FDS8935

## **Is Now Part of** 

**To learn more about ON Semiconductor, please visit our website at www.onsemi.com** 

ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 

## **FDS8935** 

## **November 2010** 

## **Dual P-Channel PowerTrench[®] MOSFET -80 V, -2.1 A, 183 m** Ω 

## **General Description** 

## **Features** 

Max rDS(on) = 183 mΩ at VGS = -10 V, ID = -2.1 A This P-channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has Max rDS(on) = 247 mΩ at VGS = -4.5 V, ID = -1.9 A been optimized for rDS(on), switching performance and ruggedness. 

High performance trench technology for extremely low rDS(on) 

High power and current handling capability in a widely used surface mount package 

## **Applications** 

100% UIL Tested 

Load Switch 

|RoHS Compliant|||Load Switch<br>Synchronous Rectifier|Load Switch<br>Synchronous Rectifier|Load Switch<br>Synchronous Rectifier|Load Switch<br>Synchronous Rectifier|||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
|**D2**|||||||||||||
|Pin 1<br>**D1**<br>**D1**<br>**D2**<br>**S2**<br>**S1**<br>**G1**<br>&||**G2**|**D2**<br>**D2**<br>**D1**<br>**D1**||**5**<br>**6**<br>**7**<br>**8**<br>**5**<br>**6**<br>**7**<br>**8**<br>~~4 ~~|**3**<br>**2**<br>**1**<br>**4**<br>**4**<br>**3**<br>**2**<br>**1**<br>**Q2**<br>**Q1**<br> ~~cb~~|||**G2**<br>**S1**<br>**G1**<br>**S2**||||
|**SO-8**|||||||||||||
|**MOSFET Maximum Ratings  **TA= 25 °C unless otherwise noted|= 25 °C unless otherwise noted||||||||||||
|**Symbol**||**Parameter**||||||**Ratings**||||**Units**|
|VDS<br>Drain to Source Voltage|||||||||-80|||V|
|VGS<br>Gate to Source Voltage|||||||||±20|||V|
|ID<br>Drain Current   -Continuous<br>-Pulsed|Drain Current   -Continuous|Drain Current   -Continuous|||||||-2.1<br>-10|||A|
|EAS<br>Single Pulse Avalanche Energy||||||(Note 3)|||37|||mJ|
|PD<br>Power Dissipation                                                  T<br>Power Dissipation                                                  T|ation                                                  T<br>ation                                                  T|ation                                                  TA= 25 °C<br>ation                                                  TA= 25 °C|= 25 °C<br>= 25 °C||= 25 °C<br>= 25 °C|= 25 °C(Note 1a)<br>= 25 °C(Note 1b)|||3.1<br>1.6|||W|
|TJ, TSTG<br>Operatingand Storage Junction Tem|e Junction Temperature Range|||||||-55 to +150|-55 to +150|||°C|
|**Thermal Characteristics**|||||||||||||
|RθJC<br>Thermal Resistance, Junction to Case<br>RθJA<br>Thermal Resistance, Junction to Ambient<br>~~[-~~<br>~~77)~~|Thermal Resistance, Junction to Case<br>Thermal Resistance, Junction to Ambient||Thermal Resistance, Junction to Case<br>Thermal Resistance, Junction to Ambient|Thermal Resistance, Junction to Case<br>Thermal Resistance, Junction to Ambient|Thermal Resistance, Junction to Case<br>Thermal Resistance, Junction to Ambient|Thermal Resistance, Junction to Case(Note 1)<br>Thermal Resistance, Junction to Ambient(Note 1a)|||40<br>78|||°C/W|
|**Package Marking and Ordering Information**|||||||||||||
|**Device Marking**<br>**Device**<br>FDS8935<br>FDS8935<br>~~_~~||**Package**<br>SO-8|||**Reel Size**<br>13 ’’|||**Tape Width**<br>12 mm|||**Quantity**<br>2500 units||



