Image not available
Illustrative purposes only
FF200R33KF2CNOSA1
IGBT Module, Dual, 330 A, 3.4 V, 2.2 kW, 125 °C, Module
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: INFINEON
- Product type: IGBT Modules
- IGBT Technology: IGBT 2
- IGBT Termination: Tab
- Power Dissipation: 2.2kW
- IGBT Configuration: Dual
- Transistor Mounting: Panel
- Transistor Polarity: N Channel
- DC Collector Current: 330A
- Power Dissipation Pd: 2.2kW
- Transistor Case Style: Module
- Operating Temperature Max: 125°C
- Junction Temperature Tj Max: 125°C
- Continuous Collector Current: 330A
- Collector Emitter Voltage Max: 3.3kV
- Collector Emitter Voltage V(br)ceo: 3.3kV
- Collector Emitter Saturation Voltage: 3.4V
- Collector Emitter Saturation Voltage Vce(on): 3.4V
| Delivery and price | |
|---|---|
| Units per pack | 1 |
| Price | 499.81 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
## Technische�Information�/�Technical�Information > IGBT-ModuleIGBT-modules FF200R33KF2C **==> picture [86 x 38] intentionally omitted <==** ## **Vorläufige�Daten Preliminary�Data** |TechnischeInformation/TechnicalInformation<br>FF200R33KF2C<br>IGBT-Module<br>IGBT-modules|| |---|---| |preparedby:JB<br>approvedby:CL<br>dateofpublication:2013-10-03<br>revision:2.0<br>**VorläufigeDaten**<br>**PreliminaryData**<br>**IGBT,Wechselrichter/IGBT,Inverter**<br>**HöchstzulässigeWerte/MaximumRatedValues**<br>Kollektor-Emitter-Sperrspannung<br>Collector-emittervoltage<br>Tvj= 25°C<br>Tvj= -25°C<br>VCES<br>3300<br>3300<br>V<br>Kollektor-Dauergleichstrom<br>ContinuousDCcollectorcurrent<br>TC= 80°C, Tvj max= 150°C<br>TC= 25°C, Tvj max= 150°C<br>IC nom<br>IC<br>200<br>330<br>A<br>A<br>PeriodischerKollektor-Spitzenstrom<br>Repetitivepeakcollectorcurrent<br>tP= 1 ms<br>ICRM<br>400<br>A<br>Gesamt-Verlustleistung<br>Totalpowerdissipation<br>TC= 25°C, Tvj max= 150<br>Ptot<br>2,20<br>kW<br>Gate-Emitter-Spitzenspannung<br>Gate-emitterpeakvoltage<br>VGES<br>+/-20<br>V<br>**CharakteristischeWerte/CharacteristicValues**<br>min.<br>typ.<br>max.<br>Kollektor-Emitter-Sättigungsspannung<br>Collector-emittersaturationvoltage<br>IC= 200 A, VGE= 15 V<br>IC= 200 A, VGE= 15 V<br>VCE sat<br>3,40<br>4,30<br>4,25<br>5,00<br>V<br>V<br>Tvj= 25°C<br>Tvj= 125°C<br>Gate-Schwellenspannung<br>Gatethresholdvoltage<br>IC= 20,0 mA, VCE= VGE, Tvj= 25°C<br>VGEth<br>4,2<br>5,1<br>6,0<br>V<br>Gateladung<br>Gatecharge<br>VGE= -15 V ... +15 V, VCE= 1800V<br>QG<br>4,00<br>µC<br>InternerGatewiderstand<br>Internalgateresistor<br>Tvj= 25°C<br>RGint<br>2,5<br>Ω<br>Eingangskapazität<br>Inputcapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cies<br>25,0<br>nF<br>Rückwirkungskapazität<br>Reversetransfercapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cres<br>1,40<br>nF<br>Kollektor-Emitter-Reststrom<br>Collector-emittercut-offcurrent<br>VCE= 3300 V, VGE= 0 V, Tvj= 