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FDS8858CZ
Dual MOSFET, Complementary N and P Channel, 30 V, 30 V, 8.6 A, 8.6 A, 0.017 ohm
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- Manufacturer: ONSEMI
- Product type: Dual MOSFETs
- Transistor Polarity:N and P Channel; Continuous Drain Current Id:8.6A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.017ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.6V;
- MSL: -
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 8Pins
- Channel Type: Complementary N and P Channel
- Product Range: -
- Qualification: -
- Transistor Case Style: SOIC
- Operating Temperature Max: 150°C
- Power Dissipation N Channel: 2W
- Power Dissipation P Channel: 2W
- Drain Source Voltage Vds N Channel: 30V
- Drain Source Voltage Vds P Channel: 30V
- Continuous Drain Current Id N Channel: 8.6A
- Continuous Drain Current Id P Channel: 8.6A
- Drain Source On State Resistance N Channel: 0.017ohm
- Drain Source On State Resistance P Channel: 0.017ohm
| Delivery and price | |
|---|---|
| Units per pack | 1000 |
| Price | 0.318 € |
| Current stock | 1000+ |
| Lead time | 30 days |
Datasheet
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This literature is subject to all applicable copyright laws and is not for resale in any manner. **==> picture [58 x 8] intentionally omitted <==** **----- Start of picture text -----**<br> October 2011<br>**----- End of picture text -----**<br> ## **FDS8858CZ** ## **Dual N & P-Channel PowerTrench[®] MOSFET** **N-Channel: 30V, 8.6A, 17.0m** Ω **P-Channel: -30V, -7.3A, 20.5m** Ω ## **Features** Q1: N-Channel Max rDS(on) = 17mΩ at VGS = 10V, ID = 8.6A Max rDS(on) = 20mΩ at VGS = 4.5V, ID = 7.3A ## Q2: P-Channel Max rDS(on) = 20.5mΩ at VGS = -10V, ID = -7.3A Max rDS(on) = 34.5mΩ at VGS = -4.5V, ID = -5.6A High power and handing capability in a widely used surface mount package ## **General Description** These dual N and P-Channel enhancement mode power MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required. ## **Applications** Fast switching speed Inverter Synchronous Buck **==> picture [174 x 107] intentionally omitted <==** **----- Start of picture text -----**<br> D2<br>D2<br>D1<br>D1<br>SO-8<br>G2<br>S2<br>G1<br>Pin 1 S1<br>Za<br>**----- End of picture text -----**<br> **==> picture [157 x 107] intentionally omitted <==** **----- Start of picture text -----**<br> D2 5 Q2 4 G2<br>D2 6 3 S2<br>D1 7 Q1 2 G1<br>D1 8 1 S1<br>ee<br>**----- End of picture text -----**<br> **MOSFET Maximum Ratings** TA = 25°C unless otherwise noted |**Symbol**||**Parameter**|||||**Q1**||**Q2**|**Units**| |---|---|---|---|---|---|---|---|---|---|---| |VDS<br>Drain to Source Volta|Drain to Source Voltage||||||30||-30|V| |VGS<br>Gate to Source Voltage|||||||±20||±25|V| |ID<br>Drain Current - Continuous T<br>- Pulsed||Drain Current - Continuous TA= 25°C||= 25°C|||8.6<br>20||-7.3<br>-20|A| |EAS<br>Single Pulse Avalanche Energy(Note 3)||(Note 3)|(Note 3)|(Note 3)|(Note 3)||50||11|mJ| |Power Dissipation for Dual Operation||||||||2.0||| |PD<br>Power Dissipation for Single Operation T|||eration TA= 25°C|= 25°C|= 25°C(Note 1a)|||1.6||W| |T|T|T|TA= 25°C||= 25°C(Note 1c)|||0.9||| |TJ, TSTG<br>Operatingand Storage Junction Temperature Range|||||||-55 to +150|-55 to +150|-55 to +150|°C| |**Thermal Characteristics**||||||||||| |**Package Marking and Ordering Information**<br>RθJC<br>Thermal Resistance, Junction to Case(Note 1)<br>40<br>°C/W<br>RθJA<br>Thermal Resistance, Junction to Ambient(Note 1a)<br>78<br>**Device Marking**<br>**Device**<br>**Package**<br>**Reel Size**<br>**Tape Width**<br>**Quantity**<br>FDS8858CZ<br>FDS8858CZ<br>SO-8<br>13”<br>12mm<br>2500 units<br>~~[7a~~||||||||||| ©2011 Fairchild Semiconductor Corporation **1** www.fairchildsemi.com FDS8858CZ Rev.C ## **Electrical Characteristics** TJ = 25°C unless otherwise noted |**Electrica**|**l Characteristics **TJ= 25°C un|less otherwise noted|||||| |---|---|---|---|---|---|---|---| |**Symbol**|**Parameter**|**Test Conditions**|**Type**|**Min**|**Typ**|**Max**|**Units**| |**Off Characteristics**|||||||| |BVDSS|Drain to Source Breakdown Voltage|ID= 250μA, VGS= 0V<br>ID= -250μA, VGS= 0V|Q1<br>Q2|30<br>-30|||V| |ΔBVDSS<br>ΔTJ|Breakdown Voltage Temperature<br>Coefficient|ID= 250μA, referenced to 25°C<br>ID= -250μA, referenced to 25°C|Q1<br>Q2||22<br>-22||mV/°C| |IDSS|Zero Gate Voltage Drain Current|VDS= 24V, VGS= 0V<br>VDS= -24V, VGS = 0V|Q1<br>Q2|||1<br>-1|μA| |IGSS|Gate to Source Leakage Current|VGS= ±20V, VDS= 0V<br>VGS= ±25V, VDS = 0V|Q1<br>Q2|||±10<br>±10|μA| |**On Characteristics**|||||||| |VGS(th)|Gate to Source Threshold Voltage|VGS= VDS, ID= 250μA<br>VGS= VDS, ID= -250μA|Q1<br>Q2|1<br>-1|1.6<br>-2.1|3<br>-3|V| |ΔVGS(th)<br>ΔTJ|Gate to Source Threshold Voltage<br>Temperature Coefficient|ID= 250μA, referenced to 25°C<br>ID= -250μA, referenced to 25°C|Q1<br>Q2||-5.4<br>6.0||mV/°C| |rDS(on)|Static Drain to Source On Resistance|VGS= 10V, ID= 8.6A<br>VGS= 4.5V, ID= 7.3A<br>VGS= 10V, ID= 8.6A, TJ = 125°C|Q1||12.4<br>15.2<br>17.7|17.0<br>20.0<br>24.3|mΩ| |||VGS= -10V, ID= -7.3A<br>VGS= -4.5V, ID= -5.6A<br>VGS= -10V, ID= -7.3A, TJ = 125°C|<br>Q2||17.1<br>26.5<br>24.0|20.5<br>34.5<br>28.8|| |gFS|Forward