![FF1800R17IP5BPSA1 — IGBT Module, Dual [Half Bridge], 1.8 kA, 2.2 V, 175 °C, Module](/media/2/2/8/8ED11453D6E90822.webp)
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FF1800R17IP5BPSA1
IGBT Module, Dual [Half Bridge], 1.8 kA, 2.2 V, 175 °C, Module
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: INFINEON
- Product type: IGBT Modules
- Transistor Polarity:N Channel; DC Collector Current:1.8kA; Collector Emitter Saturation Voltage Vce(on):1.75V; Power Dissipation Pd:-; Collector Emitter Voltage V(br)ceo:1.7kV; Transistor
- SVHC: No SVHC (25-Jun-2025)
- Product Range: PrimePACK 3+B Series
- IGBT Technology: IGBT 5 [Trench/Field Stop]
- IGBT Termination: Tab
- Power Dissipation: -
- IGBT Configuration: Dual [Half Bridge]
- Transistor Mounting: Panel
- Transistor Polarity: N Channel
- DC Collector Current: 1.8kA
- Power Dissipation Pd: -
- Transistor Case Style: Module
- Operating Temperature Max: 175°C
- Junction Temperature Tj Max: 175°C
- Continuous Collector Current: 1.8kA
- Collector Emitter Voltage Max: 1.7kV
- Collector Emitter Voltage V(br)ceo: 1.7kV
- Collector Emitter Saturation Voltage: 2.2V
- Collector Emitter Saturation Voltage Vce(on): 1.75V
| Delivery and price | |
|---|---|
| Units per pack | 1 |
| Price | 857.49 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
## FF1800R17IP5 VCES = 1700V IC nom = 1800A / ICRM = 3600A - Hochleistungsumrichter - • Motorantriebe • Traktionsumrichter • Windgeneratoren - - - - CEsat - T - - - - • - - - - - - - CEsat - T • - - - ## **Digit** Datasheet www.infineon.com 2017-03-31 FF1800R17IP5 **==> picture [86 x 38] intentionally omitted <==** |**IGBT,Wechselrichter/IGBT,Inverter**<br>**HöchstzulässigeWerte/MaximumRatedValues**|**IGBT,Wechselrichter/IGBT,Inverter**<br>**HöchstzulässigeWerte/MaximumRatedValues**|||||| |---|---|---|---|---|---|---| |Kollektor-Emitter-Sperrspannung<br>Collector-emittervoltage|Tvj= 25°C|VCES|1700|||V| |Kollektor-Dauergleichstrom<br>ContinuousDCcollectorcurrent|TC= 85°C, Tvj max= 175°C|IC nom|1800|||A| |PeriodischerKollektor-Spitzenstrom<br>Repetitivepeakcollectorcurrent|tP= 1 ms|ICRM|3600|||A| |Gate-Emitter-Spitzenspannung<br>Gate-emitterpeakvoltage||VGES|+/-20|||V| |**CharakteristischeWerte/CharacteristicValues**|||min.|typ.|max.|| |Kollektor-Emitter-Sättigungsspannung<br>Collector-emittersaturationvoltage|IC= 1800 A, VGE= 15 V<br>IC= 1800 A, VGE= 15 V<br>IC= 1800 A, VGE= 15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 175°C|VCE sat||1,75<br>2,10<br>2,30|2,20<br>2,65<br>2,90|V<br>V<br>V| |Gate-Schwellenspannung<br>Gatethresholdvoltage|IC= 64,0 mA, VCE= VGE, Tvj= 25°C|VGEth|5,35|5,80|6,25|V| |Gateladung<br>Gatecharge|VGE= -15 V ... +15 V|QG||9,00||µC| |InternerGatewiderstand<br>Internalgateresistor|Tvj= 25°C|RGint||0,8||Ω| |Eingangskapazität<br>Inputcapacitance|f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V|Cies||105||nF| |Rückwirkungskapazität<br>Reversetransfercapacitance|f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V|Cres||3,20||nF| |Kollektor-Emitter-Reststrom<br>Collector-emittercut-offcurrent|VCE= 1700 V, VGE= 0 V, Tvj= 25°C|ICES|||5,0|mA| |Gate-Emitter-Reststrom<br>Gate-emitterleakagecurrent|VCE= 