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FF300R07ME4B11BPSA1
IGBT Module, Dual, 390 A, 1.55 V, 1.1 kW, 150 °C, Module
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: INFINEON
- Product type: IGBT Modules
- SVHC: No SVHC (25-Jun-2025)
- Product Range: EconoDUAL 3
- IGBT Technology: IGBT 4 [Trench/Field Stop]
- IGBT Termination: Press Fit
- Power Dissipation: 1.1kW
- IGBT Configuration: Dual
- Transistor Mounting: Panel
- DC Collector Current: 390A
- Power Dissipation Pd: 1.1kW
- Transistor Case Style: Module
- Operating Temperature Max: 150°C
- Junction Temperature Tj Max: 150°C
- Continuous Collector Current: 390A
- Collector Emitter Voltage Max: 650V
- Collector Emitter Voltage V(br)ceo: 650V
- Collector Emitter Saturation Voltage: 1.55V
- Collector Emitter Saturation Voltage Vce(on): 1.55V
| Delivery and price | |
|---|---|
| Units per pack | 50 |
| Price | 78.29 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
IGBT-Modul IGBT-Module ## FF300R07ME4_B11 VCES = 650V IC nom = 300A / ICRM = 600A - Hybrid-Nutzfahrzeuge - • Motorantriebe - - - • - USV-Systeme - - - - • - Hohe Kurzschlussrobustheit, selbstlimitierender Kurzschlussstrom - High Short Circuit Capability, Self Limiting Short - • - T - T - - - Kupferbodenplatte - - - - • - • - Standardgehäuse - **Digit** 1 IGBT-Modul IGBT-Module FF300R07ME4_B11 ## Technische�Information�/�Technical�Information **==> picture [86 x 38] intentionally omitted <==** ## **IGBT,Wechselrichter�/�IGBT,Inverter** ## **Höchstzulässige�Werte�/�Maximum�Rated�Values** |TechnischeInformation/TechnicalInformation<br>FF300R07ME4_B11<br>IGBT-Modul<br>IGBT-Module|| |---|---| |preparedby:KY<br>approvedby:KV<br>dateofpublication:2014-12-15<br>revision:3.1<br>**IGBT,Wechselrichter/IGBT,Inverter**<br>**HöchstzulässigeWerte/MaximumRatedValues**<br>Kollektor-Emitter-Sperrspannung<br>Collector-emittervoltage<br>Tvj= 25°C<br>VCES<br>650<br>V<br>Kollektor-Dauergleichstrom<br>ContinuousDCcollectorcurrent<br>TC= 80°C, Tvj max= 175°C<br>TC= 25°C, Tvj max= 175°C<br>IC nom<br>IC<br>300<br>390<br>A<br>A<br>PeriodischerKollektor-Spitzenstrom<br>Repetitivepeakcollectorcurrent<br>tP= 1 ms<br>ICRM<br>600<br>A<br>Gesamt-Verlustleistung<br>Totalpowerdissipation<br>TC= 25°C, Tvj max= 175°C<br>Ptot<br>1100<br>W<br>Gate-Emitter-Spitzenspannung<br>Gate-emitterpeakvoltage<br>VGES<br>+/-20<br>V<br>**CharakteristischeWerte/CharacteristicValues**<br>min.<br>typ.<br>max.<br>Kollektor-Emitter-Sättigungsspannung<br>Collector-emittersaturationvoltage<br>IC= 300 A, VGE= 15 V<br>IC= 300 A, VGE= 15 V<br>IC= 300 A, VGE= 15 V<br>VCE sat<br>1,55<br>1,70<br>1,75<br>1,95<br>V<br>V<br>V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Gate-Schwellenspannung<br>Gatethresholdvoltage<br>IC= 4,80 mA, VCE= VGE, Tvj= 25°C<br>VGEth<br>5,10<br>5,80<br>6,40<br>V<br>Gateladung<br>Gatecharge<br>VGE= -15 V ... +15 V<br>QG<br>3,30<br>µC<br>InternerGatewiderstand<br>Internalgateresistor<br>Tvj= 25°C<br>RGint<br>0,67<br>Ω<br>Eingangskapazität<br>Inputcapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cies<br>18,5<br>nF<br>Rückwirkungskapazität<br>Reversetransfercapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cres<br>0,57<br>nF<br>Kollektor-Emitter-Reststrom<br>Collector-emittercut-offcurrent<br>VCE= 