**1** 

©2010 Fairchild Semiconductor Corporation FDS8935 Rev.C 

www.fairchildsemi.com 

## **Electrical Characteristics** TJ = 25°C unless otherwise noted 

|**Off Characteristics**<br>**On Characteristics**<br>**Dynamic Characteristics**<br>**Symbol**<br>**Parameter**<br>**Test Conditions**<br>**Min**<br>**Typ**<br>**Max**<br>**Units**<br>BVDSS<br>Drain to Source Breakdown Voltage<br>ID= -250μA, VGS= 0 V<br>-80<br>V<br>ΔBVDSS<br>ΔTJ<br>Breakdown Voltage Temperature<br>Coefficient<br>ID= -250μA, referenced to 25 °C<br>-61<br>mV/°C<br>IDSS<br>Zero Gate Voltage Drain Current<br>VDS= -64 V, VGS = 0 V<br>-1<br>μA<br>IGSS<br>Gate to Source Leakage Current<br>VGS= ±20 V, VDS = 0 V<br>±100<br>nA<br>VGS(th)<br>Gate to Source Threshold Voltage<br>VGS= VDS,  ID= -250μA<br>-1<br>-1.8<br>-3<br>V<br>ΔVGS(th)<br>ΔTJ<br>Gate to Source Threshold Voltage<br>Temperature Coefficient<br>ID= -250μA, referenced to 25 °C<br>5<br>mV/°C<br>rDS(on)<br>Static Drain to Source On Resistance<br>VGS= -10 V,  ID= -2.1 A<br>148<br>183<br>mΩ<br>VGS= -4.5 V, ID= -1.9 A<br>176<br>247<br>VGS= -10 V, ID= -2.1 A,TJ= 125 °C<br>249<br>308<br>gFS<br>Forward Transconductance<br>VDS= -10 V,  ID= -2.1 A<br>6.4<br>S<br>Ciss<br>Input Capacitance<br>VDS= -40 V, VGS= 0 V,<br>f = 1MHz<br>661<br>879<br>pF<br>Coss<br>Output Capacitance<br>47<br>63<br>pF<br>Crss<br>Reverse Transfer Capacitance<br>24<br>36<br>pF<br>Rg<br>Gate Resistance<br>6<br>Ω<br>~~re~~<br>~~—————~~||**FDS8935 Dual P-Channel PowerTrench® MOSFET**|
|---|---|---|
|**Switching Characteristics**|||
|td(on)<br>Turn-On DelayTime<br>VDD= -40 V, ID= -2.1 A,<br>VGS= -10 V, RGEN= 6Ω<br>5<br>10<br>ns<br>tr<br>Rise Time<br>3<br>10<br>ns<br>td(off)<br>Turn-Off DelayTime<br>22<br>36<br>ns<br>tf<br>Fall Time<br>3<br>10<br>ns<br>Qg(TOT)<br>Total Gate Charge<br>VGS = 0 V to -10 V<br>VDD= -40 V,<br>ID= -2.1 A<br>13<br>19<br>nC<br>Qg(TOT)<br>Total Gate Charge<br>VGS = 0 V to -5 V<br>7<br>10<br>nC<br>Qgs<br>Gate to Source Charge<br>1.6<br>nC<br>Qgd<br>Gate to Drain “Miller” Charge<br>2.6<br>nC<br>~~eee~~<br>~~—————~~|||
|**Drain-Source Diode Characteristics**|||
|VSD<br>Source to Drain Diode  Forward Voltage<br>VGS = 0 V, IS = -2.1 A(Note 2)<br>-1.8<br>-1.3<br>V<br>VGS = 0 V, IS = -1.3 A(Note 2)<br>-0.8<br>-1.2<br>trr<br>Reverse RecoveryTime<br>IF= -2.1 A, di/dt = 300 A/μs<br>19<br>30<br>ns<br>Qrr<br>Reverse RecoveryCharge<br>34<br>54<br>nC<br>~~a~~|||
|NOTES:|||
|1. RθJAis determined with the device mounted on a 1in2pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJCis guaranteed by design while RθCAis determined by|||
|the user's board design.|||
|b)135 °C/W when<br>mounted on a<br>minimun pad<br>a)78 °C/W when<br>mounted on a  1 in2<br>pad of 2 oz copper<br>~~m~~|||
|2. Pulse Test: Pulse Width < 300μs, Duty cycle < 2.0%.|||
|3. Starting TJ= 25 °C,  L = 3.0 mH, IAS= -5.0 A, VDD= -80V, VGS= -10V.|||



