FDS8949-F085

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## **FDS8949_F085 Dual N-Channel Logic Level PowerTrench[®] MOSFET 40V, 6A, 29m** Ω 

## **General Description** 

## **Features** 

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Max rDS(on) =  29mΩ at VGS = 10V These N-Channel Logic Level MOSFETs are produced<br>Max rDS(on) =  36mΩ at VGS = 4.5V  using       Fairchild          Semiconductor’s      advancedPowerTrench [®]  process that has been especially tailored<br>Low gate charge to   minimize  the  on-state resistance and yet maintain<br>superior switching performance.<br>High performance trench technology for extremely low<br>These   devices  are   well  suited   for  low voltage and<br>rDS(on) battery  powered  applications  where low in-line power<br>High power and current handling capability loss and fast switching are required.<br>Qualified to AEC Q101<br>Applications<br>RoHS compliant<br>Inverter<br>Power suppliers<br>D2<br>D2<br>D1<br>D1<br>G2<br>SO-8<br>S2<br>G1<br>ee ae:<br>Pin 1 S1 |<br>MOSFET Maximum Ratings TA = 25°C unless otherwise noted<br>Symbol Parameter Ratings Units<br>VDS Drain to Source Voltage 40 V<br>VGS Gate to Source Voltage ±20 V<br>Drain Current   -Continuous                                                            (Note 1a) 6<br>ID                          -Pulsed                                                                      20 A<br>EAS Drain-Source Avalanche Energy (Note 3) 26 mJ<br>Power Dissipation for Dual Operation                                              2<br>PD Power Dissipation for Single Operation                                        (Note 1a) 1.6 W<br>                                                                                                            (Note 1b) 0.9<br>TJ, TSTG Operating and Storage Junction Temperature Range -55 to 150 °C<br>Thermal Characteristics<br>RθJA Thermal Resistance-Single operation, Junction to Ambient      (Note 1a) 81<br>RθJA Thermal Resistance-Single operation, Junction to Ambient     (Note 1b) 135 °C/W<br>——— RθJC Thermal Resistance, Junction to Case                                           (Note 1) 40<br>Package Marking and Ordering Information<br>Device Marking Device Reel Size Tape Width Quantity<br>ee FDS8949 FDS8949_F085 13’’ 12mm 2500 units<br>**----- End of picture text -----**<br>


