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FF450R07ME4B11BOSA1
IGBT Module, Dual, 560 A, 1.55 V, 1.45 kW, 150 °C, Module
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: INFINEON
- Product type: IGBT Modules
- Product Range: EconoDUAL 3
- IGBT Technology: IGBT 4 [Trench/Field Stop]
- IGBT Termination: Stud
- Power Dissipation: 1.45kW
- IGBT Configuration: Dual
- Transistor Mounting: Panel
- Transistor Polarity: N Channel
- DC Collector Current: 560A
- Power Dissipation Pd: 1.45kW
- Transistor Case Style: Module
- Operating Temperature Max: 150°C
- Junction Temperature Tj Max: 150°C
- Continuous Collector Current: 560A
- Collector Emitter Voltage Max: 650V
- Collector Emitter Voltage V(br)ceo: 650V
- Collector Emitter Saturation Voltage: 1.55V
- Collector Emitter Saturation Voltage Vce(on): 1.55V
| Delivery and price | |
|---|---|
| Units per pack | 1 |
| Price | 80.81 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
IGBT-Modul IGBT-Module FF450R07ME4_B11 VCES = 650V IC nom = 450A / ICRM = 900A - Hybrid-Nutzfahrzeuge - • Motorantriebe - - USV-Systeme - - - - - - - Hohe Kurzschlussrobustheit, selbstlimitierender Kurzschlussstrom - - - T - - - • High Short Circuit Capability, Self Limiting Short - - - T - - - - - Kupferbodenplatte - - - - - - - • - Standardgehäuse - **Digit** 1 ## Technische�Information�/�Technical�Information IGBT-Modul IGBT-Module FF450R07ME4_B11 **==> picture [86 x 38] intentionally omitted <==** ## **IGBT,Wechselrichter�/�IGBT,Inverter** ## **Höchstzulässige�Werte�/�Maximum�Rated�Values** |TechnischeInformation/TechnicalInformation<br>FF450R07ME4_B11<br>IGBT-Modul<br>IGBT-Module|| |---|---| |preparedby:KY<br>approvedby:KV<br>dateofpublication:2014-12-15<br>revision:3.1<br>**IGBT,Wechselrichter/IGBT,Inverter**<br>**HöchstzulässigeWerte/MaximumRatedValues**<br>Kollektor-Emitter-Sperrspannung<br>Collector-emittervoltage<br>Tvj= 25°C<br>VCES<br>650<br>V<br>Kollektor-Dauergleichstrom<br>ContinuousDCcollectorcurrent<br>TC= 70°C, Tvj max= 175°C<br>TC= 25°C, Tvj max= 175°C<br>IC nom<br>IC<br>450<br>560<br>A<br>A<br>PeriodischerKollektor-Spitzenstrom<br>Repetitivepeakcollectorcurrent<br>tP= 1 ms<br>ICRM<br>900<br>A<br>Gesamt-Verlustleistung<br>Totalpowerdissipation<br>TC= 25°C, Tvj max= 175°C<br>Ptot<br>1450<br>W<br>Gate-Emitter-Spitzenspannung<br>Gate-emitterpeakvoltage<br>VGES<br>+/-20<br>V<br>**CharakteristischeWerte/CharacteristicValues**<br>min.<br>typ.<br>max.<br>Kollektor-Emitter-Sättigungsspannung<br>Collector-emittersaturationvoltage<br>IC= 450 A, VGE= 15 V<br>IC= 450 A, VGE= 15 V<br>IC= 450 A, VGE= 15 V<br>VCE sat<br>1,55<br>1,70<br>1,75<br>1,95<br>V<br>V<br>V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Gate-Schwellenspannung<br>Gatethresholdvoltage<br>IC= 7,20 mA, VCE= VGE, Tvj= 25°C<br>VGEth<br>5,10<br>5,80<br>6,40<br>V<br>Gateladung<br>Gatecharge<br>VGE= -15 V ... +15 V<br>QG<br>4,80<br>µC<br>InternerGatewiderstand<br>Internalgateresistor<br>Tvj= 