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FF2400RB12IP7PBPSA1
IGBT Module, Dual, Common Collector, 2.4 kA, 1.27 V, 20 mW, 150 °C, Module
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- Manufacturer: INFINEON
- Product type: IGBT Modules
- SVHC: No SVHC (25-Jun-2025)
- Product Range: PrimePACK 3+B Series
- IGBT Technology: IGBT 7 [Trench/Field Stop]
- IGBT Termination: Stud
- Power Dissipation: 20mW
- IGBT Configuration: Dual, Common Collector
- Transistor Mounting: Panel
- Transistor Case Style: Module
- Operating Temperature Max: 150°C
- Continuous Collector Current: 2.4kA
- Collector Emitter Voltage Max: 1.2kV
- Collector Emitter Saturation Voltage: 1.27V
| Delivery and price | |
|---|---|
| Units per pack | 1 |
| Price | 755.03 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
**FF2400RB12IP7P PrimePACK[™] 3+ B-series module** ## **PrimePACK[™] 3+ B-series module with TRENCHSTOP[™] IGBT7 and emitter controlled 7 diode and NTC / pre-applied thermal interface material** ## **Features** - Electrical features - VCES = 1200 V - IC nom = 2400 A / ICRM = 4800 A - High current density - Low inductive design - Low V CE,sat - T = 150°C vj,op - Overload operation up to 175°C - TRENCHSTOP[TM] IGBT7 - Mechanical features - High creepage and clearance distances - High power density - Package with CTI > 400 - Pre-applied thermal interface material ## **Potential applications** - Three-level applications - Solar applications - Energy storage systems ## **Product validation** - Qualified for industrial applications according to the relevant tests of IEC 60747, 60749 and 60068 ## **Description** Please read the sections "Important notice" and "Warnings" at the end of this document Datasheet www.infineon.com Revision 1.10 2022-03-17 **FF2400RB12IP7P PrimePACK[™] 3+ B-series module** **==> picture [105 x 47] intentionally omitted <==** **Table of contents** ## **Table of contents** ||**Description**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1| |---|---| ||**Features**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1| ||**Potential applications**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1| ||**Product validation**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1| ||**Table of contents**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2| |**1**|**Package**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3| |**2**|**IGBT, 3-Level**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3| |**3**|**Diode, 3-Level**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5| |**4**|**NTC-Thermistor**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .6| |**5**|**Characteristics diagrams**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7| |**6**|**Circuit diagram**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11| |**7**|**Package outlines**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12| |**8**|**Module label code**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13| ||**Revision history**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14| ||**Disclaimer**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15| Datasheet Revision 1.10 2022-03-17 2 **FF2400RB12IP7P PrimePACK[™] 3+ B-series module** **==> picture [105 x 47] intentionally omitted <==** ## **1 Package** ## **1 Package** |**1**<br>**Package**|**1**<br>**Package**|**1**<br>**Package**|**1**<br>**Package**|**1**<br>**Package**| |---|---|---|---|---| |**Table 1**<br>**Insulation coordination**||||| |**Parameter**|**Symbol**|**Note