FDS9958-F085

## **- FDS9958 F085** 

## **Dual P-Channel PowerTrench[®] MOSFET -60V, -2.9A, 105m** Ω 

## **General Description** 

## **Features** 

These P-channel logic level specified MOSFETs are produced using ON Semiconductor’s advanced PowerTrench[®] process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. 

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Max rDS(on) =105mΩ at VGS = -10V, ID = -2.9A<br>Max rDS(on) =135mΩ at VGS = -4.5V, ID = -2.5A<br>switching performance.<br>Qualified to AEC Q101<br>RoHS Compliant<br>charging and protection circuits.<br>Applications<br>Load Switch<br>Power Management<br>D2<br>D2<br>D2 5 4 G2<br>D1<br>D1<br>D2 6 Q2 3 S2<br>G2 D1 7 2 G1<br>S2<br>Q1<br>G1 D1 8 1 S1<br>&<br>S1<br>Pin 1<br>**----- End of picture text -----**<br>


These devices are well suited for portable electronics applications: load switching and power management, battery charging and protection circuits. 

|||**SO-8**|||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
|**MOSFET Maximum Ratings**|**MOSFET Maximum Ratings  **TA= 25°C unless otherwise noted||= 25°C unless otherwise noted||||||||||
|**Symbol**||||**Parameter**||||**Ratings**||||**Units**|
|VDS|Drain to Source Volta|Drain to Source Voltage|||||||-60|||V|
|VGS|Gate to Source Voltage||||||||±20|||V|
|ID|Drain Current   -Continuous<br>-Pulsed|||||(Note 1a)|||-2.9<br>-12|||A|
|EAS|Single Pulse Avalanche Energy|||||(Note 3)|||54|||mJ|
||Power Dissipation for Dual Operation||||||||2||||
|PD|Power Dissipation|||||(Note 1a)|||1.6|||W|
||Power Dissipation|||||(Note 1b)|||0.9||||
|TJ, TSTG|Operatingand Storage Junction Temperature Ran||e Junction Temperature Range|||||-55 to +150|-55 to +150|||°C|
|**Thermal Characteristics**|||||||||||||
|RθJC<br>RθJA<br>~~__—~~|Thermal Resistance, Junction to Case<br>Thermal Resistance, Junction to Ambient||Thermal Resistance, Junction to Case<br>Thermal Resistance, Junction to Ambient|||(Note 1a)|||40<br>78|||°C/W|
|**Package Marking and Ordering Information**|||||||||||||
|**Device Marking**<br>FDS9958<br>~~[_~~||**Device**<br>FDS9958-F085||**Package**<br>SO-8||**Reel Size**<br>330mm||**Tape Width**<br>12mm|||**Quantity**<br>2500units||