650 V, VGE= 0 V, Tvj= 25°C<br>ICES<br>1,0<br>mA<br>Gate-Emitter-Reststrom<br>Gate-emitterleakagecurrent<br>VCE= 0 V, VGE= 20 V, Tvj= 25°C<br>IGES<br>100<br>nA<br>Einschaltverzögerungszeit,induktiveLast<br>Turn-ondelaytime,inductiveload<br>IC= 300 A, VCE= 300 V<br>VGE= ±15 V<br>RGon= 2,2Ω<br>td on<br>0,068<br>0,069<br>0,072<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Anstiegszeit,induktiveLast<br>Risetime,inductiveload<br>IC= 300 A, VCE= 300 V<br>VGE= ±15 V<br>RGon= 2,2Ω<br>tr<br>0,06<br>0,065<br>0,066<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Abschaltverzögerungszeit,induktiveLast<br>Turn-offdelaytime,inductiveload<br>IC= 300 A, VCE= 300 V<br>VGE= ±15 V<br>RGoff= 2,2Ω<br>td off<br>0,38<br>0,41<br>0,42<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Fallzeit,induktiveLast<br>Falltime,inductiveload<br>IC= 300 A, VCE= 300 V<br>VGE= ±15 V<br>RGoff= 2,2Ω<br>tf<br>0,074<br>0,097<br>0,105<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>EinschaltverlustenergieproPuls<br>Turn-onenergylossperpulse<br>IC= 300 A, VCE= 300 V, LS= 30 nH<br>VGE= ±15 V, di/dt = 4500 A/µs (Tvj= 150°C)<br>RGon= 2,2Ω<br>Eon<br>1,80<br>2,80<br>3,25<br>mJ<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>AbschaltverlustenergieproPuls<br>Turn-offenergylossperpulse<br>IC= 300 A, VCE= 300 V, LS= 30 nH<br>VGE= ±15 V, du/dt = 3000 V/µs (Tvj= 150°C)<br>RGoff= 2,2Ω<br>Eoff<br>14,0<br>18,0<br>19,0<br>mJ<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Kurzschlußverhalten<br>SCdata<br>VGE ≤15 V, VCC= 360 V<br>VCEmax= VCES-LsCE·di/dt<br>ISC<br>1400<br>A<br>Tvj= 150°C<br>tP ≤10 µs,<br>Wärmewiderstand,ChipbisGehäuse<br>Thermalresistance,junctiontocase<br>proIGBT/perIGBT<br>RthJC<br>0,138 K/W<br>Wärmewiderstand,GehäusebisKühlkörper<br>Thermalresistance,casetoheatsink<br>proIGBT/perIGBT<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)<br>RthCH<br>0,041<br>K/W<br>TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions<br>Tvj op<br>-40<br>150<br>°C|| 2 IGBT-Modul IGBT-Module FF300R07ME4_B11 ## Technische�Information�/�Technical�Information **==> picture [86 x 38] intentionally omitted <==** ## **Diode,�Wechselrichter�/�Diode,�Inverter** ## **Höchstzulässige�Werte�/�Maximum�Rated�Values** |PeriodischeSpitzensperrspannung<br>Repetitivepeakreversevoltage|Tvj= 25°C|VRRM|650|V| |---|---|---|---|---| |Dauergleichstrom<br>ContinuousDCforwardcurrent||IF|300|A| |PeriodischerSpitzenstrom<br>Repetitivepeakforwardcurrent|tP= 1 ms|IFRM|600|A| |Grenzlastintegral<br>I²t-value|VR= 0 V, tP= 10 ms, Tvj= 125°C<br>VR= 0 V, tP= 10 ms, Tvj= 150°C|I²t|8800<br>7850<br>|A²s<br>A²s| ## **Charakteristische�Werte�/�Characteristic�Values** |||||||| |---|---|---|---|---|---|---| |**CharakteristischeWerte/CharacteristicValues**|||min.|typ.|max.