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FF225R17ME4BOSA1
IGBT Module, Dual, 340 A, 1.95 V, 1.5 kW, 150 °C, Module
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: INFINEON
- Product type: IGBT Modules
- Transistor Polarity:N Channel; DC Collector Current:340A; Collector Emitter Saturation Voltage Vce(on):1.95V; Power Dissipation Pd:1.5kW; Collector Emitter Voltage V(br)ceo:1.7kV; Transis
- SVHC: No SVHC (25-Jun-2025)
- Product Range: EconoDUAL 3
- IGBT Technology: IGBT 4 [Trench/Field Stop]
- IGBT Termination: Press Fit
- Power Dissipation: 1.5kW
- IGBT Configuration: Dual
- Transistor Mounting: Panel
- Transistor Polarity: N Channel
- DC Collector Current: 340A
- Power Dissipation Pd: 1.5kW
- Transistor Case Style: Module
- Operating Temperature Max: 150°C
- Junction Temperature Tj Max: 150°C
- Continuous Collector Current: 340A
- Collector Emitter Voltage Max: 1.7kV
- Collector Emitter Voltage V(br)ceo: 1.7kV
- Collector Emitter Saturation Voltage: 1.95V
- Collector Emitter Saturation Voltage Vce(on): 1.95V
| Delivery and price | |
|---|---|
| Units per pack | 10 |
| Price | 78.53 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
> IGBT-ModulIGBT-Module FF225R17ME4
VCES = 1700V IC nom = 225A / ICRM = 450A
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> IGBT-ModulIGBT-Module FF225R17ME4
## Technische�Information�/�Technical�Information
**==> picture [86 x 38] intentionally omitted <==**
## **Vorläufige�Daten Preliminary�Data**
## **IGBT,Wechselrichter�/�IGBT,Inverter Höchstzulässige�Werte�/�Maximum�Rated�Values**
|TechnischeInformation/TechnicalInformation<br>FF225R17ME4<br>IGBT-Modul<br>IGBT-Module||
|---|---|
|preparedby:CU<br>approvedby:MK<br>dateofpublication:2014-06-06<br>revision:2.4<br>**VorläufigeDaten**<br>**PreliminaryData**<br>**IGBT,Wechselrichter/IGBT,Inverter**<br>**HöchstzulässigeWerte/MaximumRatedValues**<br>Kollektor-Emitter-Sperrspannung<br>Collector-emittervoltage<br>Tvj= 25°C<br>VCES<br>1700<br>V<br>Kollektor-Dauergleichstrom<br>ContinuousDCcollectorcurrent<br>TC= 100°C, Tvj max= 175°C<br>TC= 25°C, Tvj max= 175°C<br>IC nom<br>IC<br>225<br>340<br>A<br>A<br>PeriodischerKollektor-Spitzenstrom<br>Repetitivepeakcollectorcurrent<br>tP= 1 ms<br>ICRM<br>450<br>A<br>Gesamt-Verlustleistung<br>Totalpowerdissipation<br>TC= 25°C, Tvj max= 175°C<br>Ptot<br>1500<br>W<br>Gate-Emitter-Spitzenspannung<br>Gate-emitterpeakvoltage<br>VGES<br>+/-20<br>V<br>**CharakteristischeWerte/CharacteristicValues**<br>min.<br>typ.<br>max.<br>Kollektor-Emitter-Sättigungsspannung<br>Collector-emittersaturationvoltage<br>IC= 225 A, VGE= 15 V<br>IC= 225 A, VGE= 15 V<br>IC= 225 A, VGE= 15 V<br>VCE sat<br>1,95<br>2,35<br>2,45<br>2,30<br>V<br>V<br>V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Gate-Schwellenspannung<br>Gatethresholdvoltage<br>IC= 9,00 mA, VCE= VGE, Tvj= 25°C<br>VGEth<br>5,2<br>5,8<br>6,4<br>V<br>Gateladung<br>Gatecharge<br>VGE= -15 V ... +15 V<br>QG<br>2,35<br>µC<br>InternerGatewiderstand<br>Internalgateresistor<br>Tvj= 