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FF400R17KE4EHOSA1
IGBT Module, Dual, Common Emitter, 400 A, 1.95 V, 150 °C, Module
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: INFINEON
- Product type: IGBT Modules
- Transistor Polarity:Dual N Channel; DC Collector Current:400A; Collector Emitter Saturation Voltage Vce(on):1.95V; Collector Emitter Voltage V(br)ceo:1.7kV; Transistor Case Style:Module;
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 7Pins
- Product Range: -
- IGBT Technology: IGBT 4 [Trench/Field Stop]
- IGBT Termination: Stud
- Power Dissipation: -
- IGBT Configuration: Dual, Common Emitter
- Transistor Mounting: Panel
- Transistor Polarity: Dual N Channel
- DC Collector Current: 400A
- Transistor Case Style: Module
- Operating Temperature Max: 150°C
- Junction Temperature Tj Max: 150°C
- Continuous Collector Current: 400A
- Collector Emitter Voltage Max: 1.7kV
- Collector Emitter Voltage V(br)ceo: 1.7kV
- Collector Emitter Saturation Voltage: 1.95V
- Collector Emitter Saturation Voltage Vce(on): 1.95V
| Delivery and price | |
|---|---|
| Units per pack | 10 |
| Price | 161.05 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
IGBT-Modul IGBT-Module FF400R17KE4_E VCES = 1700V IC nom = 400A / ICRM = 800A - Hochleistungsumrichter - • Motorantriebe • USV-Systeme • Windgeneratoren - - CEsat - • Sehr grof§e • VCEsat mit - - - - - Standardgehäuse - - - - - - CEsat - • Unbeatable • VCEsat - - - - - **Digit** 1 ## Technische�Information�/�Technical�Information IGBT-Modul IGBT-Module FF400R17KE4_E **==> picture [86 x 38] intentionally omitted <==** ## **Vorläufige�Daten Preliminary�Data** |TechnischeInformation/TechnicalInformation<br>FF400R17KE4_E<br>IGBT-Modul<br>IGBT-Module|| |---|---| |preparedby:AKB<br>approvedby:MK<br>dateofpublication:2016-07-15<br>revision:V2.0<br>**VorläufigeDaten**<br>**PreliminaryData**<br>**IGBT,Wechselrichter/IGBT,Inverter**<br>**HöchstzulässigeWerte/MaximumRatedValues**<br>Kollektor-Emitter-Sperrspannung<br>Collector-emittervoltage<br>Tvj= 25°C<br>VCES<br>1700<br>V<br>Kollektor-Dauergleichstrom<br>ContinuousDCcollectorcurrent<br>TC= 95°C, Tvj max= 175°C<br>IC nom<br>400<br>A<br>PeriodischerKollektor-Spitzenstrom<br>Repetitivepeakcollectorcurrent<br>tP= 1 ms<br>ICRM<br>800<br>A<br>Gate-Emitter-Spitzenspannung<br>Gate-emitterpeakvoltage<br>VGES<br>+/-20<br>V<br>**CharakteristischeWerte/CharacteristicValues**<br>min.<br>typ.<br>max.<br>Kollektor-Emitter-Sättigungsspannung<br>Collector-emittersaturationvoltage<br>IC= 400 A, VGE= 15 V<br>IC= 400 A, VGE= 15 V<br>IC= 400 A, VGE= 15 V<br>VCE sat<br>1,95<br>2,35<br>2,45<br>2,30<br>V<br>V<br>V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Gate-Schwellenspannung<br>Gatethresholdvoltage<br>IC= 16,0 mA, VCE= VGE, Tvj= 25°C<br>VGEth<br>5,35<br>5,80<br>6,25<br>V<br>Gateladung<br>Gatecharge<br>VGE= -15 V ... +15 V<br>QG<br>4,10<br>µC<br>InternerGatewiderstand<br>Internalgateresistor<br>Tvj= 25°C<br>RGint<br>1,9<br>Ω<br>Eingangskapazität<br>Inputcapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cies<br>36,0<br>nF<br>Rückwirkungskapazität<br>Reversetransfercapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cres<br>1,15<br>nF<br>Kollektor-Emitter-Reststrom<br>Collector-emittercut-offcurrent<br>VCE= 1700 V, VGE= 0 V, Tvj= 25°C<br>ICES<br>1,0<br>mA<br>Gate-Emitter-Reststrom<br>Gate-emitterleakagecurrent<br>VCE= 0 V, VGE= 20 V, Tvj= 