FDS6898AZ

## **Is Now Part of** 

**To learn more about ON Semiconductor, please visit our website at www.onsemi.com** 

ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 

**==> picture [62 x 9] intentionally omitted <==**

**----- Start of picture text -----**<br>
October 2001<br>**----- End of picture text -----**<br>


## **FDS6898AZ** 

## **Dual N-Channel Logic Level PWM Optimized PowerTrench[] MOSFET** 

## **General Description** 

These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. 

## **Features** 

• 9.4 A,  20 V RDS(ON) = 14 mΩ @ VGS = 4.5 V RDS(ON) = 18 mΩ @ VGS = 2.5 V 

- Low gate charge  (16 nC typical) 

- ESD protection diode (note 3) 

These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required. 

- High performance trench technology for extremely low RDS(ON) 

- High power and current handling capability 

**==> picture [434 x 371] intentionally omitted <==**

**----- Start of picture text -----**<br>
DD1<br>DD1 5 4<br>DD2<br>DD2 C 6 H Q1 3<br>SO-8 G1 7 2<br>S1 G<br>G2 S Q2<br>Pin 1 ¢ SO-8 S2S S 8 fag 1<br>Absolute Maximum Ratings TA=25 [o] C unless otherwise noted<br>Symbol Parameter Ratings Units<br>a VDSS Drain-Source Voltage a 20 V<br>VGSS Gate-Source Voltage ± 12 V<br>ID Drain Current – Continuous (Note 1a) 9.4 A<br>– Pulsed 38<br>PD Power Dissipation for Dual Operation 2 W<br>Power Dissipation for Single Operation (Note 1a) 1.6<br>(Note 1b) 1<br>(Note 1c) 0.9<br>TJ, TSTG Operating and Storage Junction Temperature Range –55 to +150 °C<br>Thermal Characteristics<br>RθJA Thermal Resistance, Junction-to-Ambient  (Note 1a) 78 °C/W<br>ee RθJC Thermal Resistance, Junction-to-Case (Note 1) 40 °C/W<br>Package Marking and Ordering Information<br>Device Marking Device Reel Size Tape width Quantity<br>FDS6898AZ FDS6898AZ 13’’ 12mm 2500 units<br>ee<br>2001 Fairchild Semiconductor Corporation2001 Fairchild Semiconductor Corporation FDS6898AZ Rev C  (W)<br>**----- End of picture text -----**<br>


2001 Fairchild Semiconductor Corporation2001 Fairchild Semiconductor Corporation 

|**Electrical Characteristics**<br>TA= 25°C unless otherwise noted|**Electrical Characteristics**<br>TA= 25°C unless otherwise noted|**Electrical Characteristics**<br>TA= 25°C unless otherwise noted|||||
|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Test Conditions**|**Min**|**Typ**|**Max**|**Units**|
|**Off Characteristics**|||||||
|BVDSS|Drain–Source Breakdown Voltage|VGS= 0 V,       ID= 250µA|20|||V|
|∆BVDSS<br>∆TJ|Breakdown Voltage Temperature<br>Coefficient|ID= 250µA, Referenced to 25°C||21||mV/°C|
|IDSS|Zero Gate Voltage Drain Current|VDS= 16 V,     VGS= 0 V|||1|µA|
|IGSSF|Gate–BodyLeakage, Forward|VGS= 12 V,<br>VDS= 0 V|||10|µA|
|IGSSR|Gate–BodyLeakage, Reverse|VGS= –12 V, VDS= 0 V|||–10|µA|
|**On Characteristics**<br>**(Note 2)**|||||||
|VGS(th)|Gate Threshold Voltage|VDS= VGS,        ID= 250µA|0.5|1|1.5|V|
|∆VGS(th)<br>∆TJ|Gate Threshold Voltage<br>Temperature Coefficient|ID= 250µA, Referenced to 25°C||–3.5||mV/°C|
|RDS(on)|Static Drain–Source<br>On–Resistance|VGS= 4.5 V, ID= 9.4 A<br>VGS= 2.5 V, ID= 8.3 A<br>VGS= 4.5V,ID=9.4 A,TJ= 125°C||10<br>13<br>14|14<br>18<br>21|mΩ|
|ID(on)|On–State Drain Current|VGS= 4.5V,<br>VDS= 5 V|19|||A|
|gFS|Forward Transconductance|VDS= 5 V,<br>ID= 9.4 A||47||S|
|**Dynamic Characteristics**|||||||
|Ciss|Input Capacitance|VDS= 10 V,<br>VGS= 0 V,<br>f = 1.0 MHz||1821||pF|
|Coss|Output Capacitance|||440||pF|
|Crss|Reverse Transfer Capacitance|||208||pF|
|**Switching Characteristics**<br>**(Note 2)**|||||||
|td(on)|Turn–On DelayTime|VDD= 10 V,<br>ID= 1 A,<br>VGS= 4.5 V,<br>RGEN= 6Ω||10|20|ns|
|tr|Turn–On Rise Time|||15|27|ns|
|td(off)|Turn–Off DelayTime|||34|55|ns|
|tf|Turn–Off Fall Time|||16|29|ns|
|Qg|Total Gate Charge|VDS= 10 V,<br>ID= 9.4 A,<br>VGS= 4.5 V||16|23|nC|
|Qgs|Gate–Source Charge|||3||nC|
|Qgd|Gate–Drain Charge|||4||nC|
|**Drain–Source Diode Characteristics and Maximum Ratings**|||||||
|IS|Maximum Continuous Drain–Source Diode Forward Current||||1.3|A|
|VSD|Drain–Source Diode Forward<br>Voltage|VGS= 0 V,<br>IS= 1.3 A<br>(Note 2)||0.7|1.2|V|



