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FF1400R17IP4BOSA1
IGBT Module, Dual, 1.4 kA, 1.75 V, 9.55 kW, 150 °C, Module
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: INFINEON
- Product type: IGBT Modules
- Transistor Polarity:N Channel; DC Collector Current:1.4kA; Collector Emitter Saturation Voltage Vce(on):1.75V; Power Dissipation Pd:9.55kW; Collector Emitter Voltage V(br)ceo:1.7kV; Tran
- SVHC: No SVHC (25-Jun-2025)
- Product Range: PrimePACK 3
- IGBT Technology: IGBT 4 [Trench/Field Stop]
- IGBT Termination: Stud
- Power Dissipation: 9.55kW
- IGBT Configuration: Dual
- Transistor Mounting: Panel
- Transistor Polarity: N Channel
- DC Collector Current: 1.4kA
- Power Dissipation Pd: 9.55kW
- Transistor Case Style: Module
- Operating Temperature Max: 150°C
- Junction Temperature Tj Max: 150°C
- Continuous Collector Current: 1.4kA
- Collector Emitter Voltage Max: 1.7kV
- Collector Emitter Voltage V(br)ceo: 1.7kV
- Collector Emitter Saturation Voltage: 1.75V
- Collector Emitter Saturation Voltage Vce(on): 1.75V
| Delivery and price | |
|---|---|
| Units per pack | 1 |
| Price | 715.87 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
IGBT-模块 IGBT-modules
## FF1400R17IP4
VCES = 1700V IC nom = 1400A / ICRM = 2800A
## **典型应用**
- 三电平应用
- 辅助逆变器
- • 大功率变流器
- • 电机传动
- 风力发电机
- 3-Level-Applications
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-
-
## **电气特性**
-
- 高直流电压稳定性
- • 高电流密度 • 低开关损耗
- CEsat
- T
-
-
-
-
- CEsat
- • T
## **机械特性**
-
- 高爬电距离和电气间隙
- 高功率循环和温度循环能力
- 高功率密度
- • 铜基板 • 标封装
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1
技术信息�/�Technical�Information IGBT-模块IGBT-modules FF1400R17IP4
**==> picture [86 x 38] intentionally omitted <==**
## **初步数据 Preliminary�Data**
## **IGBT,�逆变器�/�IGBT,Inverter 最大额定值�/�Maximum�Rated�Values**
|技术信息/TechnicalInformation<br>FF1400R17IP4<br>IGBT-模块<br>IGBT-modules||
|---|---|
|preparedby:TA<br>approvedby:PL<br>dateofpublication:2013-11-05<br>revision:2.4<br>**初步数据**<br>**PreliminaryData**<br>**IGBT,逆变器/IGBT,Inverter**<br>**最大额定值/MaximumRatedValues**<br>集电极－发射极电压<br>Collector-emittervoltage<br>Tvj= 25°C<br>VCES<br>1700<br>V<br>连续集电极直流电流<br>ContinuousDCcollectorcurrent<br>TC= 100°C, Tvj max= 175°C<br>IC nom<br>1400<br>A<br>集电极重复峰值电流<br>Repetitivepeakcollectorcurrent<br>tP= 1 ms<br>ICRM<br>2800<br>A<br>总功率损耗<br>Totalpowerdissipation<br>TC= 25°C, Tvj max= 175°C<br>Ptot<br>9,55<br>kW<br>栅极－发射极峰值电压<br>Gate-emitterpeakvoltage<br>VGES<br>+/-20<br>V<br>**特征值/CharacteristicValues**<br>min.<br>typ.<br>max.<br>集电极－发射极饱和电压<br>Collector-emittersaturationvoltage<br>IC= 1400 A, VGE= 15 V<br>IC= 1400 A, VGE= 15 V<br>IC= 1400 A, VGE= 15 V<br>VCE sat<br>1,75<br>2,10<br>2,20<br>2,20<br>V<br>V<br>V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>栅极阈值电压<br>Gatethresholdvoltage<br>IC= 50,0 mA, VCE= VGE, Tvj= 25°C<br>VGEth<br>5,2<br>5,8<br>6,4<br>V<br>栅极电荷<br>Gatecharge<br>VGE= -15 V ... +15 V<br>QG<br>13,5<br>µC<br>内部栅极电阻<br>Internalgateresistor<br>Tvj= 