Transconductance|VDS= 5V, ID= 8.6A<br>VDS= -5V, ID= -7.3A|Q1<br>Q2||27<br>21||S| |**Dynamic Characteristics**|||||||| |Ciss|Input Capacitance|Q1<br>VDS= 15V, VGS= 0V, f = 1MHZ<br>Q2<br>VDS= -15V, VGS= 0V, f = 1MHZ|Q1<br>Q2||905<br>1675|1205<br>2230|pF| |Coss|Output Capacitance||Q1<br>Q2||180<br>290|240<br>390|pF| |Crss|Reverse Transfer Capacitance||Q1<br>Q2||110<br>260|165<br>390|pF| |Rg|Gate Resistance|f = 1MHz|Q1<br>Q2||1.3<br>4.4||Ω| |**Switching Characteristics**|||||||| |td(on)|Turn-On Delay Time|Q1<br>VDD= 15V, ID= 8.6A,<br>VGS= 10V, RGEN= 6Ω<br>Q2<br>VDD= -15V, ID= -7.3A,<br>VGS= -10V, RGEN= 6Ω|Q1<br>Q2||7<br>9|14<br>18|ns| |tr|Rise Time||Q1<br>Q2||3<br>10|10<br>20|ns| |td(off)|Turn-Off Delay Time||Q1<br>Q2||19<br>33|35<br>53|ns| |tf|Fall Time||Q1<br>Q2||3<br>16|10<br>29|ns| |Qg(TOT)|Total Gate Charge|Q1<br>VGS= 10V, VDD= 15V, ID= 8.6A<br>Q2<br>VGS= -10V, VDD= -15V, ID= -7.3A|Q1<br>Q2||17<br>33|24<br>46|nC| |Qgs|Gate to Source Charge||Q1<br>Q2||2.7<br>6.1||nC| |Qgd|Gate to Drain “Miller” Charge||Q1<br>Q2||3.4<br>8.5||nC| www.fairchildsemi.com ©2011 Fairchild Semiconductor Corporation FDS8858CZ Rev.C **2** **==> picture [471 x 276] intentionally omitted <==** **----- Start of picture text -----**<br> Electrical Characteristics TJ = 25°C unless otherwise noted<br>Symbol Parameter Test Conditions Type Min Typ Max Units<br>Drain-Source Diode Characteristics<br>Q1 0.8 1.2<br>VSD Source to Drain Diode Forward Voltage V [V][GS ] GS = 0V, I [= 0V, I] S [S ] = -7.3A [= 8.6A (Note 2)] (Note 2) Q2 0.9 -1.2 V<br>Q1 Q1 25 38<br>trr Reverse Recovery Time IF = 8.6A, di/dt = 100A/s Q2 28 42 ns<br>Q2 Q1 19 29<br>Qrr Reverse Recovery Charge IF = -7.3A, di/dt = 100A/s Q2 22 33 nC<br>Notes:<br>1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins.<br> RθJC is guaranteed by design while RθCA is determined by the user’s board design.<br>a) 78°C/W when b) 125°C/W when c) 135°C/W when<br> mounted on a 0.5 in [2] mounted on a 0.02 in [2] mounted on a<br> pad of 2 oz copper pad of 2 oz copper minimun pad<br>Scale 1 : 1 on letter size paper<br>**----- End of picture text -----**<br> **==> picture [338 x 20] intentionally omitted <==** **----- Start of picture text -----**<br> 2. Pulse Test: Pulse Width < 300μs, Duty cycle < 2.0%.<br>3. Starting TJ = 25°C, N-ch: L = 1mH, IAS = 10A, VDD = 27V, VGS = 10V; P-ch: L = 1mH, IAS = -4.7A, VDD = -27V, VGS = -10V.