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FF300R12ME4B11BPSA1
IGBT Module, Dual, 450 A, 1.75 V, 1.6 kW, 150 °C, Module
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: INFINEON
- Product type: IGBT Modules
- Transistor Polarity:Dual N Channel; DC Collector Current:450A; Collector Emitter Saturation Voltage Vce(on):1.75V; Power Dissipation Pd:1.6kW; Collector Emitter Voltage V(br)ceo:1.2k
- SVHC: No SVHC (25-Jun-2025)
- Product Range: EconoDUAL 3
- IGBT Technology: IGBT 4 [Trench/Field Stop]
- IGBT Termination: Stud
- Power Dissipation: 1.6kW
- IGBT Configuration: Dual
- Transistor Mounting: Panel
- Transistor Polarity: Dual N Channel
- DC Collector Current: 450A
- Power Dissipation Pd: 1.6kW
- Transistor Case Style: Module
- Operating Temperature Max: 150°C
- Junction Temperature Tj Max: 150°C
- Continuous Collector Current: 450A
- Collector Emitter Voltage Max: 1.2kV
- Collector Emitter Voltage V(br)ceo: 1.2kV
- Collector Emitter Saturation Voltage: 1.75V
- Collector Emitter Saturation Voltage Vce(on): 1.75V
| Delivery and price | |
|---|---|
| Units per pack | 10 |
| Price | 112.37 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
IGBT-Module IGBT-modules
## FF300R12ME4_B11
VCES = 1200V IC nom = 300A / ICRM = 600A
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1
## Technische�Information�/�Technical�Information
IGBT-Module IGBT-modules FF300R12ME4_B11
**==> picture [86 x 38] intentionally omitted <==**
## **Vorläufige�Daten Preliminary�Data**
## **IGBT,Wechselrichter�/�IGBT,Inverter Höchstzulässige�Werte�/�Maximum�Rated�Values**
|TechnischeInformation/TechnicalInformation<br>FF300R12ME4_B11<br>IGBT-Module<br>IGBT-modules||
|---|---|
|preparedby:MB<br>approvedby:MK<br>dateofpublication:2013-11-05<br>revision:2.0<br>**VorläufigeDaten**<br>**PreliminaryData**<br>**IGBT,Wechselrichter/IGBT,Inverter**<br>**HöchstzulässigeWerte/MaximumRatedValues**<br>Kollektor-Emitter-Sperrspannung<br>Collector-emittervoltage<br>Tvj= 25°C<br>VCES<br>1200<br>V<br>Kollektor-Dauergleichstrom<br>ContinuousDCcollectorcurrent<br>TC= 100°C, Tvj max= 175°C<br>TC= 25°C, Tvj max= 175°C<br>IC nom<br>IC<br>300<br>450<br>A<br>A<br>PeriodischerKollektor-Spitzenstrom<br>Repetitivepeakcollectorcurrent<br>tP= 1 ms<br>ICRM<br>600<br>A<br>Gesamt-Verlustleistung<br>Totalpowerdissipation<br>TC= 25°C, Tvj max= 175°C<br>Ptot<br>1600<br>W<br>Gate-Emitter-Spitzenspannung<br>Gate-emitterpeakvoltage<br>VGES<br>+/-20<br>V<br>**CharakteristischeWerte/CharacteristicValues**<br>min.<br>typ.<br>max.<br>Kollektor-Emitter-Sättigungsspannung<br>Collector-emittersaturationvoltage<br>IC= 300 A, VGE= 15 V<br>IC= 300 A, VGE= 15 V<br>IC= 300 A, VGE= 15 V<br>VCE sat<br>1,75<br>2,00<br>2,05<br>2,10<br>V<br>V<br>V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Gate-Schwellenspannung<br>Gatethresholdvoltage<br>IC= 11,5 mA, VCE= VGE, Tvj= 25°C<br>VGEth<br>5,2<br>5,8<br>6,4<br>V<br>Gateladung<br>Gatecharge<br>VGE= -15 V ... +15 V<br>QG<br>2,25<br>µC<br>InternerGatewiderstand<br>Internalgateresistor<br>Tvj= 