25°C<br>RGint<br>0,67<br>Ω<br>Eingangskapazität<br>Inputcapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cies<br>27,5<br>nF<br>Rückwirkungskapazität<br>Reversetransfercapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cres<br>0,82<br>nF<br>Kollektor-Emitter-Reststrom<br>Collector-emittercut-offcurrent<br>VCE= 650 V, VGE= 0 V, Tvj= 25°C<br>ICES<br>1,0<br>mA<br>Gate-Emitter-Reststrom<br>Gate-emitterleakagecurrent<br>VCE= 0 V, VGE= 20 V, Tvj= 25°C<br>IGES<br>100<br>nA<br>Einschaltverzögerungszeit,induktiveLast<br>Turn-ondelaytime,inductiveload<br>IC= 450 A, VCE= 300 V<br>VGE= ±15 V<br>RGon= 1,8Ω<br>td on<br>0,085<br>0,089<br>0,093<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Anstiegszeit,induktiveLast<br>Risetime,inductiveload<br>IC= 450 A, VCE= 300 V<br>VGE= ±15 V<br>RGon= 1,8Ω<br>tr<br>0,082<br>0,087<br>0,088<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Abschaltverzögerungszeit,induktiveLast<br>Turn-offdelaytime,inductiveload<br>IC= 450 A, VCE= 300 V<br>VGE= ±15 V<br>RGoff= 1,8Ω<br>td off<br>0,48<br>0,51<br>0,52<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Fallzeit,induktiveLast<br>Falltime,inductiveload<br>IC= 450 A, VCE= 300 V<br>VGE= ±15 V<br>RGoff= 1,8Ω<br>tf<br>0,067<br>0,093<br>0,099<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>EinschaltverlustenergieproPuls<br>Turn-onenergylossperpulse<br>IC= 450 A, VCE= 300 V, LS= 30 nH<br>VGE= ±15 V, di/dt = 4900 A/µs (Tvj= 150°C)<br>RGon= 1,8Ω<br>Eon<br>3,40<br>4,60<br>4,90<br>mJ<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>AbschaltverlustenergieproPuls<br>Turn-offenergylossperpulse<br>IC= 450 A, VCE= 300 V, LS= 30 nH<br>VGE= ±15 V, du/dt = 2600 V/µs (Tvj= 150°C)<br>RGoff= 1,8Ω<br>Eoff<br>23,5<br>28,5<br>30,0<br>mJ<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Kurzschlußverhalten<br>SCdata<br>VGE ≤15 V, VCC= 360 V<br>VCEmax= VCES-LsCE·di/dt<br>ISC<br>2400<br>A<br>Tvj= 150°C<br>tP ≤10 µs,<br>Wärmewiderstand,ChipbisGehäuse<br>Thermalresistance,junctiontocase<br>proIGBT/perIGBT<br>RthJC<br>0,102 K/W<br>Wärmewiderstand,GehäusebisKühlkörper<br>Thermalresistance,casetoheatsink<br>proIGBT/perIGBT<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)<br>RthCH<br>0,039<br>K/W<br>TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions<br>Tvj op<br>-40<br>150<br>°C|| 2 IGBT-Modul IGBT-Module FF450R07ME4_B11 ## Technische�Information�/�Technical�Information **==> picture [86 x 38] intentionally omitted <==** ## **Diode,�Wechselrichter�/�Diode,�Inverter** ## **Höchstzulässige�Werte�/�Maximum�Rated�Values** |PeriodischeSpitzensperrspannung<br>Repetitivepeakreversevoltage|Tvj= 25°C|VRRM|650|V| |---|---|---|---|---| |Dauergleichstrom<br>ContinuousDCforwardcurrent||IF|450|A| |PeriodischerSpitzenstrom<br>Repetitivepeakforwardcurrent|tP= 1 ms|IFRM|900|A| |Grenzlastintegral<br>I²t-value|VR= 0 V, tP= 10 ms, Tvj= 125°C<br>VR= 0 V, tP= 10 ms, Tvj= 150°C|I²t|15000<br>14500<br>|A²s<br>A²s| ## **Charakteristische�Werte�/�Characteristic�Values** |||||||| |---|---|---|---|---|---|---| |**CharakteristischeWerte/CharacteristicValues**|||min.|typ.|max.