25°C<br>RGint<br>1,6<br>Ω<br>输入电容<br>Inputcapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cies<br>110<br>nF<br>反向传输电容<br>Reversetransfercapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cres<br>3,60<br>nF<br>集电极-发射极截止电流<br>Collector-emittercut-offcurrent<br>VCE= 1700 V, VGE= 0 V, Tvj= 25°C<br>ICES<br>5,0<br>mA<br>栅极-发射极漏电流<br>Gate-emitterleakagecurrent<br>VCE= 0 V, VGE= 20 V, Tvj= 25°C<br>IGES<br>400<br>nA<br>开通延迟时间(电感负载)<br>Turn-ondelaytime,inductiveload<br>IC= 1400 A, VCE= 900 V<br>VGE= ±15 V<br>RGon= 0,47Ω<br>td on<br>0,84<br>0,88<br>0,89<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>上升时间(电感负载)<br>Risetime,inductiveload<br>IC= 1400 A, VCE= 900 V<br>VGE= ±15 V<br>RGon= 0,47Ω<br>tr<br>0,13<br>0,14<br>0,14<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>关断延迟时间(电感负载)<br>Turn-offdelaytime,inductiveload<br>IC= 1400 A, VCE= 900 V<br>VGE= ±15 V<br>RGoff= 0,68Ω<br>td off<br>1,15<br>1,35<br>1,40<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>下降时间(电感负载)<br>Falltime,inductiveload<br>IC= 1400 A, VCE= 900 V<br>VGE= ±15 V<br>RGoff= 0,68Ω<br>tf<br>0,50<br>0,77<br>0,79<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>开通损耗能量(每脉冲)<br>Turn-onenergylossperpulse<br>IC= 1400 A, VCE= 900 V, LS= 30 nH<br>VGE= ±15 V, di/dt = 9500 A/µs (Tvj= 150°C)<br>RGon= 0,47Ω<br>Eon<br>340<br>500<br>560<br>mJ<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>关断损耗能量(每脉冲）<br>Turn-offenergylossperpulse<br>IC= 1400 A, VCE= 900 V, LS= 30 nH<br>VGE= ±15 V, du/dt = 2500 V/µs (Tvj= 150°C)<br>RGoff= 0,68Ω<br>Eoff<br>440<br>625<br>650<br>mJ<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>短路数据<br>SCdata<br>VGE ≤15 V, VCC= 1000 V<br>VCEmax= VCES-LsCE·di/dt<br>ISC<br>5600<br>A<br>Tvj= 150°C<br>tP ≤10 µs,<br>结－外壳热阻<br>Thermalresistance,junctiontocase<br>每个IGBT/perIGBT<br>RthJC<br>15,5 K/kW<br>外壳－散热器热阻<br>Thermalresistance,casetoheatsink<br>每个IGBT/perIGBT<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)<br>RthCH<br>11,5<br>K/kW<br>在开关状态下温度<br>Temperatureunderswitchingconditions<br>Tvj op<br>-40<br>150<br>°C||
2
技术信息�/�Technical�Information IGBT-模块IGBT-modules FF1400R17IP4
**==> picture [86 x 38] intentionally omitted <==**
**初步数据 Preliminary�Data**
## **二极管,逆变器�/�Diode,�Inverter 最大额定值�/�Maximum�Rated�Values**
|反向重复峰值电压<br>Repetitivepeakreversevoltage|Tvj= 25°C|VRRM|1700|1700||V|
|---|---|---|---|---|---|---|
|连续正向直流电流<br>ContinuousDCforwardcurrent||IF|1400|||A|
|正向重复峰值电流<br>Repetitivepeakforwardcurrent|tP= 1 ms|IFRM|2800|||A|
|I2t-值<br>I²t-value|VR= 0 V, tP= 10 ms, Tvj= 125°C|I²t|200|||kA²s|
|最大损耗功率<br>Maximumpowerdissipation|Tvj= 125°C|PRQM|1400|||kW|
|**特征值/CharacteristicValues**|||min.|typ.|max.||
|正向电压<br>Forwardvoltage|IF= 1400 A, VGE= 0 V<br>IF= 1400 A, VGE= 0 V<br>IF= 1400 A, VGE= 0 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|VF||1,75<br>1,80<br>1,80|2,45|V<br>V<br>V|
|反向恢复峰值电流<br>Peakreverserecoverycurrent|IF= 1400 A, - diF/dt = 10000 A/µs (Tvj=150°C)<br>VR= 900 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|IRM||1500<br>1650<br>1700||A<br>A<br>A|
