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FF1000R17IE4BOSA1
IGBT Module, Dual, 1.39 kA, 2 V, 6.25 kW, 150 °C, Module
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: INFINEON
- Product type: IGBT Modules
- Transistor Polarity:N Channel; DC Collector Current:1.39kA; Collector Emitter Saturation Voltage Vce(on):2V; Power Dissipation Pd:6.25kW; Collector Emitter Voltage V(br)ceo:1.7kV; Trans
- SVHC: No SVHC (25-Jun-2025)
- Product Range: PrimePACK 3
- IGBT Technology: IGBT 4 [Trench/Field Stop]
- IGBT Termination: Stud
- Power Dissipation: 6.25kW
- IGBT Configuration: Dual
- Transistor Mounting: Panel
- Transistor Polarity: N Channel
- DC Collector Current: 1.39kA
- Power Dissipation Pd: 6.25kW
- Transistor Case Style: Module
- Operating Temperature Max: 150°C
- Junction Temperature Tj Max: 150°C
- Continuous Collector Current: 1.39kA
- Collector Emitter Voltage Max: 1.7kV
- Collector Emitter Voltage V(br)ceo: 1.7kV
- Collector Emitter Saturation Voltage: 2V
- Collector Emitter Saturation Voltage Vce(on): 2V
| Delivery and price | |
|---|---|
| Units per pack | 1 |
| Price | 723.03 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
IGBT-Module IGBT-modules ## FF1000R17IE4 VCES = 1700V IC nom = 1000A / ICRM = 2000A - 3-Level-Applikationen - • Hilfsumrichter • Hochleistungsumrichter • Motorantriebe • Windgeneratoren - - - - - T - CEsat - - - - - Kupferbodenplatte - Standardgehäuse - 3-Level-Applications - - - - - - - - - T - CEsat - - - - - - 1 > IGBT-ModuleIGBT-modules FF1000R17IE4 ## Technische�Information�/�Technical�Information **==> picture [86 x 38] intentionally omitted <==** ## **IGBT,Wechselrichter�/�IGBT,Inverter** **Höchstzulässige�Werte�/�Maximum�Rated�Values** |TechnischeInformation/TechnicalInformation<br>FF1000R17IE4<br>IGBT-Module<br>IGBT-modules|| |---|---| |preparedby:TA<br>approvedby:PL<br>dateofpublication:2013-11-05<br>revision:3.2<br>**IGBT,Wechselrichter/IGBT,Inverter**<br>**HöchstzulässigeWerte/MaximumRatedValues**<br>Kollektor-Emitter-Sperrspannung<br>Collector-emittervoltage<br>Tvj= 25°C<br>VCES<br>1700<br>V<br>Kollektor-Dauergleichstrom<br>ContinuousDCcollectorcurrent<br>TC= 100°C, Tvj max= 175°C<br>TC= 25°C, Tvj max= 175°C<br>IC nom<br>IC<br>1000<br>1390<br>A<br>A<br>PeriodischerKollektor-Spitzenstrom<br>Repetitivepeakcollectorcurrent<br>tP= 1 ms<br>ICRM<br>2000<br>A<br>Gesamt-Verlustleistung<br>Totalpowerdissipation<br>TC= 25°C, Tvj max= 175°C<br>Ptot<br>6,25<br>kW<br>Gate-Emitter-Spitzenspannung<br>Gate-emitterpeakvoltage<br>VGES<br>+/-20<br>V<br>**CharakteristischeWerte/CharacteristicValues**<br>min.<br>typ.<br>max.<br>Kollektor-Emitter-Sättigungsspannung<br>Collector-emittersaturationvoltage<br>IC= 1000 A, VGE= 15 V<br>IC= 1000 A, VGE= 15 V<br>IC= 1000 A, VGE= 15 V<br>VCE sat<br>2,00<br>2,35<br>2,45<br>2,45<br>2,80<br>V<br>V<br>V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Gate-Schwellenspannung<br>Gatethresholdvoltage<br>IC= 36,0 mA, VCE= VGE, Tvj= 25°C<br>VGEth<br>5,2<br>5,8<br>6,4<br>V<br>Gateladung<br>Gatecharge<br>VGE= -15 V ... +15 V<br>QG<br>10,0<br>µC<br>InternerGatewiderstand<br>Internalgateresistor<br>Tvj= 