**Notes:** 

**1.** RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins.  RθJC is guaranteed by design while RθCA is determined by the user's board design. 

a) 78°C/W when b) 125°C/W when c) 135°C/W when mounted on a mounted on a 0.5in[2] mounted on a 0.02 minimum mounting pad. pad of 2 oz copper in[2] pad of 2 oz copper 

Scale 1 : 1 on letter size paper 

**2.** Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0% 

**3.** The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied 

FDS6898AZ Rev C (W) 

**==> picture [462 x 535] intentionally omitted <==**

**----- Start of picture text -----**<br>
Typical Characteristics<br>40 2.2<br>VGS = 4.5V 3.0V<br>2<br>30 2.5V 1.8 VGS = 2.0V<br>1.6<br>20 2.0V<br>1.4<br>2.5V<br>1.2 3.0V<br>10 4.0V<br>1 4.5V<br>0 0.8<br>0 0.5 1 1.5 2 0 10 20 30 40<br>VDS, DRAIN-SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A)<br>Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with<br>Drain Current and Gate Voltage.<br>1.6 0.038<br>ID = 9.4A<br>VGS = 4.5V ID = 4.7A<br>1.4<br>0.03<br>1.2<br>0.022<br>1 TA = 125 [o] C<br>0.014<br>0.8<br>TA = 25 [o] C<br>0.6 0.006<br>-50 -25 0 25 50 75 100 125 150 1 2 3 4 5<br>TJ, JUNCTION TEMPERATURE (oC) VGS, GATE TO SOURCE VOLTAGE (V)<br>Figure 3. On-Resistance Variation with Figure 4. On-Resistance Variation with<br>Temperature. Gate-to-Source Voltage.<br>40 100<br>VDS = 5V TA = -55 [o] C 12525 [o] C [o] C 10 VGS = 0V<br>30 TA = 125 [o] C<br>1<br>25 [o] C<br>20 0.1<br>-55 [o] C<br>0.01<br>10<br>0.001<br>0 0.0001<br>0.5 1 1.5 2 2.5 0 0.2 0.4 0.6 0.8 1 1.2<br>VGS, GATE TO SOURCE VOLTAGE (V) VSD, BODY DIODE FORWARD VOLTAGE (V)<br>FDS6898AZ<br>, NORMALIZED<br>, DRAIN CURRENT (A)ID RDS(ON)<br>DRAIN-SOURCE ON-RESISTANCE<br>, NORMALIZED<br>DS(ON) , ON-RESISTANCE (OHM)<br>R DS(ON)<br>R<br> DRAIN-SOURCE ON-RESISTANCE<br>, DRAIN CURRENT (A)ID<br>, REVERSE DRAIN CURRENT (A)IS<br>**----- End of picture text -----**<br>


**Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature.** 

FDS6898AZ Rev C (W) 

## **Typical Characteristics** 

**==> picture [415 x 128] intentionally omitted <==**

**----- Start of picture text -----**<br>
10 2500<br>ID = 9.4A VDS = 5V 10V Vf = 1MHzGS = 0 V<br>8 2000 CISS<br>15V<br>6 1500<br>4 1000<br>COSS<br>2 500<br>CRSS<br>0 0<br>0 5 10 15 20 25 30 35 0 5 10 15 20<br>Qg, GATE CHARGE (nC) VDS, DRAIN TO SOURCE VOLTAGE (V)<br>CAPACITANCE (pF)<br>, GATE-SOURCE VOLTAGE (V)<br>GS<br>V<br>**----- End of picture text -----**<br>


