Image not available
Illustrative purposes only
FF1400R12IP4BOSA1
IGBT Module, Dual, 1.4 kA, 1.75 V, 7.65 kW, 150 °C, Module
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: INFINEON
- Product type: IGBT Modules
- Transistor Polarity:N Channel; DC Collector Current:1.4kA; Collector Emitter Saturation Voltage Vce(on):1.75V; Power Dissipation Pd:7.65kW; Collector Emitter Voltage V(br)ceo:1.2kV; Tran
- SVHC: No SVHC (25-Jun-2025)
- Product Range: PrimePACK 3
- IGBT Technology: IGBT 4 [Trench/Field Stop]
- IGBT Termination: Stud
- Power Dissipation: 7.65kW
- IGBT Configuration: Dual
- Transistor Mounting: Panel
- Transistor Polarity: N Channel
- DC Collector Current: 1.4kA
- Power Dissipation Pd: 7.65kW
- Transistor Case Style: Module
- Operating Temperature Max: 150°C
- Junction Temperature Tj Max: 150°C
- Continuous Collector Current: 1.4kA
- Collector Emitter Voltage Max: 1.2kV
- Collector Emitter Voltage V(br)ceo: 1.2kV
- Collector Emitter Saturation Voltage: 1.75V
- Collector Emitter Saturation Voltage Vce(on): 1.75V
| Delivery and price | |
|---|---|
| Units per pack | 1 |
| Price | 592.7 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
IGBT-Module IGBT-modules
## FF1400R12IP4
VCES = 1200V IC nom = 1400A / ICRM = 2800A
- Hilfsumrichter
- Hochleistungsumrichter
- • Motorantriebe • Traktionsumrichter
- USV-Systeme
- Windgeneratoren
-
-
-
-
-
-
-
-
- Hohe Kurzschlussrobustheit, selbstlimitierender Kurzschlussstrom
- • VCEsat mit • Niedriges V CEsat
-
-
• High Short Circuit Capability, Self Limiting Short
-
- VCEsat with
- • Low V CEsat
-
-
-
-
-
-
-
-
- •
-
1
> IGBT-ModuleIGBT-modules FF1400R12IP4
## Technische�Information�/�Technical�Information
**==> picture [86 x 38] intentionally omitted <==**
## **Vorläufige�Daten Preliminary�Data**
**IGBT,Wechselrichter�/�IGBT,Inverter Höchstzulässige�Werte�/�Maximum�Rated�Values**
|TechnischeInformation/TechnicalInformation<br>FF1400R12IP4<br>IGBT-Module<br>IGBT-modules||
|---|---|
|preparedby:AC<br>approvedby:MS<br>dateofpublication:2013-11-05<br>revision:2.4<br>**VorläufigeDaten**<br>**PreliminaryData**<br>**IGBT,Wechselrichter/IGBT,Inverter**<br>**HöchstzulässigeWerte/MaximumRatedValues**<br>Kollektor-Emitter-Sperrspannung<br>Collector-emittervoltage<br>Tvj= 25°C<br>VCES<br>1200<br>V<br>Kollektor-Dauergleichstrom<br>ContinuousDCcollectorcurrent<br>TC= 100°C, Tvj max= 175°C<br>IC nom<br>1400<br>A<br>PeriodischerKollektor-Spitzenstrom<br>Repetitivepeakcollectorcurrent<br>tP= 1 ms<br>ICRM<br>2800<br>A<br>Gesamt-Verlustleistung<br>Totalpowerdissipation<br>TC= 25°C, Tvj max= 175°C<br>Ptot<br>7,65<br>kW<br>Gate-Emitter-Spitzenspannung<br>Gate-emitterpeakvoltage<br>VGES<br>+/-20<br>V<br>**CharakteristischeWerte/CharacteristicValues**<br>min.<br>typ.<br>max.