or test condition**|**Values**|**Unit**| |Isolation test voltage|_V_ISOL|RMS, f = 50 Hz|4.0|kV| |Material of module<br>baseplate|||Cu|| |Creepage distance|_d_Creep|terminal to heatsink|36.0|mm| |Creepage distance|_d_Creep|terminal to terminal|28.0|mm| |Clearance|_d_Clear|terminal to heatsink|21.0|mm| |Clearance|_d_Clear|terminal to terminal|19.0|mm| |Comparative tracking<br>index|_CTI_||>400|| |**Table 2**<br>**Characteristic values**|**Table 2**<br>**Characteristic values**|**Table 2**<br>**Characteristic values**|||||| |---|---|---|---|---|---|---|---| |**Parameter**|**Symbol**|**Note or test condition**||**Values**|||**Unit**| |||||**Min.**|**Typ.**|**Max.**|| |Stray inductance module|_L_sCE||||5||nH| |Module lead resistance,<br>terminals - chip|_R_AA'+CC'|TH=25°C, per switch|||0.045||mΩ| |Module lead resistance,<br>terminals - chip|_R_CC'+EE'|TH=25°C, per switch|||0.045||mΩ| |Storage temperature|_T_stg|||-40||150|°C| |Maximum baseplate<br>operation temperature|_T_BPmax|||||150|°C| |Mounting torque for<br>module mounting|_M_|- Mounting according to<br>valid application note|M5, Screw|3||6|Nm| |Terminal connection<br>torque|_M_|- Mounting according to<br>valid application note|M4, Screw|1.8||2.1|Nm| ||||M8, Screw|8||10|| |Weight|_G_||||1400||g| ## **2** ## **IGBT, 3-Level** |**2**<br>**IGBT, 3-Level**|**2**<br>**IGBT, 3-Level**|**2**<br>**IGBT, 3-Level**|**2**<br>**IGBT, 3-Level**|**2**<br>**IGBT, 3-Level**|**2**<br>**IGBT, 3-Level**| |---|---|---|---|---|---| |**Table 3**<br>**Maximum rated values**|||||| |**Parameter**|**Symbol**|**Note or test condition**||**Values**|**Unit**| |Collector-emitter voltage|_V_CES||_T_vj= 25 °C|1200|V| |Implemented collector<br>current|_I_CN|||2400|A| |Continuous DC collector<br>current|_I_CDC|_T_vj max= 150 °C|_T_H= 30 °C|2400|A| **(table continues...)** Datasheet Revision 1.10 2022-03-17 3 **FF2400RB12IP7P PrimePACK[™] 3+ B-series module** **==> picture [105 x 47] intentionally omitted <==** ## **2 IGBT, 3-Level** |**Table 3**<br>**(continued) Maximum rated values**|**Table 3**<br>**(continued) Maximum rated values**|**Table 3**<br>**(continued) Maximum rated values**|||||| |---|---|---|---|---|---|---|---| |**Parameter**|**Symbol**|**Note or test condition**||**Values**|||**Unit**| |Repetitive peak collector<br>current|_I_CRM|tplimited by Tvj op||4800|||A| |Gate-emitter peak voltage|_V_GES|||±20|||V| ||||||||| |**Table 4**<br>**Characteristic values**|||||||| |**Parameter**|**Symbol**|**Note or test condition**||**Values**|||**Unit**| |||||**Min.**|**Typ.**|**Max.**|| |Collector-emitter<br>saturation voltage|_V_CE sat|_I_C= 2400 A,_V_GE= 15 V|_T_vj= 25 °C||1.27|1.79|V| ||||_T_vj= 125 °C||1.37|1.82|| ||||_T_vj= 150 °C||1.40|1.84|| |Gate threshold voltage|_V_GEth|_I_C= 48 mA, VCE= VGE,_T_vj=|25 °C|5.15|5.80|6.45|V| |Gate charge|_Q_G|_V_GE= ±15 V,_V_CE= 600 V|||38.1||µC| |Internal gate resistor|_R_Gint|_T_vj= 25 °C|||0.23||Ω| |Input capacitance|_C_ies|_f_= 100 kHz,_T_vj= 25 °C,_V_CE= 25 V,_V_GE= 0 V|||325||nF| |Reverse transfer<br>capacitance|_C_res|_f_= 100 kHz,_T_vj= 25 °C,_V_CE= 25 V,_V_GE= 0 V|||1.92||nF| |Collector-emitter cut-of<br>current|_I_CES|_V_CE= 1200 V,_V_GE= 0 V|_T_vj= 25 °C|||5|mA| |Gate-emitter leakage<br>current|_I_GES|_V_CE= 0 V,_V_GE= 20 V,_T_vj= 25 °C||||400|nA| |Turn-on delay time<br>(inductive load)|_t_don|_I_C= 2400 A,_V_CE= 600 V,<br>_V_GE= ±15 V,_R_Gon= 0.4 Ω|_T_vj= 25 °C||0.645||µs| ||||_T_vj= 125 °C||0.785||| ||||_T_vj= 150 °C||0.820||| |Rise