FDS9958

## **Is Now Part of** 

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**July 2007** tm 

## **FDS9958** 

## **Dual P-Channel PowerTrench[®] MOSFET** 

## **-60V, -2.9A, 105m** Ω 

## **Features** 

Max rDS(on) =105mΩ at VGS = -10V, ID = -2.9A Max rDS(on) =135mΩ at VGS = -4.5V, ID = -2.5A RoHS Compliant 

## **General Description** 

These P-channel logic level specified MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench[®] process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. 

These devices are well suited for portable electronics applications: load switching and power management, battery charging and protection circuits. 

## **Applications** 

Load Switch 

Power Management 

|Pin 1<br>**D1**<br>**D1**<br>**D2**<br>**D2**<br>**S2**<br>**S1**<br>**G1**<br>oe|Pin 1<br>**D1**<br>**D1**<br>**D2**<br>**D2**<br>**S2**<br>**S1**<br>**G1**<br>oe|**G2**|**D2**<br>**D2**<br>**D1**<br>**D1**|**Q2**<br>**Q1**<br>**G2**<br>**S1**<br>**G1**<br>**S2**<br>**5**<br>**6**<br>**7**<br>**8**<br>**3**<br>**2**<br>**1**<br>**4**<br>of~~@rk~~|**Q2**<br>**Q1**<br>**G2**<br>**S1**<br>**G1**<br>**S2**<br>**5**<br>**6**<br>**7**<br>**8**<br>**3**<br>**2**<br>**1**<br>**4**<br>of~~@rk~~|**Q2**<br>**Q1**<br>**G2**<br>**S1**<br>**G1**<br>**S2**<br>**5**<br>**6**<br>**7**<br>**8**<br>**3**<br>**2**<br>**1**<br>**4**<br>of~~@rk~~|**Q2**<br>**Q1**<br>**G2**<br>**S1**<br>**G1**<br>**S2**<br>**5**<br>**6**<br>**7**<br>**8**<br>**3**<br>**2**<br>**1**<br>**4**<br>of~~@rk~~||
|---|---|---|---|---|---|---|---|---|
|**SO-8**|||||||||
|**MOSFET Maximum Ratings  **|TA= 25°C unless otherwise noted||= 25°C unless otherwise noted||||||
|**Symbol**|**Parameter**|||||**Ratings**||**Units**|
|VDS<br>Drain to Source Voltage|||||||-60|V|
|VGS<br>Gate to Source Voltage|||||||±20|V|
|ID<br>Drain Current   -Continuous<br>-Pulsed||Drain Current   -Continuous<br>-Pulsed|Drain Current   -Continuous<br>-Pulsed|Drain Current   -Continuous<br>-Pulsed|Drain Current   -Continuous(Note 1a)<br>-Pulsed||-2.9<br>-12|A|
|EAS<br>Single Pulse Avalanche Energy|||||(Note 3)||54|mJ|
|Power Dissipation for Dual O|ation for Dual Operation||||||2||
|PD<br>Power Dissipation|ation|ation|ation|ation|ation(Note 1a)||1.6|W|
|Power Dissipation|ation|ation|ation|ation|ation(Note 1b)||0.9||
|TJ, TSTG<br>Operatingand Storage Junction Temperature Range||||||-55 to +150|-55 to +150|°C|



## **MOSFET Maximum Ratings** TA 

**Thermal Characteristics** 

RθJC Thermal Resistance, Junction to Case 40 °C/W ~~ae~~ RθJA Thermal Resistance, Junction to Ambient                                                 (Note 1a) 78 **Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity** FDS9958 FDS9958 SO-8 330mm 12mm 2500units ~~ee~~ 

