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FF400R07A01E3S6XKSA2
IGBT Module, Dual, 400 A, 1.65 V, 1.5 kW, 175 °C, Module
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: INFINEON
- Product type: IGBT Modules
- Available until stocks are exhausted
- SVHC: No SVHC (27-Jun-2018)
- Product Range: HybridPACK
- IGBT Technology: IGBT 3 [Trench/Field Stop]
- IGBT Termination: Solder
- Power Dissipation: 1.5kW
- IGBT Configuration: Dual
- Transistor Mounting: Panel
- DC Collector Current: 400A
- Power Dissipation Pd: 1.5kW
- Transistor Case Style: Module
- Operating Temperature Max: 175°C
- Junction Temperature Tj Max: 175°C
- Continuous Collector Current: 400A
- Collector Emitter Voltage Max: 700V
- Collector Emitter Voltage V(br)ceo: 700V
- Collector Emitter Saturation Voltage: 1.65V
- Collector Emitter Saturation Voltage Vce(on): 1.65V
| Delivery and price | |
|---|---|
| Units per pack | 10 |
| Price | 114.55 € |
| Current stock | 200+ |
| Lead time | 30 days |
Datasheet
# FF400R07A01E3_S6 **FF400R07A01E3_S6** Double Side Cooled Module VCES = 700V IC nom = 400A ## **Description** - • - - - - - - T - • T - - The HybridPACK[TM] DSC S1 is a very compact half-bridge module targeting hybrid and electric vehicles. The module is based on Infineon’s long-term experience developing IGBT power modules and Trench-Field-Stop IGBTs including matching diodes with enhanced softness. Additionally, on-die integrated current sensor and temperature sensor allow precise monitoring of IGBT state. These features enable enhanced protection and intelligent control of the system. The innovative and small package is designed for Double Sided Cooling (DSC) with superior thermal performance. The low stray inductance and increased blocking voltage support the design of systems with a very high efficiency. Furthermore, new material combinations and assembly technologies enable best thermal and electrical performance at highest reliability and mechanical robustness. - - FF400R07A01E3_S6 SP001171964 Final Data Sheet 2 **FF400R07A01E3_S6 Double�Side�Cooled�Module** **==> picture [146 x 65] intentionally omitted <==** ## **2�����IGBT,Inverter** ## **2.1����Maximum�Rated�Values** |**2.1MaximumRatedValues**||||||| |---|---|---|---|---|---|---| |**Parameter**|**Conditions**|**Symbol**||**Value**||**Unit**| |Collector-emittervoltage|Tvj= 25°C|VCES||700||V| |ContinuousDCcollectorcurrent|TC= 75°C, Tvj max= 175°C|IC nom||400||A| |Repetitivepeakcollectorcurrent|tP= 1 ms|ICRM||800||A| |Totalpowerdissipation|TC= 25°C, Tvj max= 175°C|Ptot||1500||W| |Gate-emitterpeakvoltage||VGES||+/-20||V| |**2.2CharacteristicValues**|||min.|typ.|max.|| |Collector-emittersaturationvoltage|IC= 400 A, VGE= 15 V<br>IC= 400 A, VGE= 15 V<br>IC= 400 A, VGE= 15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|VCE sat||1.65<br>1.90<br>2.00|2.30|V| |Gatethresholdvoltage|IC= 4.85 mA, VCE= VGE<br>Tvj= 25°C|VGEth|5.00|5.80|6.50|V| |Gatecharge|VGE= -15 V ... 