25°C<br>RGint<br>1,5<br>Ω<br>Eingangskapazität<br>Inputcapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cies<br>81,0<br>nF<br>Rückwirkungskapazität<br>Reversetransfercapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cres<br>2,60<br>nF<br>Kollektor-Emitter-Reststrom<br>Collector-emittercut-offcurrent<br>VCE= 1700 V, VGE= 0 V, Tvj= 25°C<br>ICES<br>5,0<br>mA<br>Gate-Emitter-Reststrom<br>Gate-emitterleakagecurrent<br>VCE= 0 V, VGE= 20 V, Tvj= 25°C<br>IGES<br>400<br>nA<br>Einschaltverzögerungszeit,induktiveLast<br>Turn-ondelaytime,inductiveload<br>IC= 1000 A, VCE= 900 V<br>VGE= ±15 V<br>RGon= 1,2Ω<br>td on<br>0,55<br>0,60<br>0,60<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Anstiegszeit,induktiveLast<br>Risetime,inductiveload<br>IC= 1000 A, VCE= 900 V<br>VGE= ±15 V<br>RGon= 1,2Ω<br>tr<br>0,10<br>0,12<br>0,12<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Abschaltverzögerungszeit,induktiveLast<br>Turn-offdelaytime,inductiveload<br>IC= 1000 A, VCE= 900 V<br>VGE= ±15 V<br>RGoff= 1,8Ω<br>td off<br>1,00<br>1,25<br>1,30<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Fallzeit,induktiveLast<br>Falltime,inductiveload<br>IC= 1000 A, VCE= 900 V<br>VGE= ±15 V<br>RGoff= 1,8Ω<br>tf<br>0,29<br>0,50<br>0,59<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>EinschaltverlustenergieproPuls<br>Turn-onenergylossperpulse<br>IC= 1000 A, VCE= 900 V, LS= 30 nH<br>VGE= ±15 V, di/dt = 8000 A/µs (Tvj= 150°C)<br>RGon= 1,2Ω<br>Eon<br>265<br>390<br>415<br>mJ<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>AbschaltverlustenergieproPuls<br>Turn-offenergylossperpulse<br>IC= 1000 A, VCE= 900 V, LS= 30 nH<br>VGE= ±15 V, du/dt = 3000 V/µs (Tvj= 150°C)<br>RGoff= 1,8Ω<br>Eoff<br>200<br>295<br>330<br>mJ<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Kurzschlußverhalten<br>SCdata<br>VGE ≤15 V, VCC= 1000 V<br>VCEmax= VCES-LsCE·di/dt<br>ISC<br>4000<br>A<br>Tvj= 150°C<br>tP ≤10 µs,<br>Wärmewiderstand,ChipbisGehäuse<br>Thermalresistance,junctiontocase<br>proIGBT/perIGBT<br>RthJC<br>24,0 K/kW<br>Wärmewiderstand,GehäusebisKühlkörper<br>Thermalresistance,casetoheatsink<br>proIGBT/perIGBT<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)<br>RthCH<br>9,00<br>K/kW<br>TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions<br>Tvj op<br>-40<br>150<br>°C|| 2 > IGBT-ModuleIGBT-modules FF1000R17IE4 ## Technische�Information�/�Technical�Information **==> picture [86 x 38] intentionally omitted <==** ## **Diode,�Wechselrichter�/�Diode,�Inverter** ## **Höchstzulässige�Werte�/�Maximum�Rated�Values** |PeriodischeSpitzensperrspannung<br>Repetitivepeakreversevoltage|Tvj= 25°C|VRRM|1700|V| |---|---|---|---|---| |Dauergleichstrom<br>ContinuousDCforwardcurrent||IF|1000|A| |PeriodischerSpitzenstrom<br>Repetitivepeakforwardcurrent|tP= 1 ms|IFRM|2000|A| |Grenzlastintegral<br>I²t-value|VR= 0 V, tP= 10 ms, Tvj= 125°C|I²t|140<br>|kA²s| ## **Charakteristische�Werte�/�Characteristic�Values** |||||||| |---|---|---|---|---|---|---| |**CharakteristischeWerte/CharacteristicValues**|||min.|typ.|max.