©2007 Fairchild Semiconductor Corporation **1** FDS9958 Rev.C 

www.fairchildsemi.com 

**Electrical Characteristics** TJ = 25°C unless otherwise noted 

|**Symbol**<br>**Parameter**<br>**Test Conditions**<br>**Min**<br>**Typ**<br>**Max**<br>**Units**<br>**Off Characteristics**<br>BVDSS<br>Drain to Source Breakdown Voltage<br>ID= -250µA, VGS= 0V<br>-60<br>V<br>∆BVDSS<br>∆TJ<br>Breakdown Voltage Temperature<br>Coefficient<br>ID= -250µA, referenced to 25°C<br>-52<br>mV/°C<br>IDSS<br>Zero Gate Voltage Drain Current<br>VDS= -48V,<br>-1<br>µA<br>VGS = 0V<br>TJ= 125°C<br>-100<br>IGSS<br>Gate to Source Leakage Current<br>VGS= ±20V, VDS = 0V<br>±100<br>nA<br>**On Characteristics**<br>VGS(th)<br>Gate to Source Threshold Voltage<br>VGS= VDS,  ID= -250µA<br>-1.0<br>-1.6<br>-3.0<br>V<br>∆VGS(th)<br> ∆TJ<br>Gate to Source Threshold Voltage<br>Temperature Coefficient<br>ID= -250µA, referenced to 25°C<br>4<br>mV/°C<br>rDS(on)<br>Static Drain to Source On Resistance<br>VGS= -10V,  ID= -2.9A<br>82<br>105<br>mΩ<br>VGS= -4.5V,   ID= -2.5A<br>103<br>135<br>VGS= -10V,  ID= -2.9A, TJ= 125°C<br>131<br>190<br>gFS<br>Forward Transconductance<br>VDD= -5V,  ID= -2.9A<br>7.7<br>S<br>**Dynamic Characteristics**<br>Ciss<br>Input Capacitance<br>VDS= -30V, VGS= 0V,<br>f = 1MHz<br>765<br>1020<br>pF<br>Coss<br>Output Capacitance<br>90<br>120<br>pF<br>Crss<br>Reverse Transfer Capacitance<br>40<br>65<br>pF<br>**Switching Characteristics**<br>~~=~~<br>~~—-_-—s~~<br>~~——~~<br>~~=~~|**Symbol**<br>**Parameter**<br>**Test Conditions**<br>**Min**<br>**Typ**<br>**Max**<br>**Units**<br>**Off Characteristics**<br>BVDSS<br>Drain to Source Breakdown Voltage<br>ID= -250µA, VGS= 0V<br>-60<br>V<br>∆BVDSS<br>∆TJ<br>Breakdown Voltage Temperature<br>Coefficient<br>ID= -250µA, referenced to 25°C<br>-52<br>mV/°C<br>IDSS<br>Zero Gate Voltage Drain Current<br>VDS= -48V,<br>-1<br>µA<br>VGS = 0V<br>TJ= 125°C<br>-100<br>IGSS<br>Gate to Source Leakage Current<br>VGS= ±20V, VDS = 0V<br>±100<br>nA<br>**On Characteristics**<br>VGS(th)<br>Gate to Source Threshold Voltage<br>VGS= VDS,  ID= -250µA<br>-1.0<br>-1.6<br>-3.0<br>V<br>∆VGS(th)<br> ∆TJ<br>Gate to Source Threshold Voltage<br>Temperature Coefficient<br>ID= -250µA, referenced to 25°C<br>4<br>mV/°C<br>rDS(on)<br>Static Drain to Source On Resistance<br>VGS= -10V,  ID= -2.9A<br>82<br>105<br>mΩ<br>VGS= -4.5V,   ID= -2.5A<br>103<br>135<br>VGS= -10V,  ID= -2.9A, TJ= 125°C<br>131<br>190<br>gFS<br>Forward Transconductance<br>VDD= -5V,  ID= -2.9A<br>7.7<br>S<br>**Dynamic Characteristics**<br>Ciss<br>Input Capacitance<br>VDS= -30V, VGS= 0V,<br>f = 1MHz<br>765<br>1020<br>pF<br>Coss<br>Output Capacitance<br>90<br>120<br>pF<br>Crss<br>Reverse Transfer Capacitance<br>40<br>65<br>pF<br>**Switching Characteristics**<br>~~=~~<br>~~—-_-—s~~<br>~~——~~<br>~~=~~|
|---|---|
|td(on)<br>Turn-On DelayTime<br>VDD= -30V, ID= -2.9A,<br>VGS= -10V, RGEN= 6Ω<br>6<br>12<br>tr<br>Rise Time<br>3<br>10<br>td(off)<br>Turn-Off DelayTime<br>27<br>43|ns<br>ns<br>ns|
|tf<br>Fall Time<br>6<br>12|ns|
|Qg<br>Total Gate Charge<br>VGS = 0V to -10V<br>VDD= -30V,<br>ID= -2.9A<br>16<br>23<br>nC<br>Qg<br>Total Gate Charge<br>VGS = 0V to -4.5V<br>8<br>12<br>nC<br>Qgs<br>Gate to Source Charge<br>2<br>nC<br>Qgd<br>Gate to Drain “Miller” Charge<br>3<br>nC<br>~~Sa~~||
|**Drain-Source Diode Characteristics**<br>VSD<br>Source to Drain Diode  Forward Voltage<br>VGS = 0V, IS = -1.3A(Note 2)<br>-0.8<br>-1.2<br>V<br>trr<br>Reverse RecoveryTime<br>IF= -2.9A, di/dt = 100A/µs<br>26<br>42<br>ns<br>Qrr<br>Reverse RecoveryCharge<br>21<br>35<br>nC<br>NOTES:<br>1. RθJAis determined with the device mounted on a 1in2pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJCis guaranteed by design while RθCAis determined by<br>~~———~~<br>~~=~~||
|the user's board design.||
|b) 135°C/W when<br>mounted on a<br>minimun pad<br>a) 78°C/W when<br>mounted on a  1 in2<br>pad of 2 oz copper<br>—e||