0 V, VGE= 20 V, Tvj= 25°C|IGES|||400|nA| |Einschaltverzögerungszeit,induktiveLast<br>Turn-ondelaytime,inductiveload|IC= 1800 A, VCE= 900 V<br>VGE= ±15 V<br>RGon= 0,56Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 175°C|td on||0,31<br>0,33<br>0,34||µs<br>µs<br>µs| |Anstiegszeit,induktiveLast<br>Risetime,inductiveload|IC= 1800 A, VCE= 900 V<br>VGE= ±15 V<br>RGon= 0,56Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 175°C|tr||0,17<br>0,18<br>0,19||µs<br>µs<br>µs| |Abschaltverzögerungszeit,induktiveLast<br>Turn-offdelaytime,inductiveload|IC= 1800 A, VCE= 900 V<br>VGE= ±15 V<br>RGoff= 0,68Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 175°C|td off||0,71<br>0,80<br>0,85||µs<br>µs<br>µs| |Fallzeit,induktiveLast<br>Falltime,inductiveload|IC= 1800 A, VCE= 900 V<br>VGE= ±15 V<br>RGoff= 0,68Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 175°C|tf||0,14<br>0,18<br>0,21||µs<br>µs<br>µs| |EinschaltverlustenergieproPuls<br>Turn-onenergylossperpulse|IC= 1800 A, VCE= 900 V, LS= 30 nH<br>VGE= ±15 V, di/dt = 9100 A/µs (Tvj= 175°C)<br>RGon= 0,56Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 175°C|Eon||405<br>600<br>725||mJ<br>mJ<br>mJ| |AbschaltverlustenergieproPuls<br>Turn-offenergylossperpulse|IC= 1800 A, VCE= 900 V, LS= 30 nH<br>VGE= ±15 V, du/dt = 2500 V/µs (Tvj= 175°C)<br>RGoff= 0,68Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 175°C|Eoff||485<br>680<br>780||mJ<br>mJ<br>mJ| |Kurzschlußverhalten<br>SCdata|VGE ≤15 V, VCC= 1000 V<br>VCEmax= VCES-LsCE·di/dt<br>Tvj= 175°C<br>tP ≤10 µs,|ISC||7200||A| |Wärmewiderstand,ChipbisGehäuse<br>Thermalresistance,junctiontocase|proIGBT/perIGBT|RthJC|||16,5|K/kW| |Wärmewiderstand,GehäusebisKühlkörper<br>Thermalresistance,casetoheatsink|proIGBT/perIGBT<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)|RthCH||14,0||K/kW| |TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions||Tvj op|-40||175|°C| 2 V�3.2 2017-03-31 Datasheet FF1800R17IP5 **==> picture [86 x 38] intentionally omitted <==** ## **Diode,�Wechselrichter�/�Diode,�Inverter Höchstzulässige�Werte�/�Maximum�Rated�Values** |PeriodischeSpitzensperrspannung<br>Repetitivepeakreversevoltage|Tvj= 25°C|VRRM|1700|1700||V| |---|---|---|---|---|---|---| |Dauergleichstrom<br>ContinuousDCforwardcurrent||IF|1800|||A| |PeriodischerSpitzenstrom<br>Repetitivepeakforwardcurrent|tP= 1 ms|IFRM|3600|||A| |Grenzlastintegral<br>I²t-value|VR= 0 V, tP= 10 ms, Tvj= 125°C<br>VR= 0 V, tP= 10 ms, Tvj= 175°C|I²t|730<br>650|||kA²s<br>kA²s| |Spitzenverlustleistung<br>Maximumpowerdissipation|Tvj= 175°C|PRQM|1800|||kW| |**CharakteristischeWerte/CharacteristicValues**|||min.|typ.|max.|| |Durchlassspannung<br>Forwardvoltage|IF= 1800 A, VGE= 0 V<br>IF= 1800 A, VGE= 0 V<br>IF= 1800 A, VGE= 0 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 175°C|VF||1,75<br>1,70<br>1,70|2,10<br>2,05<br>2,05|V<br>V<br>V| |Rückstromspitze<br>Peakreverserecoverycurrent|IF= 1800 A, - diF/dt = 9100 A/µs (Tvj=175°C)<br>VR= 900 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 175°C|IRM||1350<br>1600<br>1800||A<br>A<br>A| |Sperrverzögerungsladung<br>Recoveredcharge|IF= 1800 