![FF1200R17IP5BPSA1 — IGBT Module, Dual [Half Bridge], 1.2 kA, 1.75 V, 175 °C, Module](/media/2/2/9/72E51454CFEE0922.webp)
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FF1200R17IP5BPSA1
IGBT Module, Dual [Half Bridge], 1.2 kA, 1.75 V, 175 °C, Module
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: INFINEON
- Product type: IGBT Modules
- SVHC: No SVHC (25-Jun-2025)
- Product Range: PrimePACK 2
- IGBT Technology: IGBT 5 [Trench/Field Stop]
- IGBT Termination: Stud
- Power Dissipation: -
- IGBT Configuration: Dual [Half Bridge]
- Transistor Mounting: Panel
- DC Collector Current: 1.2kA
- Power Dissipation Pd: -
- Transistor Case Style: Module
- Operating Temperature Max: 175°C
- Junction Temperature Tj Max: 175°C
- Continuous Collector Current: 1.2kA
- Collector Emitter Voltage Max: 1.7kV
- Collector Emitter Voltage V(br)ceo: 1.7kV
- Collector Emitter Saturation Voltage: 1.75V
- Collector Emitter Saturation Voltage Vce(on): 1.75V
| Delivery and price | |
|---|---|
| Units per pack | 1 |
| Price | 611.64 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
FF1200R17IP5 VCES = 1700V IC nom = 1200A / ICRM = 2400A - Hochleistungsumrichter - • Motorantriebe • Traktionsumrichter • Windgeneratoren - - - - CEsat - T - - - - - - - - - - - - CEsat - • T - - - - **Digit** Datasheet www.infineon.com 2017-09-13 FF1200R17IP5 **==> picture [86 x 38] intentionally omitted <==** |**IGBT,Wechselrichter/IGBT,Inverter**<br>**HöchstzulässigeWerte/MaximumRatedValues**|**IGBT,Wechselrichter/IGBT,Inverter**<br>**HöchstzulässigeWerte/MaximumRatedValues**|||||| |---|---|---|---|---|---|---| |Kollektor-Emitter-Sperrspannung<br>Collector-emittervoltage|Tvj= 25°C|VCES|1700|||V| |Kollektor-Dauergleichstrom<br>ContinuousDCcollectorcurrent|TC= 85°C, Tvj max= 175°C|IC nom|1200|||A| |PeriodischerKollektor-Spitzenstrom<br>Repetitivepeakcollectorcurrent|tP= 1 ms|ICRM|2400|||A| |Gate-Emitter-Spitzenspannung<br>Gate-emitterpeakvoltage||VGES|+/-20|||V| |**CharakteristischeWerte/CharacteristicValues**|||min.|typ.|max.|| |Kollektor-Emitter-Sättigungsspannung<br>Collector-emittersaturationvoltage|IC= 1200 A, VGE= 15 V<br>IC= 1200 A, VGE= 15 V<br>IC= 1200 A, VGE= 15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 175°C|VCE sat||1,75<br>2,15<br>2,35|2,30<br>2,75<br>3,00|V<br>V<br>V| |Gate-Schwellenspannung<br>Gatethresholdvoltage|IC= 43,0 mA, VCE= VGE, Tvj= 25°C|VGEth|5,35|5,80|6,25|V| |Gateladung<br>Gatecharge|VGE= -15 V ... +15 V, VCE= 900V|QG||6,00||µC| |InternerGatewiderstand<br>Internalgateresistor|Tvj= 25°C|RGint||1,2||Ω| |Eingangskapazität<br>Inputcapacitance|f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V|Cies||68,0||nF| |Rückwirkungskapazität<br>Reversetransfercapacitance|f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V|Cres||2,10||nF| |Kollektor-Emitter-Reststrom<br>Collector-emittercut-offcurrent|VCE= 1700 V, VGE= 0 V, Tvj= 25°C|ICES|||5,0|mA| |Gate-Emitter-Reststrom<br>Gate-emitterleakagecurrent|VCE= 0 V, VGE= 20 V, Tvj= 25°C|IGES|||400|nA| |Einschaltverzögerungszeit,induktiveLast<br>Turn-ondelaytime,inductiveload|IC= 