©2010 Fairchild Semiconductor Corporation **1** FDS8949_F085 Rev. A 

www.fairchildsemi.com 

|**Electrical Characteristics**TJ= 25°C unless otherwise noted<br>**Symbol**<br>**Parameter**<br>**Test Conditions**<br>**Min**<br>**Typ**<br>**Max**<br>**Units**<br>**Off Characteristics**<br>BVDSS<br>Drain to Source Breakdown Voltage ID= 250µA, VGS= 0V<br>40<br>V<br>∆BVDSS<br>∆TJ<br>Breakdown Voltage Temperature<br>Coefficient<br>ID= 250µA, referenced to 25°C<br>33<br>mV/°C<br>IDSS<br>Zero Gate Voltage Drain Current<br>VDS= 32V,  VGS= 0V<br>1<br>µA<br>TJ= 55°C<br>10<br>µA<br>IGSS<br>Gate to Source Leakage Current<br>VGS= ±20V,VDS= 0V<br>±100<br>nA<br>**On Characteristics**<br>VGS(th)<br>Gate to Source Threshold Voltage<br>VGS= VDS,  ID= 250µA<br>1<br>1.9<br>3<br>V<br>∆VGS(th)<br>∆TJ<br>Gate to Source Threshold Voltage<br>Temperature Coefficient<br>ID= 250µA, referenced to 25°C<br>-4.6<br>mV/°C<br>rDS(on)<br>Drain to Source On Resistance<br>VGS= 10V, ID= 6A<br>21<br>29<br>mΩ<br>VGS= 4.5V, ID= 4.5A<br>26<br>36<br>VGS= 10V, ID= 6A,TJ= 125°C<br>29<br>43<br>gFS<br>Forward Transconductance<br>VDS= 10V,ID= 6A<br>22<br>S<br> **(Note 2)**<br>**Dynamic Characteristics**<br>Ciss<br>Input Capacitance<br>VDS= 20V, VGS= 0V,<br>f = 1MHz<br>715<br>955<br>pF<br>Coss<br>Output Capacitance<br>105<br>140<br>pF<br>Crss<br>Reverse Transfer Capacitance<br>60<br>90<br>pF<br>Rg<br>Gate Resistance<br>f = 1MHz<br>1.1<br>Ω<br>**Switching Characteristics**<br>td(on)<br>Turn-On DelayTime<br>VDD= 20V, ID= 1A<br>VGS= 10V, RGEN= 6Ω<br>9<br>18<br>ns<br>tr<br>Rise Time<br>5<br>10<br>ns<br>td(off)<br>Turn-Off DelayTime<br>23<br>37<br>ns<br>tf<br>Fall Time<br>3<br>6<br>ns<br>Qg<br>Total Gate Charge<br>VDS= 20V, ID= 6A,VGS= 5V<br>7.7<br>11<br>nC<br>Qgs<br>Gate to Source Gate Charge<br>2.4<br>nC<br>Qgd<br>Gate to Drain “Miller”Charge<br>2.8<br>nC<br>**Drain-Source Diode Characteristics**<br>VSD<br>Source to Drain Diode  Forward Voltage VGS= 0V, IS= 6A(note 2)<br>0.8<br>1.2<br>V<br>trr<br>Reverse RecoveryTime(note 3)<br>IF= 6A, diF/dt= 100A/µs<br>17<br>26<br>ns<br>Qrr<br>Reverse RecoveryCharge<br>7<br>11<br>nC<br>and Maximum Ratings<br>~~a~~<br>~~=——aannae~~<br>~~SS~~|**Electrical Characteristics**TJ= 25°C unless otherwise noted<br>**Symbol**<br>**Parameter**<br>**Test Conditions**<br>**Min**<br>**Typ**<br>**Max**<br>**Units**<br>**Off Characteristics**<br>BVDSS<br>Drain to Source Breakdown Voltage ID= 250µA, VGS= 0V<br>40<br>V<br>∆BVDSS<br>∆TJ<br>Breakdown Voltage Temperature<br>Coefficient<br>ID= 250µA, referenced to 25°C<br>33<br>mV/°C<br>IDSS<br>Zero Gate Voltage Drain Current<br>VDS= 32V,  VGS= 0V<br>1<br>µA<br>TJ= 55°C<br>10<br>µA<br>IGSS<br>Gate to Source Leakage Current<br>VGS= ±20V,VDS= 0V<br>±100<br>nA<br>**On Characteristics**<br>VGS(th)<br>Gate to Source Threshold Voltage<br>VGS= VDS,  ID= 250µA<br>1<br>1.9<br>3<br>V<br>∆VGS(th)<br>∆TJ<br>Gate to Source Threshold Voltage<br>Temperature Coefficient<br>ID= 250µA, referenced to 25°C<br>-4.6<br>mV/°C<br>rDS(on)<br>Drain to Source On Resistance<br>VGS= 10V, ID= 6A<br>21<br>29<br>mΩ<br>VGS= 4.5V, ID= 4.5A<br>26<br>36<br>VGS= 10V, ID= 6A,TJ= 125°C<br>29<br>43<br>gFS<br>Forward Transconductance<br>VDS= 10V,ID= 6A<br>22<br>S<br> **(Note 2)**<br>**Dynamic Characteristics**<br>Ciss<br>Input Capacitance<br>VDS= 20V, VGS= 0V,<br>f = 1MHz<br>715<br>955<br>pF<br>Coss<br>Output Capacitance<br>105<br>140<br>pF<br>Crss<br>Reverse Transfer Capacitance<br>60<br>90<br>pF<br>Rg<br>Gate Resistance<br>f = 1MHz<br>1.1<br>Ω<br>**Switching Characteristics**<br>td(on)<br>Turn-On DelayTime<br>VDD= 20V, ID= 1A<br>VGS= 