FDS6930B

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March 2010<br>**----- End of picture text -----**<br>


## **FDS6930B** 

## **Dual N-Channel Logic Level PowerTrench[®] MOSFET** 

## **Features** 

■ 5.5 A, 30 V. RDS(ON) = 38 mΩ @ VGS = 10 V RDS(ON) = 50 mΩ @ VGS = 4.5 V ■ Fast switching speed ■ Low gate charge ■ High performance trench technology for extremely low R DS(ON) ■ High power and current handling capability 

## **General Description** 

These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required. 

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D2<br>D2 5 4<br>D1 c H<br>D1 6 3<br>7 2<br>G2<br>SO-8 G1  [S2] 8 1<br>¢: S1 f a )<br>Pin 1<br>**----- End of picture text -----**<br>


## **Absolute Maximum Ratings** TA = 25°C unless otherwise noted 

|**Absolute Maximum Ratings**|**Absolute Maximum Ratings**TA = 25°C unless otherwise notedA = 25°C unless otherwise noted= 25°C unless otherwise noted|||
|---|---|---|---|
|**Symbol**|**Parameter**|**Ratings**|**Units**|
|VDSS|Drain-Source Voltage|30|V|
|VGSS|Gate-Source Voltage|±20|V|
|ID|Drain Current<br>– Continuous<br>(Note 1a)<br>– Pulsed|5.5|A|
|||20||
|PD|Power Dissipation for Dual Operation<br>(Note 1)|2|W|
||Power Dissipation for Single Operation<br>(Note 1a)<br>(Note 1b)<br>(Note 1c)|1.6||
|||1||
|||0.9||
|TJ, TSTG|Operating and Storage Junction Temperature Range|–55 to 150|°C|
|**Thermal Characteristics**||||
|R<br>θJA|Thermal Resistance, Junction-to-Ambient<br>(Note 1a)|78|°C/W|
|R<br>θJC|Thermal Resistance, Junction-to-Case<br>(Note 1)|40|°C/W|



**1** 

©2010 Fairchild Semiconductor Corporation FDS6930B Rev. A1 

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## **Electrical Characteristics** TA = 25°C unless otherwise noted 

|**Electri**|**cal Characteristics**TA= 25°C unle|ss otherwise noted|||||
|---|---|---|---|---|---|---|
|**Symbo**|**l**<br>**Parameter**|**Test Conditions**|**Min**|**Typ**|**Max**|**Units**|
|**Off Characteristics**|||||||
|BVDSS|Drain–Source Breakdown Voltage<br>V|GS= 0 V, ID= 250<br>µA|30|||V|
|∆BVDSS<br>∆TJ|Breakdown Voltage Temperature<br>Coeffcient<br>ID|= 250<br>µA, Referenced to 25<br>°C||26||mV/<br>°C|
|IDSS|Zero Gate Voltage Drain Current<br>V<br>V|DS= 24 V, VGS= 0 V<br>DS= 24 V, VGS= 0 V, TJ= 55<br>°C|||1<br>10|µA|
|IGSS|Gate–Source Leakage<br>V|GS=<br>±20 V, VDS= 0 V|||±100|nA|
|**On Characteristics** (Note 2)|||||||
|VGS(th)|Gate Threshold Voltage<br>V|DS= VGS, ID= 250<br>µA|1|1.9|3|V|
|∆VGS(th)<br>∆TJ|Gate Threshold Voltage<br>Temperature Coeffcient<br>ID|= 250<br>µA, Referenced to 25<br>°C||–4.6||mV/<br>°C|
|RDS(on)|Static Drain–Source<br>On–Resistance<br>V<br>V<br>V|GS= 10 V, ID= 5.5 A<br>GS= 4.5 V, ID= 4.8 A<br>GS= 10 V, ID= 5.5 A, TJ= 125<br>°C||31<br>40<br>45|38<br>50<br>62|m<br>Ω|
|ID(on)|On–State Drain Current<br>V|GS= 10 V, VDS= 5 V|20|||A|
|gFS|Forward Transconductance<br>V|DS= 5 V, ID= 5.5 A||19||S|
|**Dynamic Characteristics**|||||||
|Ciss|Input Capacitance<br>V<br>f =<br>Output Capacitance<br>Reverse Transfer Capacitance|DS= 15 V, VGS= 0 V,<br>1.0 MHz||310|412|pF|
|Coss||||90|120|pF|
|Crss||||40|60|pF|
|RG|Gate Resistance<br>V|GS= 15 mV, f = 1.0 MHz||1.9||Ω|
|**Switching Characteristics** (Note 2)|||||||
|td(on)|Turn–On Delay Time<br>V<br>V<br>Turn–On Rise Time<br>Turn–Off Delay Time<br>Turn–Off Fall Time|DD= 15 V, ID= 1 A,<br>GS= 10 V, RGEN= 6<br>Ω||6|12|ns|
|tr||||6|12|ns|
|td(off)||||16|28|ns|
|tf||||2|4|ns|
|Qg|Total Gate Charge<br>V<br>V<br>Gate–Source Charge<br>Gate–Drain Charge|DS= 15 V, ID= 5.5 A,<br>GS= 5 V||2.7|3.8|nC|
|Qgs||||1.0||nC|
|Qgd||||0.7||nC|
|**Drain–Source Diode Characteristics and Maximum Ratings**|||||||
|IS|Maximum Continuous Drain–Source Diode Forward Current||||1.3|A|
|VSD|Drain–Source Diode Forward Voltage<br>V|GS= 0 V, IS= 1.3 A(Note 2)||0.8|1.2|V|
|trr|Diode Reverse Recovery Time(note3)<br>IF <br>Diode Reverse Recovery Charge|= 5.5 A, diF/dt= 100 A/µs||16|32|nS|
|Qrr||||6||nC|