25°C<br>RGint<br>2,5<br>Ω<br>Eingangskapazität<br>Inputcapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cies<br>18,5<br>nF<br>Rückwirkungskapazität<br>Reversetransfercapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cres<br>1,05<br>nF<br>Kollektor-Emitter-Reststrom<br>Collector-emittercut-offcurrent<br>VCE= 1200 V, VGE= 0 V, Tvj= 25°C<br>ICES<br>3,0<br>mA<br>Gate-Emitter-Reststrom<br>Gate-emitterleakagecurrent<br>VCE= 0 V, VGE= 20 V, Tvj= 25°C<br>IGES<br>400<br>nA<br>Einschaltverzögerungszeit,induktiveLast<br>Turn-ondelaytime,inductiveload<br>IC= 300 A, VCE= 600 V<br>VGE= ±15 V<br>RGon= 1,3Ω<br>td on<br>0,17<br>0,18<br>0,19<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Anstiegszeit,induktiveLast<br>Risetime,inductiveload<br>IC= 300 A, VCE= 600 V<br>VGE= ±15 V<br>RGon= 1,3Ω<br>tr<br>0,05<br>0,05<br>0,05<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Abschaltverzögerungszeit,induktiveLast<br>Turn-offdelaytime,inductiveload<br>IC= 300 A, VCE= 600 V<br>VGE= ±15 V<br>RGoff= 1,3Ω<br>td off<br>0,45<br>0,56<br>0,60<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Fallzeit,induktiveLast<br>Falltime,inductiveload<br>IC= 300 A, VCE= 600 V<br>VGE= ±15 V<br>RGoff= 1,3Ω<br>tf<br>0,07<br>0,11<br>0,12<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>EinschaltverlustenergieproPuls<br>Turn-onenergylossperpulse<br>IC= 300 A, VCE= 600 V, LS= 80 nH<br>VGE= ±15 V, di/dt = 6050 A/µs (Tvj= 150°C)<br>RGon= 1,3Ω<br>Eon<br>9,90<br>17,0<br>19,5<br>mJ<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>AbschaltverlustenergieproPuls<br>Turn-offenergylossperpulse<br>IC= 300 A, VCE= 600 V, LS= 80 nH<br>VGE= ±15 V, du/dt = 3100 V/µs (Tvj= 150°C)<br>RGoff= 1,3Ω<br>Eoff<br>25,0<br>37,5<br>42,0<br>mJ<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Kurzschlußverhalten<br>SCdata<br>VGE ≤15 V, VCC= 800 V<br>VCEmax= VCES-LsCE·di/dt<br>ISC<br>1200<br>A<br>Tvj= 150°C<br>tP ≤10 µs,<br>Wärmewiderstand,ChipbisGehäuse<br>Thermalresistance,junctiontocase<br>proIGBT/perIGBT<br>RthJC<br>0,094 K/W<br>Wärmewiderstand,GehäusebisKühlkörper<br>Thermalresistance,casetoheatsink<br>proIGBT/perIGBT<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)<br>RthCH<br>0,03<br>K/W<br>TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions<br>Tvj op<br>-40<br>150<br>°C||
2
## Technische�Information�/�Technical�Information
IGBT-Module IGBT-modules FF300R12ME4_B11
**==> picture [86 x 38] intentionally omitted <==**
**Vorläufige�Daten Preliminary�Data**
## **Diode,�Wechselrichter�/�Diode,�Inverter**
## **Höchstzulässige�Werte�/�Maximum�Rated�Values**
|PeriodischeSpitzensperrspannung<br>Repetitivepeakreversevoltage|Tvj= 25°C|VRRM|1200|V|
|---|---|---|---|---|
|Dauergleichstrom<br>ContinuousDCforwardcurrent||IF|300|A|
|PeriodischerSpitzenstrom<br>Repetitivepeakforwardcurrent|tP= 1 ms|IFRM|600|A|
|Grenzlastintegral<br>I²t-value|VR= 0 V, tP= 10 ms, Tvj= 125°C<br>VR= 0 V, tP= 10 ms, Tvj= 150°C|I²t|19000<br>15500<br>|A²s<br>A²s|
## **Charakteristische�Werte�/�Characteristic�Values**
||||||||
|---|---|---|---|---|---|---|