<br>Kollektor-Emitter-Sättigungsspannung<br>Collector-emittersaturationvoltage<br>IC= 1400 A, VGE= 15 V<br>IC= 1400 A, VGE= 15 V<br>IC= 1400 A, VGE= 15 V<br>VCE sat<br>1,75<br>2,05<br>2,15<br>2,05<br>V<br>V<br>V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Gate-Schwellenspannung<br>Gatethresholdvoltage<br>IC= 49,0 mA, VCE= VGE, Tvj= 25°C<br>VGEth<br>5,0<br>5,8<br>6,5<br>V<br>Gateladung<br>Gatecharge<br>VGE= -15 V ... +15 V<br>QG<br>9,60<br>µC<br>InternerGatewiderstand<br>Internalgateresistor<br>Tvj= 25°C<br>RGint<br>0,8<br>Ω<br>Eingangskapazität<br>Inputcapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cies<br>82,0<br>nF<br>Rückwirkungskapazität<br>Reversetransfercapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cres<br>4,60<br>nF<br>Kollektor-Emitter-Reststrom<br>Collector-emittercut-offcurrent<br>VCE= 1200 V, VGE= 0 V, Tvj= 25°C<br>ICES<br>5,0<br>mA<br>Gate-Emitter-Reststrom<br>Gate-emitterleakagecurrent<br>VCE= 0 V, VGE= 20 V, Tvj= 25°C<br>IGES<br>400<br>nA<br>Einschaltverzögerungszeit,induktiveLast<br>Turn-ondelaytime,inductiveload<br>IC= 1400 A, VCE= 600 V<br>VGE= ±15 V<br>RGon= 1,0Ω<br>td on<br>0,20<br>0,21<br>0,21<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Anstiegszeit,induktiveLast<br>Risetime,inductiveload<br>IC= 1400 A, VCE= 600 V<br>VGE= ±15 V<br>RGon= 1,0Ω<br>tr<br>0,12<br>0,13<br>0,13<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Abschaltverzögerungszeit,induktiveLast<br>Turn-offdelaytime,inductiveload<br>IC= 1400 A, VCE= 600 V<br>VGE= ±15 V<br>RGoff= 1,0Ω<br>td off<br>0,87<br>0,95<br>0,97<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Fallzeit,induktiveLast<br>Falltime,inductiveload<br>IC= 1400 A, VCE= 600 V<br>VGE= ±15 V<br>RGoff= 1,0Ω<br>tf<br>0,20<br>0,23<br>0,23<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>EinschaltverlustenergieproPuls<br>Turn-onenergylossperpulse<br>IC= 1400 A, VCE= 600 V, LS= 30 nH<br>VGE= ±15 V, di/dt = 8600 A/µs (Tvj= 150°C)<br>RGon= 1,0Ω<br>Eon<br>65,0<br>80,0<br>95,0<br>mJ<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>AbschaltverlustenergieproPuls<br>Turn-offenergylossperpulse<br>IC= 1400 A, VCE= 600 V, LS= 30 nH<br>VGE= ±15 V, du/dt = 2500 V/µs (Tvj= 150°C)<br>RGoff= 1,0Ω<br>Eoff<br>215<br>280<br>305<br>mJ<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Kurzschlußverhalten<br>SCdata<br>VGE ≤15 V, VCC= 800 V<br>VCEmax= VCES-LsCE·di/dt<br>ISC<br>5600<br>A<br>Tvj= 150°C<br>tP ≤10 µs,<br>Wärmewiderstand,ChipbisGehäuse<br>Thermalresistance,junctiontocase<br>proIGBT/perIGBT<br>RthJC<br>19,5 K/kW<br>Wärmewiderstand,GehäusebisKühlkörper<br>Thermalresistance,casetoheatsink<br>proIGBT/perIGBT<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)<br>RthCH<br>9,30<br>K/kW<br>TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions<br>Tvj op<br>-40<br>150<br>°C||
