![FF1500R12IE5PBPSA1 — IGBT Module, Dual [Half Bridge], 1.5 kA, 1.7 V, 175 °C, Module](/media/2/2/A/72CD1754CFE60A22.webp)
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FF1500R12IE5PBPSA1
IGBT Module, Dual [Half Bridge], 1.5 kA, 1.7 V, 175 °C, Module
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: INFINEON
- Product type: IGBT Modules
- SVHC: No SVHC (25-Jun-2025)
- Product Range: PrimePACK 3+B
- IGBT Technology: IGBT 5 [Trench/Field Stop]
- IGBT Termination: Stud
- Power Dissipation: -
- IGBT Configuration: Dual [Half Bridge]
- Transistor Mounting: Panel
- DC Collector Current: 1.5kA
- Power Dissipation Pd: -
- Transistor Case Style: Module
- Operating Temperature Max: 175°C
- Junction Temperature Tj Max: 175°C
- Continuous Collector Current: 1.5kA
- Collector Emitter Voltage Max: 1.2kV
- Collector Emitter Voltage V(br)ceo: 1.2kV
- Collector Emitter Saturation Voltage: 1.7V
- Collector Emitter Saturation Voltage Vce(on): 1.7V
| Delivery and price | |
|---|---|
| Units per pack | 1 |
| Price | 768.28 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
## FF1500R12IE5P
VCES = 1200V IC nom = 1500A / ICRM = 3000A
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Datasheet www.infineon.com
2020-06-16
FF1500R12IE5P
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|**IGBT,Wechselrichter/IGBT,Inverter**<br>**HöchstzulässigeWerte/MaximumRatedValues**|**IGBT,Wechselrichter/IGBT,Inverter**<br>**HöchstzulässigeWerte/MaximumRatedValues**||||||
|---|---|---|---|---|---|---|
|Kollektor-Emitter-Sperrspannung<br>Collector-emittervoltage|Tvj= 25°C|VCES|1200|||V|
|Kollektor-Dauergleichstrom<br>ContinuousDCcollectorcurrent|TH= 55°C, Tvj max= 175°C|ICDC|1500|||A|
|PeriodischerKollektor-Spitzenstrom<br>Repetitivepeakcollectorcurrent|tP= 1 ms|ICRM|3000|||A|
|Gate-Emitter-Spitzenspannung<br>Gate-emitterpeakvoltage||VGES|+/-20|||V|
|**CharakteristischeWerte/CharacteristicValues**|||min.|typ.|max.||
|Kollektor-Emitter-Sättigungsspannung<br>Collector-emittersaturationvoltage|IC= 1500 A<br>VGE= 15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 175°C|VCE sat||1,70<br>2,00<br>2,15|2,15<br>2,45<br>2,60|V<br>V<br>V|
|Gate-Schwellenspannung<br>Gatethresholdvoltage|IC= 41,0 mA, VCE= VGE, Tvj= 25°C|VGEth|5,25|5,80|6,35|V|
|Gateladung<br>Gatecharge|VGE= -15 / 15 V, VCE= 600 V|QG||7,15||µC|
|InternerGatewiderstand<br>Internalgateresistor|Tvj= 25°C|RGint||0,6||Ω|
|Eingangskapazität<br>Inputcapacitance|f = 1000 kHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V|Cies||82,0||nF|
|Rückwirkungskapazität<br>Reversetransfercapacitance|f = 1000 kHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V|Cres||3,25||nF|
|Kollektor-Emitter-Reststrom<br>Collector-emittercut-offcurrent|VCE= 1200 V, VGE= 0 V<br>Tvj= 25°C|ICES|||5,0|mA|
|Gate-Emitter-Reststrom<br>Gate-emitterleakagecurrent|VCE= 0 V, VGE= 20 V, Tvj= 25°C|IGES|||400|nA|
|Einschaltverzögerungszeit,induktiveLast<br>Turn-ondelaytime,inductiveload|IC= 1500 A, VCE= 600 V<br>VGE= -15 / 15 V<br>RGon= 0,82Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 175°C|td on||0,26<br>0,28<br>0,28||µs<br>µs<br>µs|