25°C<br>RGint<br>2,8<br>Ω<br>Eingangskapazität<br>Inputcapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cies<br>18,5<br>nF<br>Rückwirkungskapazität<br>Reversetransfercapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cres<br>0,60<br>nF<br>Kollektor-Emitter-Reststrom<br>Collector-emittercut-offcurrent<br>VCE= 1700 V, VGE= 0 V, Tvj= 25°C<br>ICES<br>3,0<br>mA<br>Gate-Emitter-Reststrom<br>Gate-emitterleakagecurrent<br>VCE= 0 V, VGE= 20 V, Tvj= 25°C<br>IGES<br>400<br>nA<br>Einschaltverzögerungszeit,induktiveLast<br>Turn-ondelaytime,inductiveload<br>IC= 225 A, VCE= 900 V<br>VGE= ±15 V<br>RGon= 3,3Ω<br>td on<br>0,22<br>0,25<br>0,26<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Anstiegszeit,induktiveLast<br>Risetime,inductiveload<br>IC= 225 A, VCE= 900 V<br>VGE= ±15 V<br>RGon= 3,3Ω<br>tr<br>0,08<br>0,085<br>0,09<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Abschaltverzögerungszeit,induktiveLast<br>Turn-offdelaytime,inductiveload<br>IC= 225 A, VCE= 900 V<br>VGE= ±15 V<br>RGoff= 6,2Ω<br>td off<br>0,69<br>0,84<br>0,88<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Fallzeit,induktiveLast<br>Falltime,inductiveload<br>IC= 225 A, VCE= 900 V<br>VGE= ±15 V<br>RGoff= 6,2Ω<br>tf<br>0,28<br>0,54<br>0,62<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>EinschaltverlustenergieproPuls<br>Turn-onenergylossperpulse<br>IC= 225 A, VCE= 900 V, LS= 35 nH<br>VGE= ±15 V, di/dt = 3100 A/µs (Tvj= 150°C)<br>RGon= 3,3Ω<br>Eon<br>51,0<br>67,5<br>72,0<br>mJ<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>AbschaltverlustenergieproPuls<br>Turn-offenergylossperpulse<br>IC= 225 A, VCE= 900 V, LS= 35 nH<br>VGE= ±15 V, du/dt = 3000 V/µs (Tvj= 150°C)<br>RGoff= 6,2Ω<br>Eoff<br>45,5<br>73,5<br>83,5<br>mJ<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Kurzschlußverhalten<br>SCdata<br>VGE ≤15 V, VCC= 1000 V<br>VCEmax= VCES-LsCE·di/dt<br>ISC<br>1100<br>A<br>Tvj= 150°C<br>tP ≤10 µs,<br>Wärmewiderstand,ChipbisGehäuse<br>Thermalresistance,junctiontocase<br>proIGBT/perIGBT<br>RthJC<br>0,099 K/W<br>Wärmewiderstand,GehäusebisKühlkörper<br>Thermalresistance,casetoheatsink<br>proIGBT/perIGBT<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)<br>RthCH<br>0,029<br>K/W<br>TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions<br>Tvj op<br>-40<br>150<br>°C||
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> IGBT-ModulIGBT-Module FF225R17ME4
## Technische�Information�/�Technical�Information
**==> picture [86 x 38] intentionally omitted <==**
**Vorläufige�Daten Preliminary�Data**
## **Diode,�Wechselrichter�/�Diode,�Inverter Höchstzulässige�Werte�/�Maximum�Rated�Values**
|PeriodischeSpitzensperrspannung<br>Repetitivepeakreversevoltage|Tvj= 25°C|VRRM|1700|V|
|---|---|---|---|---|
|Dauergleichstrom<br>ContinuousDCforwardcurrent||IF|225|A|
|PeriodischerSpitzenstrom<br>Repetitivepeakforwardcurrent|tP= 1 ms|IFRM|450|A|
|Grenzlastintegral<br>I²t-value|VR= 0 V, tP= 10 ms, Tvj= 125°C|I²t|8300<br>|A²s|
## **Charakteristische�Werte�/�Characteristic�Values**
||||||||
|---|---|---|---|---|---|---|
