FDS6898A.

## **ON Semiconductor** 

## **Is Now** 

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## **FDS6898A** 

## **Dual N-Channel Logic Level PWM Optimized PowerTrench[] MOSFET General Description Features** 

These N-Channel Logic Level MOSFETs are produced using ON Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. 

These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required. 

• 9.4 A,  20 V RDS(ON) = 14 mΩ @ VGS = 4.5 V RDS(ON) = 18 mΩ @ VGS = 2.5 V 

- Low gate charge  (16 nC typical) 

- High performance trench technology for extremely low RDS(ON) 

- High power and current handling capability 

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DD1<br>DD1<br>DD2<br>DD2<br>SO-8 G1<br>S1 G<br>G2 S<br>S2 S<br>Pin 1 SO-8 S<br>**----- End of picture text -----**<br>


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5 4<br>6 Q1 3<br>7 2<br>Q2<br>8 1<br>**----- End of picture text -----**<br>


|**Absolute Maximum Ratings**TA=25oC unless otherwise noted|**Absolute Maximum Ratings**TA=25oC unless otherwise noted|||
|---|---|---|---|
|**Symbol**<br>**Parameter**|**Ratings**||**Units**|
|VDSS<br>Drain-Source Voltage|20||V|
|VGSS<br>Gate-Source Voltage|±12||V|
|ID<br>Drain Current<br>– Continuous<br>(Note 1a)|9.4||A|
|– Pulsed|38|||
|Power Dissipation for Dual Operation<br>PD|2||W|
|Power Dissipation for Single Operation<br>(Note 1a)<br>1.6<br>(Note 1b)<br>1<br>(Note 1c)<br>0.9<br>TJ, TSTG<br>Operatingand Storage Junction Temperature Range<br>–55 to +150<br>°C<br>~~—~~||||
|**Thermal Characteristics**||||
|RθJA<br>Thermal Resistance, Junction-to-Ambient<br>(Note 1a)<br>RθJC<br>Thermal Resistance, Junction-to-Case<br>(Note 1)<br>**Package Marking and Ordering Information**<br>**Device Marking**<br>**Device**<br>**Reel Size**<br>FDS6898A<br>FDS6898A<br>13’’<br>~~pe~~<br>~~—~~|78<br>40<br>**Tape width**<br>12mm|°C/W<br>°C/W<br>**Quantity**<br>2500 units||



Publication Order Number: FDS6898A/D 

2001 Semiconductor Components Industries, LLC. September-2017, Rev. 3 

|**Electrical Characteristics**<br>TA= 25°C unless otherwise noted|**Electrical Characteristics**<br>TA= 25°C unless otherwise noted|**Electrical Characteristics**<br>TA= 25°C unless otherwise noted|||||
|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Test Conditions**|**Min**|**Typ**|**Max**|**Units**|
|**Off Characteristics**|||||||
|BVDSS|Drain–Source Breakdown Voltage|VGS= 0 V,       ID= 250µA|20|||V|
|∆BVDSS<br>∆TJ|Breakdown Voltage Temperature<br>Coefficient|ID= 250µA, Referenced to 25°C||21||mV/°C|
|IDSS|Zero Gate Voltage Drain Current|VDS= 16 V,     VGS= 0 V|||1|µA|
|IGSSF|Gate–BodyLeakage, Forward|VGS= 12 V,<br>VDS= 0 V|||100|nA|
|IGSSR|Gate–BodyLeakage, Reverse|VGS= –12 V, VDS= 0 V|||–100|nA|
|**On Characteristics**<br>**(Note 2)**|||||||
|VGS(th)|Gate Threshold Voltage|VDS= VGS,        ID= 250µA|0.5|1|1.5|V|
|∆VGS(th)<br>∆TJ|Gate Threshold Voltage<br>Temperature Coefficient|ID= 250µA, Referenced to 25°C||–3.5||mV/°C|
|RDS(on)|Static Drain–Source<br>On–Resistance|VGS= 4.5 V, ID= 9.4 A<br>VGS= 2.5 V, ID= 8.3 A<br>VGS= 4.5V,ID=9.4 A,TJ= 125°C||10<br>13<br>14|14<br>18<br>21|mΩ|
|ID(on)|On–State Drain Current|VGS= 4.5V,<br>VDS= 5 V|19|||A|
|gFS|Forward Transconductance|VDS= 5 V,<br>ID= 9.4 A||47||S|
|**Dynamic Characteristics**|||||||
|Ciss|Input Capacitance|VDS= 10 V,<br>VGS= 0 V,<br>f = 1.0 MHz||1821||pF|
|Coss|Output Capacitance|||440||pF|
|Crss|Reverse Transfer Capacitance|||208||pF|
|**Switching Characteristics**<br>**(Note 2)**|||||||
|td(on)|Turn–On DelayTime|VDD= 10 V,<br>ID= 1 A,<br>VGS= 4.5 V,<br>RGEN= 6Ω||10|20|ns|
|tr|Turn–On Rise Time|||15|27|ns|
|td(off)|Turn–Off DelayTime|||34|55|ns|
|tf|Turn–Off Fall Time|||16|29|ns|
|Qg|Total Gate Charge|VDS= 10 V,<br>ID= 9.4 A,<br>VGS= 4.5 V||16|23|nC|
|Qgs|Gate–Source Charge|||3||nC|
|Qgd|Gate–Drain Charge|||4||nC|
|**Drain–Source Diode Characteristics and Maximum Ratings**|||||||
|IS|Maximum Continuous Drain–Source Diode Forward Current||||1.3|A|
|VSD|Drain–Source Diode Forward<br>Voltage|VGS= 0 V,<br>IS= 1.3 A<br>(Note 2)||0.7|1.2|V|