|| |Durchlassspannung<br>Forwardvoltage|IF= 1000 A, VGE= 0 V<br>IF= 1000 A, VGE= 0 V<br>IF= 1000 A, VGE= 0 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|VF||1,85<br>1,95<br>1,95|2,25<br>2,35|V<br>V<br>V| |Rückstromspitze<br>Peakreverserecoverycurrent|IF= 1000 A, - diF/dt = 8000 A/µs (Tvj=150°C)<br>VR= 900 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|IRM||1050<br>1200<br>1250||A<br>A<br>A| |Sperrverzögerungsladung<br>Recoveredcharge|IF= 1000 A, - diF/dt = 8000 A/µs (Tvj=150°C)<br>VR= 900 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Qr||245<br>410<br>480||µC<br>µC<br>µC| |AbschaltenergieproPuls<br>Reverserecoveryenergy|IF= 1000 A, - diF/dt = 8000 A/µs (Tvj=150°C)<br>VR= 900 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Erec||115<br>205<br>245||mJ<br>mJ<br>mJ| |Wärmewiderstand,ChipbisGehäuse<br>Thermalresistance,junctiontocase|proDiode/perdiode|RthJC|||48,0|K/kW| |Wärmewiderstand,GehäusebisKühlkörper<br>Thermalresistance,casetoheatsink|proDiode/perdiode<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)|RthCH||18,0||K/kW| |TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions||Tvj op|-40||150|°C| ## **NTC-Widerstand�/�NTC-Thermistor** ## **Charakteristische�Werte�/�Characteristic�Values** |**NTC-Widerstand/NTC-Thermistor**<br>|**NTC-Widerstand/NTC-Thermistor**<br>|||||| |---|---|---|---|---|---|---| |**CharakteristischeWerte/CharacteristicValues**|||min.<br>typ.||max.|| |Nennwiderstand<br>Ratedresistance|TC= 25°C|R25||5,00||kΩ| |AbweichungvonR100<br>DeviationofR100|TC= 100°C, R100= 493Ω|∆R/R|-5||5|%| |Verlustleistung<br>Powerdissipation|TC= 25°C|P25|||20,0|mW| |B-Wert<br>B-value|R2= R25exp [B25/50(1/T2- 1/(298,15 K))]|B25/50||3375||K| |B-Wert<br>B-value|R2= R25exp [B25/80(1/T2- 1/(298,15 K))]|B25/80||3411||K| |B-Wert<br>B-value|R2= R25exp [B25/100(1/T2- 1/(298,15 K))]|B25/100||3433||K| Angaben�gemäß�gültiger�Application�Note. Specification�according�to�the�valid�application�note. prepared�by:�TA date�of�publication:�2013-11-05 approved�by:�PL revision:�3.2 3 IGBT-Module IGBT-modules ## FF1000R17IE4 |Modul / Module||||||| |---|---|---|---|---|---|---| |Isolations-Prüfspannung<br>~~Isolation test voltage~~<br>Material Modulgrundplatte<br>Material of module baseplate|RMS, f = 50 Hz, t = 1 min.<br>~~ee ~~|VISOL<br> ~~ee~~||4,0<br>Cu||kV| |Innere Isolation<br>Internal isolation|Basisisolierung (Schutzklasse 1, EN61140)<br>basic insulation (class 1, IEC 61140)|||Al2O3||| |Kriechstrecke<br>Creepage distance|Kontakt - Kuhlkorper / terminal to heatsink<br>Kontakt - Kontakt / terminal to terminal|||33,0<br>33,0||mm| |Luftstrecke<br>Clearance|Kontakt - Kuhlk6rper / terminal to heatsink<br>Kontakt - Kontakt / terminal to terminal|||19,0<br>19,0||mm| |Vergleichszahl der Kriechwegbildung<br>Comperative tracking index||CTI||> 400||| ||||min.|typ.|max.|| |Warmewiderstand, Gehause bis Kuhlk6rper| <br>Thermal resistance, case to heatsink|Paste<br>grease<br> pro Modul / per module<br>= 1 W/(m-k)/<br>= 1 W/(m-k)|RthCH||3,00||K/kW| |Modulstreuinduktivität<br>~~Stray inductance module~~<br>Modulleitungswiderstand, Anschlusse -|~~ee ~~|LsCE<br> ~~ee ee~~|10<br>~~ee~~|||nH| |Chip|TC<br>= 25°C, pro Schalter / per switch|RCC'+EE'||0,20||mΩ| |Module lead resistance, terminals - chip||||||| |Lagertemperatur<br>~~Storage