**==> picture [423 x 385] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics.<br>100 40<br>SINGLE PULSE<br>100µs RθJA =135°C/W<br>R DS(ON)  LIMIT 1ms TA = 25°C<br>10 30<br>10ms<br>100ms<br>1s<br>1 10s 20<br>DC<br>V GS  = 10V<br>SINGLE PULSE<br>0.1 RθJA = 135 [o] C/W 10<br>T A  = 25 [o] C<br>0.01 0<br>0.01 0.1 1 10 100 0.001 0.01 0.1 1 10 100<br>VDS, DRAIN-SOURCE VOLTAGE (V) t1, TIME (sec)<br>Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum<br>Power Dissipation.<br>1<br>D = 0.5<br>RθJA(t) = r(t) * RθJA<br>0.2 RθJA = 135 °C/W<br>0.1 0.1<br>0.05 P(pk)<br>0.02 t1<br>0.01 0.01 t 2<br>TJ - TA = P * RθJA(t)<br>SINGLE PULSE Duty Cycle, D = t1 / t2<br>0.001<br>0.0001 0.001 0.01 0.1 1 10 100 1000<br>Figure 11. Transient Thermal Response Curve.<br>Thermal characterization performed using the conditions described in Note 1c.<br>Transient thermal response will change depending on the circuit board design.<br>, DRAIN CURRENT (A)ID<br>P(pk), PEAK TRANSIENT POWER (W)<br>r(t), NORMALIZED EFFECTIVE<br>TRANSIENT THERMAL RESISTANCE<br>**----- End of picture text -----**<br>


FDS6898AZ Rev C (W) 

## **TRADEMARKS** 

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. 

**==> picture [433 x 130] intentionally omitted <==**

**----- Start of picture text -----**<br>
||||||||
|---|---|---|---|---|---|---|
|ACEx™|FAST||OPTOLOGIC™|SMART START™|VCX™|
|Bottomless™|FASTr™|OPTOPLANAR™|STAR*POWER™|
|CoolFET™|FRFET™|PACMAN™|Stealth™|
|CROSSVOLT|™|GlobalOptoisolator™|POP™|SuperSOT™-3|
|DenseTrench™|GTO™|Power247™|SuperSOT™-6|
|DOME™|HiSeC™|PowerTrench||SuperSOT™-8|
|EcoSPARK™|ISOPLANAR™|QFET™|SyncFET™|
|E|[2]|CMOS|[TM]|LittleFET™|QS™|TinyLogic™|
|EnSigna|[TM]|MicroFET™|QT Optoelectronics™|TruTranslation™|
|FACT™|MicroPak™|Quiet Series™|UHC™|
|FACT Quiet Series™|MICROWIRE™|SILENT SWITCHER||UltraFET||

**----- End of picture text -----**<br>


STAR*POWER is used under license 

## **DISCLAIMER** 

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. 

## **LIFE SUPPORT POLICY** 

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 

1. Life support devices or systems are devices or 2. A critical component is any component of a life systems which, (a) are intended for surgical implant into support device or system whose failure to perform can the body, or (b) support or sustain life, or (c) whose be reasonably expected to cause the failure of the life failure to perform when properly used in accordance support device or system, or to affect its safety or with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. 

## **PRODUCT STATUS DEFINITIONS** 

## **Definition of Terms** 

**==> picture [433 x 208] intentionally omitted <==**

**----- Start of picture text -----**<br>
Datasheet Identification Product Status Definition<br>Advance Information Formative or This datasheet contains the design specifications for<br>In Design product development. Specifications may change in<br>any manner without notice.<br>Preliminary First Production This datasheet contains preliminary data, and<br>supplementary data will be published at a later date.<br>Fairchild Semiconductor reserves the right to make<br>changes at any time without notice in order to improve<br>design.<br>No Identification Needed Full Production This datasheet contains final specifications. Fairchild<br>Semiconductor reserves the right to make changes at<br>any time without notice in order to improve design.<br>Obsolete Not In Production This datasheet contains specifications on a product<br>that has been discontinued by Fairchild semiconductor.<br>The datasheet is printed for reference information only.<br>**----- End of picture text -----**<br>


Rev. H4 

ON Semiconductor and      are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 

## **PUBLICATION ORDERING INFORMATION** 

**N. American Technical Support** : 800−282−9855 Toll Free **ON Semiconductor Website** : **www.onsemi.com** USA/Canada 

## **LITERATURE FULFILLMENT** : 

Literature Distribution Center for ON Semiconductor 

**Order Literature** : http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative 

19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA **Europe, Middle East and Africa Technical Support: Phone** : 303−675−2175 or 800−344−3860 Toll Free USA/Canada Phone: 421 33 790 2910 **Fax** : 303−675−2176 or 800−344−3867 Toll Free USA/Canada **Japan Customer Focus Center Email** : orderlit@onsemi.com Phone: 81−3−5817−1050 

© Semiconductor Components Industries, LLC 

www.onsemi.com 

**www.onsemi.com** 

**1**