|Anstiegszeit,induktiveLast<br>Risetime,inductiveload|IC= 1500 A, VCE= 600 V<br>VGE= -15 / 15 V<br>RGon= 0,82Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 175°C|tr||0,16<br>0,17<br>0,18||µs<br>µs<br>µs|
|Abschaltverzögerungszeit,induktiveLast<br>Turn-offdelaytime,inductiveload|IC= 1500 A, VCE= 600 V<br>VGE= -15 / 15 V<br>RGoff= 0,82Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 175°C|td off||0,51<br>0,56<br>0,59||µs<br>µs<br>µs|
|Fallzeit,induktiveLast<br>Falltime,inductiveload|IC= 1500 A, VCE= 600 V<br>VGE= -15 / 15 V<br>RGoff= 0,82Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 175°C|tf||0,09<br>0,11<br>0,13||µs<br>µs<br>µs|
|EinschaltverlustenergieproPuls<br>Turn-onenergylossperpulse|IC= 1500 A, VCE= 600 V, Lσ= 30 nH<br>di/dt = 7900 A/µs (Tvj= 175°C)<br>VGE= -15 / 15 V, RGon= 0,82Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 175°C|Eon||120<br>180<br>215||mJ<br>mJ<br>mJ|
|AbschaltverlustenergieproPuls<br>Turn-offenergylossperpulse|IC= 1500 A, VCE= 600 V, Lσ= 30 nH<br>du/dt = 2750 V/µs (Tvj= 175°C)<br>VGE= -15 / 15 V, RGoff= 0,82Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 175°C|Eoff||155<br>195<br>220||mJ<br>mJ<br>mJ|
|Kurzschlußverhalten<br>SCdata|VGE ≤15 V, VCC= 900 V<br>VCEmax= VCES-LsCE·di/dt<br>Tvj= 175°C<br>tP ≤10 µs,|ISC||5600||A|
|Wärmewiderstand,ChipbisKühlkörper<br>Thermalresistance,junctiontoheatsink|proIGBT/perIGBT<br>validwithIFXpre-appliedthermalinterfacematerial|RthJH|||31,2|K/kW|
|TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions||Tvj op|-40||175|°C|
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FF1500R12IE5P
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## **Diode,�Wechselrichter�/�Diode,�Inverter**
## **Höchstzulässige�Werte�/�Maximum�Rated�Values**
|PeriodischeSpitzensperrspannung<br>Repetitivepeakreversevoltage|Tvj= 25°C|VRRM|1200|1200||V|
|---|---|---|---|---|---|---|
|Dauergleichstrom<br>ContinuousDCforwardcurrent||IF|1500|||A|
|PeriodischerSpitzenstrom<br>Repetitivepeakforwardcurrent|tP= 1 ms|IFRM|3000|||A|
|Grenzlastintegral<br>I²t-value|VR= 0 V, tP= 10 ms, Tvj= 125°C<br>VR= 0 V, tP= 10 ms, Tvj= 175°C|I²t|575<br>445|||kA²s<br>kA²s|
|**CharakteristischeWerte/CharacteristicValues**|||min.|typ.|max.||
|Durchlassspannung<br>Forwardvoltage|IF= 1500 A, VGE= 0 V<br>IF= 1500 A, VGE= 0 V<br>IF= 1500 A, VGE= 0 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 175°C|VF||1,95<br>1,85<br>1,80|2,45<br>2,30<br>2,25|V<br>V<br>V|
|Rückstromspitze<br>Peakreverserecoverycurrent|IF= 1500 A, - diF/dt = 7900 A/µs (Tvj=175°C)<br>VR= 600 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 175°C|IRM||745<br>1000<br>1150||A<br>A<br>A|
|Sperrverzögerungsladung<br>Recoveredcharge|IF= 1500 A, - diF/dt = 7900 A/µs (Tvj=175°C)<br>VR= 600 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 175°C|Qr||175<br>300<br>365||µC<br>µC<br>µC|
|AbschaltenergieproPuls<br>Reverserecoveryenergy|IF= 1500 A, - diF/dt = 7900 A/µs (Tvj=175°C)<br>VR= 600 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 175°C|Erec||82,0<br>135<br>160||mJ<br>mJ<br>mJ|