www.fairchildsemi.com 

**2** 

©2010 Fairchild Semiconductor Corporation FDS8935 Rev.C 

**Typical Characteristics** TJ = 25 °C unless otherwise noted 

**==> picture [469 x 576] intentionally omitted <==**

**----- Start of picture text -----**<br>
10 3.0<br>VGS = -10 V VGS = -3 V<br>8 VGS =  -5 V 2.5<br>VGS = -4 V<br>VGS = -3.5 V 2.0 VGS = -3.5 V<br>6<br>1.5<br>4 V GS  = -3 V<br>1.0<br>2 VGS = -4 V VGS = -5 V VGS = -10 V<br>PULSE DURATION = 80DUTY CYCLE = 0.5% MAX  μ s 0.5 PULSE DURATION = 80  μ s<br>DUTY CYCLE = 0.5% MAX<br>0 0.0<br>0 1 2 3 4 5 0 2 4 6 8 10<br>-VDS, DRAIN TO SOURCE VOLTAGE (V) -ID, DRAIN CURRENT (A)<br>Figure 1.  On-Region Characteristics Figure 2.  Normalized On-Resistance<br>vs Drain Current and Gate Voltage<br>2.0 800<br>ID = - 2.1 A<br>1.8 V GS  = -10 V ID = -2.1 A PULSE DURATION = 80DUTY CYCLE = 0.5% MAX  μ s<br>1.6 600<br>1.4<br>1.2 400 T J  = 150  [o] C<br>1.0<br>0.8 200<br>0.6 TJ = 25  [o] C<br>0.4 0<br>-75 -50 -25 0 25 50 75 100 125 150 2 4 6 8 10<br>TJ, JUNCTION TEMPERATURE ( [o] C) -VGS, GATE TO SOURCE VOLTAGE (V)<br>Figure 3.  Normalized  On- Resistance                                         Figure 4.   On-Resistance vs  Gate to<br>vs Junction Temperature Source Voltage<br>10 20<br>PULSE DURATION = 80  μ s 10 VGS = 0 V<br>DUTY CYCLE = 0.5% MAX<br>8<br>VDS = -5 V<br>1<br>6 TJ = 150  [o] C<br>TJ = 25  [o] C<br>0.1<br>4<br>2 TJ = 150 [ o] C TJ = 25  [o] C 0.01 TJ = -55  [o] C<br>TJ = -55  [o] C<br>0 0.001<br>1 2 3 4 5 0.0 0.2 0.4 0.6 0.8 1.0 1.2<br>-VGS, GATE TO SOURCE VOLTAGE (V) -VSD, BODY DIODE FORWARD VOLTAGE (V)<br>Figure 5.  Transfer Characteristics Figure 6.    Source to Drain  Diode<br>Forward Voltage vs Source Current<br>NORMALIZED<br>, DRAIN CURRENT (A)<br>D<br>-I<br>DRAIN TO SOURCE ON-RESISTANCE<br>)<br>Ω<br>m<br>(<br>DRAIN TO<br>,<br>NORMALIZED<br>rDS(on)<br>SOURCE ON-RESISTANCE<br> DRAIN TO SOURCE ON-RESISTANCE<br>, DRAIN CURRENT (A)<br>D<br>-I , REVERSE DRAIN CURRENT (A)<br>S<br>-I<br>**----- End of picture text -----**<br>