**1** 

©2016 Semiconductor Components Industries, LLC. September-2017, Rev.2 

Publication Order Number: FDS9958-F085/D 

**Electrical Characteristics** TJ = 25°C unless otherwise noted 

|**Symbol**<br>**Parameter**<br>**Test Conditions**<br>**Min**<br>**Typ**<br>**Max**<br>**Units**<br>**Off Characteristics**<br>BVDSS<br>Drain to Source Breakdown Voltage<br>ID= -250µA, VGS= 0V<br>-60<br>V<br>∆BVDSS<br>∆TJ<br>Breakdown Voltage Temperature<br>Coefficient<br>ID= -250µA, referenced to 25°C<br>-52<br>mV/°C<br>IDSS<br>Zero Gate Voltage Drain Current<br>VDS= -48V,<br>-1<br>µA<br>VGS= 0V<br>TJ= 125°C<br>-100<br>IGSS<br>Gate to Source Leakage Current<br>VGS= ±20V, VDS= 0V<br>±100<br>nA<br>**On Characteristics**<br>VGS(th)<br>Gate to Source Threshold Voltage<br>VGS= VDS,  ID= -250µA<br>-1.0<br>-1.6<br>-3.0<br>V<br>∆VGS(th)<br> ∆TJ<br>Gate to Source Threshold Voltage<br>Temperature Coefficient<br>ID= -250µA, referenced to 25°C<br>4<br>mV/°C<br>rDS(on)<br>Static Drain to Source On Resistance<br>VGS= -10V,  ID= -2.9A<br>82<br>105<br>mΩ<br>VGS= -4.5V,   ID= -2.5A<br>103<br>135<br>VGS= -10V,  ID= -2.9A, TJ= 125°C<br>131<br>190<br>gFS<br>Forward Transconductance<br>VDD= -5V,  ID= -2.9A<br>7.7<br>S<br>**Dynamic Characteristics**<br>Ciss<br>Input Capacitance<br>VDS= -30V, VGS= 0V,<br>f = 1MHz<br>765<br>1020<br>pF<br>Coss<br>Output Capacitance<br>90<br>120<br>pF<br>Crss<br>Reverse Transfer Capacitance<br>40<br>65<br>pF<br>**Switching Characteristics**<br>~~=~~<br>~~—-_-—s~~<br>~~——~~<br>~~=~~|**Symbol**<br>**Parameter**<br>**Test Conditions**<br>**Min**<br>**Typ**<br>**Max**<br>**Units**<br>**Off Characteristics**<br>BVDSS<br>Drain to Source Breakdown Voltage<br>ID= -250µA, VGS= 0V<br>-60<br>V<br>∆BVDSS<br>∆TJ<br>Breakdown Voltage Temperature<br>Coefficient<br>ID= -250µA, referenced to 25°C<br>-52<br>mV/°C<br>IDSS<br>Zero Gate Voltage Drain Current<br>VDS= -48V,<br>-1<br>µA<br>VGS= 0V<br>TJ= 125°C<br>-100<br>IGSS<br>Gate to Source Leakage Current<br>VGS= ±20V, VDS= 0V<br>±100<br>nA<br>**On Characteristics**<br>VGS(th)<br>Gate to Source Threshold Voltage<br>VGS= VDS,  ID= -250µA<br>-1.0<br>-1.6<br>-3.0<br>V<br>∆VGS(th)<br> ∆TJ<br>Gate to Source Threshold Voltage<br>Temperature Coefficient<br>ID= -250µA, referenced to 25°C<br>4<br>mV/°C<br>rDS(on)<br>Static Drain to Source On Resistance<br>VGS= -10V,  ID= -2.9A<br>82<br>105<br>mΩ<br>VGS= -4.5V,   ID= -2.5A<br>103<br>135<br>VGS= -10V,  ID= -2.9A, TJ= 125°C<br>131<br>190<br>gFS<br>Forward Transconductance<br>VDD= -5V,  ID= -2.9A<br>7.7<br>S<br>**Dynamic Characteristics**<br>Ciss<br>Input Capacitance<br>VDS= -30V, VGS= 0V,<br>f = 1MHz<br>765<br>1020<br>pF<br>Coss<br>Output Capacitance<br>90<br>120<br>pF<br>Crss<br>Reverse Transfer Capacitance<br>40<br>65<br>pF<br>**Switching Characteristics**<br>~~=~~<br>~~—-_-—s~~<br>~~——~~<br>~~=~~|
|---|---|
|td(on)<br>Turn-On DelayTime<br>VDD= -30V, ID= -2.9A,<br>VGS= -10V, RGEN= 6Ω<br>6<br>12<br>tr<br>Rise Time<br>3<br>10<br>td(off)<br>Turn-Off DelayTime<br>27<br>43|ns<br>ns<br>ns|
|tf<br>Fall Time<br>6<br>12|ns|
|Qg<br>Total Gate Charge<br>VGS= 0V to -10V<br>VDD= -30V,<br>ID= -2.9A<br>16<br>23<br>nC<br>Qg<br>Total Gate Charge<br>VGS= 0V to -4.5V<br>8<br>12<br>nC<br>Qgs<br>Gate to Source Charge<br>2<br>nC<br>Qgd<br>Gate to Drain “Miller” Charge<br>3<br>nC<br>~~Sa~~||
|**Drain-Source Diode Characteristics**<br>VSD<br>Source to Drain Diode  Forward Voltage<br>VGS = 0V, IS = -1.3A(Note 2)<br>-0.8<br>-1.2<br>V<br>trr<br>Reverse RecoveryTime<br>IF= -2.9A, di/dt = 100A/µs<br>26<br>42<br>ns<br>Qrr<br>Reverse RecoveryCharge<br>35<br>nC<br>NOTES:<br>1. RθJAis determined with the device mounted on a 1in2pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJCis guaranteed by design while RθCAis determined by<br>21<br>~~———~~<br>~~=~~||
|the user's board design.||
|b) 135°C/W when<br>mounted on a<br>minimun pad<br>a) 78°C/W when<br>mounted on a  1 in2<br>pad of 2 oz copper<br>—e||



