FES6J

## Ultrafast Rectifiers, Surface Mount, 6 A, 200 V - 600 V 

## FES6, NRVFES6 Series 

## **Features** 

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www.onsemi.com<br>3<br>2<br>os 1<br>TO−277−3LD<br>CASE 340BQ<br>**----- End of picture text -----**<br>


- Very Low Profile: Typical Height of 1.1 mm 

- Ultrafast Recovery Time 

- Low Forward Voltage Drop 

- Low Thermal Resistance 

- Very Stable Operation at Industrial Temperature, 150°C 

- RoHS Compliant 

- Green Molding Compound as per IEC61249 Standard 

- Lead Free in Compliance with EU RoHS 2011/65/EU Directive 

- With DAP Option Only 

- NRV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable 

Anode 1 3 Cathode ~~—[~~ Anode 2 

|Qualified and PPAP Capable|Cathode|3<br>Cathode<br>~~—[~~|Cathode<br>~~—[~~|Cathode<br>~~—[~~|~~—[~~|
|---|---|---|---|---|---|
|**MAXIMUM RATINGS**||||||
|**Parameter**<br>**Symbol**<br>**Value**<br>**Unit**<br>Repetitive Peak Reverse Voltage<br>FES6D<br>FES6G<br>FES6J<br>VRRM<br>200<br>400<br>600<br>V<br>Average Forward Rectified Current<br>IF(AV)<br>6<br>A<br>Peak Forward Surge Current: 8.3 ms<br>Single Half Sine−Wave Superimposed<br>on Rated Load<br>IFSM<br>80<br>A<br>Operating Junction Temperature Range<br>TJ<br>−55 to<br>+175<br>°C<br>Storage Temperature Range<br>TSTG<br>−55 to<br>+175<br>°C<br>~~StH ~~|$Y<br>&Z<br>&3<br>*<br>|**MARKING DIAGRAM**<br>= ON Semiconductor Logo<br>= Assembly Plant Code<br>= Date Code (Year & Week)<br>= Specific Device Code<br>FES6D, FES6G, FES6J<br>$Y&Z&3<br>*<br> ~~9~~||||
|Stresses exceeding those listed in the Maximum Ratings table may damage the||||||
|device. If any of these limits are exceeded, device functionality should not be||||||
|assumed, damage may occur and reliability may be affected.||||||



**MARKING DIAGRAM** $Y&Z&3 * $Y = ON Semiconductor Logo &Z = Assembly Plant Code &3 = Date Code (Year & Week) * = Specific Device Code FES6D, FES6G, FES6J 

## **ORDERING INFORMATION** 

|**Part Number**|**Top Mark**|**Package**|**Shipping**†|
|---|---|---|---|
|FES6D|FES6D|TO−277 3L (with DAP Option only)|5000 / Tape & Reel|
|NRVFES6D*||||
|FES6G|FES6G|||
|NRVFES6G*||||
|FES6J|FES6J|||
|NRVFES6J*||||



- †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 

- *NRV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable. 

Publication Order Number: **FES6D/D** 

**1** 

© Semiconductor Components Industries, LLC, 2020 **April, 2020 − Rev. 4** 

## **FES6, NRVFES6 Series** 

**THERMAL CHARACTERISTICS** (Values are at TA = 25 ° C unless otherwise noted) (Note 1) 

|**THERMAL CHARACTERISTICS**(Values are at TA= 25°C unless otherwise noted) (Note 1)||||
|---|---|---|---|
|**Parameter**|**Symbol**|**Value**|**Unit**|
|Thermal Characteristics, Junction−to−Lead, Thermocouple Soldered to Cathode|�JL|6|°C/W|
|Thermal Resistance, Junction−to−Ambient|R�JA|100|°C/W|



1. Per JESD51−3 Recommended Thermal Test Board. 

**ELECTRICAL CHARACTERISTICS** (Values are at TA = 25 ° C unless otherwise noted) 

|**Symbol**|**Parameter**|**Conditions**|**Value**|**Value**|**Value**|**Unit**|
|---|---|---|---|---|---|---|
||||**FES6D**|**FES6G**|**FES6J**||
|VF|Maximum Instantaneous Forward<br>Voltage (Note 2)|IF= 6 A|1.05|1.20|2.2|V|
|||IF= 6 A, TJ= 125°C|0.90|1.00|1.80||
|IR|Maximum Reverse Current<br>at Rated VR|TJ= 25°C|2|||�A|
|||TJ= 125°C|200|500|||
|CJ|Typical Junction Capacitance|VR= 4 V, f = 1 MHz|60||45|pF|
|Trr|Typical Reverse Recovery Time|IF= 0.5 A, IR= 1 A, IRR= 0.25 A|25|||ns|
|||IF= 1 A, di/dt = 50 A/�s, VR= 30 V|45||||



Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Pulse test with PW = 300 � s, 1% duty cycle 

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**2** 

**FES6, NRVFES6 Series** 

## **TYPICAL CHARACTERISTICS** 

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10<br>FES6D<br>1<br>T A  = −55oCoCC<br>0.1 TA = 25oCA = 25oC = 25oCoCC<br>T A  = 75 o C<br>0.01<br>TA = 125oCA = 125oC = 125oCoCC<br>TA = 150A = 150 = 150 o C<br>0.001<br>0.0 0.2 0.4 0.6 0.8 1.0 1.2<br>VF − FORWARD VOLTAGE (V)F − FORWARD VOLTAGE (V) − FORWARD VOLTAGE (V)<br> − FORWARD CURRENT (A)IFIFF<br>**----- End of picture text -----**<br>


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10 10<br>FES6D FES6G<br>1 1<br>T A  = −55oCoCC T A  = −55oC<br>0.1 TA = 25oCA = 25oC = 25oCoCC 0.1 TA = 25 o C<br>T A  = 75 o C TA = 75 o C<br>0.01 TA = 125oCA = 125oC = 125oCoCC 0.01 TA = 125oC<br>TA = 150A = 150 = 150 o C T A  = 150 o C<br>0.001 0.001<br>0.0 0.2 0.4 0.6 0.8 1.0 1.2 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4<br>VF − FORWARD VOLTAGE (V)F − FORWARD VOLTAGE (V) − FORWARD VOLTAGE (V) VF − FORWARD VOLTAGE (V)<br>Fig 1. Typical Forward Characteristics for FES6D Fig 2. Typical Forward Characteristics for FES6G<br>10 100<br>FES6J T A  = 150oC T A  = 125oC TA = 75 o C FES6D<br>10<br>1<br>T A  = −55oC 1<br>0.1 0.1<br>TA = 25oC<br>TA = 75 o C 0.01<br>0.01<br>TA = 125oC 0.001<br>TA = 150 o C T A  = 25oC TA = −55oC<br>0.001 1E−4<br>0.0 0.5 1.0 1.5 2.0 2.5 0 50 100 150 200<br>VF − FORWARD VOLTAGE (V) VR − REVERSE VOLTAGE (V)<br>Fig 3. Typical Forward Characteristics for FES6J Fig 4. Typical Reverse Characteristics for FES6D<br>100 100<br>TA = 150oC TA = 125 o C FES6G TA = 150oC TA = 125 o C FES6J<br>10 10<br>1 1<br>TA = 75oC TA = 75oC<br>0.1 0.1<br>0.01 0.01<br>0.001 T A  = 25 o C T A  = −55 o C 0.001 T A  = 25 o C T A  = −55 o C<br>0 50  100 150 200 250 300 350 400 450 500 550 600 0 50 100 150 200 250 300 350 400 450 500 550 600<br>VR − REVERSE VOLTAGE (V) VR − REVERSE VOLTAGE (V)<br> − FORWARD CURRENT (A)IFIFF  − FORWARD CURRENT (A)IF<br>A)<br> − LEAKAGE CURRENT ( μ<br> − FORWARD CURRENT (A)IF IR<br> − LEAKAGE CURRENT (A)I μ R  − LEAKAGE CURRENT (A)I μ R<br>**----- End of picture text -----**<br>


**Fig 5. Typical Reverse Characteristics for FES6G** 

**Fig 6. Typical Reverse Characteristics for FES6J** 

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**3** 

**FES6, NRVFES6 Series** 

## **TYPICAL CHARACTERISTICS** 

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8 1000<br>f=1MHz<br>7<br>TL (Cathode)<br>6<br>100<br>5<br>4<br>FESD6J<br>3<br>10 FESD6D & FESD6G<br>2<br>TA<br>1<br>0 1<br>0 25 50 75 100 125 150 175 0.1 1 10 100<br>TEMPERATURE (oC) VR − REVERSE BIAS VOLTAGE (V)<br> − JUNCTION CAPACITANCE (pF)CJ<br> − AVERAGE FORWARD CURRENT (A)IF<br>**----- End of picture text -----**<br>


**Fig 7. Forward Current Derating Curve** 

**Fig 8. Typical Junction Capacitance** 

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**4** 

MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** 

**TO−277−3LD** CASE 340BQ ISSUE O 

DATE 30 SEP 2016 

## **DOCUMENT NUMBER: 98AON13861G** 

**DESCRIPTION: TO−277−3LD** 

Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed  versions are uncontrolled  except when stamped  “CONTROLLED COPY” in red. 

**PAGE 1 OF 1** 

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