time (inductive load)|_t_r|_I_C= 2400 A,_V_CE= 600 V,<br>_V_GE= ±15 V,_R_Gon= 0.4 Ω|_T_vj= 25 °C||0.185||µs| ||||_T_vj= 125 °C||0.210||| ||||_T_vj= 150 °C||0.215||| |Turn-of delay time<br>(inductive load)|_t_dof|_I_C= 2400 A,_V_CE= 600 V,<br>_V_GE= ±15 V,_R_Gof= 3.3 Ω|_T_vj= 25 °C||2.800||µs| ||||_T_vj= 125 °C||2.900||| ||||_T_vj= 150 °C||3.000||| |Fall time (inductive load)|_t_f|_I_C= 2400 A,_V_CE= 600 V,<br>_V_GE= ±15 V,_R_Gof= 3.3 Ω|_T_vj= 25 °C||0.205||µs| ||||_T_vj= 125 °C||0.245||| ||||_T_vj= 150 °C||0.275||| |Turn-on energy loss per<br>pulse|_E_on|_I_C= 2400 A,_V_CE= 600 V,<br>_L_σ= 50 nH,_V_GE= ±15 V,<br>_R_Gon= 0.4 Ω, di/dt =<br>9000 A/µs (Tvj= 150 °C)|_T_vj= 25 °C||110||mJ| ||||_T_vj= 125 °C||205||| ||||_T_vj= 150 °C||240||| ## **(table continues...)** Datasheet Revision 1.10 2022-03-17 4 **FF2400RB12IP7P PrimePACK[™] 3+ B-series module** **==> picture [105 x 47] intentionally omitted <==** ## **3 Diode, 3-Level** |**Table 4**<br>**(continued) Characteristic values**|**Table 4**<br>**(continued) Characteristic values**|**Table 4**<br>**(continued) Characteristic values**|||||| |---|---|---|---|---|---|---|---| |**Parameter**|**Symbol**|**Note or test condition**||**Values**|||**Unit**| |||||**Min.**|**Typ.**|**Max.**|| |Turn-of energy loss per<br>pulse|_E_of|_I_C= 2400 A,_V_CE= 600 V,<br>_L_σ= 50 nH,_V_GE= ±15 V,<br>_R_Gof= 3.3 Ω, dv/dt =<br>1030 V/µs (Tvj= 150 °C)|_T_vj= 25 °C||715||mJ| ||||_T_vj= 125 °C||845||| ||||_T_vj= 150 °C||890||| |Thermal resistance,<br>junction to heat sink|_R_thJH|per IGBT, Valid with IFX pre-applied Thermal<br>Interface Material||||27.6|K/kW| |Temperature under<br>switching conditions|_T_vj op|||-40||150|°C| _Note: R_ thJH _max. value is valid for T_ C _= 110 °C._ ## **3 Diode, 3-Level** |**3**<br>**Diode, 3-Level**|**3**<br>**Diode, 3-Level**|**3**<br>**Diode, 3-Level**|**3**<br>**Diode, 3-Level**|**3**<br>**Diode, 3-Level**|**3**<br>**Diode, 3-Level**| |---|---|---|---|---|---| |**Table 5**<br>**Maximum rated values**|||||| |**Parameter**|**Symbol**|**Note or test condition**||**Values**|**Unit**| |Repetitive peak reverse<br>voltage|_V_RRM||_T_vj= 25 °C|1200|V| |Continuous DC forward<br>current|_I_F|||2400|A| |Repetitive peak forward<br>current|_I_FRM|_t_P= 1 ms||4800|A| ||||||| |**Table 6**<br>**Characteristic values**|||||| |**Parameter**|**Symbol**|**Note or test condition**||**Values**|**Values**|**Values**|**Unit**| |---|---|---|---|---|---|---|---| |||||**Min.**|**Typ.**|**Max.**|| |Forward voltage|_V_F|_I_F= 2400 A,_V_GE= 0 V|_T_vj= 25 °C||1.70|2.03|V| ||||_T_vj= 125 °C||1.65|1.96|| ||||_T_vj= 150 °C||1.60|1.94|| |Peak reverse recovery<br>current|_I_RM|_I_F= 2400 A,_V_R= 600 V,<br>_V_GE= -15 V, -diF/dt =<br>6850 A/µs (Tvj= 150 °C)|_T_vj= 25 °C||735||A| ||||_T_vj= 125 °C||885||| ||||_T_vj= 150 °C||895||| |Recovered charge|_Q_r|_I_F= 2400 A,_V_R= 600 V,<br>_V_GE= -15 V, -diF/dt =<br>6850 A/µs (Tvj= 150 °C)|_T_vj= 25 °C||210||µC| ||||_T_vj= 125 °C||410||| ||||_T_vj= 150 °C||475||| **(table continues...)** Datasheet Revision 1.10 2022-03-17 5 **FF2400RB12IP7P PrimePACK[™] 3+ B-series module** **==> picture [105 x 47] intentionally omitted <==** ## **4 NTC-Thermistor** |**Table 6**<br>**(continued) Characteristic values**|**Table 6**<br>**(continued) Characteristic values**|**Table 6**<br>**(continued) Characteristic values**|||||| |---|---|---|---|---|---|---|---| |**Parameter**|**Symbol**|**Note or test condition**||**Values**|||**Unit**| |||||**Min.**|**Typ.**|**Max.