25°C<br>IGES<br>400<br>nA<br>Einschaltverzögerungszeit,induktiveLast<br>Turn-ondelaytime,inductiveload<br>IC= 400 A, VCE= 900 V<br>VGE= ±15 V<br>RGon= 0,82Ω<br>td on<br>0,24<br>0,26<br>0,27<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Anstiegszeit,induktiveLast<br>Risetime,inductiveload<br>IC= 400 A, VCE= 900 V<br>VGE= ±15 V<br>RGon= 0,82Ω<br>tr<br>0,04<br>0,05<br>0,05<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Abschaltverzögerungszeit,induktiveLast<br>Turn-offdelaytime,inductiveload<br>IC= 400 A, VCE= 900 V<br>VGE= ±15 V<br>RGoff= 0,82Ω<br>td off<br>0,50<br>0,64<br>0,68<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Fallzeit,induktiveLast<br>Falltime,inductiveload<br>IC= 400 A, VCE= 900 V<br>VGE= ±15 V<br>RGoff= 0,82Ω<br>tf<br>0,09<br>0,15<br>0,17<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>EinschaltverlustenergieproPuls<br>Turn-onenergylossperpulse<br>IC= 400 A, VCE= 900 V, LS= 35 nH<br>VGE= ±15 V, di/dt = 8000 A/µs (Tvj= 150°C)<br>RGon= 0,82Ω<br>Eon<br>89,0<br>125<br>140<br>mJ<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>AbschaltverlustenergieproPuls<br>Turn-offenergylossperpulse<br>IC= 400 A, VCE= 900 V, LS= 35 nH<br>VGE= ±15 V, du/dt = 3200 V/µs (Tvj= 150°C)<br>RGoff= 0,82Ω<br>Eoff<br>73,0<br>120<br>130<br>mJ<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Kurzschlußverhalten<br>SCdata<br>VGE ≤15 V, VCC= 1000 V<br>VCEmax= VCES-LsCE·di/dt<br>ISC<br>1800<br>A<br>Tvj= 150°C<br>tP ≤10 µs,<br>Wärmewiderstand,ChipbisGehäuse<br>Thermalresistance,junctiontocase<br>proIGBT/perIGBT<br>RthJC<br>0,0632 K/W<br>Wärmewiderstand,GehäusebisKühlkörper<br>Thermalresistance,casetoheatsink<br>proIGBT/perIGBT<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)<br>RthCH<br>0,0271<br>K/W<br>TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions<br>Tvj op<br>-40<br>150<br>°C|| |preparedby:AKB|dateofpublication:2016-07-15| |---|---| |approvedby:MK|revision:V2.0| 2 ## Technische�Information�/�Technical�Information IGBT-Modul IGBT-Module FF400R17KE4_E **==> picture [86 x 38] intentionally omitted <==** ## **Vorläufige�Daten Preliminary�Data** ## **Diode,�Wechselrichter�/�Diode,�Inverter Höchstzulässige�Werte�/�Maximum�Rated�Values** |PeriodischeSpitzensperrspannung<br>Repetitivepeakreversevoltage|Tvj= 25°C|VRRM|1700|1700|1700|V| |---|---|---|---|---|---|---| |Dauergleichstrom<br>ContinuousDCforwardcurrent||IF|400|||A| |PeriodischerSpitzenstrom<br>Repetitivepeakforwardcurrent|tP= 1 ms|IFRM|800|||A| |Grenzlastintegral<br>I²t-value|VR= 0 V, tP= 10 ms, Tvj= 125°C<br>VR= 0 V, tP= 10 ms, Tvj= 150°C|I²t|33000<br>28500<br>|||A²s<br>A²s| |**CharakteristischeWerte/CharacteristicValues**|||min.|typ.|max.|| |Durchlassspannung<br>Forwardvoltage|IF= 400 A, VGE= 0 V<br>IF= 400 A, VGE= 0 V<br>IF= 400 A, VGE= 0 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|VF||1,80<br>1,90<br>1,95|2,20|V<br>V<br>V| |Rückstromspitze<br>Peakreverserecoverycurrent|IF= 400 A, - diF/dt = 8000 A/µs (Tvj=150°C)<br>VR= 900 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|IRM||605<br>630<br>640||A<br>A<br>A| |Sperrverzögerungsladung<br>Recoveredcharge|IF= 400 A, - diF/dt = 8000 A/µs (Tvj=150°C)<br>VR= 900 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Qr||105<br>170<br>190||µC<br>µC<br>µC| |AbschaltenergieproPuls<br>Reverserecoveryenergy|IF= 400 A, - diF/dt = 8000 A/µs (Tvj=150°C)<br>VR= 900 