2. Pulse Test: Pulse Width < 30 0 µs, Duty cycle < 2.0%. 3. UIL condition: Starting TJ = 25°C, L = 3mH, IAS = 6A, VDD = 60V, VGS = 10V. 

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## **Typical Characteristics** TJ = 25°C unless otherwise noted 

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12 2.5<br>VGS = -10V VGS = -4V<br>10 VGS = -3.5V VGS = -3V<br>VGS = -5V 2.0 VGS = -3.5V<br>8<br>VGS = -4.5V VGS = -4V<br>6 1.5<br>VGS =  -3V<br>4 VGS = -4.5V VGS =  -5V<br>1.0<br>2 PULSE DURATION = 300DUTY CYCLE = 2.0%MAX µ s PULSE DURATION = 300 µ s VGS = -10V<br>DUTY CYCLE = 2.0%MAX<br>0 0.5<br>0 1 2 3 4 0 2 4 6 8 10 12<br>-VDS, DRAIN TO SOURCE VOLTAGE (V) -ID, DRAIN CURRENT(A)<br>Figure 1.  On-Region Characteristics Figure 2.  Normalized On-Resistance<br>vs Drain Current and Gate Voltage<br>1.8 240<br> ID = -2.9A ID = -2.9A PULSE DURATION = 300DUTY CYCLE = 2.0%MAX µ s<br>1.6 VGS = -10V 210<br>1.4 180<br>TJ = 125 [o] C<br>1.2 150<br>1.0 120<br>TJ = 25 [o] C<br>90<br>0.8<br>60<br>0.6<br>-75 -50 -25 0 25 50 75 100 125 150 2 4 6 8 10<br>TJ, JUNCTION TEMPERATURE ( [o] C) -VGS, GATE TO SOURCE VOLTAGE (V)<br>Figure 3.  Normalized  On- Resistance              Figure 4.   On-Resistance vs  Gate to<br>vs Junction Temperature Source Voltage<br>12 20<br>PULSE DURATION = 300 µ s 10<br>10 DUTY CYCLE = 2.0%MAX VGS = 0V<br>VDD = -5V 1<br>8 TJ = 150 [o] C<br>6 0.1 TJ = 25 [o] C<br>4 TJ = 150 [o] C TJ = -55 [o] C<br>0.01<br>TJ = 25 [o] C<br>2<br>TJ = -55 [o] C<br>1E-3<br>0 0.0 0.2 0.4 0.6 0.8 1.0 1.2<br>0 1 2 3 4 5<br>-VSD, BODY DIODE FORWARD VOLTAGE (V)<br>-VGS, GATE TO SOURCE VOLTAGE (V)<br>Figure 5.  Transfer Characteristics Figure 6.    Source to Drain  Diode<br>Forward Voltage vs Source Current<br>NORMALIZED<br>DRAIN CURRENT (A)<br>,<br>D<br>-I<br>DRAIN TO SOURCE ON-RESISTANCE<br>)<br>Ω<br>m<br>(<br>NORMALIZED , DRAIN TO<br>rDS(on)<br> DRAIN TO SOURCE ON-RESISTANCE SOURCE ON-RESISTANCE<br>, DRAIN CURRENT (A)<br>-ID , REVERSE DRAIN CURRENT (A)S<br>-I<br>**----- End of picture text -----**<br>


