FDS8949

## **ON Semiconductor** 

## **Is Now** 

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## **FDS8949 Dual N-Channel Logic Level PowerTrench[®] MOSFET** 

## **General Description** 

## **40V, 6A, 29m** Ω 

## **Features** 

Max rDS(on) = 29mΩ at VGS = 10V Max rDS(on) = 36mΩ at VGS = 4.5V Low gate charge 

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**----- Start of picture text -----**<br>
High performance trench technology for extremely low<br>rDS(on)<br>High power and current handling capability<br>RoHS compliant<br>D2<br>D2<br>D1<br>D1<br>pe G2<br>SO-8<br>S2<br>G1<br>Pin 1 S1<br>**----- End of picture text -----**<br>


These N-Channel Logic Level MOSFETs are produced using       ON         Semiconductor’s      advanced PowerTrench **[®]** process that has been especially tailored to   minimize  the  on-state resistance and yet maintain superior switching performance. These   devices  are   well  suited   for  low voltage and battery  powered  applications  where low in-line power loss and fast switching are required. 

**Applications** Inverter Power suppliers ~~=~~ 

## **MOSFET Maximum Ratings** TA = 25°C unless otherwise noted 

|**Symbol**<br>**Parameter**||**Ratings**|**Ratings**|**Units**|
|---|---|---|---|---|
|VDS<br>Drain to Source Voltage|||40|V|
|VGS<br>Gate to Source Voltage|||±20|V|
|ID<br>Drain Current   -Continuous<br>-Pulsed|(Note 1a)||6<br>20|A|
|EAS<br>Drain-Source Avalanche Energy|(Note 3)||26|mJ|
|Power Dissipation for Dual Operation|||2||
|PD<br>Power Dissipation for Single Operation|(Note 1a)||1.6|W|
||(Note 1b)||0.9||
|TJ, TSTG<br>Operatingand Storage Junction Temperature Range||-55 to 150||°C|
|**Thermal Characteristics**|||||
|RθJA<br>Thermal Resistance-Single operation, Junction to Ambient(Note 1a)<br>81<br>°C/W<br>RθJA<br>Thermal Resistance-Single operation, Junction to Ambient(Note 1b)<br>135<br>RθJC<br>Thermal Resistance, Junction to Case<br> (Note 1)<br>40<br>~~SST~~|||||
|**Package Marking and Ordering Information**|||||
|**Device Marking**<br>**Device**<br>**Reel Size**<br>**Tape Width**<br>**Quantity**<br>FDS8949<br>FDS8949<br>13’’<br>12mm<br>2500 units<br>~~——_——————~~|||||