<br>**----- End of picture text -----**<br> **==> picture [72 x 7] intentionally omitted <==** **----- Start of picture text -----**<br> www.fairchildsemi.com<br>**----- End of picture text -----**<br> ©2011 Fairchild Semiconductor Corporation FDS8858CZ Rev.C **3** ## **Typical Characteristics (Q1 N-Channel)** TJ = 25°C unless otherwise noted **==> picture [469 x 576] intentionally omitted <==** **----- Start of picture text -----**<br> 20 3.0<br>VGS = 10V PULSE DURATION = 80DUTY CYCLE = 0.5%MAX μ s VGS = 3.0V PULSE DURATION = 80DUTY CYCLE = 0.5%MAX μ s<br>16 V GS = 4.5V 2.5<br>VGS = 3.5V<br>12 2.0<br>VGS = 3.0V VGS = 3.5V<br>8 1.5<br>VGS = 4.5V<br>4 1.0<br>VGS = 10V<br>0 0.5<br>0 1 2 3 4 0 4 8 12 16 20<br>VDS, DRAIN TO SOURCE VOLTAGE (V) ID, DRAIN CURRENT(A)<br>Figure 1. On- Region Characteristics Figure 2. Normalized On-Resistance<br>vs Drain Current and Gate Voltage<br>1.6 35<br> ID = 8.6A ID = 8.6A PULSE DURATION = 80 μ s<br>VGS = 10V DUTY CYCLE = 0.5%MAX<br>1.4 30<br>1.2 25<br>TJ = 125 [o] C<br>1.0 20<br>TJ = 25 [o] C<br>0.8 15<br>0.6 10<br>-75 -50 -25 0 25 50 75 100 125 150 2 4 6 8 10<br>TJ, JUNCTION TEMPERATURE ( [o] C) VGS, GATE TO SOURCE VOLTAGE (V)<br>Figure 3. Normalized On - Resistance Figure 4. On-Resistance vs Gate to<br>vs Junction Temperature Source Voltage<br>20 20<br>PULSE DURATION = 80 μ s 10 VGS = 0V<br>DUTY CYCLE = 0.5%MAX<br>16<br>VDS = 5V 1<br>12<br>T J = 150 [o] C T J = 25 [o] C<br>TJ = 25 [o] C 0.1<br>8<br>TJ = 150 [o] C 0.01<br>4 TJ = -55 [o] C<br>TJ = -55 [o] C<br>0 0.001<br>0 1 2 3 4 0.0 0.2 0.4 0.6 0.8 1.0 1.2<br>VGS, GATE TO SOURCE VOLTAGE (V) VSD, BODY DIODE FORWARD VOLTAGE (V)<br>Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode<br>Forward Voltage vs Source Current<br>NORMALIZED<br>, DRAIN CURRENT (A)<br>ID<br>DRAIN TO SOURCE ON-RESISTANCE<br>)<br>Ω<br>m<br>(<br>NORMALIZED , DRAIN TO<br>rDS(on)<br>SOURCE ON-RESISTANCE<br> DRAIN TO SOURCE ON-RESISTANCE<br>, DRAIN CURRENT (A)<br>ID<br> REVERSE DRAIN CURRENT (A)IS,<br>**----- End of picture text -----**<br> www.fairchildsemi.com ©2011 Fairchild Semiconductor Corporation FDS8858CZ Rev.C **4** **Typical Characteristics (Q1 N-Channel)** TJ = 25°C unless otherwise noted **==> picture [465 x 575] intentionally omitted <==** **----- Start of picture text -----**<br> 10 3000<br>ID = 8.6A<br>8 Ciss<br>1000<br>VDD = 10V VDD = 15V<br>6<br>C oss<br>VDD = 20V<br>4<br>Crss<br>2 100 f = 1MHz<br>VGS = 0V<br>0 50<br>0 4 8 12 16 20 0.1 1 10 30<br>Qg, GATE CHARGE(nC) VDS, DRAIN TO SOURCE VOLTAGE (V)<br>Figure 7. Gate Charge Characteristics Figure 8. Capacitance vs Drain<br>to Source Voltage<br>20 10-3<br>VDS = 0V<br>10 -4<br>10<br>TJ = 125 [o] C<br>TJ = 25 [o] C 10-5<br>TJ = 125 [o] C<br>T J = 25 [o] C<br>10-6<br>1 10-7<br>0.01 0.1 1 10 100 0 5 