|恢复电荷<br>Recoveredcharge|IF= 1400 A, - diF/dt = 10000 A/µs (Tvj=150°C)<br>VR= 900 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Qr||345<br>585<br>650||µC<br>µC<br>µC|
|反向恢复损耗（每脉冲）<br>Reverserecoveryenergy|IF= 1400 A, - diF/dt = 10000 A/µs (Tvj=150°C)<br>VR= 900 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Erec||195<br>345<br>385||mJ<br>mJ<br>mJ|
|结－外壳热阻<br>Thermalresistance,junctiontocase|每个二极管/perdiode|RthJC|||32,5|K/kW|
|外壳－散热器热阻<br>Thermalresistance,casetoheatsink|每个二极管/perdiode<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)|RthCH||11,5||K/kW|
|在开关状态下温度<br>Temperatureunderswitchingconditions||Tvj op|-40||150|°C|
## **负温度系数热敏电阻�/�NTC-Thermistor 特征值�/�Characteristic�Values**
|**负温度系数热敏电阻/NTC-Thermistor**<br>|**负温度系数热敏电阻/NTC-Thermistor**<br>||||||
|---|---|---|---|---|---|---|
|**特征值/CharacteristicValues**|||min.<br>typ.||max.||
|额定电阻值<br>Ratedresistance|TC= 25°C|R25||5,00||kΩ|
|R100偏差<br>DeviationofR100|TC= 100°C, R100= 493Ω|∆R/R|-5||5|%|
|耗散功率<br>Powerdissipation|TC= 25°C|P25|||20,0|mW|
|B-值<br>B-value|R2= R25exp [B25/50(1/T2- 1/(298,15 K))]|B25/50||3375||K|
|B-值<br>B-value|R2= R25exp [B25/80(1/T2- 1/(298,15 K))]|B25/80||3411||K|
|B-值<br>B-value|R2= R25exp [B25/100(1/T2- 1/(298,15 K))]|B25/100||3433||K|
|根据应用手册标定<br>Specificationaccordingtothevalidapplicationnote.|||||||
prepared�by:�TA date�of�publication:�2013-11-05 approved�by:�PL revision:�2.4
3
IGBT-模块 IGBT-modules
## FF1400R17IP4
## **初步数据**
|#R_<br>| Module|||||||
|---|---|---|---|---|---|---|
|绝缘测试电压<br>模块基板材料<br>内部绝缘<br>~~Isolation test voltage~~<br>~~Material of module baseplate ~~<br>Internal isolation|RMS, f = 50 Hz, t = 1 min.<br>~~ee ~~<br> ~~ee ~~<br>BAM (class 1, IEC 61140)<br>basic insulation (class 1, IEC 61140)|VISOL<br> ~~ee~~<br> ~~ee~~||4,0<br>Cu<br>Al2O3||kV|
|爬电距离<br>Creepage distance|im-BEA /terminaltoheatsink<br>imF-Ym /terminal to terminal|||33,0<br>33,0||mm|
|电气间隙<br>Clearance<br>相对电痕指数<br>~~Comperative tracking index~~|im-BEA /terminal toheatsink<br>im F-Ym / terminal to terminal<br>~~ee~~|CTI<br>~~ee~~|min.|19,0<br>19,0<br>> 400<br>typ.<br>max.<br>~~ee~~||mm|
|杂散电感,模块||LsCE||10||nH|
|模块引线电阻,端子-芯片<br>储存温度<br>模块安装的安装扭距<br>terminals ~~- chip~~<br>~~Storage temperature~~<br>Mounting torque for modul mounting|TC<br>=<br>°<br>HN<br>ij<br>~~25°C, STFA/ per switch~~<br>~~ee~~<br>**S**eeM5ARSEAR VAY OyA AET<br>crew M5<br>- Mounting according to valid application note|RCC'+EE'<br>0,20<br>Tstg<br>-40<br>150<br>M<br>3,00<br>-<br>6,00<br>~~tt ff~~||||mΩ<br>°C<br>Nm|
|端子联接扭距<br>Terminal connection torque|BeeM4AHEAD AVAY OV EAETR<br>Screw M4<br>- Mounting according to valid application note<br>$e MS ARSEAR AVAY bv AEA ETT<br>Screw M8<br>- Mounting according to valid application note|M|1,8<br>8,0|-<br>-|2,1<br>10|Nm<br>Nm|
|重量<br>Weight||G||1200||g|
4
IGBT-模块 IGBT-modules
## FF1400R17IP4
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初步数据<br>**----- End of picture text -----**<br>