25°C<br>ICES<br>5,0<br>mA<br>Gate-Emitter-Reststrom<br>Gate-emitterleakagecurrent<br>VCE= 0 V, VGE= 20 V, Tvj= 25°C<br>IGES<br>400<br>nA<br>Einschaltverzögerungszeit,induktiveLast<br>Turn-ondelaytime,inductiveload<br>IC= 200 A, VCE= 1800 V<br>VGE= ±15 V<br>RGon= 5,6Ω, CGE= 33,0 nF<br>td on<br>0,28<br>0,28<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Anstiegszeit,induktiveLast<br>Risetime,inductiveload<br>IC= 200 A, VCE= 1800 V<br>VGE= ±15 V<br>RGon= 5,6Ω, CGE= 33,0 nF<br>tr<br>0,18<br>0,20<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Abschaltverzögerungszeit,induktiveLast<br>Turn-offdelaytime,inductiveload<br>IC= 200 A, VCE= 1800 V<br>VGE= ±15 V<br>RGoff= 7,5Ω, CGE= 33,0 nF<br>td off<br>1,55<br>1,70<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Fallzeit,induktiveLast<br>Falltime,inductiveload<br>IC= 200 A, VCE= 1800 V<br>VGE= ±15 V<br>RGoff= 7,5Ω, CGE= 33,0 nF<br>tf<br>0,20<br>0,20<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>EinschaltverlustenergieproPuls<br>Turn-onenergylossperpulse<br>IC= 200 A, VCE= 1800 V, LS= 70 nH<br>VGE= ±15 V<br>RGon= 5,6Ω, CGE= 33,0 nF<br>Eon<br>235<br>365<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>AbschaltverlustenergieproPuls<br>Turn-offenergylossperpulse<br>IC= 200 A, VCE= 1800 V, LS= 70 nH<br>VGE= ±15 V<br>RGoff= 7,5Ω, CGE= 33,0 nF<br>Eoff<br>215<br>255<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Kurzschlußverhalten<br>SCdata<br>VGE ≤15 V, VCC= 2500 V<br>VCEmax= VCES-LsCE·di/dt<br>ISC<br>1000<br>A<br>Tvj= 125°C<br>tP ≤10 µs,<br>Wärmewiderstand,ChipbisGehäuse<br>Thermalresistance,junctiontocase<br>proIGBT/perIGBT<br>RthJC<br>57,0 K/kW<br>Wärmewiderstand,GehäusebisKühlkörper<br>Thermalresistance,casetoheatsink<br>proIGBT/perIGBT<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)<br>RthCH<br>49,0<br>K/kW<br>TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions<br>Tvj op<br>-40<br>125<br>°C|| 1 ## Technische�Information�/�Technical�Information > IGBT-ModuleIGBT-modules FF200R33KF2C **==> picture [86 x 38] intentionally omitted <==** ## **Vorläufige�Daten Preliminary�Data** ## **Diode,�Wechselrichter�/�Diode,�Inverter Höchstzulässige�Werte�/�Maximum�Rated�Values** |PeriodischeSpitzensperrspannung<br>Repetitivepeakreversevoltage|Tvj= 25°C<br>Tvj= -25°C|VRRM|3300<br>3300|3300<br>3300||V| |---|---|---|---|---|---|---| |Dauergleichstrom<br>ContinuousDCforwardcurrent||IF|200|||A| |PeriodischerSpitzenstrom<br>Repetitivepeakforwardcurrent|tP= 1 ms|IFRM|400|||A| |Grenzlastintegral<br>I²t-value|VR= 0 V, tP= 10 ms, Tvj= 125°C|I²t|14,0|||kA²s| |Spitzenverlustleistung<br>Maximumpowerdissipation|Tvj= 125°C|PRQM|400|||kW| |Mindesteinschaltdauer<br>Minimumturn-ontime||ton min|10,0|||µs| |**CharakteristischeWerte/CharacteristicValues**|||min.|typ.|max.