15 V|QG||2.90||µC| |Internalgateresistor|Tvj= 25°C|RGint||0.0||Ω| |Inputcapacitance|f = 1 MHz, VCE= 25 V, VGE= 0 V<br>Tvj= 25°C|Cies||18.0||nF| |Reversetransfercapacitance|f = 1 MHz, VCE= 25 V, VGE= 0 V<br>Tvj= 25°C|Cres||0.50||nF| |Collector-emittercut-offcurrent|VCE= 450 V, VGE= 0 V<br>Tvj= 25°C|ICES|||0.1|mA| |Gate-emitterleakagecurrent|VCE= 0 V, VGE= 20 V<br>Tvj= 25°C|IGES|||400|nA| |Turn-ondelaytime,inductiveload|IC= 400 A, VCE= 300 V<br>VGE= -8/+15 V<br>RGon= 3.6Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|td on||0.06<br>0.06<br>0.06||µs| |Risetime,inductiveload|IC= 400 A, VCE= 300 V<br>VGE= -8/+15 V<br>RGon= 3.6Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|tr||0.08<br>0.08<br>0.08||µs| |Turn-offdelaytime,inductiveload|IC= 400 A, VCE= 300 V<br>VGE= -8/+15 V<br>RGoff= 3.6Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|td off||0.43<br>0.44<br>0.48||µs| |Falltime,inductiveload|IC= 400 A, VCE= 300 V<br>VGE= -8/+15 V<br>RGoff= 3.6Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|tf||0.04<br>0.04<br>0.05||µs| |Turn-onenergylossperpulse|IC= 400 A, VCE= 300 V, LS= 25 nH<br>VGE= -8/+15 V<br>RGon= 3.6Ω<br>di/dt = 5.1 kA/µs (Tvj = 150°C)<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Eon||5.70<br>7.40<br>7.90||mJ| |Turn-offenergylossperpulse|IC= 400 A, VCE= 300 V, LS= 25 nH<br>VGE= -8/+15 V<br>RGoff= 3.6Ω<br>du/dt = 3.0 kV/µs (Tvj = 150°C)<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Eoff||14.5<br>16.5<br>18.0||mJ| |SCdata|VGE ≤15 V, VCC= 360 V<br>VCEmax= VCES-LsCE·di/dt<br>Tvj= 150°C<br>tP ≤6 µs,|ISC||1900||A| |Thermalresistance,junctiontocase|perIGBT|RthJC|||0.1001)|K/W| |Thermalresistance,casetoheatsink|perIGBT<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)<br>ClampingForceF=700N|RthCH||0.1401)||K/W| |Temperatureunderswitchingconditions|topcontinuous<br>for 18s within a period of 600s, occurrence maximum 200<br>times over lifetime|Tvj op|-40<br>150||150<br>175|°C| 1) with double sided cooling, evaluation according to HybridPackTM DSC application note Final Data Sheet 3 3 V3.3,��2017-07-28 **FF400R07A01E3_S6 Double�Side�Cooled�Module** **==> picture [146 x 65] intentionally omitted <==** ## **3�����Diode,�Inverter** ## **3.1����Maximum�Rated�Values** |**3.1MaximumRatedValues**||||||| |---|---|---|---|---|---|---| |**Parameter**|**Conditions**|**Symbol**||**Value**||**Unit**| |Repetitivepeakreversevoltage|Tvj= 25°C|VRRM||700||V| |ContinuousDCforwardcurrent||IF||400||A| |Repetitivepeakforwardcurrent|tP= 1 ms|IFRM||800||A| |I²t-value|VR= 0 V, tP= 10 ms, Tvj= 125°C|I²t||9000||A²s| |**3.2CharacteristicValues**|||min.|typ.|max.|| |Forwardvoltage|IF= 400 A, VGE= 0 V<br>IF= 400 A, VGE= 0 V<br>IF= 400 A, VGE= 0 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|VF||1.95<br>1.85<br>1.80|2.55|V| |Peakreverserecoverycurrent|IF= 400 A, - diF/dt = 5000 A/µs (Tvj= 150°C)<br>VR= 300 V<br>VGE= -8 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|IRM||135<br>210<br>220||A| |Recoveredcharge|IF= 400 A, - diF/dt = 5000 A/µs (Tvj= 150°C)<br>VR= 300 V<br>VGE= -8 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Qr||12.0<br>23.0<br>27.0||µC| |Reverserecoveryenergy|IF= 400 A, - diF/dt = 5000 A/µs (Tvj= 