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Erec||55,5<br>97,0<br>110||mJ<br>mJ<br>mJ| |Wärmewiderstand,ChipbisGehäuse<br>Thermalresistance,junctiontocase|proDiode/perdiode|RthJC|||0,106|K/W| |Wärmewiderstand,GehäusebisKühlkörper<br>Thermalresistance,casetoheatsink|proDiode/perdiode<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)|RthCH||0,0260||K/W| |TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions||Tvj op|-40||150|°C| prepared�by:�AKB approved�by:�MK date�of�publication:�2016-07-15 revision:�V2.0 3 ## Technische�Information�/�Technical�Information IGBT-Modul IGBT-Module FF400R17KE4_E **==> picture [86 x 38] intentionally omitted <==** ## **Vorläufige�Daten Preliminary�Data** ## **Modul�/�Module** |**Modul/Module**||||||| |---|---|---|---|---|---|---| |Isolations-Prüfspannung<br>Isolationtestvoltage|RMS, f = 50 Hz, t = 1 min.|VISOL|4,0<br>|||kV| |MaterialModulgrundplatte<br>Materialofmodulebaseplate|||Cu|||| |InnereIsolation<br>Internalisolation|Basisisolierung(Schutzklasse1,EN61140)<br>basicinsulation(class1,IEC61140)||Al2O3|||| |Kriechstrecke<br>Creepagedistance|Kontakt-Kühlkörper/terminaltoheatsink<br>Kontakt-Kontakt/terminaltoterminal||29,0<br>23,0<br>|||mm| |Luftstrecke<br>Clearance|Kontakt-Kühlkörper/terminaltoheatsink<br>Kontakt-Kontakt/terminaltoterminal||23,0<br>11,0<br>|||mm| |VergleichszahlderKriechwegbildung<br>Comperativetrackingindex||CTI||> 400||| ||||min.|typ.|max.|| |Modulstreuinduktivität<br>Strayinductancemodule||LsCE||20||nH| |Modulleitungswiderstand,Anschlüsse-<br>Chip<br>Moduleleadresistance,terminals-chip|TC=25°C,proSchalter/perswitch|RCC'+EE'||0,41||mΩ| |Lagertemperatur<br>Storagetemperature||Tstg|-40||125|°C| |Anzugsdrehmomentf.Modulmontage<br>Mountingtorqueformodulmounting|SchraubeM6-Montagegem.gültigerApplikationsschrift<br>ScrewM6-Mountingaccordingtovalidapplicationnote|M|3,00||6,00|Nm| |Anzugsdrehmomentf.elektr.Anschlüsse<br>Terminalconnectiontorque|SchraubeM6-Montagegem.gültigerApplikationsschrift<br>ScrewM6-Mountingaccordingtovalidapplicationnote|M|2,5|-|5,0|Nm| |Gewicht<br>Weight||G||340||g| prepared�by:�AKB approved�by:�MK date�of�publication:�2016-07-15 revision:�V2.0 4 ## Technische�Information�/�Technical�Information IGBT-Modul IGBT-Module FF400R17KE4_E **==> picture [86 x 38] intentionally omitted <==** ## **Vorläufige�Daten Preliminary�Data** **==> picture [487 x 650] intentionally omitted <==** **----- Start of picture text -----**<br> Ausgangskennlinie�IGBT,Wechselrichter�(typisch) Ausgangskennlinienfeld�IGBT,Wechselrichter�(typisch)<br>output�characteristic�IGBT,Inverter�(typical) output�characteristic�IGBT,Inverter�(typical)<br>IC�=�f�(VCE) IC�=�f�(VCE)<br>VGE�=�15�V Tvj�=�150°C<br>800 800<br>Tvj = 25°C VGE = 20V<br>TTvj vj = 125°C = 150°C VVGE GE = 15V = 12 V<br>VGE = 10V<br>VGE = 9V<br>VGE = 8V<br>600 600<br>400 400<br>200 200<br>0 0<br>0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0<br>VCE [V] VCE [V]<br>Übertragungscharakteristik�IGBT,Wechselrichter�(typisch) Schaltverluste�IGBT,Wechselrichter�(typisch)<br>transfer�characteristic�IGBT,Inverter�(typical) switching�losses�IGBT,Inverter�(typical)<br>IC�=�f�(VGE) Eon�=�f�(IC),�Eoff�=�f�(IC)<br>VCE�=�20�V VGE�=�±15�V,�RGon�=�0.82� Ω ,�RGoff�=�0.82� Ω ,�VCE�=�900�V<br>800 450<br>Tvj = 25°C Eon, Tvj = 125°C<br>TTvj vj = 125°C = 150°C 400 E E onoff, T , T vjvj = 150°C = 125°C<br>Eoff, Tvj = 150°C<br>350<br>600<br>300<br>250<br>400<br>200<br>150<br>200<br>100<br>50<br>0 0<br>5 6 7 8 9 10 