![FF150R12RT4HOSA1 — IGBT Module, Dual [Half Bridge], 150 A, 1.75 V, 790 W, 150 °C, Module](/media/E/1/9/82B81647D3E1091E.webp)
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FF150R12RT4HOSA1
IGBT Module, Dual [Half Bridge], 150 A, 1.75 V, 790 W, 150 °C, Module
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: INFINEON
- Product type: IGBT Modules
- Transistor Polarity:N Channel; DC Collector Current:150A; Collector Emitter Saturation Voltage Vce(on):1.75V; Power Dissipation Pd:790W; Collector Emitter Voltage V(br)ceo:1.2kV; Transist
- SVHC: No SVHC (23-Jan-2024)
- Product Range: -
- IGBT Technology: IGBT 4 [Trench/Field Stop]
- IGBT Termination: Stud
- Power Dissipation: 790W
- IGBT Configuration: Dual [Half Bridge]
- Transistor Mounting: Panel
- Transistor Polarity: N Channel
- DC Collector Current: 150A
- Power Dissipation Pd: 790W
- Transistor Case Style: Module
- Operating Temperature Max: 150°C
- Junction Temperature Tj Max: 150°C
- Continuous Collector Current: 150A
- Collector Emitter Voltage Max: 1.2kV
- Collector Emitter Voltage V(br)ceo: 1.2kV
- Collector Emitter Saturation Voltage: 1.75V
- Collector Emitter Saturation Voltage Vce(on): 1.75V
| Delivery and price | |
|---|---|
| Units per pack | 10 |
| Price | 79.81 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
IGBT-模块 IGBT-modules ## FF150R12RT4 VCES = 1200V IC nom = 150A / ICRM = 300A - **典型应用** • 高频开关应用 • 电机传动 • UPS系统 - - - **电气特性** - • 低开关损耗 - CEsat - • T yop = • VCEsat 7 IF **机械特性** • 绝缘的基板 • 标封装 - - - CEsat - • T yop = • VCEsat - - 1 技术信息�/�Technical�Information IGBT-模块IGBT-modules FF150R12RT4 **==> picture [86 x 38] intentionally omitted <==** ## **初步数据 Preliminary�Data** ## **IGBT,�逆变器�/�IGBT,Inverter 最大额定值�/�Maximum�Rated�Values** |技术信息/TechnicalInformation<br>FF150R12RT4<br>IGBT-模块<br>IGBT-modules|| |---|---| |preparedby:MK<br>approvedby:WR<br>dateofpublication:2013-11-05<br>revision:2.1<br>**初步数据**<br>**PreliminaryData**<br>**IGBT,逆变器/IGBT,Inverter**<br>**最大额定值/MaximumRatedValues**<br>集电极－发射极电压<br>Collector-emittervoltage<br>Tvj= 25°C<br>VCES<br>1200<br>V<br>连续集电极直流电流<br>ContinuousDCcollectorcurrent<br>TC= 100°C, Tvj max= 175°C<br>IC nom<br>150<br>A<br>集电极重复峰值电流<br>Repetitivepeakcollectorcurrent<br>tP= 1 ms<br>ICRM<br>300<br>A<br>总功率损耗<br>Totalpowerdissipation<br>TC= 25°C, Tvj max= 175°C<br>Ptot<br>790<br>W<br>栅极－发射极峰值电压<br>Gate-emitterpeakvoltage<br>VGES<br>+/-20<br>V<br>**特征值/CharacteristicValues**<br>min.<br>typ.<br>max.