**|| |Reverse recovery energy|_E_rec|_I_F= 2400 A,_V_R= 600 V,<br>_V_GE= -15 V, -diF/dt =<br>6850 A/µs (Tvj= 150 °C)|_T_vj= 25 °C||80||mJ| ||||_T_vj= 125 °C||150||| ||||_T_vj= 150 °C||170||| |Thermal resistance,<br>junction to heat sink|_R_thJH|per diode, Valid with IFX pre-applied<br>Thermal Interface Material||||46.4|K/kW| |Temperature under<br>switching conditions|_T_vj op|||-40||150|°C| _Note: Dynamic data for 3-level valid in conjunction with datasheet FF1800R23IE7, version 1.0._ _T_ vj op _up to 175 °C is allowed for operations in overload conditions. For detailed specifications please refer to AN2021-11._ _R_ thJH _max. value is valid for T_ C _= 95 °C._ ## **4 NTC-Thermistor** |**4**<br>**NTC-Thermistor**|**4**<br>**NTC-Thermistor**|**4**<br>**NTC-Thermistor**||||| |---|---|---|---|---|---|---| |**Table 7**<br>**Characteristic values**||||||| |**Parameter**|**Symbol**|**Note or test condition**|**Values**|||**Unit**| ||||**Min.**|**Typ.**|**Max.**|| |Rated resistance|_R_25|_T_NTC= 25 °C||5||kΩ| |Deviation of R100|Δ_R/R_|_T_NTC= 100 °C,_R_100= 493 Ω|-5||5|%| |Power dissipation|_P_25|_T_NTC= 25 °C|||20|mW| |B-value|_B_25/50|R2= R25exp[B25/50(1/T2-1/(298,15 K))]||3375||K| |B-value|_B_25/80|R2= R25exp[B25/80(1/T2-1/(298,15 K))]||3411||K| |B-value|_B_25/100|R2= R25exp[B25/100(1/T2-1/(298,15 K))]||3433||K| _Note: For detailed specifications please refer to AN2009-10._ Datasheet Revision 1.10 2022-03-17 6 **FF2400RB12IP7P PrimePACK[™] 3+ B-series module** **5 Characteristics diagrams** **5 Characteristics diagrams** **==> picture [105 x 47] intentionally omitted <==** ## **Output characteristic (typical), IGBT, 3-Level** IC = f(VCE) ## VGE = 15 V ## **Output characteristic field (typical), IGBT, 3-Level** IC = f(VCE) ## T = 150 °C vj **==> picture [540 x 587] intentionally omitted <==** **----- Start of picture text -----**<br> 4800 4800<br>4200 4200<br>3600 3600<br>3000 3000<br>2400 2400<br>1800 1800<br>1200 1200<br>600 600<br>0 0<br>0.0 0.5 1.0 1.5 2.0 2.5 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0<br>Transfer characteristic (typical), IGBT, 3-Level Switching losses (typical), IGBT, 3-Level<br>IC = f(VGE) E = f(IC)<br>VCE = 20 V RGoff = 3.3 Ω, RGon = 0.4 Ω, VCE = 600 V, VGE = ± 15 V<br>Ic is limited to 3600A by FF1800R23IE7 module.<br>4800 1600<br>4200 1400<br>3600 1200<br>3000 1000<br>2400 800<br>1800 600<br>1200 400<br>600 200<br>0 0<br>5 6 7 8 9 10 11 12 13 14 0 400 800 1200 1600 2000 2400 2800 3200 3600<br>**----- End of picture text -----**<br> Datasheet Revision 1.10 2022-03-17 7 **FF2400RB12IP7P PrimePACK[™] 3+ B-series module** **==> picture [105 x 47] intentionally omitted <==** ## **5 Characteristics diagrams** ## **Switching losses (typical), IGBT, 3-Level Switching times (typical), IGBT, 3-Level** E = f(RG) t = f(IC) IC = 2400 A, VCE = 600 V, VGE = ± 15 V **==> picture [228 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 2000<br>1800<br>1600<br>1400<br>1200<br>1000<br>800<br>600<br>400<br>200<br>0<br>0 1 2 3 4 5 6 7 8 9<br>**----- End of picture text -----**<br> ## **Switching times (typical), IGBT, 3-Level** ## t = f(RG) RGoff = 3.3 Ω, RGon = 0.4 Ω, VCE = 600 V, VGE = ± 15 V, Tvj = 150 °C **==> picture [229 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 10<br>1<br>0.1<br>0.01<br>0 400 800 1200 1600 2000 2400 2800 3200 3600<br>**----- End of picture text -----**<br> ## **Transient thermal impedance , IGBT, 3-Level** Zth = f(t) IC = 2400 A, VCE = 600 V, VGE = ± 15 V, Tvj = 150 °C **==> picture [228 