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2. Pulse Test: Pulse Width < 30 0 µs, Duty cycle < 2.0%. 3. UIL condition: Starting TJ = 25°C, L = 3mH, IAS = 6A, VDD = 60V, VGS = 10V. 

©2007 Fairchild Semiconductor Corporation FDS9958 Rev.C 

**2** 

## **Typical Characteristics** TJ = 25°C unless otherwise noted 

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12 2.5<br>VGS = -10V VGS = -4V<br>10 VGS = -3.5V VGS = -3V<br>VGS = -5V 2.0 VGS = -3.5V<br>8<br>VGS = -4.5V VGS = -4V<br>6 1.5<br>VGS =  -3V<br>4 VGS = -4.5V VGS =  -5V<br>1.0<br>2 PULSE DURATION = 300DUTY CYCLE = 2.0%MAX µ s PULSE DURATION = 300 µ s VGS = -10V<br>DUTY CYCLE = 2.0%MAX<br>0 0.5<br>0 1 2 3 4 0 2 4 6 8 10 12<br>-VDS, DRAIN TO SOURCE VOLTAGE (V) -ID, DRAIN CURRENT(A)<br>Figure 1.  On-Region Characteristics Figure 2.  Normalized On-Resistance<br>vs Drain Current and Gate Voltage<br>1.8 240<br> ID = -2.9A ID = -2.9A PULSE DURATION = 300DUTY CYCLE = 2.0%MAX µ s<br>1.6 VGS = -10V 210<br>1.4 180<br>TJ = 125 [o] C<br>1.2 150<br>1.0 120<br>TJ = 25 [o] C<br>90<br>0.8<br>60<br>0.6<br>-75 -50 -25 0 25 50 75 100 125 150 2 4 6 8 10<br>TJ, JUNCTION TEMPERATURE ( [o] C) -VGS, GATE TO SOURCE VOLTAGE (V)<br>Figure 3.  Normalized  On- Resistance                                         Figure 4.   On-Resistance vs  Gate to<br>vs Junction Temperature Source Voltage<br>12 20<br>PULSE DURATION = 300 µ s 10<br>10 DUTY CYCLE = 2.0%MAX VGS = 0V<br>VDD = -5V 1<br>8 TJ = 150 [o] C<br>6 0.1 TJ = 25 [o] C<br>4 TJ = 150 [o] C TJ = -55 [o] C<br>0.01<br>TJ = 25 [o] C<br>2<br>TJ = -55 [o] C<br>1E-3<br>0 0.0 0.2 0.4 0.6 0.8 1.0 1.2<br>0 1 2 3 4 5<br>-VSD, BODY DIODE FORWARD VOLTAGE (V)<br>-VGS, GATE TO SOURCE VOLTAGE (V)<br>Figure 5.  Transfer Characteristics Figure 6.    Source to Drain  Diode<br>Forward Voltage vs Source Current<br>NORMALIZED<br>DRAIN CURRENT (A)<br>,<br>D<br>-I<br>DRAIN TO SOURCE ON-RESISTANCE<br>)<br>Ω<br>m<br>(<br>NORMALIZED , DRAIN TO<br>rDS(on)<br> DRAIN TO SOURCE ON-RESISTANCE SOURCE ON-RESISTANCE<br>, DRAIN CURRENT (A)<br>-ID , REVERSE DRAIN CURRENT (A)S<br>-I<br>**----- End of picture text -----**<br>


www.fairchildsemi.com 

©2007 Fairchild Semiconductor Corporation FDS9958 Rev.C 

**3** 

## **Typical Characteristics** TJ = 25°C unless otherwise noted 

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10 2000<br>ID = -2.9A 1000<br>8 VDD = -20V Ciss<br>6<br>VDD = -30V<br>4 100 Coss<br>VDD = -40V<br>Crss<br>2 f = 1MHz<br>VGS = 0V<br>0 10<br>0 5 10 15 20 0.1 1 10 60<br>Qg, GATE CHARGE(nC) -VDS, DRAIN TO SOURCE VOLTAGE (V)<br>Figure 7.  Gate Charge Characteristics Figure 8.  Capacitance vs Drain<br>to Source Voltage<br>4 3.0<br>2.5<br>3<br>2.0<br>VGS = -4.5V VGS = -10V<br>2 TJ = 25 [o] C 1.5<br>TJ = 125 [o] C 1.0<br>R θ JA = 78oC/W<br>0.5<br>1 0.0<br>0.01 0.1 1 10 100 25 50 75 100 125 150<br>tAV, TIME IN AVALANCHE(ms) TA, AMBIENT TEMPERATURE (oC)<br>Figure 9. Unclamped Inductive                                  Figure 10.  Maximum Continuous Drain<br>Switching Capability Current  vs Ambient Temperature<br>20 200<br>10 0.1ms 100 VGS = -10V SINGLE PULSE<br>R θ JA = 135 [o] C/W<br>1ms TA = 25 [o] C<br>1<br>THIS AREA IS  10ms 10<br>LIMITED BY r<br>DS(on) 100ms<br>0.1 SINGLE PULSE<br>TJ = MAX RATED 1s<br>R θ JA = 135 [o] C/W 10s 1<br>TA = 25 [o] C DC<br>0.01 0.5<br>0.1 1 10 100 200 10-3 10-2 10-1 100 101 102 103<br>-VDS, DRAIN to SOURCE VOLTAGE (V) t, PULSE WIDTH (s)<br>Figure 11.  Forward Bias Safe                                      Figure 12.   Single  Pulse Maximum<br>Operating Area  Power  Dissipation<br>CAPACITANCE (pF)<br>, GATE TO SOURCE VOLTAGE(V)<br>GS<br>-V<br>DRAIN CURRENT (A)<br>,<br>D<br>-I<br>, AVALANCHE CURRENT(A)<br>AS<br>-I<br>, DRAIN CURRENT (A)<br>D<br> -I<br>PEAK TRANSIENT POWER (W)<br>P)(PK,<br>**----- End of picture text -----**<br>


