FDS8984

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## MOSFET – N-Channel, POWERTRENCH[�] 

## 30 V, 7 A, 23 m **�** 

## FDS8984, FDS8984-F40 

## **General Description** 

This N−Channel MOSFET has been designed specifically to improve the overall efficiency of dc−dc converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed. 

## **Features** 

|**VDSS**|**RDS(ON) MAX**|**ID MAX**|
|---|---|---|
|30 V|23 m�@ VGS= 10 V|7.0 A|
||30 m�@ VGS= 4.5 V|6.0 A|



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D2 [D2]<br>D1<br>D1<br>G2<br>S2<br>G1<br>S1<br>Pin 1<br>SOIC8<br>CASE 751EB<br>**----- End of picture text -----**<br>


- Max RDS(ON) = 23 m� @ VGS = 10 V, ID = 7 A 

- Max RDS(ON) = 30 m� @ VGS = 4.5 V, ID = 6 A 

## **MARKING DIAGRAM** 

- Low Gate Charge 

- 100% RG Tested 

- This Device is Pb−Free and Halogen Free 

## **ABSOLUTE MAXIMUM RATINGS** (TA = 25 ° C unless otherwise noted) 

|**ABSOLU**|**TE MAXIMUM RATINGS** (TA= 25°C u|**TE MAXIMUM RATINGS** (TA= 25°C u|nless otherwise|noted)|
|---|---|---|---|---|
|**Symbol**|**Parameter**||**Ratings**|**Unit**|
|VDS|Drain to Source Voltage||30|V|
|VGS|Gate to Source|Voltage|±20|V|
|ID|Drain Current|− Continuous (Note 1a)|7|A|
|||− Pulsed|30||
|EAS|Single Pulse Avalache Energy (Note 2)||32|mJ|
|PD|Power Dissipation for Single Operation||1.6|W|
||Derate Above 25°C||13|mW/°C|
|TJ, TSTG|Operating and Storage Temperature||−55 to +150|°C|



Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 

## **THERMAL CHARACTERISTICS** 

|**Symbol**|**Parameter**|**Ratings**|**Unit**|
|---|---|---|---|
|R�JA|Thermal Resistance, Junction−to−Ambient<br>(Note 1a)|78|°C/W|
|R�JC|Thermal Resistance, Junction−to−Case<br>(Note 1)|40|°C/W|



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FDS8984<br>ALYW<br>FDS8984 = Specific Device Code<br>A = Assembly Site<br>L = Wafer Lot Number<br>YW = Assembly Start Week<br>**----- End of picture text -----**<br>


## **PIN ASSIGNMENT** 

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5 4<br>6 Q2 3<br>7 2<br>Q1<br>8 1<br>N−Channel MOSFET<br>**----- End of picture text -----**<br>


## **ORDERING INFORMATION** 

|**Device**|**Pack**|**age**<br>**Shipping**†|
|---|---|---|
|FDS8984|SOI<br>(Pb−F|C8<br>ree)<br>2500 /<br>Tape & Reel|
|FDS8984−F40|SOI<br>(Pb−F|C8<br>ree)<br>2500 /<br>Tape & Reel|



- †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. 

Publication Order Number: 