|**CharakteristischeWerte/CharacteristicValues**|||min.|typ.|max.||
|Durchlassspannung<br>Forwardvoltage|IF= 225 A, VGE= 0 V<br>IF= 225 A, VGE= 0 V<br>IF= 225 A, VGE= 0 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|VF||1,80<br>1,90<br>1,95|2,20|V<br>V<br>V|
|Rückstromspitze<br>Peakreverserecoverycurrent|IF= 225 A, - diF/dt = 3100 A/µs (Tvj=150°C)<br>VR= 900 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|IRM||320<br>375<br>385||A<br>A<br>A|
|Sperrverzögerungsladung<br>Recoveredcharge|IF= 225 A, - diF/dt = 3100 A/µs (Tvj=150°C)<br>VR= 900 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Qr||57,0<br>97,0<br>110||µC<br>µC<br>µC|
|AbschaltenergieproPuls<br>Reverserecoveryenergy|IF= 225 A, - diF/dt = 3100 A/µs (Tvj=150°C)<br>VR= 900 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Erec||32,5<br>60,5<br>69,0||mJ<br>mJ<br>mJ|
|Wärmewiderstand,ChipbisGehäuse<br>Thermalresistance,junctiontocase|proDiode/perdiode|RthJC|||0,16|K/W|
|Wärmewiderstand,GehäusebisKühlkörper<br>Thermalresistance,casetoheatsink|proDiode/perdiode<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)|RthCH||0,047||K/W|
|TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions||Tvj op|-40||150|°C|
## **NTC-Widerstand�/�NTC-Thermistor**
## **Charakteristische�Werte�/�Characteristic�Values**
|**NTC-Widerstand/NTC-Thermistor**<br>|**NTC-Widerstand/NTC-Thermistor**<br>||||||
|---|---|---|---|---|---|---|
|**CharakteristischeWerte/CharacteristicValues**|||min.|typ.|max.||
|Nennwiderstand<br>Ratedresistance|TC= 25°C|R25||5,00||kΩ|
|AbweichungvonR100<br>DeviationofR100|TC= 100°C, R100= 493Ω|∆R/R|-5||5|%|
|Verlustleistung<br>Powerdissipation|TC= 25°C|P25|||20,0|mW|
|B-Wert<br>B-value|R2= R25exp [B25/50(1/T2- 1/(298,15 K))]|B25/50||3375||K|
|B-Wert<br>B-value|R2= R25exp [B25/80(1/T2- 1/(298,15 K))]|B25/80||3411||K|
|B-Wert<br>B-value|R2= R25exp [B25/100(1/T2- 1/(298,15 K))]|B25/100||3433||K|
Angaben�gemäß�gültiger�Application�Note. Specification�according�to�the�valid�application�note.
prepared�by:�CU date�of�publication:�2014-06-06 approved�by:�MK revision:�2.4
3
## Technische�Information�/�Technical�Information
> IGBT-ModulIGBT-Module FF225R17ME4
**==> picture [86 x 38] intentionally omitted <==**
## **Vorläufige�Daten Preliminary�Data**
## **Modul�/�Module**
|**Modul/Module**|||||||
|---|---|---|---|---|---|---|
|Isolations-Prüfspannung<br>Isolationtestvoltage|RMS, f = 50 Hz, t = 1 min.|VISOL|3,4|||kV|
|MaterialModulgrundplatte<br>Materialofmodulebaseplate|||Cu||||
|InnereIsolation<br>Internalisolation|Basisisolierung(Schutzklasse1,EN61140)<br>basicinsulation(class1,IEC61140)||Al2O3||||
|Kriechstrecke<br>Creepagedistance|Kontakt-Kühlkörper/terminaltoheatsink<br>Kontakt-Kontakt/terminaltoterminal||14,5<br>13,0|||mm|
|Luftstrecke<br>Clearance|Kontakt-Kühlkörper/terminaltoheatsink<br>Kontakt-Kontakt/terminaltoterminal||12,5<br>10,0|||mm|
|VergleichszahlderKriechwegbildung<br>Comperativetrackingindex||CTI||> 200|||
||||min.|typ.|max.||