www.fairchildsemi.com 

©2007 Fairchild Semiconductor Corporation FDS9958 Rev.C 

**4** 

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Typical Characteristics  TJ = 25°C unless otherwise noted<br>2<br>DUTY CYCLE-DESCENDING ORDER<br>1<br>D = 0.5<br>      0.2<br>      0.1<br>      0.05 PDM<br>0.1       0.02<br>      0.01<br>t1<br>t2<br>NOTES:<br>SINGLE PULSE DUTY FACTOR: D = t1/t2<br>0.01 R θ JA = 135 [o] C/W PEAK TJ = PDM x Z θ JA x R θ JA + TA<br>0.005<br>10-3 10-2 10-1 100 101 102 103<br>t, RECTANGULAR PULSE DURATION (s)<br>Figure 13.  Transient Thermal Response Curve<br>Z JA θ<br>IMPEDANCE,<br>NORMALIZED THERMAL<br>**----- End of picture text -----**<br>


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## **TRADEMARKS** 

The following are registered and unregistered trademarks and service marks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. 

|ACEx®|Green FPS™|Green FPS™|Power247®|SuperSOT™-8|
|---|---|---|---|---|
|Build it Now™|Green FPS™ e-Series™||POWEREDGE®|SyncFET™|
|CorePLUS™|GTO™||Power-SPM™|The Power Franchise®|
|_CROSSVOLT_™<br>CTL™|_i-Lo_™<br>IntelliMAX™||PowerTrench®<br>Programmable Active Droop™|Dower<br>Pranve|
|Current Transfer Logic™|ISOPLANAR™||QFET®|TinyBoost™|
|EcoSPARK®|MegaBuck™||QS™|TinyBuck™|
|Fairchild®<br>f°|MICROCOUPLER™<br>MicroFET™||QT Optoelectronics™<br>Quiet Series™|TinyLogic®<br>TINYOPTO™|
|Fairchild Semiconductor®|MicroPak™||RapidConfigure™|TinyPower™|
|FACT Quiet Series™|Motion-SPM™||SMART START™|TinyPWM™|
|FACT®|OPTOLOGIC®||SPM®|TinyWire™|
|FAST®|OPTOPLANAR®||STEALTH™|µSerDes™|
|FastvCore™<br>FPS™|®<br>PDP-SPM™||SuperFET™<br>SuperSOT™-3|UHC®<br>UniFET™|
|FRFET®|Power220®||SuperSOT™-6|VCX™|
|Global Power ResourceSM|||||



## **DISCLAIMER** 

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. 

## **LIFE SUPPORT POLICY** 

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. 

As used herein: 

1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 

2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. 

## **PRODUCT STATUS DEFINITIONS** 

## **Definition of Terms** 

|**Definition of Terms**|||
|---|---|---|
|**Datasheet Identification**|**Product Status**|**Definition**|
|Advance Information|Formative or In Design|This datasheet contains the design specifications for product development.<br>Specifications may change in any manner without notice.|
|Preliminary|First Production|This datasheet contains preliminary data; supplementary data will be pub-<br>lished at a later date. Fairchild Semiconductor reserves the right to make<br>changes at any time without notice to improve design.|
|No Identification Needed|Full Production|This datasheet contains final specifications. Fairchild Semiconductor reserves<br>the right to make changes at any time without notice to improve design.|
|Obsolete|Not In Production|This datasheet contains specifications on a product that has been discontin-<br>ued by Fairchild semiconductor. The datasheet is printed for reference infor-<br>mation only.|



Rev. I30 

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