150°C = 175°C Lite<br>800<br>PT T LEAL 700 A<br>700<br>600<br>600<br>Pit te ie ORREREEEy EE<br>500<br>PEE RH<br>500<br>400<br>400<br>| ELEVA<br>300<br>300<br>Pit tet a éyj LL<br>4<br>eee 200 eee eee<br>200<br>100 eee 100 PY<br>PTT 4<br>0 0<br>TT yy y Lp [e][er]<br>0 100 200 300 400 500 600 700 800 0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6 1,8 2,0 2,2 2,4<br>VCE [V] VF [V]<br> [K/W]<br>E [mJ]<br>thJH<br>Z<br> [A] [A]<br>IC IF<br>**----- End of picture text -----**<br> Final Data Sheet 7 **FF450R08A03P2** Double Side Cooled Module **==> picture [502 x 297] intentionally omitted <==** **----- Start of picture text -----**<br> Erec =f (I F) Erec =f(R G)<br>RGon =3.6 Ω ,V CE =400V IF =300A,V CE =400V<br>12 Lt 12 ee<br>Erec, Tvj = 150°C Erec, Tvj = 150°C<br>Erec, Tvj = 175°C Erec, Tvj = 175°C<br>Sa - Sa<br>10 10<br>7 N<br>8 7 ZO 8 ~<br>7 ~<br>( vA _— —<br>6 LZa 6 | “o><br>AL} LEE> _|Pe _<br>4 4<br>/<br>/<br>2 2<br>0 0<br>0 100 200 300 400 500 600 2 3 4 5 6 7 8 9 10<br>IF [A] RG [ Ω ]<br>E [mJ] E [mJ]<br>**----- End of picture text -----**<br> **==> picture [16 x 7] intentionally omitted <==** **----- Start of picture text -----**<br> ZthJH<br>**----- End of picture text -----**<br> **==> picture [244 x 273] intentionally omitted <==** **----- Start of picture text -----**<br> 1<br>| cn ZthJH : Diode acess ee oe at ee<br>ee eee<br>iT Tt Tt<br>PT TT T TT<br>a<br>PL TI een T T<br>Ur IL<br>0,1 PLUM ete<br>a<br>es<br>PT VA PE]<br>aell<br>|PATA|LATTEELT LEE T TET tTLLTTT<br>0,01 IAI Il<br>Pt<br>a<br>PT TT<br>Pt TT TETTT<br>i: 1 2 3 4<br>S I ri[K/W]: 0,01463 0,03657 0,1284 0,09856<br>τ i[s]: 0,0003128 0,01194 0,119 0,4694<br>0,001<br>0,001 0,01 0,1 1 10<br>t [s]<br> [K/W]<br>thJH<br>Z<br>**----- End of picture text -----**<br> Final Data Sheet 8 Double Side **FF450R08A03P2** Cooled Module > Pin Number ~~ee~~ Symbol I/O Function 1 P DC Supply (+) Positive Supply , ~~a~~ 2 N DC Supply (-) Negative Supply ~~ee ee~~ 3 U AC Output U Phase Output 4 T+L Input Temperature Sensor Plus Low Side 5 T-L Output Temperature Sensor Minus Low Side 12 ~~ee i~~ 6 EL Output IGBT Emitter Output Low Side ~~a ;~~ 7 CSL Output IGBT Current Sensor Output Low Side 3 ~~ee ee~~ 8 GL Input Gate Input Low Side ~~a~~ 9 T+H Input Temperature Sensor Plus High Side 10 T-H Output Temperature Sensor Minus High Side ~~ee~~ | ~~ee ee~~ 11 EH Output IGBT Emitter Output High Side ~~a~~ > 12 ~~ee~~ CSH Output IGBT Current Sensor output High Side 13 GH Input Gate Input High Side ~~;a~~ 14 PS Output P-Terminal Voltage Sensing / IGBT Collector Output ~~a~~ Final Data Sheet 9 **FF450R08A03P2** Double Side Cooled Module Final Data Sheet 10 **FF450R08A03P2 Double�Side�Cooled�Module** **==> picture [146 x 64] intentionally omitted <==** ## **Revision�History** Major changes since previous revision |Revision History|Revision History|| |---|---|---| |**Reference**|**Date**|**Description**| |V2.0|2018-12-06|-| |V2.1|2020-04-16|Correction of package outlines| |V3.0|2020-05-11|Final datasheet| Final Data Sheet 11 V3.0,��2020-05-11 ## **FF450R08A03P2** Double Side Cooled Module ## **Information** (http://www.infineon.com) ## **Warnings** ## **Trademarks** Last update 2011-11-11 Final Data Sheet 12
Updated at April 28, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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