|| |Durchlassspannung<br>Forwardvoltage|IF= 300 A, VGE= 0 V<br>IF= 300 A, VGE= 0 V<br>IF= 300 A, VGE= 0 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|VF||1,55<br>1,50<br>1,45|1,95|V<br>V<br>V| |Rückstromspitze<br>Peakreverserecoverycurrent|IF= 300 A, - diF/dt = 4500 A/µs (Tvj=150°C)<br>VR= 300 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|IRM||150<br>210<br>225||A<br>A<br>A| |Sperrverzögerungsladung<br>Recoveredcharge|IF= 300 A, - diF/dt = 4500 A/µs (Tvj=150°C)<br>VR= 300 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Qr||18,5<br>22,0<br>25,5||µC<br>µC<br>µC| |AbschaltenergieproPuls<br>Reverserecoveryenergy|IF= 300 A, - diF/dt = 4500 A/µs (Tvj=150°C)<br>VR= 300 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Erec||4,05<br>6,45<br>7,45||mJ<br>mJ<br>mJ| |Wärmewiderstand,ChipbisGehäuse<br>Thermalresistance,junctiontocase|proDiode/perdiode|RthJC|||0,215|K/W| |Wärmewiderstand,GehäusebisKühlkörper<br>Thermalresistance,casetoheatsink|proDiode/perdiode<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)|RthCH||0,041||K/W| |TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions||Tvj op|-40||150|°C| ## **NTC-Widerstand�/�NTC-Thermistor** ## **Charakteristische�Werte�/�Characteristic�Values** |**NTC-Widerstand/NTC-Thermistor**<br>|**NTC-Widerstand/NTC-Thermistor**<br>|||||| |---|---|---|---|---|---|---| |**CharakteristischeWerte/CharacteristicValues**|||min.|typ.|max.|| |Nennwiderstand<br>Ratedresistance|TC= 25°C|R25||5,00||kΩ| |AbweichungvonR100<br>DeviationofR100|TC= 100°C, R100= 493Ω|∆R/R|-5||5|%| |Verlustleistung<br>Powerdissipation|TC= 25°C|P25|||20,0|mW| |B-Wert<br>B-value|R2= R25exp [B25/50(1/T2- 1/(298,15 K))]|B25/50||3375||K| |B-Wert<br>B-value|R2= R25exp [B25/80(1/T2- 1/(298,15 K))]|B25/80||3411||K| |B-Wert<br>B-value|R2= R25exp [B25/100(1/T2- 1/(298,15 K))]|B25/100||3433||K| Angaben�gemäß�gültiger�Application�Note. Specification�according�to�the�valid�application�note. prepared�by:�KY date�of�publication:�2014-12-15 approved�by:�KV revision:�3.1 3 IGBT-Modul IGBT-Module FF300R07ME4_B11 ## Technische�Information�/�Technical�Information **==> picture [86 x 38] intentionally omitted <==** ## **Modul�/�Module** |**Modul/Module**||||||| |---|---|---|---|---|---|---| |Isolations-Prüfspannung<br>Isolationtestvoltage|RMS, f = 50 Hz, t = 1 min.|VISOL|2,5|||kV| |MaterialModulgrundplatte<br>Materialofmodulebaseplate|||Cu|||| |InnereIsolation<br>Internalisolation|Basisisolierung(Schutzklasse1,EN61140)<br>basicinsulation(class1,IEC61140)||Al2O3|||| |Kriechstrecke<br>Creepagedistance|Kontakt-Kühlkörper/terminaltoheatsink<br>Kontakt-Kontakt/terminaltoterminal||14,5<br>13,0|||mm| |Luftstrecke<br>Clearance|Kontakt-Kühlkörper/terminaltoheatsink<br>Kontakt-Kontakt/terminaltoterminal||12,5<br>10,0|||mm| |VergleichszahlderKriechwegbildung<br>Comperativetrackingindex||CTI||> 200||| ||||min.|typ.|max.|| |Modulstreuinduktivität<br>Strayinductancemodule||LsCE||20||nH| |Modulleitungswiderstand,Anschlüsse-<br>Chip<br>Moduleleadresistance,terminals-chip|TC=25°C,proSchalter/perswitch|RCC'+EE'||1,00||mΩ| |Lagertemperatur<br>Storagetemperature||Tstg|-40||125|°C| |Anzugsdrehmomentf.Modulmontage<br>Mountingtorqueformodulmounting|SchraubeM5-Montagegem.gültigerApplikationsschrift<br>ScrewM5-Mountingaccordingtovalidapplicationnote|M|3,00||6,00|Nm| |Anzugsdrehmomentf.elektr.Anschlüsse<br>Terminalconnectiontorque|SchraubeM6-Montagegem.gültigerApplikationsschrift<br>ScrewM6-Mountingaccordingtovalidapplicationnote|M|3,0|-|6,0|Nm| |Gewicht<br>Weight||G||345||g| prepared�by:�KY