FF200R12KE3HOSA1

IGBT Module, Dual, 295 A, 1.7 V, 1.05 kW, 125 °C, Module

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Manufacturer: INFINEON
Product type: IGBT Modules
Transistor Polarity:N Channel; DC Collector Current:295A; Collector Emitter Saturation Voltage Vce(on):1.7V; Power Dissipation Pd:1.05kW; Collector Emitter Voltage V(br)ceo:1.2kV; Transis
SVHC: No SVHC (25-Jun-2025)
Product Range: -
IGBT Technology: IGBT 3 [Trench/Field Stop]
IGBT Termination: Stud
Power Dissipation: 1.05kW
IGBT Configuration: Dual
Transistor Mounting: Panel
Transistor Polarity: N Channel
DC Collector Current: 295A
Power Dissipation Pd: 1.05kW
Transistor Case Style: Module
Operating Temperature Max: 125°C
Junction Temperature Tj Max: 125°C
Continuous Collector Current: 295A
Collector Emitter Voltage Max: 1.2kV
Collector Emitter Voltage V(br)ceo: 1.2kV
Collector Emitter Saturation Voltage: 1.7V
Collector Emitter Saturation Voltage Vce(on): 1.7V

Delivery and price
Units per pack	10
Price	67.23 €
Current stock	18
Lead time	7 days

Datasheet

Updated at February 27, 2026