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 10<br>1<br>0.1<br>0 1 2 3 4 5 6 7 8 9<br>**----- End of picture text -----**<br> **==> picture [229 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 100<br>10<br>1<br>0.1<br>0.001 0.01 0.1 1 10<br>**----- End of picture text -----**<br> Datasheet Revision 1.10 2022-03-17 8 **FF2400RB12IP7P PrimePACK[™] 3+ B-series module** **==> picture [105 x 47] intentionally omitted <==** ## **5 Characteristics diagrams** **Reverse bias safe operating area (RBSOA), IGBT, 3- Level** IC = f(VCE) RGoff = 3.3 Ω, VGE = 15 V, Tvj = 150 °C **==> picture [228 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 6000<br>5400<br>4800<br>4200<br>3600<br>3000<br>2400<br>1800<br>1200<br>600<br>0<br>0 200 400 600 800 1000 1200 1400<br>**----- End of picture text -----**<br> **Gate charge characteristic (typical), IGBT, 3-Level** VGE = f(QG) IC = 2400 A, Tvj = 25 °C **Capacity characteristic (typical), IGBT, 3-Level** C = f(VCE) f = 100 kHz, VGE = 0 V, Tvj = 25 °C **==> picture [229 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 1000<br>100<br>10<br>1<br>0.1<br>0.01<br>0 10 20 30 40 50 60 70 80 90 100<br>**----- End of picture text -----**<br> **Forward characteristic (typical), Diode, 3-Level** IF = f(VF) **==> picture [540 x 262] intentionally omitted <==** **----- Start of picture text -----**<br> 15 4800<br>12<br>4200<br>9<br>3600<br>6<br>3000<br>3<br>0 2400<br>-3<br>1800<br>-6<br>1200<br>-9<br>600<br>-12<br>-15 0<br>0 5 10 15 20 25 30 35 40 0.0 0.5 1.0 1.5 2.0 2.5<br>**----- End of picture text -----**<br> Datasheet Revision 1.10 2022-03-17 9 **FF2400RB12IP7P PrimePACK[™] 3+ B-series module** **==> picture [105 x 47] intentionally omitted <==** ## **5 Characteristics diagrams** ## **Switching losses (typical), Diode, 3-Level** Erec = f(IF) VCE = 600 V, RGon = RGon(IGBT) **Switching losses (typical), Diode, 3-Level** Erec = f(RG) VCE = 600 V, IF = 2400 A **==> picture [540 x 557] intentionally omitted <==** **----- Start of picture text -----**<br> 200 180<br>180 160<br>160<br>140<br>140<br>120<br>120<br>100<br>100<br>80<br>80<br>60<br>60<br>40<br>40<br>20 20<br>0 0<br>0 400 800 1200 1600 2000 2400 2800 3200 3600 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0<br>Transient thermal impedance, Diode, 3-Level Temperature characteristic (typical), NTC-Thermistor<br>Zth = f(t) R = f(TNTC)<br>100 100000<br>10000<br>10 1000<br>100<br>1 10<br>0.001 0.01 0.1 1 10 0 25 50 75 100 125 150 175<br>**----- End of picture text -----**<br> Datasheet Revision 1.10 2022-03-17 10 **FF2400RB12IP7P PrimePACK[™] 3+ B-series module** **==> picture [105 x 47] intentionally omitted <==** ## **6 Circuit diagram** **==> picture [541 x 271] intentionally omitted <==** **----- Start of picture text -----**<br> 6 Circuit diagram<br>NTC 9,11,13<br>6 3<br>4<br>�<br>7<br>5 8<br>NC<br>1<br>2<br>10,12,14<br>**----- End of picture text -----**<br> ## **Figure 1** Datasheet Revision 1.10 2022-03-17 11 **FF2400RB12IP7P PrimePACK[™] 3+ B-series module** **==> picture [105 x 47] intentionally omitted <==** ## **7 Package outlines** **==> picture [177 x 14] intentionally omitted <==** **----- Start of picture text -----**<br> 7 Package outlines<br>**----- End of picture text -----**<br> **==> picture [528 x 386] intentionally omitted <==** **----- Start of picture text -----**<br> C<br>screwing depthmax. 8mm 8x 8x (M2,697) 1,35 A D E (247) 0,35 A D E 3 0,1 26<br>8x 8x max. (2)<br>E<br>36,5 recommended design height<br> 0,35 A B C 1,2 A D E<br>8x<br>2,50,5 Y X<br>0<br>screwing depthmax. 