## **Notes:** 

1. RθJA[is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins.] RθJC[is guaranteed by design while R] θCA[is determined by the user's board design.] 

a) 78°C/W when mounted b) on a 0.5 in[2] pad of 2 oz copper 

b) 125°C/W when c) 135°C/W when mounted on a 0.02 in[2] mounted on a pad of 2 oz copper minimum pad. 

Scale 1 : 1 on letter size paper 

2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0% 

3. Trr parameter will not be subjected to 100% production testing. 

**2** 

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FDS6930B Rev. A1 

## **Typical Characteristics** 

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20 2<br>VGS = 10V 4.0V<br>1.8<br>16<br>6.0V 4.5V 3.5V VGS = 3.5V<br>1.6<br>12<br>1.4  4 .0 V<br>8  4.5V<br>1.2 5.0V<br>3.0V  6.0V<br>4  10.0V<br>1<br>0 0.8<br>0 0.5 1 1.5 2 0 4 8 12 16 20<br>VDS, DRAIN TO SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A)<br>Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with<br>Drain Current and Gate Voltage.<br>1.6 0.12<br>VGSID = 5.5A = 10.0V ID = 2.75A<br>1.4 0.1<br>1.2 0.08<br>TA = 125°C<br>1 0.06<br>0.8 0.04<br>TA = 25°C<br>0.6 0.02<br>-50 -25 0 25 50 75 100 125 150 2 4 6 8 10<br>TJ, JUNCTION TEMPERATURE ( [o] C) VGS, GATE TO SOURCE VOLTAGE (V)<br>Figure 3. On-Resistance Variation with Figure 4. On-Resistance Variation with<br>Temperature. Gate-to-Source Voltage.<br>20 100<br>VDS = 5V VGS = 0V<br>10<br>16<br>1 TA = 125°C<br>12<br>25°C<br>0.1<br>8 TA = 125° C -55°C 0.01 -55°C<br>4<br>0.001<br>25°C<br>0 0.0001<br>1 2 3 4 5 0 0.2 0.4 0.6 0.8 1 1.2<br>VGS, GATE TO SOURCE VOLTAGE (V) VSD, BODY DIODE FORWARD VOLTAGE (V)<br>, NORMALIZED<br>, DRAIN CURRENT (A)ID RDS(ON)<br>DRAIN-SOURCE ON-RESISTANCE<br>, NORMALIZED<br>DS(ON) , ON-RESISTANCE (OHM)<br>R DS(ON)<br>R<br> DRAIN-SOURCE ON-RESISTANCE<br>, DRAIN CURRENT (A)ID<br>, REVERSE DRAIN CURRENT (A)IS<br>**----- End of picture text -----**<br>


**Figure 5. Transfer Characteristics.** 

**Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature.** 

**3** 

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FDS6930B Rev. A1 

## **Typical Characteristics** 

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10 500<br>f = 1 MHz<br>ID = 5.5A VGS = 0 V<br>8 400<br>VDS = 5V 15V<br>6 300<br>Ciss<br>10V<br>4 200<br>Coss<br>2 100<br>Crss<br>0 0<br>0 1 2 3 4 5 6 0 5 10 15 20<br>Qg, GATE CHARGE (nC) VDS, DRAIN TO SOURCE VOLTAGE (V)<br>Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics.<br>100 50<br>SINGLE PULSE<br>10 RDS(ON) LIMIT 1ms 100µs 40 RθJAT = 135A = 25°°CC/W<br>10ms<br>100ms 30<br>1s<br>1 10s<br>DC 20<br>VGS = 10.0V<br>0.1 SINGLE PULSE<br>R [θ] JA = 135°C/W 10<br>TA = 25°C<br>0.01 0<br>0.01 0.1 1 10 100 0.001 0.01 0.1 1 10 100<br>VDS, DRAIN-SOURCE VOLTAGE (V) t1, TIME (sec)<br>CAPACITANCE (pF)<br>, GATE-SOURCE VOLTAGE (V)<br>GS<br>V<br>, DRAIN CURRENT (A)ID<br>P(pk), PEAK TRANSIENT POWER (W)<br>**----- End of picture text -----**<br>