2
> IGBT-ModuleIGBT-modules FF1400R12IP4
## Technische�Information�/�Technical�Information
**==> picture [86 x 38] intentionally omitted <==**
**Vorläufige�Daten Preliminary�Data**
## **Diode,�Wechselrichter�/�Diode,�Inverter Höchstzulässige�Werte�/�Maximum�Rated�Values**
|PeriodischeSpitzensperrspannung<br>Repetitivepeakreversevoltage|Tvj= 25°C|VRRM|1200|V|
|---|---|---|---|---|
|Dauergleichstrom<br>ContinuousDCforwardcurrent||IF|1400|A|
|PeriodischerSpitzenstrom<br>Repetitivepeakforwardcurrent|tP= 1 ms|IFRM|2800|A|
|Grenzlastintegral<br>I²t-value|VR= 0 V, tP= 10 ms, Tvj= 125°C<br>VR= 0 V, tP= 10 ms, Tvj= 150°C|I²t|165<br>160<br>|kA²s<br>kA²s|
## **Charakteristische�Werte�/�Characteristic�Values**
||||||||
|---|---|---|---|---|---|---|
|**CharakteristischeWerte/CharacteristicValues**|||min.|typ.|max.||
|Durchlassspannung<br>Forwardvoltage|IF= 1400 A, VGE= 0 V<br>IF= 1400 A, VGE= 0 V<br>IF= 1400 A, VGE= 0 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|VF||1,90<br>1,85<br>1,80|2,30|V<br>V<br>V|
|Rückstromspitze<br>Peakreverserecoverycurrent|IF= 1400 A, - diF/dt = 8600 A/µs (Tvj=150°C)<br>VR= 600 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|IRM||780<br>1000<br>1050||A<br>A<br>A|
|Sperrverzögerungsladung<br>Recoveredcharge|IF= 1400 A, - diF/dt = 8600 A/µs (Tvj=150°C)<br>VR= 600 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Qr||135<br>235<br>270||µC<br>µC<br>µC|
|AbschaltenergieproPuls<br>Reverserecoveryenergy|IF= 1400 A, - diF/dt = 8600 A/µs (Tvj=150°C)<br>VR= 600 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Erec||70,0<br>110<br>130||mJ<br>mJ<br>mJ|
|Wärmewiderstand,ChipbisGehäuse<br>Thermalresistance,junctiontocase|proDiode/perdiode|RthJC|||36,0|K/kW|
|Wärmewiderstand,GehäusebisKühlkörper<br>Thermalresistance,casetoheatsink|proDiode/perdiode<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)|RthCH||17,0||K/kW|
|TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions||Tvj op|-40||150|°C|
## **NTC-Widerstand�/�NTC-Thermistor**
## **Charakteristische�Werte�/�Characteristic�Values**
|**NTC-Widerstand/NTC-Thermistor**<br>|**NTC-Widerstand/NTC-Thermistor**<br>||||||
|---|---|---|---|---|---|---|
|**CharakteristischeWerte/CharacteristicValues**|||min.<br>typ.||max.||
|Nennwiderstand<br>Ratedresistance|TC= 25°C|R25||5,00||kΩ|
|AbweichungvonR100<br>DeviationofR100|TC= 100°C, R100= 493Ω|∆R/R|-5||5|%|
|Verlustleistung<br>Powerdissipation|TC= 25°C|P25|||20,0|mW|
|B-Wert<br>B-value|R2= R25exp [B25/50(1/T2- 1/(298,15 K))]|B25/50||3375||K|
|B-Wert<br>B-value|R2= R25exp [B25/80(1/T2- 1/(298,15 K))]|B25/80||3411||K|
|B-Wert<br>B-value|R2= R25exp [B25/100(1/T2- 1/(298,15 K))]|B25/100||3433||K|
Angaben�gemäß�gültiger�Application�Note. Specification�according�to�the�valid�application�note.
