FES10J

## **Is Now Part of** 

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## FES10D, FES10G, FES10J 

## 10 A, 200 V - 600 V Surface Mount Ultrafast Rectifiers 

## **Features** 

- Very Low Profile: Typical Height of 1.1 mm 

- Ultrafast Recovery Time 

- Low Forward Voltage Drop 

- Low Thermal Resistance 

- Very Stable Operation at Industrial Temperature, 150°C 

- RoHS Compliant 

- Green Molding Compound as per IEC61249 Standard 

- Lead Free in Compliance with EU RoHS 2011/65/EU Directive 

- Industrial Device Qualified per AEC−Q101 Standards 

- See authorized use policy 

## **MAXIMUM RATINGS** 

|**MAXIMUM RATINGS**||||
|---|---|---|---|
|**Parameter**|**Symbol**|**Value**|**Unit**|
|Repetitive Peak Reverse Voltage<br>FES10D<br>FES10G<br>FES10J|VRRM|200<br>400<br>600|V|
|Average Forward Rectified Current|IF(AV)|10|A|
|Peak Forward Surge Current: 8.3 ms<br>Single Half Sine−Wave Superimposed<br>on Rated Load|IFSM|150|A|
|Operating Junction Temperature Range|TJ|−55 to<br>+175|°C|
|Storage Temperature Range|TSTG|−55 to<br>+175|°C|



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**----- Start of picture text -----**<br>
www.onsemi.com<br>3<br>2<br>1<br>TO−277<br>3 LEAD<br>CASE 340BQ<br>Anode 1<br>3<br>Cathode [7]<br>Anode 2<br>**----- End of picture text -----**<br>


## **ORDERING INFORMATION** 

See detailed ordering and shipping information on page 6 of this data sheet. 

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 

Publication Order Number: **FES10D/D** 

**1** 

© Semiconductor Components Industries, LLC, 2016 **June, 2017 − Rev. 2** 

**FES10D, FES10G, FES10J** 

**THERMAL CHARACTERISTICS** (Values are at TA = 25 ° C unless otherwise noted) (Note 1) 

|**THERMAL CHARACTERISTICS**(Values are at TA= 25°C unless otherwise noted) (Note 1)||||
|---|---|---|---|
|**Parameter**|**Symbol**|**Value**|**Unit**|
|Thermal Characteristics, Junction−to−Lead, Thermocouple Soldered to Cathode|�JL|6|°C/W|
|Thermal Resistance, Junction−to−Ambient|R�JA|100|°C/W|



1. Per JESD51−3 Recommended Thermal Test Board. 

**ELECTRICAL CHARACTERISTICS** (Values are at TA = 25 ° C unless otherwise noted) 

|**Symbol**|**Parameter**|**Conditions**|**Value**|**Value**|**Value**|**Unit**|
|---|---|---|---|---|---|---|
||||**FES10D**|**FES10G**|**FES10J**||
|VF|Maximum Instantaneous Forward<br>Voltage (Note 2)|IF= 10 A|0.95|1.20|1.80|V|
|||IF= 10 A, TJ= 125°C|0.86|1.00|−||
|IR|Maximum Reverse Current<br>at Rated VR|TJ= 25°C|5|||�A|
|||TJ= 125°C|250|500|||
|CJ|Typical Junction Capacitance|VR= 4 V, f = 1 MHz|140|||pF|
|Trr|Typical Reverse Recovery Time|IF= 0.5 A, IR= 1 A, IRR= 0.25 A|30|||ns|
|||IF= 1 A, di/dt = 50 A/�s, VR= 30 A|40||||



Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Pulse test with PW = 300 � s, 1% duty cycle 

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**2** 

**FES10D, FES10G, FES10J** 

## **TYPICAL CHARACTERISTICS** 

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**----- Start of picture text -----**<br>
10 10<br>FES10D FES10G<br>1 1<br>TA = −55 o C T A  = −55oC<br>0.1 TA = 25oC 0.1 TA = 25oC<br>T A  = 75 o C T A  = 75 o C<br>0.01 TA = 125oC 0.01 TA = 125oC<br>T A  = 150 o C T A  = 150 o C<br>0.001 0.001<br>0.0 0.2 0.4 0.6 0.8 1.0 1.2 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4<br>VF − FORWARD VOLTAGE (V) VF − FORWARD VOLTAGE (V)<br> − FORWARD CURRENT (A)IF  − FORWARD CURRENT (A)IF<br>**----- End of picture text -----**<br>