11 12 13 0 100 200 300 400 500 600 700 800<br>VGE [V] IC [A]<br>prepared�by:�AKB date�of�publication:�2016-07-15<br>approved�by:�MK revision:�V2.0<br> [A] [A]<br>IC IC<br> [A]<br>IC E [mJ]<br>**----- End of picture text -----**<br> 5 IGBT-Modul IGBT-Module ## FF400R17KE4_E **==> picture [485 x 279] intentionally omitted <==** **----- Start of picture text -----**<br> Eon =f(R),E G off =f(R G) ZthJC =f (t)<br>VGE =+15V,1 C =400A,V CE =900V<br>300 0,1<br>Eon, Tvj = 125°C Z thJC : IGBT<br>Eon, Tvj = 150°C a stiimeeat<br>Eoff, Tvj = 125°C<br>250 Eoff, Tvj = 150°C<br>200<br>150 0,01<br>100<br>50 i: 1 2 3 4<br>ri[K/W]: 0,00408 0,00415 0,0506 0,00437<br>τ i[s]: 0,000167 0,00283 0,047 0,569<br>0 0,001<br>0 1 2 3 4 5 6 7 8 9 10 0,001 0,01 0,1 1 10<br>RG [ Ω ] t [s]<br> [K/W]<br>E [mJ]<br>thJC<br>Z<br>**----- End of picture text -----**<br> ## **(RBSOA)** **==> picture [34 x 9] intentionally omitted <==** **----- Start of picture text -----**<br> IF =f(V F)<br>**----- End of picture text -----**<br> **==> picture [486 x 271] intentionally omitted <==** **----- Start of picture text -----**<br> IC =f(V CE)<br>VGE =415V,R Goff +=082 Ω ,T vj =150°C<br>900 800<br>IC, Modul Tvj = 25°C<br>800 IC, Chip TTvj vj = 125°C = 150°C<br>700<br>600<br>600 //<br>//<br>//<br>500 I<br>400 7 /<br>400 ih<br>Uf<br>V4<br>300<br>7<br>200<br>200<br>100<br>0 coer t 0 |<br>0 200 400 600 800 1000 1200 1400 1600 1800 0,0 0,5 1,0 1,5 2,0 2,5 3,0<br>VCE [V] VF [V]<br> [A] [A]<br>IC IF<br>**----- End of picture text -----**<br> 6 IGBT-Modul IGBT-Module ## FF400R17KE4_E **==> picture [485 x 596] intentionally omitted <==** **----- Start of picture text -----**<br> Erec =f (I F) Erec =f(R G)<br>RGon =0.82 Ω ,V CE =900V IF =400A,V CE =900V<br>150 150<br>Erec, Tvj = 125°C Erec, Tvj = 125°C<br>Erec, Tvj = 150°C Erec, Tvj = 150°C<br>125 ~ 125<br>~ -_ —<br>a7 ><br>100 7 a 100 ~>N<br>75 75<br>50 /// 50<br>/<br>25 25<br>0 0<br>0 100 200 300 400 500 600 700 800 0 1 2 3 4 5 6 7 8 9 10<br>IF [A] RG [ Ω ]<br>Transienter Warmewiderstand Diode, Wechselrichter<br>transient thermal impedance Diode, Inverter<br>ZthJC =f (t)<br>1<br>ZthJC : Diode<br>0,1 aeee eet eeea<br>Po rT<br>72<br>0,01<br>CAH<br>A es<br>Po<br>i: 1 2 3 4<br>ri[K/W]: 0,00794 0,0609 0,0302 0,00696<br>tirs τ i[s]: 0,00149 0,0329 0,123 1,14<br>0,001<br>0,001 0,01 0,1 1 10<br>t [s]<br>E [mJ] E [mJ]<br> [K/W]<br>thJC<br>Z<br>**----- End of picture text -----**<br> 7 **==> picture [313 x 46] intentionally omitted <==** **----- Start of picture text -----**<br> Technische�Information�/�Technical�Information<br>IGBT-Modul<br>IGBT-Module FF400R17KE4_E<br>**----- End of picture text -----**<br> **==> picture [86 x 38] intentionally omitted <==** **==> picture [477 x 331] intentionally omitted <==** **----- Start of picture text -----**<br> Vorläufige�Daten<br>Preliminary�Data<br>Schaltplan�/�Circuit�diagram<br>Gehäuseabmessungen�/�Package�outlines<br>Infineon<br>**----- End of picture text -----**<br> **==> picture [320 x 27] intentionally omitted <==** **----- Start of picture text -----**<br> prepared�by:�AKB date�of�publication:�2016-07-15<br>approved�by:�MK revision:�V2.0<br>**----- End of picture text -----**<br> 8 ## IGBT-Modul IGBT-Module ## FF400R17KE4_E ## **Nutzungsbedingungen** ## **WARNHINWEIS** ## **WARNINGS** 9
Updated at April 28, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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