150°C)<br>VR= 300 V<br>VGE= -8 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Erec||2.80<br>5.80<br>6.60||mJ| |Thermalresistance,junctiontocase|perdiode|RthJC|||0.1501)|K/W| |Thermalresistance,casetoheatsink|perdiode<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)<br>ClampingForceF=700N|RthCH||0.2001)||K/W| |Temperatureunderswitchingconditions|topcontinuous<br>for 18s within a period of 600s, occurrence maximum 200<br>times over lifetime|Tvj op|-40<br>150||150<br>175|°C| ## **4�����Module** |**4Module**||||||| |---|---|---|---|---|---|---| |**Parameter**|**Conditions**|**Symbol**||**Value**||**Unit**| |Isolationtestvoltage|RMS, f = 50 Hz, t = 1 min.|VISOL|2.5<br>|||kV| |Materialofmodulebaseplate|||Cu|||| |Internalisolation|basicinsulation(class1,IEC61140)||Al2O3|||| |Creepagedistance|terminaltoheatsink<br>terminaltoterminal|dCreep|3.5<br>|||mm| |Clearance|terminaltoheatsink<br>terminaltoterminal|dClear|3.5<br>|||mm| |Comperativetrackingindex||CTI||> 600||| ||||min.|typ.<br>max.||| |Strayinductancemodule||LsCE||15||nH| |Storagetemperature||Tstg|-40||125|°C| |Terminalconnectiontorque|ScrewM5|M||-||Nm| |Mounting force per clamp||F||-|900|N| |Weight||G||30||g| ## **5�����Temperature�Sensor** |**5TemperatureSensor**||||||| |---|---|---|---|---|---|---| |**Parameter**|**Conditions**|**Symbol**|**Min**|**Typ**|**Max**|**Unit**| |Forwardvoltage|ITS= 1.00 mA, Tvj= 150°C<br>ITS= 1.00 mA, Tvj= 25°C|VTS||2.12<br>2.91||V| 1) with double sided cooling, evaluation according to HybridPackTM DSC application note Final Data Sheet 4 V3.3,��2017-07-28 **FF400R07A01E3_S6 Double�Side�Cooled�Module** **==> picture [146 x 65] intentionally omitted <==** ## **6�����Current�Sensor** |**6CurrentSensor**||||||| |---|---|---|---|---|---|---| |**Parameter**|**Conditions**|**Symbol**|**Min**|**Typ**|**Max**|**Unit**| |Outputvoltage|VCE= 2.35 V, IC= 800 A<br>Rsense= 1.60Ω, Tvj= 25°C<br>VGE = 15 V|Vsense||0.64||V| Final Data Sheet V3.3,��2017-07-28 5 **FF400R07A01E3_S6** Double Side Cooled Module **==> picture [504 x 620] intentionally omitted <==** **----- Start of picture text -----**<br> IC =f(V CE) IC =f(V CE)<br>VGE =15V Tvj = 150°C<br>800 a 800<br>Tvj = 25°C VGE = 19V<br>700 TTvjvj = 125°C = 150°C / 700 VVGEGE = 17V = 15V / / / ral<br>/4/ VVGEGE = 13V = 11V /<br>VGE = 9V<br>600 600<br>500 /J) [A] f 500 4 [“—]<br>vA li a<br>400 400<br>a C , /<br>300 / L/ 300 y'/ a /<br>if Me/<br>200 200<br>7<br>100 f VL 100 A<br>PLZ} LA<br>0 0<br>0,0 0,3 0,6 0,9 1,2 1,5 1,8 2,1 2,4 2,7 3,0 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0<br>VCE [V] VCE [V]<br>transfer characteristic IGBT,Inverter (typical) switching losses IGBT, Inverter (typical)<br>IC =f(V GE) Eon =f(l),E C off =fi(l C)<br>VCE =20V VGE =-8/+15V,R Gon =36 Ω ,R Goff =36 Ω ,V CE =300V<br>800 50<br>Tvj = 25°C Eon, Tvj = 125°C<br>T Ld vj = 125°C 45 = Eoff, T . vj = 125°C<br>700 Tvj = 150°C Eon, Tvj = 150°C<br>Eoff, Tvj = 150°C<br>/| EO<br>40<br>600<br>T TL Ps y,<br>‘1 35 ‘<br>500 Pe] | TT TAL : “<br>30<br>; v<br>/ Pt | tt | et<br>400 25<br>. [Fa]<br>ERA<br>20<br>300<br>15<br>/ Pt | a |<br>200<br>| aera<br>10<br>we<br>100<br>\7 5 a LL weer<br>0 lea 0 _<br>27 [UA] | | ) TT<br>5 6 7 8 9 10 11 12 13 0 100 200 300 400 500 600 700 800<br>VGE [V] IC [A]<br> [A] [A]<br>IC IC<br> [A]<br>IC E [mJ]<br>**----- End of picture text -----**<br> Final Data Sheet 6 **FF400R07A01E3_S6** Double Side Cooled Module **==> picture [503 x 620] intentionally omitted <==** **----- Start of picture text -----**<br> Eon =f(R),E G off =f(R G) ZthJH = f(t)<br>VGE =-8/+15V,1 C =400A,V CE =300V<br>35 1<br>—————— Eon, Tvj = 125°C e ZthJH : IGBT s<br>Eoff, Tvj = 125°C a e ee<br>30 E= EEonoff, T, Tvjvj = 150°C = 150°C yl 4 He es e o se eetel<br>Va PT ETT ET TT<br>25 ef | AA=y, SnaIL| ee|a Lu ell<br>20<br>0,1<br>15 pay4JA | IlPrCEIee UIT<br>a 4A ee ee ll<br>WA a A ee eee ee<br>10 Pe)yy aaA rig eeee<br>5 i: 1 2 3 4<br>ri[K/W]: 0,0158 0,0348 0,132 0,0531<br>τ i[s]: 0,001 0,0214 0,1799 0,7798<br>Lb !<br>0 0,01<br>3 4 5 6 7 8 9 10 11 12 0,01 0,1 1 10<br>RG [ Ω ] t [s]<br>I reverse C CE bias ) safe operating area IGBT,Inverter (RBSOA) forwara IF F) characteristic of Diode, Inverter (typical)<br>VGE SVR Goff =3.6 Ω ,T vj =150°C on<br>900 800 ss<br>Ic, Modul Tvj = 25°C<br>Sat Tvj = 125°C F<br>800 700 Tvj = 150°C<br>700<br>ee ee |ee 600 Oe E e e neeneevi<br>600<br>500<br>ttt se<br>500<br>PoP tt) Pye<br>ae7<br>400<br>/<br>400<br>po //<br>300<br>PHWV<br>300<br>200 EEE AL<br>ef //)<br>200<br>MI) A<br>eeLS.<br>ee 100 /<br>100 eeoet /<br>0 0<br>0 100 200 300 400 500 0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6 1,8 2,0 2,2 2,4 2,6<br>VCE [V] VF [V]<br> [K/W]<br>E [mJ]<br>thJH<br>Z<br> [A] [A]<br>IC IF<br>**----- End of picture text -----**<br> Final Data Sheet 7 Double Side **FF400R07A01E3_S6** Cooled Module **==> picture [502 x 297] intentionally omitted <==** **----- Start of picture text -----**<br> Erec =fil F) Erec =f(R G)<br>RGon !'5 Ω ,V CE =300V IF = 400A, V CE = 300 V<br>10 7<br>Erec, Tvj = 125°C Erec, Tvj = 125°C<br>9 E Erec, Tvj = 150°C J = Erec, Tvj = 150°C<br>6 HAN a<br>8 Boe ce)a A Ee |<br>7 p ato]? 5 LLANNENob<br>6<br>pepe7 ma 4 PNABNx<br>5<br>3<br>pe SR<br>4<br>3 TACT TTP<br>2<br>/<br>2<br>A | tt | | tl<br>1<br>Agceeere HTT<br>1<br>0 0<br>0 100 200 300 400 500 600 700 800 0 1 2 3 4 5 6 7 8 9 10 11 12<br>IF [A] RG [ Ω ]<br>E [mJ] E [mJ]<br>**----- End of picture text -----**<br> ZthJH **==> picture [244 x 273] intentionally omitted <==** **----- Start of picture text -----**<br> 1<br>ZthJH : Diode<br>iT Tt Tt<br>PT TT T TT<br>S a a r<br>FFP PEACE THT HTT<br>0,1 en a<br>deee eee<br>oT<br>PT TTT AT<br>PT TTY<br>a<br>LAT Psa<br>0,01 Oy<br>ee ee<br>Ate<br>7 | TT et ett<br>ee eee ll<br>eeee ell<br>i: 1 2 3 4<br>ri[K/W]: 0,0525 0,0217 0,1714 0,0983<br>τ i[s]: 0,0186 0,0525 0,135 0,5303<br>a |<br>AME’ oo o<br>0,001<br>0,001 0,01 0,1 1 10<br>t [s]<br> [K/W]<br>thJH<br>Z<br>**----- End of picture text -----**<br> Final Data Sheet 8 Double Side **FF400R07A01E3_S6** Cooled Module |Pin Number<br>1|Symbol<br>I/O<br>Function<br>P<br>DC Supply (+)<br>Positive Supply<br>~~ee ee~~|Symbol<br>I/O<br>Function<br>P<br>DC Supply (+)<br>Positive