www.fairchildsemi.com 

**3** 

©2010 Fairchild Semiconductor Corporation FDS8935 Rev.C 

**Typical Characteristics** TJ = 25 °C unless otherwise noted 

**==> picture [469 x 575] intentionally omitted <==**

**----- Start of picture text -----**<br>
10 1000<br>ID = -2.1 A VDD = -20 V Ciss<br>8<br>VDD = -40 V<br>6<br>100 Coss<br>VDD = -60 V<br>4<br>2 f = 1 MHz Crss<br>VGS = 0 V<br>0 10<br>0 3 6 9 12 15 0.1 1 10 100<br>Qg, GATE CHARGE (nC) -VDS, DRAIN TO SOURCE VOLTAGE (V)<br>Figure 7.  Gate Charge Characteristics Figure 8.  Capacitance vs Drain<br>to Source Voltage<br>2.2<br>2.5<br>2.0<br>2.0<br>TJ = 25 [ o] C<br>1.8 VGS = -10 V<br>1.5<br>1.6<br>TJ = 100 [ o] C 1.0 VGS = -4.5 V<br>1.4<br>Limited by package<br>TJ = 125  [o] C<br>1.2 0.5<br>R θ JA = 78  [o] C/W<br>1.0<br>0.0<br>0.1 1 10<br>25 50 75 100 125 150<br>tAV, TIME IN AVALANCHE (ms) TA, Ambient TEMPERATURE ( [o] C)<br>Figure 9. Unclamped Inductive                                  Figure 10.  Maximum Continuous Drain<br>Switching Capability Current vs Ambient Temperature<br>20 1000<br>10 100 us V GS  = -10 V SINGLE PULSER θ JA  = 135  [o] C/W<br>1 ms 100 TA = 25  [o] C<br>1<br>10 ms<br>THIS AREA IS<br>LIMITED BY rDS(on) 100 ms 10<br>0.1<br>SINGLE PULSE<br>TJ = MAX RATED 1 s<br>R θ JA  = 135 [ o] C/W 10 s<br>0.01 TA = 25 [ o] C DC 1<br>0.0050.1 1 10 100 300 0.510-4 10-3 10-2 10-1 1 10 100 1000<br>-VDS, DRAIN to SOURCE VOLTAGE (V) t, PULSE WIDTH (s)<br>Figure 11.  Forward Bias Safe                                  Figure 12.  Single  Pulse Maximum<br>Operating Area Power  Dissipation<br>CAPACITANCE (pF)<br>, GATE TO SOURCE VOLTAGE (V)<br>GS<br>-V<br>DRAIN CURRENT (A)<br>,<br>D<br>-I<br>, AVALANCHE CURRENT (A)<br>AS<br>-I<br>, DRAIN CURRENT (A)<br>D<br>-I<br>, PEAK TRANSIENT POWER (W)P)(PK<br>**----- End of picture text -----**<br>


www.fairchildsemi.com 

**4** 

©2010 Fairchild Semiconductor Corporation FDS8935 Rev.C 

**==> picture [470 x 196] intentionally omitted <==**

**----- Start of picture text -----**<br>
Typical Characteristics  TJ = 25 °C unless otherwise noted<br>2<br>DUTY CYCLE-DESCENDING ORDER<br>1<br>D = 0.5<br>       0.2<br>0.1        0.1       0.05 PDM<br>       0.02<br>       0.01<br>t1<br>0.01 t 2<br>SINGLE PULSE NOTES:<br>DUTY FACTOR: D = t 1 /t 2<br>R θ JA = 135  [o] C/W PEAK TJ = PDM x Z θJA  x R θJA  + TA<br>0.001<br>10-4 10-3 10-2 10-1 1 10 100 1000<br>t, RECTANGULAR PULSE DURATION (sec)<br>Figure 13.  Junction-to-Ambient Transient Thermal Response Curve<br>ZJA θ<br>IMPEDANCE,<br>NORMALIZED THERMAL<br>**----- End of picture text -----**<br>