<br>集电极－发射极饱和电压<br>Collector-emittersaturationvoltage<br>IC= 150 A, VGE= 15 V<br>IC= 150 A, VGE= 15 V<br>IC= 150 A, VGE= 15 V<br>VCE sat<br>1,75<br>2,05<br>2,10<br>2,15<br>V<br>V<br>V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>栅极阈值电压<br>Gatethresholdvoltage<br>IC= 5,30 mA, VCE= VGE, Tvj= 25°C<br>VGEth<br>5,2<br>5,8<br>6,4<br>V<br>栅极电荷<br>Gatecharge<br>VGE= -15 V ... +15 V<br>QG<br>1,25<br>µC<br>内部栅极电阻<br>Internalgateresistor<br>Tvj= 25°C<br>RGint<br>5,0<br>Ω<br>输入电容<br>Inputcapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cies<br>9,35<br>nF<br>反向传输电容<br>Reversetransfercapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cres<br>0,35<br>nF<br>集电极-发射极截止电流<br>Collector-emittercut-offcurrent<br>VCE= 1200 V, VGE= 0 V, Tvj= 25°C<br>ICES<br>1,0<br>mA<br>栅极-发射极漏电流<br>Gate-emitterleakagecurrent<br>VCE= 0 V, VGE= 20 V, Tvj= 25°C<br>IGES<br>100<br>nA<br>开通延迟时间(电感负载)<br>Turn-ondelaytime,inductiveload<br>IC= 150 A, VCE= 600 V<br>VGE= ±15 V<br>RGon= 1,1Ω<br>td on<br>0,13<br>0,15<br>0,15<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>上升时间(电感负载)<br>Risetime,inductiveload<br>IC= 150 A, VCE= 600 V<br>VGE= ±15 V<br>RGon= 1,1Ω<br>tr<br>0,02<br>0,03<br>0,035<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>关断延迟时间(电感负载)<br>Turn-offdelaytime,inductiveload<br>IC= 150 A, VCE= 600 V<br>VGE= ±15 V<br>RGoff= 1,1Ω<br>td off<br>0,30<br>0,38<br>0,40<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>下降时间(电感负载)<br>Falltime,inductiveload<br>IC= 150 A, VCE= 600 V<br>VGE= ±15 V<br>RGoff= 1,1Ω<br>tf<br>0,045<br>0,08<br>0,09<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>开通损耗能量(每脉冲)<br>Turn-onenergylossperpulse<br>IC= 150 A, VCE= 600 V, LS= 30 nH<br>VGE= ±15 V, di/dt = 3400 A/µs (Tvj= 150°C)<br>RGon= 1,1Ω<br>Eon<br>8,50<br>13,5<br>15,0<br>mJ<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>关断损耗能量(每脉冲）<br>Turn-offenergylossperpulse<br>IC= 150 A, VCE= 600 V, LS= 30 nH<br>VGE= ±15 V, du/dt = 3300 V/µs (Tvj= 150°C)<br>RGoff= 1,1Ω<br>Eoff<br>8,50<br>13,5<br>15,5<br>mJ<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>短路数据<br>SCdata<br>VGE ≤15 V, VCC= 800 V<br>VCEmax= VCES-LsCE·di/dt<br>ISC<br>600<br>A<br>Tvj= 150°C<br>tP ≤10 µs,<br>结－外壳热阻<br>Thermalresistance,junctiontocase<br>每个IGBT/perIGBT<br>RthJC<br>0,19<br>K/W<br>外壳－散热器热阻<br>Thermalresistance,casetoheatsink<br>每个IGBT/perIGBT<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)<br>RthCH<br>0,081<br>K/W<br>在开关状态下温度<br>Temperatureunderswitchingconditions<br>Tvj op<br>-40<br>150<br>°C|| 2 ## 技术信息�/�Technical�Information IGBT-模块IGBT-modules FF150R12RT4 **==> picture [86 x 38] intentionally omitted <==** ## **初步数据 Preliminary�Data** ## **二极管,逆变器�/�Diode,�Inverter 最大额定值�/�Maximum�Rated�Values** |反向重复峰值电压<br>Repetitivepeakreversevoltage|Tvj= 25°C|VRRM|1200|1200||V| |---|---|---|---|---|---|---| |连续正向直流电流<br>ContinuousDCforwardcurrent||IF|150|||A| |正向重复峰值电流<br>Repetitivepeakforwardcurrent|tP= 1 ms|IFRM|300|||A| |I2t-值<br>I²t-value|VR= 0 V, tP= 10 ms, Tvj= 125°C<br>VR= 0 V, tP= 10 ms, Tvj= 150°C|I²t|4100<br>4000|||A²s<br>A²s| |**特征值/CharacteristicValues**|||min.