**Notes:** 

**1.** RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins.  RθJC is guaranteed by design while RθCA is determined by the user's board design. 

a) 78°C/W when b) 125°C/W when c) 135°C/W when mounted on a mounted on a 0.5in[2] mounted on a 0.02 minimum mounting pad. pad of 2 oz copper in[2] pad of 2 oz copper 

Scale 1 : 1 on letter size paper 

**2.** Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0% 

**3.** The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied 

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Typical Characteristics<br>40 2.2<br>VGS = 4.5V 3.0V<br>2<br>30 2.5V 1.8 VGS = 2.0V<br>1.6<br>20 2.0V<br>1.4<br>2.5V<br>1.2 3.0V<br>10 4.0V<br>1 4.5V<br>0 0.8<br>0 0.5 1 1.5 2 0 10 20 30 40<br>VDS, DRAIN-SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A)<br>Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with<br>Drain Current and Gate Voltage.<br>1.6 0.038<br>ID = 9.4A<br>VGS = 4.5V ID = 4.7A<br>1.4<br>0.03<br>1.2<br>0.022<br>1 TA = 125 [o] C<br>0.014<br>0.8<br>TA = 25 [o] C<br>0.6 0.006<br>-50 -25 0 25 50 75 100 125 150 1 2 3 4 5<br>TJ, JUNCTION TEMPERATURE (oC) VGS, GATE TO SOURCE VOLTAGE (V)<br>Figure 3. On-Resistance Variation with Figure 4. On-Resistance Variation with<br>Temperature. Gate-to-Source Voltage.<br>40 100<br>VDS = 5V TA = -55 [o] C 12525 [o] C [o] C 10 VGS = 0V<br>30 TA = 125 [o] C<br>1<br>25 [o] C<br>20 0.1<br>-55 [o] C<br>0.01<br>10<br>0.001<br>0 0.0001<br>0.5 1 1.5 2 2.5 0 0.2 0.4 0.6 0.8 1 1.2<br>VGS, GATE TO SOURCE VOLTAGE (V) VSD, BODY DIODE FORWARD VOLTAGE (V)<br>FDS6898A<br>, NORMALIZED<br>, DRAIN CURRENT (A)ID RDS(ON)<br>DRAIN-SOURCE ON-RESISTANCE<br>, NORMALIZED<br>DS(ON) , ON-RESISTANCE (OHM)<br>R DS(ON)<br>R<br> DRAIN-SOURCE ON-RESISTANCE<br>, DRAIN CURRENT (A)ID<br>, REVERSE DRAIN CURRENT (A)IS<br>**----- End of picture text -----**<br>


## **Typical Characteristics** 

**Figure 5. Transfer Characteristics.** 

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Figure 6. Body Diode Forward Voltage Variation<br>with Source Current and Temperature.<br>**----- End of picture text -----**<br>


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## **Typical Characteristics** 

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10 2500<br>ID = 9.4A VDS = 5V 10V Vf = 1MHzGS = 0 V<br>8 2000 CISS<br>15V<br>6 1500<br>4 1000<br>COSS<br>2 500<br>CRSS<br>0 0<br>0 5 10 15 20 25 30 35 0 5 10 15 20<br>Qg, GATE CHARGE (nC) VDS, DRAIN TO SOURCE VOLTAGE (V)<br>Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics.<br>100 40<br>SINGLE PULSE<br>100µs RθJA =135°C/W<br>R DS(ON)  LIMIT 1ms TA = 25°C<br>10 30<br>10ms<br>100ms<br>1s<br>1 10s 20<br>DC<br>V GS  = 10V<br>SINGLE PULSE<br>0.1 RθJA = 135 [o] C/W 10<br>T A  = 25 [o] C<br>0.01 0<br>0.01 0.1 1 10 100 0.001 0.01 0.1 1 10 100<br>VDS, DRAIN-SOURCE VOLTAGE (V) t1, TIME (sec)<br>Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum<br>Power Dissipation.<br>1<br>D = 0.5<br>RθJA(t) = r(t) * RθJA<br>0.2 RθJA = 135 °C/W<br>0.1 0.1<br>0.05 P(pk)<br>0.02 t1<br>0.01 0.01 t 2<br>TJ - TA = P * RθJA(t)<br>SINGLE PULSE Duty Cycle, D = t1 / t2<br>0.001<br>0.0001 0.001 0.01 0.1 1 10 100 1000<br>Figure 11. Transient Thermal Response Curve.<br>Thermal characterization performed using the conditions described in Note 1c.<br>Transient thermal response will change depending on the circuit board design.<br>CAPACITANCE (pF)<br>, GATE-SOURCE VOLTAGE (V)<br>GS<br>V<br>, DRAIN CURRENT (A)ID<br>P(pk), PEAK TRANSIENT POWER (W)<br>r(t), NORMALIZED EFFECTIVE<br>TRANSIENT THERMAL RESISTANCE<br>**----- End of picture text -----**<br>


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ON Semiconductor and      are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 

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