|Wärmewiderstand,GehäusebisKühlkörper<br>Thermalresistance,casetoheatsink|proModul/permodule<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)|RthCH||0,009||K/W|
|Modulstreuinduktivität<br>Strayinductancemodule||LsCE||20||nH|
|Modulleitungswiderstand,Anschlüsse-<br>Chip<br>Moduleleadresistance,terminals-chip|TC=25°C,proSchalter/perswitch|RCC'+EE'||1,10||mΩ|
|Lagertemperatur<br>Storagetemperature||Tstg|-40||125|°C|
|Anzugsdrehmomentf.Modulmontage<br>Mountingtorqueformodulmounting|SchraubeM5-Montagegem.gültigerApplikationsschrift<br>ScrewM5-Mountingaccordingtovalidapplicationnote|M|3,00|-|6,00|Nm|
|Anzugsdrehmomentf.elektr.Anschlüsse<br>Terminalconnectiontorque|SchraubeM6-Montagegem.gültigerApplikationsschrift<br>ScrewM6-Mountingaccordingtovalidapplicationnote|M|3,0|-|6,0|Nm|
|Gewicht<br>Weight||G||345||g|
prepared�by:�CU date�of�publication:�2014-06-06 approved�by:�MK revision:�2.4
4
IGBT-Modul IGBT-Module
## FF225R17ME4
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**----- Start of picture text -----**<br>
IC =f(V CE) IC =f(V CE)<br>VGE =15V Tvj = 150°C<br>450 450<br>Tvj = 25°C VGE = 20 V<br>400 Tvj = 125°C 400 VGE = 15 V<br>Tvj = 150°C VGE = 12 V<br>VGE = 10 V<br>350 350 VGE = 9 V<br>VGE = 8 V<br>Ee LVL e Tete<br>300 300<br>250 250<br>200 / 1 a 200 mz Y =<br>af / a a<br>150 150<br>A en eee ee<br>100 100<br>Fl aw 7.<br>50 50 Le |<br>“ ye<br>PAR ase<br>0 0<br>0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0<br>VCE [V] VCE [V]<br>Ubertragungscharakteristik IGBT,Wechselrichter (typisch) Schaltverluste IGBT,Wechselrichter (typisch)<br>transfer characteristic IGBT,Inverter (typical) switching losses IGBT, Inverter (typical)<br>IC =f(V GE) Eon =f(l),E C off =f(I C)<br>VCE =20V VGE =+15V,R Gon =33 Ω ,R Goff =62 Ω ,V CE =900V<br>450 200<br>Tvj = 25°C Eon, Tvj = 125°C<br>400 Tvj = 125°C Eon, Tvj = 150°C<br>Tvj = 150°C 175 Eoff, Tvj = 125°C<br>Eoff, Tvj = 150°C<br>350<br>150<br>300<br>125<br>p e PEEL yee<br>250<br>100<br>Mi BREEDce<br>200<br>75<br>150<br>100 50 7<br>25<br>50<br>0 0<br>5 6 7 8 9 10 11 12 13 0 50 100 150 200 250 300 350 400 450<br>VGE [V] IC [A]<br> [A] [A]<br>IC IC<br> [A]<br>IC E [mJ]<br>**----- End of picture text -----**<br>
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## IGBT-Modul IGBT-Module Technische Information FF225R17ME4 / Technical Information
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**----- Start of picture text -----**<br>
Eon =f{(R),E G off =f(R G) ZthJC = f (t)<br>VGE =+15V,1 C =225A,V CE =900V<br>300 1<br>Eon, Tvj = 125°C | HH— ZthJC : IGBT EeeE HH} tHee<br>Eon, Tvj = 150°C<br>Eoff, Tvj = 125°C<br>250 E Eoff, Tvj = 150°C |Py yf Se PT oo TTo T TTT<br>— r anun onion no<br>200 0,1<br>e e<br>,J a PEE E t<br>, | fT TTTr i<br>PT TTT ATTT<br>150<br>, Pf HH fpf<br>100 Py) } tL 0,01 TS ELT RRL A<br>L —_——_ eon PY Thy TTT<br>y _——_ eee 2ee|<br>ff — cesses Zoo ee<br>yo ---- 7 [ Tt tT Titi tT Tit<br>50 F e psspepee PT|| TT eeee<br>i: 1 2 3 4<br>ri[K/W]: 0,0033 0,015217 0,070217 0,01045<br>τ i[s]: 0,0008 0,013 0,05 0,6<br>0 0,001<br>0 10 20 30 40 50 60 70 0,001 0,01 0,1 1 10<br>RG [ Ω ] t [s]<br>Sicherer