|typ.|max.|| |正向电压<br>Forwardvoltage|IF= 150 A, VGE= 0 V<br>IF= 150 A, VGE= 0 V<br>IF= 150 A, VGE= 0 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|VF||1,75<br>1,65<br>1,65|2,20|V<br>V<br>V| |反向恢复峰值电流<br>Peakreverserecoverycurrent|IF= 150 A, - diF/dt = 3400 A/µs (Tvj=150°C)<br>VR= 600 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|IRM||120<br>140<br>150||A<br>A<br>A| |恢复电荷<br>Recoveredcharge|IF= 150 A, - diF/dt = 3400 A/µs (Tvj=150°C)<br>VR= 600 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Qr||14,0<br>24,0<br>28,0||µC<br>µC<br>µC| |反向恢复损耗（每脉冲）<br>Reverserecoveryenergy|IF= 150 A, - diF/dt = 3400 A/µs (Tvj=150°C)<br>VR= 600 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Erec||5,00<br>8,50<br>10,0||mJ<br>mJ<br>mJ| |结－外壳热阻<br>Thermalresistance,junctiontocase|每个二极管/perdiode|RthJC|||0,31|K/W| |外壳－散热器热阻<br>Thermalresistance,casetoheatsink|每个二极管/perdiode<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)|RthCH||0,13||K/W| |在开关状态下温度<br>Temperatureunderswitchingconditions||Tvj op|-40||150|°C| date�of�publication:�2013-11-05 revision:�2.1 prepared�by:�MK approved�by:�WR 3 IGBT-模块 IGBT-modules ## 技术信息�/�Technical�Information ## FF150R12RT4 **==> picture [86 x 38] intentionally omitted <==** ## **初步数据 Preliminary�Data** ## **模块�/�Module** |**模块/Module**||||||| |---|---|---|---|---|---|---| |绝缘测试电压<br>Isolationtestvoltage|RMS, f = 50 Hz, t = 1 min.|VISOL|4,0|||kV| |模块基板材料<br>Materialofmodulebaseplate|||Cu|||| |内部绝缘<br>Internalisolation|基本绝缘(class1,IEC61140)<br>basicinsulation(class1,IEC61140)||Al2O3|||| |爬电距离<br>Creepagedistance|端子-散热片/terminaltoheatsink<br>端子-端子/terminaltoterminal||17,0<br>20,0|||mm| |电气间隙<br>Clearance|端子-散热片/terminaltoheatsink<br>端子-端子/terminaltoterminal||17,0<br>9,5|||mm| |相对电痕指数<br>Comperativetrackingindex||CTI||> 200||| ||||min.|typ.|max.|| |外壳－散热器热阻<br>Thermalresistance,casetoheatsink|每个模块/permodule<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)|RthCH||0,05||K/W| |杂散电感,模块<br>Strayinductancemodule||LsCE||30||nH| |模块引线电阻,端子-芯片<br>Moduleleadresistance,terminals-chip|TC=25°C,每个开关/perswitch|RCC'+EE'||0,65||mΩ| |储存温度<br>Storagetemperature||Tstg|-40||125|°C| |模块安装的安装扭距<br>Mountingtorqueformodulmounting|螺丝M6根据相应的应用手册进行安装<br>ScrewM6-Mountingaccordingtovalidapplicationnote|M|3,00|-|5,00|Nm| |端子联接扭距<br>Terminalconnectiontorque|螺丝M5根据相应的应用手册进行安装<br>ScrewM5-Mountingaccordingtovalidapplicationnote|M|2,5|-|5,0|Nm| |重量<br>Weight||G||160||g| Power Cycling Zuverlässigkeit bei Tvjop=125°C: - entspricht gültiger Spezifikation für Standard Module bei Tvjmax=125°C; 300.000 Zyklen @ dTj=50K Power Cycling Capability at