A, - diF/dt = 9100 A/µs (Tvj=175°C)<br>VR= 900 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 175°C|Qr||315<br>620<br>810||µC<br>µC<br>µC| |AbschaltenergieproPuls<br>Reverserecoveryenergy|IF= 1800 A, - diF/dt = 9100 A/µs (Tvj=175°C)<br>VR= 900 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 175°C|Erec||160<br>365<br>480||mJ<br>mJ<br>mJ| |Wärmewiderstand,ChipbisGehäuse<br>Thermalresistance,junctiontocase|proDiode/perdiode|RthJC|||33,0|K/kW| |Wärmewiderstand,GehäusebisKühlkörper<br>Thermalresistance,casetoheatsink|proDiode/perdiode<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)|RthCH||17,0||K/kW| |TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions||Tvj op|-40||175|°C| ## **NTC-Widerstand�/�NTC-Thermistor Charakteristische�Werte�/�Characteristic�Values** |**NTC-Widerstand/NTC-Thermistor**<br>|**NTC-Widerstand/NTC-Thermistor**<br>|||||| |---|---|---|---|---|---|---| |**CharakteristischeWerte/CharacteristicValues**|||min.|typ.|max.|| |Nennwiderstand<br>Ratedresistance|TNTC= 25°C|R25||5,00||kΩ| |AbweichungvonR100<br>DeviationofR100|TNTC= 100°C, R100= 493Ω|∆R/R|-5||5|%| |Verlustleistung<br>Powerdissipation|TNTC= 25°C|P25|||20,0|mW| |B-Wert<br>B-value|R2= R25exp [B25/50(1/T2- 1/(298,15 K))]|B25/50||3375||K| |B-Wert<br>B-value|R2= R25exp [B25/80(1/T2- 1/(298,15 K))]|B25/80||3411||K| |B-Wert<br>B-value|R2= R25exp [B25/100(1/T2- 1/(298,15 K))]|B25/100||3433||K| Angaben�gemäß�gültiger�Application�Note. Specification�according�to�the�valid�application�note. 3 V�3.2 2017-03-31 Datasheet FF1800R17IP5 **==> picture [86 x 38] intentionally omitted <==** ## **Modul�/�Module** |**Modul/Module**||||||| |---|---|---|---|---|---|---| |Isolations-Prüfspannung<br>Isolationtestvoltage|RMS, f = 50 Hz, t = 1 min.|VISOL|4,0<br>|||kV| |MaterialModulgrundplatte<br>Materialofmodulebaseplate|||Cu|||| |Kriechstrecke<br>Creepagedistance|Kontakt-Kühlkörper/terminaltoheatsink<br>Kontakt-Kontakt/terminaltoterminal||33,0<br>33,0<br>|||mm| |Luftstrecke<br>Clearance|Kontakt-Kühlkörper/terminaltoheatsink<br>Kontakt-Kontakt/terminaltoterminal||19,0<br>19,0<br>|||mm| |VergleichszahlderKriechwegbildung<br>Comperativetrackingindex||CTI||> 400||| ||||min.|typ.|max.|| |Modulstreuinduktivität<br>Strayinductancemodule||LsCE||10||nH| |Modulleitungswiderstand,Anschlüsse-<br>Chip<br>Moduleleadresistance,terminals-chip|TC=25°C,proSchalter/perswitch|RCC'+EE'||0,10||mΩ| |Lagertemperatur<br>Storagetemperature||Tstg|-40||150|°C| |Anzugsdrehmomentf.Modulmontage<br>Mountingtorqueformodulmounting|SchraubeM5-Montagegem.gültigerApplikationsschrift<br>ScrewM5-Mountingaccordingtovalidapplicationnote|M|3,00||6,00|Nm| |Anzugsdrehmomentf.elektr.Anschlüsse<br>Terminalconnectiontorque|SchraubeM4-Montagegem.gültigerApplikationsschrift<br>ScrewM4-Mountingaccordingtovalidapplicationnote<br>SchraubeM8-Montagegem.gültigerApplikationsschrift<br>ScrewM8-Mountingaccordingtovalidapplicationnote|M|1,8<br>8,0|-<br>-|2,1<br>10|Nm<br>Nm| |Gewicht<br>Weight||G||1400||g| Höchstzulässige Bodenplattenbetriebstemperatur TBPmax = 150°C Maximum baseplate operation temperature TBPmax = 150°C V�3.2 2017-03-31 Datasheet 4 FF1800R17IP5 **==> picture [86 x 38] intentionally omitted <==** **Ausgangskennlinie�IGBT,Wechselrichter�(typisch) output�characteristic�IGBT,Inverter�(typical)** IC�=�f�(VCE) VGE�=�15�V **Ausgangskennlinienfeld�IGBT,Wechselrichter�(typisch) output�characteristic�IGBT,Inverter�(typical)** IC�=�f�(VCE) Tvj�=�175°C **==> picture [484 x 282] intentionally omitted <==** **----- Start of picture text -----**<br> 3600 3600<br>3400 T vj = 25°C 3400 V GE = 20V<br>3200 T T vj vj = 150°C = 175 ° C 3200 V V GE GE = 15V = 12V<br>VGE = 10V<br>3000 3000 VGE = 9V<br>VGE = 8V<br>2800 2800<br>2600 2600<br>2400 2400<br>2200 2200<br>2000 2000<br>1800 1800<br>1600 1600<br>1400 1400<br>1200 1200<br>1000 1000<br>800 800<br>600 600<br>400 400<br>200 200<br>0 0<br>0,0 0,4 0,8 1,2 1,6 2,0 2,4 2,8 3,2 3,6 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0 5,5 6,0<br>VCE [V] VCE [V]<br> [A] [A]<br>IC IC<br>**----- End of picture text -----**<br> **Übertragungscharakteristik�IGBT,Wechselrichter�(typisch) transfer�characteristic�IGBT,Inverter�(typical)** IC�=�f�(VGE) VCE�=�20�V ## **Schaltverluste�IGBT,Wechselrichter�(typisch) switching�losses�IGBT,Inverter�(typical)** Eon�=�f�(IC),�Eoff�=�f�(IC) VGE�=�±15�V,�RGon�=�0.56� Ω ,�RGoff�=�0.68� Ω ,�VCE�=�900�V **==> picture [487 x 282] intentionally omitted <==** **----- Start of picture text -----**<br> 3600 1800<br>3400 T vj = 25°C Eon, Tvj = 150°C<br>3200 T T vj vj = 150°C = 175 ° C 1600 E E on off , T , T vj vj = 175°C = 150 ° C<br>Eoff, Tvj = 175°C<br>3000<br>2800 1400<br>2600<br>2400 1200<br>2200<br>2000 1000<br>1800<br>1600 800<br>1400<br>1200 600<br>1000<br>800 400<br>600<br>400 200<br>200<br>0 0<br>5 6 7 8 9 10 11 12 0 600 1200 1800 2400 3000 3600<br>VGE [V] IC [A]<br> [A]<br>IC E [mJ]<br>**----- End of picture text -----**<br> V�3.2 2017-03-31 Datasheet 5 FF1800R17IP5 **==> picture [485 x 309] intentionally omitted <==** **----- Start of picture text -----**<br> Eon =f(R),E G off =f(R G) ZthJC = f(t)<br>VGE =+15V,1 C =1800A,V CE =900V<br>2800 100<br>Eon, Tvj = 150°C ZthJC : IGBT<br>2600 E E on , T vj = 175°C Y) ea<br>2400 EEoff off , T, Tvj vj = 150°C = 175°C<br>2200 Eea—_.oe)4 fereestinooae etmcetft oe e tectil eee<br>2000<br>1800 CEE 10 LUNPt ec|<br>1600 Uy AEE Pe<br>1400<br>1200 Coe a eeAeee<br>1000<br>1<br>800 sey i aia nl<br>J goussaeen SeoHEC<br>600 Co<br>400 i: 1 2 3 4<br>ri[K/kW]: 3,15 6,26 6,26 0,836<br>200 τ i[s]: 0,0222 0,0521 0,0521 1,07<br>0 CEEEEEEEEEE 0,1 po UN TT VT<br>0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0 5,5 6,0 0,001 0,01 0,1 1 10<br>RG [ Ω ] t [s]<br> [K/kW]<br>E [mJ]<br>thJC<br>Z<br>**----- End of picture text -----**<br> ## **(RBSOA)** IFF F)) **==> picture [486 x 310] intentionally omitted <==** **----- Start of picture text -----**<br> reverse bias safe operating area IGBT,Inverter (RBSOA) IFF =f(V F))<br>IC CE)<br>VGE ee sy, R Goff =068 Ω ,T vj =175°C<br>4200 3600<br>IC, Modul 3400 T vj = 25°C<br>IC, Chip 3200 T T vj vj = 150°C = 175 ° C if<br>3600<br>3000<br>2800<br>3000 2600<br>2400<br>2200<br>2400<br>2000<br>1800<br>1600<br>1800<br>1400<br>1200 ooo oo<br>1200 1000<br>800<br>600<br>600<br>400<br>200<br>0 0 PT [Tee]<br>0 200 400 