1200 A, VCE= 900 V<br>VGE= ±15 V<br>RGon= 0,56Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 175°C|td on||0,27<br>0,28<br>0,29||µs<br>µs<br>µs| |Anstiegszeit,induktiveLast<br>Risetime,inductiveload|IC= 1200 A, VCE= 900 V<br>VGE= ±15 V<br>RGon= 0,56Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 175°C|tr||0,15<br>0,17<br>0,17||µs<br>µs<br>µs| |Abschaltverzögerungszeit,induktiveLast<br>Turn-offdelaytime,inductiveload|IC= 1200 A, VCE= 900 V<br>VGE= ±15 V<br>RGoff= 1,0Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 175°C|td off||0,64<br>0,71<br>0,76||µs<br>µs<br>µs| |Fallzeit,induktiveLast<br>Falltime,inductiveload|IC= 1200 A, VCE= 900 V<br>VGE= ±15 V<br>RGoff= 1,0Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 175°C|tf||0,15<br>0,20<br>0,21||µs<br>µs<br>µs| |EinschaltverlustenergieproPuls<br>Turn-onenergylossperpulse|IC= 1200 A, VCE= 900 V, LS= 45 nH<br>VGE= ±15 V, di/dt = 6450 A/µs (Tvj= 175°C)<br>RGon= 0,56Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 175°C|Eon||265<br>400<br>485||mJ<br>mJ<br>mJ| |AbschaltverlustenergieproPuls<br>Turn-offenergylossperpulse|IC= 1200 A, VCE= 900 V, LS= 45 nH<br>VGE= ±15 V, du/dt = 2800 V/µs (Tvj= 175°C)<br>RGoff= 1,0Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 175°C|Eoff||295<br>400<br>470||mJ<br>mJ<br>mJ| |Kurzschlußverhalten<br>SCdata|VGE ≤15 V, VCC= 1000 V<br>VCEmax= VCES-LsCE·di/dt<br>Tvj= 175°C<br>tP ≤10 µs,|ISC||4200||A| |Wärmewiderstand,ChipbisGehäuse<br>Thermalresistance,junctiontocase|proIGBT/perIGBT|RthJC|||24,3|K/kW| |Wärmewiderstand,GehäusebisKühlkörper<br>Thermalresistance,casetoheatsink|proIGBT/perIGBT<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)|RthCH||19,6||K/kW| |TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions||Tvj op|-40||175|°C| 2 V�3.0 2017-09-13 Datasheet FF1200R17IP5 **==> picture [86 x 38] intentionally omitted <==** ## **Diode,�Wechselrichter�/�Diode,�Inverter Höchstzulässige�Werte�/�Maximum�Rated�Values** |PeriodischeSpitzensperrspannung<br>Repetitivepeakreversevoltage|Tvj= 25°C|VRRM|1700|1700||V| |---|---|---|---|---|---|---| |Dauergleichstrom<br>ContinuousDCforwardcurrent||IF|1200|||A| |PeriodischerSpitzenstrom<br>Repetitivepeakforwardcurrent|tP= 1 ms|IFRM|2400|||A| |Grenzlastintegral<br>I²t-value|VR= 0 V, tP= 10 ms, Tvj= 125°C<br>VR= 0 V, tP= 10 ms, Tvj= 175°C|I²t|340<br>275|||kA²s<br>kA²s| |Spitzenverlustleistung<br>Maximumpowerdissipation|Tvj= 175°C|PRQM|1200|||kW| |**CharakteristischeWerte/CharacteristicValues**|||min.|typ.|max.|| |Durchlassspannung<br>Forwardvoltage|IF= 1200 A, VGE= 0 V<br>IF= 1200 A, VGE= 0 V<br>IF= 1200 A, VGE= 0 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 175°C|VF||1,80<br>1,75<br>1,75|2,20<br>2,15<br>2,15|V<br>V<br>V| |Rückstromspitze<br>Peakreverserecoverycurrent|IF= 1200 A, - diF/dt = 6450 A/µs (Tvj=175°C)<br>VR= 900 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 175°C|IRM||945<br>1100<br>1200||A<br>A<br>A| |Sperrverzögerungsladung<br>Recoveredcharge|IF= 1200 A, - diF/dt = 6450 A/µs (Tvj=175°C)<br>VR= 900 