|| |Durchlassspannung<br>Forwardvoltage|IF= 450 A, VGE= 0 V<br>IF= 450 A, VGE= 0 V<br>IF= 450 A, VGE= 0 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|VF||1,55<br>1,50<br>1,45|1,95|V<br>V<br>V| |Rückstromspitze<br>Peakreverserecoverycurrent|IF= 450 A, - diF/dt = 4900 A/µs (Tvj=150°C)<br>VR= 300 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|IRM||185<br>270<br>285||A<br>A<br>A| |Sperrverzögerungsladung<br>Recoveredcharge|IF= 450 A, - diF/dt = 4900 A/µs (Tvj=150°C)<br>VR= 300 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Qr||26,5<br>30,0<br>35,5||µC<br>µC<br>µC| |AbschaltenergieproPuls<br>Reverserecoveryenergy|IF= 450 A, - diF/dt = 4900 A/µs (Tvj=150°C)<br>VR= 300 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Erec||5,90<br>8,90<br>10,5||mJ<br>mJ<br>mJ| |Wärmewiderstand,ChipbisGehäuse<br>Thermalresistance,junctiontocase|proDiode/perdiode|RthJC|||0,165|K/W| |Wärmewiderstand,GehäusebisKühlkörper<br>Thermalresistance,casetoheatsink|proDiode/perdiode<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)|RthCH||0,04||K/W| |TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions||Tvj op|-40||150|°C| ## **NTC-Widerstand�/�NTC-Thermistor** ## **Charakteristische�Werte�/�Characteristic�Values** |**NTC-Widerstand/NTC-Thermistor**<br>|**NTC-Widerstand/NTC-Thermistor**<br>|||||| |---|---|---|---|---|---|---| |**CharakteristischeWerte/CharacteristicValues**|||min.|typ.|max.|| |Nennwiderstand<br>Ratedresistance|TC= 25°C|R25||5,00||kΩ| |AbweichungvonR100<br>DeviationofR100|TC= 100°C, R100= 493Ω|∆R/R|-5||5|%| |Verlustleistung<br>Powerdissipation|TC= 25°C|P25|||20,0|mW| |B-Wert<br>B-value|R2= R25exp [B25/50(1/T2- 1/(298,15 K))]|B25/50||3375||K| |B-Wert<br>B-value|R2= R25exp [B25/80(1/T2- 1/(298,15 K))]|B25/80||3411||K| |B-Wert<br>B-value|R2= R25exp [B25/100(1/T2- 1/(298,15 K))]|B25/100||3433||K| Angaben�gemäß�gültiger�Application�Note. Specification�according�to�the�valid�application�note. prepared�by:�KY date�of�publication:�2014-12-15 approved�by:�KV revision:�3.1 3 IGBT-Modul IGBT-Module FF450R07ME4_B11 ## Technische�Information�/�Technical�Information **==> picture [86 x 38] intentionally omitted <==** ## **Modul�/�Module** |**Modul/Module**||||||| |---|---|---|---|---|---|---| |Isolations-Prüfspannung<br>Isolationtestvoltage|RMS, f = 50 Hz, t = 1 min.|VISOL|2,5|||kV| |MaterialModulgrundplatte<br>Materialofmodulebaseplate|||Cu|||| |InnereIsolation<br>Internalisolation|Basisisolierung(Schutzklasse1,EN61140)<br>basicinsulation(class1,IEC61140)||Al2O3|||| |Kriechstrecke<br>Creepagedistance|Kontakt-Kühlkörper/terminaltoheatsink<br>Kontakt-Kontakt/terminaltoterminal||14,5<br>13,0|||mm| |Luftstrecke<br>Clearance|Kontakt-Kühlkörper/terminaltoheatsink<br>Kontakt-Kontakt/terminaltoterminal||12,5<br>10,0|||mm| |VergleichszahlderKriechwegbildung<br>Comperativetrackingindex||CTI||> 200||| ||||min.|typ.|max.