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IC CE) IC CE)<br>VGE BV Tvj =80°C<br>2800 2800<br>2600 f TTvjvj = 25°C = 125°C f 2600 [p VVGEGE = 20V = 15V e ee<br>2400 e e Tvj = 150°C ee ay A oa 2400 | VVGEGE = 12V = 10V<br>2200 en e e ee 2200 I VGE = 9V Pi, y e y<br>VGE = 8V<br>2000 e e ee 2000 [E e | e<br>1800 eee ee eee 1800 PL tL A er<br>1600 P| | Eee 1600 P| | | ee<br>1400 Pt TT fee 1400 Pt tT tT eee<br>1200 ee ee 1200 Po | dL fe<br>1000 Po; dE 1000 P| | PA EP |<br>800 ee ee 800 P| | ee |<br>600 Pf | fe 600 PL peer]<br>400 Pot tft 400 P| lee |<br>200 200<br>0 PF tL Z| 0 POA<br>0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0<br>VCE [V] VCE [V]<br>ME IGBT, HAS (BB) FFRIAE IGBT, HBA ( BB)<br>transfer characteristic IGBT,Inverter (typical) switching losses IGBT, Inverter (typical)<br>IC GE) Eon C off C)<br>VCE : OO Vv VGE eV, R- Gon "¢ 0.47 Ω ,R Goff =0.68 Ω ,V CE =900V<br>2800 1200<br>2600 fH TTvjvj = 25°C = 125°C LE 1100 O EEonon, T, Tvjvj = 125°C = 150°C Y<br>2400 Tvj = 150°C Eoff, Tvj = 125°C<br>Ee 1000 EB Eoff, Tvj = 150°C ee<br>2200<br>2<br>900<br>e e<br>2000<br>800<br>1800<br>1600 Fa 7 700 A<br>1400 es ee 600 ee ee 2)<br>1200 ee 500 PL ae<br>1000<br>ee ee 400 PL Uk ey | |<br>ee<br>800<br>300<br>600<br>2<br>200<br>400<br>200 ee 100 PA<br>0 Pe t | 0 eee<br>5 6 7 8 9 10 11 12 0 400 800 1200 1600 2000 2400 2800<br>VGE [V] IC [A]<br> [A] [A]<br>IC IC<br> [A]<br>IC E [mJ]<br>**----- End of picture text -----**<br>
5
IGBT-模块 IGBT-modules
## FF1400R17IP4
## **初步数据**
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Eon =f(R),E G off =f(R G) ZthJC =f (t)<br>VGE =+15V,1 C =1400A,V CE =900V<br>1700 100<br>1600 Eon, Tvj = 125°C ZthJC : IGBT<br>Eon, Tvj = 150°C<br>1500 Eoff, Tvj = 125°C ae ZO rt<br>1400 I Eoff, Tvj = 150°C ie Ce<br>1300 Da ce eeeaea | a a en<br>1200<br>1100 a ee ee eee 10 EY| THN | A ti |i<br>oe: ooo PEEH H tH<br>1000900800700 P|esrT AZT)| ory aeLe = res A PAI H<br>600<br>1<br>500 ic PE20a eee| HH|| |EH<br>a eee<br>400<br>300 SSCS<br>i: 1 2 3 4<br>200 ri[K/kW]: 1 11,3 2,2 1<br>fF {| | fj {| | | | ff} | PAI| t τ i[s]: 0,001 e 0,03 0,1 1<br>100<br>0 eeP| | | TE EE 0,1 alil<br>0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0 0,001 0,01 0,1 1 10<br>RG [ Ω ] t [s]<br>RieZS LEK IGBT, ees ( RBSOA) Fa mESst REGS ( BB)<br>reverse bias safe operating area IGBT,Inverter (RBSOA) forward characteristic of Diode, Inverter (typical)<br>IC =f(V CE) IF =f(V F)<br>VGE ee V,R Goff +=068 Ω ,T vj =150°C<br>3200 2800<br>IICC, Modul, Chip 2600 TTvjvj = 25°C = 125°C<br>E_J<br>2800 — |) ll | | 2400 |I Tvj = 150°C eaP|<br>2200<br>2400 PPiee ey) Fe edE |<br>2000 r eeeee<br>1800<br>2000<br>1600<br>1600 1400<br>1200<br>1200<br>1000<br>800<br>800<br>pit Eg<br>600<br>400<br>400<br>200 |<br>ee ee<br>0 0<br>0 200 400 600 800 1000 1200 1400 1600 1800 0,0 0,5 1,0 1,5 2,0 2,5 3,0<br>VCE [V] VF [V]<br> [K/kW]<br>E [mJ]<br>thJC<br>Z<br> [A] [A]<br>IC IF<br>**----- End of picture text -----**<br>
6
IGBT-模块 IGBT-modules
