FES10G
Fast / Ultrafast Diode, 400 V, 10 A, Single, 1.2 V, 40 ns, 150 A
- Manufacturer: ONSEMI
- Product type: Fast & Ultrafast Recovery Rectifier Diodes
- SVHC: Lead (25-Jun-2025)
- No. of Pins: 3 Pin
- Product Range: -
- Qualification: AEC-Q101
- Diode Case Style: TO-277
- Diode Configuration: Single
- Forward Voltage Max: 1.2V
- Forward Surge Current: 150A
- Reverse Recovery Time: 40ns
- Average Forward Current: 10A
- Operating Temperature Max: 175°C
- Repetitive Peak Reverse Voltage: 400V
| Delivery and price | |
|---|---|
| Units per pack | 5000 |
| Price | 0.404 € |
| Current stock | 10+ |
| Lead time | 30 days |
**Share Feedback DATA SHEET** Your Opinion Matters **www.onsemi.com** onsemi. © ~~ee~~ Ultrafast Rectifiers, 3 A Surface Mount, 10 A, 200 V - 600 V 2 ~~a~~ 1 FES10D, FES10G, FES10J **TO−277−3LD CASE 340BQ** ## **Features** - Very Low Profile: Typical Height of 1.1 mm - Ultrafast Recovery Time - Low Forward Voltage Drop - Low Thermal Resistance - Very Stable Operation at Industrial Temperature, 150 C - RoHS Compliant - Green Molding Compound as per IEC61249 Standard - Lead Free in Compliance with EU RoHS 2011/65/EU Directive - With DAP Option Only ## **MARKING DIAGRAM** $Y&Z&3 * ~~||~~ $Y = **onsemi** Logo &Z = Assembly Plant Code &3 = Date Code (Year & Week) * = Specific Device Code FES10D, FES10G, FES10J - Industrial Device Qualified per AEC−Q101 Standards - See authorized use policy **MAXIMUM RATINGS** **Parameter Symbol Value Unit** Repetitive Peak Reverse Voltage VRRM V FES10D 200 FES10G 400 FES10J 600 Average Forward Rectified Current IF(AV) 10 A Peak Forward Surge Current: 8.3 ms IFSM 150 A Single Half Sine−Wave Superimposed on Rated Load Operating Junction Temperature Range TJ −55 to C +175 Storage Temperature Range TSTG −55 to C +175 ~~HH~~ Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. Anode 1 3 Cathode Anode 2 ## **ORDERING INFORMATION** See detailed ordering and shipping information on page 2 of this data sheet. Publication Order Number: **FES10D/D** **1** Semiconductor Components Industries, LLC, 2016 **September, 2024 − Rev. 5** **FES10D, FES10G, FES10J** ## **ORDERING INFORMATION** |**Part Number**|**Top Mark**|**Package**|**Shipping**†| |---|---|---|---| |FES10D|FES10D|TO−277 3L (with DAP Option only)|5000 / Tape & Reel| |FES10G|FES10G|TO−277 3L (with DAP Option only)|5000 / Tape & Reel| |FES10J|FES10J|TO−277 3L (with DAP Option only)|5000 / Tape & Reel| †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. **THERMAL CHARACTERISTICS** (Values are at TA = 25C unless otherwise noted) (Note 1) |**THERMAL CHARACTERISTICS**(Values are at TA = 25C unless otherwise noted) (Note 1)A = 25C unless otherwise noted) (Note 1)= 25C unless otherwise noted) (Note 1)C unless otherwise noted) (Note 1)C unless otherwise noted) (Note 1)|||| |---|---|---|---| |**Parameter**|**Symbol**|**Value**|**Unit**| |Thermal Characteristics, Junction−to−Lead, Thermocouple Soldered to Cathode<br>~~OO~~|JL<br>~~OO~~|6<br>~~OO~~|C/W<br>~~OO~~| |Thermal Resistance, Junction−to−Ambient<br>~~a~~|R JA<br>~~a~~|100<br>~~a~~|C/W<br>~~a~~| 1. Per JESD51−3 Recommended Thermal Test Board. **ELECTRICAL CHARACTERISTICS** (Values are at TA = 25C unless otherwise noted) **Value Symbol Parameter Conditions FES10D FES10G FES10J Unit** ~~i~~ VF Maximum Instantaneous Forward IF = 10 A 0.95 1.20 1.80 V Voltage (Note 2) IF = 10 A, TJ = 125C 0.86 1.00 − ~~ee e~~ IR Maximum Reverse Current TJ = 25 ~~es~~ C ~~ee ee~~ 5 ~~ee~~ A at Rated VR TJ = 125C 250 500 CJ Typical Junction Capacitance VR = 4 V, f = 1 MHz 140 pF ~~a~~ Trr Typical Reverse Recovery Time IF = 0.5 A, IR = 1 A, IRR = 0.25 A 30 ns IF = 1 A, di/dt = 50 A/ s, VR = 30 A 40 Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Pulse test with PW = 300 s, 1% duty cycle **www.onsemi.com** ~~—~~ **2** **Share Feedback** Your Opinion Matters **FES10D, FES10G, FES10J** ## **TYPICAL CHARACTERISTICS** **==> picture [460 x 162] intentionally omitted <==** **----- Start of picture text -----**<br> 10 10<br>FES10D FES10G<br>1 1<br>T A = −55oC T A = −55 o C<br>0.1 TA = 25oC 0.1 TA = 25oC<br>T A = 75 o C T A = 75 o C<br>0.01 TA = 125oC 0.01 TA = 125oC<br>T A = 150 o C TA = 150 o C<br>0.001 0.001<br>0.0 0.2 0.4 0.6 0.8 1.0 1.2 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4<br>VF − FORWARD VOLTAGE (V) VF − FORWARD VOLTAGE (V)<br> − FORWARD CURRENT (A)IF − FORWARD CURRENT (A)IF<br>**----- End of picture text -----**<br> **Fig 1. Typical Forward Characteristics for FES10D** **Fig 2. Typical Forward Characteristics for FES10G** **==> picture [461 x 372] intentionally omitted <==** **----- Start of picture text -----**<br> 10 100<br>FES10J TA = 150oC TA = 125oC TA = 75oC FES10D<br>10<br>1<br>T A = −55oC 1<br>0.1 TA = 25oC 0.1<br>T A = 75oC 0.01<br>0.01<br>TA = 125oC 0.001<br>T A = 150oC TA = 25oC TA = −55oC<br>0.001 1E−4<br>0.0 0.5 1.0 1.5 2.0 0 20 40 60 80 100 120 140 160 180 200<br>VF − FORWARD VOLTAGE (V) VR − REVERSE VOLTAGE (V)<br>Fig 3. Typical Forward Characteristics for FES10J Fig 4. Typical Reverse Characteristics for FES10D<br>100 100<br>TA = 150oC TA = 125oC FES10G TA = 150oC T A = 125oC FES10J<br>10 10<br>1 1<br>0.1 0.1<br>0.01 0.01<br>0.001 0.001 TA = 75 o C<br>TA = 75oC T A = 25oC T A = −55oC TA = −55oC TA = 25oC<br>1E−4 1E−4<br>0 50 100 150 200 250 300 350 400 0 50 100 150 200 250 300 350 400 450 500 550 600<br>VR − REVERSE VOLTAGE (V) VR − REVERSE VOLTAGE (V)<br>Fig 5. Typical Reverse Characteristics for FES10G Fig 6. Typical Reverse Characteristics for FES10J<br>A)<br> − LEAKAGE CURRENT (<br> − FORWARD CURRENT (A)IF IR<br>A) A)<br> − LEAKAGE CURRENT ( − LEAKAGE CURRENT (<br>IR IR<br>**----- End of picture text -----**<br> **Fig 6. Typical Reverse Characteristics for FES10J** **www.onsemi.com** **Share Feedback** Your Opinion Matters **3** **FES10D, FES10G, FES10J** ## **TYPICAL CHARACTERISTICS** **==> picture [445 x 175] intentionally omitted <==** **----- Start of picture text -----**<br> 12 1000<br>11 T L (Cathode) f=1MHz<br>10<br>9<br>8<br>7<br>6 100<br>5<br>4<br>3<br>2 T A<br>1<br>0 ae: 10<br>0 25 50 75 100 125 150 175 0.1 1 10 100<br>TEMPERATURE (oC) VR − REVERSE BIAS VOLTAGE (V)<br>Fig 7. Forward Current Derating Curve Fig 8. Typical Junction Capacitance<br> − JUNCTION CAPACITANCE (pF)CJ<br> − AVERAGE FORWARD CURRENT (A)IF<br>**----- End of picture text -----**<br> **www.onsemi.com** **Share Feedback** Your Opinion Matters **4** MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** ## **TO−277−3 5.91x4.44x1.10, 2.10P** **==> picture [56 x 18] intentionally omitted <==** **----- Start of picture text -----**<br> CASE 340BQ<br>ISSUE A<br>**----- End of picture text -----**<br> ## DATE 16 APR 2026 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. **DOCUMENT NUMBER: 