prepared�by:�AC date�of�publication:�2013-11-05 approved�by:�MS revision:�2.4
3
IGBT-Module IGBT-modules
## FF1400R12IP4
|Modul / Module|||||||
|---|---|---|---|---|---|---|
|Isolations-Prüfspannung<br>~~Isolation test voltage~~<br>Material Modulgrundplatte<br>Material of module baseplate|RMS, f = 50 Hz, t = 1 min.<br>~~ee ~~|VISOL<br> ~~ee~~||4,0<br>Cu||kV|
|Innere Isolation<br>Internal isolation|Basisisolierung (Schutzklasse 1, EN61140)<br>basic insulation (class 1, IEC 61140)|||Al2O3|||
|Kriechstrecke<br>Creepage distance|Kontakt - Kuhlk6rper / terminal to heatsink<br>Kontakt - Kontakt / terminal to terminal|||33,0<br>33,0||mm|
|Luftstrecke<br>Clearance|Kontakt - Kuhlk6rper / terminal to heatsink<br>Kontakt - Kontakt / terminal to terminal|||19,0<br>19,0||mm|
|Vergleichszahl der Kriechwegbildung<br>Comperative tracking index||CTI||> 400|||
||||min.|typ.|max.||
|Warmewiderstand, Gehause bis Kuhlkérper| <br>Thermal resistance, case to heatsink|Paste<br>grease<br> pro Modul / per module<br>= 1 W/(m-k)/<br>= 1 W/(m-k)|RthCH||3,00||K/kW|
|Modulstreuinduktivität<br>~~Stray inductance module~~<br>Modulleitungswiderstand, Anschlusse -|~~ee ~~|LsCE<br> ~~ee ee~~|10<br>~~ee~~|||nH|
|Chip|TC<br>= 25°C, pro Schalter / per switch|RCC'+EE'||0,20||mΩ|
|Module lead resistance, terminals - chip|||||||
|Lagertemperatur<br>~~Storage temperature~~<br>Anzugsdrehmoment f. Modulmontage<br>Mounting torque for modul mounting|~~ee ~~<br>Schraube M5<br>- Montage gem. giltiger Applikationsschrift<br>Screw M5<br>- Mounting according to valid application note|Tstg<br>M<br> ~~ee ee~~|-40<br>150<br>3,00<br>-<br>6,00<br>~~ee~~|||°C<br>Nm|
|Anzugsdrehmoment f. elektr. Anschlusse<br>Terminal connection torque||Schraube M4<br>- Montage gem. gultiger Applikationsschrift<br>Screw M4<br>- Mounting according to valid application note<br>Schraube M8<br>- Montage gem. giltiger Applikationsschrift<br>Screw M8<br>- Mounting according to valid application note|M|1,8<br>8,0|-<br>-|2,1<br>10|Nm<br>Nm|
|Gewicht<br>Weight||G||1200||g|
4
IGBT-Module IGBT-modules
## FF1400R12IP4
**==> picture [489 x 596] intentionally omitted <==**
**----- Start of picture text -----**<br>
IC CE) IC CE)<br>VGE “AsV Tvj =150°C<br>2800 2800<br>2600 Tvj = 25°C 2600 VGE = 19V<br>Tvj = 125°C VGE = 17V<br>| ) | | Of fF es<br>2400 Tvj = 150°C 2400 VGE = 15V<br>ff fy E VGE = 13V ee<br>2200 es ee ee ee 2200 VVGEGE = 11V = 9V P| va tt<br>2000 e e 2000 a ie) eo<br>1800 1800<br>ee ee ee eee p o<br>1600 po 1600 ere<br>1400 ee [ee] ee 1400 eepo eyeeeeT<br>1200 ee ae 1200 po A|<br>1000 a ee eee ee 1000 po eT<br>800 ee ee 800 pe)<br>600 po 600 pp<br>400 400<br>ee eee ee Poey | |<br>pw]<br>200 poeee [Yt] 200 eee| | tT |<br>0 ee eee 0 AT Tt<br>0,0 0,5 1,0 1,5 2,0 2,5 