©2006 Semiconductor Components industries, LLC. October-2017, Rev. 2 

Publication Order Number: FDS8949/D 

**1** 

|**Electrical Characteristics**TJ= 25°C unless otherwise noted<br>**Symbol**<br>**Parameter**<br>**Test Conditions**<br>**Min**<br>**Typ**<br>**Max**<br>**Units**<br>**Off Characteristics**<br>BVDSS<br>Drain to Source Breakdown Voltage ID= 250µA, VGS= 0V<br>40<br>V<br>∆BVDSS<br>∆TJ<br>Breakdown Voltage Temperature<br>Coefficient<br>ID= 250µA, referenced to 25°C<br>33<br>mV/°C<br>IDSS<br>Zero Gate Voltage Drain Current<br>VDS= 32V,  VGS= 0V<br>1<br>µA<br>TJ= 55°C<br>10<br>µA<br>IGSS<br>Gate to Source Leakage Current<br>VGS= ±20V,VDS= 0V<br>±100<br>nA<br>**On Characteristics**<br>VGS(th)<br>Gate to Source Threshold Voltage<br>VGS= VDS,  ID= 250µA<br>1<br>1.9<br>3<br>V<br>∆VGS(th)<br>∆TJ<br>Gate to Source Threshold Voltage<br>Temperature Coefficient<br>ID= 250µA, referenced to 25°C<br>-4.6<br>mV/°C<br>rDS(on)<br>Drain to Source On Resistance<br>VGS= 10V, ID= 6A<br>21<br>29<br>mΩ<br>VGS= 4.5V, ID= 4.5A<br>26<br>36<br>VGS= 10V, ID= 6A,TJ= 125°C<br>29<br>43<br>gFS<br>Forward Transconductance<br>VDS= 10V,ID= 6A<br>22<br>S<br> **(Note 2)**<br>**Dynamic Characteristics**<br>Ciss<br>Input Capacitance<br>VDS= 20V, VGS= 0V,<br>f = 1MHz<br>715<br>955<br>pF<br>Coss<br>Output Capacitance<br>105<br>140<br>pF<br>Crss<br>Reverse Transfer Capacitance<br>60<br>90<br>pF<br>Rg<br>Gate Resistance<br>f = 1MHz<br>1.1<br>Ω<br>**Switching Characteristics**<br>td(on)<br>Turn-On DelayTime<br>VDD= 20V, ID= 1A<br>VGS= 10V, RGEN= 6Ω<br>9<br>18<br>ns<br>tr<br>Rise Time<br>5<br>10<br>ns<br>td(off)<br>Turn-Off DelayTime<br>23<br>37<br>ns<br>tf<br>Fall Time<br>3<br>6<br>ns<br>Qg<br>Total Gate Charge<br>VDS= 20V, ID= 6A,VGS= 5V<br>7.7<br>11<br>nC<br>Qgs<br>Gate to Source Gate Charge<br>2.4<br>nC<br>Qgd<br>Gate to Drain “Miller”Charge<br>2.8<br>nC<br>~~a~~<br>~~=——aannae~~|**Electrical Characteristics**TJ= 25°C unless otherwise noted<br>**Symbol**<br>**Parameter**<br>**Test Conditions**<br>**Min**<br>**Typ**<br>**Max**<br>**Units**<br>**Off Characteristics**<br>BVDSS<br>Drain to Source Breakdown Voltage ID= 250µA, VGS= 0V<br>40<br>V<br>∆BVDSS<br>∆TJ<br>Breakdown Voltage Temperature<br>Coefficient<br>ID= 250µA, referenced to 25°C<br>33<br>mV/°C<br>IDSS<br>Zero Gate Voltage Drain Current<br>VDS= 32V,  VGS= 0V<br>1<br>µA<br>TJ= 55°C<br>10<br>µA<br>IGSS<br>Gate to Source Leakage Current<br>VGS= ±20V,VDS= 0V<br>±100<br>nA<br>**On Characteristics**<br>VGS(th)<br>Gate to Source Threshold Voltage<br>VGS= VDS,  ID= 250µA<br>1<br>1.9<br>3<br>V<br>∆VGS(th)<br>∆TJ<br>Gate to Source Threshold Voltage<br>Temperature Coefficient<br>ID= 250µA, referenced to 25°C<br>-4.6<br>mV/°C<br>rDS(on)<br>Drain to Source On Resistance<br>VGS= 10V, ID= 6A<br>21<br>29<br>mΩ<br>VGS= 4.5V, ID= 4.5A<br>26<br>36<br>VGS= 10V, ID= 6A,TJ= 125°C<br>29<br>43<br>gFS<br>Forward Transconductance<br>VDS= 10V,ID= 6A<br>22<br>S<br> **(Note 2)**<br>**Dynamic Characteristics**<br>Ciss<br>Input Capacitance<br>VDS= 20V, VGS= 0V,<br>f = 1MHz<br>715<br>955<br>pF<br>Coss<br>Output Capacitance<br>105<br>140<br>pF<br>Crss<br>Reverse Transfer Capacitance<br>60<br>90<br>pF<br>Rg<br>Gate Resistance<br>f = 1MHz<br>1.1<br>Ω<br>**Switching Characteristics**<br>td(on)<br>Turn-On DelayTime<br>VDD= 20V, ID= 1A<br>VGS= 10V, RGEN= 6Ω<br>9<br>18<br>ns<br>tr<br>Rise Time<br>5<br>10<br>ns<br>td(off)<br>Turn-Off DelayTime<br>23<br>37<br>ns<br>tf<br>Fall Time<br>3<br>6<br>ns<br>Qg<br>Total Gate Charge<br>VDS= 20V, ID= 6A,VGS= 5V<br>7.7<br>11<br>nC<br>Qgs<br>Gate to Source Gate Charge<br>2.4<br>nC<br>Qgd<br>Gate to Drain “Miller”Charge<br>2.8<br>nC<br>~~a~~<br>~~=——aannae~~|
|---|---|
|**Drain-Source Diode Characteristics**<br>and Maximum Ratings||
|VSD<br>Source to Drain Diode  Forward Voltage VGS= 0V, IS= 6A(note 2)<br>0.8<br>1.2<br>V<br>trr<br>Reverse RecoveryTime(note 3)<br>IF= 6A, diF/dt= 100A/µs<br>17<br>26<br>ns<br>Qrr<br>Reverse RecoveryCharge<br>7<br>11<br>nC<br>~~SS~~||
|**Notes:**||
|**1:** RθJAis the sum of the junction-to-case and case-to- ambient  thermal resistance where the case thermal reference is defined  as the solder mounting surface of the||
|drain pins. RθJCis guaranteed by design  while RθJAis determined by the user’s board design.||
|Scale 1:1 on letter size paper<br>**a)**81°C/W when<br>mounted on a 1in2<br>pad of 2 oz copper<br>**b)**135°C/W when mounted on a<br>minimum pad .<br>iH<br>bos||