temperature~~<br>Anzugsdrehmoment f. Modulmontage<br>Mounting torque for modul mounting|~~ee ~~<br>Schraube M5<br>- Montage gem. giltiger Applikationsschrift<br>Screw M5<br>- Mounting according to valid application note|Tstg<br>M<br> ~~ee ee~~|-40<br>150<br>3,00<br>-<br>6,00<br>~~ee~~|||°C<br>Nm| |Anzugsdrehmoment f. elektr. Anschlusse<br>Terminal connection torque||Schraube M4<br>- Montage gem. gultiger Applikationsschrift<br>Screw M4<br>- Mounting according to valid application note<br>Schraube M8<br>- Montage gem. giltiger Applikationsschrift<br>Screw M8<br>- Mounting according to valid application note|M|1,8<br>8,0|-<br>-|2,1<br>10|Nm<br>Nm| |Gewicht<br>Weight||G||1200||g| 4 ## IGBT-Module IGBT-modules ## FF1000R17IE4 **==> picture [489 x 596] intentionally omitted <==** **----- Start of picture text -----**<br> IC =f(V CE) IC =f(V CE)<br>VGE =15V Tvj = 150°C<br>2000 2000<br>Tvj = 25°C VGE = 20V<br>1800 Tvj = 125°C Po 1800 VGE = 15V<br>Tvj = 150°C AE ey | VGE = 12V Lo<br>VGE = 10V<br>1600 ee 1600 | VGE = 9V ii<br>Af | |<br>VGE = 8V<br>i<br>1400 1400<br>/ “ / / “<br>1200 See 1200<br>1000 1000<br>pi | |eae Eee<br>800 800<br>600 ee ee 600<br>ee ee 2<br>400 400<br>200 200<br>ee LGA<br>0 0<br>po | La<br>0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0<br>VCE [V] VCE [V]<br>Ubertragungscharakteristik IGBT,Wechselrichter (typisch) Schaltverluste IGBT,Wechselrichter (typisch)<br>transfer characteristic IGBT,Inverter (typical) switching losses IGBT, Inverter (typical)<br>IC =f(V GE) Eon =f(l),E C off =f(I C)<br>VCE =20V VGE =415V,R Gon =1.2 Ω ,R Goff =18 Ω ,V CE =900V<br>2000 Ld 1100 SS TS | fy<br>Tvj = 25°C Eon, Tvj = 150°C<br>1800 F Tvj = 125°C L 1000 Eon, Tvj = 125°C<br>Tvj = 150°C Eoff, Tvj = 150°C<br>eS fe 900 OE Eoff, Tvj = 125°C LEE<br>1600<br>Tse) | ttt<br>800<br>1400 rT fy | dfU7] UL EYA<br>700<br>e e a<br>1200<br>600<br>1000<br>500<br>++} cae eee<br>800 | | ihe2<br>pf A peERR Zee e<br>400<br>Se ) Za<br>600<br>Se 300 eeeLAA ae<br>400 f LgeZo<br>200<br>eet<br>200 100 LE<br>0 0<br>5 6 7 8 9 10 11 12 0 200 400 600 800 1000 1200 1400 1600 1800 2000<br>VGE [V] IC [A]<br> [A] [A]<br>IC IC<br> [A]<br>IC E [mJ]<br>**----- End of picture text -----**<br> 5 IGBT-Module IGBT-modules ## FF1000R17IE4 **==> picture [486 x 606] intentionally omitted <==** **----- Start of picture text -----**<br> switching losses IGBT,Inverter (typical) transient thermal impedance IGBT, Inverter<br>Eon =f(R),E G off =f(R G) ZthJC = f (t)<br>VGE =+15V,1 C =1000A,V CE =900V<br>1200 100<br>C Eon, Tvj = 150°C e] paa i Sooo ZthJC : IGBT eee<br>1100 Eon, Tvj = 125°C 4<— HH— E E HH} tH<br>Eoff, Tvj = 150°C<br>1000900 | | Eoff, Tvj = 125°C |WaaZLee] erPe a PT ET ie ell<br> ot it ter t<br>800 eee Zee 10 a ae<br>a 2eee<br>700600 P|P| || AtLAR]A ffttf]tf] PTPF | CaTA EH ——F—EEHHih—— -H HH1<br>y 200 ||<br>500<br>400 1<br>a eee<br>a<br>300 ae eee PtCe ttee ee ee eee<br>200 P| fo fof ff ff] Pea iie<br>i: 1 2 3 4<br>ri[K/kW]: 0,8 3,7 17 2,5<br>100 τ i[s]: 0,0008 0,013 0,05 0,6<br>0 0,1<br>0 1 2 3 4 5 6 7 8 9 0,001 0,01 0,1 1 10<br>RG [ Ω ] t [s]<br>Sicherer Ruckwarts-Arbeitsbereich IGBT,Wechselrichter Durchlasskennlinie der Diode, Wechselrichter (typisch)<br>(RBSOA) forward characteristic of Diode, Inverter (typical)<br>reverse bias safe operating area IGBT,Inverter (RBSOA) IF =f(V F)<br>IC =f(V CE)<br>VGE =415V,R Goff =1.8 Ω ,T vj =150°C<br>2200 a 2000 a | i<br>IC, Modul Tvj = 25°C<br>2000 FeL I C , Chip TT 1800 Tvj = 125°C<br>Tvj = 150°C<br>Ppl] it ) | J | | fe<br>1800 = | | tt tel 1600 hf e:<br>1600<br>ee<br>1400<br>1400 t/<br>Set 1200 p y[<br>SO /<br>1200<br>ee<br>1000<br>1000<br>800<br>800<br>600<br>600<br>400 Ht 400 P| Ty | |<br>200 200<br>0 0<br>0 200 400 600 800 1000 1200 1400 1600 1800 0,0 0,5 1,0 1,5 2,0 2,5 3,0<br>VCE [V] VF [V]<br> [K/kW]<br>E [mJ]<br>thJC<br>Z<br> [A] [A]<br>IC IF<br>**----- End of picture text -----**<br> 6 IGBT-Module IGBT-modules ## FF1000R17IE4 **==> picture [489 x 596] intentionally omitted <==** **----- Start of picture text -----**<br> Erec =f(I F) Erec =f(R G)<br>RGon ep Ω ,V CE =900V IF = 000A, V CE = 900 V<br>350 Se | 350 |<br>Erec, Tvj = 150°C Erec, Tvj = 150°C<br>Erec, Tvj = 125°C Erec, Tvj = 125°C<br>300 300<br>EJ ti} |} Edy<br>250 250<br>Ee eee] EE E<br>200 200<br>eer LINGLE EEE<br>150 LfJeri ity 150 ESSA]NAL<br>aE EL eee|<br>100 100<br>50 50<br>0 0<br>0 200 400 600 800 1000 1200 1400 1600 1800 2000 0 1 2 3 4 5 6 7 8 9<br>IF [A] RG [ Ω ]<br>Transienter Warmewiderstand Diode, Wechselrichter Sicherer Arbeitsbereich Diode, Wechselrichter (SOA)<br>transient thermal impedance Diode, Inverter safe operation area Diode, Inverter (SOA)<br>ZthJC =f(t0 IR =f(V R)<br>Tvj = (50°C<br>100 Ls ZthJC : Diode 2400 Pt tT<br>HOT T o t oo eon fI IR, Modul E L ELE ELLE LLL<br>| PTI PE e T 2000 TTTP TNTooTT TTT<br>a ee || ;<br>1600<br>IE EET LEATEEE<br>| PLEIN EEE<br>10 1200<br>rTee| Veo rr TTT TTT INSTTN TT<br>7Cttt 800 Py YT ELL ET ~<br>PAL ANE<br>PTI TIME FTEETI TIETETETT) TTT TTT PA=<br>400<br>i: 1 2 3 4<br>ri[K/kW]: 3 11,5 30 3,5<br>τ i[s]: 0,0008 0,013 0,05 0,6<br>1 CL bo l 0 PLL ET EEE<br>0,001 0,01 0,1 1 10 0 200 400 600 800 1000 1200 1400 1600 1800<br>t [s] VR [V]<br>E [mJ] E [mJ]<br> [K/kW]thJC [A]IR<br>Z<br>**----- End of picture text -----**<br> 7 IGBT-Module IGBT-modules ## FF1000R17IE4 **==> picture [240 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 100000<br>Rtyp<br>H— = (| —<br>Ras ce<br>e e<br>a ee<br>a e e<br>10000 i<br>nt ee ee<br>ERaee ee ee ee<br>aPENeNe eses e s es esseees<br>pp NENf<br>1000 ERNE<br>—————<br>poNN<br>sees<br>PN<br>a ee eee<br>100<br>0 20 40 60 80 100 120 140 160<br>TC [°C]<br>] Ω<br>R[<br>**----- End of picture text -----**<br> 8 Technische�Information�/�Technical�Information IGBT-ModuleIGBT-modules FF1000R17IE4 **==> picture [86 x 38] intentionally omitted <==** ## **Schaltplan�/�circuit_diagram_headline** ## **Gehäuseabmessungen�/�package�outlines** prepared�by:�TA approved�by:�PL date�of�publication:�2013-11-05 revision:�3.2 9 **==> picture [66 x 19] intentionally omitted <==** **----- Start of picture text -----**<br> IGBT-Module<br>IGBT-modules<br>**----- End of picture text -----**<br> ## FF1000R17IE4 ## **Nutzungsbedingungen** application. 10
Updated at April 28, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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