10V, RGEN= 6Ω<br>9<br>18<br>ns<br>tr<br>Rise Time<br>5<br>10<br>ns<br>td(off)<br>Turn-Off DelayTime<br>23<br>37<br>ns<br>tf<br>Fall Time<br>3<br>6<br>ns<br>Qg<br>Total Gate Charge<br>VDS= 20V, ID= 6A,VGS= 5V<br>7.7<br>11<br>nC<br>Qgs<br>Gate to Source Gate Charge<br>2.4<br>nC<br>Qgd<br>Gate to Drain “Miller”Charge<br>2.8<br>nC<br>**Drain-Source Diode Characteristics**<br>VSD<br>Source to Drain Diode  Forward Voltage VGS= 0V, IS= 6A(note 2)<br>0.8<br>1.2<br>V<br>trr<br>Reverse RecoveryTime(note 3)<br>IF= 6A, diF/dt= 100A/µs<br>17<br>26<br>ns<br>Qrr<br>Reverse RecoveryCharge<br>7<br>11<br>nC<br>and Maximum Ratings<br>~~a~~<br>~~=——aannae~~<br>~~SS~~|**Electrical Characteristics**TJ= 25°C unless otherwise noted<br>**Symbol**<br>**Parameter**<br>**Test Conditions**<br>**Min**<br>**Typ**<br>**Max**<br>**Units**<br>**Off Characteristics**<br>BVDSS<br>Drain to Source Breakdown Voltage ID= 250µA, VGS= 0V<br>40<br>V<br>∆BVDSS<br>∆TJ<br>Breakdown Voltage Temperature<br>Coefficient<br>ID= 250µA, referenced to 25°C<br>33<br>mV/°C<br>IDSS<br>Zero Gate Voltage Drain Current<br>VDS= 32V,  VGS= 0V<br>1<br>µA<br>TJ= 55°C<br>10<br>µA<br>IGSS<br>Gate to Source Leakage Current<br>VGS= ±20V,VDS= 0V<br>±100<br>nA<br>**On Characteristics**<br>VGS(th)<br>Gate to Source Threshold Voltage<br>VGS= VDS,  ID= 250µA<br>1<br>1.9<br>3<br>V<br>∆VGS(th)<br>∆TJ<br>Gate to Source Threshold Voltage<br>Temperature Coefficient<br>ID= 250µA, referenced to 25°C<br>-4.6<br>mV/°C<br>rDS(on)<br>Drain to Source On Resistance<br>VGS= 10V, ID= 6A<br>21<br>29<br>mΩ<br>VGS= 4.5V, ID= 4.5A<br>26<br>36<br>VGS= 10V, ID= 6A,TJ= 125°C<br>29<br>43<br>gFS<br>Forward Transconductance<br>VDS= 10V,ID= 6A<br>22<br>S<br> **(Note 2)**<br>**Dynamic Characteristics**<br>Ciss<br>Input Capacitance<br>VDS= 20V, VGS= 0V,<br>f = 1MHz<br>715<br>955<br>pF<br>Coss<br>Output Capacitance<br>105<br>140<br>pF<br>Crss<br>Reverse Transfer Capacitance<br>60<br>90<br>pF<br>Rg<br>Gate Resistance<br>f = 1MHz<br>1.1<br>Ω<br>**Switching Characteristics**<br>td(on)<br>Turn-On DelayTime<br>VDD= 20V, ID= 1A<br>VGS= 10V, RGEN= 6Ω<br>9<br>18<br>ns<br>tr<br>Rise Time<br>5<br>10<br>ns<br>td(off)<br>Turn-Off DelayTime<br>23<br>37<br>ns<br>tf<br>Fall Time<br>3<br>6<br>ns<br>Qg<br>Total Gate Charge<br>VDS= 20V, ID= 6A,VGS= 5V<br>7.7<br>11<br>nC<br>Qgs<br>Gate to Source Gate Charge<br>2.4<br>nC<br>Qgd<br>Gate to Drain “Miller”Charge<br>2.8<br>nC<br>**Drain-Source Diode Characteristics**<br>VSD<br>Source to Drain Diode  Forward Voltage VGS= 0V, IS= 6A(note 2)<br>0.8<br>1.2<br>V<br>trr<br>Reverse RecoveryTime(note 3)<br>IF= 6A, diF/dt= 100A/µs<br>17<br>26<br>ns<br>Qrr<br>Reverse RecoveryCharge<br>7<br>11<br>nC<br>and Maximum Ratings<br>~~a~~<br>~~=——aannae~~<br>~~SS~~|**FDS8949_F085 Dual N-Channel Logic Level PowerTrench® MOSFET**|
|---|---|---|---|
|**Notes:**||||
|**1:** RθJAis the sum of the junction-to-case and case-to- ambient  thermal resistance where the case thermal reference is defined  as the solder mounting surface of the||is the sum of the junction-to-case and case-to- ambient  thermal resistance where the case thermal reference is defined  as the solder mounting surface of the|is the sum of the junction-to-case and case-to- ambient  thermal resistance where the case thermal reference is defined  as the solder mounting surface of the|
|drain pins. RθJCis guaranteed by design  while RθJAis determined by the user’s board design.||||
|Scale 1:1 on letter size paper<br>**a)**81°C/W when<br>mounted on a 1in2<br>pad of 2 oz copper<br>**b)**135°C/W when mounted on a<br>minimum pad .<br>iH<br>bos||||