Tvjop=125°C: - according to valid specification for standard modules at Tvjmax=125°C; 300.000 cycles @ dTj=50K date�of�publication:�2013-11-05 revision:�2.1 prepared�by:�MK approved�by:�WR 4 IGBT-模块 IGBT-modules ## FF150R12RT4 ## **初步数据** **==> picture [487 x 596] intentionally omitted <==** **----- Start of picture text -----**<br> IC =f(V CE) IC =f(V CE)<br>VGE =15V Tvj = 150°C<br>300 a | y v 300 es<br>Tvj = 25°C VGE = 19V<br>270 Tvj = 125°C 270 B VGE = 17V oe<br>E Tvj = 150°C LS) VGE = 15V |<br>VGE = 13V<br>240 Pe 240 VGE = 11V i7ceann<br>VGE = 9V<br>[E] [e]<br>210 210<br>Pt | py [ye]<br>eee /<br>180 180<br>[Ls eee eee eae<br>eae eee eee<br>150 150<br>120 120<br>ae eee ee eee Zee<br>90 eee 90 oan<br>ee eeee<br>60 60<br>ee ‘ ee ee ‘77<br>30 30<br>0 0<br>0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0<br>VCE [V] VCE [V]<br>feaistt IGBT, Ses (AD) FFHIR IGBT, HSS ( FAB)<br>transfer characteristic IGBT,Inverter (typical) switching losses IGBT, Inverter (typical)<br>IC =f(V GE) Eon =f(l),E C off =f(I C)<br>VCE =20V VGE =415V,R Gon =11 Ω ,R Goff =1.1 Ω ,V CE =600V<br>300 50<br>Tvj = 25°C Eon, Tvj = 125°C<br>270 Tvj = 125°C 45 Eoff, Tvj = 125°C<br>EF Tvj = 150°C Lo PO Eon, Tvj = 150°C E<br>Eoff, Tvj = 150°C<br>240 40<br>a] BE P opo<br>210 35<br>aaa ae t f<br>180 30<br>150 25<br>pt it ll Lie<br>120 20<br>PPT eer<br>90 15<br>ee | ee LZ<br>60 10<br>“7 LE<br>30 5<br>ee ee ee<br>0 0<br>poet TTT | Pe<br>5 6 7 8 9 10 11 12 13 0 30 60 90 120 150 180 210 240 270 300<br>VGE [V] IC [A]<br> [A] [A]<br>IC IC<br> [A]<br>IC E [mJ]<br>**----- End of picture text -----**<br> 5 IGBT-模块 IGBT-modules ## FF150R12RT4 ## **初步数据** **==> picture [486 x 616] intentionally omitted <==** **----- Start of picture text -----**<br> switchingFFRIRE IGBT,losses HAIGBT,Inverter( A) (typical) transientBeASTARAithermalIGBT, iimpedance 3535 IGBT, Inverter<br>Eon =f(R),E G off =f(R G) ZthJC = f (t)<br>VGE =+15V,1 C =150A,V CE =600V<br>40 1<br>Eon, Tvj = 125°C ZthJC : IGBT<br>HH— EE HH} tH<br>36 Eoff, Tvj = 125°C ror e ee<br>Eon, Tvj = 150°C<br>Eoff, Tvj = 150°C<br>32 fe ptt > f eea a PTaTT Te ae| T | |<br>28<br>ee tT Nita<br>24 Pf ft | foeaTF fd | 0,1 Pe Pet tt O FT|<br>BS ca a<br>20 wa 2a PCIEasSee<br>16<br>0,01<br>128 Pt fT } fo) tt pt dd 7PT eeeee ee e e<br>i: 1 2 3 4<br>4 PP PT TT T r τ ii[K/W]: [s]: 0,0114 0,01 0,0627 0,02 T 0,0608 0,05 0,0551 0,1<br>ee PEI Ti l<br>0 0,001<br>0 1 2 3 4 5 6 7 8 9 10 11 0,001 0,01 0,1 1 10<br>RG [ Ω ] t [s]<br>Rin2SLF K IGBT, ass ( RBSOA ) LEG mE RB Fes ( BB)<br>reverse bias safe operating area IGBT,Inverter (RBSOA) forward characteristic of Diode, Inverter (typical)<br>IC =f(V CE) IF =f(V F)<br>VGE rT IBVLR Goff =1.1 Ω ,T vj =150°C<br>400 300<br>IC, Modul