|| |Modulstreuinduktivität<br>Strayinductancemodule||LsCE||20||nH| |Modulleitungswiderstand,Anschlüsse-<br>Chip<br>Moduleleadresistance,terminals-chip|TC=25°C,proSchalter/perswitch|RCC'+EE'||1,00||mΩ| |Lagertemperatur<br>Storagetemperature||Tstg|-40||125|°C| |Anzugsdrehmomentf.Modulmontage<br>Mountingtorqueformodulmounting|SchraubeM5-Montagegem.gültigerApplikationsschrift<br>ScrewM5-Mountingaccordingtovalidapplicationnote|M|3,00||6,00|Nm| |Anzugsdrehmomentf.elektr.Anschlüsse<br>Terminalconnectiontorque|SchraubeM6-Montagegem.gültigerApplikationsschrift<br>ScrewM6-Mountingaccordingtovalidapplicationnote|M|3,0|-|6,0|Nm| |Gewicht<br>Weight||G||345||g| prepared�by:�KY date�of�publication:�2014-12-15 approved�by:�KV revision:�3.1 4 ## IGBT-Modul IGBT-Module ## FF450R07ME4_B11 **==> picture [487 x 596] intentionally omitted <==** **----- Start of picture text -----**<br> IC =f(V CE) IC =f(V CE)<br>VGE =15V Tvj = 150°C<br>900 SS | , 900 es | 7<br>Tvj = 25°C VGE = 19V<br>Tvj = 125°C VGE = 17V<br>Tvj = 150°C VGE = 15V<br>750 750 VGE = 13V<br>iy VGE = 11V // i /<br>VGE = 9V<br>/ c a ; /<br>600 600<br>/ / /<br>450 450<br>300 300<br>UAT |<br>I,/, /<br>150 150<br>Y<br>y<br>i<br>wo“ p<br>a d<br>0 0<br>0,0 0,4 0,8 1,2 1,6 2,0 2,4 2,8 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0<br>VCE [V] VCE [V]<br>Ubertragungscharakteristik IGBT,Wechselrichter (typisch) Schaltverluste IGBT,Wechselrichter (typisch)<br>transfer characteristic IGBT,Inverter (typical) switching losses IGBT, Inverter (typical)<br>IC =f(V GE) Eon =f(l),E C off =f(I C)<br>VCE =20V VGE =+15V,R Gon =18 Ω ,R Goff =18 Ω ,V CE =300V<br>900 100<br>Tvj = 25°C Eon, Tvj = 125°C<br>Tvj = 125°C Eoff, Tvj = 125°C<br>Tvj = 150°C Eon, Tvj = 150°C<br>750 E J ) | & | Eoff, Tvj = 150°C BERR<br>80<br>— hs Pe er<br>600<br>Ww<br>iy 60 BERERERREEEP<br>/ [_] BERRAe<br>450<br>|i [ile] te BERRAZe 77<br>40 “|<br>300<br>Aa<br>ae<br>20<br>150<br>a<br>Py Ep eae<br>0 0<br>5 6 7 8 9 10 11 12 0 150 300 450 600 750 900<br>VGE [V] IC [A]<br> [A] [A]<br>IC IC<br> [A]<br>IC E [mJ]<br>**----- End of picture text -----**<br> 5 IGBT-Modul IGBT-Module ## FF450R07ME4_B11 **==> picture [485 x 606] intentionally omitted <==** **----- Start of picture text -----**<br> switching losses IGBT,Inverter (typical) transient thermal impedance IGBT, Inverter<br>Eon =f(R),E G off =f(R G) ZthJC = f(t)<br>VGE =+15V,1 C =450A,V CE =300V<br>100 1<br>Eon, Tvj = 125°C | ZthJC : IGBT iy aa a eee<br>H— HE + +L +H]<br>| r EEoffon, T, T e vjvj = 125°C = 150°C Rsee TT|a et ee |<br>Eoff, Tvj = 150°C<br>80 $$ _<___——. “A, a |<br>PT. | |ldlC Ww PEUTIC UNI TM EIT ET<br>0,1<br>60 PF]PF ] ofof || fofft LyaFaJoo|4a| |ee|PTatT TT eeTTIeee et T eT<br>40 eee Ae ee |ST a TT<br>0,01<br>[eke<br>aay | LUIZi se ase | oa eS<br>20 | | [Af fo fd YATACT TT Tt TT<br>i: 1 2 3 4<br>r ] A] | yy fd 7a | ri[K/W]: 0,00759 0,01554 | 0,07309 0,00565 |<br>τ i[s]: 0,0003 0,00633 0,0367 1,67943<br>0 Pf] tT tt 0,001 1<br>0 2 4 6 8 10 12 14 16 0,0001 0,001 0,01 0,1 1 10<br>RG [ Ω ] t [s]<br>Sicherer Ruckwarts-Arbeitsbereich IGBT,Wechselrichter Durchlasskennlinie der Diode, Wechselrichter (typisch)<br>(RBSOA) forward characteristic of Diode, Inverter (typical)<br>reverse bias safe operating area IGBT,Inverter (RBSOA) IF =f(V F)<br>IC =f(V CE)<br>VGE =415V,R Goff =1.8 Ω ,T vj =150°C<br>1000 900<br>IC, Modul Tvj = 25°C<br>900 IC, Chip Tvj = 125°C<br>Tvj = 150°C<br>750<br>800<br>700<br>600<br>600<br>500 450<br>400<br>300<br>300<br>200<br>150<br>100<br>0 