98AON13861G** **DESCRIPTION: TO−277−3 5.91x4.44x1.10, 2.10P** **PAGE 1 OF 1** **onsemi** and are trademarks of Semiconductor Components Industries, LLC dba **onsemi** or its subsidiaries in the United States and/or other countries. **onsemi** reserves the right to make changes without further notice to any products herein. **onsemi** makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does **onsemi** assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. **onsemi** does not convey any license under its patent rights nor the rights of others. www.onsemi.com © Semiconductor Components Industries, LLC, 2016 **onsemi** , , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “ **onsemi** ” or its affiliates and/or subsidiaries in the United States and/or other countries. **onsemi** owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. 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Buyer is responsible for its products and applications using **onsemi** products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by **onsemi** . “Typical” parameters which may be provided in **onsemi** data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. **onsemi** does not convey any license under any of its intellectual property rights nor the rights of others. **onsemi** products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. 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This literature is subject to all applicable copyright laws and is not for resale in any manner. ## **ADDITIONAL INFORMATION** **TECHNICAL PUBLICATIONS** : **ONLINE SUPPORT** : www.onsemi.com/support **Technical Library:** www.onsemi.com/design/resources/technical−documentation **For additional information, please contact your local Sales Representative at onsemi Website:** www.onsemi.com www.onsemi.com/support/sales **==> picture [232 x 43] intentionally omitted <==**
Updated at June 8, 2026
onsemi is a premier global supplier of intelligent power and sensing technologies, driving disruptive innovations across the automotive, industrial, and cloud infrastructure markets. Recognized for their commitment to sustainability and reliable supply chains, the company accelerates advancements in vehicle electrification, industrial automation, and 5G networks by solving the industry's most complex design challenges. At the core of their portfolio is an industry-leading selection of discrete semiconductors. This extensive range features thousands of high-performance bipolar transistors, single and dual MOSFETs, and a comprehensive array of diodes, including Zener, Schottky, and fast-recovery rectifiers. Engineered for superior thermal performance and energy efficiency, these foundational components are critical for demanding power conversion, switching, and signal conditioning applications. Beyond essential discretes, onsemi provides a robust suite of advanced power management and circuit protection solutions. Their lineup includes intelligent power modules, single IGBTs, and transient voltage suppression (TVS) diodes designed to safeguard sensitive circuitry. Complimented by integrated passive filters, AC/DC LED driver ICs, and specialized sub-2.4GHz RF transceivers, onsemi equips engineers with the scalable, high-quality technologies needed to build a cleaner, smarter, and more connected world.
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