|**CharakteristischeWerte/CharacteristicValues**|||min.|typ.|max.||
|Durchlassspannung<br>Forwardvoltage|IF= 300 A, VGE= 0 V<br>IF= 300 A, VGE= 0 V<br>IF= 300 A, VGE= 0 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|VF||1,65<br>1,65<br>1,65|2,10|V<br>V<br>V|
|Rückstromspitze<br>Peakreverserecoverycurrent|IF= 300 A, - diF/dt = 6050 A/µs (Tvj=150°C)<br>VR= 600 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|IRM||335<br>390<br>410||A<br>A<br>A|
|Sperrverzögerungsladung<br>Recoveredcharge|IF= 300 A, - diF/dt = 6050 A/µs (Tvj=150°C)<br>VR= 600 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Qr||30,5<br>58,0<br>67,0||µC<br>µC<br>µC|
|AbschaltenergieproPuls<br>Reverserecoveryenergy|IF= 300 A, - diF/dt = 6050 A/µs (Tvj=150°C)<br>VR= 600 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Erec||19,0<br>29,5<br>34,5||mJ<br>mJ<br>mJ|
|Wärmewiderstand,ChipbisGehäuse<br>Thermalresistance,junctiontocase|proDiode/perdiode|RthJC|||0,15|K/W|
|Wärmewiderstand,GehäusebisKühlkörper<br>Thermalresistance,casetoheatsink|proDiode/perdiode<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)|RthCH||0,046||K/W|
|TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions||Tvj op|-40||150|°C|
## **NTC-Widerstand�/�NTC-Thermistor**
## **Charakteristische�Werte�/�Characteristic�Values**
|**NTC-Widerstand/NTC-Thermistor**<br>|**NTC-Widerstand/NTC-Thermistor**<br>||||||
|---|---|---|---|---|---|---|
|**CharakteristischeWerte/CharacteristicValues**|||min.<br>typ.||max.||
|Nennwiderstand<br>Ratedresistance|TC= 25°C|R25||5,00||kΩ|
|AbweichungvonR100<br>DeviationofR100|TC= 100°C, R100= 493Ω|∆R/R|-5||5|%|
|Verlustleistung<br>Powerdissipation|TC= 25°C|P25|||20,0|mW|
|B-Wert<br>B-value|R2= R25exp [B25/50(1/T2- 1/(298,15 K))]|B25/50||3375||K|
|B-Wert<br>B-value|R2= R25exp [B25/80(1/T2- 1/(298,15 K))]|B25/80||3411||K|
|B-Wert<br>B-value|R2= R25exp [B25/100(1/T2- 1/(298,15 K))]|B25/100||3433||K|
Angaben�gemäß�gültiger�Application�Note. Specification�according�to�the�valid�application�note.
prepared�by:�MB date�of�publication:�2013-11-05 approved�by:�MK revision:�2.0
3
IGBT-Module IGBT-modules
## FF300R12ME4_B11
|Modul / Module|||||||
|---|---|---|---|---|---|---|
|Isolations-Prüfspannung<br>~~Isolation test voltage~~<br>Material Modulgrundplatte<br>Material of module baseplate|RMS, f = 50 Hz, t = 1 min<br>~~ee ~~|VISOL<br> ~~ee~~||2,5<br>Cu||kV|
|Innere Isolation<br>Internal isolation|Basisisolierung (Schutzklasse 1, EN61140)<br>basic insulation (class 1, IEC 61140)|||Al2O3|||
|Kriechstrecke<br>Creepage distance|Kontakt - Kuhlk6rper / terminal to heatsink<br>Kontakt - Kontakt / terminal to terminal|||14,5<br>13,0||mm|
|Luftstrecke<br>Clearance|Kontakt - Kuhlkorper / terminal to heatsink<br>Kontakt - Kontakt / terminal to terminal|||12,5<br>10,0||mm|
|Vergleichszahl der Kriechwegbildung<br>Comperative tracking index||CTI||> 200|||
||||min.|typ.|max.||
|Warmewiderstand, Gehause bis Kuhlk6rper| <br>Thermal resistance, case to heatsink|Paste<br>grease<br> pro Modul / per module<br>= 1 W/(m-k)/<br>= 1 W/(m-k)|RthCH||0,009||K/W|