www.fairchildsemi.com 

**5** 

©2010 Fairchild Semiconductor Corporation FDS8935 Rev.C 

## **TRADEMARKS** 

**==> picture [485 x 216] intentionally omitted <==**

**----- Start of picture text -----**<br>
|||||||||
|---|---|---|---|---|---|---|---|
|The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not|
|intended to be an exhaustive list of all such trademarks.|
|AccuPower™|F-PFS™|Power-SPM™|®*|
|Auto-SPM™|FRFET|[®]|PowerTrench|[®]|[fc|GENERALSYSTEM|
|Build it Now™|Global Power Resource|[SM]|PowerXS™|The Power Franchise|[®]|
|CorePLUS™|Green FPS™|Programmable Active Droop™|0|®|
|CorePOWER™|Green FPS™ e-Series™|QFET|[®]|wer|
|CROSSVOLT|™|G|max|™|QS™|Pave|tm|
|CTL™|GTO™|Quiet Series™|TinyBoost™|
|Current Transfer Logic™DEUXPEED|[®]|IntelliMAX™ISOPLANAR™|RapidConfigure™™|TinyBuck™TinyCalc™|
|Dual Cool™|MegaBuck™|TinyLogicTINYOPTO™|[®]|
|EcoSPARK|[®]|MICROCOUPLER™|Saving our world, 1mW/W/kW at a time™|
|EfficentMax™|MicroFET™|SignalWise™|TinyPower™|
|ESBC™|MicroPak™|SmartMax™|TinyPWM™|
|®|MicroPak2™|SMART START™|TinyWire™TriFault Detect™|
|tm|MillerDrive™|SPM|[®]|TRUECURRENT™*|
|FairchildFairchild Semiconductor|[®]|[®]|MotionMax™Motion-SPM™|STEALTH™SuperFET™|μSerDes™|
|FACT Quiet Series™|OptiHiT™|SuperSOT™-3|
|FACT|[®]|OPTOLOGIC|[®]|SuperSOT™-6|
|FAST|[®]|OPTOPLANAR|[®]|SuperSOT™-8|UHC|[®]|
|FastvCore™|®|SupreMOS™|Ultra FRFET™|
|FETBench™FlashWriter|[® ]|*|PDP SPM™tm|SyncFET™Sync-Lock™|UniFET™VCX™VisualMax™|
|FPS™|
|XS™|

**----- End of picture text -----**<br>


*Trademarks of System General Corporation, used under license by Fairchild Semiconductor. 

## **DISCLAIMER** 

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. 

## **LIFE SUPPORT POLICY** 

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. 

As used here in: 

1. Life support devices or systems are devices or systems which, (a) are 2. A critical component in any component of a life support, device, or intended for surgical implant into the body or (b) support or sustain life, system whose failure to perform can be reasonably expected to cause and (c) whose failure to perform when properly used in accordance with the failure of the life support device or system, or to affect its safety or instructions for use provided in the labeling, can be reasonably effectiveness. expected to result in a significant injury of the user. 

## **ANTI-COUNTERFEITING POLICY** 

Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Fairchild’s Anti-Counterfeiting Policy is also stated on our external website, www.Fairchildsemi.com, under Sales Support. 

Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Fairchild’s full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. 

## **PRODUCT STATUS DEFINITIONS Definition of Terms** 

**==> picture [464 x 97] intentionally omitted <==**

**----- Start of picture text -----**<br>
||||
|---|---|---|
|Datasheet Identification|Product Status|Definition|
|Advance Information|Formative / In Design|Datasheet contains the design specifications for product development. Specifications|
|may change in any manner without notice.|
|Datasheet contains preliminary data; supplementary data will be published at a later|
|Preliminary|First Production|date. Fairchild Semiconductor reserves the right to make changes at any time without|
|notice to improve design.|
|No Identification Needed|Full Production|Datasheet contains final specifications. Fairchild Semiconductor reserves the right to|
|make changes at any time without notice to improve the design.|
|Obsolete|Not In Production|Datasheet contains specifications on a product that is discontinued by Fairchild|
|Semiconductor. The datasheet is for reference information only.|

**----- End of picture text -----**<br>


Rev. I48 

www.fairchildsemi.com 

©2010 Fairchild Semiconductor Corporation FDS8935 Rev.C 

**6** 

ON Semiconductor and      are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 

## **PUBLICATION ORDERING INFORMATION** 

**N. American Technical Support** : 800−282−9855 Toll Free **ON Semiconductor Website** : **www.onsemi.com** USA/Canada 

## **LITERATURE FULFILLMENT** : 

Literature Distribution Center for ON Semiconductor 

**Order Literature** : http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative 

19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA **Europe, Middle East and Africa Technical Support: Phone** : 303−675−2175 or 800−344−3860 Toll Free USA/Canada Phone: 421 33 790 2910 **Fax** : 303−675−2176 or 800−344−3867 Toll Free USA/Canada **Japan Customer Focus Center Email** : orderlit@onsemi.com Phone: 81−3−5817−1050 

© Semiconductor Components Industries, LLC 

www.onsemi.com 

**www.onsemi.com** 

**1**