|Wärmewiderstand,ChipbisKühlkörper<br>Thermalresistance,junctiontoheatsink|proDiode/perdiode<br>validwithIFXpre-appliedthermalinterfacematerial|RthJH|||47,1|K/kW|
|TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions||Tvj op|-40||175|°C|
## **NTC-Widerstand�/�NTC-Thermistor**
## **Charakteristische�Werte�/�Characteristic�Values**
|**NTC-Widerstand/NTC-Thermistor**<br>|**NTC-Widerstand/NTC-Thermistor**<br>||||||
|---|---|---|---|---|---|---|
|**CharakteristischeWerte/CharacteristicValues**|||min.|typ.|max.||
|Nennwiderstand<br>Ratedresistance|TNTC= 25°C|R25||5,00||kΩ|
|AbweichungvonR100<br>DeviationofR100|TNTC= 100°C, R100= 493Ω|∆R/R|-5||5|%|
|Verlustleistung<br>Powerdissipation|TNTC= 25°C|P25|||20,0|mW|
|B-Wert<br>B-value|R2= R25exp [B25/50(1/T2- 1/(298,15 K))]|B25/50||3375||K|
|B-Wert<br>B-value|R2= R25exp [B25/80(1/T2- 1/(298,15 K))]|B25/80||3411||K|
|B-Wert<br>B-value|R2= R25exp [B25/100(1/T2- 1/(298,15 K))]|B25/100||3433||K|
Angaben�gemäß�gültiger�Application�Note. Specification�according�to�the�valid�application�note.
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## **Modul�/�Module**
|**Modul/Module**|||||||
|---|---|---|---|---|---|---|
|Isolations-Prüfspannung<br>Isolationtestvoltage|RMS, f = 50 Hz, t = 1 min.|VISOL|4,0<br>|||kV|
|MaterialModulgrundplatte<br>Materialofmodulebaseplate|||Cu||||
|InnereIsolation<br>Internalisolation|Basisisolierung(Schutzklasse1,EN61140)<br>basicinsulation(class1,IEC61140)||Al2O3||||
|Kriechstrecke<br>Creepagedistance|Kontakt-Kühlkörper/terminaltoheatsink<br>Kontakt-Kontakt/terminaltoterminal||36,0<br>28,0<br>|||mm|
|Luftstrecke<br>Clearance|Kontakt-Kühlkörper/terminaltoheatsink<br>Kontakt-Kontakt/terminaltoterminal||21,0<br>19,0<br>|||mm|
|VergleichszahlderKriechwegbildung<br>Comperativetrackingindex||CTI||> 400|||
||||min.|typ.|max.||
|Modulstreuinduktivität<br>Strayinductancemodule||LsCE||10||nH|
|Modulleitungswiderstand,Anschlüsse-<br>Chip<br>Moduleleadresistance,terminals-chip|TH=25°C,proSchalter/perswitch|RCC'+EE'<br>RAA'+CC'||0,10<br>0,09||mΩ|
|Lagertemperatur<br>Storagetemperature||Tstg|-40||150|°C|
|Höchstzulässige<br>Bodenplattenbetriebstemperatur<br>Maximumbaseplateoperationtemperature||TBPmax|||150|°C|
|Anzugsdrehmomentf.Modulmontage<br>Mountingtorqueformodulmounting|SchraubeM5-Montagegem.gültigerApplikationsschrift<br>ScrewM5-Mountingaccordingtovalidapplicationnote|M|3,00||6,00|Nm|
|Anzugsdrehmomentf.elektr.Anschlüsse<br>Terminalconnectiontorque|SchraubeM4-Montagegem.gültigerApplikationsschrift<br>ScrewM4-Mountingaccordingtovalidapplicationnote<br>SchraubeM8-Montagegem.gültigerApplikationsschrift<br>ScrewM8-Mountingaccordingtovalidapplicationnote|M|1,8<br>8,0|-<br>-|2,1<br>10|Nm<br>Nm|
|Gewicht<br>Weight||G||1400||g|
Lagerung und Transport von Modulen mit TIM: siehe AN2012-07 Storage and shipment of modules with TIM: see AN2012-07
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Datasheet
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**Ausgangskennlinie�IGBT,Wechselrichter�(typisch) output�characteristic�IGBT,Inverter�(typical)** IC�=�f�(VCE) VGE�=�15�V