Supply<br>~~ee ee~~|Function<br>Positive Supply| |---|---|---|---| |2<br>3|N<br>DC Supply (-)<br>U<br>AC Output<br>~~—-—~~|Negative Supply<br>U Phase Output|Negative Supply<br>U Phase Output| |4|T+L<br>Input|Temperature Sensor Plus Low Side|Temperature Sensor Plus Low Side| |5<br>6<br>7<br>8<br>9<br>10<br>11<br>12<br>13<br>14|T-L<br>Output<br>Temperature Sensor Minus Low Side<br>EL<br>Output<br>IGBT Emitter Output Low Side<br>CSL<br>Output<br>IGBT Current Sensor Output Low Side<br>GL<br>Input<br>Gate Input Low Side<br>T+H<br>Input<br>Temperature Sensor Plus High Side<br>T-H<br>Output<br>Temperature Sensor Minus High Side<br>EH<br>Output<br>IGBT Emitter Output High Side<br>CSH<br>Output<br>IGBT Current Sensor output High Side<br>GH<br>Input<br>Gate Input High Side<br>PS<br>Output<br>P-Terminal Voltage Sensing / IGBT Collector Output<br>~~a~~<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee ee~~<br>~~es~~<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee ee~~<br>~~ee~~<br>~~ee~~||Temperature Sensor Minus Low Side<br>IGBT Emitter Output Low Side<br>IGBT Current Sensor Output Low Side<br>Gate Input Low Side<br>Temperature Sensor Plus High Side<br>Temperature Sensor Minus High Side<br>IGBT Emitter Output High Side<br>IGBT Current Sensor output High Side<br>Gate Input High Side<br>P-Terminal Voltage Sensing / IGBT Collector Output| Final Data Sheet 9 **FF400R07A01E3_S6** Double Side Cooled Module Final Data Sheet 10 **FF400R07A01E3_S6** Double Side Cooled Module Data Matrix **Encoding** ASCII Text 16x16 **Standard** IEC24720 and IEC16022 **Content Digit** Module Serial Number 1 - 5 71549 Module Material Number 6 - 11 142846 Production Order Number 12 - 19 55054991 Datecode (Production Year) 20 - 21 15 Datecode (Production Week) 22 - 23 30 ~~_ P| —~~ **Example** ay 71549142846550549911530 10.2 Packing Code Code128 **Encoding** Code Set A 34 digits **Standard** IEC8859-1 **Content Identifier Digit** Backend Construction Number X 2 - 9 95056609 Production Lot Number 1T 12 - 19 2X0003E0 Serial Number S 21 - 25 754389 Date Code 9D 28 - 31 1139 Box Quantity Q 33 - 34 15 ~~_ P| —~~ **Example** X950566091T2X0003E0S754389D1139Q15 Final Data Sheet 11 **FF400R07A01E3_S6 Double�Side�Cooled�Module** **==> picture [146 x 65] intentionally omitted <==** ## **Revision�History** Major changes since previous revision |Revision History|Revision History|| |---|---|---| |**Reference**|**Date**|**Description**| |V1.0|2015-03-26|Initial Version| |V1.1|2015-04-07|Extension of target data| |V2.0|2016-02-02|Update of target data| |V3.0|2016-11-07|Final Datasheet| |V3.1|2016-11-08|Change of product name in description| |V3.2|2016-12-13|Changes in description| |V3.3|2017-07-28|Update mechanical drawing| Final Data Sheet 12 V3.3,��2017-07-28 ## Double Side **FF400R07A01E3_S6** Cooled Module ## **Information** (http://www.infineon.com) ## **Warnings** ## **Trademarks** Last update 2011-11-11 Final Data Sheet 13
Updated at April 28, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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