FF100R12KS4HOSA1

IGBT Module, Dual, 150 A, 3.2 V, 780 W, 125 °C, Module

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Manufacturer: INFINEON
Product type:
Transistor Polarity:N Channel; DC Collector Current:150A; Collector Emitter Saturation Voltage Vce(on):3.2V; Power Dissipation Pd:780W; Collector Emitter Voltage V(br)ceo:1.2kV; Transisto
SVHC: No SVHC (23-Jan-2024)
Product Range: 62mm C
IGBT Technology: IGBT 2 Fast
IGBT Termination: Stud
Power Dissipation: 780W
IGBT Configuration: Dual
Transistor Mounting: Panel
Transistor Polarity: N Channel
DC Collector Current: 150A
Power Dissipation Pd: 780W
Transistor Case Style: Module
Operating Temperature Max: 125°C
Junction Temperature Tj Max: 125°C
Continuous Collector Current: 150A
Collector Emitter Voltage Max: 1.2kV
Collector Emitter Voltage V(br)ceo: 1.2kV
Collector Emitter Saturation Voltage: 3.2V
Collector Emitter Saturation Voltage Vce(on): 3.2V

Delivery and price
Units per pack	10
Price	84.14 €
Current stock	10+
Lead time	30 days

Datasheet

Updated at March 30, 2026