|Modulstreuinduktivität<br>~~Stray inductance module~~<br>Modulleitungswiderstand, Anschlusse -|~~ee ~~|LsCE<br> ~~ee ee~~|20<br>~~ee~~|||nH|
|Chip|TC<br>= 25°C, pro Schalter / per switch|RCC'+EE'||1,20||mΩ|
|Module lead resistance, terminals - chip|||||||
|Lagertemperatur<br>~~Storage temperature~~<br>Anzugsdrehmoment f. Modulmontage<br>Mounting torque for modul mounting|~~ee ~~<br>Schraube M5<br>- Montage gem. giltiger Applikationsschrift<br>Screw M5<br>- Mounting according to valid application note|Tstg<br>M<br> ~~ee ee~~|-40<br>125<br>3,00<br>-<br>6,00<br>~~ee~~|||°C<br>Nm|
|Anzugsdrehmoment f. elektr. Anschllsse<br>Terminal connection torque||Schraube M6<br>- Montage gem. gultiger Applikationsschrift<br>Screw M6<br>- Mounting according to valid application note|M|3,0|-|6,0|Nm|
|Gewicht<br>Weight||G||345||g|
4
IGBT-Module IGBT-modules
## FF300R12ME4_B11
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**----- Start of picture text -----**<br>
IC =f(V CE) IC =f(V CE)<br>VGE =15V Tvj = 150°C<br>600 a | , 7 600 es|<br>Tvj = 25°C a ra VGE = 19V 7<br>Tvj = 125°C VGE = 17V<br>Tvj = 150°C VGE = 15V<br>500 500 VGE = 13V<br>VGE = 11V<br>Je VGE = 9V : / /<br>400 400<br>ff / : a °<br>300 300<br>7, vA |<br>J<br>200 200<br>/<br>a<br>100 100<br>0 0<br>0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0<br>VCE [V] VCE [V]<br>Ubertragungscharakteristik IGBT,Wechselrichter (typisch) Schaltverluste IGBT,Wechselrichter (typisch)<br>transfer characteristic IGBT,Inverter (typical) switching losses IGBT, Inverter (typical)<br>IC =f(V GE) Eon =f(l),E C off =f(I C)<br>VCE =20V VGE =415V,R Gon =13 Ω ,R Goff =13 Ω ,V CE =600V<br>600 90<br>Tvj = 25°C Eon, Tvj = 125°C<br>Tvj = 125°C 80 Eon, Tvj = 150°C<br>Tvj = 150°C Eoff, Tvj = 125°C<br>500 i Ji | Je Eoff L , Tvj = 150°C EE Ee<br>70<br>Z<br>400 60<br>50<br>300<br>40 /\ ca<br>/<br>Ae a<br>200 30<br>20<br>100<br>10 a ———<br>0 0<br>5 6 7 8 9 10 11 12 13 0 100 200 300 400 500 600<br>VGE [V] IC [A]<br> [A] [A]<br>IC IC<br> [A]<br>IC E [mJ]<br>**----- End of picture text -----**<br>
5
## IGBT-Module IGBT-modules Technische Information FF300R12ME4_B11 / Technical Information
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**----- Start of picture text -----**<br>
Eon =f{(R),E G off =f(R G) ZthJC = f (t)<br>VGE =+15V,1 C =300A,V CE =600V<br>140 1<br>—— Se<br>Eon, Tvj = 125°C HH— i ZthJC : IGBT EEa HH} tH<br>Eon, Tvj = 150°C<br>120 | Eoff, Tvj = 125°C Ti yd dd oo| o TTT<br>Eoff, Tvj = 150°C<br>ea ed a<br>100<br>0,1<br>eee ee<br>80 P) yl] eyZZ | PEEZ 0oSt<br>LY rT TT |<br>60 LO ET |<br>AE CAST MOON GMT<br>0,01<br>40 = Z —_ee Rite er ee VoA2AT Thyee TTTTT<br>17 T TT TT<br>p | A Tt Tt TritT<br>20 y Y | | Ti iff}] —_t-Pir i: 1 2 3 4<br>ri[K/W]: 0,00582 0,03201 0,03104 0,02813<br>τ i[s]: 0,01 0,02 0,05 0,1<br>0 0,001<br>0 2 4 6 8 10 12 14 16 0,001 0,01 0,1 1 10<br>RG [ Ω ] t [s]<br>Sicherer Ruckwarts-Arbeitsbereich IGBT,Wechselrichter Durchlasskennlinie der Diode, Wechselrichter (typisch)<br>(RBSOA) forward characteristic