|| |Durchlassspannung<br>Forwardvoltage|IF= 200 A, VGE= 0 V<br>IF= 200 A, VGE= 0 V<br>Tvj= 25°C<br>Tvj= 125°C|VF||2,80<br>2,80|3,50<br>3,50|V<br>V| |Rückstromspitze<br>Peakreverserecoverycurrent|IF= 200 A, - diF/dt = 1100 A/µs (Tvj=125°C)<br>VR= 1800 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C|IRM||275<br>325||A<br>A| |Sperrverzögerungsladung<br>Recoveredcharge|IF= 200 A, - diF/dt = 1100 A/µs (Tvj=125°C)<br>VR= 1800 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C|Qr||120<br>220||µC<br>µC| |AbschaltenergieproPuls<br>Reverserecoveryenergy|IF= 200 A, - diF/dt = 1100 A/µs (Tvj=125°C)<br>VR= 1800 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C|Erec||125<br>255||mJ<br>mJ| |Wärmewiderstand,ChipbisGehäuse<br>Thermalresistance,junctiontocase|proDiode/perdiode|RthJC|||110|K/kW| |Wärmewiderstand,GehäusebisKühlkörper<br>Thermalresistance,casetoheatsink|proDiode/perdiode<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)|RthCH||93,0||K/kW| |TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions||Tvj op|-40||125|°C| date�of�publication:�2013-10-03 revision:�2.0 prepared�by:�JB approved�by:�CL 2 IGBT-Module IGBT-modules ## FF200R33KF2C |Modul / Module|||||||| |---|---|---|---|---|---|---|---| |Isolations-Prüfspannung<br>Teilentladungs-Aussetzspannung<br>Kollektor-Emitter-Gleichsperrspannung<br>~~Isolation test voltage~~<br>~~Partial discharge extinction voltage ~~<br>~~DC stability~~|RMS, f = 50 Hz, t = 1 min.<br>RMS, f = 50 Hz, QPD ≤10 pC (acc. to IEC 1287)<br>Tvj= 25°C, 100 fit<br>~~es ~~<br> ~~es ~~<br>~~iY~~||VISOL<br>VISOL<br>VCE D<br> ~~ee~~<br> ~~ee~~||6,0<br>2,6<br>1800<br>~~ee~~<br>~~ee~~||kV<br>kV<br>V| |Material Modulgrundplatte<br>Material of module baseplate|||||AlSiC||| |Innere Isolation<br>Internal isolation|Basisisolierung (Schutzklasse 1, EN61140)<br>basic insulation (class 1, IEC 61140)||||AlN||| |Kriechstrecke<br>Creepage distance|Kontakt - Kuhlk6rper / terminal to heatsink<br>Kontakt - Kontakt / terminal to terminal||||32,2<br>32,2||mm| |Luftstrecke<br>Clearance|Kontakt - Kuhlk6rper / terminal to heatsink<br>Kontakt - Kontakt / terminal to terminal||||19,1<br>19,1||mm| |Vergleichszahl der Kriechwegbildung<br>Comperative tracking index|||CTI||> 400||| |||||min.|typ.|max.|| |Warmewiderstand, Gehause bis Kuhlkérper| <br>Thermal resistance, case to heatsink|Paste<br>grease<br> pro Modul / per module<br>= 1 W/(m-k)/<br>= 1 W/(m-k)||RthCH||16,0||K/kW| |Modulstreuinduktivität<br>~~Stray inductance module~~<br>Modulleitungswiderstand, Anschlusse -|~~ee ~~||LsCE<br> ~~ee ee~~|58<br>~~ee~~|||nH| |Chip|TC<br>= 25°C, pro Schalter / per switch||RCC'+EE'||0,78||mΩ| |Module lead resistance, terminals - chip|||||||| |Lagertemperatur<br>~~Storage temperature~~<br>Anzugsdrehmoment f. Modulmontage<br>Mounting torque for modul mounting|~~ee ~~<br>Schraube M6<br>- Montage gem. giltiger Applikationsschrift<br>Screw M6<br>- Mounting according to valid application note||Tstg<br>M<br> ~~ee ee~~|-40<br>125<br>4,25<br>-<br>5,75<br>~~ee~~|||°C<br>Nm| |Anzugsdrehmoment