date�of�publication:�2014-12-15 approved�by:�KV revision:�3.1 4 ## IGBT-Modul IGBT-Module ## FF300R07ME4_B11 **==> picture [487 x 596] intentionally omitted <==** **----- Start of picture text -----**<br> IC =f(V CE) IC =f(V CE)<br>VGE =15V Tvj = 150°C<br>600 a / y 600 es | 7<br>Tvj = 25°C VGE = 19V<br>540 f Tvj = 125°C LA et7 540 VGE = 17V L IAL<br>Tvj = 150°C / 7 ; VGE = 15V :<br>VGE = 13V<br>480 | | | ttt / rare 480 VGE = 11V /<br>a VGE = 9V 1 i<br>420 420<br>P e ep Jd ee |<br>ll eee a e<br>360 360<br>eee) Cee<br>300 300<br>240 A 240 eee Jee<br>7 /<br>180 [ 180 /<br>ORERRRE)<br>120 120<br>Gone 0G GnOns ee ee e)<br>lee Ae<br>60 /| 60 f<br>0 CLA“Ly 0 EEY<br>0,0 0,4 0,8 1,2 1,6 2,0 2,4 2,8 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0<br>VCE [V] VCE [V]<br>Ubertragungscharakteristik IGBT,Wechselrichter (typisch) Schaltverluste IGBT,Wechselrichter (typisch)<br>transfer characteristic IGBT,Inverter (typical) switching losses IGBT, Inverter (typical)<br>IC =f(V GE) Eon =f(l),E C off =f(I C)<br>VCE =20V VGE =415V,R Gon =22 Ω ,R Goff =22 Ω ,V CE =300V<br>600 60<br>Tvj = 25°C Eon, Tvj = 125°C<br>540 Tvj = 125°C 55 Eoff, Tvj = 125°C<br>Tvj = 150°C Eon, Tvj = 150°C<br>FL ee 50 ( Eoff, Tvj = 150°C<br>480<br>> E SeRREEe<br>[ 45 | |tt<br>420<br>¢ SERRE<br>40<br>ee<br>360<br>ee 35 nnn<br>300 30<br>ee ee eee<br>25<br>240<br>ee ee eeeee<br>20<br>ee ae<br>180<br>HAE<br>15<br>CCP) eee eee<br>120<br>10<br>AF) ee<br>60<br>5<br>Poe4 et | la<br>0 0<br>| ee<br>5 6 7 8 9 10 11 12 0 100 200 300 400 500 600<br>VGE [V] IC [A]<br> [A] [A]<br>IC IC<br> [A]<br>IC E [mJ]<br>**----- End of picture text -----**<br> 5 IGBT-Modul IGBT-Module ## FF300R07ME4_B11 **==> picture [486 x 606] intentionally omitted <==** **----- Start of picture text -----**<br> switching losses IGBT,Inverter (typical) transient thermal impedance IGBT, Inverter<br>Eon =f(R),E G off =f(R G) ZthJC = f(t)<br>VGE =+15V,1| C =300A,V CE =300V<br>60 ———— 1 oe<br>Eon, Tvj = 125°C ZthJC : IGBT<br>55 Eoff, Tvj = 125°C , oo<br>Eon, Tvj = 150°C<br>50 | Eoff, Tvj = 150°C fH} ff} ft eg Co _ TT__TTT<br>fr an| aConona |<br>45<br>CCEEe Cea) CITIon cn<br>40 0,1<br>3530 Pt | | | | LAr] ] fd Corr<br>25 TT Ss = Ec<br>| | LA [bara cA<br>P| lengeBP ae ya<br>20 0,01<br>15 PET | Aa | ft ty| dd ooai oe<br>/L Pz<br>10 J | VC a Se i: 1 2 ee 3 4 ee l<br>ri[K/W]: 0,01056 0,02813 0,09163 0,00764<br>5 PTATTTTTTTr? 6 τ i[s]: 0,00027 0,00576 0,03717 3,96539<br>PE ooo<br>0 PPE 0,001 f l<br>0 2 4 6 8 10 12 14 16 18 20 22 0,0001 0,001 0,01 0,1 1 10<br>RG [ Ω ] t [s]<br>Sicherer Ruckwarts-Arbeitsbereich IGBT,Wechselrichter Durchlasskennlinie der Diode, Wechselrichter (typisch)<br>(RBSOA) forward characteristic of Diode, Inverter (typical)<br>reverse bias safe operating area IGBT,Inverter (RBSOA) IF =f(V F)<br>IC =f(V CE)<br>VGE 0 V,R Goff =2.2 Ω ,T vj =150°C<br>700 600<br>IC, Modul Tvj = 25°C<br>IC, Chip 540 Tvj = 125°C<br>600 EJ) | F Tvj = 150°C L LL ye<br>a ees a g<br>480<br>500 PPLE) Fe e<br>420<br>360<br>400<br>Sn eet