10 15 20 25 30<br>tAV, TIME IN AVALANCHE(ms) VGS, GATE TO SOURCE VOLTAGE(V)<br>Figure 9. Unclamped Inductive Figure 10. Gate Leakage Current vs Gate to<br>Switching Capability Source Voltage<br>8<br>50<br>10<br>6<br>VGS = 10V 1ms<br>4 1 10ms<br>THIS AREA IS<br>LIMITED BY r 100ms<br>VGS = 4.5V DS(on)<br>SINGLE PULSE<br>2 0.1 TJ = MAX RATED 1s<br>10s<br>R θ JA = 135 [o] C/W DC<br>R θ JA = 78 [o] C/W T A = 25 [o] C<br>0 0.01<br>25 50 75 100 125 150 0.1 1 10 80<br>TA, AMBIENT TEMPERATURE ( [o] C) VDS, DRAIN to SOURCE VOLTAGE (V)<br>Figure 11. Maximum Continuous Drain Figure 12. Forward Bias Safe<br>Current vs Ambient Temperature Operating Area<br>CAPACITANCE (pF)<br>GATE TO SOURCE VOLTAGE(V)<br>,<br>GS<br>V<br>, AVALANCHE CURRENT(A) GATE LEAKAGE CURRENT(A),<br>IAS Ig<br>DRAIN CURRENT (A), , DRAIN CURRENT (A)<br>ID ID<br>**----- End of picture text -----**<br> www.fairchildsemi.com ©2011 Fairchild Semiconductor Corporation FDS8858CZ Rev.C **5** **==> picture [469 x 404] intentionally omitted <==** **----- Start of picture text -----**<br> Typical Characteristics (Q1 N-Channel) TJ = 25°C unless otherwise noted<br>300<br>V GS = 10V FOR TEMPERATURES<br>100 ABOVE 25 [o] C DERATE PEAK<br>CURRENT AS FOLLOWS:<br>150 – T<br>I = I 25 ------------------------ 125 A<br>10 TA = 25 [o] C<br>SINGLE PULSE<br>1 R θ JA = 135 [o] C/W<br>0.5<br>10-3 10-2 10-1 100 101 102 103<br>t, PULSE WIDTH (s)<br>Figure 13. Single Pulse Maximum Power Dissipation<br>2<br>DUTY CYCLE-DESCENDING ORDER<br>1<br>D = 0.5<br> 0.2<br> 0.1<br> 0.05<br> 0.02<br>0.1 0.01 PDM<br>t 1<br>t 2<br>SINGLE PULSE NOTES:<br>0.01 R θ JA = 135 [o] C/W DUTY FACTOR: D = tPEAK TJ = PDM x Z θJC 1 x R/t2 θJA + TA<br>0.0003<br>10-3 10-2 10-1 100 101 102 103<br>t, RECTANGULAR PULSE DURATION (s)<br>Figure 14. Transient Thermal Response Curve<br>, PEAK TRANSIENT POWER (W)<br>(PK)<br>P<br>IMPEDANCE, ZJA θ<br>NORMALIZED THERMAL<br>**----- End of picture text -----**<br> **==> picture [137 x 14] intentionally omitted <==** **----- Start of picture text -----**<br> ©2011 Fairchild Semiconductor Corporation<br>FDS8858CZ Rev.C<br>**----- End of picture text -----**<br> **==> picture [5 x 7] intentionally omitted <==** **----- Start of picture text -----**<br> 6<br>**----- End of picture text -----**<br> **==> picture [72 x 7] intentionally omitted <==** **----- Start of picture text -----**<br> www.fairchildsemi.com<br>**----- End of picture text -----**<br> **Typical Characteristics (Q2 P-Channel)** TJ = 25°C unless otherwise noted **==> picture [468 x 568] intentionally omitted <==** **----- Start of picture text -----**<br> 20 4.0<br>PULSE DURATION = 80 μ s PULSE DURATION = 80 μ s<br>VGS = -10V DUTY CYCLE = 0.5%MAX 3.5 DUTY CYCLE = 0.5%MAX<br>16 VGS = -5V 3.0 VGS = -3.5V<br>VGS = -4.5V<br>12<br>VGS = -4V 2.5<br>8 VGS = -3.5V 2.0 VGS = -4V V GS = -4.5V<br>1.5<br>4 VGS = -5V<br>VGS = -3V 1.0<br>VGS = -10V<br>0 0.5<br>0 1 2 3 4 0 4 8 12 16 20<br>-VDS, DRAIN TO SOURCE VOLTAGE (V) -ID, DRAIN CURRENT(A)<br>Figure 15. On- Region Characteristics Figure 16. Normalized on-Resistance vs Drain<br>Current and Gate Voltage<br>1.6 60<br> ID = -7.3A ID = -7.3A PULSE DURATION = 80 μ s<br>VGS = -10V DUTY CYCLE = 0.5%MAX<br>1.4 50<br>1.2 40<br>1.0 30 TJ = 125 [o] C<br>0.8 20<br>TJ = 25 [o] C<br>0.6 10<br>-75 -50 -25 0 25 50 75 100 125 150 2 4 6 8 10<br>TJ, JUNCTION TEMPERATURE ( [o] C) -VGS, GATE TO SOURCE VOLTAGE (V)<br>Figure 17. Normalized On- Resistance Figure 18. On-Resistance vs Gate to<br>vs Junction Temperature Source Voltage<br>20 30<br>PULSE DURATION = 80 μ s 10 VGS = 0V<br>DUTY CYCLE = 0.5%MAX<br>16<br>1<br>VDS = -5V<br>12<br>0.1 TJ = 150 [o] C TJ = 25 [o] C<br>8<br>0.01<br>TJ = 25 [o] C TJ =-55 [o] C TJ = -55 [o] C<br>4 0.001<br>TJ = 125 [o] C<br>0 0.0001<br>0 1 2 3 4 5 0.0 0.2 0.4 0.6 0.8 1.0 1.2<br>-VGS, GATE TO SOURCE VOLTAGE (V) -VSD, BODY DIODE FORWARD VOLTAGE (V)<br>NORMALIZED<br>, DRAIN CURRENT (A)<br>ID-<br>DRAIN TO SOURCE ON-RESISTANCE<br>)<br>Ω<br>m<br>(<br>NORMALIZED , DRAIN TO<br>rDS(on)<br>SOURCE ON-RESISTANCE<br> DRAIN TO SOURCE ON-RESISTANCE<br>, DRAIN CURRENT (A)<br>I-D<br>, REVERSE DRAIN CURRENT (A)<br>S<br>-I<br>**----- End of picture text -----**<br> **Figure 19. Transfer Characteristics** **Figure 20. Source to Drain Diode Forward Voltage vs Source Current** www.fairchildsemi.com ©2011 Fairchild Semiconductor Corporation FDS8858CZ Rev.C **7** ## **Typical Characteristics(Q2 P-Channel)** TJ = 25[o] C unless otherwise noted **==> picture [465 x 578] intentionally omitted <==** **----- Start of picture text -----**<br> 10 4000<br>ID = -7.3A VDD = -10V Ciss<br>8<br>VDD = -15V<br>6 1000<br>VDD = -20V Coss<br>4<br>Crss<br>2<br>f = 1MHz<br>VGS = 0V<br>0 100<br>0 7 14 21 28 35 0.1 1 10 30<br>-Qg, GATE CHARGE(nC) -VDS, DRAIN TO SOURCE VOLTAGE (V)<br>Figure 21. Gate Charge Characteristics Figure 22. Capacitance vs Drain<br>to Source Voltage<br>20 10-3<br>VDS = 0V<br>10-4<br>10<br>10-5<br>T J = 25 [o] C TJ = 125 [o] C<br>TJ = 125 [o] C 10-6<br>10-7<br>TJ = 25 [o] C<br>1 10-8<br>0.01 0.1 1 10 30 0 5 10 15 20 25 30<br>tAV, TIME IN AVALANCHE(ms) -VGS, GATE TO SOURCE VOLTAGE(V)<br>Figure 23. Unclamped Inductive Figure 24. Gate Leakage Current vs Gate