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## **Typical Characteristics** TJ = 25°C unless otherwise noted 

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10 2000<br>ID = -2.9A 1000<br>8 VDD = -20V Ciss<br>6<br>VDD = -30V<br>4 100 Coss<br>VDD = -40V<br>Crss<br>2 f = 1MHz<br>VGS = 0V<br>0 10<br>0 5 10 15 20 0.1 1 10 60<br>Qg, GATE CHARGE(nC) -VDS, DRAIN TO SOURCE VOLTAGE (V)<br>Figure 7.  Gate Charge Characteristics Figure 8.  Capacitance vs Drain<br>to Source Voltage<br>4 3.0<br>2.5<br>3<br>2.0<br>VGS = -4.5V VGS = -10V<br>2 TJ = 25 [o] C 1.5<br>TJ = 125 [o] C 1.0<br>R θ JA = 78oC/W<br>0.5<br>1 0.0<br>0.01 0.1 1 10 100 25 50 75 100 125 150<br>tAV, TIME IN AVALANCHE(ms) TA, AMBIENT TEMPERATURE (oC)<br>Figure 9. Unclamped Inductive   Figure 10.  Maximum Continuous Drain<br>Switching Capability Current  vs Ambient Temperature<br>20 200<br>10 0.1ms 100 VGS = -10V SINGLE PULSE<br>R θ JA = 135 [o] C/W<br>1ms TA = 25 [o] C<br>1<br>THIS AREA IS  10ms 10<br>LIMITED BY r<br>DS(on) 100ms<br>0.1 SINGLE PULSE<br>TJ = MAX RATED 1s<br>R θ JA = 135 [o] C/W 10s 1<br>TA = 25 [o] C DC<br>0.01 0.5<br>0.1 1 10 100 200 10-3 10-2 10-1 100 101 102 103<br>-VDS, DRAIN to SOURCE VOLTAGE (V) t, PULSE WIDTH (s)<br>Figure 11.  Forward Bias Safe    Figure 12.   Single  Pulse Maximum<br>Operating Area  Power  Dissipation<br>CAPACITANCE (pF)<br>, GATE TO SOURCE VOLTAGE(V)<br>GS<br>-V<br>DRAIN CURRENT (A)<br>,<br>D<br>-I<br>, AVALANCHE CURRENT(A)<br>AS<br>-I<br>, DRAIN CURRENT (A)<br>D<br> -I<br>PEAK TRANSIENT POWER (W)<br>P)(PK,<br>**----- End of picture text -----**<br>


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Typical Characteristics  TJ = 25°C unless otherwise noted<br>2<br>DUTY CYCLE-DESCENDING ORDER<br>1<br>D = 0.5<br>     0.2<br>     0.1<br>     0.05 PDM<br>0.1      0.02<br>     0.01<br>t1<br>t2<br>NOTES:<br>SINGLE PULSE DUTY FACTOR: D = t1/t2<br>0.01 R θ JA = 135 [o] C/W PEAK TJ = PDM x Z θ JA x R θ JA + TA<br>0.005<br>10-3 10-2 10-1 100 101 102 103<br>t, RECTANGULAR PULSE DURATION (s)<br>Figure 13.  Transient Thermal Response Curve<br>Z JA θ<br>IMPEDANCE,<br>NORMALIZED THERMAL<br>**----- End of picture text -----**<br>


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