## FF1400R17IP4
## **初步数据**
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Erec =f(I F) Erec =f(R G)<br>RGon ve Ω ,V CE =900V IF = MOOA,V CE = 900 V<br>500 500<br>Erec, Tvj = 125°C Erec, Tvj = 125°C<br>450 FEL Erec, Tvj = 150°C o ee 450 I Erec, Tvj = 150°C<br>400 TT i ole poe 400 PT T<br>350 350<br>pt | ee PSE TE| EE|<br>300 300<br>eva PN tT<br>250 250<br>ava | pt tt<br>200 200<br>150 150<br>100 100<br>50 50<br>0 0<br>0 400 800 1200 1600 2000 2400 2800 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0<br>IF [A] RG [ Ω ]<br>RAAB RE ees STK —MB, LEE (SOA)<br>transient thermal impedance Diode, Inverter safe operation area Diode, Inverter (SOA)<br>ZthJC =f(t0 IR =f(V R)<br>Tvj = S0°C<br>100 3200<br>[Soo —<br>ZthJC : Diode IR, Modul<br>PTIePorn HS (ttt e ETE C I TTTTT eo elL 28002400 PT =nTd TMT Py ae yd<br>a a a (I<br>CUNT UNA 2000 «EN\<br>10 1600<br>eaee ee el<br>SSi EEee ee 1200 ry TY INGOT)N<br>el NO<br>eroITT 800 PTT><br>LLM [ETI] dt Ty ASK<br>TH E cmc i: 1 2 3 4 PY<br>ri[K/kW]: 2,168 2,763 25,89 1,774 400<br>τ i[s]: 0,000661 0,00685 0,0417 2,07<br>1 0<br>0,001 0,01 0,1 1 10 0 200 400 600 800 1000 1200 1400 1600 1800<br>t [s] VR [V]<br>E [mJ] E [mJ]<br> [K/kW]thJC [A]IR<br>Z<br>**----- End of picture text -----**<br>
7
IGBT-模块 IGBT-modules
## FF1400R17IP4
## **初步数据**
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100000<br>Rtyp<br>H— = (| —<br>Ras ce<br>e e<br>e a e ssee<br>10000 | | |<br>nt [i] ee ee<br>———<br>ER Ne es es es es es<br>a Ne eses<br>P|NNee<br>pp Nf<br>1000 ERNE<br>————a<br>poNN<br>sea es<br>a ee eee<br>100<br>0 20 40 60 80 100 120 140 160<br>TC [°C]<br>] Ω<br>R[<br>**----- End of picture text -----**<br>
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技术信息�/�Technical�Information IGBT-模块IGBT-modules FF1400R17IP4
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接线图�/�circuit_diagram_headline<br>**----- End of picture text -----**<br>
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## **初步数据 Preliminary�Data**
## **封装尺寸�/�package�outlines**
prepared�by:�TA date�of�publication:�2013-11-05 approved�by:�PL revision:�2.4
9
IGBT-模块 IGBT-modules
## FF1400R17IP4
## **初步数据**
## **使用条件和条款**
## 使用条件和条款
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Updated at April 28, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
About Novapart
Novapart is a B2B electronic component broker specialising in stock shortages and cost reduction. We source hard-to-find parts and identify compliant alternatives across a catalogue of 410,000+ components from 500+ manufacturers.
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When a component is unavailable, discontinued or has an unacceptable lead time, we tap into our network of vetted European and Asian distributors to source what you need — without compromising on quality or traceability.
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We identify pin-to-pin, electrically equivalent substitutes that meet the same certifications (RoHS, AEC-Q100, REACH) as your original specification — validated against datasheets, not just part numbers. Often at a lower cost.
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