16mm 8x 8x max. (3)<br>36,5 recommended design height0,8 A D E<br>14x 5,5 0,1 0,5 A D E 8x<br>B 14x 38,25<br>117<br>D 8x (M8) 1,8 A D E<br>8x<br> 0,35 A B C<br>M 8x<br>A 0,4 CZ A 8x 5<br>250 1 8x<br>36,5<br>17,7 K<br>Y<br>0 X H K<br> 0,2 A M-M<br>H<br>16,2<br>restricted area for Thermal Interface Material<br>36,5<br>232<br>Dimension in mounted condition ISO 10579<br>Terminal heights measurement at the end of bending radius<br>60,<br>) <br>(86 89<br>36,5<br>117 111 103 93,197 93 78 59 53 41 39 25 14 4 0 33 39 70 78 107 117<br>5,5)<br>(<br>124,2 103 92 53 25 14 0<br>60<br>**----- End of picture text -----**<br> **Figure 2** Datasheet Revision 1.10 2022-03-17 12 **FF2400RB12IP7P PrimePACK[™] 3+ B-series module** **==> picture [105 x 47] intentionally omitted <==** ## **8 Module label code** ## **8 Module label code** |**Module label code**|**Module label code**|**Module label code**|**Module label code**|**Module label code**| |---|---|---|---|---| |Code format|Data Matrix||Barcode Code128|| |Encoding|ASCII text||Code Set A|| |Symbol size|16x16||23 digits|| |Standard|IEC24720 and IEC16022||IEC8859-1|| |||||| |Code content|_Content_<br>Module serial number<br>Module material number<br>Production order number<br>Date code (production year)<br>Date code (production week)|_Digit_<br>1 – 5<br>6 - 11<br>12 - 19<br>20 – 21<br>22 – 23||_Example_<br>71549<br>142846<br>55054991<br>15<br>30| |Example|71549142846550549911530<br>71549142846550549911530|||| ## **Figure 3** Datasheet Revision 1.10 2022-03-17 13 **FF2400RB12IP7P PrimePACK[™] 3+ B-series module** **Revision history** **==> picture [105 x 47] intentionally omitted <==** ## **Revision history** |**Revision history**||| |---|---|---| |**Document revision**|**Date of release**|**Description of changes**| |1.00|2021-04-15|Final datasheet| |1.10|2022-03-17|Final datasheet - update to FF1800R23IE7 Rev. 1.0; Extension of diagrams<br>to 4800A (except of dynamic data, which is limited by FF1800R23IE7)| Datasheet Revision 1.10 2022-03-17 14 ## **Trademarks** All referenced product or service names and trademarks are the property of their respective owners. **Edition 2022-03-17 IMPORTANT NOTICE Published by** The information given in this document shall in no event be regarded as a guarantee of conditions or **Infineon Technologies AG** characteristics (“Beschaffenheitsgarantie”). **81726 Munich, Germany** With respect to any examples, hints or any typical values stated herein and/or any information regarding **© 2022 Infineon Technologies AG** the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities **All Rights Reserved.** of any kind, including without limitation warranties of non-infringement of intellectual property rights of any **Do you have a question about any** third party. **aspect of this document?** In addition, any information given in this document is **Email: erratum@infineon.com** subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning **Document reference** customer’s products and any use of the product of **IFX-ABA765-002** Infineon Technologies in customer’s applications. Please note that this product is not qualified according to the AEC Q100 or AEC Q101 documents of the Automotive Electronics Council. ## **WARNINGS** Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application.
Updated at April 28, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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