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**----- Start of picture text -----**<br>
3000<br>Tvj = 25°C<br>Tvj = 125°C<br>2700 T vj = 175°C<br>2400<br>2100<br>1800<br>1500<br>1200<br>900<br>600<br>300<br>0<br>0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5<br>VCE [V]<br> [A]<br>IC<br>**----- End of picture text -----**<br>
**Übertragungscharakteristik�IGBT,Wechselrichter�(typisch) transfer�characteristic�IGBT,Inverter�(typical)** IC�=�f�(VGE) VCE�=�20�V
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**----- Start of picture text -----**<br>
3000<br>Tvj = 25°C<br>Tvj = 125°C<br>2700 T vj = 175°C<br>2400<br>2100<br>1800<br>1500<br>1200<br>900<br>600<br>300<br>0<br>5 6 7 8 9 10 11 12 13<br>VGE [V]<br> [A]<br>IC<br>**----- End of picture text -----**<br>
**Ausgangskennlinienfeld�IGBT,Wechselrichter�(typisch) output�characteristic�IGBT,Inverter�(typical)** IC�=�f�(VCE) Tvj�=�175°C
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**----- Start of picture text -----**<br>
3000<br>VGE = 20V<br>VGE = 15V<br>2700 V GE = 12V<br>VGE = 10V<br>VGE = 9V<br>2400 V GE = 8V<br>2100<br>1800<br>1500<br>1200<br>900<br>600<br>300<br>0<br>0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0 5,5 6,0<br>VCE [V]<br> [A]<br>IC<br>**----- End of picture text -----**<br>
## **Schaltverluste�IGBT,Wechselrichter�(typisch) switching�losses�IGBT,Inverter�(typical)** Eon�=�f�(IC),�Eoff�=�f�(IC)
VGE�=�±15�V,�RGon�=�0.82� Ω ,�RGoff�=�0.82� Ω ,�VCE�=�600�V
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**----- Start of picture text -----**<br>
700<br>Eon, Tvj = 125°C<br>Eon, Tvj = 175°C<br>600 EEoff off , T, Tvj vj = 125°C = 175°C<br>500<br>400<br>300<br>200<br>100<br>0<br>0 300 600 900 1200 1500 1800 2100 2400 2700 3000<br>IC [A]<br>E [mJ]<br>**----- End of picture text -----**<br>
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**----- Start of picture text -----**<br>
Eon =f(R),E G off =f(R G) ZthJH =f (t)<br>VGE =+15V,1 C =1500A,V CE =600V<br>1400 100<br>Eon, Tvj = 125°C ZthJH : IGBT<br>1300 E on , T vj = 175°C<br>1200 EEoff off , T, Tvj vj = 125°C = 175°C<br>1100 ES= J fereestiSHH etmcet ft oeetectilEH eee<br>1000<br>10<br>900 la Pta<br>Po PrA<br>800<br>ne<br>700<br>7 Mi<br>600<br>500<br>1<br>400<br>ee SS<br>300<br>200 i: 1 2 3 4<br>ri[K/kW]: 1,42 6,68 14,3 8,77<br>100 τ i[s]: 0,0031 0,0363 0,0995 0,522<br>fonSEES = EE TT<br>0 0,1<br>0,0 1,0 2,0 3,0 4,0 5,0 6,0 7,0 8,0 0,001 0,01 0,1 1 10<br>RG [ Ω ] t [s]<br> [K/kW]<br>E [mJ]<br>thJH<br>Z<br>**----- End of picture text -----**<br>
## **(RBSOA)**
> VGE =f(Q G) ICC = 1500A, TA, T T vj = 25°C
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**----- Start of picture text -----**<br>
IC =f(V CE) ICC = 1500A, TA, T T vj = 25°C<br>VGE =415V,R Goff =082 Ω ,T vj =175°C<br>3600 15<br>IC, Modul VCC = 600V<br>IC, Chip<br>12<br>3000<br>| 9 == |<br>6<br>2400 ! Pt TAL PE |<br>3<br>1800 0<br>-3<br>1200<br>-6<br>-9<br>600<br>-12<br>0 -15<br>0 200 400 600 800 1000 1200 1400 0 1 2 3 4 5 6 7 8<br>VCE [V] QG [µC]<br> [V]<br> [A]<br>IC VGE<br>**----- End of picture text -----**<br>