eeeeeees<br>300<br>| ie<br>300<br>COC EEE<br>240 PP eeve /<br>180<br>200<br>120<br>100<br>60<br>0 ef} ft ye 0 n a nan<br>0 100 200 300 400 500 600 700 0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6 1,8 2,0<br>VCE [V] VF [V]<br> [K/W]<br>E [mJ]<br>thJC<br>Z<br> [A] [A]<br>IC IF<br>**----- End of picture text -----**<br> 6 ## IGBT-Modul IGBT-Module ## FF300R07ME4_B11 **==> picture [487 x 596] intentionally omitted <==** **----- Start of picture text -----**<br> Erec =f(I F) Erec =f(R G)<br>RGon 39 Ω ,V CE =300V IF = 300 A, V CE = 300 V<br>10 10<br>Erec, Tvj = 125°C Erec, Tvj = 125°C<br>9 Erec, Tvj = 150°C 9 Erec, Tvj = 150°C<br>Ff ee IE<br>8 8<br>7 7<br>6 6<br>Pitter Tt LAN ETE EEE EE<br>5 5 LAE EE<br>Pi [iv] “LT [ttt] TA<br>4 4<br>Play” Ep LEENA<br>3 3<br>7a CCCP RRRSEL OTE<br>y SSE<br>2 2<br>1 1<br>0 0<br>0 60 120 180 240 300 360 420 480 540 600 0 2 4 6 8 10 12 14 16 18 20 22<br>IF [A] RG [ Ω ]<br>Transienter Warmewiderstand Diode, Wechselrichter NTC-Widerstand-Temperaturkennlinie (typisch)<br>transient thermal impedance Diode, Inverter NTC-Thermistor-temperature characteristic (typical)<br>ZthJC =f (t) R=f(T)<br>1 100000<br>A —E——__—__—__—_——<br>ZthJC : Diode Rtyp<br>tee ol hE ————<br>A [J p<br>PTT TET PETE es s e<br>PETTITTE TTT ETT PET es ee<br>PULTE EINE ETT ETT LUT ry.<br>LTV T HIME THE EM LUMP 10000<br>=iil —S===SS=<br>0,1 | potNE<br>eet ae i A ee Ne ee eee<br>PCPTE 7TTTIT aNNX eee<br>LEHI A ETI EE 1000 ————_————<br>PATA UIT TL LT EE es ee ec IN<br>p24 || qe i: 1 2 3 4 ——<br>ri[K/W]: 0,02492 0,05671 0,12674 0,00857<br>τ i[s]: 0,00021 0,00557 0,03717 3,80109 pT<br>0,01 JN ooo 100 Pt<br>0,0001 0,001 0,01 0,1 1 10 0 20 40 60 80 100 120 140 160<br>t [s] TC [°C]<br>E [mJ] E [mJ]<br>] Ω<br> [K/W]<br>R[<br>thJC<br>Z<br>**----- End of picture text -----**<br> 7 ## Technische�Information�/�Technical�Information IGBT-Modul IGBT-Module FF300R07ME4_B11 **==> picture [86 x 38] intentionally omitted <==** ## **Schaltplan�/�circuit_diagram_headline** **==> picture [140 x 138] intentionally omitted <==** ## **Gehäuseabmessungen�/�package�outlines** **==> picture [17 x 4] intentionally omitted <==** **----- Start of picture text -----**<br> In fin e o n<br>**----- End of picture text -----**<br> **==> picture [37 x 31] intentionally omitted <==** **==> picture [37 x 32] intentionally omitted <==** **==> picture [37 x 31] intentionally omitted <==** **==> picture [37 x 32] intentionally omitted <==** **==> picture [319 x 25] intentionally omitted <==** **----- Start of picture text -----**<br> prepared�by:�KY date�of�publication:�2014-12-15<br>approved�by:�KV revision:�3.1<br>**----- End of picture text -----**<br> 8 **==> picture [61 x 19] intentionally omitted <==** **----- Start of picture text -----**<br> IGBT-Modul<br>IGBT-Module<br>**----- End of picture text -----**<br> ## FF300R07ME4_B11 ## **Nutzungsbedingungen** **==> picture [42 x 8] intentionally omitted <==** **----- Start of picture text -----**<br> application.<br>**----- End of picture text -----**<br> 9
Updated at April 28, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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