**Figure 9. Maximum Safe Operating Area.** 

**Figure 10. Single Pulse Maximum Power Dissipation.** 

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1<br>D = 0.5<br>RθJA(t) = r(t) * RθJA<br>0.2 RθJA = 135°C/W<br>0.1 0.1<br>0.05 P(pk)<br>0.02 t1<br>0.01 t2<br>0.01<br>TJ - TA = P * RθJA(t)<br>Duty Cycle, D = t1 / t2<br>SINGLE PULSE<br>0.001<br>0.0001 0.001 0.01 0.1 1 10 100 1000<br>t1, TIME (sec)<br>THERMAL RESISTANCE<br>r(t), NORMALIZED EFFECTIVE TRANSIENT<br>**----- End of picture text -----**<br>


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Figure 11. Transient Thermal Response Curve.<br>                                                          Thermal characterization performed using the conditions described in Note 1c.<br>                                                          Transient thermal response will change depending on the circuit board design.<br>**----- End of picture text -----**<br>


**4** 

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FDS6930B Rev. A1 

## **TRADEMARKS** 

The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 

> AccuPowerAuto-SPM ™™ F-PFSFRFET ™[®] Power-SPMPowerTrench ™[®] S GENERALSYSTEM ®* Build it Now ™ Global Power ResourceSM PowerXS™ The Power Franchise[®] CorePLUS ™ Green FPS Programmable Active Droop CorePOWER ™ Green FPS ™™ e-Series ™ QFET[®] ™ pfranchiseWwer _CROSSVOLT_ ™ G _max_ ™ QS ™ TinyBoost ™ 

> CTL ™ GTO ™ Quiet Series rea TinyBuck ™ Current Transfer Logic ™ IntelliMAX ™ RapidConfigure TinyCalc DEUXPEED[®] ISOPLANAR ™™ TinyLogic[®] FairchildDual Cool™ EcoSPARKEfficientMaxESBC ~~f~~ ® ™[®][®] ™ MegaBuckMICROCOUPLERMicroFETMicroPakMicroPak2MillerDrive ™™™™ ™ Saving our world, 1mW/W/kW at a time™ SignalWiseSmartMaxSMART STARTSPMSTEALTH[®] ™M™ TINYOPTOTinyPowerTinyPWMTinyWireTriFault DetectTRUECURRENT ™ ™ ™ * Fairchild Semiconductor[®] MotionMax ™ SuperFET ™ uw SerDes ™ FACT Quiet Series " Motion-SPM SuperSOT 3 FACT[®] OptoHiT™ " SuperSOT ‘™ -6 WZDes FAST[®] OPTOLOGIC[®] SuperSOT ™ -8 UHC[®] FastvCoreFETBench ™1M OPTOPLANAR®[®] SupreMOSSyncFET q™ Ultra FRFETUniFET ™ ™ FPSFlashWriter ™[®][*] PDP SPM™ Sync-Lock™ VCXVisualMax ™ ™ XS™ 

* Trademarks of System General Corporation, used under license by Fairchild Semiconductor. 

## **DISCLAIMER** 

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. 

## **LIFE SUPPORT POLICY** 

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. 

As used herein: 

1. Life support devices or systems are devices or systems which, (a) are 2. A critical component in any component of a life support, device, or intended for surgical implant into the body or (b) support or sustain life, system whose failure to perform can be reasonably expected to and (c) whose failure to perform when properly used in accordance cause the failure of the life support device or system, or to affect its with instructions for use provided in the labeling, can be reasonably safety or effectiveness. expected to result in a significant injury of the user. 

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Fairchild Semiconductor Corporation's Anti-Counterfeiting Policy. Fairchild's Anti-Counterfeiting Policy is also stated on our external website, www.fairchildsemi.com, under Sales Support. 

Counterfeiting of semiconductor parts is a growing problem in the industry. All manufacturers of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed applications, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild's quality standards for handling and storage and provide access to Fairchild's full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address any warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. 

## **PRODUCT STATUS DEFINITIONS** 

## **Definition of Terms** 

|**Definition of Terms**|||
|---|---|---|
|**Datasheet Identification**|**Product Status**|**Definition**|
|Advance Information|Formative / In Design|Datasheet contains the design specifications for product development. Specifications may change in<br>any manner without notice.|
|Preliminary|First Production|Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild<br>Semiconductor reserves the right to make changes at anytime without notice to improve design.|
|No Identification Needed|Full Production|Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes<br>at anytime without notice to improve the design.|
|Obsolete|Not In Production|Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor.<br>The datasheet is for reference information only.|



Rev. I48