**1** 

© Semiconductor Components Industries, LLC, 2007 **February, 2022 − Rev. 3** 

**FDS8984/D** 

**FDS8984, FDS8984−F40** 

**ELECTRICAL CHARACTERISTICS** (TA = 25 ° C unless otherwise noted) 

|**ELECTRIC**|**ELECTRIC**|**AL CHARACTERISTICS** (TA= 25°C u|nless otherwise noted)|||||
|---|---|---|---|---|---|---|---|
|**Symbol**||**Parameter**|**Test Conditions**|**Min**|**Typ**|**Max**|**Unit**|
|**OFF CHARACTERISTICS**||||||||
||BVDSS|Drain to Source Breakdown Voltage|ID= 250�A, VGS= 0 V|30|−|−|V|
||�BVDSS<br>�TJ|Breakdown Voltage Temperature<br>Coefficient|ID= 250�A, Referenced to 25°C|−|23|−|mV/°C|
||IDSS|Zero Gate Voltage Drain Current|VDS= 24 V, VGS= 0 V<br>VDS= 24 V, VGS= 0 V, TJ= 125°C|−<br>−|−<br>−|1<br>250|�A|
||IGSS|Gate to Source Leakage Current|VGS=±20 V, VDS= 0 V|−|−|±100|nA|
|**ON CHARACTERISTICS**(Note 3)||||||||
||VGS(th)|Gate to Source Threshold Voltage|VDS= VGS, ID= 250�A|1.2|1.7|2.5|V|
||�VGS(th)<br>�TJ|Gate to Source Threshold Voltage<br>Temperature Coefficient|ID= 250�A, Referenced to 25°C|−|−4.3|−|mV/°C|
||RDS(on)|Drain to Source On–Resistance|VGS= 10 V, ID= 7 A<br>VGS= 4.5 V, ID= 6 A<br>VGS= 10 V, ID= 7 A, TJ= 125°C|−<br>−<br>−|19<br>24<br>26|23<br>30<br>32|m�|
|**DYNAMIC CHARACTERISTICS**||||||||
|Ciss||Input Capacitance|VDS= 15 V, VGS= 0 V,<br>f = 1.0 MHz|−|475|635|pF|
|Coss||Output Capacitance||−|100|135|pF|
|Crss||Reverse Transfer Capacitance||−|65|100|pF|
|RG||Gate Resistance|f = 1.0 MHz|−|0.9|1.6|�|
|**SWITCHING CHARACTERISTICS**(Note 3)||||||||
|td(on)||Turn–On Delay Time|VDD= 15 V, ID= 7 A,<br>VGS= 10 V, RGS= 33�|−|5|10|ns|
|tr||Rise Time||−|9|18|ns|
|td(off)||Turn–Off Delay Time||−|42|68|ns|
|tf||Fall Time||−|21|34|ns|
|Qg||Total Gate Charge|VDS= 15 V, VGS= 10 V, ID= 7 A|−|9.2|13|nC|
|Qg||Total Gate Charge|VDS= 15 V, VGS= 5 V, ID= 7 A|−|5.0|7|nC|
|Qgs||Gate to Source Gate Charge||−|1.5|−|nC|
|Qgd||Gate to Drain “Miller” Charge||−|2.0|−|nC|
|**DRAIN−SOURCE DIODE CHARACTERISTICS**||||||||
|VSD||Source to Drain Diode Voltage|ISD= 7 A|−|0.9|1.25|V|
||||ISD= 2.1 A|−|0.8|1.0|V|
|trr||Diode Reverse Recovery Time|IF= 7 A, di/dt= 100 A/�s|−|−|33|ns|
|Qrr||Diode Reverse Recovery Charge||−|−|20|nC|



Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 

## NOTES: 

1. R � JA is the sum of the junction−to−case and case−to−ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R � JC is guaranteed by design while R � CA is determined by the user’s board design. 

a. 78 ° C/W when b. 125 ° C/W when c. 135 ° C/W when mounted on a 0.5 in[2] mounted on a 0.02 in[2] mounted on pad of 2 oz copper pad of 2 oz copper a minimum pad. 

Scale 1 : 1 on letter size paper 

2. Starting TJ = 25 ° C, L = 1 mH, IAS = 8 A, VDD = 27 V, VGS = 10 V. 

3. Pulse Test: Pulse Width < 300 � s, Duty Cycle < 2.0%. 

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**2** 

**FDS8984, FDS8984−F40** 

## **TYPICAL CHARACTERISTICS** (TJ = 25 ° C unless otherwise noted) 

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30<br>VVGSGS = 10.0 V = 5.0 V VGS = 3.5 V<br>20<br>VGS = 4.5 V<br>VGS = 4.0 V VGS = 3.0 V<br>10<br>PULSE DURATION = 80  � s<br>DUTY CYCLE = 0.5% MAX<br>0<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0<br>VDS, DRAIN TO SOURCE VOLTAGE (V)<br>Figure 1. On Region Characteristics<br>1.6<br>ID = 7 A<br>VGS = 10 V<br>1.4<br>1.2<br>1.0<br>0.8<br>0.6<br>−80 −40 0 40 80 120 160<br>TJ, JUNCTION TEMPERATURE ( ° C)<br>Figure 3. On−Resistance vs. Temperature<br>30<br>PULSE DURATION = 80  � s<br>DUTY CYCLE = 0.5% MAX<br>25<br>VDD = 5 V<br>20<br>15<br>TJ = 150 ° C T J = 25 ° C<br>10<br>TJ = −55 ° C<br>5<br>0<br>1 2 3 4<br>VGS, GATE TO SOURCE VOLTAGE (V)<br>, DRAIN CURRENT (A)<br>ID<br>NORMALIZED DRAIN<br>TO SOURCE ON−RESISTANCE<br>, DRAIN CURRENT (A)<br>ID<br>**----- End of picture text -----**<br>


**Figure 5. Transfer Characteristics** 

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3.0<br>PULSE DURATION = 80  � s<br>VGS = 3.0 V DUTY CYCLE = 0.5% MAX<br>2.5<br>2.0<br>VGS = 3.5 V VGS = 4.5 V<br>1.5 V GS = 4.0 V<br>1.0<br>VGS = 5.0 V VGS = 10 V<br>0.5<br>5 10 15 20 25 30<br>ID, DRAIN CURRENT (A)<br> NORMALIZED DRAIN<br>DS(ON)<br>R TO SOURCE ON−RESISTANCE<br>**----- End of picture text -----**<br>


