Image not available
Illustrative purposes only
FF150R17KE4HOSA1
IGBT Module, Dual, 250 A, 1.95 V, 1.1 kW, 150 °C, Module
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: INFINEON
- Product type: IGBT Modules
- Transistor Polarity:Dual NPN; DC Collector Current:250A; Collector Emitter Saturation Voltage Vce(on):1.95V; Power Dissipation Pd:1.1kW; Collector Emitter Voltage V(br)ceo:1.7kV; Trans
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 7Pins
- Product Range: -
- IGBT Technology: IGBT 4 [Trench/Field Stop]
- IGBT Termination: Stud
- Power Dissipation: 1.1kW
- IGBT Configuration: Dual
- Transistor Mounting: Panel
- Transistor Polarity: Dual NPN
- DC Collector Current: 250A
- Power Dissipation Pd: 1.1kW
- Transistor Case Style: Module
- Operating Temperature Max: 150°C
- Junction Temperature Tj Max: 150°C
- Continuous Collector Current: 250A
- Collector Emitter Voltage Max: 1.7kV
- Collector Emitter Voltage V(br)ceo: 1.7kV
- Collector Emitter Saturation Voltage: 1.95V
- Collector Emitter Saturation Voltage Vce(on): 1.95V
| Delivery and price | |
|---|---|
| Units per pack | 10 |
| Price | 58.82 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
## FF150R17KE4 VCES = 1700V IC nom = 150A / ICRM = 300A ## アプリケーションの可能性 - UPSシステム - ハイパワーコンバータ - • モーター駆動 - 風力タービン - - - - ## 電気的特性 - CEsat • CEsat - • 優れたロバスト性 • Unbeatable - • - 正温度特性を持ったVCEsat - VCEsat ## 機械的特性 - • - • - CTI(比較トラッキング指数）>400のモジュールパッケージ - • 標準ハウジング • - 絶縁されたベースプレート • - • - 長い縁面/空間距離 **Digit** Datasheet www.infineon.com 2018-04-06 FF150R17KE4 **==> picture [86 x 38] intentionally omitted <==** ## 暫定データ Preliminary�Data ## IGBT-�インバータ�/�IGBT,Inverter 最大定格�/�Maximum�Rated�Values |最大定格/MaximumRatedValues||||||| |---|---|---|---|---|---|---| |コレクタ・エミッタ間電圧<br>Collector-emittervoltage|Tvj= 25°C|VCES|1700|||V| |連続DCコレクタ電流<br>ContinuousDCcollectorcurrent|TC= 100°C, Tvj max= 175°C|IC nom|150|||A| |繰り返しピークコレクタ電流<br>Repetitivepeakcollectorcurrent|tP= 1 ms|ICRM|300|||A| |ゲート・エミッタ間ピーク電圧<br>Gate-emitterpeakvoltage||VGES|+/-20|||V| |電気的特性/CharacteristicValues|||min.|typ.|max.|| |コレクタ・エミッタ間飽和電圧<br>Collector-emittersaturationvoltage|IC= 150 A, VGE= 15 V<br>IC= 150 A, VGE= 15 V<br>IC= 150 A, VGE= 15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|VCE sat||1,95<br>2,35<br>2,45|2,30|V<br>V<br>V| |ゲート・エミッタ間しきい値電圧<br>Gatethresholdvoltage|IC= 6,00 mA, VCE= VGE, Tvj= 25°C|VGEth|5,20|5,80|6,40|V| |ゲート電荷量<br>Gatecharge|VGE= -15 / 15 V|QG||1,50||µC| |内蔵ゲート抵抗<br>Internalgateresistor|Tvj= 25°C|RGint||4,3||Ω| |入力容量<br>Inputcapacitance|f = 1000 kHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V|Cies||12,0||nF| |帰還容量<br>Reversetransfercapacitance|f = 1000 kHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V|Cres||0,41||nF| |コレクタ・エミッタ間遮断電流<br>Collector-emittercut-offcurrent|VCE= 1700 V, VGE= 0 V, Tvj= 25°C|ICES|||1,0|mA| |ゲート・エミッタ間漏れ電流<br>Gate-emitterleakagecurrent|VCE= 0 V, VGE= 20 V, Tvj= 25°C|IGES|||100|nA| |ターンオン遅れ時間（誘導負荷）<br>Turn-ondelaytime,inductiveload|IC= 150 A, VCE= 900 V<br>VGE= -15 / 15 V<br>RGon= 4,8Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|td on||0,24<br>0,28<br>0,30||µs<br>µs<br>µs| |ターンオン上昇時間（誘導負荷）<br>Risetime,inductiveload|IC= 150 A, VCE= 900 V<br>VGE= -15 / 15 V<br>RGon= 4,8Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|tr||0,05<br>0,055<br>0,055||µs<br>µs<br>µs| |ターンオフ遅れ時間（誘導負荷）<br>Turn-offdelaytime,inductiveload|IC= 150 A, VCE= 900 V<br>VGE= -15 / 15 V<br>RGoff= 4,8Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|td off||0,70<br>0,74<br>0,78||µs<br>µs<br>µs| |ターンオフ下降時間（誘導負荷）<br>Falltime,inductiveload|IC= 150 A, VCE= 900 V<br>VGE= -15 / 15 V<br>RGoff= 4,8Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|tf||0,08<br>0,13<br>0,15||µs<br>µs<br>µs| |ターンオンスイッチング損失<br>Turn-onenergylossperpulse|IC= 150 A, VCE= 900 V, Lσ= 60 nH<br>di/dt = 3000 A/µs (Tvj= 150°C)<br>VGE= -15 / 15 V, RGon= 4,8Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Eon||47,0<br>58,0<br>63,0||mJ<br>mJ<br>mJ| |ターンオフスイッチング損失<br>Turn-offenergylossperpulse|IC= 150 A, VCE= 900 V, Lσ= 60 nH<br>du/dt = 3600 V/µs (Tvj= 150°C)<br>VGE= -15 / 15 V, RGoff= 4,8Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Eoff||28,0<br>44,0<br>49,0||mJ<br>mJ<br>mJ| |短絡電流<br>SCdata|VGE ≤15 V, VCC= 1000 V<br>VCEmax= VCES-LsCE·di/dt<br>Tvj= 150°C<br>tP ≤10 µs,|ISC||680||A| |ジャンクション・ケース間熱抵抗<br>Thermalresistance,junctiontocase|IGBT部（１素子当り）/perIGBT|RthJC|||0,135|K/W| |ケース・ヒートシンク間熱抵抗<br>Thermalresistance,casetoheatsink|IGBT部（１素子当り）/perIGBT<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)|RthCH||0,0370||K/W| |動作温度<br>Temperatureunderswitchingconditions||Tvj op|-40||150|°C| 2 V�2.3 2018-04-06 Datasheet FF150R17KE4 **==> picture [86 x 38] intentionally omitted <==** ## 暫定データ Preliminary�Data ## Diode、インバータ�/�Diode,�Inverter 最大定格�/�Maximum�Rated�Values |最大定格/MaximumRatedValues||||||| |---|---|---|---|---|---|---| |ピーク繰返し逆電圧<br>Repetitivepeakreversevoltage|Tvj= 25°C|VRRM|1700|||V| |連続DC電流<br>ContinuousDCforwardcurrent||IF|150|||A| |ピーク繰返し順電流<br>Repetitivepeakforwardcurrent|tP= 1 ms|IFRM|300|||A| |電流二乗時間積<br>I²t-value|VR= 0 V, tP= 10 ms, Tvj= 125°C<br>VR= 0 V, tP= 10 ms, Tvj= 150°C|I²t|10000<br>9500<br>|||A²s<br>A²s| |電気的特性/CharacteristicValues|||min.|typ.|max.