0<br>0 100 200 300 400 500 600 700 0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6 1,8 2,0<br>VCE [V] VF [V]<br> [K/W]<br>E [mJ]<br>thJC<br>Z<br> [A] [A]<br>IC IF<br>**----- End of picture text -----**<br> 6 ## IGBT-Modul IGBT-Module ## FF450R07ME4_B11 **==> picture [487 x 596] intentionally omitted <==** **----- Start of picture text -----**<br> Erec =f(I F) Erec =f(R G)<br>RGon t'5 Ω ,V CE =300V IF = 480A, V CE = 300 V<br>14 14<br>Erec, Tvj = 125°C Erec, Tvj = 125°C<br>Erec, Tvj = 150°C Erec, Tvj = 150°C<br>12 fF ee 12 Ey)<br>PRE ECE | -<br>eo<br>10 PPT | | re eet 10 PRI ) ] ) |<br>8 P| | eee 8 SS<br>6 BEES AReeeeeePL VA 6 EXC\.<br>Pi ye | tt | Ne<br>4 PAT yt ttTE TTttTE TTtt tttT 4 S| NEMSS Ff<br>2 Py | it | tt | 2 Py) | | Pose<br>CEE EEE Sree<br>0 0<br>0 150 300 450 600 750 900 0 2 4 6 8 10 12 14 16 18<br>IF [A] RG [ Ω ]<br>Transienter Warmewiderstand Diode, Wechselrichter NTC-Widerstand-Temperaturkennlinie (typisch)<br>transient thermal impedance Diode, Inverter NTC-Thermistor-temperature characteristic (typical)<br>ZthJC =f (t) R=f(T)<br>1 100000<br>Se ZthJC : Diode eee es t pe Rtyp<br>PTLN TT TETTTT TTTET TTTTT aa e eeeeeee ee<br>a a A e e<br>ML mic KE<br>0,1 10000<br>aSesYT TT eoei ateTa ta ea NTesES NN se ee<br>TTATTT TT a Ne a eeee<br>[NUN] [MAGLIO] 2 ee eee<br>SP [iON)] pot NE<br>0,01 ATT 1000<br>VIM EP ON<br>a ee el NS<br>PTa [TT] TTT ae TT ee lll TT aa eeeeeeee<br>i: 1 2 3 4<br>ri[K/W]: 0,01757 0,03075 0,10847 0,00781<br>2 τ i[s]: 0,00023 0,00599 a 0,03565 1,10676 | a<br>0,001 |Amm o «=| 100 |<br>0,0001 0,001 0,01 0,1 1 10 0 20 40 60 80 100 120 140 160<br>t [s] TC [°C]<br>E [mJ] E [mJ]<br>] Ω<br> [K/W]<br>R[<br>thJC<br>Z<br>**----- End of picture text -----**<br> 7 ## Technische�Information�/�Technical�Information IGBT-Modul IGBT-Module FF450R07ME4_B11 **==> picture [86 x 38] intentionally omitted <==** ## **Schaltplan�/�circuit_diagram_headline** **==> picture [140 x 138] intentionally omitted <==** ## **Gehäuseabmessungen�/�package�outlines** **==> picture [17 x 4] intentionally omitted <==** **----- Start of picture text -----**<br> In fin e o n<br>**----- End of picture text -----**<br> **==> picture [37 x 31] intentionally omitted <==** **==> picture [37 x 32] intentionally omitted <==** **==> picture [37 x 31] intentionally omitted <==** **==> picture [37 x 32] intentionally omitted <==** **==> picture [319 x 25] intentionally omitted <==** **----- Start of picture text -----**<br> prepared�by:�KY date�of�publication:�2014-12-15<br>approved�by:�KV revision:�3.1<br>**----- End of picture text -----**<br> 8 **==> picture [61 x 19] intentionally omitted <==** **----- Start of picture text -----**<br> IGBT-Modul<br>IGBT-Module<br>**----- End of picture text -----**<br> ## FF450R07ME4_B11 ## **Nutzungsbedingungen** **==> picture [42 x 8] intentionally omitted <==** **----- Start of picture text -----**<br> application.<br>**----- End of picture text -----**<br> 9
Updated at February 9, 2023
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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