**2:** Pulse Test: Pulse Width < 300 us, Duty Cycle < 2.0%. 

- **3:** Starting TJ = 25°C, L = 1mH, IAS = 7.3A, VDD = 40V, VGS = 10V. 

FDS8949_F085 Rev. A 

www.fairchildsemi.com 

**2** 

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Typical Characteristics  TJ = 25°C unless otherwise noted<br>20 3.0<br>VGS = 10V PULSE DURATION = 300 µ s<br>VGS = 3.5V DUTY CYCLE = 20%MAX<br>16 2.5<br>VGS = 4.5V VGS = 3.0V<br>12 2.0 VGS =  3.5V<br>8 VGS = 3.0V 1.5 VGS = 4.5V<br>4 1.0<br>PULSE DURATION = 300 µ s VGS = 10V<br>DUTY CYCLE = 20%MAX<br>0 0.5<br>0.0 0.5 1.0 1.5 2.0 2.5 0 4 8 12 16 20<br>VDS, DRAIN TO SOURCE VOLTAGE (V) ID, DRAIN CURRENT(A)<br>Figure 1.  On Region Characteristics Figure 2.  Normalized On-Resistance vs Drain<br>Current and Gate Voltage<br>1.6 70<br> ID = 6A ID = 3.5A PULSE DURATION = 300 µ s<br>VGS = 10V 60 DUTY CYCLE = 20%MAX<br>1.4<br>50<br>1.2<br>40<br>1.0 TJ = 125 [o] C<br>30<br>0.8<br>20<br>TJ = 25 [o] C<br>0.6 10<br>-50 -25 0 25 50 75 100 125 150 2 4 6 8 10<br>TJ, JUNCTION TEMPERATURE ( [o] C) VGS, GATE TO SOURCE VOLTAGE (V)<br>Figure 3.  Normalized On Resistance vs Junction  Figure 4.   On-Resistance vs Gate to Source<br>Temperature Voltage<br>20 100<br>PULSE DURATION = 300 µ s<br>DUTY CYCLE = 20%MAX VGS = 0V<br>16 VDD = 10V 10<br>TJ = 125 [o] C<br>12 1<br>TJ = 125 [o] C TJ = 25 [o] C<br>8 TJ = 25 [o] C 0.1<br>4 TJ = -55 [o] C 0.01 TJ = -55 [o] C<br>0 1E-3<br>1.5 2.0 2.5 3.0 3.5 4.0 0.2 0.4 0.6 0.8 1.0 1.2<br>VGS, GATE TO SOURCE VOLTAGE (V) VSD, BODY DIODE FORWARD VOLTAGE (V)<br>Figure 5.  Transfer Characteristics Figure 6.  Source to Drain  Diode Forward<br>Voltage vs Source Current<br>NORMALIZED<br>, DRAIN CURRENT (A)<br>ID<br>DRAIN TO SOURCE ON-RESISTANCE<br>)<br>Ω<br>m<br>(<br>, DRAIN TO<br>NORMALIZED rDS(on)<br>SOURCE ON-RESISTANCE<br> DRAIN TO SOURCE ON-RESISTANCE<br>, DRAIN CURRENT (A)<br>ID<br>, REVERSE DRAIN CURRENT (A)<br>IS<br>**----- End of picture text -----**<br>