of Diode, Inverter (typical)<br>reverse bias safe operating area IGBT, Inverter (RBSOA) IF =f(V F)<br>IC =f(V CE)<br>VGE =415V,R Goff =1.3 Ω ,T vj =150°C<br>700 600<br>IC, Modul Tvj = 25°C<br>IC, Chip Tvj = 125°C<br>600 Tvj = 150°C<br>500<br>500<br>400<br>400<br>300<br>300<br>200<br>200<br>100<br>100<br>0 0<br>0 200 400 600 800 1000 1200 1400 0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6 1,8 2,0 2,2 2,4<br>VCE [V] VF [V]<br> [K/W]<br>E [mJ]<br>thJC<br>Z<br> [A] [A]<br>IC IF<br>**----- End of picture text -----**<br>
6
IGBT-Module IGBT-modules
## FF300R12ME4_B11
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**----- Start of picture text -----**<br>
Erec =f(I F) Erec =f(R G)<br>RGon 13 Ω ,V CE =600V IF = 300 A, V CE = 600 V<br>50 40<br>Erec, Tvj = 125°C Erec, Tvj = 125°C<br>4540 aTe Erec, Tvj = 150°C ne 35 (ee : Erec, Tvj = 150°C<br>30<br>p e<br>35<br>ca = 25 Np EE<br>30<br>P| pe a | Si_<br>25 ee 20 ee<br>20 eA ONE<br>15<br>15 ae —<br>10<br>Pe ee<br>10<br>5<br>5<br>0 0<br>0 100 200 300 400 500 600 0 2 4 6 8 10 12 14 16<br>IF [A] RG [ Ω ]<br>E [mJ] E [mJ]<br>**----- End of picture text -----**<br>
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ZthJC =f (t) R=f(T)<br>1 100000<br>ZthJC : Diode Rtyp<br>{— et [I ———<br>eee ee ee l ee Se ee<br>PT a TT TTT TTT a e eee ee<br>PT TUT TENE EllTE a e ee e e<br>AL s mo KE<br>0,1 10000<br>a a NT<br>ee a<br>YT TTT Ye TT ES NN se ee<br>PoPT TTA TTT TTT TTT a Ne a eeee<br>ee TE pot NE<br>A ee ie 2 ee eee<br>0,01 a 1000 NS<br>Att ee<br>A a a<br>(7 [| TT TT Titi TT NS<br>rTPt [TT] tA TTT| i: 1 TTT 2 3 TTT 4 pota eeNTeeeeee<br>ri[K/W]: 0,009 0,0495 0,048 0,0435<br>I τ i[s]: l 0,01 0,02 0,05 0,1 ee<br>LM<br>0,001 | msm } «Sf 100 | | ET ET<br>0,001 0,01 0,1 1 10 0 20 40 60 80 100 120 140 160<br>t [s] TC [°C]<br>] Ω<br> [K/W]<br>R[<br>thJC<br>Z<br>**----- End of picture text -----**<br>
7
## Technische�Information�/�Technical�Information
IGBT-Module IGBT-modules FF300R12ME4_B11
## **Schaltplan�/�circuit_diagram_headline**
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## **Vorläufige�Daten Preliminary�Data**
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## **Gehäuseabmessungen�/�package�outlines**
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In fin e o n<br>**----- End of picture text -----**<br>
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prepared�by:�MB date�of�publication:�2013-11-05<br>approved�by:�MK revision:�2.0<br>**----- End of picture text -----**<br>
8
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IGBT-Module<br>IGBT-modules<br>**----- End of picture text -----**<br>
## FF300R12ME4_B11
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Nutzungsbedingungen<br>**----- End of picture text -----**<br>
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application.<br>**----- End of picture text -----**<br>
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Updated at April 28, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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