to<br>Switching Capability Source Voltage<br>8<br>60<br>6 10<br>VGS = -10V<br>1ms<br>4 1 10ms<br>VGS = -4.5V<br>THIS AREA IS 100ms<br>LIMITED BY r<br>2 DS(on) SINGLE PULSE<br>0.1 TJ = MAX RATED 1s<br>10s<br>R θ JA = 78 [o] C/W R θ JA = 135 [o] C/W DC<br>0 T A = 25 [o] C<br>25 50 75 100 125 150 0.01<br>0.1 1 10 80<br>TA, AMBIENT TEMPERATURE ( [o] C)<br>-VDS, DRAIN to SOURCE VOLTAGE (V)<br>Figure 25. Maximum Continuous Drain Figure 26. Forward Bias Safe<br>Current vs Ambient Temperature Operating Area<br>CAPACITANCE (pF)<br>, GATE TO SOURCE VOLTAGE(V)<br>GS<br>-V<br>, AVALANCHE CURRENT(A) GATE LEAKAGE CURRENT(A)<br>,<br>IAS- -Ig<br>, DRAIN CURRENT (A)<br>I - D , DRAIN CURRENT (A)<br>D<br>-I<br>**----- End of picture text -----**<br> www.fairchildsemi.com ©2011 Fairchild Semiconductor Corporation FDS8858CZ Rev.C **8** **==> picture [468 x 413] intentionally omitted <==** **----- Start of picture text -----**<br> Typical Characteristics(Q2 P-Channel) TJ = 25 [o] C unless otherwise noted<br>300<br>V GS = 10V FOR TEMPERATURES<br>100 ABOVE 25 [o] C DERATE PEAK<br>CURRENT AS FOLLOWS:<br>150 – T<br>I = I 25 ------------------------ 125 A<br>10 TA = 25 [o] C<br>SINGLE PULSE<br>1 R θ JA = 135 [o] C/W<br>0.5<br>10-3 10-2 10-1 100 101 102 103<br>t, PULSE WIDTH (s)<br>Figure 27. Single Pulse Maximum Power Dissipation<br>2<br>DUTY CYCLE-DESCENDING ORDER<br>1<br>D = 0.5<br> 0.2<br> 0.1<br> 0.05<br> 0.02<br>0.1 0.01 PDM<br>t1<br>t2<br>0.01 SINGLE PULSE NOTES:<br>R θ JA = 135 [o] C/W DPEAK TUTY FAJ = PCTODMR: D = x Z θJC t1 x R/t2 θJA + TA<br>0.0003<br>10-3 10-2 10-1 100 101 102 103<br>t, RECTANGULAR PULSE DURATION (s)<br>Figure 28. Transient Thermal Response Curve<br>, PEAK TRANSIENT POWER (W)<br>(PK)<br>P<br>IMPEDANCE, ZJA θ<br>NORMALIZED THERMAL<br>**----- End of picture text -----**<br> **==> picture [137 x 14] intentionally omitted <==** **----- Start of picture text -----**<br> ©2011 Fairchild Semiconductor Corporation<br>FDS8858CZ Rev.C<br>**----- End of picture text -----**<br> **==> picture [5 x 7] intentionally omitted <==** **----- Start of picture text -----**<br> 9<br>**----- End of picture text -----**<br> **==> picture [72 x 7] intentionally omitted <==** **----- Start of picture text -----**<br> www.fairchildsemi.com<br>**----- End of picture text -----**<br> ## **TRADEMARKS** The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 2Cool™ FPS™ PDP SPM™ The Power Franchise[®] AccuPower™ F-PFS™ Power-SPM™ D ® Auto-SPM™ FRFET[®] PowerTrench[®] wer AX-CAP™* Global Power Resource[SM] PowerXS™ P.. 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