3,0 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0<br>VCE [V] VCE [V]<br>Ubertragungscharakteristik IGBT,Wechselrichter (typisch) Schaltverluste IGBT,Wechselrichter (typisch)<br>transfer characteristic IGBT,Inverter (typical) switching losses IGBT, Inverter (typical)<br>IC GE) Eon C off C)<br>VCE eo VGE weVR Gon ot Ω ,R Goff =1 Ω ,V CE =600V<br>2800 800<br>2600 Tvj = 25°C Eon, Tvj = 125°C<br>Tvj = 125°C Eon, Tvj = 150°C<br>2400 a Tvj = 150°C re 700 Eoff, Tvj = 125°C<br>Eoff, Tvj = 150°C<br>2200 e e<br>600<br>2000 po} o e<br>i | 7<br>1800<br>500<br>1600 ee Y eei 2 Z<br>iee 2<br>1400 400<br>1200<br>So Ce<br>300<br>1000<br>os oe<br>800<br>200<br>600<br>400 eeee eee 100 ee<br>200<br>S s<br>0 0<br>5 6 7 8 9 10 11 12 0 400 800 1200 1600 2000 2400 2800<br>VGE [V] IC [A]<br> [A] [A]<br>IC IC<br> [A]<br>IC E [mJ]<br>**----- End of picture text -----**<br>
5
IGBT-Module IGBT-modules
## FF1400R12IP4
**==> picture [486 x 596] intentionally omitted <==**
**----- Start of picture text -----**<br>
Eon =f(R),E G off =f(R G) ZthJC = f(t)<br>VGE =+15V,1 C =1400A,V CE =600V<br>1000 _—__ 100 aee<br>Eon, Tvj = 125°C ZthJC : IGBT<br>900 [= Eon, Tvj = 150°C J o) LY WA HH—Re EEa HH} tH<br>Eoff, Tvj = 125°C<br>Eoff, Tvj = 150°C<br>800 =4} oo e e el el<br>700<br>10<br>ot t vA PTT TTT ETE P T<br>600 Pt tf ff ow]At} | CnCPE etecc o<br>500 Pt tf flUZ] } yd | PtSot<br>400 Pt | | Yt | | | dd 2AT EET EET<br>1<br>300 / rey VII<br>200 PP TY Ft ff dd | e eeeea TeeIN LUI|EI<br>i: 1 2 3 4<br>100 OeZL. I r τ ii[K/kW]: [s]: l 0,8 0,0008 4 0,013 13,2 0,05 1,5 0,6<br>0 ae ee ee 0,1<br>0 1 2 3 4 5 6 7 8 9 10 0,001 0,01 0,1 1 10<br>RG [ Ω ] t [s]<br>Sicherer Ruckwarts-Arbeitsbereich IGBT,Wechselrichter Durchlasskennlinie der Diode, Wechselrichter (typisch)<br>(RBSOA) forward characteristic of Diode, Inverter (typical)<br>reverse bias safe operating area IGBT,Inverter (RBSOA) IF =f(V F)<br>IC =f(V CE)<br>VGE Aen V,R Goff =1 Ω ,T vj =150°C<br>3000 2800<br>2800 IC, Modul Tvj = 25°C<br>IC, Chip 2520 Tvj = 125°C<br>2600 fF ——- I Tvj = 150°C e<br>2400 2240<br>2200<br>i 1960 Poo | fe<br>2000<br>1800 1680<br>1600<br>1400<br>1400<br>1200 1120<br>1000<br>840<br>800<br>SSSSSsHs EL<br>600 560<br>a Ta | fl<br>400<br>280<br>200 a ee)<br>a<br>0 A 0 /A<br>0 200 400 600 800 1000 1200 1400 0,0 0,5 1,0 1,5 2,0 2,5 3,0<br>VCE [V] VF [V]<br> [K/kW]<br>E [mJ]<br>thJC<br>Z<br> [A] [A]<br>IC IF<br>**----- End of picture text -----**<br>
6
IGBT-Module IGBT-modules