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 175°C|Qr||230<br>410<br>540||µC<br>µC<br>µC| |AbschaltenergieproPuls<br>Reverserecoveryenergy|IF= 1200 A, - diF/dt = 6450 A/µs (Tvj=175°C)<br>VR= 900 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 175°C|Erec||130<br>245<br>325||mJ<br>mJ<br>mJ| |Wärmewiderstand,ChipbisGehäuse<br>Thermalresistance,junctiontocase|proDiode/perdiode|RthJC|||43,9|K/kW| |Wärmewiderstand,GehäusebisKühlkörper<br>Thermalresistance,casetoheatsink|proDiode/perdiode<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)|RthCH||22,9||K/kW| |TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions||Tvj op|-40||175|°C| ## **NTC-Widerstand�/�NTC-Thermistor** ## **Charakteristische�Werte�/�Characteristic�Values** |**NTC-Widerstand/NTC-Thermistor**<br>|**NTC-Widerstand/NTC-Thermistor**<br>|||||| |---|---|---|---|---|---|---| |**CharakteristischeWerte/CharacteristicValues**|||min.|typ.|max.|| |Nennwiderstand<br>Ratedresistance|TNTC= 25°C|R25||5,00||kΩ| |AbweichungvonR100<br>DeviationofR100|TNTC= 100°C, R100= 493Ω|∆R/R|-5||5|%| |Verlustleistung<br>Powerdissipation|TNTC= 25°C|P25|||20,0|mW| |B-Wert<br>B-value|R2= R25exp [B25/50(1/T2- 1/(298,15 K))]|B25/50||3375||K| |B-Wert<br>B-value|R2= R25exp [B25/80(1/T2- 1/(298,15 K))]|B25/80||3411||K| |B-Wert<br>B-value|R2= R25exp [B25/100(1/T2- 1/(298,15 K))]|B25/100||3433||K| Angaben�gemäß�gültiger�Application�Note. Specification�according�to�the�valid�application�note. 3 V�3.0 2017-09-13 Datasheet FF1200R17IP5 **==> picture [86 x 38] intentionally omitted <==** ## **Modul�/�Module** |**Modul/Module**||||||| |---|---|---|---|---|---|---| |Isolations-Prüfspannung<br>Isolationtestvoltage|RMS, f = 50 Hz, t = 1 min.|VISOL|4,0<br>|||kV| |MaterialModulgrundplatte<br>Materialofmodulebaseplate|||Cu|||| |Kriechstrecke<br>Creepagedistance|Kontakt-Kühlkörper/terminaltoheatsink<br>Kontakt-Kontakt/terminaltoterminal||33,0<br>33,0<br>|||mm| |Luftstrecke<br>Clearance|Kontakt-Kühlkörper/terminaltoheatsink<br>Kontakt-Kontakt/terminaltoterminal||19,0<br>19,0<br>|||mm| |VergleichszahlderKriechwegbildung<br>Comperativetrackingindex||CTI||> 400||| ||||min.|typ.|max.|| |Modulstreuinduktivität<br>Strayinductancemodule||LsCE||18||nH| |Modulleitungswiderstand,Anschlüsse-<br>Chip<br>Moduleleadresistance,terminals-chip|TC=25°C,proSchalter/perswitch|RCC'+EE'<br>RAA'+CC'||0,15<br>0,09||mΩ| |Lagertemperatur<br>Storagetemperature||Tstg|-40||150|°C| |Anzugsdrehmomentf.Modulmontage<br>Mountingtorqueformodulmounting|SchraubeM5-Montagegem.gültigerApplikationsschrift<br>ScrewM5-Mountingaccordingtovalidapplicationnote|M|3,00||6,00|Nm| |Anzugsdrehmomentf.elektr.Anschlüsse<br>Terminalconnectiontorque|SchraubeM4-Montagegem.gültigerApplikationsschrift<br>ScrewM4-Mountingaccordingtovalidapplicationnote<br>SchraubeM8-Montagegem.gültigerApplikationsschrift<br>ScrewM8-Mountingaccordingtovalidapplicationnote|M|1,8<br>8,0|-<br>-|2,1<br>10|Nm<br>Nm| |Gewicht<br>Weight||G||825||g| Höchstzulässige Bodenplattenbetriebstemperatur TBPmax = 150°C Maximum baseplate operation temperature TBPmax = 150°C V�3.0 2017-09-13 Datasheet 4 FF1200R17IP5 **==> picture [86 x 38] intentionally omitted <==** **Ausgangskennlinie�IGBT,Wechselrichter�(typisch) output�characteristic�IGBT,Inverter�(typical)** IC�=�f�(VCE) VGE�=�15�V **==> picture [237 x 282] intentionally omitted <==** **----- Start of picture text -----**<br> 2400<br>2200 T T vj vj = 25°C = 125 ° C<br>Tvj = 175°C<br>2000<br>1800<br>1600<br>1400<br>1200<br>1000<br>800<br>600<br>400<br>200<br>0<br>0,2 0,6 1,0 1,4 1,8 2,2 2,6 3,0 3,4 3,8<br>VCE [V]<br> [A]<br>IC<br>**----- End of picture text -----**<br> **Ausgangskennlinienfeld�IGBT,Wechselrichter�(typisch) output�characteristic�IGBT,Inverter�(typical)** IC�=�f�(VCE) Tvj�=�175°C **==> picture [237 x 282] intentionally omitted <==** **----- Start of picture text -----**<br> 2400<br>VGE = 20V<br>2200 VGE = 15V<br>VGE = 12V<br>VGE = 10V<br>2000 VGE = 9V<br>VGE = 8V<br>1800<br>1600<br>1400<br>1200<br>1000<br>800<br>600<br>400<br>200<br>0<br>0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0 5,5 6,0<br>VCE [V]<br> [A]<br>IC<br>**----- End of picture text -----**<br> **Übertragungscharakteristik�IGBT,Wechselrichter�(typisch) transfer�characteristic�IGBT,Inverter�(typical)** IC�=�f�(VGE) VCE�=�20�V ## **Schaltverluste�IGBT,Wechselrichter�(typisch) switching�losses�IGBT,Inverter�(typical)** Eon�=�f�(IC),�Eoff�=�f�(IC) VGE�=�±15�V,�RGon�=�0.56� Ω ,�RGoff�=�1� Ω ,�VCE�=�900�V **==> picture [487 x 282] intentionally omitted <==** **----- Start of picture text -----**<br> 2400 1200<br>2200 T T vj vj = 25°C = 125 ° C 1100 E E on on , T , T vj vj = 125°C = 175 ° C<br>Tvj = 175°C Eoff, Tvj = 125°C<br>Eoff, Tvj = 175°C<br>2000 1000<br>1800 900<br>1600 800<br>1400 700<br>1200 600<br>1000 500<br>800 400<br>600 300<br>400 200<br>200 100<br>0 0<br>5 6 7 8 9 10 11 12 0 300 600 900 1200 1500 1800 2100 2400<br>VGE [V] IC [A]<br> [A]<br>IC E [mJ]<br>**----- End of picture text -----**<br> V�3.0 2017-09-13 Datasheet 5 FF1200R17IP5 **==> picture [485 x 309] intentionally omitted <==** **----- Start of picture text -----**<br> Eon =f(R),E G off =f(R G) ZthJC =f (t)<br>VGE =+15V,1 C =1200A,V CE =900V<br>1500 100<br>1400 [ EE nn onon, T, Tvjvj = 125°C = 175°C ee pot ZthJC : IGBT TT<br>Eoff, Tvj = 125°C<br>1300 E off , T vj = 175°C<br>1200<br>7 “ 7<br>1100<br>1000<br>900 |<br>800<br>10<br>700<br>600<br>500<br>400<br>300<br>200 i: 1 2 3 4<br>ri[K/kW]: 1,56 2,27 18,6 1,91<br>τ i[s]: 0,00058 0,0105 0,0488 0,648<br>100<br>0 1<br>0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0 5,5 0,001 0,01 0,1 1 10<br>RG [ Ω ] t [s]<br> [K/kW]<br>E [mJ]<br>thJC<br>Z<br>**----- End of picture text -----**<br> ## **(RBSOA)** > IF =f(V F) **==> picture [486 x 301] intentionally omitted <==** **----- Start of picture text -----**<br> IC =f(V CE)<br>VGE =415V,R Goff =1 Ω ,T vj =175°C<br>2500 2400<br>IC, Modul 2200 T T vj vj = 25°C = 125 ° C<br>IC, Chip Tvj = 175°C<br>2000<br>2000 ET TT Tf Ee |<br>1800<br>1600<br>1500<br>1400<br>1200<br>1000<br>1000 800 Pi y |<br>A<br>600<br>500<br>400<br>200<br>aeLY<br>0 0<br>0 200 400 600 800 1000 