**2:** Pulse Test: Pulse Width < 300 us, Duty Cycle < 2.0%. 

- **3:** Starting TJ = 25°C, L = 1mH, IAS = 7.3A, VDD = 40V, VGS = 10V. 

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**Typical Characteristics** TJ = 25°C unless otherwise noted 

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20 3.0<br>VGS = 10V PULSE DURATION = 300 µ s<br>VGS = 3.5V DUTY CYCLE = 20%MAX<br>16 2.5<br>VGS = 4.5V VGS = 3.0V<br>12 2.0 VGS =  3.5V<br>8 VGS = 3.0V 1.5 VGS = 4.5V<br>4 1.0<br>PULSE DURATION = 300 µ s VGS = 10V<br>DUTY CYCLE = 20%MAX<br>0 0.5<br>0.0 0.5 1.0 1.5 2.0 2.5 0 4 8 12 16 20<br>VDS, DRAIN TO SOURCE VOLTAGE (V) ID, DRAIN CURRENT(A)<br>Figure 1.  On Region Characteristics Figure 2.  Normalized On-Resistance vs Drain<br>Current and Gate Voltage<br>1.6 70<br> ID = 6A ID = 3.5A PULSE DURATION = 300 µ s<br>VGS = 10V 60 DUTY CYCLE = 20%MAX<br>1.4<br>50<br>1.2<br>40<br>1.0 TJ = 125 [o] C<br>30<br>0.8<br>20<br>TJ = 25 [o] C<br>0.6 10<br>-50 -25 0 25 50 75 100 125 150 2 4 6 8 10<br>TJ, JUNCTION TEMPERATURE ( [o] C) VGS, GATE TO SOURCE VOLTAGE (V)<br>Figure 3.  Normalized On Resistance vs Junction  Figure 4.   On-Resistance vs Gate to Source<br>Temperature Voltage<br>20 100<br>PULSE DURATION = 300 µ s<br>DUTY CYCLE = 20%MAX VGS = 0V<br>16 VDD = 10V 10<br>TJ = 125 [o] C<br>12 1<br>TJ = 125 [o] C TJ = 25 [o] C<br>8 TJ = 25 [o] C 0.1<br>4 TJ = -55 [o] C 0.01 TJ = -55 [o] C<br>0 1E-3<br>1.5 2.0 2.5 3.0 3.5 4.0 0.2 0.4 0.6 0.8 1.0 1.2<br>VGS, GATE TO SOURCE VOLTAGE (V) VSD, BODY DIODE FORWARD VOLTAGE (V)<br>Figure 5.  Transfer Characteristics Figure 6.  Source to Drain  Diode Forward<br>Voltage vs Source Current<br>NORMALIZED<br>, DRAIN CURRENT (A)<br>ID<br>DRAIN TO SOURCE ON-RESISTANCE<br>)<br>Ω<br>m<br>(<br>, DRAIN TO<br>NORMALIZED rDS(on)<br>SOURCE ON-RESISTANCE<br> DRAIN TO SOURCE ON-RESISTANCE<br>, DRAIN CURRENT (A)<br>ID<br>, REVERSE DRAIN CURRENT (A)<br>IS<br>**----- End of picture text -----**<br>