## FF1400R12IP4
**==> picture [487 x 596] intentionally omitted <==**
**----- Start of picture text -----**<br>
Erec =f (| F) Erec =f(R G)<br>RGon a Ω ,V CE =600V IF = 1400 A, V CE = 600 V<br>200 180<br>Erec, Tvj = 125°C 170 Erec, Tvj = 125°C<br>180 e Erec, Tvj = 150°C T 160 e Erec, Tvj = 150°C ee<br>150<br>160 TT} I | | | | | ff<br>| | ee 140 =<br>e e 130<br>140<br>ee e e<br>; > 120 Poh. | fT ot ht hE<br>120 |eee 110<br>PT | seeTt<br>100<br>100 90<br>80<br>80 ey 70<br>a |) FE NBEEE FEE<br>60<br>60 iy) P ot | eesKET fT Tt<br>50<br>7 pot ft | SA yt<br>40<br>40<br>PA | | | | |) Pee eee<br>30<br>20 ee 20 |eee| [| | | [ | | [| “FY<br>10<br>0 ee 0 | | | | | {| | tT | ht<br>0 400 800 1200 1600 2000 2400 2800 0 1 2 3 4 5 6 7 8 9 10<br>IF [A] RG [ Ω ]<br>Transienter Warmewiderstand Diode, Wechselrichter NTC-Widerstand-Temperaturkennlinie (typisch)<br>transient thermal impedance Diode, Inverter NTC-Thermistor-temperature characteristic (typical)<br>ZthJC =f (t) R=f(T)<br>100 100000<br>Fo ZthJC : Diode ee ee rn Rtyp a ee<br>Ee ae<br>PTee [TT] s TTTtiTTmeeaTd e a SS a e eee ee ee<br>te r a a ee ee ee<br>10 10000<br>a<br>Ee es<br>YY T TT ET ES NN se ee<br>ALTelTTT TTT aPNNe a eeee<br>| | ll 2 ee eee<br>1 1000<br>SAPETAI ItHCUM aPf [EN]<br>a a a<br>PT TTT ETT NS<br>| PT [TT] TTT TTT aa eeeeeeee<br>i: 1 2 3 4<br>ri[K/kW]: 3 8,5 23,8 0,7<br>PT TT τ i[s]: 0,0008 0,013 T 0,05 0,6 a<br>0,1 LM orm SC 100 dL<br>0,001 0,01 0,1 1 10 0 20 40 60 80 100 120 140 160<br>t [s] TC [°C]<br>E [mJ] E [mJ]<br>] Ω<br> [K/kW] R[<br>thJC<br>Z<br>**----- End of picture text -----**<br>
7
## Technische�Information�/�Technical�Information
> IGBT-ModuleIGBT-modules FF1400R12IP4
## **Schaltplan�/�circuit_diagram_headline**
**==> picture [86 x 38] intentionally omitted <==**
## **Vorläufige�Daten Preliminary�Data**
## **Gehäuseabmessungen�/�package�outlines**
prepared�by:�AC date�of�publication:�2013-11-05 approved�by:�MS revision:�2.4
8
**==> picture [66 x 19] intentionally omitted <==**
**----- Start of picture text -----**<br>
IGBT-Module<br>IGBT-modules<br>**----- End of picture text -----**<br>
## FF1400R12IP4
## **Nutzungsbedingungen**
## application.
9
Updated at April 28, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
About Novapart
Novapart is a B2B electronic component broker specialising in stock shortages and cost reduction. We source hard-to-find parts and identify compliant alternatives across a catalogue of 410,000+ components from 500+ manufacturers.
Learn more →Stock Shortage Specialist
When a component is unavailable, discontinued or has an unacceptable lead time, we tap into our network of vetted European and Asian distributors to source what you need — without compromising on quality or traceability.
Request a quote →Compliant Alternatives
We identify pin-to-pin, electrically equivalent substitutes that meet the same certifications (RoHS, AEC-Q100, REACH) as your original specification — validated against datasheets, not just part numbers. Often at a lower cost.
BOM Analysis service →