**Figure 2. On−Resistance vs. Drain Current and Gate Voltage** 

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60<br>ID = 7 A PULSE DURATION = 80  � s<br>55 DUTY CYCLE = 0.5% MAX<br>50<br>45<br>40<br>35 TJ = 125 ° C<br>30<br>25<br>20 TJ = 25 ° C<br>15<br>2 4 6 8 10<br>VGS, GATE TO SOURCE VOLTAGE (V)<br>Figure 4. On−Resistance vs. Gate to Source<br>Voltage<br>30<br>10 V GS  = 0 V<br>T J  = 150 ° C<br>1<br>0.1 T J  = 25 ° C<br>0.01<br>TJ = −55 ° C<br>0.001<br>0 0.2 0.4 0.6 0.8 1 1.2 1.4<br>VSD, BODY DIODE FORWARD VOLTAGE (V)<br>) �<br> DRAIN<br>DS(ON)<br>R<br>TO SOURCE ON−RESISTANCE (m<br>, REVERSE DRAIN CURRENT (A)<br>IS<br>**----- End of picture text -----**<br>


**Figure 6. Source to Drain Forward Voltage vs. Source Current** 

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**3** 

**FDS8984, FDS8984−F40** 

## **TYPICAL CHARACTERISTICS** (TJ = 25 ° C unless otherwise noted) (continued) 

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10<br>VDD = 10 V<br>8<br>6<br>VDD = 15 V<br>4<br>VDD = 20 V<br>2<br>0<br>0 2 4 6 8 10<br>Qg, GATE CHARGE (nC)<br>, GATE TO SOURCE VOLTAGE (V)<br>GS<br>V<br>**----- End of picture text -----**<br>


**Figure 7. Gate Charge Characteristics** 

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20<br>10<br>STARTING TJ = 25 ° C<br>STARTING TJ = 125 ° C<br>1<br>0.01 0.1 1 10 20<br>tAV, TIME IN AVALANCHE (ms)<br>Figure 9. Unclamped Inductive Switching<br>Capability<br>100<br>10  � s<br>10 100  � s<br>1 1 ms<br>OPERATION IN THIS 10 ms<br>AREA MAY BE  100 ms<br>0.1 LIMITED BY r DS(on) 1 s<br>SINGLE PULSE DC<br>TJ = MAX RATED<br>TA = 25 ° C<br>0.01<br>0.1 1 10 100<br>VDS, DRAIN TO SOURCE VOLTAGE (V)<br>(A)<br>, AVALANCHE CURRENT<br>IAS<br>, DRAIN CURRENT (A)<br>ID<br>**----- End of picture text -----**<br>


**Figure 11. Forward Bias Safe Operating Area** 

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700<br>600<br>CISS<br>f = 1 MHz<br>500<br>VGS = 0 V<br>400<br>300<br>COSS<br>200<br>100 CRSS<br>0<br>0.1 1 10 30<br>VDS, DRAIN TO SOURCE VOLTAGE (V)<br>Figure 8. Capacitance vs. Drain to Source<br>Voltage<br>8<br>7<br>6<br>VGS = 10 V<br>5<br>4<br>3 VGS = 4.5 V<br>2<br>1<br>0<br>25 50 75 100 125 150<br>TA, AMBIENT TEMPERATURE ( ° C)<br>CAPACITANCE (pF)<br>, DRAIN CURRENT (A)<br>ID<br>**----- End of picture text -----**<br>


**Figure 10. Maximum Continuous Drain Current vs. Ambient Temperature** 

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3000<br>T A  = 25 ° C<br>1000 FOR TEMPERATURES<br>ABOVE 25 ° C DERATE PEAK<br>CURRENT AS FOLLOWS:<br>100 I  � I 150 � TA<br>VGS = 10 V 25 � 125<br>� �<br>10<br>SINGLE PULSE<br>1<br>10 [−5] 10 [−4] 10 [−3] 10 [−2] 10 [−1] 10 [0] 10 [1] 10 [2] 10 [3]<br>t, PULSE WIDTH (s)<br>, PEAK TRANSIENT POWER (W)<br>(PK)<br>P<br>**----- End of picture text -----**<br>


**Figure 12. Single Pulse Maximum Power Dissipation** 

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**4** 

**FDS8984, FDS8984−F40** 

## **TYPICAL CHARACTERISTICS** (TJ = 25 ° C unless otherwise noted) (continued) 

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2<br>DUTY CYCLE − DESCENDING ORDER<br>1<br>D = 0.5<br>     0.2<br>0.1      0.1<br>     0.05<br>     0.02<br>0.01      0.01<br>t1<br>t2<br>1E−3 SINGLE PULSE<br>DUTY FACTOR: D = t1 /t2<br>PEAK T J  = P DM ×  Z � JA ×  R � JA + T A<br>1E−4<br>10 [−5] 10 [−4] 10 [−3] 10 [−2] 10 [−1] 10 [0] 10 [1] 10 [2] 10 [3]<br>t, RECTANGULAR PULSE DURATION (s)<br>JA<br>�<br>DM<br>P<br>IMPEDANCE Z<br>NORMALIZED THERMAL<br>**----- End of picture text -----**<br>


**Figure 13. Transient Thermal Response Curve** 

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**5** 

MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** 

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SOIC8<br>CASE 751EB<br>ISSUE A<br>DATE 24 AUG 2017<br>**----- End of picture text -----**<br>


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