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**----- Start of picture text -----**<br>
IF =f(V F) Erec =fi(l F)<br>RGon =0.82 Ω ,V CE =600V<br>3000 240<br>2700 TT T vjvjvj = 25°C = 125°C = 175°C iH t/ 220 E E rec rec , T , T vj vj = 125°C = 175 ° C oo a“<br>i] 200 “<br>2400 iH a<br>/!/ 180<br>// /<br>2100<br>/ 160 y<br>// 7<br>1800 ‘ 140 a4<br>1500 120<br>‘<br>1200 100 7<br>/ )<br>80 / f<br>900 /<br>/<br>60 7<br>/<br>600<br>40 y<br>/<br>300<br>20<br>0 0<br>0,0 0,5 1,0 1,5 2,0 2,5 0 300 600 900 1200 1500 1800 2100 2400 2700 3000<br>VF [V] IF [A]<br> [A]<br>IF E [mJ]<br>**----- End of picture text -----**<br>
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**----- Start of picture text -----**<br>
Erec =f(R G) ZthJH =f (t)<br>IF =1500A,V CE =600V<br>180 100<br>Erec, Tvj = 125°C ZthJH : Diode<br>Erec, Tvj = 175°C<br>160<br>\\ PETA TE| e e<br>140 \ PN<br>\ UN Ye IE ETT<br>120 \ \<br>100 N<br>10<br>“N /{<br>80<br>60<br>40<br>i: 1 2 3 4<br>20 ri[K/kW]: 2,92 16,7 21,3 6,17<br>τ i[s]: 0,0013 0,0282 0,142 1,17<br>0 1<br>0,0 1,0 2,0 3,0 4,0 5,0 6,0 7,0 8,0 0,001 0,01 0,1 1 10<br>RG [ Ω ] t [s]<br> [K/kW]<br>E [mJ]<br>thJH<br>Z<br>**----- End of picture text -----**<br>
Datasheet
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FF1500R12IE5P
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**NTC-Widerstand-Temperaturkennlinie�(typisch) NTC-Thermistor-temperature�characteristic�(typical)** R�=�f�(T)
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**----- Start of picture text -----**<br>
100000<br>Rtyp<br>10000<br>1000<br>100<br>10<br>0 25 50 75 100 125 150 175<br>TNTC [°C]<br>] Ω<br>R[<br>**----- End of picture text -----**<br>
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FF1500R12IE5P
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## **Schaltplan�/�Circuit�diagram**
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## **Gehäuseabmessungen�/�Package�outlines**
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**----- Start of picture text -----**<br>
C<br>screwing depth (247) m 0,35 A D E 26<br>max. 8mm 8x 8x (M4) 3 c0,1<br>8x max. (2)<br>E<br>36,5 recommended design height<br>m q0,35 A B C m 1,2 A D E<br>8x<br>2,50,50 Y X<br>screwing depthmax. 16mm 8x 8x max. (3)<br>36,5 recommended design heightm 0,8 A D E<br>14x q5,5 c0,1 m q0,5 A D E 8x<br>B 14x 38,25<br>D<br>117 8x (M8) m q1,8 A D E<br>m q0,35 A B C 8x<br>M 8x<br>A m q0,4 CZ A 8x q5<br>250 c1 ~ 8x<br>36,5<br>18,2 K<br>Y<br>0 X H ' K<br>g 0,2 A M-M<br>H<br>16,7<br>restricted area for Thermal Interface Material<br>36,5<br>232<br>Dimension in mounted condition ISO 10579<br>Terminal heights measurement at the end of bending radius<br>60 c,<br>(86) 89<br>36,5<br>5,5)<br>q( 117 111 103 93 92 78 59 53 41 39 25 14 4 0 33 39 70 78 107 117<br>124,7 103 92 53 25 14 0<br>60<br>**----- End of picture text -----**<br>
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Datasheet
## **Trademarks**
## **WARNHINWEIS**
## **WARNINGS**
Updated at April 28, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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