**Fig 1. Typical Forward Characteristics for FES10D** 

**Fig 2. Typical Forward Characteristics for FES10G** 

**==> picture [461 x 372] intentionally omitted <==**

**----- Start of picture text -----**<br>
10 100<br>FES10J T A  = 150oC TA = 125oC TA = 75oC FES10D<br>10<br>1<br>T A  = −55 o C 1<br>0.1 TA = 25oC 0.1<br>TA = 75 o C 0.01<br>0.01<br>TA = 125oC 0.001<br>TA = 150 o C TA = 25 o C T A  = −55oC<br>0.001 1E−4<br>0.0 0.5 1.0 1.5 2.0 0 20 40 60 80 100 120 140 160 180 200<br>VF − FORWARD VOLTAGE (V) VR − REVERSE VOLTAGE (V)<br>Fig 3. Typical Forward Characteristics for FES10J Fig 4. Typical Reverse Characteristics for FES10D<br>100 100<br>TA = 150oC TA = 125oC FES10G T A  = 150oC T A  = 125oC FES10J<br>10 10<br>1 1<br>0.1 0.1<br>0.01 0.01<br>0.001 0.001 TA = 75 o C<br>TA = 75 o C T A  = 25oC T A  = −55oC TA = −55 o C TA = 25oC<br>1E−4 1E−4<br>0 50 100 150 200 250 300 350 400 0 50 100 150 200 250 300 350 400 450 500 550 600<br>VR − REVERSE VOLTAGE (V) VR − REVERSE VOLTAGE (V)<br>Fig 5. Typical Reverse Characteristics for FES10G Fig 6. Typical Reverse Characteristics for FES10J<br>A)<br> − LEAKAGE CURRENT ( μ<br> − FORWARD CURRENT (A)IF IR<br>A) A)<br> − LEAKAGE CURRENT ( μ  − LEAKAGE CURRENT ( μ<br>IR IR<br>**----- End of picture text -----**<br>


**www.onsemi.com** 

**3** 

**FES10D, FES10G, FES10J** 

## **TYPICAL CHARACTERISTICS** 

**==> picture [445 x 163] intentionally omitted <==**

**----- Start of picture text -----**<br>
12 1000<br>11 T L  (Cathode) f=1MHz<br>10<br>9<br>8<br>7<br>6 100<br>5<br>4<br>3<br>2 T A<br>1<br>0 10<br>0 25 50 75 100 125 150 175 0.1 1 10 100<br>TEMPERATURE (oC) VR − REVERSE BIAS VOLTAGE (V)<br> − JUNCTION CAPACITANCE (pF)CJ<br> − AVERAGE FORWARD CURRENT (A)IF<br>**----- End of picture text -----**<br>


**Fig 7. Forward Current Derating Curve** 

**Fig 8. Typical Junction Capacitance** 

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**4** 

**FES10D, FES10G, FES10J** 

## **PACKAGE DIMENSIONS** 

**TO−277−3LD** CASE 340BQ ISSUE O 

**www.onsemi.com** 

**5** 

**FES10D, FES10G, FES10J** 

## **ORDERING INFORMATION** 

|**Part Number**|**Top Mark**|**Package**|**Packing Method**|
|---|---|---|---|
|FES10D|FES10D|TO−277 3L (with DAP Option only)|Tape & Reel|
|FES10G|FES10G|TO−277 3L (with DAP Option only)|Tape & Reel|
|FES10J|FES10J|TO−277 3L (with DAP Option only)|Tape & Reel|



ON Semiconductor and      are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 

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## **LITERATURE FULFILLMENT** : 

◊ 

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**FES10D/D** 

**6** 

ON Semiconductor and      are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 

## **PUBLICATION ORDERING INFORMATION** 

**N. American Technical Support** : 800−282−9855 Toll Free **ON Semiconductor Website** : **www.onsemi.com** USA/Canada 

## **LITERATURE FULFILLMENT** : 

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© Semiconductor Components Industries, LLC 

www.onsemi.com 

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**1**