Ruckwarts-Arbeitsbereich IGBT,Wechselrichter Durchlasskennlinie der Diode, Wechselrichter (typisch)<br>(RBSOA) forward characteristic of Diode, Inverter (typical)<br>reverse bias safe operating area IGBT, Inverter (RBSOA) IF =f(V F)<br>IC =f(V CE)<br>VGE =415V,R Goff =62 Ω ,T vj =150°C<br>500 450<br>IC, Modul Tvj = 25°C<br>450 IC, Chip 400 Tvj = 125°C<br>a| tt ttt E Tvj = 150°C | | fe<br>400<br>350<br>350<br>300<br>300<br>Pp tT ;<br>250<br>250<br>200<br>200<br>150<br>150<br>100<br>100<br>50 50<br>0 0<br>0 200 400 600 800 1000 1200 1400 1600 1800 0,0 0,5 1,0 1,5 2,0 2,5 3,0<br>VCE [V] VF [V]<br> [K/W]<br>E [mJ]<br>thJC<br>Z<br> [A] [A]<br>IC IF<br>**----- End of picture text -----**<br>
6
IGBT-Modul IGBT-Module
## FF225R17ME4
**==> picture [487 x 596] intentionally omitted <==**
**----- Start of picture text -----**<br>
Erec =f(I F) Erec =f(R G)<br>RGon 2, Ω ,V CE =900V IF = 208A, V CE = 900 V<br>100 80<br>Erec, Tvj = 125°C Erec, Tvj = 125°C<br>Erec, Tvj = 150°C Erec, Tvj = 150°C<br>90<br>Ei ttl | 70 olEe<br>80<br>60<br>70<br>60 50<br>tt ree Nine<br>50<br>TOA Seo<br>40<br>TAY ~<br>40<br>; tty<br>30<br>30 AAT | re<br>| TT<br>ALTO LE<br>20 20<br>0 50 100 150 200 250 300 350 400 450 0 5 10 15 20 25 30 35<br>IF [A] RG [ Ω ]<br>Transienter Warmewiderstand Diode, Wechselrichter NTC-Widerstand-Temperaturkennlinie (typisch)<br>transient thermal impedance Diode, Inverter NTC-Thermistor-temperature characteristic (typical)<br>ZthJC =f (t) R=f(T)<br>1 100000<br>ZthJC : Diode Rtyp<br>{— et [I ———<br>eee ee ee l ee Se ee<br>rT TT T T TT se<br>a ll a eeee<br>PTE TTI TE ET) PF | ET<br>0,1 SsemaYT seeTT east ETTTeeTT 10000 KLNTesES NN se ee<br>rT Ta TT Ne ee ee<br>2 pot NE<br>RO ULIMERATIIMNRRLLTOM Ati 2 ee eee<br>0,01 ANIM 1000<br>PtVN TAT VM Lfee [TN]<br>ee a<br>PTrT TTT ETT NSee<br>Pt TT| EE i: TT 1 2 3 TT 4 potseNT<br>ri[K/W]: 0,01008 0,03808 0,10064 0,0112<br>PT τ i[s]: 0,0008 0,013 T 0,05 f 0,6 Pot EN<br>0,001 LMsms } «SC 100 ft | ET TT<br>0,001 0,01 0,1 1 10 0 20 40 60 80 100 120 140 160<br>t [s] TC [°C]<br>E [mJ] E [mJ]<br>] Ω<br> [K/W]<br>R[<br>thJC<br>Z<br>**----- End of picture text -----**<br>
7
## Technische�Information�/�Technical�Information
> IGBT-ModulIGBT-Module FF225R17ME4
## **Schaltplan�/�circuit_diagram_headline**
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**Vorläufige�Daten Preliminary�Data**
**==> picture [140 x 138] intentionally omitted <==**
## **Gehäuseabmessungen�/�package�outlines**
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**----- Start of picture text -----**<br>
Infineon<br>**----- End of picture text -----**<br>
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prepared�by:�CU date�of�publication:�2014-06-06 approved�by:�MK revision:�2.4
8
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IGBT-Modul<br>IGBT-Module<br>**----- End of picture text -----**<br>
## FF225R17ME4
## **Nutzungsbedingungen**
## application.
9
Updated at April 28, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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