FDS8949_F085 Rev. A 

www.fairchildsemi.com 

**3** 

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Typical Characteristics  TJ = 25°C unless otherwise noted<br>10 103<br>VDD = 10V<br>Ciss<br>8<br>VDD = 20V VDD = 30V<br>6 Coss<br>102<br>4 Crss<br>2<br>f = 1MHz<br>0 101 VGS = 0V<br>0 4 8 12 16 0.1 1 10 40<br>Qg, GATE CHARGE(nC) VDS, DRAIN TO SOURCE VOLTAGE (V)<br>Figure 7.  Gate Charge Characteristics Figure 8.  Capacitance vs Drain to Source Voltage<br>10 7<br>6<br>5<br>VGS = 10V<br>4<br>1 TJ = 25 [o] C<br>3 VGS = 4.5V<br>TJ = 125 [o] C<br>2<br>1 o<br>R θ JA = 81 C/W<br>0.1 0<br>10-3 10-2 10-1 100 101 102 103 25 50 75 100 125 150<br>tAV, TIME IN AVALANCHE(ms) TA, Ambient TEMPERATURE ( [o] C)<br>Figure 9.  Unclamped Inductive Switching  Figure 10.  Maximum Continuous Drain Current vs<br>Capability Ambient Temperature<br>100 100<br>VGS = 10V<br>10 100us<br>1ms<br>10 SINGLE PULSE<br>1 10ms R θ JA = 135°C/W<br>TA = 25°C<br>LIMITED BY<br>PACKAGE 100ms<br>0.1 OPERATION IN THIS  SINGLE PULSE 1s<br>AREA MAY BE  TJ = MAX RATED 10s SINGLE PULSE<br>LIMITED BY rDS(on) TA = 25 [o] C DC 1<br>0.01 0.7<br>0.01 0.1 1 10 100 300 10-4 10-3 10-2 10-1 100 101 102 103<br>VDS, DRAIN-SOURCE VOLTAGE (V) t, PULSE WIDTH (s)<br>Figure 11.  Forward Bias Safe Operating Area Figure 12.  Single Pulse Maximum Power<br>Dissipation<br>CAPACITANCE (pF)<br>, GATE TO SOURCE VOLTAGE(V)<br>GS<br>V<br>)<br>A<br>(<br>, DRAIN CURRENT (A)<br>, AVALANCHE CURRENTIAS ID<br>, DRAIN CURRENT (A)<br>ID<br>, PEAK TRANSIENT POWER (W)P)(PK<br>**----- End of picture text -----**<br>


FDS8949_F085 Rev. A 

www.fairchildsemi.com 

**4** 

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Typical Characteristics  TJ = 25°C unless otherwise noted<br>2<br>DUTY CYCLE-DESCENDING ORDER<br>1<br>D = 0.5<br>      0.2<br>      0.1<br>0.1       0.05 P(PK)<br>      0.02<br>      0.01<br>t1<br>0.01 t2<br>R θ JA(t) = r(t)*R θ JA<br>R θ JA = 135 [o] C/W                    TJ-TA =P*R θ JA<br>DUTY FACTOR: D = t1/t2<br>SINGLE PULSE<br>1E-3<br>10-3 10-2 10-1 100 101 102 103<br>t, RECTANGULAR PULSE DURATION (s)<br>Figure 13.  Transient Thermal Response Curve<br>IMPEDANCE, ZJA θ<br>NORMALIZED THERMAL<br>**----- End of picture text -----**<br>


FDS8949_F085 Rev. A 

www.fairchildsemi.com 

**5** 

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AccuPower™ FRFET[®] PowerTrench[®] The Power Franchise[®] Auto-SPM™ Global Power Resource[SM] PowerXS™ p ® Build it Now™CorePLUS™ Green FPS™Green FPS™ e-Series™ Programmable Active Droop™QFET[®] Pavewer tm CorePOWER™ G _max_ ™ QS™ TinyBoost™ _CROSSVOLT_ ™ GTO™ Quiet Series™ TinyBuck™ CTL™ IntelliMAX™ RapidConfigure™ TinyCalc™ Current Transfer Logic™ ISOPLANAR™ ™ TinyLogicTINYOPTO™[®] DEUXPEED[®] MegaBuck™ Dual Cool™ MICROCOUPLER™ Saving our world, 1mW/W/kW at a time™ TinyPower™ EcoSPARK[®] MicroFET™ SignalWise™ TinyPWM™ EfficentMax™ MicroPak™ SmartMax™ TinyWire™ TriFault Detect™ ® MicroPak2™ SMART START™ TRUECURRENT™* tm MillerDrive™ SPM[®] Fairchild[®] MotionMax™ STEALTH™ μSerDes™ Fairchild Semiconductor[®] Motion-SPM™ SuperFET™ FACT Quiet Series™ OptiHiT™ SuperSOT™-3 1Z3.... FACT[®] OPTOLOGIC[®] SuperSOT™-6 UHC[®] FAST[®] OPTOPLANAR[®] SuperSOT™-8 Ultra FRFET™ FastvCore™ ® SupreMOS™ UniFET™ FETBench™FlashWriterFPS™[® ] * PDP SPM™Power-SPM™tm SyncFET™Sync-Lock™®* VCX™VisualMax™XS™ F-PFS™ [ GENERALSYSTEM 

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|**Datasheet Identification**|**Product Status**|**Definition**|
|---|---|---|
|Advance Information|Formative / In Design|Datasheet contains the design specifications for product development. Specifications<br>may change in any manner without notice.|
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Rev. I47 

FDS8949_F085 Rev. A 

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