600 800 1000 1200 1400 1600 1800 0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6 1,8 2,0 2,2 2,4<br>VCE [V] VF [V]<br> [A] [A]<br>IC IF<br>**----- End of picture text -----**<br> 6 Datasheet 2017-03-31 FF1800R17IP5 **==> picture [486 x 309] intentionally omitted <==** **----- Start of picture text -----**<br> Erec =f (I F) Erec =f(R G)<br>RGon =0.56 Ω ,V CE =900V IF =1800A,V CE =900V<br>600 650<br>Erec, Tvj = 150°C a Erec, Tvj = 150°C C<br>Erec, Tvj = 175°C - [-] 600 Erec, Tvj = 175°C<br>a“ ee [ee] |<br>, [=]<br>500 2 —_| 550<br>500<br>\<br>450<br>400 \<br>400 \<br>\N<br>350<br>300<br>300<br>250 —_<br>200 —<br>200<br>’ 150 ~<br>100<br>100<br>50<br>0 0<br>0 600 1200 1800 2400 3000 3600 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0 5,5 6,0<br>IF [A] RG [ Ω ]<br>E [mJ] E [mJ]<br>**----- End of picture text -----**<br> ZthJC =f (t) IR =f(V R) Tvj = **==> picture [236 x 282] intentionally omitted <==** **----- Start of picture text -----**<br> 100<br>ZthJC : Diode<br>[ia il eis TET,<br>10<br>i: 1 2 3 4<br>ri[K/kW]: 2,4 21,4 6,3 2,89<br>τ i[s]: 0,00212 0,0384 0,166 2,05<br>1<br>0,001 0,01 0,1 1 10<br>t [s]<br> [K/kW]<br>thJC<br>Z<br>**----- End of picture text -----**<br> **==> picture [240 x 282] intentionally omitted <==** **----- Start of picture text -----**<br> 4000<br>IR, Modul<br>=<br>3500<br>3000<br>2500<br>2000<br>1500<br>1000<br>500<br>0<br>0 200 400 600 800 1000 1200 1400 1600 1800<br>VR [V]<br> [A]<br>IR<br>**----- End of picture text -----**<br> Datasheet 7 2017-03-31 FF1800R17IP5 **==> picture [86 x 38] intentionally omitted <==** ## **NTC-Widerstand-Temperaturkennlinie�(typisch) NTC-Thermistor-temperature�characteristic�(typical)** R�=�f�(T) **==> picture [240 x 282] intentionally omitted <==** **----- Start of picture text -----**<br> 100000<br>Rtyp<br>10000<br>1000<br>100<br>0 25 50 75 100 125 150<br>TC [°C]<br>] Ω<br>R[<br>**----- End of picture text -----**<br> 8 V�3.2 2017-03-31 Datasheet FF1800R17IP5 **==> picture [86 x 38] intentionally omitted <==** ## **Schaltplan�/�Circuit�diagram** **==> picture [99 x 145] intentionally omitted <==** ## **Gehäuseabmessungen�/�Package�outlines** **==> picture [494 x 324] intentionally omitted <==** **----- Start of picture text -----**<br> 36 [�] [0,2] (2x) 8 [�] [0,1] (8x) 18 [�] [0,2] (4x)<br>250 [�] [1]<br>A<br>224<br>187<br>recommended design height lower side 150<br>bus bar to baseplate 113<br>76<br>38,25 [�] [0,25] screwing depthmax. 8mm (8x) 24 58 M8 (8x) � � 0,8 A B C � 5,5 -0,2 (14x) � � 0,5 A B C<br>7,5 + 0,5 6 8x 14x<br>max. 3<br>screwing depth<br>max. 16mm (8x)<br>max. 2 26 [�] [0,25] B 14( � 5,5) M4 (8x) � 8x � 0,8 A B C ( � 5,5) C<br>recommended design height lower side 25<br>PCB to baseplate 39<br>64<br>78<br>92<br>103<br>117<br>156<br>195<br>234<br>10 (6x)<br>23,60,3 � 73 890,5 �<br>37 39<br>0,3 � (2x) (2x)<br>3,8 (8x) 20,6 0,3 � 0,3 �<br>25,1 22,1<br> (8x)<br>11,80,3 �<br>**----- End of picture text -----**<br> 9 V�3.2 2017-03-31 Datasheet ## **WARNHINWEIS** ## **WARNINGS**
Updated at April 28, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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