f. elektr. Anschlusse<br>Terminal connection torque||Schraube M5<br>- Montage gem. gultiger Applikationsschrift<br>Screw M5<br>- Mounting according to valid application note||M|3,6|-|4,2|Nm| |Gewicht<br>Weight|||G||500||g| 3 ## IGBT-Module IGBT-modules Technische Information FF200R33KF2C / Technical Information **==> picture [486 x 279] intentionally omitted <==** **----- Start of picture text -----**<br> IC =f(V CE) IC =f(V CE)<br>VGE =15V Tvj = 125°C<br>400 400<br>Tvj = 25°C VGE = 20V<br>Tvj = 125°C VGE = 15V<br>350 350 VGE = 12V<br>VGE = 10V<br>VGE = 9V<br>300 300 VGE = 8V<br>250 PLELLLEAERL 250<br>oe EE) EEPe<br>A tt /<br>200 200 PE ee<br>150 150<br>100 y ‘ 100 /| + > —<br>CUA eLig A+ e<br>50 50<br>- wa<br>0 0<br>0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0 5,5 6,0 6,5 7,0 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0 5,5 6,0 6,5 7,0<br>VCE [V] VCE [V]<br> [A] [A]<br>IC IC<br>**----- End of picture text -----**<br> **==> picture [487 x 280] intentionally omitted <==** **----- Start of picture text -----**<br> IC =f(V GE) Eon =f(l),E C off =f(I C)<br>VCE =20V VGE =+15V,R Gon =56 Ω ,R Goff =7.5 Ω ,V CE =1800V,C GE =33nF<br>400 1200<br>Tvj = 25°C Eon, Tvj = 125°C<br>Tvj = 125°C Eoff, Tvj = 125°C<br>350<br>1000<br>300<br>800<br>250<br>200 600<br>150<br>400<br>100<br>PPE Lyi ieee | |<br>200<br>50<br>0 0<br>5 6 7 8 9 10 11 12 13 0 50 100 150 200 250 300 350 400<br>VGE [V] IC [A]<br> [A]<br>IC E [mJ]<br>**----- End of picture text -----**<br> 4 ## IGBT-Module IGBT-modules Technische Information FF200R33KF2C / Technical Information **==> picture [485 x 279] intentionally omitted <==** **----- Start of picture text -----**<br> Eon =f(R),E G off =f(R G) ZthJC =f (t)<br>VGE =415V,1 C =200A,V CE =1800V,C GE =33nF<br>1800 _—_ 1000 U===_—— 0... S00; oes sana<br>Eon, Tvj = 125°C 1 ZthJC : IGBT a<br>16001400 Ee PT Eoff, Tvj = 125°C Ty |... | | dg|y rorHH—PT A TT eTEE eeTHH} tH<br>1200 100<br>ee<br>1000800 PoffPt PfLeer4}ft || a Pe a =et tt FP |<br>600 10<br>a<br>a<br>400 PA/ | ff ff P T ATT teee<br>i: 1 2 3 4<br>200 ri[K/kW]: 25,65 14,25 3,42 13,68<br>ptete py rTA TAT T TT τ i[s]: 0,03 a 0,1 0,3 1 I<br>0 1<br>0 10 20 30 40 50 60 70 0,001 0,01 0,1 1 10<br>RG [ Ω ] t [s]<br> [K/kW]<br>E [mJ]<br>thJC<br>Z<br>**----- End of picture text -----**<br> ## **(RBSOA)** **==> picture [34 x 9] intentionally omitted <==** **----- Start of picture text -----**<br> IF =f(V F)<br>**----- End of picture text -----**<br> **==> picture [486 x 271] intentionally omitted <==** **----- Start of picture text -----**<br> IC =f(V CE)<br>VGE =415V,R Goff =7.5 Ω ,T vj =125°C,C GE =33nF<br>450 400<br>IC, Modul Tvj = 25°C<br>400 IC, Chip Tvj = 125°C<br>a 350 |e<br>350<br>300<br>300<br>250<br>250<br>200<br>200<br>150<br>150<br>100<br>100<br>50<br>50<br>0 0<br>0 500 1000 1500 2000 2500 3000 3500 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0<br>VCE [V] VF [V]<br> [A] [A]<br>IC IF<br>**----- End of picture text -----**<br> 5 ## IGBT-Module IGBT-modules ## FF200R33KF2C **==> picture [485 x 279] intentionally omitted <==** **----- Start of picture text -----**<br> Erec =f (I F) Erec =f(R G)<br>RGon =5.6 Ω ,V CE =1800V IF =200A,V CE =1800V<br>400 ss 400 as<br>Erec, Tvj = 125°C Erec, Tvj = 125°C<br>350 350<br>300 300<br>250 an 250<br>ptt tebe Pt |<br>200 200<br>CA | Pe<br>150 Lf 150 Se<br>ALITTLE<br>100 100<br>TP ELL TEL Te<br>50 50<br>0 0<br>0 50 100 150 200 250 300 350 400 0 10 20 30 40 50 60 70<br>IF [A] RG [ Ω ]<br>E [mJ] E [mJ]<br>**----- End of picture text -----**<br> **==> picture [489 x 280] intentionally omitted <==** **----- Start of picture text -----**<br> ZthJC = f (t) IR =f(V R)<br>Tvj = 125°C<br>1000 500<br>et ———<br>ZthJC : Diode IR, Modul<br>Ra H— rT TT FeT Teee eee TT 450 eee a<br>400<br>E AnETn A<br>350<br>100 Oe<br>eetree eee et 300 Pf NE fp<br>|rTa| TTTTT TEATri TT 250 Pf P| \Nf\ fp<br>200<br>HIPHOP wee<br>ee<br>10<br>ee a 150 a<br>PT ATeee<br>oa ene 100 Pf fff<br>i: 1 2 3 4<br>At tes r τ ii[K/kW]: [s]: 48,6 0,03 27 0,1 6,48 0,3 t 25,92 1 50 EE<br>1 0<br>0,001 0,01 0,1 1 10 0 500 1000 1500 2000 2500 3000 3500<br>t [s] VR [V]<br> [K/kW]thJC [A]IR<br>Z<br>**----- End of picture text -----**<br> 6 ## Technische�Information�/�Technical�Information > IGBT-ModuleIGBT-modules FF200R33KF2C **==> picture [86 x 38] intentionally omitted <==** ## **Schaltplan�/�circuit_diagram_headline** ## **Vorläufige�Daten Preliminary�Data** **==> picture [144 x 138] intentionally omitted <==** ## **Gehäuseabmessungen�/�package�outlines** **==> picture [452 x 452] intentionally omitted <==** prepared�by:�JB date�of�publication:�2013-10-03 approved�by:�CL revision:�2.0 7 **==> picture [66 x 19] intentionally omitted <==** **----- Start of picture text -----**<br> IGBT-Module<br>IGBT-modules<br>**----- End of picture text -----**<br> ## FF200R33KF2C ## **Nutzungsbedingungen** application. 8
Updated at February 9, 2023
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
About Novapart
Novapart is a B2B electronic component broker specialising in stock shortages and cost reduction. We source hard-to-find parts and identify compliant alternatives across a catalogue of 410,000+ components from 500+ manufacturers.
Learn more →Stock Shortage Specialist
When a component is unavailable, discontinued or has an unacceptable lead time, we tap into our network of vetted European and Asian distributors to source what you need — without compromising on quality or traceability.
Request a quote →Compliant Alternatives
We identify pin-to-pin, electrically equivalent substitutes that meet the same certifications (RoHS, AEC-Q100, REACH) as your original specification — validated against datasheets, not just part numbers. Often at a lower cost.
BOM Analysis service →