|| |順電圧<br>Forwardvoltage|IF= 150 A, VGE= 0 V<br>IF= 150 A, VGE= 0 V<br>IF= 150 A, VGE= 0 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|VF||1,65<br>1,70<br>1,75|2,05|V<br>V<br>V| |ピーク逆回復電流<br>Peakreverserecoverycurrent|IF= 150 A, - diF/dt = 3000 A/µs (Tvj=150°C)<br>VR= 900 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|IRM||180<br>220<br>240||A<br>A<br>A| |逆回復電荷量<br>Recoveredcharge|IF= 150 A, - diF/dt = 3000 A/µs (Tvj=150°C)<br>VR= 900 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Qr||45,0<br>80,0<br>85,0||µC<br>µC<br>µC| |逆回復損失<br>Reverserecoveryenergy|IF= 150 A, - diF/dt = 3000 A/µs (Tvj=150°C)<br>VR= 900 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Erec||20,0<br>40,0<br>44,0||mJ<br>mJ<br>mJ| |ジャンクション・ケース間熱抵抗<br>Thermalresistance,junctiontocase|/Diode（１素子当り）/perdiode|RthJC|||0,160|K/W| |ケース・ヒートシンク間熱抵抗<br>Thermalresistance,casetoheatsink|/Diode（１素子当り）/perdiode<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)|RthCH||0,0440||K/W| |動作温度<br>Temperatureunderswitchingconditions||Tvj op|-40||150|°C| |モジュール/Module||||||| |絶縁耐圧<br>Isolationtestvoltage|RMS, f = 50 Hz, t = 1 min.|VISOL|4,0|||kV| |ベースプレート材質<br>Materialofmodulebaseplate|||Cu|||| |内部絶縁<br>Internalisolation|基礎絶縁(クラス1,IEC61140)<br>basicinsulation(class1,IEC61140)||Al2O3|||| |沿面距離<br>Creepagedistance|連絡方法-ヒートシンク/terminaltoheatsink<br>連絡方法-連絡方法/terminaltoterminal||29,0<br>23,0|||mm| |空間距離<br>Clearance|連絡方法-ヒートシンク/terminaltoheatsink<br>連絡方法-連絡方法/terminaltoterminal||23,0<br>11,0|||mm| |相対トラッキング指数<br>Comperativetrackingindex||CTI||> 400||| ||||min.|typ.|max.|| |内部インダクタンス<br>Strayinductancemodule||LsCE||20||nH| |パワーターミナル・チップ間抵抗<br>Moduleleadresistance,terminals-chip|TC=25°C,/スイッチ/perswitch|RCC'+EE'||0,70||mΩ| |保存温度<br>Storagetemperature||Tstg|-40||125|°C| |取り付けネジ締め付けトルク<br>Mountingtorqueformodulmounting|取り付けネジM6<br>適切なアプリケーションノートによるマウンティング<br>ScrewM6-Mountingaccordingtovalidapplicationnote|M|3,00||6,00|Nm| |主端子ネジ締め付けトルク<br>Terminalconnectiontorque|取り付けネジM6<br>適切なアプリケーションノートによるマウンティング<br>ScrewM6-Mountingaccordingtovalidapplicationnote|M|2,5|-|5,0|Nm| |質量<br>Weight||G||340||g| 3 V�2.3 2018-04-06 Datasheet FF150R17KE4 **==> picture [86 x 38] intentionally omitted <==** ## 暫定データ Preliminary�Data 出力特性�IGBT-�インバータ�(Typical) **output�characteristic�IGBT,Inverter�(typical)** IC�=�f�(VCE) VGE�=�15�V 出力特性�IGBT-�インバータ�(Typical) **output�characteristic�IGBT,Inverter�(typical)** IC�=�f�(VCE) Tvj�=�150°C **==> picture [484 x 282] intentionally omitted <==** **----- Start of picture text -----**<br> 300 300<br>Tvj = 25°C VGE = 20V<br>Tvj = 125°C VGE = 15V<br>270 T vj = 150°C 270 V GE =12 V<br>VGE = 10V<br>VGE = 9V<br>240 240 