FF400R12KE3HOSA1

IGBT Module, Dual [Half Bridge], 580 A, 1.7 V, 2 kW, 125 °C, Module

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Manufacturer: INFINEON
Product type:
Transistor Polarity:N Channel; DC Collector Current:580A; Collector Emitter Saturation Voltage Vce(on):1.7V; Power Dissipation Pd:2kW; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor
SVHC: No SVHC (25-Jun-2025)
Product Range: 62mm C
IGBT Technology: IGBT 3 [Trench/Field Stop]
IGBT Termination: Tab
Power Dissipation: 2kW
IGBT Configuration: Dual [Half Bridge]
Transistor Mounting: Panel
Transistor Polarity: N Channel
DC Collector Current: 580A
Power Dissipation Pd: 2kW
Transistor Case Style: Module
Operating Temperature Max: 125°C
Junction Temperature Tj Max: 125°C
Continuous Collector Current: 580A
Collector Emitter Voltage Max: 1.2kV
Collector Emitter Voltage V(br)ceo: 1.2kV
Collector Emitter Saturation Voltage: 1.7V
Collector Emitter Saturation Voltage Vce(on): 1.7V

Delivery and price
Units per pack	10
Price	142.98 €
Current stock	10+
Lead time	30 days

Datasheet

Updated at March 30, 2026