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FF200R12KE4HOSA1
IGBT Module, Dual [Half Bridge], 240 A, 1.75 V, 1.1 kW, 150 °C, Module
⚠️ Given the current worldwide supply chain situation, we kindly ask you to take the information shown as a guideline.
- Manufacturer: INFINEON
- Product type:
- Transistor Polarity:Dual NPN; DC Collector Current:240A; Collector Emitter Saturation Voltage Vce(on):1.75V; Power Dissipation Pd:1.1kW; Collector Emitter Voltage V(br)ceo:1.2kV; Trans
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 7Pins
- Product Range: -
- IGBT Technology: IGBT 4 [Trench/Field Stop]
- IGBT Termination: Press Fit
- Power Dissipation: 1.1kW
- IGBT Configuration: Dual [Half Bridge]
- Transistor Mounting: Panel
- Transistor Polarity: Dual NPN
- DC Collector Current: 240A
- Power Dissipation Pd: 1.1kW
- Transistor Case Style: Module
- Operating Temperature Max: 150°C
- Junction Temperature Tj Max: 150°C
- Continuous Collector Current: 240A
- Collector Emitter Voltage Max: 1.2kV
- Collector Emitter Voltage V(br)ceo: 1.2kV
- Collector Emitter Saturation Voltage: 1.75V
- Collector Emitter Saturation Voltage Vce(on): 1.75V
| Delivery and price | |
|---|---|
| Units per pack | 50 |
| Price | 58.91 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
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Updated at March 30, 2026