1200 1400 1600 1800 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6 1,8 2,0 2,2 2,4 2,6<br>VCE [V] VF [V]<br> [A] [A]<br>IC IF<br>**----- End of picture text -----**<br> 6 Datasheet 2017-09-13 FF1200R17IP5 **==> picture [486 x 309] intentionally omitted <==** **----- Start of picture text -----**<br> Erec =f il F) Erec =f(R G)<br>RGon =0.56 Ω ,V CE =900V IF =1200A,V CE =900V<br>400 500<br>Erec, Tvj = 125°C Erec, Tvj = 125°C<br>Erec, Tvj = 175°C Erec, Tvj = 175°C<br>450<br>350<br>400<br>300<br>350<br>250<br>300<br>200 250<br>200<br>150<br>/<br>/ 150<br>/<br>100 7<br>100<br>50<br>50<br>0 0<br>0 300 600 900 1200 1500 1800 2100 2400 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0 5,5<br>IF [A] RG [ Ω ]<br>E [mJ] E [mJ]<br>**----- End of picture text -----**<br> ZthJC =f (t) IR =f(V R) Tvj = **==> picture [236 x 282] intentionally omitted <==** **----- Start of picture text -----**<br> 100<br>ZthJC : Diode<br>10<br>i: 1 2 3 4<br>ri[K/kW]: 3,09 10,7 26,2 3,84<br>τ i[s]: 0,000893 0,0176 0,0641 0,849<br>1<br>0,001 0,01 0,1 1 10<br>t [s]<br> [K/kW]<br>thJC<br>Z<br>**----- End of picture text -----**<br> **==> picture [240 x 282] intentionally omitted <==** **----- Start of picture text -----**<br> 2700<br>IR, Modul<br>2400<br>2100<br>1800<br>1500<br>1200<br>900<br>600<br>300<br>0<br>0 200 400 600 800 1000 1200 1400 1600 1800<br>VR [V]<br> [A]<br>IR<br>**----- End of picture text -----**<br> Datasheet 7 2017-09-13 FF1200R17IP5 **==> picture [86 x 38] intentionally omitted <==** ## **NTC-Widerstand-Temperaturkennlinie�(typisch) NTC-Thermistor-temperature�characteristic�(typical)** R�=�f�(T) **==> picture [240 x 282] intentionally omitted <==** **----- Start of picture text -----**<br> 100000<br>Rtyp<br>10000<br>1000<br>100<br>0 20 40 60 80 100 120 140 160<br>TC [°C]<br>] Ω<br>R[<br>**----- End of picture text -----**<br> 8 V�3.0 2017-09-13 Datasheet FF1200R17IP5 **==> picture [86 x 38] intentionally omitted <==** ## **Schaltplan�/�Circuit�diagram** ## **Gehäuseabmessungen�/�Package�outlines** **==> picture [492 x 401] intentionally omitted <==** **----- Start of picture text -----**<br> screwing depth<br>36 � 0,2 18 � 0,2 (2x) max. 16 (4x)<br>screwing depth<br>max. 8 (7x)<br>A 172 � 0,5<br>150<br>113<br>103<br>recommeded design height 92<br>lower side PCB to baseplate<br>76 + 0<br>�5,5<br>58 -0,1<br>25,9 � 0,25 8 � 0,1 (7x) � (10x) � 0,25 A B C<br>� 0,4 A<br>(7x)<br>1 MAX<br>M4<br>� � 0,6 A B C<br>(7X)<br>45,5 � 0,5<br>25<br>14<br>M8<br>� � 0,6 A B C<br>(4x)<br>37,7 � 0,25 �285,5 � 0,1 17 � 0,1 C<br>B<br>recommeded design height 39<br>lower side bus bar to baseplate 64<br>78<br>117<br>156<br>0,3<br> �<br>0,6 0,1<br>+ - 0 � 36,5<br>22 3<br>0,3<br>0,5 � 10 0,3<br> � 73 21 �<br>89 10 21,5<br>0,3<br> � 39<br>0,5<br>12,3 4,3 0,1 � �5,5<br> � 24,5<br>20<br>**----- End of picture text -----**<br> 9 V�3.0 2017-09-13 Datasheet ## **Trademarks** ## **WARNHINWEIS** ## **WARNINGS**
Updated at April 28, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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