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Typical Characteristics  TJ = 25°C unless otherwise noted<br>10 103<br>VDD = 10V<br>Ciss<br>8<br>VDD = 20V VDD = 30V<br>6 Coss<br>102<br>4 Crss<br>2<br>f = 1MHz<br>0 101 VGS = 0V<br>0 4 8 12 16 0.1 1 10 40<br>Qg, GATE CHARGE(nC) VDS, DRAIN TO SOURCE VOLTAGE (V)<br>Figure 7.  Gate Charge Characteristics Figure 8.  Capacitance vs Drain to Source Voltage<br>10 7<br>6<br>5<br>VGS = 10V<br>4<br>1 TJ = 25 [o] C<br>3 VGS = 4.5V<br>TJ = 125 [o] C<br>2<br>1 o<br>R θ JA = 81 C/W<br>0.1 0<br>10-3 10-2 10-1 100 101 102 103 25 50 75 100 125 150<br>tAV, TIME IN AVALANCHE(ms) TA, Ambient TEMPERATURE ( [o] C)<br>Figure 9.  Unclamped Inductive Switching  Figure 10.  Maximum Continuous Drain Current vs<br>Capability Ambient Temperature<br>100 100<br>VGS = 10V<br>10 100us<br>1ms<br>10 SINGLE PULSE<br>1 10ms R θ JA = 135°C/W<br>TA = 25°C<br>LIMITED BY<br>PACKAGE 100ms<br>0.1 OPERATION IN THIS  SINGLE PULSE 1s<br>AREA MAY BE  TJ = MAX RATED 10s SINGLE PULSE<br>LIMITED BY rDS(on) TA = 25 [o] C DC 1<br>0.01 0.7<br>0.01 0.1 1 10 100 300 10-4 10-3 10-2 10-1 100 101 102 103<br>VDS, DRAIN-SOURCE VOLTAGE (V) t, PULSE WIDTH (s)<br>Figure 11.  Forward Bias Safe Operating Area Figure 12.  Single Pulse Maximum Power<br>Dissipation<br>CAPACITANCE (pF)<br>, GATE TO SOURCE VOLTAGE(V)<br>GS<br>V<br>)<br>A<br>(<br>, DRAIN CURRENT (A)<br>, AVALANCHE CURRENTIAS ID<br>, DRAIN CURRENT (A)<br>ID<br>, PEAK TRANSIENT POWER (W)P)(PK<br>**----- End of picture text -----**<br>


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Typical Characteristics  TJ = 25°C unless otherwise noted<br>2<br>DUTY CYCLE-DESCENDING ORDER<br>1<br>D = 0.5<br>      0.2<br>      0.1<br>0.1       0.05 P(PK)<br>      0.02<br>      0.01<br>t1<br>0.01 t2<br>R θ JA(t) = r(t)*R θ JA<br>R θ JA = 135 [o] C/W            TJ-TA =P*R θ JA<br>DUTY FACTOR: D = t1/t2<br>SINGLE PULSE<br>1E-3<br>10-3 10-2 10-1 100 101 102 103<br>t, RECTANGULAR PULSE DURATION (s)<br>Figure 13.  Transient Thermal Response Curve<br>IMPEDANCE, ZJA θ<br>NORMALIZED THERMAL<br>**----- End of picture text -----**<br>


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ON Semiconductor and      are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 

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