V GE = 8V<br>210 210<br>180 180<br>150 150<br>120 120<br>90 90<br>60 60<br>30 30<br>0 0<br>0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0<br>VCE [V] VCE [V]<br> [A] [A]<br>IC IC<br>**----- End of picture text -----**<br> 伝達特性�IGBT-�インバータ�(Typical) **transfer�characteristic�IGBT,Inverter�(typical)** IC�=�f�(VGE) VCE�=�20�V スイッチング損失�IGBT-�インバータ�(Typical) **switching�losses�IGBT,Inverter�(typical)** Eon�=�f�(IC),�Eoff�=�f�(IC) VGE�=�±15�V,�RGon�=�4.8� Ω ,�RGoff�=�4.8� Ω ,�VCE�=�900�V **==> picture [485 x 282] intentionally omitted <==** **----- Start of picture text -----**<br> 300 150<br>Tvj = 25°C Eon, Tvj = 125°C<br>Tvj = 125°C Eon, Tvj = 150°C<br>270 T vj = 150°C 135 E off , T vj = 125°C<br>Eoff, Tvj = 150°C<br>240 120<br>210 105<br>180 90<br>150 75<br>120 60<br>90 45<br>60 30<br>30 15<br>0 0<br>5 6 7 8 9 10 11 12 13 0 50 100 150 200 250 300<br>VGE [V] IC [A]<br> [A]<br>IC E [mJ]<br>**----- End of picture text -----**<br> V�2.3 2018-04-06 Datasheet 4 FF150R17KE4 ## 暫定データ **==> picture [486 x 656] intentionally omitted <==** **----- Start of picture text -----**<br> Eon =f(R),E G off =f(R G) ZthJC = f(t)<br>VGE =+15V,1 C =150A,V CE =900V<br>150 1<br>Eon, Tvj = 125°C Se ZthJC : IGBT<br>Eon, Tvj = 150°C<br>135 E off , T vj = 125°C<br>Eoff, Tvj = 150°C<br>120<br>a Sati stati nih aii<br>105 oa STM ORTIGORTTiBGt<br>nn<br>0,1<br>a Pteete<br>90 ¥ pot PA<br>oe ECAz<br>75<br>60<br>a f<br>0,01<br>45<br>30<br>i: 1 2 3 4<br>15 ri[K/W]: 0,0045 0,0207 0,0955 0,0143<br>τ i[s]: 0,0008 0,013 0,05 0,6<br>Pt eet ey po<br>0 0,001<br>EERE Tom<br>0 5 10 15 20 25 30 35 40 45 0,001 0,01 0,1 1 10<br>RG [ Ω ] t [s]<br>VINA PARSE IGBT- 1» /\—2 (RBSOA)) IBS EF Diode, 4 /\—2% ( typical)<br>reverse bias safe operating area IGBT,Inverter (RBSOA) forward characteristic of Diode, Inverter (typical)<br>IC =f(V CE) IF =f(V F)<br>VGE NS V.R Goff =4.8 Ω ,T vj =150°C<br>400 300<br>IC, Modul Tvj = 25°C<br>IC, Chip Tvj = 125°C<br>350 a 270 = T vj = 150°C | ///<br>240<br>300<br>eee) 210<br>|<br>250 |<br>| 180<br>|<br>200 | 150<br>|<br>|<br>120<br>150 |<br>|<br>| 90<br>100<br>| 60<br>eee y|eee<br>50 | 30<br>0 0<br>0 200 400 600 800 1000 1200 1400 1600 1800 0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6 1,8 2,0 2,2 2,4<br>VCE [V] VF [V]<br> [K/W]<br>E [mJ]<br>thJC<br>Z<br> [A] [A]<br>IC IF<br>**----- End of picture text -----**<br> Datasheet 5 2018-04-06 FF150R17KE4 ## 暫定データ **==> picture [485 x 309] intentionally omitted <==** **----- Start of picture text -----**<br> Erec = f (I F) Erec =f(R G)<br>RGon 3 Ω ,V CE =900V IF = 150A, V CE = 900 V<br>60 50<br>55 E E rec rec , T , T vj vj = 125°C = 150 ° C EErecrec, T, Tvjvj = 125°C = 150°C<br>45<br>== =<br>50 —<br>40<br>45<br>35 xe<br>40<br>30 SNe<br>35<br>30 25 ON :<br>25<br>20<br>20<br>15<br>15 P/4e<br>ee<br>10<br>10<br>5<br>5<br>0 0<br>0 50 100 150 200 250 300 0 5 10 15 20 25 30 35 40 45<br>IF [A] RG [ Ω ]<br>E [mJ] E [mJ]<br>**----- End of picture text -----**<br> **==> picture [238 x 310] intentionally omitted <==** **----- Start of picture text -----**<br> ZthJC = f (t)<br>1 a ee<br>ZthJC : Diode<br>a egee ee<br>|<br>0,1<br>PA tt<br>ETHIEHAE RE<br>0,01<br>i: 1 2 3 4<br>ri[K/W]: 0,005324 0,02455 0,1133 0,01686<br>τ i[s]: 0,0008 0,013 0,05 0,6<br>0,001<br>0,001 0,01 0,1 1 10<br>t [s]<br> [K/W]<br>thJC<br>Z<br>**----- End of picture text -----**<br> 6 Datasheet 2018-04-06 FF150R17KE4 **==> picture [86 x 38] intentionally omitted <==** 回路図�/�Circuit�diagram 暫定データ Preliminary�Data **==> picture [272 x 154] intentionally omitted <==** ## パッケージ概要�/�Package�outlines **==> picture [36 x 7] intentionally omitted <==** **----- Start of picture text -----**<br> Infineon<br>**----- End of picture text -----**<br> V�2.3 2018-04-06 Datasheet 7 ## Trademarks ## 重要事項 ーズ（以下、「インフィニオン」）はここに、第三者の知的所有権の不侵害の保証を含むがこれに限らず、あらゆる種類の一切の保証およ び責任を否定いたします。 さらに、本文書に記載された一切の情報は、お客様の用途におけるお客様の製品およびインフィニオン製品の一切の使用に関し、本文 書に記載された義務ならびに一切の関連する法的要件、規範、および基準をお客様が遵守することを条件としています。 本文書に含まれるデータは、技術的訓練を受けた従業員のみを対象としています。本製品の対象用途への適合性、およびこれら用途 に関連して本文書に記載された製品情報の完全性についての評価は、お客様の技術部門の責任にて実施してください。 本製品、技術、納品条件、および価格についての詳しい情報は、インフィニオンの最寄りの営業所までお問い合わせください （www.infineon.com）。 ## 警告事項 技術的要件に伴い、製品には危険物質が含まれる可能性があります。当該種別の詳細については、インフィニオンの最寄りの営業所ま でお問い合わせください。 インフィニオンの正式代表者が署名した書面を通じ、インフィニオンによる明示の承認が存在する場合を除き、インフィニオンの製品は、 当該製品の障害またはその使用に関する一切の結果が、合理的に人的傷害を招く恐れのある一切の用途に使用することはできない こと予めご了承ください ## WARNINGS
Updated at April 28, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
About Novapart
Novapart is a B2B electronic component broker specialising in stock shortages and cost reduction. We source hard-to-find parts and identify compliant alternatives across a catalogue of 410,000+ components from 500+ manufacturers.
Learn more →Stock Shortage Specialist
When a component is unavailable, discontinued or has an unacceptable lead time, we tap into our network of vetted European and Asian distributors to source what you need — without compromising on quality or traceability.
Request a quote →Compliant Alternatives
We identify pin-to-pin, electrically equivalent substitutes that meet the same certifications (RoHS, AEC-Q100, REACH) as your original specification — validated against datasheets, not just part numbers. Often at a lower cost.
BOM Analysis service →