Tvj = 25°C<br>IC, Chip 270 Tvj = 125°C<br>350 EJ] e Tvj = 150°C we<br>240<br>300<br>Po Pe o<br>210<br>250<br>180<br>200 150<br>120<br>150<br>90<br>100<br>60 HL<br>50 BERED<br>30<br>7 AREeE<br>[C] a [er]<br>0 0<br>pi [tT}] VA<br>0 200 400 600 800 1000 1200 1400 0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6 1,8 2,0 2,2 2,4<br>VCE [V] VF [V]<br> [K/W]<br>E [mJ]<br>thJC<br>Z<br> [A] [A]<br>IC IF<br>**----- End of picture text -----**<br> 6 **==> picture [66 x 20] intentionally omitted <==** **----- Start of picture text -----**<br> IGBT-模块<br>IGBT-modules<br>**----- End of picture text -----**<br> ## FF150R12RT4 ## **初步数据** **==> picture [485 x 596] intentionally omitted <==** **----- Start of picture text -----**<br> Erec =f(I F) Erec =f(R G)<br>RGon a Ω ,V CE =600V IF = 180A, V CE = 600 V<br>14 Ss 14 SS |<br>Erec, Tvj = 125°C Erec, Tvj = 125°C<br>Erec, Tvj = 150°C Erec, Tvj = 150°C<br>12 12<br>10 10<br>ERR) CREE<br>8 8<br>6 LeeLee 6<br>4 aA 4 PoP Ee<br>2 2<br>0 0<br>0 30 60 90 120 150 180 210 240 270 300 0 1 2 3 4 5 6 7 8 9 10 11<br>IF [A] RG [ Ω ]<br>mAh RE, 2<br>transient thermal impedance Diode, Inverter<br>ZthJC = f (t)<br>1<br>ZthJC : Diode<br>oo o<br>rT TT T T TT<br>Pt<br>He<br>0,1 ST a l<br>Ye ee<br>Pt<br>PT [Ta] eei<br>rT [TT] TTTTee<br>a<br>0,01<br>SST<br>ee<br>Poeee<br>rT TT TT TT<br>A (oi<br>i: 1 2 3 4<br>ri[K/W]: 0,0186 0,1023 0,0992 0,0899<br>PT τ i[s]: 0,01 0,02 T 0,05 0,1 f<br>ANE Fro m<br>0,001<br>0,001 0,01 0,1 1 10<br>t [s]<br>E [mJ] E [mJ]<br> [K/W]<br>thJC<br>Z<br>**----- End of picture text -----**<br> 7 **==> picture [523 x 108] intentionally omitted <==** **----- Start of picture text -----**<br> 技术信息�/�Technical�Information<br>IGBT-模块IGBT-modules FF150R12RT4<br>初步数据<br>Preliminary�Data<br>接线图�/�circuit_diagram_headline<br>**----- End of picture text -----**<br> **==> picture [157 x 13] intentionally omitted <==** **----- Start of picture text -----**<br> 封装尺寸�/�package�outlines<br>**----- End of picture text -----**<br> **==> picture [319 x 25] intentionally omitted <==** **----- Start of picture text -----**<br> prepared�by:�MK date�of�publication:�2013-11-05<br>approved�by:�WR revision:�2.1<br>**----- End of picture text -----**<br> 8 IGBT-模块 IGBT-modules ## FF150R12RT4 ## **初步数据** ## **使用条件和条款** ## 使用条件和条款 产品规格书中的数据是专门为技术人员提供的，您和您的技术部门应该针对您的应用来评估产品及产品的所有参数是否适合 产品规格书中所描述的产品特性是被保证的，任何这种保证严格依照供货协议中所涉及的条件和条款。除此之外，产品和产品的特性没有任何的保证 请注意安装及应用指南中的信息。 如果您有超出规格书所提供的产品信息的要求或者对我们的产品针对的特殊应用有疑虑的话，请联系我们负责你的销售部门（详情查询 我们负责你的销售部门 如果您想将我们的产品用于航天，健康，危及生命或者生命维持等应用，请申明。 请注意，对这类应用我们强烈建议 -执行联合的风险和质量评估 -得到质量协议的结论 保留产品规格书的修改权 9
Updated at April 28, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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